JP2954387B2 - Two-layer double-sided TAB tape and manufacturing method thereof - Google Patents

Two-layer double-sided TAB tape and manufacturing method thereof

Info

Publication number
JP2954387B2
JP2954387B2 JP13078691A JP13078691A JP2954387B2 JP 2954387 B2 JP2954387 B2 JP 2954387B2 JP 13078691 A JP13078691 A JP 13078691A JP 13078691 A JP13078691 A JP 13078691A JP 2954387 B2 JP2954387 B2 JP 2954387B2
Authority
JP
Japan
Prior art keywords
layer
hereinafter abbreviated
dianhydride
sided
tab tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13078691A
Other languages
Japanese (ja)
Other versions
JPH05251508A (en
Inventor
義之 山森
俊夫 中尾
真一 三上
卓哉 栃本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP13078691A priority Critical patent/JP2954387B2/en
Publication of JPH05251508A publication Critical patent/JPH05251508A/en
Application granted granted Critical
Publication of JP2954387B2 publication Critical patent/JP2954387B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体素子実装用のT
AB(Tape Automated Bondin
g)テープの製造方法に関し、より詳細には2層両面T
ABテープの製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a T
AB (Tape Automated Bondin)
g) Regarding the method of manufacturing the tape, more specifically, a two-layer double-sided T
The present invention relates to a method for producing an AB tape.

【0002】[0002]

【従来の技術】近年の半導体実装技術の進歩は著しい
が、特にTABは、極めて高密度に導体パターンが形成
できるために、多ピン化に容易に対応でき、またボンデ
イングの際にはワイヤーを用いる事なく、リード全体を
一度に半導体素子との配線接続が可能であるため、高密
度実装技術が必要とされている現在、活発に開発が進め
られている。中でも、下面にアース層を設けて低インピ
ーダンス化し、ノイズによる影響を少なくできる両面T
ABが高速IC用に検討され始めている。
2. Description of the Related Art In recent years, progress in semiconductor mounting technology has been remarkable. Particularly, TAB can easily cope with the increase in the number of pins because a conductor pattern can be formed at an extremely high density, and a wire is used for bonding. Since the entire lead can be connected to the semiconductor element at a time without any trouble, the development is being actively promoted at the present time when high-density mounting technology is required. Above all, a double-sided T that can reduce the impedance by providing a ground layer on the lower surface and reduce the influence of noise
AB is beginning to be considered for high-speed ICs.

【0003】TABテープとしては、2層構造と3層構
造との2種類あるが、3層構造(以下、3層TABと略
す)は一般的に銅箔等の導体箔と耐熱性の樹脂フィルム
を接着剤で張り合わせたものであり、フィルムとして耐
熱性及び耐薬品性等の優れた特性を持つポリイミドを用
いても耐熱性に劣る接着剤層を持つため、その特性を充
分に生かすことが出来なかった。
There are two types of TAB tapes, a two-layer structure and a three-layer structure. A three-layer structure (hereinafter abbreviated as three-layer TAB) is generally a conductor foil such as a copper foil and a heat-resistant resin film. It is possible to make full use of its properties because it has an adhesive layer with inferior heat resistance even if a polyimide film with excellent properties such as heat resistance and chemical resistance is used as a film. Did not.

