JP2952814B2 - Connection unit between electronic components and board - Google Patents
Connection unit between electronic components and boardInfo
- Publication number
- JP2952814B2 JP2952814B2 JP19212096A JP19212096A JP2952814B2 JP 2952814 B2 JP2952814 B2 JP 2952814B2 JP 19212096 A JP19212096 A JP 19212096A JP 19212096 A JP19212096 A JP 19212096A JP 2952814 B2 JP2952814 B2 JP 2952814B2
- Authority
- JP
- Japan
- Prior art keywords
- sealant
- electronic component
- substrate
- projection
- bonding material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Wire Bonding (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は電子部品と基板との
接続ユニットに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection unit between an electronic component and a substrate.
【0002】[0002]
【従来の技術】従来、この種の接続ユニットとしては、
ワイヤボンディング技術の適用下で形成された突起部
(バンプ)を有する少なくとも1つの電極を備えた電子
部品と、突起部と対向する少なくとも1つの端子を備え
た電気絶縁性の基板と、突起部および端子間を電気的に
接続するハンダ等の導電性接合材と、電子部品および基
板間を接合すべく、電子部品および基板間の間隙に毛管
現象により浸入させた電気絶縁性の封止剤とを備えたも
のが知られている。2. Description of the Related Art Conventionally, as this type of connection unit,
An electronic component including at least one electrode having a protrusion (bump) formed under application of a wire bonding technique; an electrically insulating substrate including at least one terminal facing the protrusion; A conductive bonding material, such as solder, for electrically connecting terminals, and an electrically insulating sealant that has penetrated into the gap between the electronic component and the substrate by capillary action to bond the electronic component and the substrate. What is provided is known.
【0003】この封止剤は、電極の突起部、端子および
導電性接合材よりなる接続部を周囲に対して電気的に絶
縁すると共に電子部品作動後の冷却過程で電子部品と基
板との線膨脹率差に起因して前記接続部に作用する熱応
力を緩和するために用いられている。[0003] The sealant electrically insulates the projections of the electrodes, the terminals, and the connection portion made of a conductive bonding material from the surroundings, and cools the wire between the electronic component and the substrate during the cooling process after the operation of the electronic component. It is used to reduce thermal stress acting on the connection due to the difference in expansion rate.
【0004】[0004]
【発明が解決しようとする課題】しかしながら従来の接
続ユニットにおいては、電子部品および基板間の間隔が
極めて狭く、また封止剤の体積が非常に小さいので、電
子部品作動後の冷却過程で、電子部品と基板との線膨脹
率差に起因して前記接続部に熱応力が作用した場合、そ
の熱応力を十分に緩和することができず、その結果、接
続部が破断するおそれがある、といった問題がある。However, in the conventional connection unit, the distance between the electronic component and the substrate is extremely small, and the volume of the sealant is very small. When a thermal stress acts on the connecting portion due to a difference in linear expansion coefficient between the component and the board, the thermal stress cannot be sufficiently reduced, and as a result, the connecting portion may be broken. There's a problem.
【0005】[0005]
【課題を解決するための手段】本発明は、前記接続部に
作用する熱応力を十分に緩和することができる前記接続
ユニットを提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a connecting unit capable of sufficiently reducing a thermal stress acting on the connecting portion.
【0006】前記目的を達成するため本発明によれば、
突起部を有する少なくとも1つの電極を備えた電子部品
と、前記突起部と対向する少なくとも1つの端子を備え
た基板と、前記突起部および端子間を電気的に接続する
導電性接合材と、その導電性接合材を囲繞すると共に前
記電子部品および基板間を接合する電気絶縁性の封止剤
とを備え、前記突起部の直径aと、前記電子部品および
基板間における前記封止剤の厚さbとの関係をb>aに
設定し、また前記突起部先端および前記端子の間隔cを
c>0.02mmに設定し、前記導電性接合材および封止
剤は前記接合時に固化しており、その導電性接合材の硬
さが前記封止剤の硬さよりも低い接続ユニットが提供さ
れる。[0006] In order to achieve the above object, according to the present invention,
An electronic component including at least one electrode having a protrusion; a substrate including at least one terminal facing the protrusion; a conductive bonding material that electrically connects the protrusion and the terminal; An electrically insulating sealing agent that surrounds the conductive bonding material and joins the electronic component and the substrate; and a diameter a of the protrusion, and a thickness of the sealing agent between the electronic component and the substrate. The relationship with b is set to b> a, the distance c between the tip of the projection and the terminal is set to c> 0.02 mm, and the conductive bonding material and sealing are set.
The agent is solidified at the time of the joining, and the hardening of the conductive joining material is performed.
A connection unit having a hardness lower than the hardness of the sealant is provided.
【0007】前記構成の接続ユニットにおいては、電子
部品および基板間に存する封止剤の体積が大きく、また
前記間隔cが広いことから電子部品作動後の冷却過程
で、電子部品と基板との線膨脹率差に起因して前記接続
部に作用する熱応力を十分に緩和することができる。In the connection unit having the above structure, the volume of the sealant existing between the electronic component and the substrate is large, and the space c is wide. Thermal stress acting on the connecting portion due to the difference in expansion rate can be sufficiently reduced.
【0008】これは、前記線膨脹率差に起因して電子部
品および基板間の封止剤には電子部品および基板の対向
面と略平行するように横方向の剪断力が作用するが、前
記のように封止剤の体積が大きい場合にはその封止剤に
おける単位体積当りの剪断力を小さくすることができ、
また前記間隔cが広いことから、前記接続部が前記剪断
力に十分に耐えるからである。これにより、接続ユニッ
トは優れた耐熱衝撃性を有する。また上記封止剤および
導電性接合材の固化後において、導電性接合材の硬さは
封止剤の硬さよりも低いので、前記熱応力を緩和し、ま
た振動による各接続部の変形および破断を防止する上で
有効である。 This is because, due to the difference in linear expansion coefficient, a lateral shearing force acts on the sealant between the electronic component and the substrate so as to be substantially parallel to the facing surface of the electronic component and the substrate. When the volume of the sealant is large as described above, the shearing force per unit volume in the sealant can be reduced,
Also, because the interval c is wide, the connecting portion sufficiently withstands the shearing force. Thereby, the connection unit has excellent thermal shock resistance. The above sealing agent and
After the conductive bonding material is solidified, the hardness of the conductive bonding material is
Since the hardness is lower than that of the sealant, the thermal stress is reduced,
To prevent deformation and breakage of each connection due to vibration
It is valid.
【0009】[0009]
【発明の実施の形態】図1,2において、接続ユニット
1は電子部品2と、耐熱性で、且つ電気絶縁性の基板3
とを有する。この電子部品2には、未封止半導体を含む
半導体ベアチップであるFCB(フリップチップボンデ
ィング)、高密度パッケージであるCSP(チップサイ
ズパッケージ)、BGA(ボールグリットアレイ)等が
該当する。電子部品2は基板3との対向面に少なくとも
1つ、図示例では複数の電極4を備え、また基板3は電
子部品2との対向面に少なくとも1つ、図示例では電極
4の数と同数の端子5を備えている。1 and 2, a connection unit 1 includes an electronic component 2 and a heat-resistant and electrically insulating substrate 3.
