JP2973141B2 - Vacuum apparatus and control method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum apparatus used for processing semiconductor substrates and liquid crystal substrates.

[0002]

2. Description of the Related Art A typical vacuum apparatus for performing various processes such as ion implantation into substrates, dry etching, and film forming processes required for manufacturing semiconductor devices and liquid crystal panels is shown in FIG. ), The process chamber (P
(C) a single processing chamber, or (B)
As shown in the figure, the load lock chamber (L
L), two preparatory chambers (LL1 and LL2) are arranged for loading the substrate to be processed and for unloading the processed substrate, or cassette chains before and after the processing chamber as shown in (C). (CC1, CC)
2) is arranged for carrying in a substrate to be processed and for carrying out a processed substrate, or as shown in (D), a storage room (LL, LL2) arranged before and after a processing room, and a storage room (LL). CC1, CC2). An automatic opening / closing mechanism called a gate valve (G) is formed between the chambers (vacuum chambers) and between the outermost chamber and the atmospheric pressure, and cooperates with a transfer mechanism for the substrate to be processed, an exhaust mechanism, etc., not shown. Automatic opening and closing is performed. When the vacuum chamber is shared for loading and unloading substrates, (B), (C),
In (D), a spare room and a storage room for loading / unloading are installed only on one side of the processing chamber.

[0003] A supplementary description of the vacuum apparatus of the form shown in FIG.
As shown in FIG. 9, a mounting table 51 for mounting a semiconductor wafer to be processed is installed in a central processing chamber (PC).
A cassette 53 for accommodating a plurality of semiconductor wafers (W) to be processed is arranged in the storage room (CC1) on the loading side, and a cassette 53 is placed in the spare room (LL1) on the loading side arranged between them. A transfer mechanism (transfer robot) 52 such as an articulated arm that transfers the semiconductor wafer (W) to be processed to the mounting table 51 in the processing chamber is installed. Similarly, the cassette 53 'for accommodating a plurality of processed semiconductor wafers (W) is disposed in the storage chamber (CC2) on the unloading side, and the intermediate route between them is arranged in the unloading side storage chamber (CC2). A transfer mechanism 52 'for transferring the processed semiconductor wafer from the mounting table 51 in the processing chamber into the cassette 53' is installed in the unloading side preliminary chamber (LL2) arranged in the processing chamber. Each chamber is evacuated by an exhaust mechanism 55, 56, 56 ', 57, 57'.

The configuration shown in FIG. 8A is the most compact and simple because only one chamber is required. However, since the inside of the processing chamber (PC) must be returned to the atmospheric pressure every time a substrate to be processed is loaded or unloaded, the configuration shown in FIG. It takes time to evacuate to a high vacuum state, and there is a problem that the processing efficiency called throughput decreases. In the embodiment of FIG. 8B, although three chambers are required, it is not necessary to return the inside of the processing chamber to the atmospheric pressure every time a substrate to be processed is taken in and out, and the loading side on the loading side is performed in parallel with the processing in the processing chamber. Since the next substrate to be processed can be loaded into the preparatory chamber (LL1) and the processed substrate can be unloaded from the preparatory chamber (LL2) on the unloading side, the processing efficiency is improved.
In the form of FIG. 8C, the storage chambers (CC1, CC2) need only be returned to the atmospheric pressure once for a plurality of substrates to be processed or processed, so that the number of exhausts is reduced, and the throughput is further increased. improves. Further, in the embodiment of FIG. 8D, the transfer of the substrate to be processed between the preparatory chambers (LL1, LL2) and the processing chamber (PC) and the processing in the processing chamber are performed in parallel with the storage chambers (CC1, CC1).
Since the cassette can be loaded / unloaded to / from the CC2), the throughput is further improved and the spare chambers (LL1, L2)
L2) can always be kept in a clean vacuum state.