【0004】一方、2層構造の両面TAB(以下、2層
TABと略す)は、ベースフィルムに接着剤層を持たな
いためにTABとしての耐熱性に優れるが、その製造法
の困難さ故に実用に供されることが少なかった。すなわ
ち2層TABの製造法としてはポリイミド等の耐熱フィ
ルム上に、スパッタリング、蒸着、メッキ等の薄膜形成
技術を用いて導体層を設けた後、ベースフィルム及び導
体層にエッチング処理を施しデバイスホールやスプロケ
ットホールといった所定の開孔部、及び導体パターンを
形成する方法で製造されているが、屈曲性の優れた圧延
箔や強度の優れたFe−Ni合金箔等を使用できないと
いった問題点や、ベースフィルム開孔部の形成にエッチ
ング法を用いて開孔部を設けなくてはならないために、
3層TABの打ち抜き法と比較して生産性が著しく低下
してしまうといった問題点を有している。
[0004] On the other hand, a double-sided TAB having a two-layer structure (hereinafter abbreviated as a two-layer TAB) has excellent heat resistance as a TAB because it has no adhesive layer on a base film. Was rarely offered. That is, as a method of manufacturing the two-layer TAB, a conductor layer is provided on a heat-resistant film such as polyimide by using a thin film forming technique such as sputtering, vapor deposition, plating, and the like. Although it is manufactured by a method of forming a predetermined opening such as a sprocket hole, and a conductor pattern, it is impossible to use a rolled foil having excellent flexibility or an Fe-Ni alloy foil having excellent strength, Because it is necessary to provide the aperture using the etching method to form the film aperture,
There is a problem that productivity is significantly reduced as compared with the three-layer TAB punching method.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的とすると
ころは、接着剤層のない2層両面TABの本来持ってい
る耐熱性、耐アルカリ性、耐溶剤性、電気特性を低下さ
せることなく、生産性に優れ、カールの無い、銅箔とフ
ィルムとの密着性の良好な2層TABテープの製造法を
提供するものである。
An object of the present invention is to provide a two-layer double-sided TAB having no adhesive layer without lowering the inherent heat resistance, alkali resistance, solvent resistance, and electrical properties. An object of the present invention is to provide a method for producing a two-layer TAB tape which is excellent in productivity and has no curl and has good adhesion between a copper foil and a film.

【0006】[0006]

【課題を解決するための手段】本発明は、3,3′,
4,4′−ビフェニルテトラカルボン酸二無水物(BP
DA)と3,3′,4,4′−ベンゾフェノンテトラカ
ルボン酸二無水物(BTDA)及び/又はピロメリット
酸二無水物(PMDA)とのモル比(BPDA:BTD
A及び/又はPMDA)が100:0〜30:70であ
る芳香族テトラカルボン酸二無水物成分と、2,2−ビ
ス[4−(4−アミノフェノキシ)フェニル]プロパン
(BAPP)、1,3−ビス(3−アミノフェノキシ)
ベンゼン(APB)、P−フェニレンジアミン(PP
D)の3種の芳香族ジアミンのうち、BAPP及び/又
はAPB:PPDのモル比が100:0〜50:50で
ある芳香族ジアミン成分とから得られるポリイミドを中
間層に持つことを特徴とする2層両面TABテープ、お
よび、このポリイミドの前駆体溶液のワニスを用い導体
箔上に塗布・乾燥してイミド化させ、2層の基板とした
後、所定の開孔部を設け、導体箔にポリイミドフィルム
面を合わせて圧着し、導体箔に所要のパターンを形成す
ることを特徴とする2層両面TABテープの製造方法に
係るものである。
SUMMARY OF THE INVENTION The present invention is directed to a 3,3 ',
4,4'-biphenyltetracarboxylic dianhydride (BP
DA) and 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride (BTDA) and / or pyromellitic dianhydride (PMDA) in molar ratio (BPDA: BTD)
A and / or PMDA) of 100: 0 to 30:70, and an aromatic tetracarboxylic dianhydride component, and 2,2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), 3-bis (3-aminophenoxy)
Benzene (APB), P-phenylenediamine (PP
Among the three aromatic diamines of D), the intermediate layer has a polyimide obtained from an aromatic diamine component having a molar ratio of BAPP and / or APB: PPD of 100: 0 to 50:50. A two-layered double-sided TAB tape and a varnish of a precursor solution of the polyimide are applied to a conductor foil, dried and imidized to form a two-layer substrate. And press-bonding the same with a polyimide film surface to form a required pattern on a conductive foil, and a method for manufacturing a two-layer double-sided TAB tape.

