JP2967266B2 - Heat treatment equipment for semiconductors - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention is, for example, a semiconductor heating treatment for performing a heat treatment of the semiconductor wafer using a resistance heater over which is used when performing processing such as oxidation or a thin film formed by heating the semiconductor wafer It concerns the device.

[0002]

2. Description of the Related Art Conventionally, as a resistance heating heater used for heat treatment of a semiconductor wafer, an alloy made of an alloy in which a Nichrome wire or the like is used as a resistance heating portion and a current is caused to flow through the resistance heating portion to generate Joule heat. Resistance heating heater,
Alternatively, a ceramic sintered body such as molybdenum silicide (MoSi) or silicon carbide (SiC) is used as the resistance heating section,
A resistance heating heater made of silicide, which generates Joule heat by passing a current through the resistance heating portion, has been widely used.

[0003]

Among the above-described conventional resistance heating heaters, the resistance heating heater made of alloy using a nichrome wire or the like as a resistance heating portion has a large heat capacity because a relatively large diameter nichrome wire or the like is used. When the continuous processing is performed while changing the heat treatment temperature of the object to be processed such as a semiconductor wafer for each wafer, an appropriate heating temperature corresponding to the number of times of processing is required because the heat generation amount is large and cannot be controlled at high speed. There is a problem in that the heat treatment cannot be performed, and the heat treatment varies from one object to another. On the other hand, a silicide resistance heating heater using a ceramic sintered body as a resistance heating portion has a smaller heat capacity than the above-described alloy resistance heating heater, and can control the amount of heat generation at a high speed. Although it is possible to suppress the variation of the heating temperature and the heating process when continuously processing the workpieces with different temperatures, it contains various heavy metals and other impurities in the heater manufacturing process, and under rated operating conditions. Also, these elements evaporate from the surface of the heater, float and adhere to the inside of the heat treatment apparatus, and eventually reach the wafer to be processed, and diffuse into the wafer to be heated to a high temperature. There is a problem of having a significant adverse effect.

Further, in order to prevent the contamination from the heater as described above, in a conventional heat treatment apparatus, the diffusion and transmission speed of impurity atoms is low, and silicon carbide (SiC) is a material that can prevent the penetration of impurities for a certain period of time. A barrier container is installed by using the above-described method, and a wafer to be processed is installed inside the SiC barrier container, and the wafer is isolated from an external heater. In this case, the capacity is large due to the inclusion of a barrier container for preventing the diffusion of impurities, and it is necessary to wait a long time for the temperature to stabilize in order to change the heat treatment temperature of the wafer to be processed. This has left a problem in the demand for a single wafer or a small lot of the heat treatment that has occurred with the increase in the diameter of the wafer, and in the prompt response to the change in the heat treatment condition for each small lot or every single wafer. Such a problem is not limited to the problem of the resistance heating heater alone, but is also a problem common to a semiconductor heat treatment apparatus that performs heat treatment of a semiconductor wafer using the resistance heating heater.

On the other hand, in a semiconductor heat treatment apparatus,
It is necessary to heat the semiconductor wafer in various gas flows depending on the applied process, and the temperature distribution of the wafer changes depending on the flow distribution, and also depending on the element structure built in the wafer. There is a possibility that the temperature distribution changes, and it is easy to create a heat source having a uniform temperature, but there is a problem that it is difficult to change and correct the temperature at a high speed partially.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and is capable of appropriately coping with continuous processing of an object to be processed having a different heat treatment temperature for each sheet by reducing the heat capacity of the resistance heating portion. However, there is provided a semiconductor heat treatment apparatus using a resistance heating heater capable of uniformly and rapidly performing a heat treatment without releasing impurities during the heat treatment and generating defects or the like. It is intended to be.

