JP2966025B2 - Vapor phase growth equipment - Google Patents

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial application field) The present invention relates to a vapor phase growth apparatus used for manufacturing, for example, a compound semiconductor having a hetero structure.

(Prior Art) A conventional vapor phase growth apparatus for producing a compound semiconductor by vapor phase growing a compound semiconductor film on a crystal substrate is, for example, a ninth type.
It is configured as shown in the figure.

As shown in this figure, the conventional vapor phase growth apparatus includes a reaction furnace 101 fixed in an airtight state on a base plate 100,
A susceptor 103 on which the crystal substrate 102 is placed, a rotating shaft 104 for detachably supporting the susceptor 103, and a heater 105 for heating the crystal substrate 102 and the susceptor 103 are provided.

The upper part of the reactor 101 is formed with an inlet 101a for supplying a gas (a raw material gas, a carrier gas, etc.), and the lower part of the reactor 101
An exhaust port 101b for discharging unreacted gas in 101 is formed. The rotating shaft 104 is rotatably supported in a hermetically sealed state by a vacuum seal bearing 106 (for example, a magnet coupling type bearing) through the base plate 100. A pulley 107 is connected to a lower portion of the rotating shaft 104,
A motor 110 is connected to the pulley 107 via a belt 108 and a pulley 109. The heater 105 includes the susceptor 103
And around the rotating shaft 104.

The conventional vapor phase growth apparatus is configured as described above,
The crystal substrate 102 placed on the susceptor 103 is heated to a predetermined temperature by heating of the heater 105, and a raw material gas (for example, AsH ₃ , PH ₃ or the like) is supplied into the reaction furnace 101 from the air supply port 101a by a carrier gas ( For example, H ₂ or the like is supplied, and a compound semiconductor film is vapor-phase grown on the crystal substrate 102. At this time, the motor
The susceptor 103 is rotated by driving the 110 to transmit rotational power to the pulley 107 and the rotating shaft 104 connected via the pulley 109 and the belt 108. Then, the residual gas in the reaction furnace 101 is exhausted from the exhaust port 101b by a rotary pump (not shown).

By the way, in the above-described vapor phase growth apparatus, the thickness of the compound semiconductor film obtained by vapor phase growth is required to be highly uniform in order to obtain a semiconductor having uniform performance. The uniformity of the crystal film largely depends on the temperature distribution of the crystal substrate during vapor phase growth, and achieving uniformity of the temperature distribution of the crystal substrate is indispensable for obtaining a crystal film with good uniformity. It is one of the conditions.

However, in the above-mentioned conventional vapor phase growth apparatus, the susceptor 103 on which the crystal substrate 102 is mounted is supported at the center by the rotating shaft 104, so that the heater 105 for heating the susceptor 103 is provided below the susceptor 103. It is arranged around the rotation shaft 104. For this reason, it has been difficult to equalize the temperature distribution between the peripheral portion of the susceptor 103 and the central portion supported by the rotating shaft 104.

When the susceptor 103 is rotated at a high speed (1000 rpm or more) in order to improve the flow of the raw material gas supplied into the reaction furnace 101, the susceptor 103 is disposed below the susceptor 103 in order to obtain a uniform temperature distribution. When the diameter of the rotating shaft 104 is reduced by increasing the area occupied by the heater 105, the rotating shaft 1
The natural frequency of 04 becomes lower and falls within the range of rotation speed during operation (during vapor phase growth). Therefore, during operation (during vapor phase growth)
When the crystal substrate 102 mounted on the susceptor 103 moves, or the crystal substrate 102 is easily broken, such as gallium arsenide (GaAs), the susceptor 103 may be damaged. In the case of the vapor phase growth apparatus having the susceptor 103, there is a possibility that rotational performance may be impaired due to insufficient rigidity at the time of rotation 104 or the like.

In the above-described conventional vapor phase growth apparatus, the rotating shaft 104
Since the heater 105 is disposed around the upper part of the rotating shaft 104, the temperature of the rotating shaft 104 also increases due to radiation and heat transfer, and the rotating shaft 104
The temperature of the bearing of the vacuum seal bearing 106 that drives the rotation of the 04 also rises due to the transfer of heat. Vacuum seal bearing 10
When the temperature of the bearing 6 rises, poor rotation tends to occur due to poor lubrication of the lubricating oil of the bearing, and the smooth rotation performance of the rotating shaft 104 cannot be obtained, and a crystal film having a uniform thickness cannot be obtained.

Further, the thickness and quality of the compound semiconductor film obtained by vapor phase growth often depend on the growth temperature. Therefore,
It is necessary to accurately measure the temperature during heating of the susceptor 103 on which the crystal substrate 102 is mounted and control the temperature.

(Problems to be Solved by the Invention) As described above, the conventional susceptor 10
3 cannot be heated uniformly, and rotation failure occurs due to the influence of the heat of the bearing of the rotating shaft 104, and the susceptor
Since the temperature measurement during heating of 103 could not be performed accurately, it was difficult to obtain a crystal film having a uniform thickness.

The present invention has been made for the purpose of solving the above-mentioned problems, and has a uniform temperature distribution of the susceptor heated by the heating means, and also has a rotating shaft that rotates smoothly, and further, accurately measures the temperature of the susceptor to be heated. Accordingly, it is an object of the present invention to provide a vapor phase growth apparatus capable of obtaining a crystal film with good uniformity.

[Constitution of the Invention] (Means for Solving the Problems) In order to solve the above problems, the present invention provides a susceptor for placing a substrate, which is disposed in a reaction furnace to which a raw material gas is supplied, and the susceptor A rotating shaft for rotatably supporting the rotating shaft, a driving unit for rotationally driving the rotating shaft, and a heating unit for heating the susceptor, wherein the heating unit comprises: The drive unit is disposed in a space formed inside at least one of the susceptor and the rotating shaft, and the driving unit transmits a rotational driving force to the rotating shaft in a non-contact manner so as to rotate the rotating shaft in an airtight state. A coupling means for the

The present invention also provides a susceptor disposed in a reactor to which a source gas is supplied, for mounting a substrate, a rotating shaft for rotatably supporting the susceptor, and a rotating shaft for rotating the rotating shaft. And a heating means for heating the susceptor, wherein the heating means is disposed in a space formed inside at least one of the susceptor and the rotating shaft. In addition, a cooling means for cooling the rotating shaft is provided.

The present invention also provides the vapor phase growth apparatus, wherein the rotation shaft is formed in a cylindrical shape, and a hollow support shaft for supporting the heating unit is disposed therein, and the rotation shaft is provided in the support shaft. An electrode connected to the heating means is provided, and a cooling medium for cooling the electrode can be supplied into the support shaft.

Further, in the present invention, in the vapor-phase growth apparatus, a portion of the rotation shaft located above the driving unit is configured to be divided into at least two in the axial direction, and a contact portion between the divided surfaces is defined by the rotation shaft. It is characterized in that the thermal conductivity is smaller than that of the undivided portion.

Further, the present invention is characterized in that a reflector is provided at a position on the opposite side of the susceptor of the heating means.

Further, according to the present invention, a thermocouple for measuring a heating temperature of the susceptor is disposed in a space formed inside at least one of the susceptor and the rotating shaft, and a tip side of the thermocouple is inserted into the susceptor. It is characterized in that an insertion portion is formed.

Further, the present invention is characterized in that a flow path through which a purge gas flows is formed around the thermocouple.

(Action) According to the present invention, the entire susceptor can be uniformly heated by disposing the heating means in the space formed in at least one of the susceptor and the rotating shaft.
A uniform crystal film can be obtained.

Also, by suppressing the temperature rise of the rotating shaft during susceptor heating, the temperature rise of the bearing of the rotating shaft can be suppressed,
Since smooth high-speed rotation is possible, a crystal film having a uniform thickness can be obtained.

In addition, since the heating temperature of the susceptor can be accurately measured without being affected by the heating means, the heating temperature of the susceptor can be accurately adjusted to the reaction temperature of the source gas, and a high-quality crystal film can be obtained. Can be.

(Examples) Hereinafter, the present invention will be described in detail based on illustrated examples.

