JP3010333B2 - Film forming method and film forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming technique by a plasma CVD method. More specifically, the present invention relates to a film forming technique using a reaction of a plurality of source gases excited by plasma.

[0002]

2. Description of the Related Art Conventionally, as a practical film forming technique by a plasma CVD method, a film forming technique using a high frequency bipolar discharge type plasma generator using parallel plate electrodes is known as a typical one.

As shown in FIG. 5, a high frequency bipolar discharge type plasma generator using parallel plate electrodes has a pair of parallel plate electrodes 102 and 1 provided in a vacuum vessel 101.
03 is a ground potential, and the other is a high-frequency power supply 10
4, a high frequency is applied, and both parallel plate electrodes 10 are applied.
A raw material gas is supplied between the two parallel plate electrodes 1 and 2.
The source gas is excited by the plasma 105 formed between the layers 02 and 103 to deposit a film on the substrate 106.

[0004]

However, in the above-mentioned conventional film forming technique by the plasma CVD method, there are a source excitation field for exciting a source gas by plasma and a deposition field for depositing a film by the excited source gas. For the same reason, when a plurality of types of source gases are used, all the source gases must be excited and precipitated in a single plasma, and the following problems occur.

[0005] That is, since the stability of each source gas is different, when excitation is performed in a single plasma, preferential activation or decomposition of some source gases occurs, and the strictness of the obtained film composition is obtained. Control becomes difficult. In particular, when the flow rate of the source gas or the incident power of the high frequency is increased in order to obtain a high deposition rate, the composition shift, the mixing of impurities, the reduction in density, and the generation of excess powder become remarkable.

[0006] For example, when the formation of the SiO _x using SiH ₄ and _{O 2,} because the severe chemical reactivity of both resulting in generation of SiO _x powder into the pipe for supplying both raw material gases. Therefore, N ₂ O having low reactivity is generally used instead of O ₂ , but this causes N to be mixed into the SiO _x film.

As described above, in the conventional film forming technique using the plasma CVD method, particularly when a plurality of source gases are used, it is difficult to obtain a high film forming rate due to poor controllability of the film forming conditions, and the obtained film is difficult to obtain. There is a limit in controllability of composition fineness, crystal phase, and chemical composition that affect properties.

For this reason, for example, in order to control the microstructure of a ceramic material and to improve various functions or obtain new functions, composite materials on the order of nanometers have been studied. Can only be made.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and provides a high film forming rate and a high degree of composition fineness and high crystallinity of a film obtained by a plasma CVD method using a plurality of source gases. The purpose is to improve controllability of phases and chemical compositions.

[0010]

According to the first aspect of the present invention, as shown in FIG. 1, a plurality of source gases are respectively supplied to the vicinity of a substrate 3 set in a substrate holder 6 in a vacuum vessel 5. Form each other, set up towards the deposition site 4
Are separately excited using a plurality of plasma generators 1a, 1b,... Which generate different plasma electron densities , and each excited source gas is deposited in a deposition field 4 near the substrate 3.
To the substrate holder 3 in the deposition site 4 as well .
Generator provided with high frequency electrode 20 installed in
Is used to separately perform plasma excitation.

According to the invention of claim 6, FIG.
As shown in the figure, a plasma generated and pumped out of different source gases by different plasma excitation
Plasma generators 1a and 1 having different electron densities
b is provided toward the deposition field 4 near the substrate 3 set on the substrate holder 6 in the vacuum vessel 5, and a plasma generator for further plasma-exciting the plurality of source gases in the deposition field 4 is separately provided . High frequency power of the plasma generator
In this case , means for installing the pole 20 on the substrate holder 6 is taken.

[0012]

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, an embodiment of the invention of claim 6 will be described with reference to FIGS. 1 to 3, and the invention of claim 1 will be further described.

FIG. 1 shows an embodiment of a film forming apparatus according to the invention of claim 6 , wherein reference numeral 5 denotes a vacuum vessel to which an exhaust device 13 is connected.

In a vacuum vessel 5, a substrate 3 on which a film is to be formed is provided.
Is provided.

Preferably, the substrate holder 6 is provided with a heater 14 so that the temperature of the substrate 3 during film formation can be controlled. Reference numeral 15 denotes a temperature controller that controls heating by the heater 14.