【0007】ポリイミド前駆体(以下ポリアミック酸と
いう)溶液を金属箔に流延塗布して2層基板を得る方法
は、ロータリーコーター、ナイフコーター、ドクターブ
レード、フローコーター等の公知の塗布手段で50〜1
000μの均一な厚さに流延塗布する方法がとられる。
[0007] A method of casting a polyimide precursor (hereinafter referred to as polyamic acid) solution onto a metal foil to obtain a two-layer substrate is performed by a known coating method such as a rotary coater, a knife coater, a doctor blade, or a flow coater. 1
A method of casting and coating to a uniform thickness of 000μ is used.

【0008】また加熱によるポリアミック酸溶液の溶媒
除去は、始めから強い加熱を行うと、粗面となったりひ
きつったりするので、加熱は低温から徐々に高くする様
にした方が好ましい。例えば、100℃から350℃ま
で0.5時間以上かけて連続的に加熱する。0.5時間
未満であると、膜厚にもよるが、脱溶媒が不充分であっ
たり、イミドの閉環が不十分で特性が発揮されないこと
がある。また例えば、100℃で30分、次いで150
℃で30分、200℃で30分、250℃で30分,3
00℃で30分、350℃で30分という具合いに段階
的に昇温してもよい。加熱雰囲気も空気中でさしつかえ
ない場合もあるが、金属箔として銅箔など酸化され易い
金属箔を用いる場合は、減圧下ないしは不活性ガスを流
しながら非酸化性状態下に行う方が好ましい。この様に
して形成されたポリイミド皮膜層は一般的に10〜20
0μである。
In addition, when the solvent is removed from the polyamic acid solution by heating, if the heating is performed intensely from the beginning, the surface becomes rough or tight. Therefore, it is preferable to gradually increase the heating from a low temperature. For example, heating is continuously performed from 100 ° C. to 350 ° C. over 0.5 hour or more. If the time is less than 0.5 hour, depending on the film thickness, the solvent may not be sufficiently removed, or the imide may not be sufficiently ring-closed to exhibit no characteristics. Also, for example, at 100 ° C. for 30 minutes, then at 150 ° C.
30 minutes at 200 ° C, 30 minutes at 250 ° C, 3 minutes
The temperature may be increased stepwise at 00 ° C. for 30 minutes and at 350 ° C. for 30 minutes. In some cases, the heating atmosphere may be in the air. However, when a metal foil that is easily oxidized such as a copper foil is used as the metal foil, it is preferable that the heating is performed under reduced pressure or in a non-oxidizing state while flowing an inert gas. The polyimide film layer thus formed generally has a thickness of 10-20.
0μ.

【0009】2層基板に、開孔部を設ける方法としては
打ち抜き、切断等を用いることが出来る。2層基板と導
体箔とを圧着した後、導体箔上に所定のレジストパター
ンを形成し、エッチング処理を施す際には開孔部に所要
の穴埋め材を充填して開孔部からのエッチングを防止し
ておく必要がある。導体パターンを形成した後、導体箔
上に残留するレジスト及び穴埋め材を除去し、打ち抜き
加工によりスプロケットホールを形成する。
Punching, cutting, and the like can be used as a method of providing an opening in a two-layer substrate. After crimping the two-layer substrate and the conductor foil, a predetermined resist pattern is formed on the conductor foil, and when performing an etching process, the opening portion is filled with a necessary filling material to perform etching from the opening portion. It must be prevented. After forming the conductor pattern, the resist and the filling material remaining on the conductor foil are removed, and a sprocket hole is formed by punching.

【0010】本発明において、2層基板と導体箔とを加
熱・圧着する条件としてはプレス形式の場合は300〜
500℃、5〜100kg/cm、5〜30分、ロー
ル式ラミネータの場合は300〜500℃、1〜50k
g/cm、0.1〜10m/分の条件が適当であり、特
に温度としてはポリアミック酸フィルムの乾燥温度より
50〜100℃高い温度で実施することが望ましい。
In the present invention, the condition for heating and pressing the two-layer substrate and the conductor foil is 300 to 300 in the case of a press type.
500 ° C., 5 to 100 kg / cm 2 , 5 to 30 minutes, 300 to 500 ° C., 1 to 50 k for a roll laminator
The conditions of g / cm and 0.1 to 10 m / min are appropriate, and it is particularly desirable to carry out the reaction at a temperature 50 to 100 ° C. higher than the drying temperature of the polyamic acid film.

