JP2965040B2 - Energy beam processing method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method and an apparatus for processing an energy beam. In particular, in the case of repairing (cutting or connecting) an LSI, it is possible to provide a simple position information instruction. The present invention relates to an energy beam processing method and apparatus capable of automatically inputting position information suitable for storing, searching, and moving a predetermined position.

[Conventional technology]

Semiconductor integrated circuits (LSIs) are being miniaturized and highly integrated in order to achieve higher performance and higher speed. However, this has made LSI development more difficult, and the development period has been prolonged. Has been invited. Under these circumstances, a prototype was
An LSI in which a defective part on an LSI chip is specified, the wiring existing in the part is cut, or the wiring is formed in an arbitrary part and the defective wiring is repaired.
If it is manufactured, subsequent characteristic evaluation and design change can be performed quickly.

Conventional techniques for repairing LSIs include, for example, X-Ended Abstracts of the Seventeens Conference on Solid-State Devices and Materials, Tokyo, 1985, 193rd.
Page to page 196 (Extended Abstracts of the 17th Conf
erence on Solid state Devices and Materials, Tokyo,
1985, pp. 193 to 196) discusses a method of connecting arbitrary points described in the literature. To this end, Mo (CO) ₆ vapor is introduced into an LSI chip placed on an XY stage, a Mo film is deposited by a photochemical reaction by laser beam irradiation, and Mo wiring is moved by moving the XY stage. A laser CVD (Chemical Vapor Deposition) technique for forming a layer is shown.

Further, for example, Japanese Patent Application Laid-Open No.
A technique of filling a through hole with a conductive material using the D technique is shown.

If under the protective film or multilayer wiring is formed,
By opening a window in the interlayer insulating film, burying a conductive material in a hole (a window opening portion) using the laser CVD technique, and then forming a wiring, an arbitrary portion can be connected.

However, with the miniaturization and multilayering of wiring in LSI chips,
The window opening required for connection must be miniaturized and have a high aspect ratio. For this reason, especially when embedding a conductive material in the window opening, it is necessary to precisely align the window opening and the laser beam irradiation position, and thus it is essential to increase the positioning accuracy.

As a prior art related to positioning, for example, Japanese Patent Application Laid-Open
As disclosed in -90955, an auto aligner used when manufacturing an LSI is known.

[Problems to be solved by the invention]

The above-mentioned conventional technology (aligner technology) includes a process of exposing a circuit pattern in an LSI manufacturing process, in which an alignment mark (alignment mark) on a wafer or chip mounted on an XY stage and a mask of a circuit pattern to be transferred. By adjusting until the positional deviation from the pattern becomes zero, the wafer or chip and the circuit pattern are adjusted to a desired positional relationship.

The alignment procedure is as follows. First, since the approximate position of the alignment mark on the wafer or chip is known from the design data, the XY stage is moved based on this position information so that the center of the alignment mark is easily detected. (Referred to as coarse alignment or pre-alignment). next,
The center of the alignment mark is optically captured, the shift amount is accurately detected by means such as image processing, and the XY stage is finely adjusted so that the shift becomes zero (referred to as fine alignment).

As described above, the aligner technology is effective in detecting the position of an alignment mark whose approximate position is known with high precision in the LSI manufacturing process, but when repairing an arbitrary portion of a completed chip, The following disadvantages occur.
That is, since the correction location is an arbitrary location on the chip, it is not immediately known where this location is actually. Of course, if the position data of the repaired portion where to be repaired is obtained from the LSI design data, the XY stage is moved to the repair position directly according to the position data in the design data, or There is no problem with the method of detecting the alignment mark by the aligner technique and moving the XY stage to the repair position based on the positional relationship between the alignment mark and the repair location (known from the design data). However, in many cases of repairs, the operator easily writes in the layout diagram of the on-chip wiring or marks the points that are easy to cut and easy to connect on the defective wiring, The location is specified. That is, the position is not specified in the design data. Therefore, it is not immediately known where the location specified on the layout diagram or the photograph is on the actual chip and how to move the XY stage. After all, moving the XY stage with the intuition of the worker, comparing the photograph of the optical microscope showing the repaired part with the image on the chip,
Conventionally, an operation of moving the XY stage by trial and error so as to match them and inputting repair position data has been necessary. However, such a method of inputting position data is not only complicated and time-consuming, but also there is a possibility that a repaired part may be mistaken.
However, there is a problem in that the position data is delayed, and it has been a problem to input the position data accurately by a simple method.