In the vacuum vessel 5, two plasma generators 1a and 1b are provided respectively toward a deposition field 4 formed near the substrate 3.

The plasma generator 1a on the left side of the figure is a high-frequency bipolar discharge type plasma generator 1a similar to that shown in FIG. The plasma generator 1b on the right side of the figure is a high-frequency magnetron type plasma generator in which a magnet (permanent magnet or electromagnet) 16 for improving high-frequency efficiency is provided on the back side of the high-frequency electrode 11 of the plasma generator 1a. 1b.

The plasma generators 1a and 1b are supplied with high-frequency power from the high-frequency power supplies (usually with a matching device) 17 and 18 to the high-frequency electrodes 11 and 11, respectively, together with the supply of the raw material gas. Each source gas is excited and sent out by separate plasma formation.

The illustrated film forming apparatus includes two plasma generators 1a and 1b, but may include three or more plasma generators 1a, 1b,... Each of the plasma generators 1a, 1b ,.
Therefore, the electron density of the generated plasma is different .

The plasma generators 1a, 1b,... Are only required to be able to excite the respective source gases with separate plasmas having different electron densities and send them out. A plasma may be formed by wave or electron beam impact. What type of plasma generator 1a, 1b,... Is used may be selected according to the physical properties of the source gas and the film forming conditions. The number of plasma generators 1a, 1b,... May be selected according to the type of source gas used.

[0022] The raw material gas is decomposed in the activity easy to SiH ₄
If such or Si ₂ H _6, high when the excited in plasma having an electron density for film caused or Si-rich and Si powder is formed, used as the electron density is relatively low, the raw material gas is stable In the case of CH ₄ or the like which is difficult to decompose, a material having a high electron density is used .

As a device having a low electron density, a high frequency bipolar discharge type plasma generator 1a described with reference to FIG. 4 can be mentioned. As a device having a high electron density, a high frequency magnetron type plasma generation device shown on the right side of FIG. In addition to the device 1b,
High frequency electrodeless plasma generator 2a shown in FIG.
Generator 2 by microwave shown in FIG. 3 and FIG.
b.

The plasma generators 2a and 2b shown in FIGS. 2 and 3 are both conventionally known. The plasma generator 2a shown in FIG.
A coil 23 is wound around the coil 2 so that a high frequency can be supplied to the coil from a high frequency power supply 24. The plasma generator 2b shown in FIG. 3 is also a microwave-permeable insulating tube 2 made of quartz or the like.
5 can be supplied with microwaves.

On the other hand, the surface of the substrate holder 6 on the substrate 3 holding side is a high-frequency electrode 20 provided via an insulating layer 19, and a high-frequency power supply (usually with a matching device) 21 is connected thereto. Also forms another plasma generator. This another plasma generator accelerates electrons near the substrate 3 by a high-frequency electric field, and forms and maintains plasma by colliding and ionizing source gas molecules.

That is, the plasma generating apparatus constituted by the high-frequency electrode 20 and the high-frequency power supply 21 further excites the source gas in the deposition field 4 by plasma with a higher frequency .
Things.

Next, the operation of the above-described device will be described.

First, the exhaust device 13 is operated to make the inside of the vacuum device 5 to a required degree of vacuum.
are supplied to the high-frequency electrodes 11 of the plasma generators 1a, 1b,. In addition, high frequency power supply 2
1 to the high frequency electrode 20 of the substrate holder 6 as well.

As an example of the source gas combination, SiO _x
When forming a film of SiCl ₄ , SiH ₄ and / or Si ₂ H ₆ and O ₂ , and when forming a film of SiN _x ,
When forming a film of Cl ₄ , SiH ₄ and / or Si ₂ H ₆ and N ₂ and / or NH ₃ or SiC _x , SiCl ₄ ,
SiH ₄ and / or Si ₂ H ₆ and CH ₄ , C ₂ H ₆ , C
₂ H ₄ and / or _C 2 _H 2, in the case of forming a film of BN _x is _BCl 3, BF ₃ and / or _B 2 _{H 6} and N _2, and / or
Is the case where NH ₃ is used.

