JP2962738B2 - Humidity detector - Google Patents
Humidity detectorInfo
- Publication number
- JP2962738B2 JP2962738B2 JP1164156A JP16415689A JP2962738B2 JP 2962738 B2 JP2962738 B2 JP 2962738B2 JP 1164156 A JP1164156 A JP 1164156A JP 16415689 A JP16415689 A JP 16415689A JP 2962738 B2 JP2962738 B2 JP 2962738B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- moisture
- piezoresistive element
- sensitive
- detecting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は感湿伸縮体の伸縮を電気信号に変換する湿度
検出装置に関するものである。The present invention relates to a humidity detection device that converts expansion and contraction of a moisture-sensitive elastic body into an electric signal.
（ロ） 従来の技術 従来、湿度検出体としてセラミックスやポリマーな
ど、吸湿により電気的特性が変わるものが知られてい
る。これらの検出体は検出部がたえず測定雰囲気に晒さ
れているため、汚染の影響を受けやすく長期的安定性に
欠けるという欠点があった。このことから長期の安定性
が期待できる感湿伸縮体をSi半導体圧力センサのダイヤ
フラム上に被着した構造の湿度検出装置が提案されてい
る。(B) Conventional technology Conventionally, as a humidity detector, a material whose electric characteristics change due to moisture absorption, such as ceramics and polymers, is known. These detectors are disadvantageous in that they are susceptible to contamination and lack long-term stability because the detector is constantly exposed to the measurement atmosphere. For this reason, there has been proposed a humidity detecting device having a structure in which a moisture-sensitive elastic body that can be expected to have long-term stability is attached to the diaphragm of a Si semiconductor pressure sensor.
（ハ） 発明が解決しようとする課題 しかしながら、感湿伸縮体の伸縮を電気に変換するた
めには、伸縮を応力に変える弾性体と応力を電気信号に
変換するピエゾ抵抗素子が必要である。このためSiの微
細加工技術を用いたダイヤフラム構造をとる湿度センサ
などが提案されているが、製作工程が複雑となりそれに
伴いコスト的にも高くなるという欠点があった。(C) Problems to be Solved by the Invention However, in order to convert the expansion and contraction of the moisture-sensitive elastic body into electricity, an elastic body that converts the expansion and contraction into stress and a piezoresistive element that converts the stress into an electric signal are required. For this reason, humidity sensors and the like having a diaphragm structure using microfabrication technology of Si have been proposed, but have the disadvantage that the manufacturing process becomes complicated and the cost increases accordingly.
本発明は上記の点に鑑みて成されたもので製作工程が
簡単でしかも安価となる湿度検出装置を提供することを
目的とする。The present invention has been made in view of the above points, and has as its object to provide a humidity detecting device which is simple and inexpensive in the manufacturing process.
（ニ） 課題を解決するための手段 本発明の湿度検出装置は、弾性体として金属ベースや
セラミックス基板など安価な材料を用い、感湿伸縮体の
伸縮による応力を弾性体基板上に形成した薄膜ピエゾ抵
抗素子を用いて検出するようにしたものである。(D) Means for Solving the Problems The humidity detecting device of the present invention uses an inexpensive material such as a metal base or a ceramic substrate as an elastic body, and forms a thin film in which stress due to expansion and contraction of the moisture sensitive elastic body is formed on the elastic substrate. The detection is performed using a piezoresistive element.
（ホ） 作用 本発明の湿度検出装置は、感湿伸縮体の伸縮による応
力を薄膜ピエゾ抵抗素子を用いて電気信号に変換して検
出する。この薄膜ピエゾ抵抗素子はCVD法やスパッタ蒸
着法により作成されるために、任意基板上に薄膜が形成
でき、またホトリソグラフ技術により微細加工が行なえ
る。その結果安価で量産に向くなどの利点がある。(E) Function The humidity detecting device of the present invention converts stress caused by expansion and contraction of the moisture-sensitive elastic body into an electric signal using a thin-film piezoresistive element and detects the electric signal. Since this thin film piezoresistive element is formed by a CVD method or a sputter deposition method, a thin film can be formed on an arbitrary substrate, and fine processing can be performed by a photolithographic technique. As a result, there are advantages such as being inexpensive and suitable for mass production.