SUMMARY OF THE INVENTION An object of the present invention is to provide an energy beam processing method and apparatus capable of easily and accurately inputting position data of a repaired part.

[Means for solving the problem]

The above purpose is based on a predetermined point on the layout drawing or optical microscope photograph (hereinafter, both figures are referred to as "drawings") showing the repaired part and the corresponding one point on the LSI chip as a reference point. Combine the figure with the LSI chip method,
Indicate the reference point and repair location on the diagram, read the position information of each, and then calculate the distance between the reference point on the diagram and the designated repair location using the magnification in the diagram, the actual distance on the LSI chip. This is achieved by searching the vicinity of a position that is separated from the reference point on the LSI chip by this actual distance by a monitor device to specify a repaired portion on the LSI chip, and inputting the position information.

[Action]

In the above configuration, the distance between the reference point on the figure and the repaired part is converted into the actual distance on the LSI chip by the calculating means using the magnification of the figure. Should be the repair location on the LSI chip. However, in practice, various errors are accumulated, causing a shift. Therefore, while displaying the above location on the screen of the monitor device, while looking at the image on the LSI chip, finely adjusting the position of the LSI chip by the drive device, searching for the final repair location on the LSI chip, The position information is taken in by the reading means.

By doing so, the position information of the repaired portion can be easily input.

It should be noted that, in addition to the above method, a repair location to be searched on the LSI chip can be obtained using a computer, a CRT, a digitizer, or the like.

By irradiating the repair location specified as described above with an energy beam, energy beam processing can be performed at an accurate position.

Note that the energy beam is composed of a laser beam, an ion beam, an electron beam, or the like, and is formed on a sample by CVD or is subjected to sputtering.

〔Example〕

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 5 by taking a case of repairing wiring of an LSI as an example.

FIG. 1 is a block diagram of an example of a position information input device according to the present invention, FIG. 2 is a flowchart showing a processing procedure executed by an arithmetic processing unit in FIG. 1, and FIG. 3 is a monitor in FIG. Example of LSI chip screen displayed on the device, FIG. 4 is a configuration diagram of an LSI wiring forming apparatus to which the position information input device shown in FIG. 1 is applied, and FIG. 5 is position information according to the embodiment of the present invention. 3 is a configuration diagram of the input device of FIG.

First, the configuration and operation of an example of the position information input device according to the present invention will be described with reference to FIGS. In FIG. 1, reference numeral 1 denotes a table in which stress sensors 2 arranged in a matrix are embedded. Layout diagram 3 to be entered on table 1 (for example, layout diagram of LSI)
And an XY stage 49 connected to the drive device 12.
An LSI chip 48 is placed on each of them. At this time,
The X and Y directions of the layout diagram 3 and the X and Y directions of the LSI chip 48 are matched. Then, the XY stage 49 is driven by operating the direction indicating switch 11 connected to the driving device 12 in advance on a point on the LSI chip 48 corresponding to the reference point 0 on the layout diagram 3. Through an optical system including the objective lens 60 set to a predetermined magnification by the optical system magnification switch 9 and the imaging device 13,
Align with the center C of the monitor device 14. Next, the point O on the layout diagram 3 is directly designated by the pointer 4 and the point designation switch 5 is pressed to instruct the arithmetic processing unit 10 that the point is a reference point. In this case, the stress sensor 2 and the point designation switch 5 for the reference point are connected to the decoder 7, and the decoder 7 detects that the stress sensor 2 corresponding to the position currently pressed by the pointer 4 is pressed. At the same time, by recognizing that the point designation switch 5 has been pressed, it is determined that the point O is on the layout diagram 3 and the data of the point O is set in the arithmetic processing unit 10 (step in FIG. 2). twenty one). Next, the magnification related to the layout diagram 3 is designated by the magnification setting unit 8, and this magnification data is
(Step 22 in FIG. 2). Thereafter, when the point of repair P on the layout diagram 3 is designated by the pointer 4 and the point designation switch 6 for the repair is pressed,
The decoder 7 operates in the same manner as in the case of the above-mentioned reference point, and the data of the repair location P is set in the arithmetic processing unit 10 (second
Step 23 in the figure). The arithmetic processing unit 10 converts the distance OP into an actual distance on the LSI chip 48 based on the data of the reference point (point O), the repair point (point P), and the set magnification of the layout diagram 3. Output the result to the driving device 12,
The XY stage 49 moves according to this distance (step 24 in FIG. 2).

