JP2940699B2 - Method for forming p-type SiC electrode - Google Patents
Method for forming p-type SiC electrodeInfo
- Publication number
- JP2940699B2 JP2940699B2 JP2202030A JP20203090A JP2940699B2 JP 2940699 B2 JP2940699 B2 JP 2940699B2 JP 2202030 A JP2202030 A JP 2202030A JP 20203090 A JP20203090 A JP 20203090A JP 2940699 B2 JP2940699 B2 JP 2940699B2
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- film
- type sic
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- 238000000034 method Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 44
- 229910010271 silicon carbide Inorganic materials 0.000 description 43
- 238000010438 heat treatment Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 206010003830 Automatism Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、ｐ型SiC上にオートミック性の電極を形成
する方法に関する。The present invention relates to a method of forming an electrode having automatism on p-type SiC.
（ロ）従来の技術 炭化ケイ素（SiC）は高温高圧下で動作可能な半導体
材料として注目されており、また光学的バンドキャップ
が広く、且つ容易にpn接合が形成できることから青色発
光素子材料として期待されている。(B) Conventional technology Silicon carbide (SiC) is attracting attention as a semiconductor material that can operate under high temperature and high pressure, and is expected as a blue light emitting device material because of its wide optical band cap and easy formation of a pn junction. Have been.
斯るSiC半導体素子のｐ側電極として、例えば、雑誌
「月刊 Semiconductor World 1986.11」40〜48頁、1987
年秋季応用物理学会予稿集,29a−Ｗ−1,586頁等に記載
されている如く、ｐ型SiC上にSi、Alをこの順に積層形
成したAl/Si電極が用いられている。As the p-side electrode of such a SiC semiconductor element, for example, a magazine "Monthly Semiconductor World 1986.11", pp. 40-48, 1987
Al / Si electrodes in which Si and Al are stacked in this order on p-type SiC are used, as described in the Proceedings of the Japan Society of Applied Physics Fall, pp. 29a-W-1, page 586.
斯るAl/Si電極は、ｐ型SiC上にSi、Alをこの順に積層
した後、これらを900〜1000℃の高温で５分程度熱処理
を施すことによって、上記ｐ型SiCとオートミック接触
する。Such an Al / Si electrode, after laminating Si and Al in this order on p-type SiC, performs heat treatment at a high temperature of 900 to 1000 ° C. for about 5 minutes, thereby making an automatic contact with the p-type SiC. .
しかし乍ら、斯るAl/Si電極の形成においては、Al
膜、Si膜の積層前のｐ型SiC上に自然酸化膜が存在し、
この自然酸化膜の存在によって、電極とｐ型SiCとの間
でオートミック性のむらが生じ、さらに自然酸化膜のス
ルーホール部分で電極とSiCとの激しい反応が起こり、S
iC界面が荒れ、その結晶性が低下するといった問題が生
じる。斯る電極のオートミック性のむらや結晶性の低下
は、例えば発光ダイオードに用いたとき、光学特性の経
時変化の原因となる。However, in the formation of such an Al / Si electrode, Al
Natural oxide film exists on p-type SiC before laminating film and Si film,
Due to the presence of the natural oxide film, non-uniformity of automicity occurs between the electrode and the p-type SiC, and a vigorous reaction between the electrode and the SiC occurs in a through-hole portion of the natural oxide film, and S
There is a problem that the iC interface is roughened and its crystallinity is reduced. Such non-uniform automic properties and reduced crystallinity of the electrodes, for example, when used in light-emitting diodes, cause changes in optical characteristics over time.
そこで、本出願人は、特開平１−268121号公報におい
て、ｐ型SiCとAl/Si電極の間に酸素と強く反応する金
属、例えばTi膜を介在させることによって、後の熱処理
の際に斯るTi膜でｐ型SiC上の自然酸化膜を還元してこ
れを除去し、ｐ型SiCとAl/Si電極とで均一な反応をさ
せ、均一なオーミック性を得ることを提案した。In view of this, the present applicant disclosed in Japanese Patent Application Laid-Open No. 1-268121 that a metal that strongly reacts with oxygen, for example, a Ti film is interposed between the p-type SiC and the Al / Si electrode, so It has been proposed that a native oxide film on p-type SiC is reduced and removed with a Ti film, and a uniform reaction between the p-type SiC and the Al / Si electrode is obtained to obtain a uniform ohmic property.
（ハ）発明が解決しようとする課題 然るに、SiCとAl/Si電極との間にTi膜を介在させた場
合においても、一般的にｐ型SiCと電極との接触抵抗が
高く、ｐ型SiCの不純物濃度が１×1017cm-3以下のと
き、オーミック性が得られにくくなるといった問題が生
じる。(C) Problems to be Solved by the Invention Even when a Ti film is interposed between SiC and an Al / Si electrode, the contact resistance between the p-type SiC and the electrode is generally high, and the p-type SiC When the impurity concentration is 1 × 10 17 cm −3 or less, there is a problem that it becomes difficult to obtain ohmic properties.
従って、本発明は、ｐ型SiCと電極との接触抵抗を低
くでき、且つ電極内で均一なオーミック性を得ることを
技術的課題とする。Accordingly, it is a technical object of the present invention to reduce the contact resistance between p-type SiC and an electrode and to obtain uniform ohmic properties within the electrode.
（ニ）課題を解決するための手段 本発明は、ｐ型SiC上にオーミック性の電極を形成す
る方法にあって、上記課題を解決するため、上記ｐ型Si
Cの上に、Ni膜、Ti膜を任意の順序で積層形成し、この
上にAl膜を積層形成した後、これらの金属膜を上記ｐ型
SiCと共に熱処理することを特徴とする。(D) Means for Solving the Problems The present invention relates to a method for forming an ohmic electrode on p-type SiC.
A Ni film and a Ti film are formed in any order on C, and an Al film is formed on the Ni film and the Ti film.
It is characterized by heat treatment with SiC.
（ホ）作用 本発明によれば、ｐ型SiCの上に形成されるNi膜が、
熱処理の際にSiC及びAlのオーミック接触を促進させ
る。(E) Function According to the present invention, the Ni film formed on the p-type SiC is:
Promotes ohmic contact between SiC and Al during heat treatment.
（ヘ）実施例 本発明方法をSiC発光ダイオードに用いる場合の一実
施例を第１図を参照して説明する。(F) Embodiment An embodiment in which the method of the present invention is applied to a SiC light emitting diode will be described with reference to FIG.
第１図（ａ）は第１の工程を示し、ｎ型SiC基板
（１）の一主面（1a）上に周知のLPE法を用いて、ｎ型S
iC層（２）、ｐ型SiC層（３）を順次エピタキシャル成
長させる。FIG. 1 (a) shows a first step, in which n-type SiC is formed on one main surface (1a) of an n-type SiC substrate (1) using a well-known LPE method.
An iC layer (2) and a p-type SiC layer (3) are sequentially epitaxially grown.
第１図（ｂ）は第２の工程を示し、ｐ型SiC層（３）
上に電子ビーム蒸着法を用いて、Ni膜（４）、Ti膜
（５）、Al膜（６）を夫々0.2μｍ、0.02μｍ、0.5μｍ
の厚さで順次蒸着し、ｐ側電極（７）を形成する。FIG. 1 (b) shows a second step, in which a p-type SiC layer (3) is used.
The Ni film (4), Ti film (5), and Al film (6) were formed on top of each other by using an electron beam evaporation method at 0.2 μm, 0.02 μm, and 0.5 μm, respectively.
To form a p-side electrode (7).
第１図（ｃ）は第３の工程を示し、ｎ型SiC基板
（１）の他主面（1b）上に電子ビーム蒸着法を用いて、
Ni膜（８）、Au膜（９）を夫々0.4μｍ、1.0μｍの厚さ
で順次蒸着し、ｎ側電極（10）を形成する。FIG. 1 (c) shows a third step, on the other main surface (1b) of the n-type SiC substrate (1), using an electron beam evaporation method.
An Ni film (8) and an Au film (9) are sequentially deposited to a thickness of 0.4 μm and 1.0 μm, respectively, to form an n-side electrode (10).
しかる後、この積層体を900〜1000℃の不活性ガス、
例えば950℃のアルゴンガス中で５〜10分熱処理を施す
ことによって、電極（７）（10）は夫々接触するSiCと
の間でオーミック性を得る。Thereafter, the laminated body is heated at 900 to 1000 ° C. with an inert gas,
For example, by performing a heat treatment for 5 to 10 minutes in an argon gas at 950 [deg.] C., the electrodes (7) and (10) obtain ohmic properties with the SiC that is in contact with each of them.
また、以上のようにして得られる発光ダイオードにお
いて、第２図に示すように、ｐ側電極（７）上さらに電
子ビーム蒸着法を用いて、Ti膜（11）、Pt膜（12）、Au
膜（13）を夫々0.1μｍ、0.2μｍ、1.0μｍの厚さで順
次蒸着し、400℃のアルゴンガス中で熱処理を施すこと
によって、ワイヤボンディング等に用いるパット電極
（14）を形成してもよい。In the light emitting diode obtained as described above, as shown in FIG. 2, a Ti film (11), a Pt film (12), and an Au film are further formed on the p-side electrode (7) by using an electron beam evaporation method.
It is also possible to form a pad electrode (14) used for wire bonding or the like by sequentially depositing the film (13) to a thickness of 0.1 μm, 0.2 μm, and 1.0 μm, and performing a heat treatment in an argon gas at 400 ° C. Good.
斯る実施例において得られるSiC発光ダイオードで
は、ｐ型SiC層（３）の不純物濃度が５×1016cm-3のと
きのｐ型SiC層（３）とｐ側電極（７）との接触抵抗が
１〜５×10-5Ω・cm2となる。In the SiC light emitting diode obtained in such an embodiment, when the impurity concentration of the p-type SiC layer (3) is 5 × 10 16 cm −3 , the contact between the p-type SiC layer (3) and the p-side electrode (7) The resistance becomes 1 to 5 × 10 −5 Ω · cm 2 .
これに対して、ｐ側電極をAl/Si電極、あるいは斯るA
l/Si電極とｐ型SiC層との間にTi膜を介在させたものと
した従来のSiC発光ダイオードでは、ｐ型SiC層の不純物
濃度が５×1016cm-3のときのｐ型SiC層とｐ側電極との
接触抵抗がいずれも１×10-4Ω・cm2程度である。即
ち、本実施例では従来例よりも接触抵抗の小さい、電気
的特性に優れた発光ダイオードが得られている。In contrast, the p-side electrode is an Al / Si electrode,
In a conventional SiC light emitting diode in which a Ti film is interposed between an l / Si electrode and a p-type SiC layer, p-type SiC when the impurity concentration of the p-type SiC layer is 5 × 10 16 cm −3 The contact resistance between the layer and the p-side electrode is about 1 × 10 −4 Ω · cm 2 . That is, in this embodiment, a light emitting diode having a smaller contact resistance than the conventional example and having excellent electrical characteristics is obtained.
これは、以下に示す理由によるものと考えられる。即
ち、本発明方法で用いられるｐ側電極（７）内のNiは、
Ti、Alに比して拡散速度が大きいため、熱処理の際にｐ
型SiC層（３）内に容易に拡散していき、SiCのＣと結合
する。一方、NiとＣとの反応によりＣと分離したSiは、
Niに代わりｐ側電極（７）内に拡散していき、Alと反応
してアルミシリサイドを形成し、オーミック接触をな
す。即ち、本発明において、ｐ側電極（７）内のNiは、
ｐ型SiC層（３）中のSiをｐ側電極（７）中に拡散させ
易くする作用をなすものである。そしてその結果、オー
ミック接触が増え、より良好なオーミック性が得られる
ものである。従って、本発明においては、ｐ型SiC層
（３）の不純物濃度が低い場合、即ち１×1017cm-3以下
の時のみ効果があるものではなく、１×1017cm-3以上に
おいても従来より良好なオーミック接触が得られるもの
である。This is considered to be due to the following reason. That is, Ni in the p-side electrode (7) used in the method of the present invention is:
Since the diffusion rate is higher than that of Ti and Al, p
It easily diffuses into the mold SiC layer (3) and combines with C of SiC. On the other hand, Si separated from C by the reaction between Ni and C is
Instead of Ni, it diffuses into the p-side electrode (7), reacts with Al to form aluminum silicide, and makes ohmic contact. That is, in the present invention, Ni in the p-side electrode (7)
This serves to facilitate the diffusion of Si in the p-type SiC layer (3) into the p-side electrode (7). As a result, the number of ohmic contacts increases, and better ohmic properties can be obtained. Accordingly, in the present invention, when the impurity concentration of the p-type SiC layer (3) is low, i.e., 1 × 10 17 cm -3 and not that there is only effective when the following, in 1 × 10 17 cm -3 or more A better ohmic contact than before can be obtained.
また、本実施例において、Ti膜（５）は、熱処理の際
にｐ型SiC層（３）とｐ側電極（７）との界面に存在す
るCO,SiO2等の酸化物を還元し、ｐ型SiC層（３）とｐ側
電極（７）とを均一に反応させる作用をなすものであ
る。In the present embodiment, the Ti film (5) reduces oxides such as CO and SiO 2 existing at the interface between the p-type SiC layer (3) and the p-side electrode (7) during the heat treatment. This serves to uniformly react the p-type SiC layer (3) with the p-side electrode (7).
以上、本実施例においてはｐ側電極（７）を、ｐ型Si
C層（３）上に、Ni膜（４）、Ti膜（５）、Al膜（６）
の順に積層して形成したが、Ti膜（５）、Ni膜（４）、
Al膜（６）の順に積層しても、同様の効果が得られる。
また、本発明はSiC発光ダイオードに限ることなく、SiC
を用いたバイポーラトランジスタ、FET等他の半導体素
子にも適用できることは言うまでもない。As described above, in this embodiment, the p-side electrode (7) is
Ni film (4), Ti film (5), Al film (6) on C layer (3)
The layers were formed in the following order: Ti film (5), Ni film (4),
The same effect can be obtained by laminating in the order of the Al film (6).
Also, the present invention is not limited to SiC light emitting diodes,
It is needless to say that the present invention can be applied to other semiconductor elements such as a bipolar transistor and an FET using the same.
（ト）発明の効果 本発明方法によれば、ｐ型SiC上に、Ni膜、Ti膜を積
層形成し、この上にAl膜を積層形成した後、これらの膜
を熱処理することによって、ｐ型SiCの上に形成されたN
i膜が、熱処理の際にSiC中のSiの電極内における拡散を
促進させるので、AlとSiによるオーミック接触が増え、
素子の電気的特性が改善される。(G) Effects of the Invention According to the method of the present invention, a Ni film and a Ti film are formed on p-type SiC, and an Al film is formed on the Ni film and Ti film. N formed on type SiC
Since the i-film promotes the diffusion of Si in SiC within the electrode during heat treatment, the ohmic contact between Al and Si increases,
The electrical characteristics of the device are improved.
第１図は本発明方法の一実施例を説明するための工程別
断面図、第２図は本実施例装置のｐ側電極上にパット電
極を設けた例を示す断面図である。FIG. 1 is a cross-sectional view for explaining one embodiment of the method of the present invention, and FIG. 2 is a cross-sectional view showing an example in which a pad electrode is provided on a p-side electrode of the apparatus of this embodiment.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 隆夫 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 平１−268121（ＪＰ，Ａ) 特開 昭62−71271（ＪＰ，Ａ) 特開 平３−97275（ＪＰ，Ａ) 特開 昭59−214224（ＪＰ，Ａ) 特開 昭50−57784（ＪＰ，Ａ) 特開 昭58−138027（ＪＰ，Ａ) 特開 昭60−136223（ＪＰ，Ａ) 特開 昭64−20616（ＪＰ，Ａ) 特公 昭45−14010（ＪＰ，Ｂ１) 特公 昭44−17302（ＪＰ，Ｂ１) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 33/00 H01L 21/28 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Takao Yamaguchi 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-1-268121 (JP, A) JP-A Sho JP-A-3-97275 (JP, A) JP-A-59-214224 (JP, A) JP-A-50-57784 (JP, A) JP-A-58-138027 (JP, A) A) JP-A-60-136223 (JP, A) JP-A-64-20616 (JP, A) JP-B-45-14010 (JP, B1) JP-B-44-17302 (JP, B1) (58) Survey Field (Int.Cl. 6 , DB name) H01L 33/00 H01L 21/28
Claims (1)
る方法において、上記ｐ型SiCの上に、Ni膜、Ti膜を任
意の順序で積層形成し、この上にAl膜を積層形成した
後、これらの金属膜を上記ｐ型SiCと共に熱処理するこ
とを特徴とするｐ型SiCの電極形成方法。In a method of forming an ohmic electrode on p-type SiC, a Ni film and a Ti film are laminated on the p-type SiC in an arbitrary order, and an Al film is laminated on the Ni film and the Ti film. And then heat-treating these metal films together with the p-type SiC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202030A JP2940699B2 (en) | 1990-07-30 | 1990-07-30 | Method for forming p-type SiC electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202030A JP2940699B2 (en) | 1990-07-30 | 1990-07-30 | Method for forming p-type SiC electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0485972A JPH0485972A (en) | 1992-03-18 |
| JP2940699B2 true JP2940699B2 (en) | 1999-08-25 |
Family
ID=16450764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2202030A Expired - Fee Related JP2940699B2 (en) | 1990-07-30 | 1990-07-30 | Method for forming p-type SiC electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2940699B2 (en) |
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| CN107993926A (en) * | 2017-12-01 | 2018-05-04 | 西安电子科技大学 | The preparation method of carborundum Ohmic contact |
| CN108550523A (en) * | 2018-03-23 | 2018-09-18 | 西安理工大学 | A method of preparing silicon carbide Ohmic electrode with photoresist |
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|---|---|---|---|---|
| JP2000114302A (en) * | 1998-10-08 | 2000-04-21 | Fuji Electric Co Ltd | Semiconductor device |
| JP4026339B2 (en) * | 2001-09-06 | 2007-12-26 | 豊田合成株式会社 | SiC electrode and manufacturing method thereof |
| JP4036075B2 (en) * | 2002-10-29 | 2008-01-23 | 豊田合成株式会社 | Method for manufacturing electrode for p-type SiC |
| JP4501488B2 (en) * | 2004-03-26 | 2010-07-14 | 豊田合成株式会社 | Silicon carbide semiconductor ohmic electrode and method of manufacturing the same |
| JP5286677B2 (en) * | 2007-03-13 | 2013-09-11 | トヨタ自動車株式会社 | Method for forming ohmic electrode on P-type 4H-SiC substrate |
| JP4935741B2 (en) | 2008-04-02 | 2012-05-23 | 三菱電機株式会社 | Method for manufacturing silicon carbide semiconductor device |
| JP5401356B2 (en) * | 2010-02-09 | 2014-01-29 | 昭和電工株式会社 | Manufacturing method of semiconductor device |
| JP6206159B2 (en) * | 2013-12-17 | 2017-10-04 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| CN109994376B (en) * | 2017-12-30 | 2021-10-15 | 无锡华润微电子有限公司 | Ohmic contact structure formed on silicon carbide substrate and forming method thereof |
-
1990
- 1990-07-30 JP JP2202030A patent/JP2940699B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2009013886A1 (en) * | 2007-07-20 | 2009-01-29 | Panasonic Corporation | Silicon carbide semiconductor device and method for manufacturing the same |
| US7829374B2 (en) | 2007-07-20 | 2010-11-09 | Panasonic Corporation | Silicon carbide semiconductor device and method for manufacturing the same |
| CN102187464A (en) * | 2008-10-23 | 2011-09-14 | 本田技研工业株式会社 | Electrode, semiconductor device, and method for manufacturing the semiconductor device |
| CN102187464B (en) * | 2008-10-23 | 2014-04-16 | 本田技研工业株式会社 | Electrode, semiconductor device, and method for manufacturing the semiconductor device |
| CN107993926A (en) * | 2017-12-01 | 2018-05-04 | 西安电子科技大学 | The preparation method of carborundum Ohmic contact |
| CN108550523A (en) * | 2018-03-23 | 2018-09-18 | 西安理工大学 | A method of preparing silicon carbide Ohmic electrode with photoresist |
| CN108550523B (en) * | 2018-03-23 | 2020-10-27 | 西安理工大学 | Method for preparing silicon carbide ohmic electrode by using photoresist |
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|---|---|
| JPH0485972A (en) | 1992-03-18 |
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