[0007]

To achieve SUMMARY OF to the above objects, as the first 1st resistance heating heater, formed by molding a ceramic film such as SiC film formed by chemical vapor deposition in a predetermined shape a resistance heating unit, it is also of that have an electrode supplying a current to the resistance heating unit, also,
As the second resistance heating heater , a resistance heating part in which a SiC film is formed by a chemical vapor deposition method on a surface of a substrate having a predetermined shape made of a ceramic sintered body or graphite, and an electric current is supplied to the resistance heating part. that it has an electrode
It is also of the.

[0008] The first or second resistance heating heat
According to the reporter , since the whole or surface of the resistance heating section is formed from a ceramic film such as a SiC film formed by a chemical vapor deposition method, an alloy resistance heating heater using a nichrome wire or the like as a resistance heating section. In comparison with, the heat capacity of the resistance heating section is reduced, enabling high-speed control of the heating value.
Not only is it easy to cope with the continuous processing of the wafers to be processed, each of which has a different heat treatment temperature, and very little impurities are released from the heater surface during the heat treatment, preventing contamination of the wafers to be processed. Since a barrier container for preventing impurities is not required, the heat capacity is small, and the temperature can be changed quickly. Therefore, changing the heat treatment temperature lowers the temperature of the heater during a standby period such as during the replacement of a wafer to be processed. In addition, it is possible to reduce the power consumption and extend the life of the heater by an operation method such as increasing the current after the wafer is installed and heating the wafer to a high temperature. Further, since there is no need to dispose a barrier for preventing diffusion of impurities between the heater and the wafer to be processed, there is no heat loss due to the barrier, and the heat capacity of the resistance heating portion can be further reduced.

[0009] Then, the semiconductor heating treatment apparatus according to the first aspect of the present invention, along with the resistance heating portion of the resistive heating heater configurations according to the 1st to the fixed support in position along the horizontal plane A cooling fluid flow pipe is disposed inside or on the side of the electrode of the resistance heating heater, and passes through the resistance heating portion in the horizontal posture up and down through a supporting member provided to be vertically movable. 3. The semiconductor device according to claim 2 , wherein the semiconductor wafer is held horizontally to be displaceable between a heating operation position and a take-out position with respect to the resistance heating portion. use heat treatment apparatus, together with the resistance heating portion of the resistive heating heater configurations according to the first second is fixedly supported to the posture along the horizontal plane, it lays also inside the resistance heating heater electrode A cooling fluid flow pipe is provided on the side, and the semiconductor wafer is horizontally held through a supporting member movably provided up and down through the resistance heating section in the horizontal position. It is characterized in that it is configured so as to be freely displaceable between a heating action position and a removal position with respect to the resistance heating portion.

According to the first or second aspect of the present invention, the resistance heating portion has a very small heat capacity, can cope with continuous processing, and does not emit impurities during the heat treatment of the semiconductor wafer. In addition to using a heating heater, the resistance heating portion of such a resistance heating heater is fixed in a position along a horizontal plane, and a semiconductor wafer is particularly horizontally held and opposed to the resistance heating portion in a horizontal position one by one. By performing direct heating, it is possible to heat the semiconductor wafer quickly and with good reproducibility so as to have a uniform temperature distribution over the entire area irrespective of its size and shape.

[0011] In the semiconductor heat treatment apparatus according to the first or second aspect of the present invention, as described in the third aspect , the supporting member for the semiconductor wafer may be formed in a vertical direction formed at a central portion thereof. When configured to be rotatable around the axis, by rotating the semiconductor wafer during heating,
It is possible to efficiently perform the heat treatment to a predetermined temperature while reducing the partial temperature difference in the circumferential direction and uniformizing the temperature distribution in the plane.