（ヘ） 実施例 以下本発明による湿度検出装置の実施例を図について
説明する。第１図において、（１）は金属を用いた弾性
体基板、（２）は前記弾性体基板（１）上にCVD法など
により形成したSiO2絶縁膜、（３）は前記絶縁膜（２）
上にCVD法によって成膜した多結晶やアモルファスの半
導体膜をホトリソグラフ技術を用いて作製した薄膜ピエ
ゾ抵抗素子、（４）はアルミ配線でこれらにより応力検
出部分が構成される。（５）はCVD法などを用いて成膜
されたSiNなどによるパッシベーション膜で該膜により
電気回路部分への湿度の混入を防止している。（６）は
前記パッシベーション膜（５）の上にディップ法やスピ
ンコート法によって成膜された感湿伸縮体膜で該膜の形
成により湿度検出装置が完成する。(F) Example Hereinafter, an example of the humidity detecting device according to the present invention will be described with reference to the drawings. In FIG. 1, (1) is an elastic substrate using a metal, (2) is a SiO 2 insulating film formed on the elastic substrate (1) by a CVD method or the like, and (3) is an insulating film (2). )
A thin-film piezoresistive element formed by using a photolithographic technique on a polycrystalline or amorphous semiconductor film formed thereon by the CVD method. In (4), an aluminum wiring constitutes a stress detecting portion. (5) is a passivation film made of SiN or the like formed by a CVD method or the like, which prevents moisture from entering the electric circuit portion. (6) is a moisture-sensitive stretchable film formed on the passivation film (5) by a dipping method or a spin coating method, whereby a humidity detecting device is completed by forming the film.
また前記感湿伸縮体膜（６）の成膜面はパッシベーシ
ョン膜（５）側以外にも第２図に示すごとく弾性体基板
（１）側に設けてもよい。更に弾性体基板（１）として
半導体も使用することができる。The film-forming surface of the moisture-sensitive elastic film (6) may be provided on the elastic substrate (1) side as shown in FIG. 2 in addition to the passivation film (5) side. Furthermore, a semiconductor can also be used as the elastic substrate (1).
第３図は温度補償型の湿度検出装置の要部断面を示す
もので、（１）はSiなどの半導体を用いた弾性体基板、
（５′）（５′）は前記弾性体基板（１）の両側に形成
したSiNなどのパッシベーション膜、（３）は前記パッ
シベーション膜（５′）上にCVD法などで作成した薄膜
ピエゾ抵抗素子で該素子にはアルミ配線（４）（４）が
設けられている。（５）はCVD法などを用いて成膜され
たSiNなどによるパッシベーション膜で該膜により電気
回路部分への湿度の混入を防止している。（６）はSiに
熱膨張係数をあわせたポリイミドなどからなる感湿伸縮
体膜で前記薄膜ピエゾ抵抗素子に応力を発生させない構
造となっている。FIG. 3 shows a cross section of a main part of a temperature compensation type humidity detecting device. (1) shows an elastic substrate using a semiconductor such as Si,
(5 ') and (5') are passivation films such as SiN formed on both sides of the elastic substrate (1), and (3) are thin film piezoresistive elements formed on the passivation film (5 ') by a CVD method or the like. The element is provided with aluminum wirings (4) and (4). (5) is a passivation film made of SiN or the like formed by a CVD method or the like, which prevents moisture from entering the electric circuit portion. (6) is a moisture-sensitive stretchable film made of polyimide or the like having a coefficient of thermal expansion matched to that of Si, and has a structure in which stress is not generated in the thin-film piezoresistive element.
（ト） 発明の効果 本発明によれば、感湿伸縮体の伸縮を利用する信頼性
の高い湿度検出装置を安価に提供することができる。(G) Effects of the Invention According to the present invention, a highly reliable humidity detecting device utilizing the expansion and contraction of a moisture-sensitive elastic body can be provided at low cost.
また、ピエゾ抵抗素子及びアルミ配線の上部に、電気
回路部分への湿度の混入を防止す為のパッシベーション
膜を成膜することにより、感湿伸縮体膜からの湿度の混
入を防止でき、更に信頼性の高い湿度検出装置を提供す
ることができる。In addition, by forming a passivation film on the piezoresistive element and aluminum wiring to prevent moisture from entering the electric circuit part, it is possible to prevent moisture from entering the moisture-sensitive stretchable film and to further improve reliability. It is possible to provide a highly sensitive humidity detection device.
また弾性体基板材料を適当に選ぶことにより、温度に
よる出力の変動を低減し補償することできる。Also, by appropriately selecting the elastic substrate material, fluctuations in output due to temperature can be reduced and compensated.