[0005]

In the conventional vacuum apparatus shown in FIG. 8, the inside of the chamber must be returned to the atmospheric pressure at a constant frequency as the processing proceeds with respect to the outermost apparatus, so that the inside of the chamber is re-exposed. There is a problem that it takes time to evacuate to a high vacuum state and the throughput is reduced. In particular, if the moisture contained in the outside air adheres to the inner wall of the chamber,
There is a problem that the heat of vaporization at the time of exhaust changes into ice pieces that are difficult to be exhausted, and it takes time to exhaust and the throughput is reduced. In order to prevent this, measures have been taken to fill the chamber with an inert gas such as nitrogen prior to opening to the atmospheric pressure, and to blow it to the outside during loading / unloading of the substrate to be processed. It is difficult to sufficiently prevent water molecules flying in the atmosphere at a high molecular velocity, and there is a problem that it is not very effective.

In the case where the processing in the processing chamber is a film forming processing such as CVD, a small amount of material gas used in the processing or a reaction gas generated therefrom remains in the processing chamber, and this residual gas is deposited on the substrate to be processed. When loading or unloading processed substrates, they flow into the spare room or storage room and adhere to their inner walls, etc.
There is also a problem that the interior of the room may be contaminated and defective products may be generated.

Further, various molecules such as water molecules are adsorbed on the surface of the substrate to be processed waiting to be carried in while being in contact with the atmosphere. Even if such a substrate to be processed is loaded into the chamber and evacuation is started, the adsorbed molecules on the surface are not released quickly, so that it takes a long time to reach a high vacuum state, and there is a problem that the throughput is reduced.

[0008]

According to the vacuum apparatus of the present invention, the vacuum chamber is provided from a time immediately before the door of the vacuum chamber is opened to a time after a lapse of a predetermined time after the door is closed again and the evacuation is started. Transfer means for the substrate to be processed built in the chamber ,
Heating means for heating at least one of the storage means and the mounting table is provided. According to one embodiment of the present invention, prior to
At least one of transport means, storage means, and mounting table
There has been configured to receive the heating by heat rays emitted through a window in the translucent formed on the wall surface of the vacuum chamber. According to another embodiment of the present invention, an outer vacuum chamber surrounded by a thick wall, an inner vacuum chamber surrounded by a thin wall, and wall heating means for heating the thin wall of the inner vacuum chamber are provided. The wall heating means is provided with the transport means and the storage means.
The heating operation is performed in synchronization with heating means for at least one of the step and the mounting table .
Further, in the method for controlling a vacuum device according to the present invention, the door of the vacuum chamber is closed.
The first step of chaining and the state where the door of the vacuum chamber is closed
Open the exhaust to bring the vacuum chamber into a vacuum state at a predetermined pressure.
Starting the second step, and evacuating the vacuum chamber to the predetermined pressure.
While maintaining the empty state, for the substrate to be processed in the vacuum chamber
At least one of the transporting means, the storing means, and the mounting table
A third step of initiating heating for
When the temperature of the transfer means reaches a predetermined temperature, the discharge is performed.
A fourth step of shutting down, and
Increase the pressure in the vacant room until it is almost equal to the pressure of the outside air
The fifth step, wherein the pressure in the vacuum chamber is substantially equal to the pressure of the outside air.
A sixth step of opening the door after being equalized,
The pressure in the vacuum chamber is substantially equal to the pressure of the outside air, and
Into the vacuum chamber of the substrate to be processed in a state where
Seventh step of loading or unloading from the vacuum chamber
Closing the door after loading or unloading the substrate to be processed
An eighth step of performing the vacuum with the door closed.
Start evacuation to make the room a vacuum at a specified pressure
A ninth step, and after a lapse of a predetermined time from when the door is closed
And a tenth step of terminating the heating.

[0009]

FIG. 1 is a sectional view showing a main part of a vacuum apparatus according to one embodiment of the present invention, in which only main parts are shown in a sectional view.
Reference numeral 12 denotes a spare chamber for loading a substrate to be processed, 40 denotes a transport mechanism,
3 is an infrared lamp, 14 is a reflecting mirror, 5a and 6a are exhaust pipes, 5b and 6b, exhaust valves for opening and closing the exhaust pipe, 7 is a dry pump, 8 is a turbo molecular pump, and 9 and 1
0 is a gate valve and 11 is a control unit.