When SiN _x -SiC _x is formed, SiCl ₄ , SiH ₄ and / or Si ₂ H ₆ and N ₂ and / or NH ₃ for obtaining SiN _x are used.
SiCl ₄ , SiH ₄ and / or Si ₂ to obtain C _x
H ₆ and _{CH 4, C 2 H 6,} C 2 H 4 and / or C ₂ H ₂
In the case where the four types of source gases are used. In this case, four plasma generators 1a, 1b,.
First, SiN _x and SiC _x are obtained separately, and the obtained SiN _x and SiC _x are mixed in the precipitation field 4 to obtain SiN _x -S
iC _x will be formed.

By supplying a source gas and a high frequency to the plasma generators 1a, 1b,..., A plasma is formed in the plasma generators 1a, 1b,. Is sent out and mixed.

In the film forming apparatus shown in the figure, the raw material gas sent to the deposition site 4 is further supplied by a high-frequency power supply 21 to the high-frequency electrode 20 of the substrate holder 6 by using a plasma adjusted by supplying a high-frequency. Will be excited. Then, it reacts in the gas phase and on the surface of the substrate 3 to form a film on the substrate 3.

In particular, on the surface of the substrate 3, physical vapor deposition, chemical vapor deposition, formation of a bond of a substance to be formed, desorption of by-products, sputtering, surface heating, migration (surface movement), etc., occur in connection with each other. . These phenomena are caused not only by film forming conditions such as film forming pressure, type, composition and flow rate of source gas, apparatus configuration and substrate 3 temperature, but also by the excited state of source gas in the plasma generators 1a, 1b,. , Deposition field 4
And the film formation conditions such as the excited state of the substrate and the incident energy of ions to the substrate 3, and greatly affect the film formation rate and the quality of the film obtained.

In the present film forming apparatus, each of the source gases is separately excited by each of the plasma generators 1a, 1b,..., So that the excited state of each of the source gases can be adjusted separately. In addition, in the deposition field 4,
Are mixed separately from the plasma generators 1a, 1b,... By a plasma generator separate from the plasma generators 1a, 1b,. Since the excited source gas is excited, the excited state of the mixed source gas in the deposition field 4 can be independently adjusted.

That is, according to the present film forming apparatus, the plasma ion density in each of the plasma generators 1a, 1b,..., The plasma ion density in the deposition field 4, the bias of the substrate 3, and the like are independently adjusted and controlled. It is possible to obtain a high film formation rate and to control the composition fineness, crystal phase, and chemical composition of the obtained film. Therefore, it is possible to produce a composite material on the order of nanometers. Furthermore, by applying this film forming apparatus,
High quality functionally graded materials, diamond, C-BN, CN
It is also possible to form a metastable layer (non-parallel layer) such as.

By the way, as the plasma generators 1a, 1b,... Used in the present film forming apparatus, conventionally known plasma generators 2a, 2b shown in FIG. 2 or FIG. 3 can be used. However, such a plasma generator 2a,
In the case of 2b, the decomposed components are deposited on the inner surfaces of the tubular bodies 22 and 25, so that the matching state is deviated during operation, and in extreme cases, plasma cannot be formed. Further, as described above, since a high-density plasma is easily formed, when the source gas is active and easily decomposed, such as SiH ₄ or Si ₂ H ₆ , powder is easily generated, and the density of the obtained film is reduced. It is likely to cause deterioration of surface smoothness. In addition, since the tubes 22 and 25 made of brittle quartz or the like must be used, there is a possibility that the gas may leak due to the breakage.

In view of the above, it is preferable to use a plasma generator 1a as shown in FIG. 4 particularly for a raw material gas such as SiH ₄ or Si ₂ H ₆ which is active and easily decomposed.

The plasma generator 1a shown in FIG.
A metal container 9 having a source gas inlet 7 at the rear and an aperture 8 at the front and also serving as a ground electrode is provided. The raw material gas is supplied to the front surface side of the high-frequency electrode 11 by flowing around the high-frequency electrode 11 described later. The aperture 8 is an opening for sending out a source gas excited by plasma in the plasma generator 1a, and may be a single or a few sub-portions.

A high-frequency electrode 11 connected to a high-frequency power supply 10 is provided in the metal container 9.

The metal container 9 and the high-frequency electrode 11 have a high sputtering resistance and a high melting point metal that can withstand heat generation due to an increase in high-frequency input power so as to maintain the effective introduction of high frequency for a long period of time. It is preferable that it is manufactured. Specifically, for example, metals such as stainless steel, tungsten, molybdenum, and tantalum are preferable. It is also preferable to provide a cooling means for the metal container 9 and the high-frequency electrode 11.