According to a fourth aspect of the present invention, there is provided a heat treatment apparatus for a semiconductor according to the present invention, wherein the first heat treatment space is provided below a heat treatment space having an opening for loading / unloading a semiconductor wafer from a horizontal direction. The described resistance heating heater is fixedly arranged with its resistance heating part in a posture along a horizontal plane, and a plurality of heating lamps are arranged in parallel along the horizontal plane at the top of the heat treatment space, Further, a wafer holding unit for horizontally holding a semiconductor wafer is provided at a position facing the resistance heating unit in the horizontal posture in the resistance heating heater and the plurality of heating lamps in the heating processing space, and the wafer holding unit is provided with the wafer holding unit. it is intended, characterized in that the wafer transport means for loading and unloading through the opening a semiconductor wafer one by one is provided, also, half of the invention according to claim 5 -Body heat treatment apparatus, the resistance heating portion resistance heating heater described in the first second in the lower part of the heat treatment space with an opening for loading and unloading the semiconductor wafer from the horizontal direction to the side in a horizontal plane Along the horizontal position, a plurality of heating lamps are arranged in parallel along the horizontal plane, and the heating lamp is horizontally arranged in the resistance heating heater in the heating processing space. A wafer holding unit for horizontally holding a semiconductor wafer is provided at a position facing the resistance heating unit in the posture and the plurality of heating lamps, and semiconductor wafers are carried into and out of the wafer holding unit one by one through the opening. A wafer transfer means is provided.

According to the fourth or fifth aspect of the present invention, the resistance heat generating portion has a very small heat capacity, can cope with continuous processing, and does not release impurities during the heat treatment of the semiconductor wafer. The combined use of a heating heater and a large number of heating lamps that can be easily controlled locally enables the resistance heating heater to generate heat continuously to maintain a constant heating value and maintain a high temperature in the heating processing space. The heating lamp controls the amount of heat generated by the heating lamp in accordance with the required heat treatment temperature for each semiconductor wafer while preventing low-temperature outside air from being brought into the heat treatment space when the semiconductor wafer is carried into the heat treatment space. This makes it possible to quickly control the temperature of the heat treatment for the semiconductor wafer to a predetermined temperature, and also to control the heat so that the entire semiconductor ware has a uniform temperature. In, it is possible to perform heat treatment of the good product yield semiconductor very efficiently.

Further, as the wafer holding portion in the semiconductor heat treatment apparatus according to the invention of claim 4 or 5 , the semiconductor wafer held in a horizontal posture by the holding portion as in claim 6 is provided. When using a heater configured to be able to move up and down by passing vertically through the resistance heating section of the resistance heating heater in order to transfer it to the wafer transfer means, simply reciprocate the wafer transfer means along the horizontal plane It is possible to reduce the area of the opening on the side of the heat treatment space by making it thin and moving, and to suppress heat dissipation loss from the heat treatment space. In addition, since the semiconductor wafer can be directly heated by approaching the resistance heating portion of the resistance heating heater, the predetermined heat treatment efficiency can be further enhanced.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. Figure 1 is a plan view showing an example of a resistance <br/> antipyretic heater according to the first above, the resistance heating heater A, as shown in FIG. 2, SiC and MoSi,
An SiC thick film 2 (which is formed of MoS) formed on a surface of a substrate 1 made of a ceramic sintered body such as AlSi or graphite by a chemical vapor deposition method (hereinafter, referred to as a CVD method).
i, a ceramic thick film such as AlSi) may be peeled off from the substrate 1, and the peeled SiC thick film 2 may be formed in a zigzag with a certain gap so that the entire outer shape is circular. 3 and carbon electrodes 4 and 4 electrically connected to both ends of the ceramic thin film 2 so that a current flows through the resistance heating portion 3.

