JP2997141B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JP2997141B2 JP2997141B2 JP4346230A JP34623092A JP2997141B2 JP 2997141 B2 JP2997141 B2 JP 2997141B2 JP 4346230 A JP4346230 A JP 4346230A JP 34623092 A JP34623092 A JP 34623092A JP 2997141 B2 JP2997141 B2 JP 2997141B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive film
- solar cell
- transparent conductive
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光エネルギーを電気エ
ネルギーに変換する太陽電池に関するものであり、特
に、透明基板の上方に半導体接合を有する半導体層を形
成し、透明基板側から光を入射する、いわゆる順方向タ
イプの太陽電池に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell for converting light energy into electric energy, and more particularly, to a solar cell having a semiconductor junction formed above a transparent substrate and receiving light from the transparent substrate side. The present invention relates to a so-called forward type solar cell.
【０００２】[0002]
【従来の技術】いわゆる順方向タイプの薄膜太陽電池を
大面積化する際の問題の一つとして、光入射側に設けら
れる透明導電膜による抵抗損失の増加が挙げられる。透
明導電膜は、透明導電酸化物（ＴＣＯ）から形成されて
おり、金属等に比べると比抵抗が大きく、大面積化する
につれて透明導電膜上に設けられる表面電極までの距離
が長くなり、透明導電膜による抵抗損失が増加する。こ
のような問題を解消するデバイス構造として、主電極の
バスバーに多数の枝電極を形成した集電極を透明導電膜
上に形成する構造、並びに集積型構造が提案されている
（例えば、太陽電池ハンドブック，電気学会編，１１２
〜１１３頁）。2. Description of the Related Art One of the problems in increasing the area of a so-called forward type thin film solar cell is an increase in resistance loss due to a transparent conductive film provided on the light incident side. The transparent conductive film is formed of a transparent conductive oxide (TCO), and has a higher specific resistance than a metal or the like. As the area increases, the distance to a surface electrode provided on the transparent conductive film increases, and the transparent conductive film becomes transparent. The resistance loss due to the conductive film increases. As a device structure for solving such a problem, a structure in which a collector electrode having a large number of branch electrodes formed on a bus bar of a main electrode is formed on a transparent conductive film, and an integrated structure have been proposed (for example, a solar cell handbook). , The Institute of Electrical Engineers of Japan, 112
１１３113).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、集積型
構造は複数の薄膜層を別々に加工する必要があり、製造
工程における工程数が増えるという欠点がある。一方、
透明導電膜上に集電極を設ける構造は、透明導電膜上に
設けた集電極の上に半導体層を形成する必要があり、集
電極を設けることによって形成される段差部分におい
て、半導体層による被覆が不十分になり、この部分で集
電極と裏面電極とが短絡するおそれがある。このため、
順方向タイプの太陽電池において、透明導電膜上に集電
極を形成する構造が提案されているものの、現実には採
用されていなかった。However, the integrated structure has a disadvantage that a plurality of thin film layers must be separately processed, and the number of steps in the manufacturing process is increased. on the other hand,
In the structure in which the collecting electrode is provided on the transparent conductive film, it is necessary to form a semiconductor layer on the collecting electrode provided on the transparent conductive film, and the step formed by providing the collecting electrode is covered with the semiconductor layer. And the collector electrode and the back electrode may be short-circuited at this portion. For this reason,
In a forward type solar cell, a structure in which a collector electrode is formed on a transparent conductive film has been proposed, but has not been actually adopted.
【０００４】本発明の目的は、順方向タイプの太陽電池
において、透明導電膜上に集電極を設ける構造を可能に
し、透明導電膜による抵抗損失を低減することのできる
太陽電池を提供することにある。[0004] It is an object of the present invention to provide a solar cell of a forward type, in which a collector electrode can be provided on a transparent conductive film and the resistance loss due to the transparent conductive film can be reduced. is there.
【０００５】[0005]
【課題を解決するための手段】本発明の太陽電池は、透
明基板と、透明基板上に形成される透明導電膜と、透明
導電膜上の所定箇所に形成される集電極と、透明導電膜
及び集電極上に形成される半導体接合を有する半導体層
と、半導体層上に形成される裏面電極を備え、集電極上
方の裏面電極の領域部分が、酸化または窒化されること
により裏面電極の他の領域部分に対して電気的に分離さ
れていることを特徴としている。The solar cell according to the present invention comprises a transparent substrate, a transparent conductive film formed on the transparent substrate, a collector electrode formed at a predetermined position on the transparent conductive film, and a transparent conductive film. A semiconductor layer having a semiconductor junction formed on the collector electrode, and a back electrode formed on the semiconductor layer, wherein a region of the back electrode above the collector electrode is oxidized or nitrided.