When the XY stage 49 moves, the monitor device 14
A screen of the repair position is displayed as a screen 31 in FIG. At this time, although the repaired portion is displayed on the screen, errors caused by the arrangement density of the stress sensor 2, the setting accuracy (resolution) of the magnification setting device 8, the setting accuracy of the reference point, and the like are accumulated. Center of the screen (32a in Fig. 3)
And the center of the repair location (the intersection of FIG. 33a and 33b). Therefore, the objective lens 60 of the optical system is set to a high magnification by the optical system magnification switch 9 and a command is issued to the drive unit 12 by the direction indicating switch 11 (second example).
In the step 25), the XY stage 49 is moved to move the XY stage 49 to the center (32a) of the monitor screen as shown in the screen 34 of FIG. 3 (b).
At the intersection of 32b) and the center of the repair location (intersection of 33a and 33b)
(Step 26 in FIG. 2). After such adjustment, the point designation switch 6 is pressed. The arithmetic processing unit 10 detects that the point designation switch 6 has been pressed (step 27 in FIG. 2), and the X and Y stages of the XY stage
By reading the coordinates, the position data of the repaired part on the LSI chip is captured (step 28 in FIG. 2).

In this way, the repaired portion can be easily searched on the actual chip. In addition, when the repaired part is obtained from the reference point, if it cannot be obtained immediately from one layout drawing and one optical micrograph, a combination of the layout drawing and the optical micrograph or a combination of a plurality of optical micrographs is used. It is also possible to use it. That is, at first, the vicinity of the repaired part is searched out according to the procedure shown in FIG. 2 by using a low-magnification layout diagram or an optical micrograph, and a high-magnification optical micrograph is set on the table 1 again, and the procedure shown in FIG. 2 is repeated. While sequentially updating the reference points, a desired repair position may be finally obtained.

Next, the application of the position information input device described above is applied to an LSI wiring forming device (laser C) which is one of the energy beam processing devices.
The case of a VD device will be described as an example with reference to FIG.

FIG. 4 is a diagram showing the overall configuration of an LSI wiring forming apparatus provided with the above-mentioned position information input device. In the figure, the first
Those denoted by the same reference numerals as those in the drawings indicate the same or equivalent ones as already described, and the description thereof will be omitted.

First, wiring formation will be described. In FIG.
The load lock chamber 41 is connected to the main chamber 43 via a gate valve 42, and can be evacuated by vacuum pumps 44, 44 'through pipes 45, 45' and valves 46, 46 ', respectively. In the main chamber 43, there is a sample stage
A wafer (or chips as required) 48a is mounted on 47, and is configured to be movable by an XY stage 49 and a driving device 12. The wafer (or chip) 48a
The sample is supplied into the main chamber 43 by the transfer mechanism 51 together with the sample table 47. Further, a CVD material gas cylinder 54 is connected to the main chamber 43 via a pipe 52 and a valve 53. The laser light 56 output from the laser oscillator 55 is bent by a mirror 59 via a shutter mechanism 57 and an output adjustment mechanism 58, and is then irradiated onto a wafer 48a via a window 61 while being focused by an objective lens 60a. You. The illumination light 63 from the illumination light source 62 is bent by the mirror 65 via the filter 64, and then illuminates the wafer 48a via the objective lens 60a and the window 61. The surface of the wafer 48a is mirror 66, eyepiece 67
And can also be observed by the imaging device 68 and the monitor device 14 connected thereto. Also,
By the control device 69, the shutter mechanism 57, the output adjustment mechanism 58,
It is configured to control the filter 64 and the like.

Next, the function of each part and the procedure of wiring formation will be described.