In the resistance heating heater A having the above-described configuration, a current I [A] is supplied to the resistance heating section 3 having a resistance R [Ω] through the carbon electrodes 4 and 4 for t [seconds], thereby making the resistance heating section A predetermined heat treatment is performed by generating Joule heat of RI ² t in the inside 3 and radiating this Joule heat from the resistance heating portion 3 toward the object to be processed. Here, since the resistance heating portion 3 is made of the SiC thick film 2, the heat capacity of the resistance heating portion 3 is low, the heat generation amount can be controlled at a high speed, and impurities can be released during the heat treatment. Since there is no need to provide barriers to prevent diffusion of impurities, the temperature distribution of the objects to be processed is made uniform, and each object to be processed is heated quickly and accurately without warping or thermal stress defects. It is possible to

[0017] Figure 3 is a plan view showing another example of a resistance heating heater according to the first above, the resistance heating heater B, as shown in FIG. 2, SiC and MoSi, AlS
A resistance heating section formed by forming a SiC thick film 2 peeled from the substrate 1 into a spiral shape forming a double helix after forming on a surface of a substrate 1 made of a ceramic sintered body or graphite such as i by a CVD method. 3 and carbon electrodes 4 and 4 electrically connected to both ends of the SiC thick film 2 so that a current flows through the resistance heating portion 3.

In the resistance heating heater B shown in FIG. 3, similarly to the resistance heating heater A shown in FIG. 1, Joule heat is generated by flowing a current to the spiral resistance heating portion 3 through the carbon electrodes 4 and 4. Is generated, and this Joule heat is radiated in a plane toward the object to be processed, so that the predetermined heat treatment can be performed efficiently and with high precision.

[0019] The above examples of resistance heating heater according to the second, as a resistance heating unit 3, as shown in FIG. 2, a substrate 1 made of SiC and MoSi, ceramic sintered body or graphite such as AlSi Using the complex formed by forming the SiC film 2 on the surface of the
The resistance heating section 3 having such a configuration is formed in the same planar shape as the resistance heating heater A shown in FIG. 1 or the resistance heating heater B shown in FIG. 3, and the illustration thereof is omitted.

[0020] Here, SiC thick 2 in resistance heating heater according to the first th is never film itself was peeled off from the substrate 1 is bent by its own weight thickness, i.e. 50μ
m or more, and the SiC film 2 in the resistance heating heater described in the second above requires a large current to flow in order to use SiC which is a semiconductor having a high resistance value as a heating element. Since the conductor requires a certain cross-sectional area, it is preferable that the conductor has a thickness of 500 μm or more. Further, the SiC film is preferably of high purity from the viewpoint of preventing wafer contamination, and the contents of Cu, Fe, and Zn are preferably Cu: 70 ppb or less, Fe: 30 ppb or less, and Zn: 6 ppb or less. Further, it is preferable to use a recrystallization SiC (recrystallized sintered SiC) free of impurities such as sintering aid as a substrate 1 in the resistor <br/> antipyretic heater according to the first second.

FIG. 4 and FIG. 5 is a longitudinal sectional view and a plan view showing an example of a semiconductor heating treatment apparatus according to the invention of claim 1, the semiconductor heating treatment apparatus C, in FIG. 1 The resistance heating heater A having the configuration shown is fixedly supported via a plurality of support pins 6 so that the resistance heating portion 3 is oriented along a horizontal plane, and the resistance heating heater A is provided in the carbon electrodes 4 at both ends. Pipes 5 and 5 for flowing a cooling fluid such as water are inserted therethrough, and the resistance heating section 3 is provided.
The semiconductor wafer W is horizontally held one by one by a plurality of support pins 7 which are vertically movable through a plurality of locations in the circumferential direction of the semiconductor wafer W, and the semiconductor wafer W is vertically moved by the respective support pins 7. A heating position where the wafer W is brought close to the resistance heating portion 3 in a parallel posture as shown by a solid line in FIG. 4 and an unloading position where the wafer W is separated above the resistance heating portion 3 as shown by a virtual line in FIG. It is configured to be freely displaceable.