Is electrically isolated from other regions of the back electrode.
【０００６】[0006]
【０００７】本発明において、集電極上方の裏面電極の
領域部分の酸化または窒化は、対象部分のまわりをレジ
スト膜でパターニングした後、酸化または窒化雰囲気中
で裏面電極を加熱する方法などによって行うことができ
る。また、酸化は、レーザー照射によって部分的に加熱
し、熱酸化する方法によっても行うことができる。[0007] In the present invention, the back electrode above the collector electrode
Oxidation or nitridation of the region can be performed by, for example, a method of heating the back electrode in an oxidizing or nitriding atmosphere after patterning the periphery of the target portion with a resist film. The oxidation can also be performed by a method of partially heating by laser irradiation and performing thermal oxidation.
【０００８】また、本発明における半導体接合には、ｐ
層とｎ層を直接接合する構造のみならず、ｐ層とｎ層の
間にｉ層を介在させる構造も含まれ、さらにはｐ層とｉ
層のみの接合やｎ層とｉ層のみの接合等も含まれる。Further, the semiconductor junction in the present invention has p
In addition to a structure in which the p-layer and the n-layer are directly joined, a structure in which an i-layer is interposed between the p-layer and the n-layer is also included.
This includes bonding of only layers, bonding of only n layers and i layers, and the like.
【０００９】[0009]
【作用】本発明に従えば、集電極上方の裏面電極の領域
部分が、裏面電極の他の領域部分に対して電気的に分離
される。このため、集電極と集電極上方の裏面電極の領
域部分との短絡を防止することができる。According to the present invention, the region of the back electrode above the collector electrode is electrically separated from other regions of the back electrode. Therefore, it is possible to prevent a short circuit between the collector electrode and the region of the back electrode above the collector electrode.
【００１０】[0010]
【実施例】図１は、本発明に従う太陽電池の一実施例を
製造する工程を示す断面図である。図１（ａ）を参照し
て、ガラス基板１上に形成した透明導電膜２の上の所定
部分に、Ａｇ蒸着により集電極３を形成する。次に、図
１（ｂ）に示すように、透明導電膜２及び集電極３の上
に非晶質シリコン層４を形成する。この実施例において
非晶質シリコン層４は、ｐ型、ｉ型及びｎ型の非晶質シ
リコン層を順次積層して形成したｐｉｎ構造の非晶質シ
リコン層である。ここで、集電極３の膜厚は３μｍであ
り、非晶質シリコン層４の膜厚は５０００Åである。FIG. 1 is a sectional view showing the steps of manufacturing an embodiment of a solar cell according to the present invention. Referring to FIG. 1A, a collector electrode 3 is formed on a predetermined portion of a transparent conductive film 2 formed on a glass substrate 1 by Ag vapor deposition. Next, as shown in FIG. 1B, an amorphous silicon layer 4 is formed on the transparent conductive film 2 and the collector 3. In this embodiment, the amorphous silicon layer 4 is a pin-structured amorphous silicon layer formed by sequentially stacking p-type, i-type and n-type amorphous silicon layers. Here, the thickness of the collector electrode 3 is 3 μm, and the thickness of the amorphous silicon layer 4 is 5000 °.
【００１１】次に、図１（ｃ）を参照して、非晶質シリ
コン層４の上に裏面電極５を形成する。裏面電極５は、
Ａｌ蒸着により形成することができる。集電極３の厚み
が１０００Å以上になると、非晶質シリコン層４の段差
部分４ａにおける集電極３の被覆が不十分となり、集電
極３と裏面電極５の段差部分５ａとの間で短絡を生じや
すくなる。この実施例では、集電極３上方の裏面電極５
の領域部分を他の領域部分から電気的に分離するため、
裏面電極５の段差部分５ａの部分をレーザー照射により
選択的に除去している。Next, referring to FIG. 1C, a back electrode 5 is formed on the amorphous silicon layer 4. The back electrode 5
It can be formed by Al deposition. When the thickness of the collecting electrode 3 is 1000 ° or more, the covering of the collecting electrode 3 on the step portion 4a of the amorphous silicon layer 4 becomes insufficient, and a short circuit occurs between the collecting electrode 3 and the step portion 5a of the back electrode 5. It will be easier. In this embodiment, the back electrode 5 above the collector 3
To electrically isolate the area part from other area parts,
The step portion 5a of the back electrode 5 is selectively removed by laser irradiation.
