JP2970609B2 - Resin-sealed electronic circuit device - Google Patents
Resin-sealed electronic circuit deviceInfo
- Publication number
- JP2970609B2 JP2970609B2 JP19323797A JP19323797A JP2970609B2 JP 2970609 B2 JP2970609 B2 JP 2970609B2 JP 19323797 A JP19323797 A JP 19323797A JP 19323797 A JP19323797 A JP 19323797A JP 2970609 B2 JP2970609 B2 JP 2970609B2
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- circuit board
- resin
- electronic circuit
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子、集積
回路等の電子回路部品を含む樹脂封止型電子回路装置に
関する。The present invention relates to a resin-sealed electronic circuit device including electronic circuit components such as semiconductor elements and integrated circuits.
【０００２】[0002]
【従来の技術】樹脂封止型電子回路装置として図１に示
すように、放熱性を有する金属製支持板１の主面（表
面）上に半導体素子２をろう材（半田）３で固着すると
共に回路素子４ａを有する絶縁性回路基板４を熱硬化性
のエポキシ系接着剤５で固着し、半導体素子２を覆うよ
うにポリイミド又はポリアミド系樹脂等の保護樹脂層６
を設け、回路基板４の表面を覆うようにシリコーンラバ
ーから成る保護樹脂層７を設け、半導体素子２、回路基
板４、内部リード細線８を覆うようにエポキシ系樹脂か
ら成る樹脂封止体９を設けたものが知られている。な
お、回路基板４上にはフリップチップ等の回路素子４ａ
の他に配線導体（図示せず）等が設けられている。ま
た、支持板１からは連結外部リード１０が導出され、更
に非連結外部リードも設けられている。また、樹脂封止
体９はシリカ等の充填材を多く含むものであり、緻密
性、水密性に欠けているので、保護樹脂層６、７は耐湿
性を高めるために設けられている。2. Description of the Related Art As a resin-sealed electronic circuit device, as shown in FIG. 1, a semiconductor element 2 is fixed on a main surface (front surface) of a metal support plate 1 having heat dissipation properties with a brazing material (solder) 3. At the same time, the insulating circuit board 4 having the circuit element 4a is fixed with a thermosetting epoxy-based adhesive 5, and a protective resin layer 6 such as a polyimide or polyamide resin is covered so as to cover the semiconductor element 2.
Is provided, a protective resin layer 7 made of silicone rubber is provided so as to cover the surface of the circuit board 4, and a resin sealing body 9 made of epoxy resin is provided so as to cover the semiconductor element 2, the circuit board 4, and the internal lead fine wires 8. What is provided is known. A circuit element 4a such as a flip chip is provided on the circuit board 4.
In addition, a wiring conductor (not shown) and the like are provided. Further, a connected external lead 10 is led out from the support plate 1, and a non-connected external lead is further provided. Further, the resin sealing body 9 contains a large amount of a filler such as silica, and lacks denseness and water tightness. Therefore, the protective resin layers 6 and 7 are provided to enhance moisture resistance.
【０００３】[0003]
【発明が解決しようとする課題】ところで、保護樹脂層
７をシリコーンラバーで形成しても十分な耐湿性を得る
ことができないことがある。この問題を解決するために
シリコーンラバーよりも耐湿性が優れているポリイミド
又はポリアミド系樹脂によって保護樹脂層７を形成する
ことがある。しかし、ポリイミド又はポリアミド系樹脂
で保護樹脂層７を形成すると、半導体素子２を固着して
いる半田から成るろう材３にクラック（亀裂）が生じ、
半導体素子２と支持板１との電気的接続が劣化したり、
半導体素子２が支持板１から剥離することがあった。こ
の理由は、必ずしも明らかではないが、ポリイミド系又
はポリアミド系樹脂から成る保護樹脂層７は、シリコー
ンラバーに比べて硬質であり、且つ樹脂封止体９との密
着性に優れていることに起因しているためと思われる。
即ち、図１の回路装置に温度サイクルが加わると、支持
板１の線膨張係数と回路基板４の線膨張係数の差に起因
して、回路基板４に反りが生じることがある。この反り
による応力が樹脂封止体９を介して半導体素子２に達し
て、半導体素子２を支持板１から剥離する作用が生じ、
半導体素子２をを固着している半田から成るろう材３に
クラック（亀裂）が発生し、半導体素子２と支持板１と
の電気的接続が劣化したり、半導体素子２が支持板１か
ら剥離することがあった。However, even if the protective resin layer 7 is formed of silicone rubber, it may not be possible to obtain sufficient moisture resistance. In order to solve this problem, the protective resin layer 7 may be formed of a polyimide or polyamide resin having better moisture resistance than silicone rubber. However, when the protective resin layer 7 is formed of a polyimide or polyamide resin, a crack (crack) occurs in the brazing material 3 made of solder that fixes the semiconductor element 2,
The electrical connection between the semiconductor element 2 and the support plate 1 is deteriorated,
The semiconductor element 2 may peel off from the support plate 1 in some cases. The reason for this is not necessarily clear, but the protective resin layer 7 made of a polyimide or polyamide resin is harder than silicone rubber and has excellent adhesion to the resin sealing body 9. It seems to be because.
