JP2944013B2 - Optical scanning type liquid crystal display element and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical scanning type liquid crystal display device.

[0002]

2. Description of the Related Art Matrix type liquid crystal display (LCD)
In recent years, there has been an increasing demand for larger capacity. That is, it is required that the number of picture elements be increased from 400 × 600 to 1000 × 1000 or more with the increase in resolution of display devices, and the size of the display screen is also increased from 10 inches to 20 inches or more. Although it is required to increase the size, in an active matrix drive type LCD, particularly a thin film transistor (TFT) drive type LCD,
The wiring resistance increases as the number of scanning lines increases, and the signal resistance is delayed due to the wiring resistance and the stray capacitance. There is a problem that the voltage ratio between a pixel and a non-selected pixel cannot be obtained. In order to solve these problems, there has been proposed a high-resolution liquid crystal display device capable of easily increasing a picture element driving current by using an optical switching function (Toray Industries, Inc .: JP-A-1-1730).
16, Casio Computer Co., Ltd .: JP-A-1-224727,
Matsushita Electric Industrial Co., Ltd .: JP-A-2-89029, Seiko Epson Corporation: JP-A-2-134617, Sharp Corp .: JP-A-3-263647, and the like.

A method of driving an active matrix drive type liquid crystal display device of an optical address type liquid crystal display device (optical scanning type liquid crystal display device) will be described below with reference to the drawings. FIG. 1 is a plan view showing the configuration of an active matrix drive type LCD of the optical address type. FIG. 2 shows A-
FIG. 3 is a sectional view taken along line A. In the plan view shown in FIG. 1, the glass substrate 5b, the light-shielding layer 10, and the alignment film 9 shown in the sectional view of FIG.
b, the transparent electrode 6, the seal 7, the spacer 14, and the liquid crystal layer 8 are omitted.

As shown in FIGS. 1 and 2, a plurality of linear light sources Y ₁ , Y ₂ ,.
_n-1, Y _n are arranged along the Y direction, a plurality of linear electrodes X ₁ to cross over _{these, X 2, ..., X m} -1,
_Xm are arranged along the X direction.

Each linear light source Y ₁ , Y ₂ ,..., Y _n-1 , Y
_n , for example, the linear light source Y ₂ is formed in a light emitting unit 1 such as an LED array element or an LD array element, a linear light guide 2 that transmits light from the light emitting unit 1, and a linear light guide 2. When the light emitting unit 1 emits light, the light propagates through the linear light guide path 2, and the light is emitted above the substrate by the light extracting unit 16.

Each linear light source Y ₁ , Y ₂ ,..., Y _n-1 , Y
_n and linear electrodes _{X 1, X 2, ...,} X m- 1, the intersection of the X _m, i.e. the linear light-emitting source _{Y 1, Y 2, ...,} Y n-1, Y n
The optical switch elements 3 each composed of a photoconductor layer are provided on the light extraction section 16 of the optical switch. Linear electrode X ₁ ,
X ₂ ,..., X _m−1 , X _m and the pixel electrode 4 for driving the liquid crystal as a display medium are formed on the same plane.
The above-described optical switch elements 3 are provided between the linear electrodes X ₁ , X ₂ ,..., X _m−1 , X _m and the pixel electrodes 4, respectively.

A transparent electrode 6 is provided on the other glass substrate 5b, and a liquid crystal layer 8 is sealed between the above-mentioned substrate and the sealing material 7.

When the optical switch element 3 is irradiated with light, that is, when the linear light source Y ₂ emits light, the impedance of the optical switch element 3 is reduced, and the signal from the linear electrode X ₁ is applied to the picture element electrode 4. When applied, the alignment state of the liquid crystal changes.

The linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n
Is scanned by sequentially emitting light from Y ₁ to Y _n , and in accordance with the scanning, electric signals are output in the form of linear electrodes X ₁ , X ₂ ,.
It applied to X _m-1, X _m. Linear light sources Y ₁ , Y ₂ ,..., Y
_n-1, Y _n period that is emitting light, the light switching element on the linear light-emitting source is turned on, the linear electrodes X _1, X
₂ ,..., X _m−1 , X _m are applied to the respective pixel electrodes 4. That is, linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y
_The optical switch element 3 is scanned by the optical signal from _n .

[0010]

In an optical scanning type liquid crystal display device, a light guide path forming technique and a light extraction method are important element techniques for controlling light for switching a liquid crystal. It has been proposed to form a highly reliable and low-loss light guide path by fusing optical fibers (Sharp Corporation: Japanese Patent Application No. 4-473).
9).

On the other hand, as a light extraction method, there is a method in which a light guide path is damaged and light is scattered to take out the light (Casio Computer Co., Ltd .: Japanese Patent Application Laid-Open No. 1-224727, etc.), or an upper cladding layer of the light guide path is removed. Method of forming a film having a high refractive index by using a light source (Seiko Epson Corporation: Japanese Patent Laid-Open No. 2-13)
4617, et al.).

However, in the method of scattering light by scratching, it is difficult to control the amount of light taken out in processing, and there is a problem that an upper clad layer must be patterned to form a film having a high refractive index. .

Accordingly, an object of the present invention is to provide a large-capacity and high-resolution optical scanning type liquid crystal display device.

[0014]

To achieve the above object, according to the solution to ## in the present invention, in the optical scanning-type liquid crystal display device, linear
The light guide has a core layer and a clad layer having different refractive indexes.
Optical fiber and
It is embedded so that the cladding layer is exposed, and
With the photoconductor layer of the cladding layer of the linear light guide exposed at
High index of refraction formed by ion exchange method at the corresponding location
A light extraction part consisting of a part is formed, and a linear light guide path is formed.
Light propagating through the core layer of the
It is led to the conductor layer.

[0015] To achieve the above object, the present invention provides:
In the manufacturing method of the optical scanning type liquid crystal display element, the refractive index is different.
An optical fiber having a core layer and a cladding layer
A step of embedding the inside of the substrate by fusion, and then polishing the substrate surface.
A step of exposing the clad layer on the substrate surface by polishing
To form a linear light guide path, and the line exposed on the substrate surface
In the place corresponding to the photoconductor layer of the cladding layer of the shape light guide path,
Light extraction part consisting of high refractive index part using ion exchange method
To form

Here, the ion exchange method as one of the methods for accurately patterning a high refractive index portion on a glass substrate is performed by replacing sodium ions (Na ⁺ ) of soda glass with monovalent metal ions. This is a method of forming a refractive index portion. Silver ion (Ag ⁺ ) as a monovalent metal ion,
There are thallium ions (Tl ⁺ ) and the like, and the refractive index change (Δ
n) is Δn = 2~8 × 10 ^-2 in Ag ^+, Δn ≧ by Tl ⁺
0.1 (Nishihara et al., “Optical Integrated Circuit”: Ohmsha).

[0017]

When the light from the linear light emitting source is irradiated, the impedance of the photoconductor layer is reduced and the photoconductor layer is turned on. As a result, the signal from the linear electrode is transmitted through the photoconductor layer to the liquid crystal layer. Are applied to the picture elements of the photoconductor layer. As a means for irradiating the photoconductor layer with light from the linear light emitting source, a linear light guide path is used.
Is an optical filter having a core layer and a clad layer having different refractive indexes.
Fiber and a crack on the substrate surface.
Buried so that the exposed layer is exposed, and
Corresponding to the photoconductor layer of the cladding layer of the drawn linear light guide
In place, from the high refractive index part formed using the ion exchange method
Light extraction part is formed, the core of the linear light guide
Light propagating through the layer passes through the light extraction section
As a result, the light propagation characteristics of the light guide path are guaranteed, and the light from the light emitting source can be guided to the optical switch section with high accuracy and high efficiency.

[0018]

Embodiment 1 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing a basic structure of an optical addressing type driving LCD as an embodiment of the liquid crystal display device according to the present invention, and FIG. 2 is a first view of the liquid crystal display device according to the present invention.
FIG. 3 is a cross-sectional view showing a basic structure of an optically addressable driving type LCD which is an embodiment of the present invention. Here, the cross-sectional view of FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1, and the detailed configuration and principle of the light guide path unit in FIG. 2 are shown in FIG. FIG. 4 illustrates a process of forming a light guide path, and FIG. 5 illustrates a process of forming a light extraction unit by an ion exchange method.

In the plan view shown in FIG. 1, the glass substrate 5b, the transparent electrode 6, the liquid crystal layer 8, the spacer 14, and the seal 7 shown in the sectional view of FIG. 2 are omitted.

As shown in FIGS. 1 and 2, a plurality of linear light sources Y ₁ , Y ₂ ,.
Y _n-1, Y _n and Y ₁ from Y _n are arranged along the Y direction, a plurality of linear electrodes X ₁ to cross over these, X
₂ , ..., _Xm-1 and _Xm are arranged along the X direction.

Each linear light source Y ₁ , Y ₂ ,..., Y _n-1 , Y
_n , for example, the linear light source Y ₂ includes a light emitting section 1 formed by an LED array element or an LD array element, a linear light guide path 2 for transmitting light from the light emitting section 1, and a substrate from the linear light guide path 2. is composed of a light extraction portion 16 for taking out upwardly, by the light emitting portion 1, light is propagated throughout the linear light-emitting source Y _2. Each linear light source Y ₁ , Y ₂ ,
, Y _n-1 , Y _n linear electrodes X ₁ , X ₂ , ..., X _m-1 ,
The intersection of the X _m, the light extraction portion 16 in which the upper clad layer with high refractive index is formed, for example, the linear light-emitting source Y ₂
Is guided to the photoconductor layer 3.

Each of the linear light sources Y ₁ , Y ₂ ,..., Y _n-1 , Y
Adjacent to the intersections between _n and the linear electrodes X ₁ , X ₂ ,..., X _m−1 , X _m , there are provided optical switching elements 3 each composed of a photoconductor layer. Linear electrodes _{X 1, X 2, ...,} X
_m-1, are formed on the same plane as the pixel electrode 4 for driving the liquid crystal is X _m and the display medium, the linear electrodes _{X 1, X 2, ...,} X m-1, X m The above-described optical switch elements 3 are provided between the pixel electrodes 4 respectively.

A transparent electrode 6 is provided on the other glass substrate 5b, and a liquid crystal layer 8 is sealed between the above-mentioned substrate and the sealant 7.

When the optical switch element 3 is irradiated with light, that is, when the linear light source Y ₂ emits light, the impedance of the optical switch element 3 decreases, and the signal from the linear electrode X ₁ is applied to the picture element electrode 4. Applied, thus changing the orientation of the liquid crystal.

The glass substrates 5a and 5b are one embodiment of the two substrates of the present invention. The optical switch element 3 is an embodiment of the photoconductor layer of the present invention. The picture element electrode 4 is an embodiment of the picture element electrode of the present invention. The liquid crystal layer 8 is an embodiment of the liquid crystal layer of the present invention. Linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n
Is an embodiment of a linear light source according to the present invention. The linear electrodes X ₁ , X ₂ ,..., X _m−1 , X _m are one embodiment of the linear electrodes of the present invention.

The linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n
Is scanned by sequentially emitting light from Y ₁ to Y _n , and in accordance with the scanning, electric signals are output in the form of linear electrodes X ₁ , X ₂ ,.
It applied to X _m-1, X _m. Linear light sources Y ₁ , Y ₂ ,.
Since the optical switch element is turned on by the light guided through Y _n-1 and Y _n and taken out, the linear electrodes X ₁ , X ₂ ,
..., electrical signals from the X _m-1, X m is applied to each of the picture element electrode 4. That is, the optical switch element 3 is scanned by optical signals from the linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n instead of the electrical gate signals of the TFT elements.

As described above, according to the above-described embodiment, since the scanning signal is light, there is no inconvenience that the scanning (gate) signal flows through the electric capacitance of the element as in the case of the TFT element. Further, the linear light emitting sources Y ₁ , Y ₂ ,.
can be induced efficiently to the optical switch unit light from _n-1, Y _n by the distribution of refractive index.

An optical addressing type driving type LC according to the embodiment will be described below.
A detailed method for creating D will be described.

The light guide path 2 is shown in FIG.
6 is formed as shown in FIG.

First, the light shielding layer 11 is formed on the surface of the glass substrate 5a.
Glass fiber Z (light shielding layer 11, clad 1
2, a core 13) and a glass plate 5c of the same quality as the glass substrate 5a are alternately arranged, and further fused by sandwiching the glass 5d. The glass 5d is removed by polishing to make the fiber portion a surface layer. Further, a part of the light shielding layer 11 and the clad 12 of the fiber on the substrate surface is polished and removed. At this time, the clad on the substrate surface is left so that light propagating in the light guide path does not leak to the surface (depending on the refractive index of the core and the clad, for example, 1 μm or more). Next, a light extraction portion 16 is formed on the fiber surface so as to diffuse ions to a high refractive index in accordance with the optical switch portion and to guide light propagating through the core to the photoconductor layer 3. First, silver (Ag) 17 is sputtered on the fiber surface for 10 nm to 500 n.
m, preferably 100 nm to 200 nm, and patterned in accordance with the optical switch section. Then 5
Under a voltage of 0 V, silver ions (Ag ⁺ ) are exchanged with sodium ions (Na ⁺ ) in the fiber, and when it is desired to further diffuse Ag ⁺ , heat is thermally diffused. For example, a film thickness of 20
0 nm Ag film is deposited, 220 ° C., electric field 30 V / mm
In this case, an ion exchange portion 16 having a thickness of 10 μm can be formed in about 20 minutes, and a high refractive index portion having a thickness of approximately 30 μm can be formed by performing Ag ⁺ thermal diffusion at 370 ° C. for 2 hours. Although Ag ⁺ is used as the ion to be exchanged here, Tl ⁺ may be used. A dry ion exchange method of first depositing an Ag film was used, but AgNO ₃ (melting point 208 ° C.), TlNO
₃ (melting point 230 ° C) using titanium (T
The metal such as i) may be patterned and used as a mask to perform field ion exchange in each molten salt. The electric field strength, time and temperature may be adjusted according to the desired diffusion thickness. Incidentally, the diameter of the fiber is set to 20 to 500 μm, preferably 5 to 500 μm, according to the size of the photoconductor.
Set to 0 to 100 μm. Also, the width of the glass 5c is set to 50 to 500 μm, preferably 2 to 500 μm according to the size of the picture element.
It is set to 00 to 300 μm.

Linear light sources Y ₁ , Y ₂ ,..., Y _n-1 , Y _n
Linear electrodes X _1, X _2, ..., the intersection of X _m-1, X _m,
That is, the photoconductor layer 3 is formed on the light extraction unit 15.
This photoconductor layer 3 is made of hydrogenated amorphous silicon (a
-Si: H) film by plasma enhanced chemical vapor deposition (P-CVD)
It is formed using a method and is patterned and formed by etching. As the photoconductor layer 3, a-S
In addition to i: H, hydrogenated amorphous silicon germanium (a-SiGe: H), hydrogenated amorphous silicon carbide (a-SiC: H), hydrogenated amorphous silicon oxide (a-SiO: H), hydrogenated amorphous silicon night Ride (a-SiN: H) or the like can be used in accordance with the wavelength of the light emitting source 1.

Thereafter, the linear electrodes X ₁ , X ₂ ,.
As X _m-1, X m, a metal such as Al prepared by EB vapor deposition, formed by patterning by etching. This linear electrode is made of Mo, C, in addition to Al.
metals such as r and Ti, and indium-tin oxide (ITO)
Or other transparent electrodes may be used.

On the other hand, the picture element electrode 4 is formed by depositing an ITO film by sputtering and patterning it by etching.

Here, the linear electrode X and the pixel electrode 4 are formed on the photoconductor layer 3, but the photoconductor layer 3 may be formed on the linear electrode X and the pixel electrode 4. Although the configuration of the linear electrode X, the photoconductor layer 3, and the pixel electrode 4 is a planar type, a sandwich structure may be used.

An alignment layer 9a is formed on these layers. The alignment layer 9a is formed by rubbing a polyimide film formed by a spinner. Alignment layer 9a
Is formed using a spinner here, but may be formed by a printing method.

The transparent electrode 6 is provided on the other glass substrate 5b. This transparent electrode 6 is formed by sputtering.
It is formed by depositing ITO.

On this transparent electrode 6, a light-shielding layer 10 is formed in accordance with the pattern of the optical switch element composed of the photoconductor layer 3 formed on the opposing substrate. This light-shielding layer 10
1 is formed by an EB vapor deposition method and is formed by etching. The light-shielding layer 10 may be made of Mo, C, in addition to Al.
Metals such as r and Ti, organic pigment-dispersed resins, and inorganic pigment-dispersed resins may be used. Further, here, it is formed on the transparent electrode 6, but it may be formed on the back surface of the glass substrate 5b.

Further, an alignment layer 9b is formed on these. This alignment layer 9b is formed by rubbing a polyimide film formed by a spinner. Alignment layer 9b
Is formed using a spinner here, but may be formed by a printing method.

The spacers 14 (not shown) are dispersed between the substrates on which the respective layers are formed as described above, and the substrates are bonded together via the sealant 7.

During this time, liquid crystal is injected to form a liquid crystal layer 8. The thickness of the liquid crystal layer 8 is about 5 μm, and the display mode is a normally white type of twisted nematic (TN). As a liquid crystal material, for example, PC manufactured by Merck
The H liquid crystal ZLI-1565 is used, and the liquid crystal layer 8 is formed by vacuum injection.

When the optical switch element 3 is irradiated with light, that is, when the linear light source Y ₂ emits light, the impedance of the optical switch element 3 is reduced and the signal from the linear electrode X ₁ is applied to the picture element electrode 4. Applied, thus changing the orientation of the liquid crystal.

Embodiment 2 FIG. 6 shows another embodiment relating to a method of forming a light guide path.

In the same manner as in the first embodiment, glass fibers Z1 (comprising the cladding 12 and the core 13) and glass plates 5c of the same quality as the glass substrate 5a are alternately arranged on the glass substrate 5a. A glass paste preform 15 (for example, manufactured by Nippon Electric Glass Co., Ltd.) is sandwiched between the substrates 5a, and glass 5d is placed thereon and fused. However, the glass paste 1 used at this time
5 is made according to the characteristics (thermal expansion coefficient, glass transition point, etc.) of the glass substrate 5a, the glass plate 5c, and the glass fiber Zl, that is, the glass transition point of the glass paste 15 is set to the glass substrate 5a, the glass plate 5c, the glass Fiber Zl
Slightly lower. Here, since the glass paste 15 is black, it also functions as a light shielding layer. The glass 5d is removed by polishing to make the fiber portion a surface layer. Further, a part of the cladding 12 of the fiber on the substrate surface is polished and removed. At this time, the clad on the substrate surface is left so that light propagating in the light guide path does not leak to the surface (depending on the refractive index of the core and the clad, for example, 1 μm or more). Next, ions are diffused to a high refractive index on the fiber surface in accordance with the optical switch section, and a light extraction section 16 for guiding light propagating through the core to the photoconductor layer 3 is formed. First, silver (Ag) is sputtered on the fiber surface to a thickness of 10 nm to 500 n.
m, preferably 100 nm to 200 nm, and patterned in accordance with the optical switch section. Then 5
Under a voltage of 0 V, silver ions (Ag ⁺ ) are exchanged with sodium ions (Na ⁺ ) in the fiber, and when it is desired to further diffuse Ag ⁺ , heat is thermally diffused. For example, a film thickness of 20
0 nm Ag film is deposited, 220 ° C., electric field 30 V / mm
About 20 minutes can ion exchange unit of 10μm thick, about 3 further performed thermal diffusion of 2 hours Ag ⁺ at 370 ° C. thickness when
A high refractive index portion of 0 μm can be formed. Although Ag ⁺ is used as the ion to be exchanged here, Tl ⁺ may be used. A dry ion exchange method of depositing an Ag film was used first, but AgNO ₃ (melting point 208 ° C.) and TlNO ₃ (melting point 2
A metal such as titanium (Ti) may be patterned in advance using a molten salt (30 ° C.), and field ion exchange may be performed in each molten salt using the mask as a mask. Electric field strength,
The time and temperature may be adjusted according to the desired diffusion thickness. The diameter of the fiber Zl is set to 20 to 500 μm, preferably 50 to 100 μm according to the size of the photoconductor, and the width of the glass paste 15 is also in accordance with the fiber diameter.
Also, the width of the glass 5c should be 50 to 5 depending on the size of the picture element.
The thickness is set to 00 μm, preferably 200 to 300 μm.

Embodiment 3 FIG. 7 shows another embodiment relating to a method of forming a light guide path.

A patterned resist is formed on the glass substrate 5a, a groove is dug by using a sand blast method, and a glass fiber Z (consisting of a light shielding layer 11, a clad 12, and a core 13) is fitted into the groove and fused. Although the cross-sectional shape of the groove is shown as a square in FIG. 7, it may be a semicircle or a V-shape. As a method of forming a groove in the glass substrate, there is a method using a blade in addition to the sand blast method shown in this embodiment in machining, and there is an etching method in chemical processing, but both mechanical processing and chemical processing are effective. Yes, it is preferable to perform chemical processing after mechanical processing. Further, at the time of fusing, the glass 5d may be placed on the top and fused as in the first embodiment.
Remove d. Further, a part of the light shielding layer 11 and the clad 12 of the fiber on the substrate surface is polished and removed. At this time, the clad on the substrate surface is left so that light propagating in the light guide path does not leak to the surface (depending on the refractive index of the core and the clad, for example, 1 μm or more). Next, ions are diffused to a high refractive index on the fiber surface in accordance with the optical switch section, and a light extraction section 16 for guiding light propagating through the core to the photoconductor layer 3 is formed. First, silver (Ag) is sputtered on the fiber surface to a thickness of 10 nm to 500 n.
m, preferably 100 nm to 200 nm, and patterned in accordance with the optical switch section. Then 5
Under a voltage of 0 V, silver ions (Ag ⁺ ) are exchanged with sodium ions (Na ⁺ ) in the fiber, and when it is desired to further diffuse Ag ⁺ , heat is thermally diffused. For example, a film thickness of 20
0 nm Ag film is deposited, 220 ° C., electric field 30 V / mm
In this case, an ion exchange portion having a thickness of 10 μm is formed in about 20 minutes, and when the heat diffusion of Ag ⁺ is performed at 370 ° C. for 2 hours, the thickness becomes about 3 μm.
A high refractive index portion of 0 μm can be formed. Although Ag ⁺ is used as the ion to be exchanged here, Tl ⁺ may be used. At first, a dry ion exchange method of depositing an Ag film was used, but a metal such as titanium (Ti) was previously patterned using a molten salt of AgNO ₃ (melting point 208 ° C.) and TlNO ₃ (melting point 230 ° C.). Then, field ion exchange may be performed in each molten salt using the mask as a mask. The electric field strength, time and temperature may be adjusted according to the desired diffusion thickness. The diameter of the fiber Z is set to 20 to 500 μm, preferably 50 to 100 μm according to the size of the photoconductor. The width of the glass 5c is also 50 to 500 μm, preferably 200 to 300 μm according to the size of the picture element.
Set to.

Embodiment 4 FIG. 8 shows another embodiment relating to a method of forming a light guide path.

After a patterned resist is formed on the glass substrate 5a, a groove is dug by using a sand blast method, and a glass paste preform 15 (for example, manufactured by Nippon Electric Glass Co., Ltd.) and a glass fiber Zl (cladding) are formed in the groove. 1
2, and the core 13). However, the glass paste 15 used at this time is the glass substrate 5
a, the glass plate 5c and the glass fiber Zl are prepared according to the characteristics (coefficient of thermal expansion, glass transition point, etc.), that is, the glass transition point of the glass paste 15 is slightly lower than that of the glass substrate 5a, the glass plate 5c and the glass fiber Zl. I do.
Here, since the glass paste 15 is black, it also functions as a light shielding layer. Although the cross-sectional shape of the groove is shown as a square in FIG. 8, it may be a semicircle or a V-shape. As a method of forming a groove in the glass substrate, there is a method using a blade in addition to the sand blast method shown in this embodiment in machining, and there is an etching method in chemical processing, but both mechanical processing and chemical processing are effective. Yes, it is preferable to perform chemical processing after mechanical processing. Further, at the time of fusion, the glass 5d may be placed on the top and fused as in Embodiment 2, but at this time, the glass 5d is removed by polishing after fusion. Further, a part of the cladding 12 of the fiber on the substrate surface is polished and removed. At this time, the clad on the substrate surface is left so that light propagating in the light guide path does not leak to the surface (depending on the refractive index of the core and the clad, for example, 1 μm or more). Next, ions are diffused to a high refractive index on the fiber surface in accordance with the optical switch section, and a light extraction section 16 for guiding light propagating through the core to the photoconductor layer 3 is formed. First, 10 n of silver (Ag) was sputtered on the fiber surface.
The film is formed to have a thickness of m to 500 nm, preferably 100 nm to 200 nm, and is patterned according to the optical switch portion. Thereafter, silver ions (Ag ⁺ ) and sodium ions (Na ⁺ ) in the fiber are exchanged under a voltage of 50 V, and when it is desired to further diffuse Ag ⁺ , it is heated and thermally diffused. For example by depositing an Ag film having a thickness of 200 nm, 220 ° C., an electric field 30 V / mm to about 20 minutes can ion exchange unit of 10μm thickness when about further performed thermal diffusion of 2 hours Ag ⁺ at 370 ° C. The thickness A high refractive index portion of 30 μm can be formed. Although Ag ⁺ is used as the ion to be exchanged here, Tl ⁺ may be used. A dry ion exchange method of first depositing an Ag film was used, but AgNO ₃ (melting point 208 ° C.), TlN
Using a molten salt of O ₃ (melting point 230 ° C.), titanium (T
The metal such as i) may be patterned and used as a mask to perform field ion exchange in each molten salt. The electric field strength, time and temperature may be adjusted according to the desired diffusion thickness. The diameter of the fiber is 20 to 500 μm, preferably 50 to 10 μm, according to the size of the photoconductor.
The thickness is set to 0 μm, and the width of the glass paste also conforms to the fiber diameter. Also, the width of the glass 5c should be 5 in accordance with the size of the picture element.
The thickness is set to 0 to 500 μm, preferably 200 to 300 μm.

Embodiment 5 FIG. 9 shows an embodiment of an optical switching liquid crystal display device in which a light guide path is formed on a counter substrate using a simple matrix driving method which is another driving method of the present invention. .
Here, the process of producing the liquid crystal display element in the present embodiment,
The conditions and materials are as described in Example 1.

FIG. 9 is a plan view showing a basic structure of a simple matrix drive type LCD which is an embodiment of the optical switching liquid crystal display device according to the present invention, and is a sectional view (a BB diagram shown in FIG. 9). ) Is the same as FIG.

In the plan view shown in FIG. 9, the glass substrate 5b, the liquid crystal layer 8, the spacer 14, and the seal 7 shown in the sectional view of FIG. 2 are omitted.

As shown in FIGS. 2 and 9, a plurality of linear light sources Y ₁ , Y ₂ ,.
Y _n-1 and Y _n are arranged along the Y direction, and a plurality of common linear electrodes C ₁ , C ₂ ,..., C _k-1,.
C _k are arranged along the Y direction. The linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n and the common linear electrodes C ₁ , C
₂ ,..., C _k−1 and C _k are arranged on the same plane.
At least two or more common linear electrodes (j) are formed between the linear light sources. Each linear light source Y ₁ , Y
_{2, ..., Y n-1} , Y n, for example, the linear light-emitting source Y ₂ are, LE
The light emitting unit 1 includes a light emitting unit 1 formed of a D array element or an LD array element, a linear light guide path 2 for transmitting light from the light emitting unit 1, and a light extraction unit 16. The light propagating through the linear light guide path 2 is radiated to the upper part of the substrate by the light extraction unit 16.

On the other substrate 5a, a plurality of linear electrodes X ₁ , X ₂ ,..., X _m−1 , X _m are formed on the substrate 5a and a plurality of linear light emitting sources Y ₁ , Y ₂ ,. , Y _n−1 , Y _n and the common linear electrodes C ₁ , C ₂ ,..., C _k−1 , C _k are arranged orthogonally, that is, along the X direction. The pixel electrodes are patterned in an island shape so as to be driven by one linear light emitting source and j common linear electrodes.

Each linear light source Y ₁ , Y ₂ ,..., Y _n-1 , Y
_n and linear electrodes _{X 1, X 2, ...,} X m- 1, the intersection of the X _m, i.e. the linear light-emitting source _{Y 1, Y 2, ...,} Y n-1, Y n
The optical switch elements 3 each composed of a photoconductor layer are provided on the light extraction portions 15 of the optical switch. Linear electrode X ₁ ,
X ₂ ,..., X _m−1 , X _m and the pixel electrode 4 for driving the liquid crystal as a display medium are formed on the same plane.
The above-described optical switch elements 3 are provided between the linear electrodes X ₁ , X ₂ ,..., X _m−1 , X _m and the pixel electrodes 4, respectively.

A liquid crystal layer 8 is sealed between the two substrates and the sealant 7 described above.

When the optical switch element 3 is irradiated with light, that is, when the linear light source Y ₂ emits light, the impedance of the optical switch element 3 is reduced, and the signal from the linear electrode X ₁ is applied to the picture element electrode 4. Applied, thus changing the orientation of the liquid crystal.

The linear light sources Y ₁ , Y ₂ ,..., Y _n−1 , Y _n
Is scanned by sequentially emitting light from Y ₁ to Y _n , and in accordance with the scanning, electric signals are output in the form of linear electrodes X ₁ , X ₂ ,.
It applied to X _m-1, X _m. Linear light sources Y ₁ , Y ₂ ,.
During the period when Y _n−1 and Y _n are emitting light, the optical switch element on the linear light source is in the ON state, so that the linear electrodes X ₁ ,
Electric signals from X ₂ ,..., X _m−1 , X _m are applied to the respective pixel electrodes 4. In other words, a display area composed of j common linear electrodes is defined as one unit block, and each block is selected by a linear light source. As a result, a scanning line of (j × m) can be driven with a duty ratio (1 / j).

As described above, according to the above-described embodiment, a high-contrast and large-capacity display can be performed with a minimum necessary number of drivers as compared with a conventional simple matrix drive type liquid crystal display device.

[0059]

According to the present invention, since the patterning of the light extraction portion can be performed with high accuracy based on the above-described structure, and the deterioration in the heating and cooling during the subsequent process is suppressed, the light guide path is improved. Thus, the light propagation characteristics are guaranteed, and light is incident on the optical switch section with high accuracy and high efficiency. As a result, a large capacity and high resolution liquid crystal display device can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view of an optical scanning type active matrix drive type liquid crystal display device of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a principle diagram of a configuration of a light guide path and a light extraction method in FIG. 2;

FIG. 4 is a diagram showing a process of forming a light guide path of the optical scanning type LCD of the present invention.

FIG. 5 is a view showing a process of an ion exchange method which is a light extraction method of the optical scanning type LCD of the present invention.

FIG. 6 is a diagram showing another process of forming a light guide path of the optical scanning type LCD of the present invention.

FIG. 7 is a view showing another process of forming a light guide path of the optical scanning type LCD of the present invention.

FIG. 8 is a diagram showing another process for forming a light guide path of the optical scanning type LCD of the present invention.

FIG. 9 is a plan view showing a basic structure of a simple matrix drive type liquid crystal display device of the present invention.

[Explanation of symbols]

_{X 1, X 2, ...,} X m-1, X m linear electrodes _{Y 1, Y 2, ...,} Y n-1, Y n linear light-emitting source Z, Zl optical fiber C _1, C _2, ..., C _k-1 , C _k common electrode 1 Light emitting source 2 Light guide 3 Photoconductor 4 Pixel electrode 5a, 5b Substrate 8 Liquid crystal layer 9a, 9b Alignment layer 10 Light shielding layer 11 Light shielding layer 12 Cladding part 13 Core part 16 Light extraction Department

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-5-11268 (JP, A) JP-A-1-173016 (JP, A) JP-A-2-89029 (JP, A) JP-A-4- 175730 (JP, A) Fully open 1987-43330 (JP, U) (58) Fields investigated (Int. Cl. ⁶ , DB name) G02F 1/135 G02F 1/136 G02F 1/1343 G02F 1/13 101 G09F 9/30

Claims (2)

(57) [Claims] 1. A liquid crystal display device including a liquid crystal layer provided between two substrates each having an electrode, wherein the substrates are arranged in parallel with each other, and a plurality of linear light guide paths; A plurality of linear electrodes arranged in parallel with each other in a direction intersecting the linear light guide, and the plurality of linear electrodes adjacent to a position where the plurality of linear light guides and the plurality of linear electrodes intersect; A plurality of picture element electrodes formed on the same substrate; and a plurality of picture element electrodes provided between the plurality of picture element electrodes and the plurality of linear electrodes, each of which performs a switching operation by light from the plurality of linear light guide paths. of which a photoconductive layer, an optical scanning of each picture element of the liquid crystal layer is configured to be driven by a signal applied through the linear electrode and the photoconductive layer
In the liquid crystal display device, the linear light guide has a different refractive index.
Optical fiber having a core layer and a cladding layer
As well as the cladding layer is exposed on the substrate surface
Buried as described above and exposed on the substrate surface
A field corresponding to the photoconductor layer of the cladding layer of the linear light guide path
A light extraction portion composed of a high refractive index portion formed by using an ion exchange method is formed at the place, and a core of the linear light guide is formed.
Light propagating through the light-emitting layer,
An optical scanning type liquid crystal display element, which is guided to a photoconductor layer . 2. Between two substrates each having an electrode.
A liquid crystal display device including a provided liquid crystal layer, wherein the substrate
A plurality of linear light guide paths arranged in parallel with each other;
Are arranged in parallel with each other in a direction crossing the linear light guide
A plurality of linear electrodes, the plurality of linear light guide paths and the plurality
Adjacent to the position where the plurality of linear electrodes intersect.
A plurality of picture element electrodes formed on the same substrate as the poles;
A plurality of pixel electrodes are respectively provided between the plurality of linear electrodes.
And is switched by light from the plurality of linear light guides.
A plurality of photoconductor layers operating in a linear manner.
By the signal applied through the electrode and the photoconductor layer
Optical scanning type configured to drive each picture element of the liquid crystal layer
In a method for manufacturing a liquid crystal display element, a core having a different refractive index is used.
An optical fiber having a layer and a cladding layer in the substrate.
A step of embedding by fusion, and then polishing the substrate surface.
Polishing to expose the cladding layer on the substrate surface
And forming the linear light guide path on the surface of the substrate.
The photoconductor of the cladding layer of the exposed linear light guide path
In the area corresponding to the layer , use the ion exchange method to
Characterized by forming a light extraction part made of
Method for manufacturing a double-type liquid crystal display device.