JP2951462B2 - Sealing treatment method for gold plated material - Google Patents

Sealing treatment method for gold plated material

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Publication number
JP2951462B2
JP2951462B2 JP34312191A JP34312191A JP2951462B2 JP 2951462 B2 JP2951462 B2 JP 2951462B2 JP 34312191 A JP34312191 A JP 34312191A JP 34312191 A JP34312191 A JP 34312191A JP 2951462 B2 JP2951462 B2 JP 2951462B2
Authority
JP
Japan
Prior art keywords
sealing
nickel
plating
gold
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP34312191A
Other languages
Japanese (ja)
Other versions
JPH05311488A (en
Inventor
一彦 深町
靖裕 白壁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUKO KINZOKU KK
Original Assignee
NITSUKO KINZOKU KK
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Application filed by NITSUKO KINZOKU KK filed Critical NITSUKO KINZOKU KK
Priority to JP34312191A priority Critical patent/JP2951462B2/en
Publication of JPH05311488A publication Critical patent/JPH05311488A/en
Application granted granted Critical
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Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、銅系の金属材料のニッ
ケル又はニッケル含有合金めっきを下地として具備する
金または金合金めっき材の封孔処理方法及び封孔処理さ
れたコネクタ接触子に関する。特に金または金合金めっ
きの厚みが薄くても耐食性に優れ、電気的接続性が長期
的に安定して優れる封孔処理液、封孔処理方法及び封孔
処理されたコネクタ接触子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for sealing gold or a gold alloy plating material provided with nickel or nickel-containing alloy plating of a copper-based metal material as a base, and a connector contact which has been sealed. Particularly, the present invention relates to a sealing solution, a sealing method, and a connector contact that has been subjected to a sealing process, which is excellent in corrosion resistance even if the thickness of gold or gold alloy plating is thin, and has stable and excellent electrical connectivity over a long period of time. .

【0002】[0002]

【従来の技術】電子機器用接続部品としてコネクタは最
も代表的なものであり、多種多様のコネクタが実用化さ
れている。電算機や通信用機器等高度の信頼性が要求さ
れる、いわゆる産業用電子機器に使用されるコネクタ
は、りん青銅、ベリリウム銅等のバネ用銅合金を母材と
し、金めっきをしたものが一般に利用されている。しか
し、金は高価であるため、コネクタ製造コストを下げる
目的で様々な方法が採られてきた。その代表的な方法が
金めっきの厚みを薄くする方法であるが、金めっきの厚
みを薄くするとともに、被膜のピンホールが指数関数的
に増え、耐食性が著しく低下するという問題を抱えてい
る。この問題を解決する方法のひとつに封孔処理があ
る。すなわち、各種の無機性あるいは有機性の薬品で金
めっき表面を処理し、ピンホールを塞ぎ耐食性を向上さ
せようとするものである。封孔処理には水系と有機系が
ある。水系はクロメート法が代表的であり、効果はある
が接触抵抗が上昇する場合があり、また、環境汚染の問
題がある。有機系は、一般的にはハロゲン系有機溶剤が
溶媒に使われることから環境汚染の問題が生じる。溶媒
の環境汚染性を軽減するためには水系の方が有利である
が、クロメート法以外では有効な金及び金めっき材の封
孔処理方法は知られていなかった。
2. Description of the Related Art A connector is the most typical connector for electronic equipment, and various connectors have been put to practical use. Connectors used in so-called industrial electronic devices that require a high degree of reliability, such as computers and communication devices, are made of a copper alloy for springs such as phosphor bronze and beryllium copper and are plated with gold. It is commonly used. However, since gold is expensive, various methods have been employed to reduce connector manufacturing costs. A typical method is to reduce the thickness of the gold plating. However, there is a problem that the thickness of the gold plating is reduced, the number of pinholes in the coating film increases exponentially, and the corrosion resistance is significantly reduced. One of the methods for solving this problem is a sealing treatment. That is, the surface of the gold plating is treated with various inorganic or organic chemicals to close the pinholes and improve the corrosion resistance. There are aqueous and organic sealing methods. The water system is typically a chromate method, which is effective but may increase the contact resistance and has a problem of environmental pollution. In the case of an organic solvent, a problem of environmental pollution arises because a halogen-based organic solvent is generally used as a solvent. Although an aqueous system is more advantageous in reducing the environmental pollution of the solvent, no effective method of sealing gold or a gold-plated material other than the chromate method has been known.

【0003】[0003]

【発明が解決しようとする課題】そこで、環境汚染性に
問題がなく、かつ従来と同等ないしはそれ以上の封孔効
果を有する封孔処理液及び封孔処理方法が必要となって
いる。
Therefore, there is a need for a sealing solution and a sealing method which have no problem in environmental pollution and have a sealing effect equal to or higher than the conventional one.

【0004】本発明は、このような要求を満たすことの
できる改善された封孔処理液及びそれを用いる封孔処理
方法を提供することを目的とし、あわせてそれによって
処理されたコネクタを提供することを目的とするもので
ある。
[0004] It is an object of the present invention to provide an improved sealing solution capable of satisfying such a demand and a sealing method using the same, and also provide a connector processed by the same. The purpose is to do so.

【0005】[0005]

【課題を解決するための手段】かかる状況に鑑み、本発
明者等は鋭意研究を行った結果、以下に示す封孔処理方
法及び封孔処理されたコネクタ接触子を発明するに至っ
た。すなわち、本発明は、(1) 基材金属にニッケルまた
はニッケル含有合金めっきを施した材料を下地として具
備する金または金合金めっき材の封孔処理方法におい
て、インヒビターとして下記に示すベンゾトリアゾール
系化合物の1種もしくは2種以上を合計で10から10
00ppm含有する封孔処理水溶液中で該めっき材を電
極として、電解電位Ea(V、標準水素電極電位)を該
封孔処理液のpHとの関係において 0.5−0.0591pH<Ea<1.0−0.0591pH の範囲で直流電解することを特徴とする金または金合金
めっき材の封孔処理方法
In view of such circumstances, the present inventors have conducted intensive studies and as a result, have come to invent a sealing method and a connector contact which has been subjected to the following sealing treatment. That is, the present invention relates to (1) a method for sealing a gold or gold alloy plating material having a base metal coated with nickel or a nickel-containing alloy as a base, wherein the benzotriazole-based compound shown below is used as an inhibitor. 1 or 2 or more of 10 to 10
Electrolytic potential Ea (V, standard hydrogen electrode potential) in relation to the pH of the sealing solution is 0.5-0.0591 pH <Ea <1 with the plating material as an electrode in a sealing solution containing 00 ppm. DC electrolysis in the pH range of 0.0 to 0.0591 pH

【0006】[0006]

【化2】 Embedded image

【0007】および(2) 上記封孔処理方法で封孔処理さ
れたコネクタ接触子である。
And (2) a connector contact which has been sealed by the above sealing method.

【0008】本発明は、被処理材の電極電位を下地めっ
きであるニッケルの酸化領域保持して直流電解すること
により、金めっきのピンホール内部の下地金属であるニ
ッケルを酸化させ、ニッケルとベンゾトリアゾール系化
合物とを反応させ、錯化合物をピンホール内に充填させ
ることにより封孔効果をもたせる処理方法である。
According to the present invention, the electrode potential of a material to be treated is held in an oxidized area of nickel as a base plating and DC electrolysis is performed to oxidize the nickel as a base metal in a pinhole of gold plating, thereby forming nickel and benzo. This is a treatment method in which a triazole-based compound is reacted and a complex compound is filled in a pinhole to have a sealing effect.

【0009】被処理材の電解電位Eaを0.5−0.0
591pH(V)より大としたのはニッケルの水溶液中
での電位−pH図でも示されるように、これ以下の電位
ではニッケルが不動態化しやすくニッケル−ベンゾトリ
アゾール系の化合物ができにくく、封孔処理効果が著し
く低くなるためである。そして、ニッケルに限らないが
不動態化電位はpHの影響を受ける。一方、Eaが1.
0−0.0591pH(V)以上の領域では、酸素の発
生が著しく電極界面のpHが溶液のpHより著しく下が
るため、ニッケルの腐食溶解が促進され封孔効果の高い
錯化合物の形成が妨げられる。
The electrolytic potential Ea of the material to be treated is 0.5-0.0
As shown in the potential-pH diagram of nickel in an aqueous solution, nickel is easily passivated at a potential lower than 591 pH (V), and nickel-benzotriazole-based compounds are less likely to be formed at a potential lower than this, and pores are sealed. This is because the processing effect is significantly reduced. And, not limited to nickel, the passivation potential is affected by pH. On the other hand, when Ea is 1.
In the range of 0-0.0591 pH (V) or more, the generation of oxygen is remarkable, and the pH at the electrode interface is significantly lower than the pH of the solution, so that the corrosion and dissolution of nickel is promoted and the formation of a complex compound having a high sealing effect is prevented. .

【0010】インヒビターの総量を10ないし1000
ppmとしたのは、10ppm未満の濃度では封孔処理
機能が低く、又1000ppmを越える濃度では封孔処
理効果が飽和することとインヒビターの溶解度の問題か
ら界面活性剤やトリエチルアミン等のインヒビターの溶
解促進剤が必要となり、何等有益ではないからである。
ただし、1000ppm以下のインヒビター濃度であっ
ても溶解促進剤としてそれらを添加することは特に問題
はない。
[0010] The total amount of the inhibitor is 10 to 1000
The concentration of ppm is lower than 10 ppm because the sealing function is low. If the concentration is higher than 1000 ppm, the effect of the sealing treatment is saturated and the solubility of the inhibitor causes problems such as the promotion of dissolution of an inhibitor such as a surfactant or triethylamine. This is because an agent is required and is not useful at all.
However, even when the inhibitor concentration is 1000 ppm or less, there is no particular problem in adding them as a dissolution promoter.

【0011】封孔処理水溶液のpHは7.0以上が好ま
しい。これは、封孔処理の際、電解によって被処理材極
表面のpHは液中のpHより低くなりニッケルは腐食溶
解するが、封孔処理液のpHが7.0よりも低い場合、
酸化したニッケルの封孔処理液への溶出が促進され、封
孔処理効果の低下とともに、封孔処理液中のニッケルイ
オンが高くなり、封孔処理液の汚染や対極へのニッケル
の析出などが生じ製造上の障害となる。著しい場合は封
孔処理により腐食生成物が認められるまでになる。pH
調整は、公知の緩衝溶液を用いて行い、その緩衝溶液に
ついては何等制限されない。
The pH of the aqueous solution for pore treatment is preferably 7.0 or more. This is because at the time of the sealing treatment, the pH of the surface of the material to be treated becomes lower than the pH in the solution due to electrolysis and nickel is corroded and dissolved, but when the pH of the sealing treatment solution is lower than 7.0,
Elution of the oxidized nickel into the sealing solution is accelerated, and the nickel effect in the sealing solution increases with the decrease in the sealing effect, resulting in contamination of the sealing solution and deposition of nickel on the counter electrode. This causes a manufacturing obstacle. In a remarkable case, a corrosion product is found by the sealing treatment. pH
The adjustment is performed using a known buffer solution, and the buffer solution is not limited at all.

【0012】本発明において使用するインヒビターは、The inhibitor used in the present invention is:

【0013】[0013]

【化3】 Embedded image

【0014】で表わされる。例えば、ベンゾトリアゾー
ル(R1、Rともに水素)、1−メチルベンゾトリアゾ
ール(R1が水素、R2がメチル)、1−(N,N−ジオ
クチルアミノメチル)ベンゾトリアゾール(R1が水
素、R2がN,N−ジオクチルアミノメチル)、トリル
トリアゾール(R1がメチル、R2が水素)、ソジウムト
リルトリアゾール(R1がメチル、R2がナトリウム)等
が好ましい。
## EQU1 ## For example, benzotriazole (R 1 and R are both hydrogen), 1-methylbenzotriazole (R 1 is hydrogen and R 2 is methyl), 1- (N, N-dioctylaminomethyl) benzotriazole (R 1 is hydrogen, R 2 N, N-dioctyl amino methyl), tolyltriazole (R 1 is methyl, R 2 is hydrogen), sodium tolyltriazole (R 1 is methyl, R 2 is sodium) and the like are preferable.

【0015】本発明においては上記ベンゾトリアゾール
系化合物の他にインダゾール系化合物、ベンズイミダゾ
ール系化合物、インドール系化合物、1,3,5−トリ
アジンチオール系化合物等ニッケルへの腐食抑制作用が
知られる他のインヒビターを適宜、封孔処理液に添加す
ることは有効であり、これを妨げない。
In the present invention, in addition to the above-mentioned benzotriazole-based compounds, indazole-based compounds, benzimidazole-based compounds, indole-based compounds, 1,3,5-triazinethiol-based compounds and the like, which are known to have a corrosion inhibiting effect on nickel. It is effective to appropriately add an inhibitor to the sealing solution, and this is not prevented.

【0016】このほか、封孔処理液には、湿潤性を増す
ための各種界面活性材、潤滑性を増すためのアルキレン
グリコール類などを適宜添加して差し支えない。
In addition, various surfactants for increasing wettability, alkylene glycols for increasing lubricity, and the like may be appropriately added to the sealing liquid.

【0017】封孔処理は、線材、板材、条材など素材の
段階でめっき後行う場合は、めっき品をプレス加工後に
本発明の封孔処理液及び封孔処理方法で封孔処理するこ
とも有効である。めっき後封孔処理した金属材料であっ
ても、その後のプレス加工で付着したプレス油を洗浄す
る工程において、封孔処理の効果が低下することがあ
る。そこで再度の封孔処理が有効となる。プレス加工後
にめっきと封孔処理を施すこともできる。
In the case where the sealing treatment is performed after plating at the stage of a material such as a wire, a plate, and a strip, the plated product may be subjected to press working and then subjected to the sealing treatment with the sealing treatment solution and the sealing treatment method of the present invention. It is valid. Even in the case of a metal material that has been subjected to a sealing treatment after plating, the effect of the sealing treatment may be reduced in a step of cleaning press oil adhered in a subsequent press working. Therefore, the re-sealing process is effective. After the press working, plating and sealing can be performed.

【0018】その後のコネクタの加工工程においても、
最終の電子機器の組み立てまで、めっき品の洗浄工程が
あれば同様に封孔処理効果は低下するため、適宜本発明
により封孔処理することが有効である。従って、本発明
は本発明封孔処理方法によって処理されたコネクタも包
含するものである。
In the subsequent connector processing step,
If there is a step of washing the plated product until the final assembly of the electronic device, the sealing effect is similarly reduced, so that it is effective to appropriately perform the sealing process according to the present invention. Therefore, the present invention also includes a connector processed by the sealing method of the present invention.

【0019】なお、本発明における、めっき母材となる
金属材料は、銅、黄銅、りん青銅、チタン銅、ベリリウ
ム銅等の各種銅合金、鉄、ステンレス鋼、高ニッケル合
金等のコネクタの要求特性に従い適宜選択でき、何等制
限されない。めっき材のめっき方法については、電気め
っき、無電解めっき、あるいはCVD、PVD等の乾式
めっき等公知のものを適用でき、制限されない。
In the present invention, the metal material used as the plating base material is required characteristics of connectors such as various copper alloys such as copper, brass, phosphor bronze, titanium copper, beryllium copper, iron, stainless steel, and high nickel alloy. Can be appropriately selected in accordance with the above, and is not limited at all. A known plating method such as electroplating, electroless plating, or dry plating such as CVD or PVD can be applied to the plating method, and is not limited.

【0020】さらに、めっき条件は公知の方法が適用で
きる。金合金めっきとしては金をベースとする合金めっ
きであって、用途により適宜選ばれる。コネクタ用途で
は耐摩耗性を向上するために、コバルトを微量含む硬質
めっきが広く使用されている。下地めっきはニッケルの
みか、あるいはパラジウムにニッケルを10〜20%合
金化したものが一般的であるが、ニッケル含有の合金で
あれば本発明は有効である。
Further, a known method can be applied to the plating conditions. The gold alloy plating is an alloy plating based on gold, and is appropriately selected depending on the application. Hard plating containing a small amount of cobalt is widely used in connectors for improving wear resistance. The base plating is generally made of nickel alone or a palladium alloyed with nickel of 10 to 20%, but the present invention is effective if the alloy contains nickel.

【0021】[0021]

【実施例】以下に実施例を挙げて本発明をさらに詳細に
説明する。
The present invention will be described in more detail with reference to the following examples.

【0022】バネ用りん青銅(C5210−H)の厚み
0.2mmの冷間圧延材を用い、雄及び雌の連続端子を
それぞれプレス成形した。これらをリール・ツウ・リー
ルの連続電気めっきラインを通して電気めっきを施し
た。めっきラインにおいては、脱脂、酸洗後、ワット浴
により1μmのニッケルめっきを行い、その上に金を
0.1μmの厚みで接点部に部分めっきした。また、連
続めっきラインでは、金めっき後に封孔処理工程を設
け、連続端子を通入することにより封孔処理を施した。
封孔処理液のpHは、緩衝溶液を用いて調整した。こう
して表面処理した雄と雌の端子をキャリアー部から切断
しリード線を圧着した後、それぞれを嵌合し評価試験に
供した。
Male and female continuous terminals were press-formed from cold-rolled phosphor bronze (C5210-H) having a thickness of 0.2 mm. These were electroplated through a continuous reel-to-reel electroplating line. In the plating line, after degreasing and pickling, nickel plating of 1 μm was performed in a Watt bath, and gold was partially plated on the contact portion with a thickness of 0.1 μm. In the continuous plating line, a sealing process was provided after gold plating, and the sealing process was performed by passing a continuous terminal.
The pH of the sealing solution was adjusted using a buffer solution. After the surface-treated male and female terminals were cut from the carrier portion and lead wires were crimped, they were fitted and subjected to an evaluation test.

【0023】さらに、金めっきについては金−コバルト
合金めっき、下地めっきはアンモニア系のめっき液から
Pd80%−Ni20%合金めっきについても同様にり
ん青銅に施し、評価した。
Further, gold-cobalt alloy plating was applied to the gold plating, and phosphor bronze was applied to the phosphor bronze for the Pd 80% -Ni 20% alloy plating from an ammonia-based plating solution.

【0024】接触抵抗は直流10mmA、開放電圧50
mmVで測定した。腐食試験は次の条件で行った。
Contact resistance: DC 10 mmA, open voltage 50
It was measured in mmV. The corrosion test was performed under the following conditions.

【0025】ガス組成:H2S 3ppm SO2 10ppm 温度 :40±2℃ 湿度 :80±5%RH 時間 :96時間 結果を表1に示す。Gas composition: H 2 S 3 ppm SO 2 10 ppm Temperature: 40 ± 2 ° C. Humidity: 80 ± 5% RH Time: 96 hours The results are shown in Table 1.

【0026】[0026]

【表1】 [Table 1]

【0027】注1) ただし、表中封孔処理液の略号は
以下の通りである。
Note 1) However, the abbreviations of the sealing liquid in the table are as follows.

【0028】A−1:ベンゾトリアゾール A−2:1−メチルベンゾトリアゾール A−3:トリルトリアゾール A−4:ソジウムトリルトリアゾール A−5:1−(N,N−ジオクチルアミノメチル)ベン
ゾトリアゾール(R1が水素、R2がN,N−ジオクチル
アミノメチル) 注2) 試験の判定基準は次の通りである。
A-1: benzotriazole A-2: 1-methylbenzotriazole A-3: tolyltriazole A-4: sodium tolyltriazole A-5: 1- (N, N-dioctylaminomethyl) benzotriazole ( R 1 is hydrogen, R 2 is N, N-dioctyl amino methyl) Note 2) criteria of the test are as follows.

【0029】(1)初期接触抵抗、腐食試験後の接触抵抗
(n=5の平均値) ○:10mmΩ以下 △:10〜20mmΩ ×:20mmΩ以上 (2)腐食試験後の外観 ○:腐食生成物なし △:腐食生成物点在 ×:腐食点が全面に認められる
(1) Initial contact resistance, contact resistance after corrosion test (average value of n = 5) ○: 10 mmΩ or less △: 10 to 20 mmΩ ×: 20 mmΩ or more (2) Appearance after corrosion test ○: Corrosion product None △: Corrosion products scattered ×: Corrosion spots are observed on the entire surface

【0030】[0030]

【発明の効果】以上述べたように、本発明により封孔処
理された金めっき材の接点は、封孔処理後の接触抵抗が
低く、過酷な腐食環境においても優れた耐食性を示し、
接触抵抗が上昇せず、接触性能が安定しているという利
点を有する。
As described above, the contacts of the gold-plated material sealed according to the present invention have low contact resistance after the sealing treatment and exhibit excellent corrosion resistance even in a severe corrosive environment.
There is an advantage that the contact resistance does not increase and the contact performance is stable.

フロントページの続き (58)調査した分野(Int.Cl.6,DB名) C25D 5/48 C25D 7/00 Continuation of front page (58) Field surveyed (Int.Cl. 6 , DB name) C25D 5/48 C25D 7/00

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基材金属にニッケルまたはニッケル含有
合金めっきを施した材料を下地として具備する金または
金合金めっき材の封孔処理方法において、インヒビター
として下記に示すベンゾトリアゾール系化合物の1種も
しくは2種以上を合計で10から1000ppm含有す
る封孔処理水溶液中で該めっき材を電極として、電解電
位Ea(V、標準水素電極電位)を該封孔処理液のpH
との関係において 0.5−0.0591pH<Ea<1.0−0.0591pH の範囲で直流電解することを特徴とする金または金合金
めっき材の封孔処理方法。 【化1】
1. A method for sealing a gold or gold alloy plating material comprising a base metal coated with nickel or a nickel-containing alloy as a base material, wherein one of the following benzotriazole-based compounds or Electrolytic potential Ea (V, standard hydrogen electrode potential) was measured using the plating material as an electrode in an aqueous solution for sealing treatment containing a total of 10 to 1000 ppm of two or more kinds.
DC electrolysis in the range of 0.5-0.0591 pH <Ea <1.0-0.0591 pH in relation to the above method. Embedded image
【請求項2】 封孔処理液のpHが7.0以上であるこ
とを特徴とする請求項1記載の封孔処理方法。
2. The method according to claim 1, wherein the pH of the sealing solution is 7.0 or more.
【請求項3】 請求項1又は2記載の方法で封孔処理さ
れたコネクタ接触子。
3. A connector contact which has been sealed by the method according to claim 1.
JP34312191A 1991-12-25 1991-12-25 Sealing treatment method for gold plated material Expired - Lifetime JP2951462B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34312191A JP2951462B2 (en) 1991-12-25 1991-12-25 Sealing treatment method for gold plated material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34312191A JP2951462B2 (en) 1991-12-25 1991-12-25 Sealing treatment method for gold plated material

Publications (2)

Publication Number Publication Date
JPH05311488A JPH05311488A (en) 1993-11-22
JP2951462B2 true JP2951462B2 (en) 1999-09-20

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Country Link
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3207770B2 (en) * 1996-11-01 2001-09-10 株式会社ボッシュオートモーティブシステム Plasma CVD equipment
JP5740727B2 (en) * 2010-05-17 2015-06-24 ユケン工業株式会社 Sealing treatment agent and sealing treatment method

Also Published As

Publication number Publication date
JPH05311488A (en) 1993-11-22

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