That is, when a temperature cycle is applied to the circuit device of FIG. 1, the circuit board 4 may be warped due to the difference between the linear expansion coefficient of the support plate 1 and the linear expansion coefficient of the circuit board 4. The stress due to the warp reaches the semiconductor element 2 via the resin sealing body 9, causing an action of separating the semiconductor element 2 from the support plate 1,
Cracks (cracks) occur in the brazing material 3 made of solder to which the semiconductor element 2 is fixed, thereby deteriorating the electrical connection between the semiconductor element 2 and the support plate 1 or separating the semiconductor element 2 from the support plate 1. There was something to do.
【０００４】そこで、本発明は、ろう材の劣化を防ぐこ
とができる樹脂封止型電子回路装置を提供することを目
的とする。Accordingly, an object of the present invention is to provide a resin-sealed electronic circuit device capable of preventing deterioration of a brazing material.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するための本発明は、放熱性を有する金属製
の支持板と、前記支持板の一方の主面の第１の領域にろ
う材で固着された電子回路部品と、前記支持板の一方の
主面の第２の領域に接着剤で固着された回路基板と、前
記回路基板に設けられた回路素子と、前記回路素子を備
えた前記回路基板を被覆するように設けられたシリコ−
ンラバ−から成る保護被覆層と、前記電子回路部品及び
前記回路基板を覆い且つ前記保護被覆層に接触するよう
に前記支持板上に設けられた樹脂封止体とを備えた樹脂
封止型電子回路装置において、前記支持板の一方の主面
の前記第１の領域と前記第２の領域との間に凹部又は凸
部が設けられ、前記凹部又は凸部に前記樹脂封止体が結
合されていることを特徴とする樹脂封止型電子回路装置
に係わるものである。また、請求項２に示すように接着
剤を熱可塑性樹脂とすることができる。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems and to achieve the above-mentioned object, the present invention provides a heat-dissipating metal support plate and a first region on one main surface of the support plate. An electronic circuit component fixed with a brazing material, a circuit board fixed to a second region of one main surface of the support plate with an adhesive, a circuit element provided on the circuit board, and the circuit element Silicon provided to cover the circuit board provided with
A resin-encapsulated electronic device comprising: a protective coating layer made of a rubber; and a resin sealing body provided on the support plate so as to cover the electronic circuit component and the circuit board and to come into contact with the protective coating layer. In the circuit device, a concave portion or a convex portion is provided between the first region and the second region on one main surface of the support plate, and the resin sealing body is coupled to the concave portion or the convex portion. The present invention relates to a resin-sealed electronic circuit device characterized in that: Further, as described in claim 2, the adhesive can be a thermoplastic resin.
