JP2948593B2 - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JP2948593B2 JP2948593B2 JP63209020A JP20902088A JP2948593B2 JP 2948593 B2 JP2948593 B2 JP 2948593B2 JP 63209020 A JP63209020 A JP 63209020A JP 20902088 A JP20902088 A JP 20902088A JP 2948593 B2 JP2948593 B2 JP 2948593B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- refractive index
- thickness
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は導電性薄膜表面での光の反射が低減された
透明導電性フイルムに関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film with reduced light reflection on the surface of a conductive thin film.
透明なプラスチツクフイルム基材の表面に酸化インジ
ウム（In2O3）またはこれと少量の酸化スズ（SnO2）と
の複合酸化物からなる透明な導電性薄膜を形成した透明
導電性フイルムは、透明電極や静電気フイルターとして
各種電子部品に使用されている。たとえばVDTフイルタ
ーやCRTデイスプレーに透明導電性フイルムを貼り付け
て、導電性薄膜を接地することにより、静電シールドや
電磁波シールドとして利用されている。A transparent conductive film, which is formed by forming a transparent conductive thin film composed of indium oxide (In 2 O 3 ) or a composite oxide of this and a small amount of tin oxide (SnO 2 ) on the surface of a transparent plastic film substrate, is transparent. It is used for various electronic components as electrodes and electrostatic filters. For example, by attaching a transparent conductive film to a VDT filter or CRT display and grounding the conductive thin film, it is used as an electrostatic shield or an electromagnetic wave shield.
しかるに、上記公知の透明導電性フイルムは、導電性
薄膜の前記材質に基づき透明性および導電性に非常にす
ぐれるという特徴を有しているものの、導電性薄膜の屈
折率が通常約２程度であるために、この薄膜表面での光
の反射が大きくなつて、外光などの影響でデイスプレー
の表示が見づらくなる、つまり視認性が悪くなるという
問題があつた。However, although the above-mentioned known transparent conductive film has a feature of being very excellent in transparency and conductivity based on the material of the conductive thin film, the refractive index of the conductive thin film is usually about 2 or so. For this reason, the light reflection on the surface of the thin film becomes large, and the display on the display becomes difficult to see due to the influence of external light and the like, that is, the visibility is deteriorated.
この問題を解決する方法として、透明導電性フイルム
の導電性薄膜上に反射防止用の誘電体薄膜を形成する方
法が考えられるが、この方法で有効な反射防止を達成す
るためには、フイルム基材と接触する高屈折率の導電性
薄膜とその上の誘電体薄膜との光学的膜厚を最適値に設
計する、たとえは設計波長に対し前者がλ/2、後者がλ
/4の関係を満たすようにすることが望まれる。As a method of solving this problem, a method of forming a dielectric thin film for anti-reflection on a conductive thin film of a transparent conductive film is considered, but in order to achieve effective anti-reflection by this method, a film base is required. The optical film thickness of the high refractive index conductive thin film in contact with the material and the dielectric thin film thereon is designed to an optimum value, for example, the former is λ / 2 and the latter is λ
It is desired to satisfy the relationship of / 4.
しかるに、この場合導電性薄膜の膜厚を一定の値に規
制する必要があるため、その膜厚を変化させることで用
途目的に応じた種々のフイルム抵抗を得ようとする場合
に大きな支障をきたす結果となる。However, in this case, it is necessary to regulate the film thickness of the conductive thin film to a constant value. Therefore, when the film thickness is changed, there is a great problem in obtaining various film resistors according to the purpose of use. Results.
したがつて、この発明は、導電性薄膜の膜厚を任意に
変化させることによつて用途目的に応じた広範囲のフイ
ルム抵抗を得ることができるうえに、この薄膜表面での
光の反射が低減された透明導電性フイルムを提供するこ
とを目的としている。Therefore, according to the present invention, by changing the thickness of the conductive thin film arbitrarily, it is possible to obtain a wide range of film resistance according to the purpose of use and to reduce the reflection of light on the surface of the thin film. It is an object of the present invention to provide a transparent conductive film.