【0011】本発明で用いるポリアミック酸溶液は、フ
ィルム形成能があり、金属箔との密着性が優れ、熱可塑
性があればよいが、次に示すようなポリアミック酸が最
も目的にかなっている。即ち、テトラカルボン酸二無水
物成分とジアミン成分とを反応させるに当たり、3,
3′,4,4′−ビフェニルテトラカルボン酸二無水物
(BPDA)と3,3′,4,4′−ベンゾフェノンテ
トラカルボン酸二無水物(BTDA)及び/又はピロメ
リット酸二無水物(PMDA)とのモル比(BPDA:
BTDA及び/又はPMDA)が100:0〜30:7
0である芳香族テトラカルボン酸二無水物成分と、2,
2−ビス[4−(4−アミノフェノキシ)フェニル]プ
ロパン(BAPP)、1,3−ビス(3−アミノフェノ
キシ)ベンゼン(APB)、P−フェニレンジアミン
(PPD)の3種の芳香族ジアミンのうち、BAPP及
び/又はAPB:PPDのモル比が100:0〜50:
50である芳香族ジアミン成分とから得られるポリアミ
ック酸である。
The polyamic acid solution used in the present invention may have a film-forming ability, an excellent adhesion to a metal foil, and a thermoplastic property, but the following polyamic acid is most suitable. That is, upon reacting the tetracarboxylic dianhydride component with the diamine component,
3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA), 3,3', 4,4'-benzophenonetetracarboxylic dianhydride (BTDA) and / or pyromellitic dianhydride (PMDA) ) And the molar ratio (BPDA:
BTDA and / or PMDA) from 100: 0 to 30: 7
An aromatic tetracarboxylic dianhydride component which is 0;
2-bis [4- (4-aminophenoxy) phenyl] propane (BAPP), 1,3-bis (3-aminophenoxy) benzene (APB) and P-phenylenediamine (PPD) Among them, the molar ratio of BAPP and / or APB: PPD is 100: 0 to 50:
And a polyamic acid obtained from an aromatic diamine component of 50.

【0012】本発明で用いるテトラカルボン酸二無水物
は、3,3′,4,4′−ビフェニ、テトラカルボン酸
二無水物、3,3′,4,4′−ベンゾフェノンテトラ
カルボン酸二無水物と、ピロメリット酸二無水物である
が、この他の酸、例えば2,3,3′,4,−ビフェニ
ルテトラカルボン酸二無水物、3,3′,4,4′−P
−テルフェニルテトラカルボン酸二無水物、2,3,
6,7−ナフタレンテトラカルボン酸二無水物、3,
3′,4,4′−P−テルフェニルテトラカルボン酸二
無水物,4,4′−へキサフルオロイソプロピリデンビ
ス(フタル酸無水物)等の酸二無水物も特性を損わない
範囲で併用することが出来る。
The tetracarboxylic dianhydride used in the present invention is 3,3 ', 4,4'-biphenyl, tetracarboxylic dianhydride, 3,3', 4,4'-benzophenonetetracarboxylic dianhydride. And pyromellitic dianhydride. Other acids such as 2,3,3 ', 4, -biphenyltetracarboxylic dianhydride and 3,3', 4,4'-P
-Terphenyltetracarboxylic dianhydride, 2,3
6,7-naphthalenetetracarboxylic dianhydride, 3,
Acid dianhydrides such as 3 ', 4,4'-P-terphenyltetracarboxylic dianhydride and 4,4'-hexafluoroisopropylidenebis (phthalic anhydride) are also provided within the range where the properties are not impaired. Can be used together.