And Examples of the electronic component 2 include FCB (flip chip bonding), which is a semiconductor bare chip including an unsealed semiconductor, CSP (chip size package), which is a high-density package, and BGA ( ball grid array). The electronic component 2 includes at least one electrode 4 on the surface facing the substrate 3, in the illustrated example, a plurality of electrodes 4, and the substrate 3 has at least one electrode 4 on the surface facing the electronic component 2, and the same number as the number of the electrodes 4 in the illustrated example. Are provided.
【0010】電子部品2および基板3は、加熱加圧下で
固化させた電気絶縁性の封止剤6を介して接合され、そ
の封止剤6の各接続孔7内において、電子部品2の各電
極4と基板3の各端子5とが対向する。各電極4は、金
よりなる突起部(バンプ)8を備え、その突起部8はワ
イヤボンディング技術の適用下で形成されたものであっ
て、一定の直径aを有する。各接続孔7内は、加熱加圧
下で固化させた導電性接合材9により満たされ、したが
って各導電性接合材9は封止剤6により囲繞されてい
る。このようにして各電極4の突起部8と各端子5とが
導電性接合材9を介して電気的に接続され、これら電極
4、突起部8、端子5および導電性接合材9は接続部1
0を構成する。The electronic component 2 and the substrate 3 are joined via an electrically insulating sealant 6 solidified under heating and pressurization, and each of the electronic components 2 The electrode 4 faces each terminal 5 of the substrate 3. Each of the electrodes 4 has a protrusion (bump) 8 made of gold. The protrusion 8 is formed by applying a wire bonding technique and has a constant diameter a. The inside of each connection hole 7 is filled with a conductive bonding material 9 solidified under heating and pressurization, and thus each conductive bonding material 9 is surrounded by the sealant 6. In this manner, the projection 8 of each electrode 4 and each terminal 5 are electrically connected via the conductive bonding material 9, and the electrode 4, the projection 8, the terminal 5, and the conductive bonding material 9 are 1
0.
【0011】各電極4の突起部8の直径aと、電子部品
2および基板3間における封止剤6の厚さbとの関係は
b>aに設定され、また突起部8先端および端子5間の
間隔cはc>0.02mmに設定される。The relationship between the diameter a of the projection 8 of each electrode 4 and the thickness b of the sealant 6 between the electronic component 2 and the substrate 3 is set to b> a, and the tip of the projection 8 and the terminal 5 The interval c between them is set to be c> 0.02 mm.
【0012】このように構成すると、接続ユニット1に
おいては、電子部品2および基板3間に存する封止剤6
の体積が大きく、また前記間隔が広いことから電子部品
2作動後の冷却過程で、電子部品2と基板3との線膨脹
率差に起因して前記接続部10に作用する熱応力を十分
に緩和することができる。With this configuration, in the connection unit 1, the sealing agent 6 existing between the electronic component 2 and the substrate 3
Is large and the space is large, so that in the cooling process after the operation of the electronic component 2, the thermal stress acting on the connecting portion 10 due to the difference in linear expansion coefficient between the electronic component 2 and the substrate 3 is sufficiently reduced. Can be eased.
【0013】これは、前記線膨脹率差に起因して電子部
品2および基板3間の封止剤6には電子部品2および基
板3の対向面と略平行するように横方向の剪断力が作用
するが、前記のように封止剤6の体積が大きい場合には
その封止剤6における単位体積当りの剪断力を小さくす
ることができ、また前記間隔cが広いことから、前記接
続部10が前記剪断力に十分に耐えるからである。これ
により、接続ユニット1は優れた耐熱衝撃性を有する。This is because the sealing agent 6 between the electronic component 2 and the substrate 3 has a shearing force in the lateral direction so as to be substantially parallel to the facing surfaces of the electronic component 2 and the substrate 3 due to the difference in linear expansion coefficient. However, when the volume of the sealant 6 is large as described above, the shearing force per unit volume of the sealant 6 can be reduced, and since the interval c is wide, the connection portion 10 sufficiently withstands the shearing force. Thereby, the connection unit 1 has excellent thermal shock resistance.
【0014】前記接続ユニット1の製造に当っては次の
ような実装方法が採用される。In manufacturing the connection unit 1, the following mounting method is adopted.
【0015】図3に示すように、熱硬化性で、且つ電気
絶縁性の皮膜状封止剤6を用意する。この封止剤6は、
電子部品2の複数の電極4に対応する複数の接続孔7を
有する。As shown in FIG. 3, a thermosetting and electrically insulating film-like sealant 6 is prepared. This sealant 6
The electronic component 2 has a plurality of connection holes 7 corresponding to the plurality of electrodes 4.
【0016】(i) 図4に示すように、電子部品2の複
数の電極4に対応する複数の端子5を備えた基板3を加
熱プレート11上に載せて所定の温度に加熱し、次いで
基板3上方に、皮膜状封止剤6を、その各接合孔7を各
端子5に合致させて配置する。(I) As shown in FIG. 4, a substrate 3 provided with a plurality of terminals 5 corresponding to a plurality of electrodes 4 of an electronic component 2 is placed on a heating plate 11 and heated to a predetermined temperature. Above 3, the film-like sealant 6 is arranged such that each joint hole 7 thereof matches each terminal 5.
【0017】(ii) 図5に示すように、封止剤6を基板
3に重ね合せ、次いでその封止剤6を基板3に所定の圧
力で所定時間押付けて仮接着により密着させる。(Ii) As shown in FIG. 5, the sealing agent 6 is superimposed on the substrate 3 and then the sealing agent 6 is pressed against the substrate 3 with a predetermined pressure for a predetermined time to make close contact with the substrate 3 by temporary bonding.
【0018】(iii) 図6に示すように、熱硬化性の導
電性接合材9を含有する導電性ペースト12を用いて、
封止剤6表面にスクリーン印刷を施し、その導電性ペー
スト12を各接続孔7内に充填する。その際、導電性接
合材9の固化による収縮量を考慮して、各導電性ペース
ト12の表面が各接続孔7の口縁よりも若干高くなるよ
うにする。(Iii) As shown in FIG. 6, using a conductive paste 12 containing a thermosetting conductive bonding material 9,
Screen printing is performed on the surface of the sealant 6, and the conductive paste 12 is filled in each connection hole 7. At this time, the surface of each conductive paste 12 is made slightly higher than the edge of each connection hole 7 in consideration of the amount of contraction due to solidification of the conductive bonding material 9.
【0019】(iv) 図7に示すように、基板3の温度
を上昇させ、次いで封止剤6上方に、電子部品2を、そ
の各電極4を各接続孔7に合致させて配置する。(Iv) As shown in FIG. 7, the temperature of the substrate 3 is increased, and then the electronic component 2 is arranged above the sealant 6 so that each electrode 4 of the electronic component 2 matches each connection hole 7.
