JP2960097B2 - Semiconductor device measurement method - Google Patents

Semiconductor device measurement method

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Publication number
JP2960097B2
JP2960097B2 JP2065598A JP6559890A JP2960097B2 JP 2960097 B2 JP2960097 B2 JP 2960097B2 JP 2065598 A JP2065598 A JP 2065598A JP 6559890 A JP6559890 A JP 6559890A JP 2960097 B2 JP2960097 B2 JP 2960097B2
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JP
Japan
Prior art keywords
measurement
semiconductor device
measurement data
data
identification number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2065598A
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Japanese (ja)
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JPH03267769A (en
Inventor
樋口  晴彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHICHIZUN TOKEI KK
Original Assignee
SHICHIZUN TOKEI KK
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Priority to JP2065598A priority Critical patent/JP2960097B2/en
Publication of JPH03267769A publication Critical patent/JPH03267769A/en
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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の特性測定方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for measuring characteristics of a semiconductor device.

〔従来の技術〕[Conventional technology]

近年、半導体技術が発達する中で様々な機能を持つ半
導体装置や、高精度、高性能の特徴を持った半導体装置
が開発されて来た。それらの半導体装置の中には目的の
機能を動作させることや特性の向上等を目的として半導
体装置の製造工程が終了した後に調整を行なうものが多
く見られる。これらの半導体装置の調整は半導体装置の
特性をある条件下で測定し、測定データをもとに調整値
を演算し半導体装置の内部、又は周辺回路に設けられた
条件設定手段に条件設定することで行なっていた。半導
体装置の条件設定の為の調整値が、複数の異なる条件下
において測定された複数の測定データを基に演算される
場合、調整値は必要なすべての測定データがそろって初
めて演算され、その結果に従って調整値が求められ条件
設定が行われる。以下図面により、複数の条件下での測
定データが調整の為に必要な半導体装置における従来の
測定方法を説明する。
2. Description of the Related Art In recent years, semiconductor devices having various functions and semiconductor devices having characteristics of high accuracy and high performance have been developed with the development of semiconductor technology. In many of these semiconductor devices, adjustment is performed after a semiconductor device manufacturing process is completed for the purpose of operating a desired function or improving characteristics. Adjustment of these semiconductor devices involves measuring the characteristics of the semiconductor device under certain conditions, calculating adjustment values based on the measured data, and setting conditions in the condition setting means provided inside the semiconductor device or in a peripheral circuit. It was done in. When an adjustment value for setting a condition of a semiconductor device is calculated based on a plurality of measurement data measured under a plurality of different conditions, the adjustment value is calculated only when all necessary measurement data are collected. An adjustment value is obtained according to the result, and condition setting is performed. Hereinafter, a conventional measurement method for a semiconductor device in which measurement data under a plurality of conditions is necessary for adjustment will be described with reference to the drawings.

第2図は従来行なわれていた複数の条件下での半導体
装置の測定に用いられるシステムの構成を示すブロック
図である。第2図において1は、識別番号記憶手段11と
条件設定手段12とを備えた半導体装置、2は測定装置、
3は演算装置、4は調整装置、5は記憶装置、6は識別
番号認識装置、7は制御装置である。
FIG. 2 is a block diagram showing a configuration of a system used for measuring a semiconductor device under a plurality of conditions, which has been conventionally performed. In FIG. 2, 1 is a semiconductor device having an identification number storage unit 11 and a condition setting unit 12, 2 is a measuring device,
3 is an arithmetic unit, 4 is an adjusting device, 5 is a storage device, 6 is an identification number recognition device, and 7 is a control device.

次に上記構成による、半導体装置の測定方法につい
て、例として測定条件がT1、T2、・・・Tnのn種類の温
度条件下で測定される半導体装置の測定方法を説明す
る。
Next, as a method of measuring a semiconductor device having the above configuration, a method of measuring a semiconductor device in which measurement conditions are measured under n kinds of temperature conditions of T1, T2,.

