JP2945440B2 - Method for manufacturing solid-state imaging device - Google Patents
Method for manufacturing solid-state imaging deviceInfo
- Publication number
- JP2945440B2 JP2945440B2 JP2115963A JP11596390A JP2945440B2 JP 2945440 B2 JP2945440 B2 JP 2945440B2 JP 2115963 A JP2115963 A JP 2115963A JP 11596390 A JP11596390 A JP 11596390A JP 2945440 B2 JP2945440 B2 JP 2945440B2
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- imaging device
- state imaging
- resin layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 13
- 239000011347 resin Substances 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 35
- 239000012780 transparent material Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
本発明は、受光部の上の集光用のマイクロレンズを有
する固体撮像装置の製造方法に関する。The present invention relates to a method for manufacturing a solid-state imaging device having a light collecting microlens on a light receiving unit.
従来、この種の固体撮像装置の製造方法としては、第
２図に示すようなものがある。 第２図は、上記固体撮像装置の製造方法により半導体
基板上にマイクロレンズを製造する工程を（Ａ）→
（Ｂ）→（Ｃ）→（Ｄ）→（Ｅ）の順に示す断面図であ
る。 （Ａ）まず、複数の受光部11および電荷転送部12を有す
る半導体基板13上に、透明な平坦化層14を形成する。 （Ｂ）上記透明な平坦化層14上に透明材料層15を形成す
る。 （Ｃ）上記透明材料層15上に、熱軟化性レジスト層16を
塗布する。その後、上記軟化性レジスト層16を露光し
て、上記受光部11に対応するパターンを形成する。 （Ｄ）上記パターン形成した熱軟化性レジスト層16を加
熱して、凸レンズ形に熱変形させる。 （Ｅ）上記凸レンズ形に熱変形した熱軟化性レジスト層
16および上記透明材料層15を異方性エッチングする。す
ると、上記凸レンズ形の熱軟化性レジスト層16の形が、
上記透明材料層15の形に反映して、上記透明材料層15
は、凸レンズ形となって、マイクロレンズを形成する。Conventionally, as a method for manufacturing this type of solid-state imaging device, there is a method as shown in FIG. FIG. 2 shows a step of manufacturing a microlens on a semiconductor substrate by the above-described method for manufacturing a solid-state imaging device (A) →
It is sectional drawing shown in order of (B)->(C)->(D)-> (E). (A) First, a transparent flattening layer 14 is formed on a semiconductor substrate 13 having a plurality of light receiving sections 11 and charge transfer sections 12. (B) A transparent material layer 15 is formed on the transparent flattening layer 14. (C) On the transparent material layer 15, a heat-softening resist layer 16 is applied. Thereafter, the softening resist layer 16 is exposed to form a pattern corresponding to the light receiving section 11. (D) The patterned heat-softening resist layer 16 is heated to be thermally deformed into a convex lens shape. (E) a thermally softenable resist layer thermally deformed into the above convex lens shape
16 and the transparent material layer 15 are anisotropically etched. Then, the shape of the heat-softening resist layer 16 having the convex lens shape is
Reflecting on the shape of the transparent material layer 15, the transparent material layer 15
Has a convex lens shape to form a micro lens.
ところで、固体撮像装置の感度を向上させるために、
その受光部上に形成するマイクロレンズの形状がばらつ
くと、上記固体撮像装置の感度が不均一になって、その
商品価値を著しく損なう。したがって、上記マイクロレ
ンズの形状は均一であることが重要である。 しかしながら、上記従来の固体撮像装置の製造方法で
は、次のような問題点がある。すなわち、第２図（Ｄ）
の工程で形成した熱軟化性レジスト層16の凸レンズ形を
正確に透明材料層15の形に反映させて均一な形状のマイ
クロレンズを形成するためには、第２図（Ｅ）の工程の
異方性エッチングは、高精度で、かつ均一にしなければ
ならない。ところが、異方性エッチングは、そのエッチ
ング量をエッチング時間のみで制御するものであるの
で、上記異方性エッチングを高精度かつ均一にするため
には、そのエッチング速度および透明材料層15や熱軟化
性レジスト層16の厚さを、個々の半導体基板内だけでな
く各半導体基板間やその製造ロット間においても、均一
にしなければならず、上記異方性エッチングの精度と均
一性を維持することは非常に難しく、均一で安定な形状
のマイクロレンズを形成することが非常に難しいという
問題がある。 そこで、本発明の目的は、均一で精度の高い形状のマ
イクロレンズを容易に形成できる固体撮像装置の製造方
法を提供することにある。By the way, in order to improve the sensitivity of the solid-state imaging device,
If the shape of the microlenses formed on the light receiving portion varies, the sensitivity of the solid-state imaging device becomes non-uniform, and the commercial value thereof is significantly impaired. Therefore, it is important that the shape of the microlens is uniform. However, the conventional method of manufacturing a solid-state imaging device has the following problems. That is, FIG. 2 (D)
In order to accurately reflect the convex lens shape of the heat-softening resist layer 16 formed in the step (3) on the shape of the transparent material layer 15 and form a microlens having a uniform shape, the steps shown in FIG. Anisotropic etching must be accurate and uniform. However, in the anisotropic etching, the amount of etching is controlled only by the etching time. Therefore, in order to make the anisotropic etching highly accurate and uniform, the etching rate and the transparent material layer 15 or thermal softening are required. The thickness of the conductive resist layer 16 must be uniform not only within each individual semiconductor substrate but also between each semiconductor substrate and between its production lots, and maintain the accuracy and uniformity of the anisotropic etching. Is very difficult, and it is very difficult to form a microlens having a uniform and stable shape. Accordingly, an object of the present invention is to provide a method for manufacturing a solid-state imaging device that can easily form a microlens having a uniform and high-precision shape.
上記目的を達成するため、本発明の固体撮像装置の製
造方法は、複数の受光部および電荷転送部を有する固体
撮像素子を形成した半導体基板上に透明材料層を形成す
る工程と、 上記透明材料層上に、熱硬化性を有する感光性樹脂層
を形成する工程と、 上記感光性樹脂層を露光して、上記感光性樹脂層に上
記受光部に対応する感光性樹脂パターンを形成する工程
と、 上記感光性樹脂パターンを、紫外線照射によって脱色
して、透明度を上げる工程と、 上記紫外線照射により透明度が上げられた上記感光性
樹脂パターンを加熱することにより、熱変形させてマイ
クロレンズを形成すると共に、硬化させる工程とを有す
ることを特徴としている。In order to achieve the above object, a method for manufacturing a solid-state imaging device according to the present invention includes a step of forming a transparent material layer on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving units and a charge transfer unit is formed; A step of forming a thermosetting photosensitive resin layer on the layer, and a step of exposing the photosensitive resin layer to form a photosensitive resin pattern corresponding to the light receiving portion on the photosensitive resin layer. A step of decolorizing the photosensitive resin pattern by irradiating ultraviolet rays to increase transparency; and heating the photosensitive resin pattern of which transparency is increased by irradiating ultraviolet rays to thermally deform to form a microlens. And a curing step.
半導体基板上に形成した透明材料層上に形成された感
光性樹脂層は露光され、上記半導体基板の受光部に対応
するパターンが形成される。次に、上記パターンが形成
された感光性樹脂層は、紫外線を照射されて、脱色さ
れ、透明度が上げられる。次に、上記透明度が上げられ
た感光性樹脂層は、加熱され、熱変形させられてマイク
ロレンズになる。したがって、従来の如き、熱軟化性レ
ジスト層16の形状を透明材料層15に反映させるために加
工精度を得ることが難しい異方性エッチングをすること
が不要であって、均一な形状のマイクロレンズを容易に
形成できる。また、上記感光性樹脂層として、紫外線照
射により光透過率が向上し、かつ、熱硬化性を有するも
のを用いているから、光透過率が優れる上に、耐久性の
高いマイクロレンズが形成される。The photosensitive resin layer formed on the transparent material layer formed on the semiconductor substrate is exposed, and a pattern corresponding to the light receiving portion of the semiconductor substrate is formed. Next, the photosensitive resin layer on which the pattern has been formed is irradiated with ultraviolet rays to be decolorized, thereby increasing the transparency. Next, the photosensitive resin layer having the increased transparency is heated and thermally deformed to form a microlens. Therefore, it is unnecessary to perform anisotropic etching in which it is difficult to obtain processing accuracy in order to reflect the shape of the heat-softening resist layer 16 on the transparent material layer 15 as in the related art, and a microlens having a uniform shape is unnecessary. Can be easily formed. In addition, as the photosensitive resin layer, a material having improved light transmittance by ultraviolet irradiation and having thermosetting properties is used, so that a microlens having high light transmittance and high durability is formed. You.
以下、本発明を図示の実施例により詳細に説明する。 第１図は、本発明の固体撮像装置の製造方法により半
導体基板上にマイクロレンズを形成する工程を（Ａ）→
（Ｂ）→（Ｃ）→（Ｄ）→（Ｅ）の順に示す断面図であ
る。 （Ａ）まず、複数の受光部１および電荷転送部２を有す
る半導体基板３上に、透明材料層５をスピンコート法に
より塗布して、平坦に形成する。 （Ｂ）上記透明材料層５上に、紫外線照射により光透過
率が向上し、かつ、熱硬化性を有するフェノールボラッ
ク系やポリスチレン系のポジ型感光性樹脂等からなる感
光性樹脂層６を形成する。そしてマスク７を介して、上
記感光性樹脂層６を受光部１に対応するパターンを形成
するために、露光、現像する。 （Ｃ）上記感光性樹脂層６をウエットエッチング等で加
工して受光部１に対応するパターンすなわち各ブロック
を形成する。 （Ｄ）上記パターン形成された感光性樹脂層６に紫外線
あるいは、より望ましくは350nm〜450nmの波長領域の光
８を照射することによって、上記感光性樹脂層６が含有
する感光剤等を脱色して、上記感光性樹脂層６の透明度
を高める。 （Ｅ）上記透明度が上げられた感光性樹脂層６を加熱し
て熱変形させてマイクロレンズ９を形成する。この加熱
の温度は、工程（Ｄ）における光８の照射量に対応し
て、例えば、150℃程度に設定する。 以上の工程においては、高い加工精度を得ることが難
しい従来の如き異方性エッチングというドライエッチン
グ技術の替りに、工程（Ｂ）のフォトリソグラフと工程
（Ｃ）のエッチングと工程（Ｅ）の熱処理によって、半
導体基板上にマイクロレンズを形成しているので、均一
な形状のマイクロレンズを容易に形成できて、たとえ
ば、第１図（Ｅ）に示すマイクロレンズ９の集光率を決
定する重要な因子であるマイクロレンズ間の間隔ｌと形
状ｒを所望の値に設定して、精度良く均一にマイクロレ
ンズを形成できる。しかも、工程（Ｄ）において、パタ
ーン形成された感光性樹脂層６の透明度を、紫外線照射
によって、高めているので、マイクロレンズ９の材料で
ある感光性樹脂層６の可視光領域の光透過率を90％以上
にできて、性能の良いマイクロレンズが形成できる。た
とえば、上記感光性樹脂層６の厚さが2.5μｍの場合、
波長領域350〜450nmの紫外線を250mJ/cm２だけ照射する
ことによって、上記感光性樹脂層６の可視光領域波長40
0nm〜700nmの光透過率を95.5％にすることができる。さ
らに、上記感光性樹脂層６は、熱硬化性を有しているの
で、工程（Ｅ）での加熱時に熱変形してマイクロレンズ
を形成すると同時に硬化して、その後の固体撮像装置の
組立工程時の高温処理や溶剤洗浄に対して十分な耐久性
を有するマイクロレンズを形成することができる。 尚、本実施例の工程（Ａ）において、透明材料層５の
下にカラーフィルタを形成した場合には、カラー固体撮
像装置を製造することができる。Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 shows a step of forming a microlens on a semiconductor substrate by the method of manufacturing a solid-state imaging device of the present invention (A) →
It is sectional drawing shown in order of (B)->(C)->(D)-> (E). (A) First, a transparent material layer 5 is applied on a semiconductor substrate 3 having a plurality of light receiving portions 1 and charge transfer portions 2 by a spin coating method to be formed flat. (B) On the transparent material layer 5, a photosensitive resin layer 6 made of a phenol volac-based or polystyrene-based positive photosensitive resin or the like whose light transmittance is improved by irradiation with ultraviolet light and has thermosetting properties is formed. Form. Then, the photosensitive resin layer 6 is exposed and developed through the mask 7 in order to form a pattern corresponding to the light receiving section 1. (C) The photosensitive resin layer 6 is processed by wet etching or the like to form a pattern corresponding to the light receiving section 1, that is, each block. (D) The photosensitive resin layer 6 on which the pattern is formed is irradiated with ultraviolet rays, or more preferably, with light 8 in a wavelength region of 350 nm to 450 nm, thereby decolorizing the photosensitive agent or the like contained in the photosensitive resin layer 6. Thus, the transparency of the photosensitive resin layer 6 is increased. (E) The microlens 9 is formed by heating and thermally deforming the photosensitive resin layer 6 having the increased transparency. The heating temperature is set to, for example, about 150 ° C. in accordance with the irradiation amount of the light 8 in the step (D). In the above steps, the photolithography in the step (B), the etching in the step (C), and the heat treatment in the step (E) are performed in place of the conventional dry etching technique called anisotropic etching in which it is difficult to obtain high processing accuracy. As a result, since the microlens is formed on the semiconductor substrate, a microlens having a uniform shape can be easily formed. For example, it is important to determine the light collection rate of the microlens 9 shown in FIG. By setting the distance l between the microlenses and the shape r, which are factors, to desired values, the microlenses can be formed accurately and uniformly. Moreover, in the step (D), the transparency of the patterned photosensitive resin layer 6 is increased by irradiating ultraviolet rays, so that the light transmittance of the photosensitive resin layer 6 which is the material of the microlenses 9 in the visible light region is increased. To 90% or more, and a microlens with good performance can be formed. For example, when the thickness of the photosensitive resin layer 6 is 2.5 μm,
By irradiating ultraviolet rays in a wavelength region of 350 to 450 nm by 250 mJ / cm 2 , the photosensitive resin layer 6 has a visible light region wavelength of 40 mJ / cm 2.
The light transmittance from 0 nm to 700 nm can be 95.5%. Further, since the photosensitive resin layer 6 has a thermosetting property, it is thermally deformed at the time of heating in the step (E) to form a microlens and is cured at the same time. It is possible to form a microlens having sufficient durability against high-temperature treatment and solvent washing at the time. When a color filter is formed under the transparent material layer 5 in the step (A) of this embodiment, a color solid-state imaging device can be manufactured.
以上の説明より明らかなように、本発明の固体撮像装
置の製造方法は、露光してパターン形成した感光性樹脂
層を紫外線を照射して透明度を上げ、さらに加熱して、
マイクロレンズを形成しているので、従来の如き上層の
レンズ形状を下層に反映するための加工精度を得ること
が難しい異方性エッチング工程が不要であって、均一な
形状のマイクロレンズを有する高品質な固体撮像装置
を、容易に形成することができる。 上記感光性樹脂層が、紫外線照射により光透過率が向
上し、かつ、熱硬化性を有する樹脂からなるから、光透
過率が優れる上に、耐久性の高いマイクロレンズを形成
できて、特に高感度、高品質な固体撮像装置を容易に製
造することができる。As is clear from the above description, the method for manufacturing a solid-state imaging device of the present invention increases the transparency by irradiating the exposed and patterned photosensitive resin layer with ultraviolet rays, and further heats the photosensitive resin layer.
Since the microlenses are formed, there is no need for an anisotropic etching step, in which it is difficult to obtain processing accuracy for reflecting the lens shape of the upper layer in the lower layer as in the conventional case, and a high-level lens having a uniform-shaped microlens A high-quality solid-state imaging device can be easily formed. Since the photosensitive resin layer has improved light transmittance by ultraviolet irradiation and is made of a thermosetting resin, it has excellent light transmittance and can form a highly durable microlens. A solid-state imaging device with high sensitivity and high quality can be easily manufactured.
第１図は本発明の一実施例の固体撮像装置の製造方法を
示す断面図、第２図は従来の固体撮像装置の製造方法を
示す断面図である。 1,11…受光部、2,12…電荷転送部、3,13…半導体基板、
5,15…透明材料層、６…感光性樹脂層、７…マスク、9,
15…マイクロレンズ、14…透明な平坦化層、16…熱軟化
性レジスト層。FIG. 1 is a sectional view showing a method for manufacturing a solid-state imaging device according to one embodiment of the present invention, and FIG. 2 is a sectional view showing a method for manufacturing a conventional solid-state imaging device. 1,11… Light receiving part, 2,12… Charge transfer part, 3,13… Semiconductor substrate,
5, 15: transparent material layer, 6: photosensitive resin layer, 7: mask, 9,
15 ... microlens, 14 ... transparent flattening layer, 16 ... thermal softening resist layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 糸尾 剛 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (56)参考文献 特開 平３−286566（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Takeshi Itoh 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (56) References JP-A-3-286566 (JP, A)
Claims (1)
体撮像素子を形成した半導体基板上に透明材料層を形成
する工程と、 上記透明材料層上に、熱硬化性を有する感光性樹脂層を
形成する工程と、 上記感光性樹脂層を露光して、上記感光性樹脂層に上記
受光部に対応する感光性樹脂パターンを形成する工程
と、 上記感光性樹脂パターンを、紫外線照射によって脱色し
て、透明度を上げる工程と、 上記紫外線照射により透明度が上げられた上記感光性樹
脂パターンを加熱することにより、熱変形させてマイク
ロレンズを形成すると共に、硬化させる工程とを有する
ことを特徴とする固体撮像装置の製造方法。1. A step of forming a transparent material layer on a semiconductor substrate on which a solid-state imaging device having a plurality of light receiving sections and charge transfer sections is formed, and a thermosetting photosensitive resin layer on the transparent material layer. Forming the photosensitive resin layer, exposing the photosensitive resin layer to form a photosensitive resin pattern corresponding to the light receiving portion on the photosensitive resin layer, and decolorizing the photosensitive resin pattern by ultraviolet irradiation. A step of increasing the degree of transparency, and a step of heating the photosensitive resin pattern whose degree of transparency has been increased by the irradiation of ultraviolet rays to form a microlens by thermal deformation and curing. A method for manufacturing a solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2115963A JP2945440B2 (en) | 1990-05-02 | 1990-05-02 | Method for manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2115963A JP2945440B2 (en) | 1990-05-02 | 1990-05-02 | Method for manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0412568A JPH0412568A (en) | 1992-01-17 |
| JP2945440B2 true JP2945440B2 (en) | 1999-09-06 |
Family
ID=14675473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2115963A Expired - Lifetime JP2945440B2 (en) | 1990-05-02 | 1990-05-02 | Method for manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2945440B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8361824B2 (en) | 2009-05-12 | 2013-01-29 | Sharp Kabushiki Kaisha | Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2604890B2 (en) * | 1990-07-16 | 1997-04-30 | 松下電子工業株式会社 | Method for manufacturing solid-state imaging device |
| JPH0521769A (en) * | 1991-07-15 | 1993-01-29 | Sharp Corp | Solid-state image sensor |
| JP3789365B2 (en) | 2002-01-31 | 2006-06-21 | シャープ株式会社 | Semiconductor device with in-layer lens and method for manufacturing the same |
| JP2003229553A (en) | 2002-02-05 | 2003-08-15 | Sharp Corp | Semiconductor device and its manufacturing method |
| JP2004221487A (en) | 2003-01-17 | 2004-08-05 | Sharp Corp | Semiconductor device and method for manufacturing the same |
| JP4616565B2 (en) | 2004-02-16 | 2011-01-19 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| KR100606900B1 (en) * | 2004-12-21 | 2006-08-01 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method for fabricating the same |
| JP4576412B2 (en) | 2007-09-05 | 2010-11-10 | シャープ株式会社 | Manufacturing method of colored microlens array, color solid-state imaging device and manufacturing method thereof, manufacturing method of color display device, manufacturing method of electronic information device |
| JP2009218341A (en) | 2008-03-10 | 2009-09-24 | Panasonic Corp | Solid-state imaging device, and manufacturing method of the same |
| JP5086877B2 (en) | 2008-04-11 | 2012-11-28 | シャープ株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic information device |
| JP5565771B2 (en) | 2010-06-17 | 2014-08-06 | ルネサスエレクトロニクス株式会社 | Microlens manufacturing method and imaging device |
| JP2014154662A (en) | 2013-02-07 | 2014-08-25 | Sony Corp | Solid state image sensor, electronic apparatus, and manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03286566A (en) * | 1990-04-03 | 1991-12-17 | Toshiba Corp | Manufacture of solid-state image sensing element |
-
1990
- 1990-05-02 JP JP2115963A patent/JP2945440B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8361824B2 (en) | 2009-05-12 | 2013-01-29 | Sharp Kabushiki Kaisha | Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device |
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| Publication number | Publication date |
|---|---|
| JPH0412568A (en) | 1992-01-17 |
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