FIG. 1 is a sectional view showing a vapor phase growth apparatus according to a first embodiment of the present invention. As shown in this figure, a disk-shaped susceptor 4 on which a crystal substrate 3 is placed and a cylindrical susceptor 4 for detachably supporting the susceptor 4 are provided in a reaction furnace 2 fixed in an airtight manner on a base plate 1. A rotary heater 5 and a spiral heater 6 for heating the crystal substrate 3 and the susceptor 4 are provided.

The upper part of the reaction furnace 2 is formed with an air supply port 2a for supplying a gas (a raw material gas, a carrier gas, etc.), and the lower part of the reaction furnace 2 is formed.
An exhaust port 2b for discharging the unreacted gas inside is formed.

The upper region 5a of the rotating shaft 5 supporting the susceptor 4 is formed in a cylindrical shape having substantially the same diameter as the susceptor 4, and the lower side of the rotating shaft 5 penetrating the base plate 1 is fixed to the base plate 1. It is rotatably supported by ball bearings 9a and 9b of a vacuum seal bearing 8 provided between the flanges 7. Susceptor 4
A heater 6 supported by a hollow support shaft 11 is provided in a space 10 formed between the rotary shaft 5 and the upper part 5a of the rotary shaft 5. The support shaft 11 is fitted to the fixed flange 7, and a pair of electrodes 12 a and 12 b connected to the heater 6 are provided inside the support shaft 11, and penetrate to the outside via an insulating hermetic seal 21 at the lower end. ing.

The vacuum seal bearing 8 includes a bearing housing 13 having an upper portion fixed to the base plate 1 and a lower portion fixed to the fixed flange 7 and disposed on the outer periphery of the rotating shaft 5, and a rotating shaft 5 provided on the inner peripheral side of the bearing housing 13. Ball bearing 9 that rotatably supports
a, 9b, a plurality of magnetic coupling driven rings 14 fixed to the rotating shaft 5, and ball bearings 15a,
The hermetic bearing is composed of a pulley 16 rotatably provided via a shaft 15b and a magnetic coupling rotating ring 17 provided inside the pulley 16 so as to face the magnetic coupling driven ring 14. Opposing magnetic coupling driven ring 14
The magnetic coupling rotating ring 17 is arranged so that an attractive force acts by mutual magnetic force. A motor 20 is connected to the pulley 16 via a belt 18 and a pulley 19.
The drive of the motor 20 causes the pulley 16 and the magnetic coupling rotating ring 17 to rotate through the pulley 19 and the belt 18, and the magnetic coupling driven ring 14 and the rotating shaft 5 rotate integrally by the magnetic force of the magnetic coupling rotating ring 17. I do.

FIG. 2 is an enlarged sectional view showing the support shaft 11. As shown in FIG. In this figure, the vacuum seal bearing 8 arranged between the base plate 1 and the fixed flange 7 is omitted. In the support shaft 11, an upper end plug 22 and an airtight plug 23 are disposed at an upper portion, and an airtight plug 24 and a lower end plug 25 are disposed at a lower portion. An insulator 26 is provided between the airtight plugs 23 and 24. Tubes 28a and 28b, through which the electrodes 12a and 12b covered with are provided with a gap 27 inside, are fitted. The upper end plug 22 is formed of a heat-resistant insulating material. Under the lower end plug 25, a holding plate 30 with an insulating tube 29 interposed is provided with bolts 31a, 31.
b, and provided between the lower end plug 25 and the insulating tube 29.
In the ring 32, the lower portions of the electrodes 12a and 12b
9. The holding plate 30 is inserted in an airtight state.

Conductor members 34a, 34b fixed by screws 33a, 33b are provided between the upper portions of the electrodes 12a, 12b and the heater 6, and the electrodes 12a, 12b
The heater 6 is energized via the conductor members 34a and 34b.

A cooling chamber 35 into which cooling water is injected is provided between the airtight stoppers 23 and 24.
Further, a purge gas chamber 36 to which a purge gas is supplied is formed between the hermetic plug 24 and the lower end plug 25. The purge gas chamber 36 communicates with the space 10 in which the heater 6 is provided through a gap 27 between the electrodes 12a and 12b and the tubes 28a and 28b. A water supply pipe 37 communicating with the cooling chamber 35 and a purge gas supply pipe 38 communicating with the purge gas chamber 36 are provided on the outer peripheral surface of the support shaft 11, and a discharge pipe 39 is provided at a substantially central portion of the cooling chamber 35. The drain pipe 39 is fitted to the airtight plug 24, the lower end plug 25, and the holding plate 30.