T1の測定条件において、前記制御装置7から識別番号
読出し信号r1が前記識別番号認識装置6に、また測定開
始信号e1が前記測定装置2および前記半導体装置1に出
力される。該半導体装置1は、測定開始信号e1を受ける
と動作を開始し出力信号O1を出力する。また前記識別番
号認識装置6は前記識別番号読出し信号r1を受けると前
記識別番号記憶手段11に記憶されている前記半導体装置
1の識別番号i1を読出し該識別番号i1を識別コードid1
にコード化し前記制御回路7に出力する。前記測定装置
2は前記測定開始信号e1を受けると前記出力信号O1を測
定し、該出力信号O1に基づいて測定データd1を発生し、
前記制御装置7に出力する。該制御装置7は前記識別コ
ードid1と前記測定データd1を前記記憶装置5に出力し
記憶装置5では前記識別コードid1と前記測定データd1
を対応させて記憶する。
In the measurement condition of T1, an identification number read signal r1 is output from the control device 7 to the identification number recognition device 6, and a measurement start signal e1 is output to the measurement device 2 and the semiconductor device 1. Upon receiving the measurement start signal e1, the semiconductor device 1 starts operating and outputs an output signal O1. When receiving the identification number read signal r1, the identification number recognition device 6 reads the identification number i1 of the semiconductor device 1 stored in the identification number storage means 11 and replaces the identification number i1 with the identification code id1.
And outputs it to the control circuit 7. Upon receiving the measurement start signal e1, the measuring device 2 measures the output signal O1, and generates measurement data d1 based on the output signal O1,
Output to the control device 7. The control device 7 outputs the identification code id1 and the measurement data d1 to the storage device 5, and the storage device 5 outputs the identification code id1 and the measurement data d1.
Are stored in association with each other.

以下、測定条件T2、T3、・・・Tn−1まで上記の測定
環境T1の場合と同様の測定を行う。このとき前記記憶装
置5には前記識別コードidに対応して測定データd2、d
3、・・・dn−1が記憶される。
Hereinafter, the same measurement as in the above measurement environment T1 is performed up to the measurement conditions T2, T3,..., Tn-1. At this time, the storage device 5 stores the measurement data d2, d corresponding to the identification code id.
3,... Dn-1 are stored.

そして最後の測定条件Tnにおいて、前記制御装置7は
識別番号読出し信号r1を前記識別番号認識装置6に、ま
た測定開始信号e1を前記測定装置2および前記半導体装
置1に出力する。該半導体装置1は測定開始信号e1を受
けると出力信号Onを出力する。前記識別番号認識装置6
は前記識別番号読出し信号r1を受けると、前記識別番号
記憶手段11に記憶されている前記半導体装置1の識別番
号i1を読出し、該識別番号i1を識別コードid1にコード
化し、前記制御装置7に出力する。前記測定装置2は前
記測定開始信号e1を受けると出力信号Onを測定し該出力
信号Onに基づいて測定データdnを発生し、前記制御装置
7に出力する。以上で測定が終了すると、次に前記制御
装置7は測定データ読出し信号s1、および前記識別コー
ドid1を前記記憶装置に出力すると共に、演算開始信号c
1、および測定データdnを前記演算装置3に出力する。
前記記憶回路5は測定データ読出し信号s1を受けると識
別コードid1に対応した前記測定データd1、d2、・・・d
n−1を演算装置3に出力する。前記演算装置3は演算
開始信号c1を受けると測定データd1、d2、・・・dnを演
算して条件設定データk1を算出し、調整装置4に出力す
る。該調整装置4は条件設定データk1に基づいて調整信
号b1を発生し、条件設定手段12に出力する。該条件設定
手段12が調整信号b1によって条件設定がなされることに
より前記半導体装置1の条件設定が終了する。
Then, in the last measurement condition Tn, the control device 7 outputs an identification number read signal r1 to the identification number recognition device 6, and outputs a measurement start signal e1 to the measurement device 2 and the semiconductor device 1. The semiconductor device 1 outputs an output signal On when receiving the measurement start signal e1. The identification number recognition device 6
Receives the identification number read signal r1, reads the identification number i1 of the semiconductor device 1 stored in the identification number storage means 11, encodes the identification number i1 into an identification code id1, and sends the identification number i1 to the control device 7. Output. Upon receiving the measurement start signal e1, the measuring device 2 measures an output signal On, generates measurement data dn based on the output signal On, and outputs it to the control device 7. When the measurement is completed as described above, the control device 7 outputs the measurement data readout signal s1 and the identification code id1 to the storage device, and the operation start signal c
1 and the measurement data dn are output to the arithmetic unit 3.
When the storage circuit 5 receives the measurement data read signal s1, the measurement data d1, d2,... D corresponding to the identification code id1.
n−1 is output to the arithmetic unit 3. When the arithmetic unit 3 receives the arithmetic start signal c1, it calculates the measurement data d1, d2,... Dn to calculate the condition setting data k1, and outputs it to the adjusting unit 4. The adjustment device 4 generates an adjustment signal b1 based on the condition setting data k1 and outputs it to the condition setting means 12. The condition setting of the semiconductor device 1 is completed when the condition setting means 12 sets the condition by the adjustment signal b1.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