この発明者らは、上記の目的を達成するために鋭意検
討した結果、酸化インジウムまたはこれと少量の酸化ス
ズとの複合酸化物からなる導電性薄膜の表面にこの薄膜
とほぼ同じ屈折率を有する誘電体薄膜を形成し、この上
にさらに低屈折率の他の誘電体薄膜を形成すれば、上記
導電性薄膜およびこれに接する下側の誘電体薄膜の合計
の膜厚と上側の低屈折率の誘電体薄膜の膜厚とを、前記
したような光の反射防止に適した光学的膜厚に設計する
ことで、薄膜表面での光の反射を大きく低減でき、この
場合導電性薄膜の膜厚自体は特に規制されずこの膜厚の
変化に応じてこれと接する下側の誘電体薄膜の膜厚を適
宜変えればよいため、導電性薄膜の膜厚の変化によつて
用途目的に応じた広範囲のフイルム抵抗を任意に得るこ
とができるものであることを知り、この発明を完成する
に至つた。The present inventors have conducted intensive studies in order to achieve the above object, and have found that the surface of a conductive thin film made of indium oxide or a composite oxide thereof and a small amount of tin oxide has almost the same refractive index as this thin film. If a dielectric thin film is formed, and another dielectric thin film having a low refractive index is further formed thereon, the total thickness of the conductive thin film and the lower dielectric thin film in contact with the conductive thin film and the lower refractive index of the upper conductive thin film become lower. By designing the film thickness of the dielectric thin film to an optical film thickness suitable for preventing light reflection as described above, light reflection on the surface of the thin film can be greatly reduced. The thickness itself is not particularly limited, and the thickness of the lower dielectric thin film in contact with the thickness may be appropriately changed according to the change in the thickness. It can freely obtain a wide range of film resistance. I know that, ItaruTsuta to the completion of this invention.
すなわち、この発明は、透明なプラスチツクフイルム
基材の表面に酸化インジウムまたはこれと酸化スズとの
複合酸化物からなる透明な導電性薄膜が形成され、さら
にこの上に1.9〜2.2の屈折率を有する無機酸化物薄膜
（以下、これを下側の誘電体薄膜という）と1.5以下の
屈折率を有する無機酸化物薄膜または弗化物薄膜（以
下、これを上側の誘電体薄膜という）とがこの順に形成
されてなり、上記の導電性薄膜の屈折率，膜厚をn0,
d0、上記の下側の誘電体薄膜の屈折率，膜厚をn1,d1、
上記の上側の誘電体薄膜の屈折率，膜厚をn2,d2とした
とき、設計波長λに対して、n1d1＝λ/2−n0d0、n2d2＝
λ/4の関係を満たすことを特徴とする透明導電性フイル
ムに係るものである。That is, according to the present invention, a transparent conductive thin film made of indium oxide or a composite oxide of tin oxide and indium oxide is formed on the surface of a transparent plastic film substrate, and further has a refractive index of 1.9 to 2.2. An inorganic oxide thin film (hereinafter referred to as a lower dielectric thin film) and an inorganic oxide thin film or a fluoride thin film having a refractive index of 1.5 or less (hereinafter referred to as an upper dielectric thin film) are formed in this order. The refractive index and thickness of the conductive thin film are set to n 0 ,
d 0 , the refractive index and film thickness of the lower dielectric thin film are n 1 , d 1 ,
Assuming that the refractive index and the film thickness of the upper dielectric thin film are n 2 and d 2 , n 1 d 1 = λ / 2−n 0 d 0 and n 2 d 2 =
The present invention relates to a transparent conductive film that satisfies the relationship of λ / 4.
この発明におけるプラスチツクフイルム基材の材料と
しては、透明性を有するものであればよく、具体的には
ポリエステル樹脂、ポリカーボネート樹脂、ポリアミド
樹脂、アクリル樹脂、ポリイミド樹脂などが挙げられ
る。これらの中でも特にポリエチレンテレフタレート
（PET）が耐熱性や透明性の点で好ましい。これらの材
料からなるプラスチツクフイルム基材の厚みとしては、
特に限定されないが、一般的に25〜200μｍ程度である
のがよい。The material of the plastic film substrate in the present invention may be any material having transparency, and specific examples include polyester resin, polycarbonate resin, polyamide resin, acrylic resin, and polyimide resin. Among these, polyethylene terephthalate (PET) is particularly preferred in terms of heat resistance and transparency. As the thickness of the plastic film base made of these materials,
Although not particularly limited, it is generally good to be about 25 to 200 μm.
このプラスチツクフイルム基材の表面に設けられる透
明な導電性薄膜は、酸化インジウム単独かこれに酸化ス
ズを少量加えた複合酸化物からなるものであつて、その
膜厚は所望のフイルム抵抗に応じて任意に設定すること
ができる。一般的には50〜2,000Åの範囲の膜厚に設定
にてフイルム抵抗が通常20〜1,000Ω／□程度となよう
にするのが好ましい。The transparent conductive thin film provided on the surface of the plastic film substrate is made of indium oxide alone or a composite oxide obtained by adding a small amount of tin oxide to the indium oxide, and its film thickness is determined according to the desired film resistance. It can be set arbitrarily. Generally, it is preferable to set the film thickness in the range of 50 to 2,000 mm so that the film resistance is usually about 20 to 1,000 Ω / □.
この導電性薄膜の上に接して設けられる下側の誘電体
薄膜は、上記の導電性薄膜の屈折率が約２程度であるた
めこれとほぼ同じ屈折率として、1.9〜2.2の屈折率を有
する無機酸化薄膜が用いられる。このような屈折率を有
するものとしては、たとえばY2O3、ZrO2、Ta2O5、Ce
O2、TiO2などが挙げられる。The lower dielectric thin film provided in contact with the conductive thin film has a refractive index of about 1.9 to 2.2, which is almost the same as the above-mentioned conductive thin film because the refractive index of the conductive thin film is about 2. An inorganic oxide thin film is used. As those having such a refractive index, for example, Y 2 O 3 , ZrO 2 , Ta 2 O 5 , Ce
O 2 and TiO 2 are exemplified.
この下側の誘電体薄膜の膜厚は、既述のとおり、導電
性薄増の膜厚に応じて決定されるものであり、導電性薄
膜の屈折率，膜厚をn0,d0、下側の誘電体薄膜の屈折
率，膜厚をn1,d1とすると、一般にn1d1＝λ/2−n0d0の
関係を満たすようにすればよい。一般的な膜厚範囲とし
ては、通常上限が2,000Å程度となる範囲である。As described above, the thickness of the lower dielectric thin film is determined according to the thickness of the conductive thin film, and the refractive index and the thickness of the conductive thin film are n 0 , d 0 , Assuming that the refractive index and the film thickness of the lower dielectric thin film are n 1 and d 1 , it is generally sufficient to satisfy the relationship of n 1 d 1 = λ / 2−n 0 d 0 . The general thickness range is a range where the upper limit is usually about 2,000 mm.
このような下側の誘電体薄膜上に設けられる上側の誘
電体膜薄は、その屈折率が1.5％以下、通常1.35〜1.48
程度となる低屈折率の無機酸化物薄膜または弗化物薄膜
からなるものであり、このような材料としては、たとえ
ばNa3AlF6、MgF2、CaF2、SiO2などが挙げられる。これ
らの中でも酸化安定剤や耐擦傷性などの耐久性にすぐれ
るSiO2またはMgF2が最も好ましい。The upper dielectric film thin film provided on the lower dielectric thin film has a refractive index of 1.5% or less, usually 1.35 to 1.48.
It is made of an inorganic oxide thin film or a fluoride thin film having a low refractive index, which has a low refractive index. Examples of such a material include Na 3 AlF 6 , MgF 2 , CaF 2 , and SiO 2 . Among them, SiO 2 or MgF 2 having excellent durability such as an oxidation stabilizer and scratch resistance are most preferable.
この上側の誘電体薄膜の膜厚は、その光学的膜厚がλ
/4、つまりこの薄膜の屈折率，膜厚をn2,d2とするとn2d
2＝λ/4となるように設定すればよい。一般的な膜厚範
囲としては、800〜1,200Å程度である。The film thickness of the upper dielectric thin film is such that its optical film thickness is λ.
/ 4, that is, if the refractive index and thickness of this thin film are n 2 and d 2 , n 2 d
What is necessary is just to set so that 2 = λ / 4. A typical film thickness range is about 800 to 1200 °.
この発明において、上記の各薄膜つまり導電性薄膜と
下側および上側の誘電体薄膜の形成は、いずれも真空蒸
着法、イオンプレーテイング法、スパツタリング法など
の公知の各種薄膜形成法を採用して行うことができる。In the present invention, each of the above-mentioned thin films, that is, the conductive thin film and the lower and upper dielectric thin films are formed by using various known thin film forming methods such as a vacuum evaporation method, an ion plating method, and a sputtering method. It can be carried out.
この発明の透明導電性フイルムは、これをたとえばデ
イスプレーの帯電防止または電磁波シールド用として使
用する場合、ガラス板やプラスチツク板の両面または片
面に接着して用いればよく、片面に接着する場合は他方
の面に公知の方法で適宜反射防止処理を施すかあるいは
反射防止フイルムを接着してもよい。また、デイスプレ
ーに直接接着して用いてもよく、デイスプレー表面が曲
面の場合、その曲面に合せて予め加工したうえで接着す
ればよい。これら使用法において、その接着後導電性薄
膜を接地することにより、帯電防止または電磁波シール
ド効果をより良く発現させることができる。The transparent conductive film of the present invention may be used by bonding it to both sides or one side of a glass plate or a plastic plate when it is used, for example, for antistatic display or electromagnetic wave shielding, and when it is bonded to one side, the other side. The surface may be appropriately subjected to an anti-reflection treatment by a known method, or an anti-reflection film may be adhered. Further, it may be used by directly bonding to the display, and when the display surface is a curved surface, it may be bonded after processing in advance to the curved surface. In these methods of use, by grounding the conductive thin film after bonding, the antistatic or electromagnetic wave shielding effect can be better exhibited.
以上のように、この発明によれば、透明なプラスチツ
クフイルム基材の表面に設けられた酸化インジウムまた
はこれと酸化スズとの複合酸化物からなる透明な導電性
薄膜上に屈折率の限定された特定の誘電体薄膜を２層積
層する構成としたことにより、薄膜表面での光の反射を
著しく低減できるうえに、導電性薄膜の膜厚の変化によ
つて用途目的に応じた広範囲のフイルム抵抗を得ること
が可能な透明導電性フイルム提供できるものである。As described above, according to the present invention, the refractive index is limited on a transparent conductive thin film made of indium oxide or a composite oxide of tin oxide and indium oxide provided on the surface of a transparent plastic film substrate. By adopting a configuration in which two layers of a specific dielectric thin film are laminated, light reflection on the surface of the thin film can be remarkably reduced, and a change in the thickness of the conductive thin film enables a wide range of film resistance depending on the purpose of use. Can be provided.
以下に、この発明の実施例を記載してより具体的に説
明する。Hereinafter, embodiments of the present invention will be described in more detail.
実施例１ 透明なプラスチツクフイルム基材として厚さ100μｍ
のPETフイルムを用い、このPETフイルムの表面に酸化イ
ンジウムと少量の酸化スズとからなる屈折率が1.95の複
合酸化物薄膜（以下、ITO薄膜という）をスパツタリン
グ法によりフイルム抵抗が100Ω／□となるように600Å
の膜厚に形成した。Example 1 100 μm thick transparent plastic film substrate
Using a PET film, a composite oxide thin film consisting of indium oxide and a small amount of tin oxide with a refractive index of 1.95 (hereinafter referred to as ITO thin film) is formed on the surface of the PET film to a film resistance of 100Ω / □ by a sputtering method. 600Å
Was formed.
つぎに、このITO薄膜上に屈折率が2.05であるZrO2薄
膜をn1d1＝λ/2−n0d0の関係を満たすようにマグネトロ
ンスパツタリング法で720Åの膜厚に形成し、さらにこ
のZrO2薄膜上に屈折率が1.46であるSiO2薄膜をマグネト
ロンスパツタリング法で900Åの膜厚に形成して、図面
に示す構造のこの発明の透明導電性フイルムとした。Next, a ZrO 2 thin film having a refractive index of 2.05 was formed on this ITO thin film to a thickness of 720 ° by a magnetron sputtering method so as to satisfy the relationship of n 1 d 1 = λ / 2−n 0 d 0. Further, an SiO 2 thin film having a refractive index of 1.46 was formed on the ZrO 2 thin film to a thickness of 900 ° by magnetron sputtering to obtain a transparent conductive film of the present invention having a structure shown in the drawing.
なお、図面中、１はPEKフイルムからなるプラスチツ
クフイルム基材、２はITO薄膜からなる導電性薄膜、３
はZrO2薄膜からなる下側の誘電体薄膜、４はSiO2薄膜か
らなる上側の誘電体薄膜である。In the drawings, 1 is a plastic film base made of PEK film, 2 is a conductive thin film made of ITO thin film, 3
Is a lower dielectric thin film made of a ZrO 2 thin film, and 4 is an upper dielectric thin film made of a SiO 2 thin film.
この透明導電性フイルムは、透明性にすぐれていると
ともに、波長400〜700nmの可視光の平均反射率が約0.7
％と小さく、しかも荷重100g/cm2のガーゼ擦傷試験にお
いて100回往復させても、フイルム抵抗および反射率の
変化がみられない耐久性に非常にすぐれたものであつ
た。This transparent conductive film has excellent transparency and an average reflectance of visible light having a wavelength of 400 to 700 nm of about 0.7.
%, And even when reciprocated 100 times in a gauze abrasion test with a load of 100 g / cm 2 , the durability was very good with no change in film resistance and reflectance.
なお、ITO薄膜上にZrO2薄膜およびSiO2薄膜を形成し
なかつたときの上記平均反射率は14％と高いものであつ
た。When the ZrO 2 thin film and the SiO 2 thin film were not formed on the ITO thin film, the average reflectance was as high as 14%.
実施例２ 厚さ100μｍのPETフイルムの表面に実施例１と同様に
してフイルム抵抗が300Ω／□となるように膜厚が200Å
のITO薄膜を形成し、この上に真空蒸着法でZrO2薄膜を
1,100Åの膜厚に形成し、さらにこの上にイオンプレー
テイング法で屈折率が1.38であるMgF2薄膜を940Åの膜
厚に形成して、図面に示すものと同じ構造のこの発明の
透明導電性フイルムとした。このフイルムの可視光の平
均反射率は約0.4％であつた。Example 2 A film having a thickness of 200 mm was formed on the surface of a PET film having a thickness of 100 μm in the same manner as in Example 1 so that the film resistance became 300 Ω / □.
ITO thin film is formed, and a ZrO 2 thin film is
A MgF 2 thin film having a refractive index of 1.38 was formed to a thickness of 940 mm by ion plating on the transparent conductive film of the present invention having the same structure as shown in the drawing. Film. The average reflectance of this film for visible light was about 0.4%.
なお、ITO薄膜上にZrO2薄膜およびMgF2薄膜を形成し
なかつたときの平均反射率は９％と高かつた。The average reflectance when the ZrO 2 thin film and the MgF 2 thin film were not formed on the ITO thin film was as high as 9%.
図面はこの発明の透明導電性フイルムの一例を示す断面
図である。 １……プラスチツクフイルム基材、２……導電性薄膜、
３……屈折率1.9〜2.2の無機酸化物薄膜（下側の誘電体
薄膜）、４……屈折率1.5以下の無機酸化物薄膜または
弗化物薄膜（上側の誘電体薄膜）The drawing is a sectional view showing an example of the transparent conductive film of the present invention. 1 ... Plastic film substrate, 2 ... Conductive thin film,
3 ... Inorganic oxide thin film having a refractive index of 1.9 to 2.2 (lower dielectric thin film) 4 ... Inorganic oxide thin film or fluoride thin film having a refractive index of 1.5 or less (upper dielectric thin film)
フロントページの続き (56)参考文献 特開 昭60−17421（ＪＰ，Ａ) 特開 昭60−246508（ＪＰ，Ａ) 特開 昭60−81047（ＪＰ，Ａ) 特開 平１−191101（ＪＰ，Ａ) 実開 昭63−143827（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01B 5/14 G02B 1/10 H05K 9/00 Continuation of the front page (56) References JP-A-60-17421 (JP, A) JP-A-60-246508 (JP, A) JP-A-60-81047 (JP, A) JP-A-1-191101 (JP) , A) Fully open 1988-643827 (JP, U) (58) Fields investigated (Int. Cl. 6 , DB name) H01B 5/14 G02B 1/10 H05K 9/00
Claims (3)
酸化インジウムまたはこれと酸化スズとの複合酸化物か
らなる透明な導電性薄膜が形成され、さらにこの上に1.
9〜2.2の屈折率を有する無機酸化物薄膜と1.5以下の屈
折率を有する無機酸化物薄膜または弗化物薄膜とがこの
順に形成されてなり、上記の導電性薄膜の屈折率，膜厚
をn0,d0、上記の1.9〜2.2の屈折率を有する無機酸化物
薄膜の屈折率，膜厚をn1,d1、上記の1.5以下の屈折率を
有する無機酸化物薄膜または弗化物薄膜の屈折率，膜厚
をn2,d2としたとき、設計波長λに対して、n1d1＝λ/2
−n0d0、n2d2＝λ/4の関係を満たすことを特徴とする透
明導電性フイルム。1. A transparent conductive thin film made of indium oxide or a composite oxide of tin oxide and indium oxide is formed on the surface of a transparent plastic film substrate.
An inorganic oxide thin film having a refractive index of 9 to 2.2 and an inorganic oxide thin film or a fluoride thin film having a refractive index of 1.5 or less are formed in this order. 0 , d 0 , the refractive index of the inorganic oxide thin film having a refractive index of 1.9 to 2.2, the film thickness n 1 , d 1 , the inorganic oxide thin film or the fluoride thin film having a refractive index of 1.5 or less When the refractive index and the film thickness are n 2 and d 2 , n 1 d 1 = λ / 2 with respect to the design wavelength λ.
A transparent conductive film, which satisfies a relationship of −n 0 d 0 and n 2 d 2 = λ / 4.
がY2O3、ZrO2、Ta2O5、CeO2またはTiO2からなる請求項
（１）に記載の透明導電性フイルム。2. The transparent conductive film according to claim 1, wherein the inorganic oxide thin film having a refractive index of 1.9 to 2.2 is made of Y 2 O 3 , ZrO 2 , Ta 2 O 5 , CeO 2 or TiO 2. .
または弗化物薄膜がSiO2またはMgF2からなる請求項
（１）または（２）に記載の透明導電性フイルム。3. The transparent conductive film according to claim 1, wherein the inorganic oxide thin film or the fluoride thin film having a refractive index of 1.5 or less is made of SiO 2 or MgF 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63209020A JP2948593B2 (en) | 1988-08-22 | 1988-08-22 | Transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63209020A JP2948593B2 (en) | 1988-08-22 | 1988-08-22 | Transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0256811A JPH0256811A (en) | 1990-02-26 |
| JP2948593B2 true JP2948593B2 (en) | 1999-09-13 |
Family
ID=16565938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63209020A Expired - Lifetime JP2948593B2 (en) | 1988-08-22 | 1988-08-22 | Transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2948593B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09265003A (en) * | 1996-03-29 | 1997-10-07 | Shin Etsu Chem Co Ltd | Antireflection film for faraday rotator and optical isolator |
| US5811923A (en) * | 1996-12-23 | 1998-09-22 | Optical Coating Laboratory, Inc. | Plasma display panel with infrared absorbing coating |
| JP5425351B1 (en) * | 2012-03-23 | 2014-02-26 | 積水ナノコートテクノロジー株式会社 | Light transmissive conductive film, method for producing the same, and use thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017421A (en) * | 1983-07-09 | 1985-01-29 | Konishiroku Photo Ind Co Ltd | Electrically conductive transparent film |
| JPS6081047A (en) * | 1983-10-06 | 1985-05-09 | Toyota Motor Corp | Window glass for electromagnetic shielding |
| JPS60246508A (en) * | 1985-04-05 | 1985-12-06 | トヨタ自動車株式会社 | Low reflective transparent conductive thin film with protective film |
| JPH01191101A (en) * | 1988-01-26 | 1989-08-01 | Canon Inc | Reflection preventive film |
-
1988
- 1988-08-22 JP JP63209020A patent/JP2948593B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0256811A (en) | 1990-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6014196A (en) | Transparent electrically conductive film-attached substrate | |
| KR19990083219A (en) | Electromagnetic wave filter for plasma display panel | |
| JPH0832436B2 (en) | Transparent conductive laminate | |
| JP4349794B2 (en) | Method for producing conductive transparent substrate with multilayer antireflection film | |
| JP2948593B2 (en) | Transparent conductive film | |
| CN112306277B (en) | Touch panel | |
| JP3713774B2 (en) | Transparent electromagnetic shielding board | |
| US7655280B2 (en) | Extreme low resistivity light attenuation anti-reflection coating structure and method for manufacturing the same | |
| JPH09221340A (en) | Substrate with transparent conductive film | |
| JP4172049B2 (en) | Transparent conductive film | |
| JP3592830B2 (en) | Display element substrate | |
| JP2848266B2 (en) | Transparent electromagnetic wave shield substrate | |
| KR100780284B1 (en) | Filter for plasma display panel and plasma display panel apparatus employing thereof | |
| JPH01168855A (en) | Transparent sheet coated with antireflection film containing metal film | |
| JPH01180501A (en) | Transparent plate adhered with antireflection film having metallic film | |
| US20090092808A1 (en) | Extreme low resistivity light attenuation anti-reflection coating structure and method for manufacturing the same | |
| US7833628B2 (en) | Coating structure with an anti-reflection function and an anti-electromagnetic wave function | |
| JP2003062920A (en) | Antireflection film | |
| JPH1123804A (en) | Electrically conductive antireflection film | |
| JP2000329934A (en) | Transparent electrically conductive film | |
| JP2647720B2 (en) | Transparent conductive laminate | |
| JP2531734B2 (en) | Transparent body with anti-reflection coating including metal film | |
| US7771848B2 (en) | Extreme low resistivity light attenuation anti-reflection coating structure and method for manufacturing the same | |
| JPH10309778A (en) | Laminate | |
| JP2004175074A (en) | Transparent substrate with multilayer film having electroconductivity |