The above-mentioned support shaft 11, upper end plug 22, lower end plug 25, airtight plug 23, 2
4. The respective joints of the pipes 27a, 27b and the drain pipe 39 are joined by hermetic welding, and the lower portions of the electrodes 12a, 12b and the lower end plug 25 are joined in an insulated state in an airtight manner.

Next, the operation of the vapor phase growth apparatus according to the present invention will be described. The heater 6 is energized from a power source (not shown) connected to the lower part of the electrodes 12a and 12b through the electrodes 12a and 12b and the conductor members 34a and 34b, and heats the inside of the reaction furnace 2 to remove the crystal substrate 3 placed on the susceptor 4. Raise the temperature to a predetermined temperature. Then, a purge gas (for example, H ₂ ) is supplied from a purge gas supply pipe 38 to the space 10 in which the heater 6 is disposed through the purge gas chamber 36 and the gap 27, and the raw material gas (eg, H ₂ ) is supplied into the reaction furnace 2 from the air supply port 2a. For example, AsH ₃ , PH _{3 and the} like are supplied together with a carrier gas (eg, H ₂ ) to form a compound semiconductor film on the crystal substrate 3 by vapor phase growth. At this time, the motor 20 is driven to drive the pulley 16 connected to the pulley 19 and the belt 18.
The rotating power is transmitted to and rotated. When the pulley 16 rotates, the magnetic coupling rotating ring 17 provided inside the pulley 16 rotates, and further, the magnetic coupling driven ring 14 provided on the rotating shaft 5 rotates integrally with the attraction force of the magnetic force to rotate the susceptor. . Then, the residual gas in the reactor 2 is exhausted.
Air is exhausted from 2b by a rotary pump (not shown).

In addition, by supplying cooling water from the water supply pipe 37 to the cooling chamber 35 in the support shaft 11 and discharging and circulating the cooling water from the drain pipe 39, the electrodes 12a,
The 12b can be efficiently cooled by conduction through the purge gas flowing into the space 10.

Further, in the above-described embodiment, the electrodes 12a and 12b and the tubes 28a and 28b
The purge gas was supplied to the space 10 in which the heater 6 was disposed through the gap 27 provided between the electrodes 12a and 12b and the tubes 28a and 28b as shown in FIGS. 3 (a) and 3 (b). O-rings 40a and 40b are attached below the gap 27 to seal the gap 27. Then, a purge gas introduction pipe 41 is provided so as to communicate with the purge gas chamber 36 and the space 10 in which the heater 6 is disposed, and the purge gas is supplied through the pipe 41 to the space 10 in which the heater 6 is disposed.
The gap 27 sealed by the rings 40a and 40b may be filled with fluorine-based oil.

Further, as shown in FIGS. 4A and 4B, the electrodes 12a,
The tubes 28a and 28b provided on the outer periphery of 12b are removed, and insulating hermetic seals 42a and 42b are attached between the electrodes 12a and 12b and the hermetic plugs 23 and 24.
Then, a purge gas introduction pipe 43 may be provided so as to communicate with the purge gas chamber 36 and the space 10 in which the heater 6 is provided, and the purge gas may be supplied to the space 10 in which the heater 6 is provided through the pipe 43. In the above-described embodiment, a heater is used as the heating means, but lamp heating may be used. In addition to the magnetic coupling, the vacuum seal bearing may have a magnetic fluid seal or a seal structure made of a synthetic resin or the like. . It is also possible to provide a plurality of vacuum seal bearings. The heating means may be provided in at least one of the susceptor 4 and the rotating shaft 5.

5 and 6 are sectional views showing a vapor phase growth apparatus according to a second embodiment of the present invention.