The preliminary chamber 12 is surrounded by a thick wall made of stainless steel, an aluminum alloy or the like.
It has a large strength capable of withstanding a high pressure difference of approximately 1 atm, which is equal to the difference between the atmospheric pressure acting on the outer wall surface and the high vacuum of approximately zero pressure acting on the inner wall surface. A translucent window 12a made of quartz or the like is fitted into an upper wall surface of the vacuum chamber 12, and a heating mechanism including an infrared lamp 13 and a reflecting mirror 14 is provided above the window.

[0011] inside of the preliminary chamber 12 is connected to the dry pump 7 via an exhaust valve 5b and the exhaust pipe 6a with maintained airtight by its walls and the gate valve 9, 10 ^{over 2} Torr After the degree of the exhaust gas to the low vacuum condition is performed, the exhaust to a high vacuum state of the connected about 10 ^{@ 9} Torr turbo molecular pump 8 is performed via the gate valve 6b. The exhaust side of the turbo molecular pump 8 is connected to the dry pump 7.

The control unit 11 includes an opening / closing / transport control unit 11 for controlling opening / closing of the gate valves 9 and 10 and loading of the substrate to be processed.
and an exhaust control unit 11c for controlling an exhaust operation by starting / stopping an exhaust pump and opening and closing an exhaust valve in an exhaust pipe.
A temperature controller 11d for controlling the temperature of the transfer mechanism 40 in the vacuum chamber and the temperature of the substrate W held on the top 41 thereof by controlling the power supply to the infrared lamp 13; And a central control unit 11a to be linked.

FIG. 2 shows the gate valve 9 which is controlled by the control unit 11 when the substrate to be processed is loaded when the outside of the gate valve 9 in the preliminary chamber of FIG.
FIG. 4 is a conceptual diagram showing an example of how the open / closed state, the pressure in the preliminary chamber 12, and the temperature of the top 41 of the transport mechanism 40 change with time. First, in the initial state, the exhaust valve 6b exhaust valve 5b is closed with a gate valve 9 and 10 is closed is opened, the preliminary chamber 12 is maintained at a high vacuum state on the order of 10 ^{@ 9} Torr . In the example of FIG. 2, the gate valve 10 is kept in a normally closed state.

At time t0 prior to opening of the gate valve 9 for carrying in the substrate to be processed or carrying out the processed substrate, power supply to the infrared lamp 13 is started, and
The temperature of the top 41 of the transport mechanism in
It is rapidly increased to a high temperature of about 0 ^° C. Thereafter, at time t1, the exhaust valves 5b and 6b are closed, whereby the inner and outer spare chambers 2 are separated from the exhaust system. Subsequently, nitrogen gas is introduced into the spare chamber 2 by opening a leak valve (not shown). Introduced and returned to atmospheric pressure. After this,
At time t2, the gate valve 9 is opened, and the top 41 of the transfer mechanism 40 kept at a high temperature is protruded out of the preliminary chamber 12, and the substrate to be processed is placed on the top 41 and loaded into the preliminary chamber 12. Is performed. When the transfer of the substrate is completed, at time t3, the gate valve 9 is closed, the exhaust valve 5b is opened, and the exhaust by the rotary pump 7 is started. When the initial evacuation by the rotary pump 7 is completed, the evacuation valve 5b is closed, the evacuation valve 6b is opened, and evacuation by the turbo molecular pump 8 is started. At time t4 when the exhaust in the preliminary chamber 12 has slightly advanced, the power supply to the infrared lamp 13 is stopped.

As described above, since the temperature of the transport mechanism in the preliminary chamber is previously raised by the irradiation of the infrared ray started before the gate valve 9 is opened, even if the transfer mechanism is exposed to the atmosphere with the opening of the gate valve 9. Adhesion of moisture to the transport mechanism is effectively prevented. In addition, since the temperature of the substrate to be carried in becomes high due to the irradiation of infrared rays, evaporation of moisture or the like adsorbed on the surface is promoted, and the exhaust characteristics thereafter are improved, and the throughput is greatly improved.