上記従来の方法によれば複数の異なった条件下におけ
る測定データをもとに設定条件を求め、半導体装置の調
整を行なうことが出来る。しかしながら上記のような従
来方法では、すべてのデータの測定が終了するまで測定
データを記憶装置に記憶しておく必要がある。従来は、
測定データを外部の記憶装置に記憶しておき、すべての
データの測定が終了した後、演算し設定を行なうなどの
方法が取られていた。このような方法を用いた場合、測
定される半導体装置と測定データの1対1の対応が不可
欠であり、そのために個々の半導体装置が認識できるよ
うな手段をこうじなければならなかった。また測定デー
タの記憶装置は測定データの量や生産数量によって大規
模なものを必要とする場合があり、さらに測定条件、す
なわち測定環境、測定時間、測定間隔、測定場所、等が
多岐にわたった場合は測定データの保守、管理にかかる
負荷、設備が増大する。本発明の目的は上記欠点を排除
し効率的な半導体装置の特性測定方法を提供するもので
ある。
According to the above-described conventional method, it is possible to determine a setting condition based on measurement data under a plurality of different conditions and adjust the semiconductor device. However, in the above-described conventional method, it is necessary to store the measurement data in the storage device until the measurement of all data is completed. conventionally,
A method of storing measurement data in an external storage device and performing calculation and setting after measurement of all data is completed has been adopted. When such a method is used, a one-to-one correspondence between the semiconductor device to be measured and the measured data is indispensable, and for that purpose, a means must be used so that each semiconductor device can be recognized. Further, the storage device for the measurement data may require a large-scale storage device depending on the amount of the measurement data and the production quantity, and furthermore, the measurement conditions, that is, the measurement environment, the measurement time, the measurement interval, the measurement place, and the like are widely varied. In this case, the load and equipment for maintenance and management of the measurement data increase. An object of the present invention is to provide an efficient method for measuring the characteristics of a semiconductor device by eliminating the above-mentioned disadvantages.

〔課題を解決するための手段〕[Means for solving the problem]

前記目的を達成するための本発明の構成は、ICチップ
を有する半導体装置を温度変化等の複数の異なる環境下
において測定しその複数の測定データより演算された演
算データにもとづいて前記半導体装置の条件設定や選別
を行なう半導体装置の特性測定において、前記半導体装
置に、前記測定データを記憶するための測定データ記憶
手段をもうけ、前記演算データは前記測定データ記憶手
段に記憶された複数測定データを用いて算出することを
特徴とする。
A configuration of the present invention for achieving the above object is to measure a semiconductor device having an IC chip under a plurality of different environments such as a temperature change and to calculate the semiconductor device based on operation data calculated from the plurality of measurement data. In the characteristic measurement of the semiconductor device for performing the condition setting and the selection, the semiconductor device is provided with a measurement data storage unit for storing the measurement data, and the calculation data is a plurality of measurement data stored in the measurement data storage unit. It is characterized in that it is used to calculate.

〔実施例〕〔Example〕

以下本発明の実施例を図面に基づいて詳述する。第1
図は本発明の半導体装置の測定方法を実施するためのシ
ステムの構成を示すブロック図であり前記第2図と番号
が同じものは、同一要素を示すものであり重複する説明
については省略する。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First
FIG. 2 is a block diagram showing the configuration of a system for implementing the method of measuring a semiconductor device according to the present invention. Elements having the same reference numerals as those in FIG. 2 indicate the same elements, and a duplicate description will be omitted.