【０００６】[0006]
【発明の作用及び効果】請求項１の発明によれば、支持
板の第１及び第２の領域の間に凹部又は凸部が設けられ
ているので、支持板に対して樹脂封止体が強固に結合す
る。このため、回路基板に反りが生じ、これに基づく応
力が生じても、この応力の樹脂封止体を介しての伝達が
凹部又は凸部で抑制され、第１の領域の電子回路部品に
ほとんど及ばなくなり、電子回路部品を支持板から剥す
ような作用が抑制され、ろう材の劣化が少なくなる。ま
た、請求項２の発明によれば、接着剤が柔軟性を有する
熱可塑性樹脂から成るので、回路基板と支持板との線膨
張係数差に起因する応力をこの接着剤によって吸収し、
回路基板の反りを抑制することができる。According to the first aspect of the present invention, since the concave portion or the convex portion is provided between the first and second regions of the support plate, the resin sealing body is fixed to the support plate. Strongly bond. For this reason, even if the circuit board is warped and a stress based on the warp is generated, the transmission of the stress through the resin sealing body is suppressed by the concave portion or the convex portion, and almost all the electronic circuit components in the first region are not provided. The effect of peeling the electronic circuit component from the support plate is suppressed, and the deterioration of the brazing material is reduced. According to the second aspect of the present invention, since the adhesive is made of a thermoplastic resin having flexibility, a stress caused by a difference in linear expansion coefficient between the circuit board and the support plate is absorbed by the adhesive,
The warpage of the circuit board can be suppressed.
【０００７】[0007]
【実施例】次に、本発明の実施形態を示す樹脂封止型電
子回路装置を図２及び図３を参照して説明する。本実施
例の樹脂封止型電子回路装置は、放熱性を有する支持板
１１と、この上に半田から成るろう材１３で固着された
電子回路部品としての半導体素子１２と、支持板１１上
に熱可塑性樹脂から成る接着剤１５で固着された回路基
板１４と、半導体素子１２を覆う第１の保護樹脂層１６
と、回路基板１４を覆う第２の保護樹脂層１７と、内部
リード細線１８と、支持板１１、半導体素子１２、回路
基板１４及び内部リード細線１８を覆うエポキシ系樹脂
から成る樹脂封止体１９とを備えている。Next, a resin-sealed electronic circuit device according to an embodiment of the present invention will be described with reference to FIGS. The resin-sealed electronic circuit device according to the present embodiment includes a support plate 11 having heat radiation properties, a semiconductor element 12 as an electronic circuit component fixed thereon with a brazing material 13 made of solder, and A circuit board 14 fixed with an adhesive 15 made of a thermoplastic resin, and a first protective resin layer 16 covering the semiconductor element 12
And a second protective resin layer 17 covering the circuit board 14, an internal lead fine wire 18, and a resin sealing body 19 made of an epoxy resin covering the support plate 11, the semiconductor element 12, the circuit board 14 and the internal lead fine wire 18. And
【０００８】支持板１１は放熱性を有する金属板から成
り、実質的に平坦な一方の主面（表面）２０と他方の主
面（裏面）２１とを有している。この支持板１１の一方
の主面２０は半導体素子１２がろう材１３で固着されて
いる第１の領域２０ａと回路基板１４が接着剤１５で固
着されている第２の領域２０ｂを有し、第１及び第２の
領域２０ａ、２０ｂの間に凹部として蟻溝形状の溝２２
が設けられている。また、支持板１１の一端面から連結
外部リード２３が導出されている。また、リードフレー
ムの状態で外部リード２３に連結され、その後に分離さ
れた非連結外部リード２４が連結外部リード２３に並置
されている。溝２２は支持板１１の一方の側面から他方
の側面に至るように直線状に延びている。溝２２は蟻溝
であるので、この入口の幅はこの底面の幅よりも狭い。
この溝２２の中には樹脂封止体１９が充填され、噛合の
作用によって支持板１１の溝２２の領域と樹脂封止体１
９との強固な結合が成立している。The support plate 11 is made of a metal plate having heat radiation properties, and has one substantially flat main surface (front surface) 20 and the other main surface (back surface) 21. One main surface 20 of the support plate 11 has a first region 20a to which the semiconductor element 12 is fixed with the brazing material 13 and a second region 20b to which the circuit board 14 is fixed with the adhesive 15. A dovetail-shaped groove 22 as a recess between the first and second regions 20a, 20b
Is provided. A connecting external lead 23 extends from one end surface of the support plate 11. Further, the unconnected external leads 24 connected to the external leads 23 in the state of the lead frame and separated thereafter are juxtaposed to the connected external leads 23. The groove 22 extends linearly from one side surface of the support plate 11 to the other side surface. Since the groove 22 is a dovetail groove, the width of the entrance is smaller than the width of the bottom surface.
The groove 22 is filled with a resin sealing body 19, and the region of the groove 22 of the support plate 11 and the resin sealing body 1
A strong bond with No. 9 is established.