In this embodiment, a disc-shaped reflecting plate 50 made of molybdenum or the like is mounted on the upper portion of the support shaft 11 so as to be located between the heater 6 and the conductor members 34a and 34b below the heater 6. The rotating shaft 5 is divided into an upper part 5a, an intermediate part 5b, and a lower part 5c. The upper part 5a supporting the susceptor 4 is formed in a cylindrical shape having substantially the same diameter as the susceptor 4, and penetrates through the base plate 1. A lower portion 5c having a smaller diameter than the upper portion 5a is rotatably supported by ball bearings 9a and 9b of a vacuum seal bearing 8 provided between the base plate 1 and the fixed flange 7. Upper part 5 of rotating shaft 5
The lower part 5c is connected to the lower part 5c by an intermediate part 5b located below the heater 6.

The upper part 5a and the middle part 5b of the rotating shaft 5, the lower part 5c and the middle part 5b
As shown in FIG. 6, they are joined by screws 52 with small-diameter spacers 51 made of molybdenum or the like interposed therebetween, so that the mutual contact area to be joined is reduced.

Other configurations (such as the configuration inside the support shaft 11 and the configuration of the vacuum seal bearing 8 that rotationally drives the rotary shaft 5) and the operation are as described in the first embodiment.
This is the same as the first embodiment shown in FIGS.

As described above, in the present embodiment, since the reflecting plate 50 is provided at a position opposite to the susceptor 4 of the heater 6, heat radiated from the heater 6 downward (toward the rotating shaft 5) is reflected. Is reflected upward (on the susceptor 4 side), so that the heating of the rotating shaft 5 is reduced. Also, the rotating shaft 5 is divided into an upper part 5a, an intermediate part 5b, and a lower part 5c, and the rotating shaft 5 is heated by the heater 6 because the spacers 51 are interposed so as to reduce the contact area of each joint surface. Even so, heat transfer is reduced at each joint surface.

Therefore, the ball bearing of the vacuum seal bearing 8 that drives the rotation of the rotation shaft 5 by suppressing the temperature rise of the rotation shaft 5
Since the temperature rise due to the heat conduction of 9a, 9b is also suppressed, poor lubrication of the lubricating oil of the ball bearings 9a, 9b is prevented, and lubricating rotation performance of the rotating shaft 5 is obtained.

In the present embodiment, the rotary shaft 5 is divided into three parts and joined, but may be divided into two parts or four or more parts and joined.
Further, the spacer 51 interposed between the joining surfaces may be formed of a member having a low thermal conductivity, for example, other than molybdenum.

FIG. 7 is a sectional view showing a vapor phase growth apparatus according to a third embodiment of the present invention.

In this embodiment, an annular cooling cylinder 70 in which a cooling water passage 70a is formed so as to surround the outer periphery of the rotating shaft 5 is disposed above the bearing housing 13 of the vacuum seal bearing 8. A supply pipe and a discharge pipe (not shown) for supplying and discharging the cooling water to and from the cooling water channel 70a are attached to a lower portion of the cooling cylinder 70, and the cooling water is circulated in the cooling water channel 70a.

Further, a hard gas (for example, H ₂ ) is supplied to the inside of the rotary shaft 5, the vacuum seal bearing 8, and the support shaft 11 from a lower portion thereof through a purge gas supply port (not shown).

Other configurations (such as the configuration inside the support shaft 11 and the configuration of the vacuum seal bearing 8 that rotationally drives the rotary shaft 5) and the operation are as described in the first embodiment.
This is the same as the first embodiment shown in FIGS.

As described above, in the present embodiment, when the susceptor 4 is heated by the heater 6, even if the rotating shaft 5 is heated by radiation or heat transfer, the rotating shaft 5 is cooled by the cooling cylinder 70 provided outside the rotating shaft 5. And a space 71 between the rotating shaft 5 and the cooling cylinder 70.
The rotating shaft 5 is also cooled by the purge gas (for example, H ₂ ) flowing from below, so that the temperature rise of the rotating shaft 5 can be suppressed.

As described above, since the temperature of the rotary shaft 5 is suppressed by the temperature rise, the temperature increase due to the heat conduction of the ball bearings 9a and 9b of the vacuum seal bearing 8 that rotationally drives the rotary shaft 5 is also suppressed. Insufficient lubrication of the lubricating oil is prevented, and the rotating shaft 5
Smooth rotation performance can be obtained.