【0013】本発明で用いるジアミンは、2,2−ビス
[4−(4−アミノフェノキシ)フェニル]プロパン、
1,3−ビス(3−アミノフェノキシ)ベンゼンと、P
−フェニレンジアミンであるが、この他のアミン例えば
4,4′−ジアミノジフェニルメタン、3,3′−ジメ
チルベンジジン、4,4′−ジアミノ−P−テルフェニ
ル、4,4′−ジアミノ−P−クォーターフェニル、
2,8−ジアミノジフェニレンオキサイドなどのジアミ
ンも特性を損わない範囲で併用することができる。
The diamine used in the present invention is 2,2-bis [4- (4-aminophenoxy) phenyl] propane,
1,3-bis (3-aminophenoxy) benzene and P
Phenylenediamine, but other amines such as 4,4'-diaminodiphenylmethane, 3,3'-dimethylbenzidine, 4,4'-diamino-P-terphenyl, 4,4'-diamino-P-quarter Phenyl,
Diamines such as 2,8-diaminodiphenylene oxide can be used in combination as long as the properties are not impaired.

【0014】テトラカルボン酸二無水物成分とジアミン
成分との反応は酸成分/アミン成分(モル比)0.90
〜1.00で行うのが好ましく、0.90より低いと重
合度が上がらず硬化後の皮膜特性が悪い。1.00より
大きいと、硬化時にガスを発生し、平滑な皮膜を得るこ
とが出来ない。
The reaction between the tetracarboxylic dianhydride component and the diamine component is carried out with an acid component / amine component (molar ratio) of 0.90.
It is preferably carried out at 1.01.00, and when it is lower than 0.90, the degree of polymerization does not increase and the film properties after curing are poor. If it is larger than 1.00, gas is generated at the time of curing, and a smooth film cannot be obtained.

【0015】反応は通常、テトラカルボン酸二無水物及
び/又はジアミン類と反応しない有機極性溶媒中で行わ
れる。この有機極性溶媒は、反応系に対して不活性であ
り、かつ生成物に対して溶媒であること以外に、反応成
分の少なくとも一方、好ましくは両者に対して良溶媒で
なければならない。この種の溶媒として代表的なもの
は、N,N−ジメチルホルムアミド、N,N−ジメチル
アセトアミド、ジメチルスルホン、ジメチルスルホキシ
ド、N−メチル−2−ピロリドン等があり、これらの溶
媒は単独または組み合わせて使用される。この他にも溶
媒として組み合わせて用いられるものとしてベンゼン、
ジオキサン、キシレン、トルエン、シクロヘキサン等の
非極性溶媒が、原料の分散媒、反応調節剤あるいは生成
物からの揮散調節剤、皮膜平滑剤等として使用される。
The reaction is usually carried out in an organic polar solvent which does not react with tetracarboxylic dianhydrides and / or diamines. In addition to being inert to the reaction system and being a solvent for the product, the organic polar solvent must be a good solvent for at least one of the reaction components, preferably both. Typical examples of this type of solvent include N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and the like. These solvents may be used alone or in combination. used. In addition, benzene, which is used in combination as a solvent,
Non-polar solvents such as dioxane, xylene, toluene, cyclohexane and the like are used as a dispersion medium of a raw material, a reaction regulator or a volatilization regulator from a product, a film smoothing agent and the like.

【0016】反応は一般的に無水の条件下で行うことが
好ましい。これはテトラカルボン酸二無水物が水により
開環し、不活性化し、反応を停止させる恐れがあるため
である。このため仕込原料中の水分も溶媒中の水分も除
去する必要がある。しかし一方、反応の進行を調節し、
樹脂重合度をコントロールするためにあえて水を添加す
ることも行われる。また反応は不活性ガス雰囲気中で行
われることが好ましい。これはジアミン類の酸化を防止
するためである。不活性ガスとしては一般的に乾燥窒素
ガスが使用される。
The reaction is generally preferably carried out under anhydrous conditions. This is because the tetracarboxylic dianhydride may be ring-opened by water, inactivated, and stop the reaction. Therefore, it is necessary to remove both the water in the raw materials and the water in the solvent. But on the other hand, it regulates the progress of the reaction,
Water is also added to control the degree of polymerization of the resin. The reaction is preferably performed in an inert gas atmosphere. This is to prevent oxidation of diamines. Dry nitrogen gas is generally used as the inert gas.