【０００９】支持板１１は、銅を母材とし、この銅の表
面に無電解メッキ法によってＮｉ（ニッケル）から成る
半田付け性の良い金属層（図示せず）を設けたものであ
り、半導体素子１２の半導体基板及び回路基板１４より
も厚く形成されている。The support plate 11 is made of copper as a base material, and is provided with a metal layer (not shown) made of Ni (nickel) having good solderability by electroless plating on the surface of the copper. It is formed thicker than the semiconductor substrate of the element 12 and the circuit board 14.
【００１０】半導体素子１２はパワートランジスタであ
って、ＰＮ接合を含む半導体基板とこの基板の下面に形
成されたコレクタ電極と、この基板の上面に形成された
ベース電極及びエミッタ電極とを有し、下面のコレクタ
電極が鉛錫半田から成るろう材１３によって支持板１１
の第１の領域２０ａに固着され且つ電気的に接続されて
いる。なお、半導体素子１２の上面側のベース電極及び
エミッタ電極はリード細線１８によって回路基板１４上
の配線導体を中継して外部リード２４に接続されてい
る。また、半導体素子１２の上面はポリイミド又はポリ
アミド樹脂から成る保護樹脂層１６で被覆されている。The semiconductor element 12 is a power transistor and has a semiconductor substrate including a PN junction, a collector electrode formed on the lower surface of the substrate, a base electrode and an emitter electrode formed on the upper surface of the substrate, The collector plate on the lower surface is supported by a brazing material 13 made of lead-tin solder.
Is fixed to and electrically connected to the first region 20a. The base electrode and the emitter electrode on the upper surface side of the semiconductor element 12 are connected to the external leads 24 by relaying the wiring conductor on the circuit board 14 by the thin lead wires 18. The upper surface of the semiconductor element 12 is covered with a protective resin layer 16 made of polyimide or polyamide resin.
【００１１】回路基板１４はエポキシ系樹脂から成る絶
縁性基板であって、支持板１１よりも変形し易いもので
ある。即ち回路基板１４の体積弾性係数は支持板３の体
積弾性係数よりも小さく、支持板１１よりも変形し易
い。回路基板１４の下面は熱可塑性樹脂から成る絶縁性
接着剤１５によって支持板１１の第２の領域２０ｂに固
着されている。なお、接着剤１５は回路基板１４よりも
大きい柔軟性及び弾性を有する。即ち接着剤１５の体積
弾性係数は回路基板１４のそれよりも小さい。回路基板
１４の表面にはフリップチップ等の回路素子１４ａが固
着されており、また多数の配線導体（図示せず）が設け
られている。The circuit board 14 is an insulating substrate made of an epoxy resin, and is more easily deformed than the support plate 11. That is, the bulk modulus of the circuit board 14 is smaller than the bulk modulus of the support plate 3 and is more easily deformed than the support plate 11. The lower surface of the circuit board 14 is fixed to the second region 20b of the support plate 11 by an insulating adhesive 15 made of a thermoplastic resin. The adhesive 15 has greater flexibility and elasticity than the circuit board 14. That is, the bulk modulus of the adhesive 15 is smaller than that of the circuit board 14. A circuit element 14a such as a flip chip is fixed to the surface of the circuit board 14, and a large number of wiring conductors (not shown) are provided.
【００１２】回路基板１４上の回路素子１４ａ及び配線
導体等を保護するために回路基板１４上に設けられた保
護樹脂層１７は、シリコ−ンラバ−から成る。なお、保
護樹脂層１７を形成する時には、回路素子１４ａを覆う
ように回路基板１４上に液状の樹脂を滴下し、しかる後
固化し、回路基板１４の上面のほぼ全部を覆うように保
護樹脂層１７を形成する。この時、液状保護樹脂が回路
基板１４の外側に垂れることがあるが、この広がりが溝
２２で阻止される。The protective resin layer 17 provided on the circuit board 14 for protecting the circuit elements 14a, the wiring conductors and the like on the circuit board 14 is made of silicone rubber. When the protective resin layer 17 is formed, a liquid resin is dropped onto the circuit board 14 so as to cover the circuit element 14a, and then solidified, and the protective resin layer is formed so as to cover almost the entire upper surface of the circuit board 14. 17 is formed. At this time, the liquid protective resin may droop outside the circuit board 14, but this spread is prevented by the groove 22.