In this embodiment, the cooling cylinder 70 for cooling the rotating shaft 5 is provided on the upper part of the bearing housing 13. However, the cooling cylinder 70 may be provided on the base plate 1, for example. Fins may be provided on the outer periphery in the diameter direction.

FIG. 8 is a sectional view of a vapor phase growth apparatus according to a fourth embodiment of the present invention.

In this embodiment, an insulator 60 is fitted over the support shaft 11, and the electrodes 12a and 12b connected to the conductor members 34a and 34b supporting the susceptor 6 are inserted into the insulator 60. I have. A thermocouple 61 for measuring the heating temperature of the susceptor 4 is inserted through the center of the insulator 60, and the distal end side (temperature measuring section) of the thermocouple 61 passes through a hole 6 a formed in the heater 6. 4 is disposed in an insertion portion 4a formed in the same. Since the insertion portion 4a formed in the susceptor 4 is located in the hole 6a formed in the heater 6, the thermocouple 61
In addition, an appropriate gap is formed between the insertion portion 4a and the thermocouple 61 so that the thermocouple 61 does not contact the insertion portion 4 when the susceptor 4 rotates.

In the space 10 in which the heater 6 is arranged, the electrode 12 of the insulator 60 is provided.
A purge gas (for example, H ₂ ) is introduced through holes 60a, 60b, and 60c into which the thermocouples a and 12b are inserted, respectively. The lower part of the protection cylinder 62 is fixed to the hole 60c of the insulator 60, and a flow path 63 through which a purge gas flows along the periphery of the thermocouple 61 is formed between the thermocouple 61 and the protection cylinder 62.

Other configurations (such as the configuration inside the support shaft 11 and the configuration of the vacuum seal bearing 8 that rotationally drives the rotary shaft 5) and the operation are as described in the first embodiment.
This is the same as the first embodiment shown in FIGS.

As described above, in the present embodiment, since the distal end side (temperature measuring section) of the thermocouple 61 is disposed in the insertion section 4a formed in the susceptor 4, the influence of the radiant heat of the heater 6 is reduced, and the susceptor 4 The heating temperature can be measured accurately.

Further, when the purge gas flows through the flow channel 63 formed around the thermocouple 61, even when the source gas flows into the rotary shaft 5 due to pressure fluctuations in the reaction furnace 2 or the like, the source gas is connected to the thermocouple 61. Since there is no direct contact, corrosion of the covering material of the thermocouple 61 can be prevented. Therefore, thermocouple
Since a small amount of leak does not occur due to corrosion of the coating material of No. 61, a small amount of oxygen (air) does not flow into the reaction furnace 2 and a good quality crystal film can be obtained.

Further, the thermocouple 61 includes the insertion portion 4a of the susceptor 4 and the protection cylinder 62.
Since it is arranged in the inside, it is less likely to receive the radiant heat of the heater 6 directly, and it is possible to prevent the coating material of the thermocouple 61 from being deteriorated by heat.

[Effects of the Invention] As described above, according to the present invention, according to the present invention, the heating means for heating the crystal substrate mounted on the susceptor includes a susceptor and a rotating shaft for supporting the susceptor. Since the entire surface of the susceptor can be uniformly heated by providing the susceptor in the formed space, the temperature distribution of the crystal substrate becomes uniform, and a crystal film with good uniformity can be obtained.

Further, by disposing the heating means inside the rotating shaft, it is possible to increase the diameter of the rotating shaft and increase the rigidity. Therefore, since the natural frequency of the rotating shaft can be increased,
During operation (at the time of vapor phase growth), generation of vibration due to resonance in the susceptor is prevented, and the crystal substrate can be stably mounted on the susceptor.

Further, according to the present invention according to claims 4, 5, and 6, it is possible to suppress an increase in the temperature of the rotating shaft that rotatably supports the susceptor when the susceptor is heated. Therefore, poor lubrication of the bearing lubricating oil is prevented, so that smooth high-speed rotation is possible and a crystal film having a uniform thickness can be obtained.