【0017】導体層として用いることのできる材料とし
ては、銅、アルミニウム、ニッケル等の単体の金属箔に
加えFe−Ni合金、Fe−Cr−Al合金等の金属箔
が挙げられる。
Examples of the material that can be used for the conductor layer include metal foils such as Fe—Ni alloy and Fe—Cr—Al alloy in addition to simple metal foils such as copper, aluminum and nickel.

【0018】[0018]

【作用】本発明は、導体箔上に特定のポリアミック酸溶
液を塗布・乾燥して得られた2層基板に孔加工を行い、
さらに、導体箔と加熱・圧着し、導体配線を形成する工
程をとることにより、容易にかつ安価に、生産性・収率
よく2層両面TABテープを得ることができる。
According to the present invention, a hole is formed in a two-layer substrate obtained by applying and drying a specific polyamic acid solution on a conductive foil,
Furthermore, by performing a step of forming a conductor wiring by applying heat and pressure to the conductor foil, a two-layer double-sided TAB tape can be obtained easily and inexpensively with high productivity and yield.

【0019】[0019]

【実施例】(実施例1)温度計、攪拌装置、環流コンデ
ンサーおよび乾燥窒素ガス吹き込み口を備えた4つ口セ
パラブルフラスコにBAPP20.53g(0.05m
ol)、APB14.62g(0.05mol)をと
り、これに無水のN−メチル−2−ピロリドン90重量
%とトルエン10重量%の混合溶剤を、全仕込原料中の
固形分割合が20重量%になるだけの量を加えて溶解し
た。乾燥窒素ガスは反応の準備段階より生成物取り出し
までの全工程にわたり流しておいた。次いで精製したB
PDA20.60g(0.07mol)、BTDA9.
76g(0.03mol)を撹拌しながら少量ずつ添加
するが、発熱反応であるため、外部水槽に約15℃の冷
水を循環させてこれを冷却した。添加後、内部温度を2
0℃に設定し、5時間攪拌し反応を終了してポリアミッ
ク酸溶液を得た。
EXAMPLE 1 In a four-neck separable flask equipped with a thermometer, a stirrer, a reflux condenser and a dry nitrogen gas inlet, 20.53 g (0.05 m) of BAPP was placed.
ol) and 14.62 g (0.05 mol) of APB, a mixed solvent of 90% by weight of anhydrous N-methyl-2-pyrrolidone and 10% by weight of toluene was added thereto, and the solid content ratio in all the charged materials was 20% by weight. Was added and dissolved. Dry nitrogen gas was allowed to flow throughout the entire process from the preparation of the reaction to the removal of the product. Then purified B
20.60 g (0.07 mol) of PDA, BTDA9.
76 g (0.03 mol) was added little by little with stirring. Since the reaction was exothermic, cold water of about 15 ° C. was circulated through an external water tank to cool the mixture. After the addition, the internal temperature
The temperature was set at 0 ° C., and the mixture was stirred for 5 hours to complete the reaction, thereby obtaining a polyamic acid solution.

【0020】圧延銅箔上に、このポリアミック酸溶液を
スピンナーでイミド化後の厚みが50μmになるように
塗布し、110℃、15分さらに250℃、20分乾燥
を行い、2層基板を得た。金型を用いて孔加工(デバイ
スホール)を行い、市販の圧延銅箔粗化面上にポリイミ
ドフィルム面を重ね合わせ、400℃、40kg/cm
、15分加熱・圧着を行い、デバイスホールを持つ両
面2層基板を得た。
This polyamic acid solution is applied on a rolled copper foil by a spinner so that the thickness after imidization becomes 50 μm, and dried at 110 ° C. for 15 minutes and further at 250 ° C. for 20 minutes to obtain a two-layer substrate. Was. Drilling (device hole) using a mold, superimposing a polyimide film surface on the roughened surface of a commercially available rolled copper foil, 400 ° C., 40 kg / cm
2. Heating / compression bonding was performed for 15 minutes to obtain a double-sided two-layer substrate having device holes.