【００１３】樹脂封止体１９は熱硬化性のエポキシ樹脂
と充填材とから成り、周知のトランスファモールド法に
よって形成されている。即ち、樹脂封止体１９は半導体
素子１２、回路基板１４、支持板１１の溝２２を含む一
方の主面２０及び側面、内部リード細線１８の全部、及
び外部リード２３、２４の一部を覆うように形成されて
いる。従って、樹脂封止体１９は保護樹脂層１６、１７
に強固に密着（固着）されていると共に、支持板１１の
溝２２を含む主面２０に対しても比較的強固に密着（固
着）されている。The resin sealing body 19 is made of a thermosetting epoxy resin and a filler, and is formed by a well-known transfer molding method. That is, the resin sealing body 19 covers the semiconductor element 12, the circuit board 14, the one main surface 20 and the side surface including the groove 22 of the support plate 11, all of the internal lead fine wires 18, and part of the external leads 23 and 24. It is formed as follows. Accordingly, the resin sealing body 19 is formed of the protective resin layers 16 and 17.
And is relatively firmly adhered (fixed) to the main surface 20 including the groove 22 of the support plate 11.
【００１４】樹脂封止型電子回路装置を図２及び図３に
示すように形成すると、この回路装置にヒートサイクル
（高温と低温との繰返し）が加わっても、ろう材１３の
劣化（クラック等）が少なく、半導体素子１２の支持板
１１からの剥離が生じない。これは次の作用効果に基づ
いている。 （１） 支持板１１に蟻溝形状の溝２２が形成されてお
り、この溝２２に樹脂封止体１９の一部が充填されるた
め、支持板１１と樹脂封止体１９とが強固に密着（結
合）する。このため、ヒートサイクルで回路基板１４に
反りが生じても、この反りによる応力が樹脂封止体１９
を介して半導体素子１２に加わることが抑制され、半導
体素子１２の剥離作用も抑制される。 （２） 回路基板１４を支持板１１に固着する接着剤１
５が熱可塑性樹脂から成り、比較的柔軟性があるため、
回路基板１４と支持板１１との線膨張係数差に起因する
応力がこの接着剤１５で吸収され、回路基板１４の反り
が少なくなり、この反りによる応力が小さくなり、半導
体素子１２の剥離作用が抑制される。 （３） 支持板１１の表面（少なくとも半導体素子１２
の固着面）に無電解メッキ法によって半田ぬれ性の良い
金属層が形成されているため、ろう材１３を支持板１１
に強固に固着することができる。即ち、無電解メッキ法
によれば、金属層を支持板１１の表面に均一に且つ比較
的肉厚に形成することができる。従って、半導体素子１
２の下面の全部において、ろう材１３が支持板１１の金
属層に強固に密着し、半導体素子１２の強固な結合が達
成され、半導体素子１２が剥離し難くなる。 なお、無電解メッキ法ではなくて電解メッキ法で支持板
１１に金属層（Ｎｉメッキ層）を形成することもでき
る。しかし、電解メッキ法によれば無電解メッキ法のよ
うに均一にメッキ層を形成することはできない。When the resin-sealed electronic circuit device is formed as shown in FIGS. 2 and 3, even if a heat cycle (repetition of high and low temperatures) is applied to the circuit device, the brazing material 13 is deteriorated (cracks and the like). ), And the semiconductor element 12 does not peel off from the support plate 11. This is based on the following effects. (1) Since the support plate 11 is formed with a dovetail-shaped groove 22 and a part of the resin sealing body 19 is filled in the groove 22, the support plate 11 and the resin sealing body 19 are firmly connected. Adhere (bond). For this reason, even if the circuit board 14 is warped in the heat cycle, the stress due to the warp is applied to the resin sealing body 19.
Is suppressed from being applied to the semiconductor element 12 via the semiconductor element 12, and the peeling action of the semiconductor element 12 is also suppressed. (2) Adhesive 1 for fixing circuit board 14 to support plate 11
5 is made of a thermoplastic resin and is relatively flexible.