In the semiconductor heat treatment apparatus C having the structure shown in FIGS. 4 and 5, the semiconductor wafer W is held in a horizontal position by a plurality of support pins 7. After being displaced to the position, Joule heat generated by flowing a current to the resistance heating section 3 through the carbon electrodes 4 and 4 is directed parallel to the resistance heating section 3 toward the semiconductor wafer W located close to the resistance heating section 3. By irradiating the semiconductor wafer W directly in a uniform shape, the semiconductor wafer W can be rapidly heated so as to have a uniform temperature distribution over the entire area irrespective of its size and shape.

FIGS. 6 and 7 are a vertical sectional view and a plan view showing another example of the semiconductor heat treatment apparatus according to the first aspect of the present invention.
The resistance heating heater B having the configuration shown in FIG. 3 is fixedly supported via a plurality of support pins 6 so that the spiral resistance heating section 3 forming the double helix has a posture along a horizontal plane. In addition, pipes 5 and 5 for distributing a cooling fluid such as water are disposed in the side of the innermost carbon electrode 4 and in the outermost carbon electrode 4, and the spiral resistance heating section is provided. A shaft member 8 which is formed in a tubular shape at the innermost end portion of the carbon electrode 4 located at the center of the shaft 3 and which is inserted into the tubular carbon electrode 4 so as to be vertically movable and rotatable around the vertical axis.
Holding the semiconductor wafers W one by one at the upper end of
A central portion of a disk-shaped wafer support member 9 made of iC or SiC-coated carbon is fixed, and the semiconductor wafer W is moved to the resistance heating portion 3 as shown by a solid line in FIG. It is configured so as to be freely displaceable between a heating operation position approached in a parallel posture and an extraction position separated above the resistance heating section 3 as shown by a virtual line in FIG.

In the semiconductor heat treatment apparatus D having the structure shown in FIGS. 6 and 7, the semiconductor wafer W is held in a horizontal position by the disk-shaped wafer support member 9 so that the heating action as shown by the solid line in FIG. After being displaced to the position, Joule heat generated by flowing a current to the resistance heating section 3 through the carbon electrodes 4 and 4 is directed parallel to the resistance heating section 3 toward the semiconductor wafer W located close to the resistance heating section 3. By irradiating the semiconductor wafer W directly in a uniform shape, the semiconductor wafer W can be rapidly heated so as to have a uniform temperature distribution over the entire area irrespective of its size and shape. In addition, by rotating the semiconductor wafer W via the disc-shaped wafer support member 9 during the heat treatment, a partial temperature difference in the circumferential direction can be reduced, and the temperature distribution can be made uniform in the plane. It is possible.

As an example of the semiconductor heat treatment apparatus according to the second aspect of the present invention, the resistance heating heater A in the semiconductor heat treatment apparatus C having the structure shown in FIGS.
As shown in FIG. 2, a composite formed by forming a SiC film 2 by a CVD method on the surface of a substrate 1 made of a ceramic sintered body such as SiC, MoSi, AlSi, or graphite as shown in FIG. 2 and FIG. 2 as the resistance heating portion 3 of the resistance heating heater B in the semiconductor heat treatment apparatus D having the configuration shown in FIGS.
As described above, there is a ceramic sintered body of SiC, MoSi, AlSi, or the like or a composite body obtained by forming a SiC thick film 2 on a surface of a substrate 1 made of graphite by a CVD method as it is. The other configuration of the semiconductor heat treatment apparatus is the same as that of the semiconductor heat treatment apparatus C or D shown in FIG. 4 and FIG. 5 or FIG. 6 and FIG.