In order to prevent impurities from being mixed into the film due to the sputtering of the metal container 9 and the high-frequency electrode 11,
It is also preferable to form the metal container 9 and the high-frequency electrode 11 using the material of the component of the film to be manufactured. For example, SiO
_{When the x} film is formed, it is preferable to form the metal container 9 and the high-frequency electrode 11 with Si.

An insulating jig 12 is interposed between the metal container 9 and the high-frequency electrode 11 to maintain the insulation between the two. As a material for the insulating jig, an insulating material such as alumina, boron nitride, aluminum nitride, or a marsible ceramic is used.

At least a part of the high-frequency electrode 11 faces the inner surface of the metal container 9 with a space in the metal container 9 interposed therebetween. That is, a high-frequency bipolar discharge type plasma generator 1a is constituted by the metal container 9 also serving as the ground electrode and the high-frequency electrode 11, and the high-frequency electrode 11 opposing the space of the metal container 9 therebetween. And the inner surface of the metal container 9 are preferably parallel to each other.

In the illustrated plasma generator 1a, the front surface of the high-frequency electrode 11 and the aperture 8 of the metal container 9 are formed.
Are formed in parallel, and the source gas supplied between the two is plasma-excited by high-frequency discharge between the two.

The high-frequency electrode 11 and the metal container 9
If conductive deposition occurs due to sputtering or decomposition of a source gas on the surface of the insulating jig 12 that insulates them, a short circuit between the high-frequency electrode 11 and the metal container 9 occurs. In the insulating jig 12 located,
It is preferable to form a groove 26 that is not easily vapor-deposited so that the high-frequency electrode 11 and the metal container 9 are not connected by vapor deposition.

In the case of the plasma generator 1a as described above, if a short circuit between the high-frequency electrode 11 and the metal container 9 does not occur, even if a certain amount of vapor deposition occurs, the consistency during operation does not deteriorate. Therefore, it is easy to obtain a stable operation state. In addition, since the plasma density is relatively low, even when the raw material gas is active and easily decomposed, such as SiH ₄ or Si ₂ H ₆ , it is difficult to generate powder, and there is no reduction in the density of the obtained film or deterioration in surface smoothness. . In addition, since a member such as brittle quartz is not required, leakage of the source gas due to damage is less likely to occur.

The plasma generator 1a shown in FIG. 4 is a magnet (permanent magnet or electromagnet) for improving high-frequency efficiency.
16 (see FIG. 1) on the back side of the high-frequency electrode 11,
It can also be used as a high frequency magnetron type plasma generator 1b (see FIG. 1). In this case, since the plasma density becomes relatively high, it is preferable to use it for stable excitation of the source gas.

Next, an embodiment of the invention of claim 1 and FIG.
An operation example of the plasma generator 1a will be described.

Example 1 A film forming test of a SiO _x film was performed using the film forming apparatus having the structure described with reference to FIG. 1, and the film forming speed and the film composition ratio (O / Si) were examined.

[0050] As the raw material gas using SiH ₄ and O _2, is using a high-frequency bipolar discharge type plasma generating apparatus shown in figure 1a to the excitation of SiH _4, in the figure the excitation of O ₂ 1
The high frequency magnetron type plasma generator shown by b was used.

The high frequency bipolar discharge type plasma generator is
With an outer diameter of 57 mm and an inner diameter of 47 mm, 1 /
A high-frequency electrode made of molybdenum having a diameter of 44 mm was attached via an insulating jig made of alumina to the inside of a stainless steel container to which an 8-inch pipe was connected at the rear.
Plasma was formed by connecting to a matching device of a 3.56 MHz high frequency power supply, and the raw material gas excited from an 8 mm diameter aperture on the front surface of the metal container was sent out. still,
The insulating jig on the front surface side of the high-frequency electrode was formed with a groove for preventing insulation failure due to deposition due to sputtering or decomposition of a source gas.

High frequency magnetron type plasma generator
Is a 35 mm diameter Si high-frequency electrode with a permanent magnet attached to the back of the high-frequency electrode to improve high-frequency efficiency. A 13.56 MHz high-frequency power supply matching device is connected to the high-frequency electrode to form plasma. To do.