The stress caused by the difference in linear expansion coefficient between the circuit board 14 and the support plate 11 is absorbed by the adhesive 15, the warpage of the circuit board 14 is reduced, the stress due to the warp is reduced, and the peeling action of the semiconductor element 12 is reduced. Is suppressed. (3) The surface of the support plate 11 (at least the semiconductor element 12
Since a metal layer having good solder wettability is formed on the fixing surface of the support plate 11 by electroless plating,
Can be firmly fixed. That is, according to the electroless plating method, the metal layer can be formed uniformly and relatively thick on the surface of the support plate 11. Therefore, the semiconductor element 1
On the whole of the lower surface of 2, the brazing material 13 is firmly adhered to the metal layer of the support plate 11, so that a firm connection of the semiconductor element 12 is achieved, and the semiconductor element 12 is hard to peel. The metal layer (Ni plating layer) may be formed on the support plate 11 by an electrolytic plating method instead of the electroless plating method. However, according to the electroplating method, a plating layer cannot be formed uniformly as in the electroless plating method.
【００１５】[0015]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 樹脂封止体１９を支持板１１の他方の主面２１
側も被覆するように形成することができる。 （２） 回路基板１４を固着する接着剤１５をエポキシ
系樹脂等の熱硬化性接着剤とすることもできる。但し、
熱可塑性の樹脂の方が望ましい。 （３） 溝２２は支持板１１の上面の回路基板１４と半
導体素子１２との間に間欠的に設けてもよい。但し、回
路基板１４の反りに伴う応力が樹脂封止体１９を通じて
半導体素子１２に加わることを十分に抑制するために、
溝２２は回路基板１４と半導体素子１２との間において
支持板１１の一方の側面から他方の側面に至るように形
成することが望ましい。 （４） 半導体素子１２はダイオード、ＦＥＴ等であっ
てもよい。 （５） 半導体素子１２の保護樹脂層１６をポリイミド
又はポリアミド樹脂以外の耐湿性絶縁樹脂にすることが
できる。 （６） 溝２２の代りに凸状部を設け、樹脂封止体１９
との結合強度を強めることができる。 （７） 接着剤１５を導電性接着剤とすることができ
る。 （８） 保護樹脂層１６は、支持板１１の一方の主面２
０及び溝２２を被覆していてもよい。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) The resin sealing body 19 is attached to the other main surface 21 of the support plate 11.
The side can also be formed to cover. (2) The adhesive 15 for fixing the circuit board 14 may be a thermosetting adhesive such as an epoxy resin. However,
Thermoplastic resins are more desirable. (3) The groove 22 may be provided intermittently between the circuit board 14 on the upper surface of the support plate 11 and the semiconductor element 12. However, in order to sufficiently suppress the stress accompanying the warpage of the circuit board 14 from being applied to the semiconductor element 12 through the resin sealing body 19,
The groove 22 is desirably formed between the circuit board 14 and the semiconductor element 12 so as to extend from one side surface of the support plate 11 to the other side surface. (4) The semiconductor element 12 may be a diode, an FET, or the like. (5) The protective resin layer 16 of the semiconductor element 12 can be made of a moisture-resistant insulating resin other than polyimide or polyamide resin. (6) A convex portion is provided instead of the groove 22, and the resin sealing body 19 is provided.
And the strength of the bond with the substrate. (7) The adhesive 15 can be a conductive adhesive. (8) The protective resin layer 16 is formed on one main surface 2 of the support plate 11.
0 and the groove 22 may be covered.
【図面の簡単な説明】[Brief description of the drawings]
【図１】従来の樹脂封止型電子回路装置を示す断面図で
ある。FIG. 1 is a cross-sectional view showing a conventional resin-sealed electronic circuit device.
【図２】本発明の実施例の樹脂封止型電子回路装置を示
す平面図である。FIG. 2 is a plan view showing a resin-sealed electronic circuit device according to an embodiment of the present invention.