FIG. 8 is a schematic longitudinal sectional view showing an example of a semiconductor heat treatment apparatus according to the fourth aspect of the present invention, and an opening 10 for loading / unloading a semiconductor wafer W from a horizontal direction on one side. In the lower part of the heat treatment space 11 having
4 and 5 are arranged using a resistance heating heater A having the configuration shown in FIG. 4 and a plurality of tungsten halogen lamps or the like are provided above the heating processing space 11. The heating lamps 12 are arranged in parallel along a horizontal plane.
A quartz window 13 for heat radiation is provided below the row, and a plurality of support pins 7 which can move up and down in the heat treatment device C. A wafer holding portion is formed at a position opposed to the row, and the plurality of support pins 7 serving as the wafer holding portion are vertically moved so that semiconductor wafers W are provided one by one over the upper end thereof. A wafer handler 14 (wafer transfer means) for transferring the semiconductor wafers W into and out of the heat treatment space 11 one by one is provided so as to be able to move into and out of the heat treatment space 11 through the opening 10. Things. A reaction gas supply pipe 15 and an exhaust pipe 16 for flowing a reaction gas for a predetermined heat treatment on the semiconductor wafer W into the heat treatment space 11 are provided on the other side and the bottom of the heat treatment space 11, respectively. It is connected.

In the heat treatment apparatus for a semiconductor having the structure shown in FIG. 8, the heat capacity of the resistance heating portion 3 is very small so that it can cope with continuous processing, and it releases impurities during the heat treatment of the semiconductor wafer W. No resistance heating heater A
And the heating lamps 12 which are easy to control, are used together, so that the resistance heating heater A continuously generates heat so as to have a constant heating value so that the inside of the heating processing space 11 is always kept at a high temperature. In addition, when the semiconductor wafer W is carried into the heat treatment space 11 via the wafer handler 14, low-temperature outside air is prevented from being brought into the heat treatment space 11, and the heating lamps 12 are one of the semiconductor wafers W. By controlling the heat generation amount according to the required heat treatment temperature, the heat treatment temperature for the semiconductor wafer W can be rapidly controlled to a predetermined temperature, and the continuous heat treatment speed of the semiconductor wafer W can be increased. Thus, productivity can be improved. In addition, heating control so that the entire semiconductor wear W has a uniform temperature is easy, and a heating process with a good product yield can be performed very efficiently.

FIG. 9 is a schematic vertical sectional view showing another example of the semiconductor heat treatment apparatus according to the fourth aspect of the present invention, and an opening for carrying in / out the semiconductor wafer W from one side in a horizontal direction. 4 and FIG. 5 at a lower portion in a heat treatment space 11 in which a wafer handler 14 which has a unit 10 and which carries in and out semiconductor wafers W one by one through the opening 10 is provided so as to be able to move in and out. A heat treatment apparatus C having a configuration in which a plurality of support pins 7 are omitted is arranged, and a window 17 such as quartz or sapphire is provided above the heat treatment apparatus C in order to separate the heater section A from the processing gas atmosphere. At the same time, a wafer support projection 18 for holding the semiconductor wafer W in a horizontal position is projected from an upper surface of the window 17, and the semiconductor wafer W is positioned on the wafer support projection 18 as the wafer handler 14. Since it is configured to be able to be transferred one by one, and the other configuration is the same as that of the semiconductor heat treatment apparatus shown in FIG. 8, the corresponding parts are denoted by the same reference numerals and detailed description thereof will be given. Is omitted.

The semiconductor heat treatment apparatus having the structure shown in FIG.
.. And the heating by the resistance heating heater A which continuously generates heat under a fixed heat generation amount and keeps the inside of the heat treatment space 11 at a high temperature state in combination. Even in the case of continuously processing different semiconductor wafers W, it is possible to easily and quickly control an appropriate heat treatment temperature for each semiconductor wafer W, and to continuously heat semiconductor wafers W having different required heat treatment temperatures. Efficiency can be improved and productivity can be improved.

In the semiconductor heat treatment apparatus having the structure shown in FIG. 8 or the semiconductor heat treatment apparatus having the structure shown in FIG. 9, the spiral resistance heating heater B shown in FIG.
When the semiconductor heat treatment apparatus D configured as shown in FIGS. 6 and 7 is installed using the method described above, the same effect as that of the semiconductor heat treatment apparatus shown in FIGS. 8 and 9 can be obtained.