A wafer (or chip) 48a on which wiring is to be formed is fixed to a sample table 47, and these are placed on an XY stage 49 in a main chamber 43 by a transport mechanism 51. After the inside of the main chamber 43 is sufficiently evacuated by the vacuum pump 44 ', the valve 46' is closed and the valve 53 is opened, and the gas in the cylinder 54, for example, Mo (CO) ₆ is introduced into the main chamber 43 through the pipe 52. Introduce. When the gas pressure of Mo (CO) ₆ reaches a predetermined pressure, for example, 0.1 Torr, the valve 53 is closed.

Then, the center of the field of view and the center of the laser spot are adjusted in advance, and the output adjusting mechanism 58 is set to an appropriate value by a command from the control device 69, and then the shutter mechanism 57 is driven. The wafer (or chip) 48a is irradiated with the laser light 56 output from the laser oscillator 55.
An arbitrary portion on the irradiated wafer (or chip) 48a is heated by the irradiation of the laser beam 56, so that Mo (CO) ₆ is decomposed and Mo is deposited. At this time, when the XY stage 49 is moved, the deposited Mo adheres to the film of the chip, and a wiring is formed. Through the above procedure, a defective portion in the LSI chip can be repaired (connected).

The above is the description of the wiring formation. Next, the specification of the repaired portion will be described.

In most LSI repairs, the defective wiring is traced on a layout diagram that plots the wiring on the LSI chip, and the repaired part (a part that is easy to repair) is written. Wiring is checked, and the repaired part is written on an optical microscope photograph.

Therefore, the position information input device described above is applied to this wiring forming device, and its operation is as follows. That is, in FIG. 4, the layout diagram 3 or the optical microscope photograph 3 ′ is placed on the table 1 in which the stress sensor 2 is embedded and arranged in the direction of the LSI chip 48 on the XY stage 49. And pointer 4,
By using the point designation switches 5, 6 and the magnification setting device 8, the reference point and the repaired point are designated on these figures,
The distance in the figure is converted into an actual distance on the LSI chip 48 by the arithmetic processing unit 10. XY according to the obtained distance
The stage 49 is moved, and the repair position on the LSI chip is displayed on the monitor device 14. Depending on the display screen, X
-The Y stage 49 is slightly moved to find the position of the final repaired part, specify the repaired part, and perform the above-described wiring formation.

As described above, the wiring forming apparatus by laser beam CVD has been described as an application example of the present invention. However, the present invention can be applied to the formation of wiring by ion beam CVD, an apparatus for cutting wiring by ion beam, and a processing apparatus by electron beam. Needless to say, the position information input device of the present invention is applicable.

Next, a position information input device according to an embodiment of the present invention will be described with reference to FIG. In FIG. 5, 70 is a computer, 71 is a CRT, 72 is a touch panel, 73 is a light pen, 7
4 is a mouse, 75 is a floppy disk drive, 76 is a keyboard, 77 is a hard disk drive, 78 is a digitizer, 79 is a digitizing pen, and 80 is a trackball. The computer 70 is connected to a CRT 71, a light pen 73, a mouse 74, a floppy disk drive 75, a keyboard 76, a hard disk drive 77, a digitizer 78, and a trackball 80, respectively. Further, the computer 70 is connected to the above-described wiring forming apparatus (not shown).

There are two methods for operating the apparatus. The first
Sets the layout diagram (or optical microscope photograph) 3 on the digitizer 78 and operates the digitizing pen 79 to
This is a method of inputting position information of a repaired part to the computer 70. In this case, the magnification and the origin are also specified by the digitizing pen 79. Second, the entire screen information of the layout diagram (or optical microscope photograph) 3 on the digitizer 78 is once input to the computer 70 by the image scan function of the digitizer, the information is displayed on the CRT 71, and the light pen is displayed on the touch panel 72. This is a method of operating the computer 73 to cause the computer 70 to store the position information of the repaired part. At this time, as the screen information to be displayed on the CRT 71, apart from the manual operation of placing the above-described layout diagram and the like on the digitizer 78, the LSI design data itself is stored in the floppy disk device 75 or the hard disk device 77 in advance. In advance, this information may be automatically extracted and displayed. The location information of the repaired part is
In order to store the data in the CRT 70, a position designation mark such as a cursor is displayed on the CRT 71, and then the mouse 74, the keyboard 76,
By operating the trackball 80 or the like to move a cursor or the like, position information can be input by a switch of the mouse 74, a key of the keyboard 76, or the point designation switches 5 and 6.