【0020】(v) 図8に示すように、電子部品2にお
ける各電極4の突起部8を各接続孔7内の導電性ペース
ト12に刺込んで、その電子部品2を封止剤6に重ね合
せる。この場合、基板3の温度上昇に伴い導電性接合材
9の固化収縮が進行しているので、その導電性接合材9
の接続孔7からの食出しは回避される。次いでその電子
部品2を基板3に所定の圧力で所定時間押付けて、加熱
加圧下で封止剤6および導電性接合材9を固化させて、
電子部品2を基板3に接合する。(V) As shown in FIG. 8, the projections 8 of each electrode 4 of the electronic component 2 are stabbed into the conductive paste 12 in each connection hole 7, and the electronic component 2 is Overlap. In this case, since the solidification and contraction of the conductive bonding material 9 is progressing with the temperature rise of the substrate 3, the conductive bonding material 9
From the connection hole 7 is avoided. Next, the electronic component 2 is pressed against the substrate 3 at a predetermined pressure for a predetermined time, and the sealing agent 6 and the conductive bonding material 9 are solidified under heat and pressure.
The electronic component 2 is joined to the substrate 3.
【0021】(vi) 封止剤6を完全固化させるため、
電子部品2と基板3との接合物をオーブン内に入れて、
大気圧下、所定の温度に所定時間保持し、その後オーブ
ン内にて冷却し、接続ユニット1を得る。(Vi) In order to completely solidify the sealant 6,
Put the joint between the electronic component 2 and the substrate 3 in an oven,
The connection unit 1 is obtained by maintaining the temperature at a predetermined temperature under the atmospheric pressure for a predetermined time, and then cooling in an oven.
【0022】前記方法においては、各電極4の突起部8
および各端子5間の接続と、各接続部10への封止剤6
の付与および固化とを同一工程で行うので、電子部品2
の実装作業性を向上させてその実装コストを低減するこ
とができる。In the above method, the projection 8 of each electrode 4
And the connection between each terminal 5 and the sealant 6 to each connection portion 10
And solidification are performed in the same process, so that the electronic component 2
And the mounting cost can be reduced.
【0023】前記基板3としては複合板が用いられ、そ
の複合板は、強化材であるガラス布と、マトリックスで
あるビスマレイミドトリアジン樹脂とよりなる。A composite plate is used as the substrate 3, and the composite plate is made of a glass cloth as a reinforcing material and a bismaleimide triazine resin as a matrix.
【0024】皮膜状封止剤6は、シリカ系充填剤を含有
するノボラック型エポキシ樹脂より構成される。この樹
脂は、常温では固体であるが、加熱すると、軟化、溶融
および固化の各過程を順次経る。この樹脂のゲル化時間
は、150℃にて120秒であるが、完全に固化させる
ためには150℃にて20分間程度の時間を要する。The film-shaped sealant 6 is configured Ri by novolac epoxy resins containing a silica-based filler. This resin is solid at normal temperature, but when heated, goes through the steps of softening, melting and solidifying in sequence. The gelation time of this resin is 120 seconds at 150 ° C., but it takes about 20 minutes at 150 ° C. to completely solidify the resin.
【0025】導電性接合材9は、300メッシュよりも
小さな不定形銀粉末75重量%と脂肪族炭化水素型エポ
キシ樹脂25重量%とよりなる。導電性ペースト12
は、導電性接合材9と45.8体積%の混合溶剤とより
なり、その混合溶剤は70重量%のキシレンと30重量
%のエタノールとを混合したものである。The conductive bonding material 9 is composed of 75% by weight of amorphous silver powder smaller than 300 mesh and 25% by weight of an aliphatic hydrocarbon type epoxy resin. Conductive paste 12
Is composed of a conductive bonding material 9 and a mixed solvent of 45.8% by volume, and the mixed solvent is a mixture of 70% by weight of xylene and 30% by weight of ethanol.
【0026】脂肪族炭化水素型エポキシ樹脂は常温では
液状であるが加熱下で固化する。この樹脂のゲル化時間
は、150℃にて90〜100秒であり、前記ノボラッ
ク型エポキシ樹脂よりも短い。その際、混合溶剤は15
0℃にて60秒間位で略完全に揮発する。The aliphatic hydrocarbon type epoxy resin is liquid at room temperature, but solidifies under heating. The gel time of this resin is 90 to 100 seconds at 150 ° C., which is shorter than that of the novolak type epoxy resin. At that time, the mixed solvent is 15
Evaporates almost completely at 0 ° C. in about 60 seconds.
【0027】このように導電性接合材9のゲル化時間を
封止剤6のゲル化時間よりも短くすると、封止剤6が先
にゲル化した場合に起る、導電性接合材9内への気泡の
封じ込めを防止することができ、これにより各電極4の
突起部8と各端子5との接続不良を回避することができ
る。When the gelation time of the conductive bonding material 9 is shorter than the gelation time of the sealant 6 as described above, the conductive bonding material 9 that is formed when the sealant 6 gels first may be formed. It is possible to prevent the air bubbles from being trapped in the electrodes 4, thereby making it possible to avoid a poor connection between the projection 8 of each electrode 4 and each terminal 5.
【0028】また固化後において、導電性接合材9は柔
軟性を有し、その硬さは、封止剤6の硬さよりも低い。
これは、前記熱応力を緩和し、また振動による各接続部
10の変形および破断を防止する上で有効である。After solidification, the conductive bonding material 9 has flexibility, and its hardness is lower than the hardness of the sealant 6.
This is effective in relieving the thermal stress and preventing deformation and breakage of each connection portion 10 due to vibration.
【0029】皮膜状封止剤6の接続孔7の形成は、孔無
しの皮膜状封止剤6を基板3に密着させた後に行っても
よい。The formation of the connection holes 7 of the film-shaped sealant 6 may be performed after the film-shaped sealant 6 without holes is brought into close contact with the substrate 3.
【0030】この観点から封止剤6の構成材料として
は、例えば紫外線硬化型樹脂である、多官能アクリレー
トモノマを含有する液状エポキシアクリレート樹脂、多
官能アクリレートモノマを含有する液状ポリエステルア
クリレート樹脂等を用いることもできる。From this viewpoint, as a constituent material of the sealing agent 6, for example, a liquid epoxy acrylate resin containing a polyfunctional acrylate monomer, a liquid polyester acrylate resin containing a polyfunctional acrylate monomer, or the like, which is an ultraviolet curable resin, is used. You can also.
【0031】また必要に応じて皮膜状封止剤6と電子部
品2との間に、熱硬化性の接着剤である高接着力液状エ
ポキシ樹脂を介在させる。前記導電性接合材9としては
ハンダ粉末を用いることも可能である。[0031] Between the film-like sealant 6 and the electronic component 2 if necessary, to interpose a high adhesive strength liquid epoxy resins is a thermosetting adhesive. As the conductive bonding material 9, a solder powder can be used.
【0032】以下、接続ユニット1の具体的製造例につ
いて説明する。Hereinafter, a specific example of manufacturing the connection unit 1 will be described.
【0033】〔製造例1〕 (i) シリカ系充填材を含有するノボラック型エポキシ
樹脂を用いてトランスファ成形を行い、縦11mm、横1
1mm、厚さ0.2mmの皮膜状封止剤6を成形した。[Production Example 1] (i) Transfer molding was performed using a novolak-type epoxy resin containing a silica-based filler, and was 11 mm long and 1 mm wide.
A film-like sealant 6 having a thickness of 1 mm and a thickness of 0.2 mm was formed.
【0034】(ii) 図3に示すように、電子部品2の、
例えば32個の電極4および前記構造を有する基板3の
同数の端子5に対応して、封止剤6にエキシマレーザに
より32個の直径dがd=0.14mmの接続孔7を形成
した。(Ii) As shown in FIG.