【００１２】図１（ｄ）は、この状態を示す断面図であ
り、この実施例では裏面電極５のみならず非晶質シリコ
ン層４の段差部分をも除去しており、除去部７が形成さ
れている。このようにして形成された太陽電池は、いわ
ゆる順方向タイプの太陽電池であり、光６は、ガラス基
板１及び透明導電膜２を通り、非晶質シリコン層４に入
射する。FIG. 1D is a cross-sectional view showing this state. In this embodiment, not only the back electrode 5 but also the step portion of the amorphous silicon layer 4 has been removed, and the removed portion 7 is formed. Have been. The solar cell thus formed is a so-called forward type solar cell. Light 6 passes through the glass substrate 1 and the transparent conductive film 2 and enters the amorphous silicon layer 4.
【００１３】図２は、この実施例の太陽電池を裏面電極
５側から見た平面図である。図２に示されるように、集
電極３は、バスバー３ａと、バスバー３ａから垂直方向
に延びる枝電極３ｂから形成されており、このような集
電極３の上方部分の裏面電極と他の領域の裏面電極５と
が除去部７によって電気的に分離されている。この結
果、集電極３上の非晶質シリコン層４の部分が発電に寄
与できなくなるが、もともと集電極３上の非晶質シリコ
ン層４は、集電極３によって遮蔽されており光が入射し
にくい部分であるので、非晶質シリコン層４の有効面積
には殆ど影響を与えない。FIG. 2 is a plan view of the solar cell of this embodiment viewed from the back electrode 5 side. As shown in FIG. 2, the collector electrode 3 is formed by a bus bar 3a and a branch electrode 3b extending vertically from the bus bar 3a. The back electrode 5 is electrically separated from the back electrode 5 by the removal unit 7. As a result, the portion of the amorphous silicon layer 4 on the collecting electrode 3 cannot contribute to power generation, but the amorphous silicon layer 4 on the collecting electrode 3 is originally shielded by the collecting electrode 3 so that light is incident. Since it is a difficult part, the effective area of the amorphous silicon layer 4 is hardly affected.
【００１４】図３は、本発明に従う他の実施例を示す断
面図である。図３に示す太陽電池では、集電極３上の裏
面電極５の領域部分を酸化することにより、他の領域部
分と電気的に分離している。このような酸化は、図１
（ｃ）に示す状態において、裏面電極５の酸化させない
部分上に、図３に示すようなレジスト膜８を形成し、レ
ジスト膜８形成後、酸化雰囲気中で裏面電極５を加熱す
ることにより熱酸化させることができる。このような酸
化により集電極３上方の裏面電極５の部分が酸化されて
酸化アルミニウムとなり絶縁部となるので、集電極３上
方の裏面電極５の部分を他の領域部分から電気的に絶縁
することができる。FIG. 3 is a sectional view showing another embodiment according to the present invention. In the solar cell shown in FIG. 3, the region of the back electrode 5 on the collector electrode 3 is oxidized to be electrically separated from other regions. Such oxidation is shown in FIG.
In the state shown in FIG. 3C, a resist film 8 as shown in FIG. Can be oxidized. Such oxidation oxidizes the portion of the back electrode 5 above the collecting electrode 3 to become aluminum oxide and becomes an insulating portion. Therefore, the portion of the back electrode 5 above the collecting electrode 3 is electrically insulated from other regions. Can be.
【００１５】この実施例においては、集電極３上方の裏
面電極５の全体を酸化しているが、酸化する部分は、裏
面電極５の段差部分のみでもよい。また本実施例では集
電極３の上方の裏面電極５の部分を酸化しているが、酸
化に代えて窒化させてもよい。窒化は窒化雰囲気中で裏
面電極５を加熱することにより行うことができる。In this embodiment, the entire back electrode 5 above the collector electrode 3 is oxidized. However, the oxidized portion may be only the step portion of the back electrode 5. Further, in this embodiment, the portion of the back electrode 5 above the collector electrode 3 is oxidized, but may be nitrided instead of oxidation. The nitriding can be performed by heating the back electrode 5 in a nitriding atmosphere.
【００１６】なお、上記実施例では、非晶質シリコン層
としてｐｉｎ構造のものを示したが、ｐｎ構造は当然の
ことながら、ｐｉ構造、またはｉｎ構造のものであって
もよい。In the above embodiment, the amorphous silicon layer has a pin structure, but the pn structure may be a pi structure or an in structure.
【００１７】[0017]
【発明の効果】本発明に従えば、集電極上方の裏面電極
の領域部分を、他の領域部分に対して電気的に分離して
いる。このため、集電極の段差部分上方に形成された半
導体層の被覆が不十分であっても、集電極と裏面電極と
の間で短絡が生じることはない。このため、本発明に従
えば、いわゆる順方向タイプの太陽電池において透明導
電膜上に集電極を形成する構造が可能となり、透明導電
膜による抵抗損失を低減することができる。According to the present invention, the region of the back electrode above the collector electrode is electrically separated from other regions. For this reason, even if the semiconductor layer formed above the step portion of the collector electrode is insufficiently covered, no short circuit occurs between the collector electrode and the back surface electrode. For this reason, according to the present invention, a structure in which a collector electrode is formed on a transparent conductive film in a so-called forward type solar cell can be achieved, and resistance loss due to the transparent conductive film can be reduced.
【図１】本発明に従う一実施例の太陽電池の製造工程を
示す図であり、（ａ）は集電極を形成した状態を示して
おり、（ｂ）は集電極及び透明導電膜上に非晶質シリコ
ン層を形成した状態を示しており、（ｃ）は非晶質シリ
コン層上に裏面電極を形成した状態を示しており、
（ｄ）は集電極の段差部分上方の裏面電極及び非晶質シ
リコン層の部分を除去した状態を示している。1A and 1B are diagrams showing a manufacturing process of a solar cell according to an embodiment of the present invention, wherein FIG. 1A shows a state in which a collecting electrode is formed, and FIG. (C) shows a state where a back electrode is formed on the amorphous silicon layer,
(D) shows a state in which the back electrode and the amorphous silicon layer above the step portion of the collector are removed.
【図２】図１（ｄ）に示す実施例を裏面電極側から見た
平面図。FIG. 2 is a plan view of the embodiment shown in FIG.
【図３】本発明に従う他の実施例を示す断面図。FIG. 3 is a sectional view showing another embodiment according to the present invention.
１…ガラス基板 ２…透明導電膜 ３…集電極 ４…非晶質シリコン層 ４ａ…非晶質シリコン層の段差部分 ５…裏面電極 ５ａ…裏面電極の段差部分 ６…光 ７…除去部 ８…レジスト膜 ９…酸化された裏面電極部分 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Transparent conductive film 3 ... Collector electrode 4 ... Amorphous silicon layer 4a ... Step part of an amorphous silicon layer 5 ... Backside electrode 5a ... Step part of a backside electrode 6 ... Light 7 ... Removal part 8 ... Resist film 9: Oxidized back electrode
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 H01L 21/768 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 31/04 H01L 21/768
Claims (1)
有する半導体層と、 前記半導体層上に形成される裏面電極とを備え、 前記集電極上方の裏面電極の領域部分が酸化または窒化
されることにより裏面電極の他の領域部分に対して電気
的に分離されていることを特徴とする太陽電池。1. A transparent substrate, a transparent conductive film formed on the transparent substrate, a collector electrode formed at a predetermined position on the transparent conductive film, and a collector electrode formed on the transparent conductive film and the collector electrode A semiconductor layer having a semiconductor junction; and a back electrode formed on the semiconductor layer, wherein a region of the back electrode above the collector electrode is oxidized or nitrided.
A solar cell characterized in that the solar cell is electrically isolated from other regions of the back electrode by being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4346230A JP2997141B2 (en) | 1992-12-25 | 1992-12-25 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4346230A JP2997141B2 (en) | 1992-12-25 | 1992-12-25 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06196735A JPH06196735A (en) | 1994-07-15 |
| JP2997141B2 true JP2997141B2 (en) | 2000-01-11 |
Family
ID=18381997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4346230A Expired - Fee Related JP2997141B2 (en) | 1992-12-25 | 1992-12-25 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2997141B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7314773B2 (en) * | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
-
1992
- 1992-12-25 JP JP4346230A patent/JP2997141B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06196735A (en) | 1994-07-15 |
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