FIG. 3 is a sectional view of a main part of a vacuum apparatus according to another embodiment of the present invention, in which only a main part is shown in a sectional view, wherein 1 is an outer vacuum chamber, 2 is an inner vacuum chamber, and 3 is an inner vacuum chamber. Is a heating wire, 4 is a cooling water pipe, 5a and 6a are exhaust pipes, 5b and 6
Reference numerals b and 6c denote exhaust valves for opening and closing an exhaust pipe, 7 denotes a dry pump, 8 denotes a turbo molecular pump, 9 and 10 denote gate valves, 11 denotes a control unit, and 20 denotes a mounting table. The vacuum apparatus of this embodiment exemplifies a processing chamber (process chamber) in which the mounting table 20 is accommodated.

Outer vacuum chamber 1 constituting a double-structured vacuum chamber
Is surrounded by a thick wall made of stainless steel, aluminum alloy, etc., and has a pressure of approximately 1 atm, which is equal to the difference between the atmospheric pressure acting on the outer wall and the hundreds of thousands of atmospheric pressure acting on the inner wall. It has great strength to withstand high pressure differences.
On the other hand, the inner vacuum chamber 2 is surrounded by a thin wall made of stainless steel or the like, and is equal to a difference between hundreds of thousands of atmospheric pressure acting on the outer wall surface and almost zero atmospheric pressure acting on the inner wall surface. It has a small strength that can withstand a low pressure of about hundreds of thousands of atmospheres. Outside the thin wall surface of the inner vacuum chamber 2, a heater 3 and a cooling water pipe 4 are wound at appropriate intervals.

The inside of the outer vacuum chamber 1 is kept airtight by the wall surface thereof and the wall surface of the inner vacuum chamber 2, and is connected to a dry pump 7 through an exhaust pipe 5a and an exhaust valve 5b. exhaust is performed until a vacuum state of about 10 parts per million atmospheres ^(10-2 2 Torr). On the other hand, the inside of the inner vacuum chamber 2 is kept in an airtight state by the wall surface and the gate valves 9 and 10, and at the initial stage of the exhaust, the exhaust pipe 6 is provided.
a and the dry pump 5b through the exhaust valves 6c and 5b.
After being connected to, and eventually are connected to a turbo molecular pump 8 via an exhaust valve 6b, the exhaust is carried out to a high vacuum of about 10 ^{@ 9} Torr. The exhaust side of the turbo molecular pump 8 is connected to the dry pump 7.

The control unit 11 includes an opening / closing / transportation control unit 11b for controlling the opening / closing of the gate valves 9, 10 and the loading / unloading of the substrate to be processed / unloading the processed substrate. An exhaust control unit 11c that controls an exhaust operation by opening and closing a valve, and a temperature of a wall surface of the inner vacuum chamber by supplying power to the heating wire 3 and the cooling water pipe 4 wound on the outer wall surface of the inner vacuum chamber 2 and controlling water supply. Temperature control unit 11 for controlling temperature
and a central control unit 11a that links the above-described units at a predetermined timing.

As shown in the exploded partial perspective view of FIG. 4, the mounting table 20 is composed of a circular plate 21 with a cooling mechanism and a circular plate 22 with a heating mechanism laminated on the circular plate 21. The circular plate 21 with a cooling mechanism is composed of upper and lower plates 21a and 21b stacked in close contact with each other, a cooling water passage 21c formed between the upper and lower plates, a water supply port 21d connected to the cooling water passage, and a drainage port. 21e. The circular plate 22 includes an insulating ceramic jacket 22a and a conductive ceramic electric heating element 22b embedded inside the jacket.

The temperature control unit 11d in the control unit 11
In the embodiment, the same temperature control as that performed on the transfer mechanism 40 in the preliminary chamber 12 at the timing shown in FIG. 2 is performed on the wall surface of the inner vacuum chamber 2 and the mounting table 20 in FIG. That is, at time to before the gate valves 9 and 10 for loading and unloading the substrates are opened, the heating wire 3 and the conductive ceramic heating element 22b are energized, and the wall surface of the inner vacuum chamber 2 and the mounting table 20 are started. From the value near room temperature to 1
It can be raised rapidly to about 40 ^° C. Thereafter, at time t1
, The inner and outer vacuum chambers 1 and 2 are disconnected from the exhaust system by closing the exhaust valves 5b and 6b, and then the inner portions of the outer vacuum chamber 1 and the inner vacuum chamber 2 are opened by opening a leak valve (not shown). At the same time it is returned to atmospheric pressure. Thereafter, the gate valves 9 and 10 are opened, and the inner vacuum chamber 2 is opened.
The substrate to be processed is loaded into the chamber and the processed substrate is unloaded therefrom. When the loading and unloading of the substrate is completed, the gate valves 9 and 10 are closed, and after a predetermined time, the heating wire 3
And the power supply to the electric heating element 22b is stopped and the cooling water pipe 4
Then, the supply of the cooling water to the cooling water supply port 21d is started, so that the temperatures of the wall surface of the vacuum chamber 2 and the mounting table 20 are rapidly reduced.