For example, corresponding to 32 electrodes 4 and the same number of terminals 5 of the substrate 3 having the above structure, 32 connection holes 7 having a diameter d of d = 0.14 mm were formed in the sealant 6 by an excimer laser.
【0035】(iii) 図4に示すように、基板3を加熱
プレート11上に載せて120℃に加熱し、次いで基板
3上方に封止剤6を、その各接続孔7を各端子5に合致
させて配置した。(Iii) As shown in FIG. 4, the substrate 3 is placed on a heating plate 11 and heated to 120 ° C. Then, a sealant 6 is placed above the substrate 3 and each connection hole 7 is connected to each terminal 5. Matched and placed.
【0036】(iv) 図5に示すように、封止剤6を基
板3に重ね合せ、次いでその封止剤6を基板3に80g
f/cm2 の圧力で10秒間押付けて仮接着により密着さ
せた。(Iv) As shown in FIG. 5, the sealant 6 is overlaid on the substrate 3 and then the sealant 6 is applied to the substrate 3 by 80 g.
It was pressed at a pressure of f / cm 2 for 10 seconds and adhered by temporary bonding.
【0037】(v) 図6に示すように、前記組成の導電
性ペースト(混合溶剤量A=45.8体積%)12およ
び♯200メッシュスクリーン(乳剤厚10μm)を用
いて、封止剤6表面にスクリーン印刷を施し、その導電
性ペースト12を各接続孔7に充填した。この場合、導
電性ペースト12の表面は接続孔7の口縁よりも0.1
mm高い。つまり、接続孔7の深さeはe=0.2mmおよ
び端子5の厚さfはf=0.018mmであって、導電性
ペースト12の高さgはg=0.192mmである。(V) As shown in FIG. 6, using a conductive paste (mixed solvent amount A = 45.8% by volume) 12 of the above composition and a # 200 mesh screen (emulsion thickness 10 μm), sealing agent 6 The surface was subjected to screen printing, and the conductive paste 12 was filled in each connection hole 7. In this case, the surface of the conductive paste 12 is more than the edge of the connection hole 7 by 0.1.
mm higher. That is, the depth e of the connection hole 7 is e = 0.2 mm, the thickness f of the terminal 5 is f = 0.018 mm, and the height g of the conductive paste 12 is g = 0.192 mm.
【0038】(vi) 図7に示すように、基板3の温度
を150℃に上昇させ、次いで封止剤6上方に電子部品
2を、その各電極4を各接続孔7に合致させて配置し
た。(Vi) As shown in FIG. 7, the temperature of the substrate 3 is raised to 150 ° C., and then the electronic component 2 is placed above the sealant 6 with its electrodes 4 aligned with the connection holes 7. did.
【0039】(vii) 図2に示すように、電子部品2に
おける各電極4の突起部8の直径aはa=0.14mm、
突出長さ(電極4の厚さを含む。以下同じ)hはh=
0.111mmである。図8に示すように、各突起部8を
各接続孔7内の導電性ペースト12に刺込んで、その電
子部品2を封止剤6に重ね合せ、次いでその電子部品2
を基板3に200gf/cm2 の圧力で20秒間押付け
て、加熱加圧下で封止剤6および導電性接合材9を固化
させて、電子部品2を基板3に接合した。(Vii) As shown in FIG. 2, the diameter a of the projection 8 of each electrode 4 in the electronic component 2 is a = 0.14 mm,
The protrusion length h (including the thickness of the electrode 4; the same applies hereinafter) h = h
0.111 mm. As shown in FIG. 8, each projection 8 is stabbed into the conductive paste 12 in each connection hole 7, the electronic component 2 is overlaid on the sealant 6, and then the electronic component 2 is
Was pressed against the substrate 3 at a pressure of 200 gf / cm 2 for 20 seconds to solidify the sealant 6 and the conductive bonding material 9 under heat and pressure, thereby bonding the electronic component 2 to the substrate 3.
【0040】(viii) 封止剤6を完全固化させるた
め、電子部品2と基板3との接合物をオーブン内に入れ
て、大気圧下、150℃にて20分間保持し、その後オ
ーブン内にて冷却し、接続ユニット1(実施例)を得
た。(Viii) In order to completely solidify the sealant 6, the joined body of the electronic component 2 and the substrate 3 is placed in an oven, kept at 150 ° C. under atmospheric pressure for 20 minutes, and then placed in the oven. And cooled to obtain a connection unit 1 (Example).
【0041】この接続ユニット1において、電子部品2
の線膨脹率は2.7×10-6/℃、一方、基板3の線膨
脹率は1.4×10-5/℃である。また図2に示すよう
に、電子部品2および基板3間における封止剤6の厚さ
bはb=0.166mm、突起部8先端および端子5間の
間隔cはc=0.037mm、封止剤6の硬さ(ショア硬
さ)は91HSDおよび導電性接合材9の硬さ(ショア
硬さ)は80HSDであった。なお、前記のように、接
続孔7の直径dはd=0.14mm、突起部8の直径aは
a=0.14mm、その突出長さhはh=0.111mmお
よび端子5の厚さfはf=0.018mmである。In this connection unit 1, the electronic component 2
Has a linear expansion coefficient of 2.7 × 10 −6 / ° C., while the linear expansion coefficient of the substrate 3 is 1.4 × 10 −5 / ° C. As shown in FIG. 2, the thickness b of the sealing agent 6 between the electronic component 2 and the substrate 3 is b = 0.166 mm, the distance c between the tip of the projection 8 and the terminal 5 is c = 0.037 mm, The hardness (Shore hardness) of the blocking agent 6 was 91 HSD, and the hardness (Shore hardness) of the conductive bonding material 9 was 80 HSD. As described above, the diameter d of the connection hole 7 is d = 0.14 mm, the diameter a of the projection 8 is a = 0.14 mm, the projection length h is h = 0.111 mm, and the thickness of the terminal 5 is f is 0.018 mm.
【0042】比較のため導電性ペースト12において、
その混合溶剤量Aを変えて、前記(i) 〜(viii)工程を行
うことにより複数の接続ユニット1を得た。For comparison, in the conductive paste 12,
By changing the mixed solvent amount A and performing the above-mentioned steps (i) to (viii), a plurality of connection units 1 were obtained.
【0043】これら接続ユニット1について、各電極4
の突起部8と各導電性接合材9との接触状態を調べたと
ころ、表1の結果を得た。表1には、前記接続ユニット
1(実施例)が例3として掲載されている。For these connection units 1, each electrode 4
When the contact state between the projection 8 and each conductive bonding material 9 was examined, the results shown in Table 1 were obtained. Table 1 lists the connection unit 1 (Example) as Example 3.