Further, according to the present invention, since the heating temperature of the susceptor can be accurately measured, the heating temperature of the susceptor can be accurately adjusted to the reaction temperature of the raw material gas. A membrane can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a vapor phase growth apparatus according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view showing a support shaft of the vapor phase growth apparatus, and FIGS. ) And FIGS. 4 (a), (b)
Is a cross-sectional view showing a support shaft of a vapor phase growth apparatus according to another embodiment of the present invention, FIG. 5 is a cross-sectional view showing a vapor phase growth apparatus according to a second embodiment of the present invention, and FIG. FIG. 7 is an enlarged sectional view showing a main part of the vapor phase growth apparatus, and FIG.
FIG. 8 is a cross-sectional view showing a vapor phase growth apparatus according to an embodiment, FIG. 8 is an enlarged cross-sectional view showing a main part of a vapor phase growth apparatus according to a fourth embodiment of the present invention, and FIG. It is sectional drawing which shows an apparatus. DESCRIPTION OF SYMBOLS 1 ... Base plate 2, ... Reactor 3 ... Crystal substrate 4, ... Susceptor 4a ... Insertion part, 5 ... Rotary shaft 5a ... Upper part, 5b ... Middle part 5c ... Lower part, 6 ... Heater 8 ... vacuum seal bearing, 10 ... space 11 ... support shaft, 12a, 12b ... electrode 14 ... magnetic coupling driven ring 16 ... pulley 17 ... magnetic coupling rotating ring 20 ... motor, 22 ... … Top plug 23,24 …… Airtight plug, 25… Bottom plug 27 …… Gap, 28a, 28b …… Pipe 39 …… Drain pipe, 50 …… Reflection plate 61 …… Thermocouple, 62 …… Protective cylinder 63 …… Flow path, 70 …… Cooling cylinder

Continuation of the front page (56) References JP-A-60-245776 (JP, A) JP-A-2-68924 (JP, A) JP-A-2-184020 (JP, A) JP-B-43-25373 (JP) , B1) (58) Field surveyed (Int. Cl. ⁶ , DB name) H01L 21/205 H01L 21/365 H01L 21/31

Claims (7)

(57) [Claims] 1. A susceptor disposed in a reactor to which a source gas is supplied for mounting a substrate, a rotating shaft for rotatably supporting the susceptor, and a rotating shaft for rotating the rotating shaft. In a vapor phase growth apparatus provided with a driving unit and a heating unit for heating the susceptor, the heating unit is disposed in a space formed inside at least one of the susceptor and the rotating shaft, and the susceptor And while the rotating shaft is stationary when rotating, the driving means has a coupling means for transmitting a rotational driving force to the rotating shaft in a non-contact manner so as to rotate the rotating shaft in an airtight state. A vapor phase growth apparatus. 2. A susceptor arranged in a reaction furnace to which a source gas is supplied for mounting a substrate, a rotating shaft for rotatably supporting the susceptor, and a rotating shaft for rotating the rotating shaft. In a vapor phase growth apparatus provided with a driving unit and a heating unit for heating the susceptor, the heating unit is disposed in a space formed inside at least one of the susceptor and the rotating shaft, and the susceptor A vapor phase growth apparatus which is stationary when the rotating shaft is rotated, and is provided with cooling means for cooling the inside of the rotating shaft. 3. The rotary shaft is formed in a cylindrical shape, and a hollow support shaft for supporting the heating means is provided therein, and an electrode connected to the heating means is provided in the support shaft. The vapor phase growth apparatus according to claim 1, wherein a cooling medium for cooling the electrode is provided in the support shaft, the cooling medium being provided. 4. A portion of the rotating shaft located above the driving means is divided into at least two parts in the axial direction,
3. The vapor phase growth according to claim 1, wherein the contact portion between the divided surfaces has a lower thermal conductivity than that of the undivided portion of the rotating shaft. apparatus. 5. A reflection plate is provided at a position opposite to the susceptor of the heating means.
Alternatively, the vapor phase growth apparatus according to claim 2. 6. A thermocouple for measuring a heating temperature of the susceptor is disposed in a space formed inside at least one of the susceptor and the rotating shaft, and a tip end of the thermocouple is inserted into the susceptor. The vapor phase growth apparatus according to claim 1, wherein a portion is formed. 7. The vapor phase growth apparatus according to claim 6, wherein a flow path through which a purge gas flows is formed around the thermocouple.