【図３】図２の樹脂封止型電子回路装置を示す断面図で
ある。FIG. 3 is a sectional view showing the resin-sealed electronic circuit device of FIG. 2;
１１ 支持板 １２ 半導体素子 １３ ろう材 １４ 回路基板 １５ 接着剤 １６、１７ 保護樹脂層 １９ 樹脂封止体 DESCRIPTION OF SYMBOLS 11 Support plate 12 Semiconductor element 13 Brazing material 14 Circuit board 15 Adhesive 16, 17 Protective resin layer 19 Resin sealing body
Claims (2)
れた電子回路部品と、 前記支持板の一方の主面の第２の領域に接着剤で固着さ
れた回路基板と、 前記回路基板に設けられた回路素子と、 前記回路素子を備えた前記回路基板を被覆するように設
けられたシリコ−ンラバ−から成る保護被覆層と、 前記電子回路部品及び前記回路基板を覆い且つ前記保護
被覆層に接触するように前記支持板上に設けられた樹脂
封止体とを備えた樹脂封止型電子回路装置において、 前記支持板の一方の主面の前記第１の領域と前記第２の
領域との間に凹部又は凸部が設けられ、前記凹部又は凸
部に前記樹脂封止体が結合されていることを特徴とする
樹脂封止型電子回路装置。1. A support plate made of metal having a heat radiation property, an electronic circuit component fixed to a first region of one main surface of the support plate with a brazing material, and a first main surface of the support plate A circuit board fixed to the second region with an adhesive, a circuit element provided on the circuit board, and a silicon rubber provided so as to cover the circuit board provided with the circuit element; A resin-sealed electronic circuit device comprising: a coating layer; and a resin sealing body provided on the support plate so as to cover the electronic circuit component and the circuit board and to contact the protective coating layer. A concave portion or a convex portion is provided between the first region and the second region on one main surface of the support plate, and the resin sealing body is coupled to the concave portion or the convex portion. Resin-sealed electronic circuit device.
れた電子回路部品と、 前記支持板の一方の主面の第２の領域に接着剤で固着さ
れた回路基板と、 前記回路基板に設けられた回路素子と、 前記回路素子を備えた前記回路基板を被覆するように設
けられたシリコ−ンラバ−から成る保護被覆層と、 前記電子回路部品及び前記回路基板を覆い且つ前記保護
被覆層に接触するように前記支持板上側に設けられた樹
脂封止体とを備えた樹脂封止型電子回路装置において、 前記接着剤が前記回路基板よりも柔軟性の大きい熱可塑
性樹脂から成ることを特徴とする樹脂封止型電子回路装
置。2. A support plate made of metal having a heat radiation property, an electronic circuit component fixed to a first region of one main surface of the support plate with a brazing material, and one of the main surfaces of the support plate A circuit board fixed to the second region with an adhesive, a circuit element provided on the circuit board, and a silicon rubber provided so as to cover the circuit board provided with the circuit element; In a resin-sealed electronic circuit device, comprising: a coating layer; and a resin sealing body provided on an upper side of the support plate so as to cover the electronic circuit component and the circuit board and to be in contact with the protective coating layer. A resin-sealed electronic circuit device, wherein the adhesive is made of a thermoplastic resin having greater flexibility than the circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19323797A JP2970609B2 (en) | 1997-07-02 | 1997-07-02 | Resin-sealed electronic circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19323797A JP2970609B2 (en) | 1997-07-02 | 1997-07-02 | Resin-sealed electronic circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1126688A JPH1126688A (en) | 1999-01-29 |
| JP2970609B2 true JP2970609B2 (en) | 1999-11-02 |
Family
ID=16304620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19323797A Expired - Fee Related JP2970609B2 (en) | 1997-07-02 | 1997-07-02 | Resin-sealed electronic circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2970609B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3866880B2 (en) * | 1999-06-28 | 2007-01-10 | 株式会社日立製作所 | Resin-sealed electronic device |
| TW200801156A (en) | 2002-11-29 | 2008-01-01 | Hitachi Chemical Co Ltd | Adhesive composition for circuit connection |
| JP2007059575A (en) * | 2005-08-24 | 2007-03-08 | Diamond Electric Mfg Co Ltd | Ignitor |
| WO2007148398A1 (en) * | 2006-06-22 | 2007-12-27 | Fujitsu Limited | Resin-sealed module, optical module and method of resin sealing |
| JP2008016564A (en) * | 2006-07-04 | 2008-01-24 | Mitsubishi Electric Corp | Resin sealed power module |
| JP5713032B2 (en) * | 2013-01-21 | 2015-05-07 | トヨタ自動車株式会社 | Manufacturing method of semiconductor device |
-
1997
- 1997-07-02 JP JP19323797A patent/JP2970609B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1126688A (en) | 1999-01-29 |
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