The above two plasma generators are connected to an outside diameter of 40
A vacuum vessel having a height of 0 mm and a height of 400 mm was attached to a substrate holder inside the vacuum vessel.

A substrate made of Si is set on the substrate holder, and 13.5 is set on the high-frequency electrode provided on the substrate holder.
A high frequency of 6 MHz was applied.

Prior to film formation, the inside of the vacuum vessel was evacuated to 8 × 10 ⁻⁵ Torr using a composite turbo molecular pump. After that, 50cc by the mass flow controller
m of SiH ₄ gas and 200 ccm of O ₂ gas were introduced into the high frequency bipolar discharge type plasma generator and the high frequency magnetron type plasma generator, respectively, and the pressure in the vacuum vessel was reduced to 0 by adjusting the opening of the gate valve. .1 Torr
Was adjusted.

The high frequency bipolar discharge type plasma generator has 15
W, 180W for high frequency magnetron type plasma generator
Then, a high frequency of 50 W was applied to the substrate holder to form plasma, and a film was formed at room temperature.

After the film formation, the film thickness was measured by a step gauge to determine the film formation rate, and the ESCA analysis was performed.
The measurement of the Si ratio was performed. Table 1 shows the results.

Comparative Example 1 A SiO _x film was formed using a high frequency bipolar discharge type plasma generator using parallel plate electrodes shown in FIG.

A high-frequency electrode having a diameter of 160 mm and a ground electrode (substrate holder) are provided in a vacuum vessel so as to face each other, and 45 ccm of SiH ₄ and 300 ccm of N ₂ O are interposed therebetween.
, The pressure in the vacuum vessel was adjusted to 0.4 Torr, and a high frequency electrode of 13.56 MHz was supplied with 45 W
It was charged and a film was formed at room temperature.

The other test and measurement procedures and conditions were the same as in Example 1. Table 1 shows the results.

Comparative Example 2 A film was formed in the same manner as in Example 1 except that no high frequency was applied to the substrate holder, and the same measurement was performed.

Table 1 shows the results.

[0063]

[Table 1]

Operation Example The plasma generator described with reference to FIG. 4, that is, the first embodiment described above.
The stability in SiH ₄ plasma was examined using the high frequency bipolar discharge type plasma generator used in the above.

The above plasma generator has an outer diameter of 400 mm,
It was attached to a vacuum vessel having a height of 400 mm.

Prior to the test, the inside of the vacuum vessel was evacuated to 8 × 10 ⁻⁵ Torr using a composite turbo molecular pump. After that, 50cc by the mass flow controller
The SiH ₄ gas m was introduced into the plasma generating apparatus, by adjusting the degree of opening of the gate valve to adjust the pressure in the vacuum vessel to 0.4 Torr.

A matching device of a high-frequency power source was connected to the high-frequency electrode of the plasma generator, and a high frequency of 13.56 MHz was applied to form plasma. During the test for 3 hours,
The matching between the incident wave from the high-frequency power supply and the matching device was adjusted so that the power (incident wave-reflected wave) was always 15 W and the reflected wave power was minimized.

At the same time, the output of the power of the reflected wave is recorded on a recorder, and the relationship between the elapsed time and the amplitude of the power of the reflected wave is examined. After the test, the state of powder (Si) generation inside the plasma generator is examined. Was. Table 2 shows the results.

For comparison, a similar experiment was conducted for the plasma generators shown in FIGS.

With respect to the plasma generator of FIG. 2, a quartz tube having an outer diameter of 50 mm is connected to a vacuum device, and S
After introducing iH ₄ , an experiment was performed by introducing high frequency into a coil wound around a tube to form plasma. The plasma generator of FIG.
The microwave of z was injected into the quartz tube from the waveguide to form plasma, and the test was performed using a three-stub tuner and a plunger so that the power of the reflected wave was minimized. . Other test and measurement procedures and conditions are the same as those of the plasma generator of FIG.

The plasma generator shown in FIG.
As shown in the figure, the amplitude of the power of the reflected wave was small, and there was no change over time, and it was stable. No powder was observed in the inside of the plasma generator after 3 hours of the test.