【0021】得られた両面2層基板を用い、導体箔上に
所定のレジストパターン及び開口部に穴埋め材を施し、
エッチング処理を施すことにより導体パターンを形成し
た後、導体箔上に残留するレジスト及び穴埋め材を除去
し、打ち抜き加工によりスプロケットホールを設けるこ
とにより2層両面TABテープを得た。
Using the obtained double-sided two-layer substrate, a predetermined resist pattern is formed on the conductive foil and a hole filling material is formed in the opening,
After forming a conductor pattern by performing an etching process, the resist and the filling material remaining on the conductor foil were removed, and a sprocket hole was provided by punching to obtain a two-layer double-sided TAB tape.

【0022】(実施例2)実施例1と同様のデバイスホ
ールのあいた2層基板を用い、粗化面上にポリイミドフ
ィルム面を重ね合わせ、ロール式のラミネータを用い
て、90℃、15Kg/cm、0.2m/分で、加熱
・圧着を行い、デバイスホールを持つ両面2層基板とし
た。この両面2層基板を使用する以外は実施例1と同様
にして2層TABテープを得た。
Example 2 Using the same two-layer substrate with device holes as in Example 1, a polyimide film surface was superposed on the roughened surface, and a roll type laminator was used at 90 ° C. and 15 kg / cm. 2. Heating / compression bonding was performed at 0.2 m / min to obtain a double-sided two-layer substrate having device holes. A two-layer TAB tape was obtained in the same manner as in Example 1 except that this double-sided two-layer substrate was used.

【0023】(実施例3)実施例1と同様な装置及び方
法で、PPD0.02mol、APB0.08mol、
BPDA0.08mol、PMDA0.02molから
なるポリアミック酸溶液を得た。その後は実施例1と同
様の方法で両面2層TABテープを得た。
(Embodiment 3) Using the same apparatus and method as in Embodiment 1, 0.02 mol of PPD, 0.08 mol of APB,
A polyamic acid solution composed of 0.08 mol of BPDA and 0.02 mol of PMDA was obtained. Thereafter, a double-sided two-layer TAB tape was obtained in the same manner as in Example 1.

【0024】(比較例1)実施例1と同様な装置及び方
法で、P−フェニレンジアミン0.1mol、BPDA
0.1molからなるポリアミック酸溶液を得た。その
後は、実施例1と同様の方法で両面2層基板の作製を試
みたが、銅箔と熱圧着しても全く接着しなかった。
(Comparative Example 1) Using the same apparatus and method as in Example 1, 0.1 mol of P-phenylenediamine, BPDA
A polyamic acid solution consisting of 0.1 mol was obtained. Thereafter, an attempt was made to produce a double-sided two-layer substrate in the same manner as in Example 1, but no adhesion was observed even when thermocompression-bonded to a copper foil.

【0025】(比較例2)実施例1と同様な装置及び方
法で、4,4′−ジアミノジフェニルエーテル0.1m
olとピロメリット酸二無水物0.1molからなるポ
リアミック酸溶液を得た。その後は実施例1と同様の方
法で両面2層基板の作製を試みたが、銅箔と熱圧着して
も全く接着しなかった。
(Comparative Example 2) Using the same apparatus and method as in Example 1, 0.1 m of 4,4'-diaminodiphenyl ether was used.
ol and 0.1 mol of pyromellitic dianhydride were obtained as a polyamic acid solution. After that, an attempt was made to produce a double-sided two-layer substrate in the same manner as in Example 1, but no adhesion was observed even when thermocompression-bonded to a copper foil.

【0026】[0026]

【発明の効果】本発明によれば、特定のポリアミック酸
を用いることにより生産性の優れた打ち抜き加工により
デバイスホールを設けた耐熱性、耐薬品性等に優れたカ
ールの無い、銅箔とフィルムとの密着性の良好な両面2
層TABを得ることができ、さらに蒸着法等では使用す
ることの出来なかった圧延箔を用いた両面2層TABも
作製することが可能となった。本発明は、連続シートを
用いた連続工程にも容易に適用できるなど、工業的な両
面2層TABの製造方法として好適なものである。
According to the present invention, there is provided a curl-free copper foil and film having excellent heat resistance, chemical resistance and the like provided with device holes by punching with excellent productivity by using a specific polyamic acid. Both sides 2 with good adhesion to
A layer TAB can be obtained, and a double-sided two-layer TAB using a rolled foil that cannot be used by a vapor deposition method or the like can be manufactured. INDUSTRIAL APPLICABILITY The present invention can be easily applied to a continuous process using a continuous sheet, and is suitable as an industrial method for producing a double-sided two-layer TAB.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平4−294557(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01L 21/60 311 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-294557 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/60 311

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 3,3′,4,4′−ビフェニルテトラ
カルボン酸二無水物(以下BPDAと略す)と3,
3′,4,4′−ベンゾフェノンテトラカルボン酸二無
水物(以下BTDAと略す)及び/又はピロメリット酸
二無水物(以下PMDAと略す)とのモル比(BPD
A;BTDA及び/又はPMDA)が100:0〜3
0:70である芳香族テトラカルボン酸二無水物成分
と、2,2−ビス[4−(4−アミノフェノキシ)フェ
ニル]プロパン(以下BAPPと略す)、1,3−ビス
(3−アミノフェノキシ)ベンゼン(以下APBと略
す)、P−フェニレンジアミン(以下PPDと略す)の
3種の芳香族ジアミンのうち、BAPP及び/又はAP
B:PPDのモル比が100:0〜50:50である芳
香族ジアミン成分とから得られるポリイミドを中間層に
持つことを特徴とする2層両面TABテープ。
1. A method according to claim 1, wherein 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (hereinafter abbreviated as BPDA) and
The molar ratio (BPD) with 3 ', 4,4'-benzophenonetetracarboxylic dianhydride (hereinafter abbreviated as BTDA) and / or pyromellitic dianhydride (hereinafter abbreviated as PMDA)
A: BTDA and / or PMDA) is 100: 0 to 3
0:70, an aromatic tetracarboxylic dianhydride component, 2,2-bis [4- (4-aminophenoxy) phenyl] propane (hereinafter abbreviated as BAPP), 1,3-bis (3-aminophenoxy) ) Of three aromatic diamines, benzene (hereinafter abbreviated as APB) and P-phenylenediamine (hereinafter abbreviated as PPD), BAPP and / or AP
A two-layer double-sided TAB tape comprising a polyimide obtained from an aromatic diamine component having a B: PPD molar ratio of 100: 0 to 50:50 in an intermediate layer.
【請求項2】 請求項1に示すポリイミドの前駆体溶液
のワニスを用い導体箔上に塗布・後乾燥させ、2層の基
板とした後、所定の開孔部を設け、導体箔にポリイミド
の前駆体フィルム面を合わせて圧着し、導体箔に所要の
パターンを形成することを特徴とする2層両面TABテ
ープの製造方法。
2. Using a varnish of the polyimide precursor solution according to claim 1, coating and drying on a conductor foil to form a two-layer substrate, and then providing a predetermined opening portion, the polyimide of the conductor foil A method for producing a two-layer double-sided TAB tape, wherein the surfaces of the precursor films are pressed together and a required pattern is formed on the conductor foil.
JP13078691A 1991-03-22 1991-03-22 Two-layer double-sided TAB tape and manufacturing method thereof Expired - Lifetime JP2954387B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13078691A JP2954387B2 (en) 1991-03-22 1991-03-22 Two-layer double-sided TAB tape and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13078691A JP2954387B2 (en) 1991-03-22 1991-03-22 Two-layer double-sided TAB tape and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH05251508A JPH05251508A (en) 1993-09-28
JP2954387B2 true JP2954387B2 (en) 1999-09-27

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ID=15042650

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2954387B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101506611B1 (en) * 2013-03-19 2015-03-27 에스케이씨코오롱피아이 주식회사 Polyimide Film

Also Published As

Publication number Publication date
JPH05251508A (en) 1993-09-28

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