[0031]

As described above, the first or the second
According to the third resistance heating heater , since the whole or surface of the resistance heating portion is formed from a ceramic film such as a SiC film formed by a CVD method, a conventional alloy using a nichrome wire or the like as the resistance heating portion is used. Compared to resistance heating heaters, the heat capacity of the resistance heating part is reduced and the amount of heat generated can be controlled at high speed, making it easy to handle continuous processing of workpieces with different heat treatment temperatures for each sheet. Sometimes the emission of impurities from the heater surface is very low, which not only prevents contamination of the workpiece,
By making the temperature distribution of the objects to be uniform, each object can be heat-treated with high quality and high accuracy without causing warpage or thermal stress defects. In addition, since there is no need to dispose a barrier between the heater and the object to prevent diffusion of impurities, there is no heat loss due to the barrier, the heat capacity of the resistance heating part is further reduced, and the above continuous processing is further improved. There is an effect that it can be executed efficiently.

According to the first and second aspects of the present invention, the heat capacity of the resistance heating portion is very small and can be used for continuous processing, and impurities are released during the heat treatment of the semiconductor wafer. By directly heating the semiconductor wafers held in a horizontal position one by one using a resistance heating heater having no temperature, the semiconductor wafers have a uniform temperature distribution over the entire area regardless of the size and shape of the semiconductor wafers.
Moreover, there is an effect that the heat treatment can be performed quickly with good reproducibility.

According to the third aspect of the present invention, in addition to the effects of the first and second aspects of the present invention, a partial temperature difference in the circumferential direction during heating of the semiconductor wafer is reduced. Thus, the heat treatment can be efficiently performed to the predetermined temperature while the temperature distribution is made uniform within the plane.

Furthermore, according to the inventions described in claims 4 and 5 , the heat capacity of the resistance heating portion is very small, so that it can cope with continuous processing, and emits impurities during the heat treatment of the semiconductor wafer. It is a combination of a resistance heating heater without heat and a large number of heating lamps that can be easily controlled locally. By continuously stabilizing the heating value of the resistance heating heater, the inside of the heat treatment space is always kept at a high temperature. Control the heating value of the heating lamp according to the required heating temperature for each semiconductor wafer while preventing low-temperature outside air from being brought into the heating processing space when carrying semiconductor wafers into the heating processing space. By doing so, it is possible to rapidly control the temperature of the heat treatment for the semiconductor wafer to a predetermined temperature, and to perform the heating control so that the entire semiconductor wear becomes a uniform temperature. Easy, an effect that it is possible to perform heat treatment of the good product yield semiconductor very efficiently.

According to the sixth aspect of the present invention, in addition to the effects of the fourth and fifth aspects of the present invention, the wafer transfer means is formed in a thin shape which simply reciprocates along a horizontal plane. Therefore, the area of the opening formed on the side of the heat treatment space can be reduced, and the heat dissipation loss from the heat treatment space can be suppressed. In addition, since the semiconductor wafer can be directly heated by approaching the resistance heating portion of the resistance heating heater, the predetermined heat treatment efficiency can be further enhanced.

[Brief description of the drawings]

1 is a plan view showing an example of a resistance heating heater according to the first.

FIG. 2 is a longitudinal sectional view of a main part for explaining a means for forming a ceramic film constituting a resistance heating part in the resistance heating heater.

3 is a plan view showing another example of the resistance heating heater according to the first.

4 is a longitudinal sectional view showing an example of a semiconductor heating treatment apparatus according to the invention described in claim 1.

FIG. 5 is a plan view of FIG. 4;

FIG. 6 is a longitudinal sectional view showing another example of the semiconductor heat treatment apparatus according to the first embodiment of the present invention.