On the other hand, in the plasma generator of FIG. 2 , the amplitude of the power of the reflected wave increased with the passage of time, and the plasma became unstable. After one hour, it was impossible to adjust the film forming pressure by adjusting the opening of the gate valve, and the test could not be continued. After the test, a large amount of powder was observed to adhere to the inside of the tube and the inside of the vacuum vessel, and it was found that this caused the exhaust speed of the exhaust pump to decrease and pressure control became impossible.

In the plasma generator of FIG. 3, the amplitude of the power of the reflected wave sharply increases with the passage of time.
After one hour, the formation of plasma could not be maintained. After the test, it was observed that powder adhered inside the tube.

[0074]

[Table 2]

[0075]

[Table 3]

[0076]

The present invention is as described above, and has the following effects.

(1) According to the first to sixth aspects of the present invention, the excited state of each raw material gas and the excited state of the mixed raw material gas can be controlled independently, so that high-speed film formation becomes possible, and The fineness, crystal phase and chemical composition of the composition of the obtained film can be controlled.

[0078]

[Brief description of the drawings]

FIG. 1 is a view showing one embodiment of a film forming apparatus according to the invention of claim 1;

FIG. 2 is a diagram illustrating an example of a plasma generator that can be used in the film forming apparatus of FIG.

FIG. 3 is a diagram showing another example of a plasma generator that can be used in the film forming apparatus of FIG.

FIG. 4 is a diagram showing an example of a plasma generator used in the present invention .

FIG. 5 is an explanatory view of a conventional film forming apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1a, 1b Plasma generator 2a, 2b Plasma generator 3 Substrate 4 Deposition site 5 Vacuum container 6 Substrate holder 7 Source gas inlet 8 Aperture 9 Metal container 10 High frequency power supply 11 High frequency electrode 12 Insulating jig 13 Exhaust device 14 Heater DESCRIPTION OF SYMBOLS 15 Temperature controller 16 Magnet 17 High frequency power supply 18 High frequency power supply 19 Insulating layer 20 High frequency electrode 21 High frequency power supply 22 Tube 23 Coil 24 High frequency power supply 25 Tube 26 Groove

──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Naoyuki Okamoto 3-5-1 Asahimachi, Machida-shi, Tokyo Electrochemical Industry Co., Ltd. Research Laboratory (56) References JP-A-59-148326 (JP, A) 63-222424 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 H01L 21/31

Claims (6)

(57) [Claims] 1. A plasma generated differently from a plurality of source gases, each of which is provided toward a deposition field near a substrate set on a substrate holder in a vacuum vessel.
Plasma excitation is performed separately using a plurality of plasma generators having different electron densities , and each excited source gas is sent to a deposition field near the substrate.
Generator with high-frequency electrodes installed in the heater
A film formation method, wherein plasma excitation is separately performed using the method. 2. A plasma generator comprising SiCl ₄ , S
Plasma excitation using iH ₄ and / or Si ₂ H ₆ as a source gas is performed, and N ₂ and / or NH _{3 is}
2. The film forming method according to claim 1, wherein a film is formed from SiN _x by performing plasma excitation using GaN as a source gas. 3. A single plasma generator, comprising SiCl ₄ , S
Plasma excitation is performed using iH ₄ and / or Si ₂ H ₆ as a source gas, and CH ₄ , C ₂ H ₆ , C <sub>2
2. A</sub> SiC _x film is formed by performing plasma excitation using H ₄ and / or C ₂ H ₂ as a source gas.
Film formation method. 4. A plasma generator comprising BCl ₃ and BF ₃
And / or performing plasma excitation using B ₂ H ₆ as a source gas, and performing plasma excitation using another plasma generator using N ₂ and / or NH ₃ as a source gas to form a BN _x film. 2. The film forming method according to claim 1, wherein: 5. A single plasma generator using SiCl ₄ , S
The plasma excitation using iH ₄ and / or Si ₂ H ₆ as a source gas and the plasma excitation using O ₂ as a source gas in another plasma generator to form a SiO _x film. Item 1. The film forming method according to Item 1. 6. A method for generating a plurality of source gases separately from each other by exciting the plasma and sending them out of different types.
A plurality of plasma generators having different electron densities are provided toward a deposition field near a substrate set in a substrate holder in a vacuum vessel, and a plasma generation device further excites the plurality of source gases in the deposition field. A separate device is provided , and the high-frequency electrode of the plasma
A film forming apparatus, wherein the film forming apparatus is installed in a container.