【0044】[0044]
【表1】 [Table 1]
【0045】突起部8および接続孔7の寸法、導電性ペ
ースト12の接続孔7への充電後の高さ等を前記のよう
に設定した場合において、表1に示すように、例2〜4
のごとく、導電性ペースト12の混合溶剤量Aを、2
9.2体積%≦A≦58.3体積%に設定すると、電極
4の突起部8と導電性接合材9との接触状態を良好に
し、また導電性接合材9の接続孔7からの食出しを防止
することができる。この場合、混合溶剤量Aは、好まし
くは30体積%≦A≦55体積%である。When the dimensions of the projection 8 and the connection hole 7 and the height of the conductive paste 12 after charging the connection hole 7 are set as described above, as shown in Table 1, Examples 2 to 4
As described above, the mixed solvent amount A of the conductive paste 12 is 2
When 9.2% by volume ≦ A ≦ 58.3% by volume, the contact state between the protruding portion 8 of the electrode 4 and the conductive bonding material 9 is improved, and the conductive bonding material 9 is eroded from the connection hole 7. Can be prevented. In this case, the mixed solvent amount A is preferably 30% by volume ≦ A ≦ 55% by volume.
【0046】例1の場合は、導電性接合材9の量が少な
過ぎるため、その固化収縮に伴い、突起部8と導電性接
合材9との間に間隙が生じる。例5の場合は、導電性接
合材9の量が多過ぎるため、それが接続孔7から食出し
て相隣る両電極4間を短絡するおそれがある。In the case of Example 1, since the amount of the conductive bonding material 9 is too small, a gap is generated between the projection 8 and the conductive bonding material 9 due to the solidification and shrinkage. In the case of Example 5, since the amount of the conductive bonding material 9 is too large, the conductive bonding material 9 may erode from the connection hole 7 and short-circuit between the two adjacent electrodes 4.
【0047】なお、表1の例2,4において、前記厚さ
b、間隔cおよび両硬さ(HSD)は例3のそれらと同
じである。In Examples 2 and 4 of Table 1, the thickness b, the interval c and the hardness (HSD) are the same as those of Example 3.
【0048】次に、前記同様の方法で、電子部品2およ
び基板3間における封止剤6の厚さb、突起部8の突出
長さh、突起部8先端および端子5間の間隔cならびに
封止剤6および導電性接合材9の硬さを異にする各種接
続ユニット1を得た。封止剤6の厚さbおよび前記間隔
cの変化は、前記(vii)工程における圧力を変えること
によって行われ、また突起部8の突出長さhの変化はそ
の突起部8の形成条件を変えることによって行われ、さ
らに封止剤6および導電性接合材9の硬さは硬化剤量を
変えることによって行われた。Next, in the same manner as described above, the thickness b of the sealant 6 between the electronic component 2 and the substrate 3, the length h of the protrusion 8, the distance c between the tip of the protrusion 8 and the terminal 5, and Various connection units 1 having different hardnesses of the sealing agent 6 and the conductive bonding material 9 were obtained. The thickness b of the sealant 6 and the interval c are changed by changing the pressure in the step (vii), and the change in the projection length h of the projection 8 depends on the formation condition of the projection 8. The hardness of the sealant 6 and the conductive bonding material 9 was further changed by changing the amount of the curing agent.
【0049】次いで、各接続ユニット1について熱衝撃
試験を行った。試験条件は、各接続ユニット1を−40
℃のシリコーンオイルに5分間浸漬し、次いで120℃
のシリコーンオイルに5分間浸漬し、これを1サイクル
として繰返した。Next, a thermal shock test was performed on each connection unit 1. The test conditions were such that each connection unit 1 was -40.
5 minutes in silicone oil at 120 ° C, then 120 ° C
Of silicone oil for 5 minutes, and this was repeated as one cycle.
【0050】表2は、各接続ユニット1における封止剤
6の厚さb、突起部8の直径a、突起部8先端および端
子5間の間隔c、突起部8の突出長さh、端子5の厚さ
f、封止剤6および導電性接合材9の硬さ(HSD)、
ならびに熱衝撃試験における評価を示す。この評価にお
いて、「○」印は、5000サイクルにて封止剤6の外
観に異常が生じて無かったことを示し、また「△」印は
5000サイクルにて封止剤6の一部にクラックが生じ
たことを示し、さらに「×」印は4000サイクルにて
封止剤6にクラックが発生したことを示す。表2には、
表1の例3が例1として掲載されている。Table 2 shows the thickness b of the sealant 6, the diameter a of the projection 8, the distance c between the tip of the projection 8 and the terminal 5, the projection length h of the projection 8, the terminal h in each connection unit 1. 5, the hardness (HSD) of the sealant 6 and the conductive bonding material 9;
Also shows the evaluation in the thermal shock test. In this evaluation, the mark “○” indicates that no abnormality occurred in the appearance of the sealant 6 at 5000 cycles, and the mark “△” indicates that a part of the sealant 6 was cracked at 5000 cycles. And "x" indicates that the sealant 6 had cracks in 4000 cycles. In Table 2,
Example 3 in Table 1 is listed as Example 1.
【0051】[0051]
【表2】 [Table 2]
【0052】表2において、一定値となる突起部8の直
径aを基準にした場合、封止剤6の厚さbをb>aに設
定し、また突起部8先端および端子5間の間隔cをc>
0.02mmに設定すると、例1,2,6,7のように前
記のような厳しい熱衝撃試験においても優れた耐久性を
発揮する。これは、封止剤6の体積が大きく、また前記
間隔cが広いことから電子部品2と基板3との線膨脹率
差に起因した熱応力を十分に緩和し得るからである。こ
の場合、例1,2,6,7は導電性接合材の硬さが封止
剤のそれよりも低い、という条件も満足している。In Table 2, the thickness b of the sealant 6 is set to b> a, and the distance between the tip of the projection 8 and the terminal 5 is determined based on the diameter a of the projection 8 which is a constant value. c to c>
When it is set to 0.02 mm, excellent durability is exhibited even in the severe thermal shock test as described above as in Examples 1, 2, 6, and 7. This is because the sealing agent 6 has a large volume and the space c is large, so that the thermal stress caused by a difference in linear expansion coefficient between the electronic component 2 and the substrate 3 can be sufficiently reduced. In this case, Examples 1, 2, 6, and 7 also satisfy the condition that the hardness of the conductive bonding material is lower than that of the sealant.
【0053】例3,5においては前記直径aと厚さbの
関係がb<aであり、また例4においては前記間隔cが
c<0.02mmであることから、例3〜5は耐熱衝撃性
が低い。In Examples 3 and 5, the relationship between the diameter a and the thickness b is b <a, and in Example 4, the distance c is c <0.02 mm. Low impact.
【0054】例8においては封止剤6の厚さbおよび前
記間隔cについては問題はないが、導電性接合材9の硬
さが封止剤6のそれよりも大であることから、前記のよ
うな厳しい熱衝撃試験に対しては耐久性が若干低くな
る。In Example 8, there is no problem with the thickness b of the sealant 6 and the distance c, but since the hardness of the conductive bonding material 9 is larger than that of the sealant 6, , The durability is slightly lower.
【0055】〔製造例2〕 (i) シリカ系充填材を含有するノボラック型エポキシ
樹脂を用いてトランスファ成形を行い、縦11mm、横1
1mm、厚さ0.2mmの皮膜状封止剤6を成形した。[Production Example 2] (i) Transfer molding was performed using a novolak-type epoxy resin containing a silica-based filler, and was 11 mm long and 1 mm wide.
A film-like sealant 6 having a thickness of 1 mm and a thickness of 0.2 mm was formed.