Repair of the LSI, as described in the wiring formation procedure,
The operation is performed in a vacuum chamber, and the apparatus itself is placed in a clean room. On the other hand, if the method of the present embodiment is used, it is only necessary to finally transmit the position information from the computer to the wiring forming apparatus using a communication cable, and the repair position can be specified remotely from outside the clean room. Can be. Further, according to the method of the present embodiment, it is possible to simultaneously provide position information to a plurality of repairing devices, and there is an effect that operability can be improved and labor can be saved.

〔The invention's effect〕

According to the present invention, position information of a corresponding position on an actual LSI chip can be easily input from a specific position on an LSI layout diagram or an optical microscope photograph, so that an LSI chip having a defective portion can be input. At the time of repair, the position information of the repaired portion is immediately provided to the device for wiring repair (cutting or connection), and energy beam processing can be performed. As a result, debugging in LSI development can be performed quickly.

In addition, if the input method according to the present invention is used, remote control becomes possible, so that it is possible to achieve complete cleanup of semiconductor repair and power saving by simultaneous input to a plurality of devices.

[Brief description of the drawings]

FIG. 1 is a block diagram of an example of a position information input device according to the present invention, FIG. 2 is a flowchart showing a processing procedure executed by an arithmetic processing unit in FIG. 1, and FIG. 3 is a monitor in FIG. Fig. 4 shows an example of the LSI chip screen displayed on the device.
FIG. 5 is a configuration diagram of an LSI wiring forming apparatus to which the position information input device shown in the drawing is applied, and FIG. 5 is a configuration diagram of a position information input device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Table 2 ... Stress sensor 3 ... Layout diagram 4 ... Pointer 5, 6 ... Point designation switch 7 ... Decoder, 8 ... Magnifier setting device 10 ... Operation processing device, 11 … Direction switch 12… Drive device 14… Monitor device 48… LSI chip 49… XY stage 70… Computer 71… CRT 72… Touch panel 73… Light pen 74… … Mouse, 76 …… Keyboard 78 …… Digitizer, 79 …… Digitize pen 80 …… Trackball

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hidezo Sano 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Hitachi, Ltd. Production Engineering Laboratory Co., Ltd. (72) Inventor, Sadao Ohara 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture In-house Hitachi, Ltd. (72) Keiichi Okamoto 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa (72) Inventor Takahiko Takahashi 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Computer Division, Hitachi, Ltd. (56) References JP-A-55-48489 (JP, A) JP-A-61-206584 (JP, A) JP-A-60-102291 (JP, A)

Claims (8)

(57) [Claims] A step of designating an irradiation position of an energy beam on a layout diagram or an optical microscope photograph of a sample displayed on a screen of a screen display means; a step of displaying an image of the sample; Displaying an irradiation position on the sample corresponding to the irradiation position specified on the image of the sample, and irradiating the sample with an energy beam based on the irradiation position displayed on the image, Processing the energy beam. 2. The energy beam processing method according to claim 1, wherein said energy beam is constituted by a laser beam. 3. The energy beam processing method according to claim 1, wherein said energy beam is constituted by an ion beam. 4. The energy beam processing method according to claim 1, wherein said energy beam is constituted by an electron beam. 5. A screen display means, a means for designating an irradiation position of an energy beam on a layout diagram or an optical microscope photograph of a sample displayed on the screen display means, and an image display unit for displaying an image of the sample. Means for displaying an irradiation spot on the sample corresponding to the irradiation spot specified on the screen display means on an image of the image display unit, and, based on the irradiation spot displayed on the image, Means for processing a sample by irradiating an energy beam. 6. An energy beam processing apparatus according to claim 5, wherein said energy beam is constituted by a laser beam. 7. An energy beam processing apparatus according to claim 5, wherein said energy beam is constituted by an ion beam. 8. An energy beam processing apparatus according to claim 5, wherein said energy beam is constituted by an electron beam.