第1図において、10は半導体装置であり、13は測定デ
ータ記憶手段、8は書込み読出し装置である。
In FIG. 1, reference numeral 10 denotes a semiconductor device, 13 denotes measured data storage means, and 8 denotes a writing / reading device.

次に上記構成による、半導体装置10の測定方法につい
て説明する。例として第2図に示す従来例と同様測定条
件がT1、T2、・・・Tnのn種の温度条件下で測定される
半導体装置の測定方法を説明する。T1の測定条件におい
て前記制御装置7から測定開始信号e1が前記測定装置2
および半導体装置10に出力される。該半導体装置10は前
記測定開始信号e1を受けると動作を開始し、出力信号O1
を出力する。また測定装置2は測定開始信号e1を受ける
と前記出力O1を測定し、該出力信号O1にもとづいて測定
データd1を発生し、前記制御装置7に出力する。該制御
装置7は前記測定データd1とデータ書込み信号dw1を前
記書込み読出し装置8に出力する。該書込み読出し装置
8は前記データ書込み信号dw1を受けると前記測定デー
タd1を前記測定データ記憶手段13に書き込み記憶させ
る。以上で1回の測定が終了し、以下測定条件T2、T3、
・・・Tn−1まで上記の測定条件T1の場合と同様の測定
を行いその結果を測定データ記憶手段13に記憶させてい
く。このとき前記測定データ記憶手段13には、測定デー
タd2、d3、・・・dn−1が書き込まれ記憶される。
Next, a method for measuring the semiconductor device 10 having the above configuration will be described. As an example, a method of measuring a semiconductor device in which measurement conditions are measured under n kinds of temperature conditions of T1, T2,..., Tn as in the conventional example shown in FIG. Under the measurement condition of T1, the measurement start signal e1 is sent from the control device 7 to the measurement device 2
And output to the semiconductor device 10. The semiconductor device 10 starts operating when receiving the measurement start signal e1, and outputs the output signal O1.
Is output. When receiving the measurement start signal e1, the measurement device 2 measures the output O1, generates measurement data d1 based on the output signal O1, and outputs the measurement data d1 to the control device 7. The control device 7 outputs the measurement data d1 and the data write signal dw1 to the write / read device 8. Upon receiving the data write signal dw1, the writing / reading device 8 writes and stores the measurement data d1 in the measurement data storage means 13. This completes one measurement, and the following measurement conditions T2, T3,
.. Up to Tn−1, the same measurement as in the above measurement condition T1 is performed, and the measurement result is stored in the measurement data storage unit 13. At this time, the measurement data d2, d3,... Dn-1 are written and stored in the measurement data storage means 13.

最後にTnの測定条件において、前記制御装置7から測
定開始信号e1が前記測定装置2および前記半導体装置10
に出力されると該半導体装置10は出力信号Onを出力し前
記測定装置2は出力信号Onに基づいて測定データdnを発
生し前記制御装置7に出力することにより測定が終了す
るそして制御装置7は測定が終了した時点でデータ読出
し信号dr1を前記書込み読出し装置8に、また前記測定
データdnと演算開始信号c1を前記演算装置3に出力す
る。そして前記書込み読出し装置8は前記データ読出し
信号dr1を受けると前記測定データd1、d2、・・・dn−
1を前記演算装置3に出力し、該演算装置3は前記演算
開始信号c1を受けると前記測定データd1、d2、・・・dn
に従って条件設定データk1を演算し、出力する。この結
果調整装置4は前記調整条件設定データk1に基づいて調
整信号b1を出力し、前記条件設定手段12が調整値b1によ
って条件設定がなされることにより半導体装置10の条件
設定が終了する。
Finally, under the measurement condition of Tn, the measurement start signal e1 is sent from the control device 7 to the measurement device 2 and the semiconductor device 10.
The semiconductor device 10 outputs an output signal On, and the measuring device 2 generates measurement data dn based on the output signal On and outputs it to the control device 7, thereby completing the measurement. Outputs the data read signal dr1 to the write / read device 8 and the measurement data dn and the operation start signal c1 to the arithmetic device 3 when the measurement is completed. When the write / read device 8 receives the data read signal dr1, the write / read device 8 receives the measurement data d1, d2,.
1 to the arithmetic unit 3, and when the arithmetic unit 3 receives the operation start signal c1, the measurement data d1, d2,.
Calculates and outputs the condition setting data k1 according to. As a result, the adjustment device 4 outputs an adjustment signal b1 based on the adjustment condition setting data k1, and the condition setting of the semiconductor device 10 is completed when the condition setting means 12 sets the condition by the adjustment value b1.