As described above, since the temperature in the inner vacuum chamber is previously raised by heating the wall surface started before the gate valve 9 is opened, the interior of the vacuum chamber is exposed to the atmosphere with the opening of the gate valve 9. Also, the adhesion of moisture to the mounting table and the wall surface is effectively prevented. Further, since the heat capacity of the wall surface is reduced by forming the inner vacuum chamber 2 with a thin wall surface, the temperature can be rapidly increased and decreased, thereby greatly improving the throughput. In addition, since the inner and outer vacuum chambers are completely shut off, the load on a high-vacuum exhaust device such as a turbo-molecular pump is reduced, the exhaust time is reduced, and the throughput is further improved.

FIG. 5 is a cross-sectional view of a main part of a vacuum apparatus according to another embodiment of the present invention, in which only main parts are shown by cross-sectional views. In FIG. 5, the same reference numerals as those in FIGS. The components are the same as the components already described with reference to these drawings, and redundant description thereof will be omitted.

This vacuum apparatus is exemplified by a processing chamber (process chamber) having a double structure in which the mounting table 30 is built, and has a thick outer vacuum chamber 1 and a thin inner vacuum chamber 2. Transparent windows 1a and 2a made of quartz or the like are fitted into the respective central portions of the wall surfaces, and a heating mechanism by infrared irradiation by an infrared lamp 13 and a reflecting mirror 14 is provided outside the vacuum chamber above the windows 1a and 2a. Are formed. The mounting table 30 has a circular plate 31 having an annular outer edge portion formed in the periphery while forming a flat top surface, and is projected upward and retreated downward from the top surface of the outer edge portion by remote control. Multiple pins 32
a, 32b, and the plate 31 from outside the inner and outer vacuum chambers.
And a refrigerant injection pipe 33 for ejecting liquid nitrogen to the central portion.

The vacuum device of FIG. 5 is provided with a control unit 11 similar to that of the vacuum device of FIGS. 1 and 3, although not shown, and the temperature control unit in the control unit 11 is the same as that of FIG. 5, the same temperature control as that performed on the wall surface of the internal vacuum chamber 2 according to the timing shown in FIG. 2 is performed on the wall surface of the internal vacuum chamber 2 and the mounting table 30 in FIG.

That is, power supply to the heating wire 3 and the infrared lamp 13 is started prior to opening of the gate valves 9 and 10 for loading and unloading the substrate, and the temperature of the wall surface of the inner vacuum chamber 2 and the mounting table 30 is controlled. Is rapidly increased from a value near room temperature to about 140 ^° C. Thereafter, the gate valves 9 and 10 are opened to carry in the substrate to be processed into the inner vacuum chamber 2 and carry out the processed substrate. The substrate carried in and placed on the mounting table is heated by a heating mechanism using infrared irradiation. During this heating period, the pins 32 of the mounting table 30
are protruded upward from the top surface of the outer edge thereof, and the thermal resistance due to conduction between the substrate W to be processed and the plate 31 is increased, so that the temperature of the substrate W to be processed is increased in a short time. Reach When the loading and unloading of the substrate are completed, the gate valves 9 and 10 are closed, and after a predetermined time from the closing, the power supply to the heating wire 3 and the infrared lamp 13 is stopped, and the water supply to the cooling water pipe 4 and the coolant injection pipe are performed. 3
When the supply of liquid nitrogen to the substrate 3 is started, the temperatures of the wall surface of the vacuum chamber 2, the mounting table 30, and the substrate W to be processed are rapidly reduced. During this temperature drop period, the pins 32a, 3
.. Are retracted below the top surface of the outer edge, the top surface and the peripheral portion of the substrate to be processed W are brought into contact with each other, and cooling and cooling are performed under an appropriate amount of exhaust resistance generated between the contact surfaces. The unnecessary nitrogen gas is exhausted.

FIG. 6 is a sectional view showing a main part of a vacuum apparatus according to another embodiment of the present invention, in which only a main part is shown in a sectional view. FIG. 5 shows a processing chamber that houses the mounting table 30, whereas FIG. 6 shows a spare chamber that houses the transport mechanism 40,
The point that the cooling mechanism is not added to the transport mechanism 40 is different from the case of FIG. Pins 41a, 41b corresponding to the pins 32a, 32b,... Of the mounting table in FIG. 5 are provided at the uppermost part of the transport mechanism 40 for mounting the processed substrate and the processed substrate.
.. Are planted and thermally insulated between the substrate and the uppermost portion of the transfer mechanism 40 during heating by infrared irradiation.

The configuration in which the mounting table in the processing chamber and the transfer mechanism in the preliminary chamber are heated or cooled together with the wall surface of the inner vacuum chamber at the timing shown in FIG. However, the cassette in the storage chamber may be heated or cooled together with the wall surface of the inner vacuum chamber at the timing shown in FIG.

Further, a configuration in which a cooling water pipe is wound around the wall surface of the inner vacuum chamber 2 and cooling water is supplied thereto to cool the wall surface has been exemplified. However, liquid nitrogen may be injected instead of the cooling water, or steam or cooling air generated from liquid nitrogen may be directly injected into the outer vacuum chamber.

The processing room, the spare room, and the storage room are not formed in a double structure, and the mounting table, the transfer robot,
Only the cassette may be heated and cooled at the timing shown in FIG.

Further, the configuration in which the wall surface of the inner vacuum chamber is heated and cooled together with a built-in device such as a built-in mounting table has been described. Cooling can also be performed.

[0032]

As described above, according to the vacuum apparatus or the control method of the present invention, from the time immediately before the door of the vacuum chamber is opened to the time when a predetermined time elapses after the door is closed again. Of the substrate to be processed built in the vacuum chamber
At least one of a sending means, a storage means or a mounting table
Since the two heaters are heated, even when the vacuum chamber is exposed to the outside air, it is possible to effectively prevent the adhesion of moisture and the like, to enable quick exhaust, and to greatly improve the throughput.

FIG. 7 shows experimental data supporting the effect of the present invention. This experimental data is obtained in the case where the temperature control according to the timing of FIG. 2 is performed only on the wall surface of the inner vacuum chamber 2 in the configuration of FIG.
The horizontal axis represents the elapsed time in minutes with the origin being the time when the gate valve 9 was closed and the evacuation was started after exposing the inner vacuum chamber 2 to the atmosphere, and the vertical axis was the degree of vacuum in units of Torr. is there. (1) is an exhaust curve in the case where the wall surface of the inner vacuum chamber 2 is kept at 140 ^° C. for three minutes from immediately before the gate valve 9 is opened until the gate valve 9 is closed again and the exhaust is started. (2) is an exhaust curve when the heating is not performed at all. In (3), the wall surface of the inner vacuum chamber 2 is kept at 140 ^° C. for about 60 minutes from 20 minutes after the start of evacuation without heating at all while being exposed to the atmospheric pressure.
, Which is known as the exhaust characteristic of baking (empty baking). In the case of this baking, since the heating before exposure to the atmospheric pressure is not performed, adhesion of moisture cannot be prevented, and the exhaust time is greatly increased as compared with the exhaust characteristic (3) according to the present invention. From this, it is clear that the same effect can be obtained even when only the transfer mechanism, the mounting table, and the cassette for the substrate accommodated in the vacuum chamber are heated and cooled at the timing shown in FIG.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a main part of a vacuum apparatus according to an embodiment of the present invention, showing only a main part in a sectional view.

FIG. 2 is a conceptual diagram showing an example of how the open / close state of a gate valve 9 in contact with the atmospheric pressure side in FIG. 1, the pressure inside and outside the vacuum chamber, and the temperature of the wall surface of the inside vacuum chamber 2 change with time. .

FIG. 3 is a cross-sectional view of a main part of a vacuum apparatus according to another embodiment of the present invention, showing only a main part of the vacuum apparatus.