FIG. 7 is a plan view of FIG. 6;

FIG. 8 is a schematic vertical sectional view showing an example of a semiconductor heat treatment apparatus according to the invention described in claim 4 ;

FIG. 9 is a schematic longitudinal sectional view showing another example of the semiconductor heat treatment apparatus according to the fourth aspect of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 SiC film 3 Resistance heating part 4 Carbon electrode 5 Cooling fluid distribution pipe 7 Support pin (support member) 9 Wafer support member 10 Opening 11 Heat treatment space 12 Heating lamp 14 Wafer handler (wafer transfer means) A, B Heater for resistance heating C, D Heat treatment equipment for semiconductor W Semiconductor wafer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H05B 3/14 H01L 21/22 501 H01L 21/324 H05B 3/20 328 H01L 21/205

Claims (6)

(57) [Claims] A ceramic formed by a chemical vapor deposition method.
Resistance heating section formed by shaping
A resistance heating heater having an electrode for flowing a current to the anti-heating part is fixedly supported in a position where the resistance heating part is along a horizontal plane, and a cooling fluid flows through the inside or the side of the electrode of the resistance heating heater. A heating pipe is disposed, and the semiconductor wafer is horizontally held through a support member provided vertically movably through the resistance heating portion in the horizontal position to heat the resistance heating portion. A semiconductor heat treatment apparatus characterized in that the heat treatment apparatus is configured so as to be freely displaceable between a discharge position and a take-out position. 2. A ceramic sintered body or graphite
On the surface of a substrate of predetermined shape
A resistance heating section formed by forming a silicon oxide film and the resistance heating section
A resistance heating heater provided with an electrode for passing a current through the portion , the resistance heating portion is fixedly supported in a position along the horizontal plane, and a cooling fluid distribution pipe is provided inside or on the side of the electrode of the resistance heating heater. The semiconductor wafer is held horizontally via a supporting member which is vertically movable through the resistance heating portion in the horizontal position, and a heating operation position with respect to the resistance heating portion is taken out. A heat treatment apparatus for a semiconductor, wherein the heat treatment apparatus is configured to be freely displaceable to a position. 3. A supporting member of the semiconductor wafer, the semiconductor heating treatment apparatus according to rotatably claim 1 or 2 is constructed around a vertical axis which is formed in the center of it. 4. A heat treatment space having an opening at a side portion for carrying a semiconductor wafer in and out from a horizontal direction is provided below the heat treatment space .
Ceramic film formed by chemical vapor deposition
A current flows through the resistance heating part and the resistance heating part
A resistance heating heater having an electrode and a heater is fixedly arranged with its resistance heating portion oriented along a horizontal plane, and a plurality of heating lamps are arranged in parallel above the heating processing space along the horizontal plane. And a wafer holding unit for horizontally holding a semiconductor wafer at a position facing the resistance heating unit in a horizontal position in the resistance heating heater and the plurality of heating lamps in the heating processing space, A semiconductor heat treatment apparatus, wherein a wafer transfer means for carrying in and out semiconductor wafers one by one through the opening is provided in the wafer holding unit. 5. A side in the lower part of the heat treatment space with an opening for loading and unloading the semiconductor wafer from the horizontal direction, Se
Predetermined shape made of Lamix sintered body or graphite
Of silicon carbide film by chemical vapor deposition on the surface of a substrate
Resistance heating part and the electrode for passing current through this resistance heating part
A resistance heating heater having a fixed position with its resistance heating portion oriented along a horizontal plane, and a plurality of heating lamps arranged in parallel along the horizontal plane at the top of the heat treatment space. And a wafer holding unit for holding the semiconductor wafer horizontally at a position facing the resistance heating unit in the horizontal position in the resistance heating heater and the plurality of heating lamps in the heating processing space; A semiconductor wafer heating means for transferring semiconductor wafers one by one through the opening to the semiconductor wafer. 6. The wafer holding unit vertically moves through the resistance heating unit in the horizontal position in order to transfer the semiconductor wafer held in the horizontal position by the holding unit to the wafer transfer means. The heat treatment apparatus for semiconductor according to claim 4 or 5 , wherein the heat treatment apparatus is configured to be capable of being used.