〔発明の効果〕〔The invention's effect〕

上記の如く本発明によれば、複数の条件下における半
導体装置の測定において、それぞれの条件下での測定デ
ータを半導体装置の内部に記憶しておくことにより従来
例で見られるような測定データの保持に際して、測定デ
ータと半導体装置の1対1の対応を取るための認識手段
を持つ必要がなく、個々の半導体装置に識別番号記憶手
段、および識別番号認識装置を設ける必要がなくる。
又、複数の条件下での測定データを全ての測定が終了す
るまで外部の記憶装置に記憶しておく必要がないために
測定データの保守、管理の為の負荷が軽減しさらに記憶
装置を設ける必要もないため生産数量に応じて外部の記
憶装置の容量を変化させる必要がない。また個々の半導
体装置がそれぞれの測定データを持っているため外部の
記憶装置に障害が発生した場合に測定データが損なわれ
るといったようなことがない。したがって半導体装置の
測定を効率的に行なうことができる。
As described above, according to the present invention, in the measurement of a semiconductor device under a plurality of conditions, the measurement data under each condition is stored inside the semiconductor device, whereby the measurement data as seen in the conventional example is stored. At the time of holding, there is no need to have a recognition means for establishing a one-to-one correspondence between the measurement data and the semiconductor device, and it is not necessary to provide an identification number storage means and an identification number recognition device for each semiconductor device.
Further, since it is not necessary to store the measurement data under a plurality of conditions in an external storage device until all the measurements are completed, the load for maintenance and management of the measurement data is reduced, and a storage device is provided. Since there is no need, there is no need to change the capacity of the external storage device according to the production quantity. In addition, since each semiconductor device has its own measurement data, there is no possibility that the measurement data is lost when a failure occurs in an external storage device. Therefore, measurement of the semiconductor device can be performed efficiently.

【図面の簡単な説明】[Brief description of the drawings]

第2図は従来の半導体装置の測定方法を示すブロック
図、第1図は本発明の一実施例の測定方法を示すブロッ
ク図である。 1、10……半導体装置、 2……測定装置、3……演算装置、 4……調整装置、5……記憶装置、 6……識別番号認識装置、 7……制御装置、 8……書込み読出し装置、 11……認識番号記憶手段、 12……条件設定手段、 13……測定データ記憶手段。
FIG. 2 is a block diagram showing a conventional method for measuring a semiconductor device, and FIG. 1 is a block diagram showing a measuring method according to one embodiment of the present invention. 1, 10 semiconductor device, 2 measurement device, 3 arithmetic device, 4 adjustment device, 5 storage device, 6 identification number recognition device, 7 control device, 8 writing Readout device, 11: identification number storage means, 12: condition setting means, 13: measurement data storage means.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ICチップを有する半導体装置を温度変化等
の複数の異なる条件下において測定し、その複数の測定
データより演算されたデータにもとづいて前記半導体装
置の条件設定や選別を行なう半導体装置の特性測定にお
いて、前記半導体装置には前記測定データを記憶するた
めの測定データ記憶手段を設け、前記演算データは前記
測定データ記憶手段に記憶された複数のデータを用いて
算出することを特徴とする半導体装置の測定方法。
1. A semiconductor device which measures a semiconductor device having an IC chip under a plurality of different conditions such as a temperature change, and sets and sorts the conditions of the semiconductor device based on data calculated from the plurality of measurement data. In the characteristic measurement, the semiconductor device is provided with measurement data storage means for storing the measurement data, and the operation data is calculated using a plurality of data stored in the measurement data storage means. Semiconductor device measurement method.
JP2065598A 1990-03-16 1990-03-16 Semiconductor device measurement method Expired - Fee Related JP2960097B2 (en)

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JP2960097B2 true JP2960097B2 (en) 1999-10-06

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