【0056】(ii) 図9(a)に示すように、基板3を
加熱プレート11上に載せて120℃に加熱し、次いで
基板3上方に封止剤6を、その封止剤6により全部の端
子5が覆われるように配置した。(Ii) As shown in FIG. 9A, the substrate 3 is placed on the heating plate 11 and heated to 120 ° C. Then, the sealing agent 6 is entirely placed on the substrate 3 by the sealing agent 6. Are arranged such that the terminal 5 is covered.
【0057】(iii) 図9(b)に示すように、封止剤
6を基板3に重ね合せ、次いでその封止剤6を基板3に
80gf/cm2 の圧力で10秒間押付けて仮接着により
密着させ、その後、電子部品2の32個の電極4および
前記構造を有する基板3の同数の端子5に対応して、封
止剤6にエキシマレーザにより32個の直径dがd=
0.14mmの接続孔7を形成した。(Iii) As shown in FIG. 9 (b), the sealing agent 6 is superimposed on the substrate 3, and then the sealing agent 6 is pressed against the substrate 3 at a pressure of 80 gf / cm 2 for 10 seconds to temporarily adhere the same. Then, corresponding to the 32 electrodes 4 of the electronic component 2 and the same number of terminals 5 of the substrate 3 having the above structure, 32 diameters d of the sealant 6 are changed to d = d by an excimer laser.
A connection hole 7 of 0.14 mm was formed.
【0058】以後、製造例1の (v)〜(viii)工程(図
6〜8参照)を順次行って、接続ユニット1を得た。Thereafter, the steps (v) to (viii) of Production Example 1 (see FIGS. 6 to 8) were sequentially performed to obtain a connection unit 1.
【0059】〔製造例3〕 (i) 図10(a)に示すように、表面に32個の端子5
を有する基板3を加熱プレート11上に載せ、次いで基
板3表面に、紫外線硬化型樹脂である、多官能アクリレ
ートモノマを含有する液状エポキシアクリレート樹脂を
用いてスクリーン印刷を施し、これにより、皮膜状封止
剤6を形成すると共にその封止剤6により全部の端子5
を被覆した。この封止剤6の寸法は縦11mm、横11m
m、厚さ0.2mmである。[Manufacturing Example 3] (i) As shown in FIG.
Is placed on the heating plate 11, and then screen printing is performed on the surface of the substrate 3 using a liquid epoxy acrylate resin containing a polyfunctional acrylate monomer, which is an ultraviolet curable resin, thereby forming a film-like seal. A stopper 6 is formed and all the terminals 5 are formed by the sealant 6.
Was coated. The dimensions of this sealant 6 are 11 mm in length and 11 m in width.
m, thickness 0.2 mm.
【0060】(ii) 図10(b)に示すように、封止剤
6における基板3上の各端子5に対応する部分に各接続
孔7を形成すべく、封止剤6の各対応部分を除く残りの
部分に紫外線を照射して、その残りの部分を固化させ、
その後未固化部分を洗浄により除去した。このようにし
て得られた各接続孔7の直径dはd=0.14mmであっ
た。(Ii) As shown in FIG. 10B, each corresponding portion of the sealant 6 is formed to form each connection hole 7 in a portion of the sealant 6 corresponding to each terminal 5 on the substrate 3. Irradiate the remaining part with ultraviolet rays, and solidify the remaining part,
Thereafter, the unsolidified portion was removed by washing. The diameter d of each connection hole 7 thus obtained was d = 0.14 mm.
【0061】(iii) 図10(c)に示すように、前記
組成の導電性ペースト(混合溶剤量A=45.8体積
%)12および♯200メッシュスクリーン(乳材厚1
0μm)を用いて、封止剤6表面にスクリーン印刷を施
し、その導電性ペースト12を各接続孔7に充填した。
この場合、導電性ペースト12の表面は接続孔7の口縁
よりも0.1mm高い。つまり導電性ペースト12の高さ
gは製造例1同様にg=0.192mmである。(Iii) As shown in FIG. 10 (c), a conductive paste (mixed solvent amount A = 45.8% by volume) 12 of the above composition and a # 200 mesh screen (milk material thickness 1)
(0 μm), screen printing was performed on the surface of the sealant 6, and the conductive paste 12 was filled in each connection hole 7.
In this case, the surface of the conductive paste 12 is higher than the edge of the connection hole 7 by 0.1 mm. That is, the height g of the conductive paste 12 is g = 0.192 mm as in the case of Production Example 1.
【0062】(iv) 図10(d)に示すように、基板
3を150℃に加熱し、次いで封止剤6上方に電子部品
2を、その各電極4を各接続孔7に合致させて配置し
た。(Iv) As shown in FIG. 10 (d), the substrate 3 is heated to 150 ° C., the electronic component 2 is placed above the sealant 6, and each electrode 4 is aligned with each connection hole 7. Placed.
【0063】(v) 図2に示すように、電子部品2にお
ける各電極4の突起部8の直径aはa=0.14mm、突
出長さhはh=0.111mmである。図10(e)に示
すように、各突起部8を各接続孔7内の導電性ペースト
12に刺込んで、その電子部品2を封止剤6に重ね合
せ、次いでその電子部品2を基板3に170gf/cm2
の圧力で約30秒間押付けて、加熱加圧下で封止剤6お
よび導電性接合材9を固化させて、電子部品2を基板3
に接合した。(V) As shown in FIG. 2, the diameter a of the projection 8 of each electrode 4 in the electronic component 2 is a = 0.14 mm, and the projection length h is h = 0.111 mm. As shown in FIG. 10E, each projection 8 is stabbed into the conductive paste 12 in each connection hole 7, the electronic component 2 is superimposed on the sealant 6, and then the electronic component 2 is mounted on the substrate. 170gf / cm 2 for 3
Pressure for about 30 seconds to solidify the sealant 6 and the conductive bonding material 9 under heat and pressure, and to attach the electronic component 2 to the substrate 3.
Joined.
【0064】(vi) 封止剤6を完全固化させるため、
電子部品2と基板3との接合物をオーブン内に入れて、
大気圧下、150℃にて20分間保持し、その後オーブ
ン内にて冷却し、接続ユニット1を得た。この接続ユニ
ット1においても、固化後の導電性接合材9の硬さは封
止剤6の硬さよりも低い。(Vi) In order to completely solidify the sealant 6,
Put the joint between the electronic component 2 and the substrate 3 in an oven,
It was kept at 150 ° C. under atmospheric pressure for 20 minutes, and then cooled in an oven to obtain a connection unit 1. Also in the connection unit 1, the hardness of the conductive bonding material 9 after solidification is lower than the hardness of the sealant 6.
【0065】〔製造例4〕封止剤6の材質によっては、
電子部品2を基板3に接合することができない場合があ
る。このような場合には次のような実装方法を行う。[Production Example 4] Depending on the material of the sealant 6,
There are cases where the electronic component 2 cannot be joined to the substrate 3. In such a case, the following mounting method is performed.
【0066】(i) 図11(a)に示すように、表面に
32個の端子5を有する基板3を加熱プレート11上に
載せ、次いで基板3表面に、紫外線硬化型樹脂である、
多官能アクリレートモノマを含有する液状ポリエステル
アクリレート樹脂を用いてスクリーン印刷を施し、これ
により、皮膜状封止剤6を形成すると共にその封止剤6
により全部の端子5を被覆した。この封止剤6の寸法は
縦11mm、横11mm、厚さ0.2mmである。(I) As shown in FIG. 11A, the substrate 3 having 32 terminals 5 on the surface is placed on the heating plate 11, and then the surface of the substrate 3 is made of an ultraviolet curable resin.
Screen printing is performed using a liquid polyester acrylate resin containing a polyfunctional acrylate monomer, thereby forming a film-like sealing agent 6 and forming the film-forming sealing agent 6.
Covered all the terminals 5. The dimensions of the sealant 6 are 11 mm in length, 11 mm in width, and 0.2 mm in thickness.
【0067】(ii) 図11(b)に示すように、封止剤
6における基板3上の各端子5に対応する部分に各接続
孔7を形成すべく、封止剤6の各対応部分を除く残りの
部分に紫外線を照射して、その残りの部分を固化させ、
その後未固化部分を洗浄により除去した。このようにし
て得られた各接続孔7の直径dはd=0.14mmであっ
た。(Ii) As shown in FIG. 11B, each corresponding portion of the sealing agent 6 is formed to form each connection hole 7 in a portion of the sealing agent 6 corresponding to each terminal 5 on the substrate 3. Irradiate the remaining part with ultraviolet rays, and solidify the remaining part,
Thereafter, the unsolidified portion was removed by washing. The diameter d of each connection hole 7 thus obtained was d = 0.14 mm.
【0068】(iii) 図11(c)に示すように、前記
組成の導電性ペースト(混合溶剤量A=45.8体積
%)12および♯200メッシュスクリーン(乳剤厚1
0μm)を用いて、封止剤6表面にスクリーン印刷を施
し、その導電性ペースト12を各接続孔7に充填した。
この場合、導電性ペースト12の表面は接続孔7の口縁
よりも0.1mm高い。つまり導電性ペースト12の高さ
gは製造例1同様にg=0.192mmである。(Iii) As shown in FIG. 11C, the conductive paste 12 having the above composition (mixed solvent amount A = 45.8% by volume) and a # 200 mesh screen (emulsion thickness 1
(0 μm), screen printing was performed on the surface of the sealant 6, and the conductive paste 12 was filled in each connection hole 7.
In this case, the surface of the conductive paste 12 is higher than the edge of the connection hole 7 by 0.1 mm. That is, the height g of the conductive paste 12 is g = 0.192 mm as in the case of Production Example 1.
【0069】(iv) 図11(d)に示すように、容器
13内に50cPといった低粘度の高接着力液状エポキ
シ樹脂14を用意し、その樹脂14に電子部品2の電極
4を有する面を接触させて、その面に前記樹脂14を極
薄く塗布した。(Iv) As shown in FIG. 11D, a low-viscosity liquid epoxy resin 14 having a low viscosity of 50 cP is prepared in a container 13, and the surface of the electronic component 2 having the electrodes 4 is provided on the resin 14. The resin 14 was applied very thinly on the surface by contact.
【0070】(v) 図11(e)に示すように、基板3
を150℃に加熱し、次いで封止剤6上方に電子部品2
を、その各電極4を各接続孔7に合致させて配置した。(V) As shown in FIG.
Is heated to 150 ° C., and then the electronic component 2
Were arranged so that each electrode 4 matched each connection hole 7.
【0071】(vi) 図2に示すように、電子部品2に
おける各電極4の突起部8の直径aはa=0.14mm、
突出長さhはh=0.111mmである。図11(f)に
示すように、各突起部8を各接続孔7内の導電性ペース
ト12に刺込んで、その電子部品2を封止剤6に重ね合
せた。各突起部8の導電性ペースト12への刺込み中
に、その突起部8表面に付着している高接着力エポキシ
樹脂14は導電性ペースト12によりしごかれて突起部
8表面より除去される。次いでその電子部品2を基板3
に100gf/cm2 の圧力で約90秒間押付けて、加熱
加圧下で封止剤6、導電性接合材9および高接着力液状
エポキシ樹脂14を固化させて、電子部品2を基板3に
接合した。(Vi) As shown in FIG. 2, the diameter a of the projection 8 of each electrode 4 in the electronic component 2 is a = 0.14 mm,
The protrusion length h is h = 0.111 mm. As shown in FIG. 11 (f), each projection 8 was stabbed into the conductive paste 12 in each connection hole 7, and the electronic component 2 was overlaid on the sealant 6. While each projection 8 is stabbed into the conductive paste 12, the high adhesive epoxy resin 14 attached to the surface of the projection 8 is squeezed by the conductive paste 12 and removed from the surface of the projection 8. . Next, the electronic component 2 is attached to the substrate 3
The electronic component 2 was bonded to the substrate 3 by pressing the substrate at a pressure of 100 gf / cm 2 for about 90 seconds to solidify the sealant 6, the conductive bonding material 9 and the high-adhesion liquid epoxy resin 14 under heat and pressure. .
【0072】(vii) 封止剤6を完全固化させるため、
電子部品2と基板3との接合物をオーブン内に入れて、
大気圧下、150℃にて60分間保持し、その後オーブ
ン内にて冷却し、接続ユニット1を得た。(Vii) In order to completely solidify the sealant 6,
Put the joint between the electronic component 2 and the substrate 3 in an oven,
It was kept at 150 ° C. under atmospheric pressure for 60 minutes, and then cooled in an oven to obtain a connection unit 1.
【0073】前記高接着力液状エポキシ樹脂14は、電
子部品2に塗布する代りに、封止剤6表面にスクリーン
印刷により塗布してもよい。この場合、前記樹脂14の
膜厚は5μmが適当である。The liquid epoxy resin 14 having a high adhesive strength may be applied to the surface of the sealant 6 by screen printing instead of being applied to the electronic component 2. In this case, the film thickness of the resin 14 is suitably 5 μm.
【0074】[0074]
【発明の効果】本発明によれば、前記のように構成する
ことによって、優れた耐熱衝撃性を備えた電子部品と基
板との接続ユニットを提供することができる。また電子
部品作動後の冷却過程で、電子部品と基板との線膨脹率
差に起因して接続部に作用する熱応力を緩和し、また振
動による各接続部の変形および破断を防止する上で有効
である。 According to the present invention, with the above-described structure, it is possible to provide a connection unit between an electronic component and a substrate having excellent thermal shock resistance. Also electronic
In the cooling process after the operation of components, the linear expansion coefficient between the electronic component and the substrate
The thermal stress acting on the connection due to the difference is reduced and
Effective in preventing deformation and breakage of each connection due to movement
It is.
【図1】接続ユニットの正面図である。FIG. 1 is a front view of a connection unit.
【図2】図1の2矢示部の拡大断面図である。FIG. 2 is an enlarged sectional view of a portion indicated by an arrow 2 in FIG.
【図3】皮膜状封止剤の斜視図である。FIG. 3 is a perspective view of a film-like sealant.
【図4】接続ユニット製造方法の第1例において、基板
上方に皮膜状封止剤を配置した状態を示す説明図であ
る。FIG. 4 is an explanatory view showing a state in which a film-like sealant is disposed above a substrate in the first example of the method of manufacturing a connection unit.
【図5】接続ユニット製造方法の第1例において、基板
に皮膜状封止剤を重ね合せた状態を示す説明図である。FIG. 5 is an explanatory view showing a state in which a film-like sealant is overlaid on a substrate in the first example of the method of manufacturing a connection unit.