第１図及び第２図は本発明による湿度検出装置の異なる
実施例を示す要部断面図、第３図は同じく温度補償型の
実施例を示す要部断面図である。 （１）……弾性体基板、（２）……SiO2絶縁膜、（３）
……薄膜ピエゾ抵抗素子、（４）……アルミ配線、
（５）……パッシベーション膜、（６）……感湿伸縮
体。1 and 2 are cross-sectional views of main parts showing different embodiments of a humidity detecting device according to the present invention, and FIG. 3 is a cross-sectional view of main parts showing a temperature compensation type embodiment. (1) ... elastic substrate, (2) ...... SiO 2 insulating film, (3)
…… Thin film piezoresistive element, (4)… Aluminum wiring,
(5) ... a passivation film, (6) ... a moisture-sensitive elastic body.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮井 良雄 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 昭59−67445（ＪＰ，Ａ) 特開 昭54−158289（ＪＰ，Ａ) 特開 昭63−100353（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Yoshio Miyai 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-59-67445 (JP, A) JP-A Sho 54-158289 (JP, A) JP-A-63-100353 (JP, A)
Claims (1)
度検出装置において、 弾性体基板上に絶縁膜を介して薄膜ピエゾ抵抗素子を形
成し、 前記絶縁膜上で且つ前記ピエゾ抵抗素子から配される金
属性配線を設け、 前記ピエゾ抵抗素子及び前記金属性配線の上部に湿度防
止の保護膜を成膜し、 該保護膜の上部に感湿伸縮体膜を成膜し、 前記感湿伸縮体膜の伸縮による応力を前記ピエゾ抵抗素
子を用いて検出するようにしたことを特徴とする湿度検
出装置。1. A humidity detecting device for converting expansion and contraction of a moisture-sensitive elastic body into an electric signal, wherein a thin-film piezoresistive element is formed on an elastic substrate via an insulating film, and the piezoresistive element is formed on the insulating film. Forming a moisture-proof protective film on the piezoresistive element and the metallic wire; forming a moisture-sensitive stretchable film on the protective film; A humidity detecting device, wherein a stress caused by expansion and contraction of a wet elastic film is detected using the piezoresistive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1164156A JP2962738B2 (en) | 1989-06-27 | 1989-06-27 | Humidity detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1164156A JP2962738B2 (en) | 1989-06-27 | 1989-06-27 | Humidity detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0328741A JPH0328741A (en) | 1991-02-06 |
| JP2962738B2 true JP2962738B2 (en) | 1999-10-12 |
Family
ID=15787806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1164156A Expired - Fee Related JP2962738B2 (en) | 1989-06-27 | 1989-06-27 | Humidity detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2962738B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994028372A1 (en) * | 1993-05-25 | 1994-12-08 | Rosemount Inc. | Organic chemical sensor |
| JP2014174100A (en) * | 2013-03-12 | 2014-09-22 | Asahi Kasei Electronics Co Ltd | Humidity sensor |
| JP6882850B2 (en) * | 2016-03-31 | 2021-06-02 | 京セラ株式会社 | Stress sensor |
| JP6691414B2 (en) * | 2016-03-31 | 2020-04-28 | 京セラ株式会社 | Stress sensor |
| JP2017181435A (en) * | 2016-03-31 | 2017-10-05 | 京セラ株式会社 | Stress sensor |
| JP2017181438A (en) * | 2016-03-31 | 2017-10-05 | 京セラ株式会社 | Stress sensor |
| JP6908355B2 (en) * | 2016-03-31 | 2021-07-28 | 京セラ株式会社 | Stress sensor |
| JP6694747B2 (en) * | 2016-03-31 | 2020-05-20 | 京セラ株式会社 | Stress sensor and manufacturing method thereof |
| JP2017181434A (en) * | 2016-03-31 | 2017-10-05 | 京セラ株式会社 | Stress sensor |
| US10866203B2 (en) | 2016-03-31 | 2020-12-15 | Kyocera Corporation | Stress sensor |
| JP6882849B2 (en) * | 2016-03-31 | 2021-06-02 | 京セラ株式会社 | Stress sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158289A (en) * | 1978-06-05 | 1979-12-13 | Hitachi Ltd | Humidity detector |
| JPS5967445A (en) * | 1982-10-12 | 1984-04-17 | Ozawa Juichiro | Humidity sensor |
-
1989
- 1989-06-27 JP JP1164156A patent/JP2962738B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328741A (en) | 1991-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4456919A (en) | Thermopile type detector with temperature sensor for cold junction | |
| JP2962738B2 (en) | Humidity detector | |
| JP3114453B2 (en) | Physical quantity detection sensor and process state detector | |
| US4624137A (en) | Semiconductor device | |
| US4472239A (en) | Method of making semiconductor device | |
| US5404125A (en) | Infrared radiation sensor | |
| JPS6341080A (en) | Semiconductor acceleration sensor | |
| JP4307738B2 (en) | Pressure sensor | |
| US5231878A (en) | Mass air flow sensor | |
| JPH06105178B2 (en) | Control and detection circuit for a mass airflow sensor | |
| JPH0810231B2 (en) | Flow sensor | |
| US4932265A (en) | Pressure transducer using thick film resistor | |
| JP3255852B2 (en) | Piezoresistive element and method of manufacturing the same | |
| JPH09329499A (en) | Infrared sensor and infrared detector | |
| US6591683B1 (en) | Pressure sensor | |
| GB2251312A (en) | Sensor for measuring fluid flow rate | |
| US6453748B1 (en) | Boron nitride piezoresistive device | |
| US20020167058A1 (en) | Semiconductor pressure sensor decreasing creep stress in <110> crystalline axis direction | |
| JP3083901B2 (en) | Atmosphere sensor | |
| JP2003270016A (en) | Flow measuring apparatus | |
| US6619130B1 (en) | Pressure sensor | |
| JP3855458B2 (en) | Radiation temperature detector | |
| JP2654186B2 (en) | Humidity detector | |
| JPS6155263B2 (en) | ||
| JPH0827231B2 (en) | Humidity sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070806 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080806 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |