JP2950390B2 - Low spatter solid wire for gas shielded arc welding and method for producing the same. - Google Patents

Low spatter solid wire for gas shielded arc welding and method for producing the same.

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Publication number
JP2950390B2
JP2950390B2 JP18574092A JP18574092A JP2950390B2 JP 2950390 B2 JP2950390 B2 JP 2950390B2 JP 18574092 A JP18574092 A JP 18574092A JP 18574092 A JP18574092 A JP 18574092A JP 2950390 B2 JP2950390 B2 JP 2950390B2
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JP
Japan
Prior art keywords
intragranular
wire
spatter
oxide
solid wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP18574092A
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Japanese (ja)
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JPH06689A (en
Inventor
時彦 片岡
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JFE Steel Corp
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Kawasaki Steel Corp
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、表層部に酸素を富化さ
せたガスシールドアーク溶接用低スパッタソリッドワイ
ヤに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low spatter solid wire for gas-shielded arc welding in which the surface layer is enriched with oxygen.

【0002】[0002]

【従来の技術】Ar、CO2 、He等の単独ガス、あるいはA
r、He、CO2 、O2等の混合ガスよりなるAr-CO2、Ar-O
2 、Ar-He-CO2-O2等のシールドガスがガスシールドアー
ク溶接に用いられる。これらのシールドガスを用いたガ
スシールドアーク溶接の際のスパッタを低減するため
に、ソリッドワイヤの表層部に酸化物よりなる酸素富化
層を生成させる技術が従来いくつか提案されてきてい
る。ワイヤ表層部に存在する酸化物は溶接時における溶
滴の表面張力を低下させ、溶滴を微細化させる。また、
酸化物は酸素それ自身によるアーク安定化作用により母
材への溶滴の移行をスムーズにし、スパッタ発生量を低
下させる働きがある。
2. Description of the Related Art A single gas such as Ar, CO 2 , He, or A
Ar-CO 2 , Ar-O consisting of mixed gas of r, He, CO 2 , O 2 etc.
2, Ar-He-CO 2 shielding gas -O 2 or the like is used in gas shielded arc welding. In order to reduce spatter during gas shielded arc welding using these shielding gases, several techniques for generating an oxygen-enriched layer made of an oxide on the surface of a solid wire have been proposed. The oxide present in the surface layer of the wire lowers the surface tension of the droplet during welding, and makes the droplet finer. Also,
Oxide has the function of smoothing the transfer of droplets to the base material by the arc stabilizing action of oxygen itself, thereby reducing the amount of spatter generated.

【0003】そして酸素の富化方法としては、次の方法
がこれまでに開示されている。 ;特開昭60-40685号公報の最終製品あるいは伸線段階
の潤滑油にあらかじめ酸化物を混合させておく方法。 ;特開昭59-110496 号公報の焼鈍等において表層に生
成したスケールを1部残した状態でメッキを施す方法。 ;特開昭58-187298 号公報のメッキを施した後に熱処
理を行い表面に酸化物を富化させる方法。 ; 特開昭58-128294 、59-61592、59-66996、60-40685
号公報の、焼鈍を 200℃から 950℃で行ない粒界酸化を
おこさせる方法。
The following method has been disclosed as an oxygen enrichment method. A method in which an oxide is mixed in advance with the final product of JP-A-60-40685 or the lubricating oil at the wire drawing stage. A method of plating while leaving one part of the scale formed on the surface layer by annealing or the like in JP-A-59-110496. A method of enriching oxides on the surface by performing a heat treatment after plating as disclosed in JP-A-58-187298. ; JP-A-58-128294, 59-61592, 59-66996, 60-40685
In the method disclosed in Japanese Patent Application Laid-Open Publication No. H10-209, annealing is performed at 200 to 950 ° C. to cause grain boundary oxidation.

【0004】[0004]

【発明が解決しようとする課題】しかし、上述のから
の方法では、ワイヤ表層部に均一かつ十分な量を付着
させることは難しい。すなわち、の方法では、潤滑油
中に均一に酸化物を混入させることが難しいこと、また
最終製品での潤滑油の量はワイヤ重量に対し、 0.1%ほ
どしかなく、低スパッタ化に十分な酸化物を均一に付着
させることは困難であるという問題がある。
However, according to the above-mentioned method, it is difficult to make a uniform and sufficient amount adhere to the surface layer of the wire. In other words, it is difficult to uniformly mix oxides in the lubricating oil with the method described above, and the amount of the lubricating oil in the final product is only about 0.1% of the wire weight, and it is sufficient for low spatter There is a problem that it is difficult to uniformly attach an object.

【0005】また、の方法では、スケールがワイヤ表
面に均一かつまんべんなく付着している状態では健全な
メッキを施すことは困難であるので、スケールを部分的
に残す必要があるが、焼鈍、酸洗の際のスケール残留量
のコントロールが困難であるという問題がある。の方
法で、メッキを施した後に熱処理を加えたのでは、メッ
キ層が酸化することは避けがたい。ワイヤ表面部の酸化
物量と通電性とは相反するものであり、低スパッタ化に
十分な酸化物量を確保した場合、通電性が悪くなり、ア
ークが不安定となって十分な低スパッタ化が図れない。
また、富化した酸化物量によっては、逆にスパッタを増
す結果にもなる。
In the method (1), it is difficult to apply sound plating in a state where the scale is uniformly and evenly attached to the wire surface. Therefore, it is necessary to partially leave the scale. In this case, there is a problem that it is difficult to control the amount of residual scale. If a heat treatment is applied after plating in the method described above, oxidation of the plating layer is inevitable. The amount of oxide on the surface of the wire and the electrical conductivity are contradictory.If a sufficient amount of oxide is secured for reducing the spatter, the electrical conductivity deteriorates, the arc becomes unstable, and the spatter can be reduced sufficiently. Absent.
In addition, depending on the amount of the enriched oxide, spatter may be increased.

【0006】の方法ては、熱処理、酸洗後にメッキを
施すことになるので、メッキ層は健全であり、かつメッ
キ層の内側の粒界の酸化物により、スパッタ低減の効果
はある程度期待できる。しかし、粒界酸化の発生は表面
層の粒界ピッチに左右されるため、その発生は通常C方
向で 5μm以上、L方向で 100μm以上と粗くなり、溶
滴移行を細かくして、低スパッタ化を図るには十分では
ないという問題がある。
According to the method, plating is performed after heat treatment and pickling, so that the plating layer is sound, and the effect of reducing spatter can be expected to some extent due to the oxide at the grain boundaries inside the plating layer. However, since the occurrence of grain boundary oxidation depends on the grain boundary pitch of the surface layer, the occurrence is generally coarser at 5 μm or more in the C direction and 100 μm or more in the L direction, making droplet transfer finer and reducing spatter. There is a problem that is not enough to achieve.

【0007】本発明は、上記の諸問題を解決し、メッキ
性を害さずにソリッドワイヤの表面にスパッタ低減に有
効な形態の酸素を富化する方法を提供する。
The present invention solves the above-mentioned problems, and provides a method for enriching oxygen in a form effective for reducing spatter on the surface of a solid wire without impairing plating properties.

【0008】[0008]

【課題を解決するための手段】発明者らは鋭意研究を進
めた結果、粒界酸化法よりも細かく均一に、より表層部
に濃化した形で酸化物を富化させることにより、目標と
する低スパッタ化が可能ではないか検討した結果、粒内
酸化物層を表層に有することによって目標とする低スパ
ッタ化が可能であると見出した。
Means for Solving the Problems As a result of intensive studies, the inventors have found that the oxides can be enriched in a finer and more uniform form than in the grain boundary oxidation method and in a form more concentrated in the surface layer, thereby achieving the target. As a result of examining whether or not it is possible to reduce the sputtering, it was found that the target sputtering can be reduced by having the intragranular oxide layer in the surface layer.

【0009】すなわち本発明は、重量%でSiを0.10%
以上、および/またはMnを0.20%以上含有する鋼ソリッ
ドワイヤであって、ワイヤ表層部において、粒内酸化物
層を深さ 2.5μm以上有し、該粒内酸化物層は、直径0.
1 〜4μmの粒状の粒内酸化物を、0.1 〜3μmの細か
いピッチで析出させて、断面積 100μm2 当たり10個以
上有することを特徴とするガスシールドアーク溶接用低
スパッタソリッドワイヤであり、重量%でSiを0.10%
以上および/またはMnを0.20%以上含有する鋼ソリッド
ワイヤを1000℃以上で10秒以上、水蒸気を 0.1〜1.5 %
含むN2 雰囲気中で加熱し、表層部に粒内酸化物層を生
成させることを特徴とするガスシールドアーク溶接用低
スパッタソリッドワイヤの製造方法である。
That is, in the present invention, 0.10% by weight of Si
And / or a steel solid wire containing 0.20% or more of Mn, wherein the intragranular oxide layer has a depth of 2.5 μm or more in the surface portion of the wire, and the intragranular oxide layer has a diameter of 0.2 μm or more .
1 to 4 μm granular intragranular oxide is reduced to 0.1 to 3 μm
It is a low spatter solid wire for gas shielded arc welding characterized by being deposited at a high pitch and having 10 or more per 100 μm 2 in cross-sectional area. 0.10% by weight of Si
Or more and / or steel solid wire containing 0.20% or more of Mn at 1000 ° C or more for 10 seconds or more, and 0.1 to 1.5% of steam
A method for producing a low spatter solid wire for gas shielded arc welding, comprising heating in an N 2 atmosphere containing N 2 gas to form an intragranular oxide layer on a surface layer.

【0010】[0010]

【作用】前述したように、ガスシールドアーク溶接の際
の低スパッタ化を図るには、溶滴移行を微細化する必要
がある。そのためには溶滴表面の表面張力を低下させ、
かつ常にアークが安定である必要があり、したがって酸
化物はできるだけ表層に近く、かつ均一に高密度で存在
させることが理想である。
As described above, in order to reduce spatter during gas shielded arc welding, it is necessary to make droplet transfer finer. To do so, lower the surface tension of the droplet surface,
In addition, it is necessary that the arc be stable at all times. Therefore, it is ideal that the oxide is present as close to the surface layer as possible and uniformly at a high density.

【0011】粒界酸化状態では、粒内にはそれほど酸化
物の密度が高くない状態で、粒界付近のSiとMnを濃化さ
せたFe酸化物が粒界に連続的に成長している。一方、本
発明によるワイヤでは、ワイヤのごく表層部に粒状の粒
内酸化物を生成させる。本発明では、粒内酸化物とは、
結晶粒内に析出した粒状の酸化物を称し、このような粒
内酸化物が存在する領域(層)を粒内酸化物層と称す
る。その酸化物の構成元素は、粒界酸化同様、Si,Mn,
Fe,O であるが、顕微鏡の測定結果から判断すると、そ
の酸化物量は粒界酸化に比較して、約3倍から5倍であ
る。
In the grain boundary oxidized state, Fe oxides in which Si and Mn are concentrated near the grain boundaries are continuously grown on the grain boundaries in a state where the oxide density is not so high in the grains. . On the other hand, in the wire according to the present invention, a granular intragranular oxide is generated at a very surface portion of the wire. In the present invention, the intragranular oxide is
The term "granular oxide precipitated in the crystal grains" refers to a region (layer) in which such intragranular oxides are present, referred to as an intragranular oxide layer. The constituent elements of the oxide are Si, Mn,
Although the contents of Fe and O are judged from the result of the microscope measurement, the amount of the oxide is about three to five times that of the grain boundary oxidation.

【0012】この粒内酸化物層の深さがワイヤ表面から
2.5μm未満では酸化物量の不足により十分な低スパッ
タ化が図れない。十分な低スパッタ化を達成するために
は粒内酸化物層深さは 2.5μm以上必要である。また、
粒内酸化物層には粒状の粒内酸化物が生成されている。
この粒内酸化物層の粒状の粒内酸化物個数を断面積 100
μm2 当たり10個以上とする。粒内酸化物層において断
面積 100μm2 当たりの粒内酸化物数が10個未満では、
粒界酸化同様、酸化物のピッチが粗く十分な低スパッタ
化が図れない。粒内酸化物の個数はワイヤ長手方向に対
し直角の断面の粒内酸化物層について顕微鏡を用いて測
定し、断面積 100μm2 当たりの個数に換算した値を用
いる。
[0012] The depth of the intragranular oxide layer from the wire surface
If the thickness is less than 2.5 μm, a sufficient reduction in sputtering cannot be achieved due to an insufficient amount of the oxide. In order to achieve a sufficiently low sputter, the depth of the intragranular oxide layer needs to be 2.5 μm or more. Also,
A granular intragranular oxide is generated in the intragranular oxide layer.
The number of granular intragranular oxides in this intragranular oxide layer
10 or more per μm 2 . If the number of intragranular oxides per 100 μm 2 in the intragranular oxide layer is less than 10,
As in the case of grain boundary oxidation, the pitch of the oxide is coarse, and it is not possible to sufficiently reduce the sputtering. The number of intragranular oxides is measured using a microscope with respect to the intragranular oxide layer having a cross section perpendicular to the longitudinal direction of the wire, and the value converted into the number per 100 μm 2 of cross sectional area is used.

【0013】鋼成分としては、Siが0.10%未満および/
またはMnが0.20%未満では粒内酸化はもちろん粒界酸化
も認められない。よってSi,Mnの少なくともどちらか一
方をそれぞれ0.10%あるいは0.20%以上含んでいる必要
がある。また、粒内酸化物層を得るためには、1000℃以
上で10秒以上の加熱を必要とする。1000℃未満で10秒未
満の加熱時間では、粒内酸化物層の深さが 2.5μm未
満、粒内酸化物層の断面積100 μm2 当たりの粒内酸化
物数が10個未満となり十分な低スパッタ化が図れない。
従って、粒内酸化物層のワイヤ表面からの深さを 2.5μ
m以上かつ断面積 100μm2 当たり粒内酸化物数が10個
以上生成させるには1000℃以上で10秒以上加熱する必要
がある。加熱は、水蒸気を 0.1〜1.5 %(体積%)含む
2 ガス雰囲気中で行うのが好ましい。
As a steel component, Si is less than 0.10% and / or
When Mn is less than 0.20%, neither intragranular oxidation nor grain boundary oxidation is observed. Therefore, it is necessary to contain at least one of Si and Mn at 0.10% or 0.20% or more, respectively. Further, in order to obtain an intragranular oxide layer, heating at 1000 ° C. or more for 10 seconds or more is required. In at the heating time is less than 10 seconds less than 1000 ° C., less than the depth of the intragranular oxide layer is 2.5 [mu] m, and becomes sufficient intragranular oxide number of cross-sectional area 100 [mu] m 2 per intragranular oxide layer is less than 10 Low spattering cannot be achieved.
Therefore, the depth of the intragranular oxide layer from the wire surface
Heating at 1000 ° C. or more for 10 seconds or more is required to generate 10 or more intragranular oxides per m or more and 100 μm 2 in cross-sectional area. The heating is preferably performed in an N 2 gas atmosphere containing 0.1 to 1.5% (vol%) of water vapor.

【0014】製造プロセスとしては、熱間圧延→中間伸
線→中間焼鈍→酸洗→メッキ→仕上げ伸線という工程が
一般的である。表層酸化物の付与は、この中間焼鈍段階
で行うのが一般的であるが、粒界酸化物を有する場合は
必ず表面とのつながりをもつため酸洗によって一部剥離
する他、メッキに悪影響を与え、むらを生じる。また、
粒界酸化物を有する場合、メッキ後の仕上げ伸線によっ
てワイヤ表面に松肌状の横メッキ亀裂を生じる。一方、
本発明のワイヤにおける粒内酸化物は表面とつながりを
持たないため酸洗によって粒内酸化物が除去されること
はないほか、メッキ処理への悪影響はなく、松肌状のメ
ッキ亀裂も生じない。
As a manufacturing process, the steps of hot rolling → intermediate drawing → intermediate annealing → pickling → plating → finish drawing are common. The application of the surface oxide is generally performed during this intermediate annealing step, but if it has a grain boundary oxide, it always has a connection with the surface, so that it is partially peeled off by pickling and adversely affects plating. Gives and produces unevenness. Also,
In the case of having a grain boundary oxide, a finish wire after plating causes a pine-like horizontal plating crack on the wire surface. on the other hand,
Since the intragranular oxide in the wire of the present invention does not have a connection with the surface, the intragranular oxide is not removed by pickling, there is no adverse effect on the plating treatment, and there is no pine-like plating crack. .

【0015】[0015]

【実施例】熱間圧延仕上げ線径 5.5mmφを 2.5mmφまで
中間伸線後、所定の熱処理を行ない、酸洗、メッキを施
し、 1.2mmφまで仕上げ伸線しスパッタ発生量を測定し
た。熱処理は、粒内酸化を起こさせるために、水蒸気を
0.1%〜 1.5%(vol%)含むN2ガスを毎分50l 〜100l送
給し行なった。スパッタの発生量測定時の溶接条件を表
1に示す。シールドガス組成としてCO2 および Ar-20%
CO2 各1条件について評価した。また、発生スパッタの
全数を捕集し、その重量にてスパッタ発生量を評価して
いる。スパッタ発生量は、シールドガス組成としてCO2
を用いた溶接条件No.1では2.0g/min以下、シールドガス
組成として Ar-20%CO2 を用いた溶接条件No.2では 0.2
5g/min以下を目標値とした。
EXAMPLE After intermediate drawing of a hot-rolled finished wire having a diameter of 5.5 mmφ to 2.5 mmφ, a predetermined heat treatment was carried out, followed by pickling and plating, finish-drawing to 1.2 mmφ, and measuring the amount of spatter generated. In heat treatment, water vapor is generated to cause intragranular oxidation.
The 0.1% ~ 1.5% (vol% ) containing N 2 gas was performed min 50 l ~100L feeding feeds. Table 1 shows the welding conditions when measuring the amount of spatter generation. CO 2 and Ar-20% as shielding gas composition
Each condition of CO 2 was evaluated. Further, the total number of generated spatters is collected, and the amount of spatter generated is evaluated based on the weight. The amount of spatter generated was calculated as CO 2
2.0g / min or less for welding condition No. 1 using Al, and 0.2 for welding condition No. 2 using Ar-20% CO 2 as the shielding gas composition.
The target value was 5 g / min or less.

【0016】[0016]

【表1】 [Table 1]

【0017】表2の化学組成のワイヤを用いた試験結果
を、シールドガス組成としてCO2 および Ar-20%CO2
用いた場合について、それぞれ表3および表4に示す。
粒内酸化物層深さおよび粒内酸化物の個数は、ワイヤ長
手方向に対し直角な断面(C断面)を顕微鏡(光学顕微
鏡又は電子顕微鏡)にて観察し、粒内酸化物の存在する
粒内酸化物層深さおよび粒内酸化物層における粒状の粒
内酸化物を測定した。また、表3、表4の結果を、スパ
ッタ発生量と粒内酸化物層深さおよび断面積 100μm2
あたりの粒内酸化物数をシールドガス組成がCO2 の場合
についてそれぞれ図1と図2に、また、シールドガス組
成が Ar-20%CO2 の場合について同様にそれぞれ図3お
よび図4に示す。
The test results using wires having the chemical composition shown in Table 2 are shown in Tables 3 and 4 for the case where CO 2 and Ar-20% CO 2 are used as the shielding gas composition, respectively.
The depth of the intragranular oxide layer and the number of intragranular oxides can be determined by observing a cross section (C cross section) perpendicular to the longitudinal direction of the wire with a microscope (optical microscope or electron microscope). The internal oxide layer depth and granular intragranular oxide in the intragranular oxide layer were measured. Further, the results in Tables 3 and 4 show the amount of spatter generated, the depth of the intragranular oxide layer, and the cross-sectional area of 100 μm 2.
1 and 2 for the case where the shielding gas composition is CO 2 , and FIGS. 3 and 4 for the case where the shielding gas composition is Ar-20% CO 2 , respectively. .

【0018】これらの図と表から明らかなように本発明
のワイヤではスパッタ発生量の目標値を満足している。
As apparent from these figures and tables, the wire of the present invention satisfies the target value of the amount of spatter generated.

【0019】[0019]

【表2】 [Table 2]

【0020】[0020]

【表3】 [Table 3]

【0021】[0021]

【表4】 [Table 4]

【0022】表3においてシールドガス組成としてCO2
を用いた溶接条件No.1の比較例No.14 〜19では粒内酸化
物層深さが2μm 以下と浅いほか、No.15 〜18では粒内
酸化物数もそれぞれ9個以下と少ないためそのスパッタ
発生量は2.1g/min以上と十分な低スパッタが達成されて
いない。
In Table 3, CO 2 was used as the shielding gas composition.
In Comparative Examples Nos. 14 to 19 using welding conditions No. 1 and the intragranular oxide layer depth was as shallow as 2 μm or less in Nos. 15 to 18, and the number of intragranular oxides was as small as 9 or less in Nos. 15 to 18, respectively. The sputter generation amount is 2.1 g / min or more, and a sufficiently low sputter has not been achieved.

【0023】表4において、シールドガス組成として A
r-20%CO2 を用いた溶接条件No.2の比較例No.31 〜35で
は粒内酸化物層深さがそれぞれ2μm以下と浅い他、断
面積100μm2 中の粒内酸化物数もそれぞれ9個以下と
少ないため、それらのスパッタ発生量は0.25g/min 以上
と十分な低スパッタ化が達成されていない。Si含有量0.
08%、Mn含有量0.16%と低いワイヤ化学組成を用いた比
較例No.29と30では粒内酸化物層深さが1μm以下と浅
く、断面積100 μm2 中の粒内酸化物数も1個以下と少
ない。
In Table 4, the shielding gas composition A
In Comparative Examples No. 31 to No. 35 of welding condition No. 2 using r-20% CO 2 , the intragranular oxide layer depth is as small as 2 μm or less, respectively, and the number of intragranular oxides in the cross-sectional area of 100 μm 2 is also small. Since each of them is as small as 9 or less, their sputter generation amount is not less than 0.25 g / min, and a sufficiently low spatter has not been achieved. Si content 0.
In Comparative Examples Nos. 29 and 30, which used a low wire chemical composition of 08% and a Mn content of 0.16%, the intragranular oxide layer depth was as shallow as 1 μm or less, and the number of intragranular oxides in a cross-sectional area of 100 μm 2 was also small. Less than one.

【0024】加熱温度1000℃未満の比較例 No.17、18、
19、34、35もそれぞれ粒内酸化物層深さが1μm 以下と
浅く、断面積 100μm2 中の粒内酸化物数も8個以下と
少ない。加熱時間10秒未満の比較例 No.14、15、16、3
1、32、33もそれぞれ粒内酸化物層深さ2μm以下と浅
く、断面積 100μm2 中の粒内酸化物数もNo.14 以外は
9個以下と少ない。図5に示す比較例 No.31のワイヤで
は、1200℃で5秒の加熱後では粒界酸化が約15μm発生
しており、ピッチが粗い。それに対し、図6に示す実施
例No.24 のワイヤでは、1200℃10秒の熱処理後で、粒状
の粒内酸化物が表層に均一に細かく発生している。ま
た、図7に同じく実施例No.24 のワイヤでの熱処理後の
表層における電子顕微鏡写真(3000倍)を示す。 0.1〜
4μmの粒内酸化物が 0.1〜μmの細かいピッチで析
出している。
Comparative Examples No. 17, 18, Heating Temperature Below 1000 ° C.
19, 34 and 35 each have a shallow intragranular oxide layer depth of 1 μm or less, and the number of intragranular oxides in a cross-sectional area of 100 μm 2 is as small as 8 or less. Comparative examples with heating time less than 10 seconds No. 14, 15, 16, 3
1,32,33 be shallower than intragranular oxide layer depth 2μm respectively, intragranular oxide number in the cross-sectional area 100 [mu] m 2 even No.14 except small as 9 or less. In the wire of Comparative Example No. 31 shown in FIG. 5, after heating at 1200 ° C. for 5 seconds, grain boundary oxidation occurs at about 15 μm, and the pitch is coarse. On the other hand, in the wire of Example No. 24 shown in FIG. 6, after the heat treatment at 1200 ° C. for 10 seconds, fine intragranular oxides were uniformly and finely generated on the surface layer. FIG. 7 also shows an electron micrograph (× 3000) of the surface layer after the heat treatment using the wire of Example No. 24. 0.1 ~
4 μm intragranular oxides are precipitated at a fine pitch of 0.1 to 3 μm.

【0025】[0025]

【発明の効果】本発明により、鋼ソリッドワイヤのごく
表層部に微細で均一高密度の粒内酸化物層を生成させる
ことができるようになり、このワイヤをガスシールドア
ーク溶接に使用すれば、スパッタの発生を著しく低減す
ることができる。その結果、ワークあるいは溶接トーチ
のノズルに付着するスパッタの除去作業が著しく軽減さ
れ、手入れ工数の削減、職場環境の改善などの大きな効
果が得られた。
According to the present invention, a fine, uniform and high-density intragranular oxide layer can be formed on the very surface layer of a steel solid wire. If this wire is used for gas shielded arc welding, Spatter generation can be significantly reduced. As a result, the work of removing spatter adhered to the work or the nozzle of the welding torch was remarkably reduced, and significant effects such as reduction in the number of maintenance steps and improvement in the work environment were obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】表1に示す化学組成の鋼ソリッドワイヤを、シ
ールドガスに CO2を用いて溶接条件No.1で溶接した場合
の、スパッタ発生量と粒内酸化物層深さとの関係を示す
特性図である。
FIG. 1 shows the relationship between spatter generation and intragranular oxide layer depth when a steel solid wire having the chemical composition shown in Table 1 is welded under welding conditions No. 1 using CO 2 as a shielding gas. It is a characteristic diagram.

【図2】表1に示す化学組成の鋼ソリッドワイヤを、シ
ールドガスに CO2を用いて溶接条件No.1で溶接した場合
の、スパッタ発生量と断面積 100μm2当たりの粒内酸化
物個数との関係を示す特性図である。
Fig. 2 Spatter generation and the number of intragranular oxides per 100 µm 2 cross section when a steel solid wire having the chemical composition shown in Table 1 was welded under welding conditions No. 1 using CO 2 as a shielding gas. FIG. 4 is a characteristic diagram showing a relationship between

【図3】表1に示す化学組成の鋼ソリッドワイヤを、シ
ールドガスにAr-20%CO2 を用いて溶接条件No.1で溶接し
た場合の、スパッタ発生量と粒内酸化物層深さとの関係
を示す特性図である。
FIG. 3 shows the relationship between spatter generation and intragranular oxide layer depth when a steel solid wire having the chemical composition shown in Table 1 was welded under welding conditions No. 1 using Ar-20% CO 2 as a shielding gas. FIG. 4 is a characteristic diagram showing the relationship of FIG.

【図4】表1に示す化学組成の鋼ソリッドワイヤを、シ
ールドガスにAr-20%CO2 を用いて溶接条件No.1で溶接し
た場合の、スパッタ発生量と断面積100 μm2当たりの粒
酸化物個数との関係を示す特性図である。
FIG. 4 shows the amount of spatter generated and the cross-sectional area per 100 μm 2 when a steel solid wire having the chemical composition shown in Table 1 was welded under the welding condition No. 1 using Ar-20% CO 2 as a shielding gas. FIG. 4 is a characteristic diagram showing a relationship with the number of grain oxides.

【図5】比較例No.31 のワイヤの表層部の金属組織を示
す1000倍の光学顕微鏡写真である。
FIG. 5 is an optical micrograph (× 1000) showing a metal structure of a surface layer of a wire of Comparative Example No. 31.

【図6】実施例No.24 のワイヤの表層部の金属組織を示
す1000倍の光学顕微鏡写真である。
FIG. 6 is an optical micrograph (× 1000) showing the metal structure of the surface layer of the wire of Example No. 24.

【図7】実施例No.24 のワイヤの表層部の金属組織を示
す3000倍の電子顕微鏡写真である。
FIG. 7 is a 3000 × electron micrograph showing the metallographic structure of the surface layer of the wire of Example No. 24.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 重量%でSiを0.10%以上、および/また
はMnを0.20%以上含有する鋼ソリッドワイヤであって、
ワイヤ表層部において、粒内酸化物層を深さ2.5μm以
上有し、該粒内酸化物層は、直径0.1 〜4μmの粒状の
粒内酸化物を、0.1 〜3μmの細かいピッチで析出させ
て、断面積 100μm2 当たり10個以上有することを特徴
とするガスシールドアーク溶接用低スパッタソリッドワ
イヤ。
1. A steel solid wire containing at least 0.10% by weight of Si and / or at least 0.20% of Mn by weight%,
In the surface layer portion of the wire, the intragranular oxide layer has a depth of 2.5 μm or more, and the intragranular oxide layer precipitates granular intragranular oxide having a diameter of 0.1 to 4 μm at a fine pitch of 0.1 to 3 μm.
A low spatter solid wire for gas shielded arc welding, wherein the wire has at least 10 pieces per 100 μm 2 in cross section.
【請求項2】 重量%でSiを0.10%以上および/または
Mnを0.20%以上含有する鋼ソリッドワイヤを1000℃以上
で10秒以上、水蒸気を 0.1〜1.5 %含むN2ガス雰囲気
中で加熱し、表層部に粒内酸化物層を生成させることを
特徴とするガスシールドアーク溶接用低スパッタソリッ
ドワイヤの製造方法。
2% or more of Si by weight% and / or
A steel solid wire containing 0.20% or more of Mn is heated at 1000 ° C. or more for 10 seconds or more in an N 2 gas atmosphere containing 0.1 to 1.5% of steam to form an intragranular oxide layer on a surface layer. Of low spatter solid wire for gas shielded arc welding.
JP18574092A 1992-06-22 1992-06-22 Low spatter solid wire for gas shielded arc welding and method for producing the same. Expired - Lifetime JP2950390B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18574092A JP2950390B2 (en) 1992-06-22 1992-06-22 Low spatter solid wire for gas shielded arc welding and method for producing the same.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18574092A JP2950390B2 (en) 1992-06-22 1992-06-22 Low spatter solid wire for gas shielded arc welding and method for producing the same.

Publications (2)

Publication Number Publication Date
JPH06689A JPH06689A (en) 1994-01-11
JP2950390B2 true JP2950390B2 (en) 1999-09-20

Family

ID=16176035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18574092A Expired - Lifetime JP2950390B2 (en) 1992-06-22 1992-06-22 Low spatter solid wire for gas shielded arc welding and method for producing the same.

Country Status (1)

Country Link
JP (1) JP2950390B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3549393B2 (en) * 1998-05-12 2004-08-04 株式会社神戸製鋼所 Gas shielded arc welding wire

Also Published As

Publication number Publication date
JPH06689A (en) 1994-01-11

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