【図6】接続ユニット製造方法の第1例において、皮膜
状封止剤の各接続孔に導電性ペーストを充填した状態を
示す説明図である。FIG. 6 is an explanatory view showing a state in which a conductive paste is filled into each connection hole of the film-like sealing agent in the first example of the connection unit manufacturing method.
【図7】接続ユニット製造方法の第1例において、皮膜
状封止剤上方に電子部品を配置した状態を示す説明図で
ある。FIG. 7 is an explanatory view showing a state in which an electronic component is arranged above the film-like sealant in the first example of the connection unit manufacturing method.
【図8】接続ユニット製造方法の第1例において、電子
部品を皮膜状封止剤に重ね合せた状態を示す説明図であ
る。FIG. 8 is an explanatory view showing a state in which an electronic component is superimposed on a film-like sealant in the first example of the method of manufacturing a connection unit.
【図9】接続ユニット製造方法の第2例の工程図であ
る。FIG. 9 is a process chart of a second example of the connection unit manufacturing method.
【図10】接続ユニット製造方法の第3例の工程図であ
る。FIG. 10 is a process chart of a third example of the connection unit manufacturing method.
【図11】接続ユニット製造方法の第4例の工程図であ
る。FIG. 11 is a process chart of a fourth example of the connection unit manufacturing method.
2 電子部品 3 基板 4 電極 5 端子 6 封止剤 8 突起部 9 導電性接合材 14 高接着力液状エポキシ樹脂(接着剤) a 直径 b 厚さ c 間隔 2 Electronic component 3 Substrate 4 Electrode 5 Terminal 6 Sealant 8 Projection 9 Conductive bonding material 14 High adhesive liquid epoxy resin (adhesive) a Diameter b Thickness c Interval
Claims (2)
電極(4)を備えた電子部品(2)と、前記突起部
(8)と対向する少なくとも1つの端子(5)を備えた
基板(3)と、前記突起部(8)および端子(5)間を
電気的に接続する導電性接合材(9)と、その導電性接
合材(9)を囲繞すると共に前記電子部品(2)および
基板(3)間を接合する電気絶縁性の封止剤(6)とを
備え、前記突起部(8)の直径aと、前記電子部品
(2)および基板(3)間における前記封止剤(6)の
厚さbとの関係をb>aに設定し、また前記突起部
(8)先端および前記端子(5)の間隔cをc>0.0
2mmに設定し、前記導電性接合材(9)および封止剤
(6)は前記接合時に固化しており、その導電性接合材
(9)の硬さは、前記封止剤(6)の硬さよりも低いこ
とを特徴とする、電子部品と基板との接続ユニット。An electronic component (2) including at least one electrode (4) having a projection (8), and a substrate (20) including at least one terminal (5) facing the projection (8). 3), a conductive bonding material (9) for electrically connecting the protrusion (8) and the terminal (5), and the electronic component (2) surrounding the conductive bonding material (9). An electrically insulating sealant (6) for bonding between the substrates (3); a diameter a of the projection (8); and the sealant between the electronic component (2) and the substrate (3). The relationship between the thickness (b) and (6) is set to b> a, and the distance c between the tip of the projection (8) and the terminal (5) is set to c> 0.0.
The conductive bonding material (9) and the sealant are set to 2 mm.
(6) is solidified at the time of the joining, and the conductive joining material
The connection unit between an electronic component and a substrate , wherein the hardness of (9) is lower than the hardness of the sealant (6) .
電極(4)を備えた電子部品(2)と、前記突起部
(8)と対向する少なくとも1つの端子(5)を備えた
基板(3)と、前記突起部(8)および端子(5)間を
電気的に接続する導電性接合材(9)と、前記導電性接
合材(9)を囲繞すると共に前記基板(3)に接合され
た電気絶縁性の封止剤(6)と、前記電子部品(2)お
よび封止剤(6)間を接合する接着剤(14)とを備
え、前記突起部(8)の直径aと、前記電子部品(2)
および基板(3)間における前記封止剤(6)の厚さb
との関係をb>aに設定し、また前記突起部(8)先端
および前記端子(5)の間隔cをc>0.02mmに設定
し、前記導電性接合材(9)および封止剤(6)は前記
接合時に固化しており、その導電性接合材(9)の硬さ
は、前記封止剤(6)の硬さよりも低いことを特徴とす
る、電子部品と基板との接続ユニット。2. An electronic component (2) provided with at least one electrode (4) having a projection (8), and a substrate provided with at least one terminal (5) facing said projection (8). 3), a conductive bonding material (9) for electrically connecting the protrusions (8) and the terminals (5), and surrounding the conductive bonding material (9) and bonding to the substrate (3). And a bonding agent (14) for joining the electronic component (2) and the sealing agent (6), and a diameter a of the projection (8). , The electronic component (2)
And the thickness b of the sealing agent (6) between the substrates (3)
Is set to b> a, the distance c between the tip of the projection (8) and the terminal (5) is set to c> 0.02 mm, and the conductive bonding material (9) and the sealing agent are set. (6) is the above
Hardened at the time of joining, the hardness of the conductive joining material (9)
Is a connection unit between an electronic component and a substrate , wherein the hardness is lower than the hardness of the sealant (6) .
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19212096A JP2952814B2 (en) | 1996-07-22 | 1996-07-22 | Connection unit between electronic components and board |
PCT/JP1997/002518 WO1998004000A1 (en) | 1996-07-22 | 1997-07-22 | Plug-in type electronic control unit, connecting structure between wiring board and plug member, connecting unit between electronic parts and wiring board, and electronic parts mounting method |
EP97930854A EP0853342B1 (en) | 1996-07-22 | 1997-07-22 | Connecting structure between wiring board and plug member |
US09/042,989 US6720500B1 (en) | 1996-07-22 | 1997-07-22 | Plug-in type electronic control unit, structure of connection of wiring board with plug member, unit of connection of electronic part with wiring board, and process for mounting electronic part |
DE69738289T DE69738289D1 (en) | 1996-07-22 | 1997-07-22 | CONNECTION BETWEEN CONDUCTOR PLATE AND CONNECTOR ELEMENT |
CA002232523A CA2232523C (en) | 1996-07-22 | 1997-07-22 | Plug-in type electronic control unit, structure of connection of wiring board with plug member, unit of connection of electronic part with wiring board, and process for mounting electronic part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19212096A JP2952814B2 (en) | 1996-07-22 | 1996-07-22 | Connection unit between electronic components and board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1041348A JPH1041348A (en) | 1998-02-13 |
JP2952814B2 true JP2952814B2 (en) | 1999-09-27 |
Family
ID=16286012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19212096A Expired - Fee Related JP2952814B2 (en) | 1996-07-22 | 1996-07-22 | Connection unit between electronic components and board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2952814B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4503309B2 (en) * | 2004-02-13 | 2010-07-14 | リコーマイクロエレクトロニクス株式会社 | Electronic component fixing method using relay board, relay board manufacturing method, and component mounting board provided with relay board |
JP4735378B2 (en) * | 2006-04-04 | 2011-07-27 | 日本電気株式会社 | Electronic component mounting structure and manufacturing method thereof |
-
1996
- 1996-07-22 JP JP19212096A patent/JP2952814B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH1041348A (en) | 1998-02-13 |
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