FIG. 4 is an exploded partial perspective view showing the configuration of the mounting table 20 in FIG.

FIG. 5 is a sectional view showing a main part of a vacuum apparatus according to another embodiment of the present invention, in which only a main part is shown by a sectional view.

FIG. 6 is a cross-sectional view of a principal part showing only a main part of a vacuum apparatus according to another embodiment of the present invention by a cross-sectional view.

FIG. 7 shows experimental data of exhaust characteristics supporting the effect of the present invention.

FIG. 8 is a conceptual diagram for explaining a typical configuration of a vacuum device including a single or a plurality of vacuum chambers.

FIG. 9 is a cross-sectional view illustrating a configuration of a vacuum device corresponding to FIG.

[Explanation of symbols]

 Reference Signs List 1 outer vacuum chamber 2 inner vacuum chamber 1a, 2a translucent window 3 heating wire 4 cooling water pipe 5a, 6a exhaust pipe 5b, 6b exhaust valve 7 dry pump 8 turbo molecular pump 9, 10 gate valve 11 control unit 12 reserve Room 13 Infrared lamp 14 Reflector 20,30 Mounting table 40 Transfer mechanism PC Processing room (Process chamber) LL1, LL2 Spare room (Load lock chamber) CC1, CC2 Storage room (Cassette chamber)

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ identification code FI H01L 21/285 H01L 21/302 B 21/31 21/265 Z (58) Fields surveyed (Int.Cl. ⁶ , DB name) B01J 3/00-3/02 H01L 21/3065 H01L 21/205 H01L 21/265 H01L 21/285 H01L 21/31

Claims (14)

(57) [Claims] 1. A processing target built in a vacuum chamber from a time immediately before a door of a vacuum chamber is opened to a time after a predetermined time elapses after the door is closed and evacuation is started.
A vacuum apparatus comprising a heating means for heating a sheet conveying means . 2. The vacuum apparatus according to claim 1, wherein said transfer means is heated by a heat ray applied through a translucent window formed on a wall surface of said vacuum chamber. 3. The vacuum chamber includes an outer vacuum chamber surrounded by a thick wall, an inner vacuum chamber surrounded by a thin wall, and wall heating means for heating the thin wall of the inner vacuum chamber. 2. The vacuum apparatus according to claim 1, wherein the wall heating unit performs the heating operation in synchronization with a heating unit for the transport unit . 4. A time immediately before a door of a vacuum chamber is opened.
After a certain time after this door is closed again and exhaust starts
The processing target built in the vacuum chamber until the time of
A heating means for heating the plate storage means;
Vacuum equipment. 5. The storage means is formed on a wall of the vacuum chamber.
Heating with heat rays radiated through the transparent window
The vacuum apparatus according to claim 4, wherein the vacuum apparatus is received. 6. The outside of said vacuum chamber surrounded by a thick wall.
Side vacuum chamber and an inner vacuum chamber surrounded by thin walls.
Wall heating means for heating the thin wall of the inner vacuum chamber
The wall heating means is a heating means for the storage means.
Wherein the heating operation is performed in synchronization with
Item 5. The vacuum device according to Item 4. 7. The processing apparatus according to claim 1, wherein the vacuum chamber is mounted on the substrate to be processed in a vacuum state.
Before or before being brought into the processing room for performing the prescribed processing
The substrate to be processed after being unloaded from the processing chamber is temporarily
Claim 1 characterized by being a room for accommodation
7. The vacuum apparatus according to any one of 6. 8. From the time immediately before the door of the vacuum chamber is opened
After a certain time after this door is closed again and exhaust starts
The processing target built in the vacuum chamber until the time of
A heating means for heating the plate mounting table is provided.
Vacuum equipment. 9. A mounting table formed on a wall surface of the vacuum chamber.
Receiving heating by heat rays emitted through the the light-transmitting window
The vacuum apparatus according to claim 4, wherein the vacuum apparatus is operated. 10. The vacuum chamber is surrounded by a thick wall.
The outer vacuum chamber and the inner vacuum chamber surrounded by thin walls
Wall heating means for heating the thin wall of the vacuum chamber inside
Wherein said wall surface heating means is a heating means for said mounting table.
Wherein the heating operation is performed in synchronization with
Item 5. The vacuum device according to Item 4. 11. The substrate to be processed in a state where the vacuum chamber is in a vacuum state.
Is a processing chamber for performing predetermined processing on
The vacuum device according to any one of claims 8 to 10. 12. A first step of closing a door of a vacuum chamber, and a predetermined step of closing the vacuum chamber with the door of the vacuum chamber closed.
Second step of starting evacuation to bring the pressure to a vacuum state
And a state in which the vacuum chamber is maintained in a vacuum state at the predetermined pressure.
Heating the transfer means for the substrate to be processed in the vacuum chamber.
A third step to be started, and the heating causes the temperature of the transport means to be close to a predetermined temperature.
A fourth step of stopping the exhaust when the pressure reaches the pressure, and, after stopping the exhaust, reducing the pressure in the vacuum chamber to the pressure of the outside air.
A fifth step of raising the pressure until the pressure in the vacuum chamber becomes substantially equal to the pressure of the outside air.
A sixth step of opening the door from the above , wherein the pressure in the vacuum chamber is substantially equal to the pressure of the outside air, and
The vacuum chamber of the substrate to be processed in a state where the door is open
7th process for loading into or out of the vacuum chamber
And closing the door after loading or unloading the substrate to be processed.
In an eighth step, the vacuum chamber is evacuated to a predetermined pressure with the door closed.
A ninth step of starting exhaust to make the chamber empty, and terminating the heating after a lapse of a predetermined time from when the door is closed.
A method for controlling a vacuum apparatus, comprising: 13. A first step of closing a door of a vacuum chamber, and a predetermined step of closing the vacuum chamber with the door of the vacuum chamber closed.
Second step of starting evacuation to bring the pressure to a vacuum state
And a state in which the vacuum chamber is maintained in a vacuum state at the predetermined pressure.
Heating the storage means for the substrate to be processed in the vacuum chamber.
A third step to be started, and the heating causes the temperature of the storage means to be close to a predetermined temperature.
A fourth step of stopping the exhaust when the pressure reaches the pressure, and, after stopping the exhaust, reducing the pressure in the vacuum chamber to the pressure of the outside air.
A fifth step of raising the pressure until the pressure in the vacuum chamber becomes substantially equal to the pressure of the outside air.
A sixth step of opening the door from the above , wherein the pressure in the vacuum chamber is substantially equal to the pressure of the outside air, and
The vacuum chamber of the substrate to be processed in a state where the door is open
7th process for loading into or out of the vacuum chamber
And closing the door after loading or unloading the substrate to be processed.
In an eighth step, the vacuum chamber is evacuated to a predetermined pressure with the door closed.
A ninth step of starting exhaust to make the chamber empty, and terminating the heating after a lapse of a predetermined time from when the door is closed.
A method for controlling a vacuum apparatus, comprising: 14. A first step of closing a door of a vacuum chamber, and a predetermined step of closing the vacuum chamber with the door of the vacuum chamber closed.
Second step of starting evacuation to bring the pressure to a vacuum state
And a state in which the vacuum chamber is maintained in a vacuum state at the predetermined pressure.
To start heating the mounting table for the substrate to be processed in the vacuum chamber.
A third step to start, and the temperature of the mounting table reaches near a predetermined temperature by the heating.
A fourth step of stopping the evacuation when the evacuation is performed, and after the evacuation is stopped, the pressure in the vacuum chamber is reduced to the pressure of the outside air
A fifth step of raising the pressure until the pressure in the vacuum chamber becomes substantially equal to the pressure of the outside air.
A sixth step of opening the door from the above , wherein the pressure in the vacuum chamber is substantially equal to the pressure of the outside air, and
The vacuum chamber of the substrate to be processed in a state where the door is open
7th process for loading into or out of the vacuum chamber
And closing the door after loading or unloading the substrate to be processed.
In an eighth step, the vacuum chamber is evacuated to a predetermined pressure with the door closed.
A ninth step of starting exhaust to make the chamber empty, and terminating the heating after a lapse of a predetermined time from when the door is closed.
A method for controlling a vacuum apparatus, comprising: