JP2936642B2 - Control method of high-speed semiconductor switch circuit - Google Patents

Control method of high-speed semiconductor switch circuit

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Publication number
JP2936642B2
JP2936642B2 JP2108158A JP10815890A JP2936642B2 JP 2936642 B2 JP2936642 B2 JP 2936642B2 JP 2108158 A JP2108158 A JP 2108158A JP 10815890 A JP10815890 A JP 10815890A JP 2936642 B2 JP2936642 B2 JP 2936642B2
Authority
JP
Japan
Prior art keywords
semiconductor switch
power supply
time
circuit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2108158A
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Japanese (ja)
Other versions
JPH048136A (en
Inventor
正明 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Original Assignee
Meidensha Corp
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Filing date
Publication date
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Priority to JP2108158A priority Critical patent/JP2936642B2/en
Publication of JPH048136A publication Critical patent/JPH048136A/en
Application granted granted Critical
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Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 A.産業上の利用分野 本発明は、常時第1の電源から複数の分岐負荷へ給電
を行い、短絡発生時は給電を第2の電源側へ高速度で切
換える高速半導体スイッチ回路の制御方法に関する。
DETAILED DESCRIPTION OF THE INVENTION A. Industrial Field of the Invention The present invention always supplies power from a first power supply to a plurality of branch loads, and switches the power supply to a second power supply at high speed when a short circuit occurs. The present invention relates to a method for controlling a semiconductor switch circuit.

B.発明の概要 本発明は、短絡容量の小さい第1の電源から第1の半
導体スイッチを介して常時複数の分岐負荷へ給電を行
い、短絡発生時は短絡容量の大きい第2の電源から第2
の半導体スイッチを介して短絡発生側負荷へ電流を流す
高速半導体スイッチ回路の制御方法において、 短絡事故等による過電流を検出したときは、第1の半
導体スイッチへ直ちにオフ制御信号を供給するととも
に、第2の半導体スイッチへのオン制御信号を、第1の
半導体スイッチのオフ時間と第2の半導体スイッチのオ
ン時間との差分だけ遅らせて供給することにより、 前記スイッチの切換え時に、第1の電源と第2の電源
が並列接続状態となって横流が発生することを防止し、
短絡容量の小さい第1の電源側に設けられる第1の半導
体スイッチの耐量を必要以上に上げることがないように
したものである。
B. Summary of the Invention The present invention always supplies power to a plurality of branch loads from a first power supply having a small short-circuit capacity via a first semiconductor switch. 2
In the control method of the high-speed semiconductor switch circuit for flowing a current to the load on the short-circuit occurrence side via the semiconductor switch, when an overcurrent due to a short-circuit accident or the like is detected, an off-control signal is immediately supplied to the first semiconductor switch; By supplying an ON control signal to the second semiconductor switch with a delay of a difference between the OFF time of the first semiconductor switch and the ON time of the second semiconductor switch, the first power supply is switched when the switch is switched. And the second power supply are connected in parallel to prevent a cross current from occurring,
The first semiconductor switch provided on the first power supply side having a small short-circuit capacity does not increase the withstand capability more than necessary.

C.従来の技術 従来、無停電電源装置等の短絡容量の小さな電源から
多数の負荷へ給電を行うシステムは例えば第2図のよう
に構成されている。第2図において無停電電源装置1と
複数の負荷2a,2b,2cを結ぶ分岐電路には電磁接触器3a,3
b,3cが各々介挿されている。この給電システムにおい
て、一部の負荷、例えば負荷2cで短絡事故が発生する
と、短絡電流によって無停電電源装置1が停止したり、
又は電磁接触器3cがトリップするまでの時間、電源電圧
が低下し他の負荷2a,2bに悪影響が及ぶ。このような不
都合を解消するために例えば第3図のような回路構成に
よって電源を切換えることがなされている。すなわち無
停電電源装置1と同期し且つ短絡容量の大きい第2の電
源4を設け、無停電電源装置1と電磁接触器3a,3b,3cを
結ぶ電路に第1高速半導体スイッチ5a,5b,5cを各々介挿
し、第2の電源4と電磁接触器3a,3b,3cを結ぶ電路に第
2高速半導体スイッチ6a,6b,6cを各々介挿している。第
3図において常時は第2高速半導体スイッチ6a,6b,6cを
オフ、第1高速半導体スイッチ5a,5b,5cをオンにし、該
スイッチ5a,5b,5cを介して無停電電源装置1から各負荷
2a,2b,2cへ給電を行う。また一部の負荷、例えば負荷2c
で第4図に示すように短絡が発生した場合は、図示しな
い電流検出手段によって過電流を検出した時点(時刻
t1)で第1高速半導体スイッチ5cをオフ制御すると同時
に第2高速半導体スイッチ6cをオン制御する。すると無
停電電源装置1に代わって第2の電源4から負荷2c側の
短絡事故点へ電流が流れる。このため電磁接触器3cがト
リップして負荷2cのみが切離される。このような電源切
換動作は他の負荷2a,2b側で短絡が発生しても同様に行
われる。したがって無停電電源装置1には短絡による過
大な電流が流れることはなく、前述のような電源停止や
電源電圧の低下等は発生しない。
C. Prior Art Conventionally, a system for supplying power from a power supply having a short circuit capacity such as an uninterruptible power supply to a large number of loads is configured as shown in FIG. 2, for example. In FIG. 2, electromagnetic contactors 3a, 3 are connected to a branch circuit connecting the uninterruptible power supply 1 and a plurality of loads 2a, 2b, 2c.
b and 3c are interposed respectively. In this power supply system, when a short circuit accident occurs in some loads, for example, the load 2c, the uninterruptible power supply 1 stops due to the short circuit current,
Alternatively, the power supply voltage is reduced until the electromagnetic contactor 3c trips, which adversely affects the other loads 2a and 2b. In order to solve such inconvenience, the power supply is switched by a circuit configuration as shown in FIG. 3, for example. That is, a second power supply 4 having a large short-circuit capacity synchronized with the uninterruptible power supply 1 is provided, and the first high-speed semiconductor switches 5a, 5b, 5c are connected to the electric circuit connecting the uninterruptible power supply 1 and the electromagnetic contactors 3a, 3b, 3c. , Respectively, and second high-speed semiconductor switches 6a, 6b, 6c are respectively inserted in the electric paths connecting the second power supply 4 and the electromagnetic contactors 3a, 3b, 3c. In FIG. 3, the second high-speed semiconductor switches 6a, 6b, and 6c are normally turned off, the first high-speed semiconductor switches 5a, 5b, and 5c are turned on. load
Power is supplied to 2a, 2b, 2c. Also some loads, for example load 2c
In the case where a short circuit occurs as shown in FIG.
t 1) in the OFF control of the first high-speed semiconductor switch 5c is turned on controlling the second high-speed semiconductor switch 6c simultaneously. Then, a current flows from the second power supply 4 to the short-circuit fault point on the load 2c side in place of the uninterruptible power supply device 1. Therefore, the electromagnetic contactor 3c trips and only the load 2c is disconnected. Such a power supply switching operation is similarly performed even if a short circuit occurs on the other loads 2a and 2b. Therefore, an excessive current does not flow through the uninterruptible power supply 1 due to the short circuit, and the above-described stop of the power supply and a decrease in the power supply voltage do not occur.

D.発明が解決しようとする課題 しかし第3図の回路では、使用する半導体スイッチ
(5a〜5c、6a〜6c)に以下の問題が生じる。第1高速半
導体スイッチ5a〜5cは遮断機能が必要であるためゲート
ターンオフサイリスタ等が使用されることが多く、高価
であるため耐量をむやみに上げられない。また第2高速
半導体スイッチ6a〜6cは耐量が必要であるため例えばサ
イリスタが使用される。このため過電流検出時に第5図
の時刻t1に示すように第1高速半導体スイッチ5cのオフ
制御信号と第2高速半導体スイッチ6cのオン制御信号を
同時に供給すると、前記スイッチ5cのオフタイム(ター
ンオフに要する時間)の方が長いため、前記スイッチ6c
がオンした時刻t2から前記スイッチ5cのオフ完了時刻t3
までの時間でスイッチ5c,6cが両方オン状態になってし
まう。このため無停電電源装置1と第2の電源4の間で
横流(第5図の斜線部分)が発生してしまう。これによ
って第1高速半導体スイッチ5c(例えばゲートターンオ
フサイリスタ)の責務が大きくなり、高価なゲートター
ンオフサイリスの耐量を必要以上に上げなくてはならず
経済的に非常に不利である。
D. Problems to be Solved by the Invention However, in the circuit of FIG. 3, the following problems occur in the semiconductor switches (5a to 5c, 6a to 6c) used. Since the first high-speed semiconductor switches 5a to 5c require a shut-off function, a gate turn-off thyristor or the like is often used, and the high-speed semiconductor switches 5a to 5c are expensive. Further, since the second high-speed semiconductor switches 6a to 6c need to have a withstand capacity, for example, a thyristor is used. Supplying off control signal and on the control signal of the second high-speed semiconductor switch 6c of the first high-speed semiconductor switch 5c as shown at time t 1 of FIG. 5 Therefore when overcurrent detection time, off-time of the switch 5c ( The time required for turn-off is longer, so the switch 6c
Off completion time t 3 of the switch 5c but from the time t 2 which is turned on
The switches 5c and 6c are both turned on in the time until. For this reason, a cross current (a shaded portion in FIG. 5) occurs between the uninterruptible power supply 1 and the second power supply 4. As a result, the responsibility of the first high-speed semiconductor switch 5c (for example, gate turn-off thyristor) is increased, and the withstand capability of the expensive gate turn-off thyrist must be increased more than necessary, which is very disadvantageous economically.

本発明は上記の点に鑑みてなされたものでその目的
は、2つの電源どうしが並列接続されることを防止し、
高価な半導体スイッチの耐量を必要以上に上げることな
く短絡負荷を分離することができる高速半導体スイッチ
回路の制御方法を提供することにある。
The present invention has been made in view of the above points, and its object is to prevent two power supplies from being connected in parallel,
An object of the present invention is to provide a control method of a high-speed semiconductor switch circuit capable of separating a short-circuit load without unnecessarily increasing the tolerance of an expensive semiconductor switch.

E.課題を解決するための手段 本発明は、無停電電源装置よりなる第1電源に、それ
ぞれゲートターンオフサイリスタよりなる第1の半導体
スイッチ、電磁接触器および負荷よりなる直列回路を複
数接続すると共に、前記各第1の半導体スイッチと電磁
接触器との接続点にそれぞれサイリスタよりなる第2の
半導体スイッチの出力側を接続し、各第2の半導体スイ
ッチは前記第1電源よりも短絡容量が大きい第2電源に
接続した半導体スイッチ回路において、過電流検出時に
前記第1の半導体スイッチへオフ制御信号を供給し、前
記過電流検出時刻から略第1の半導体スイッチのオフ時
間と第2の半導体スイッチのオン時間との差の時間経過
後に第2の半導体スイッチへオン制御信号を供給するこ
とを特徴としている。
E. Means for Solving the Problems The present invention connects a first power supply comprising an uninterruptible power supply and a plurality of series circuits each comprising a first semiconductor switch comprising a gate turn-off thyristor, an electromagnetic contactor and a load. The output side of a second semiconductor switch composed of a thyristor is connected to a connection point between each of the first semiconductor switches and the electromagnetic contactor, and each of the second semiconductor switches has a short-circuit capacity greater than that of the first power supply. In the semiconductor switch circuit connected to the second power supply, when an overcurrent is detected, an off control signal is supplied to the first semiconductor switch, and the off time of the first semiconductor switch and the second semiconductor switch are substantially reduced from the overcurrent detection time. And supplying an on-control signal to the second semiconductor switch after a lapse of a difference from the on-time of the second semiconductor switch.

F.作用 常時は第1電源から第1の半導体スイッチを介して複
数の負荷へ電力が供給される。短絡事故時の過電流を検
出すると、まず短絡発生側電路に介挿された第1の半導
体スイッチへオフ制御信号を供給する。次に略第1の半
導体スイッチのオフ時間と第2の半導体スイッチのオン
時間との差の時間経過後に第2の半導体スイッチへオン
制御信号が供給される。このため第1の半導体スイッチ
のオフが完了する前の時刻に第2の半導体スイッチがオ
ン状態になることはない。次に第1の半導体スイッチの
オフが完了し、第2の半導体スイッチがオンになると、
短絡電流は第2電源から流れ、当該短絡負荷側に設けら
れる例えば電磁接触器等で遮断を行う。これによって第
1電源と短絡負荷はすみやかに切離され、第1電源が給
電を行っている他の健全負荷は何ら影響を受けない。こ
のように第1の半導体スイッチと第2の半導体スイッチ
が同時にオン状態となることが避けられるので、第1電
源と第2電源間で横流は発生しない。このため第1の半
導体スイッチの耐量を必要以上に上げなくても済み、装
置の低廉化が図れる。
F. Operation Normally, power is supplied from the first power supply to the plurality of loads via the first semiconductor switch. When an overcurrent at the time of a short circuit accident is detected, first, an off control signal is supplied to the first semiconductor switch interposed in the short circuit generating side electric circuit. Next, an ON control signal is supplied to the second semiconductor switch after a lapse of time substantially equal to the difference between the OFF time of the first semiconductor switch and the ON time of the second semiconductor switch. Therefore, the second semiconductor switch does not turn on at a time before the turning off of the first semiconductor switch is completed. Next, when the first semiconductor switch is turned off and the second semiconductor switch is turned on,
The short-circuit current flows from the second power supply and is interrupted by, for example, an electromagnetic contactor provided on the short-circuit load side. As a result, the first power supply and the short-circuit load are immediately separated from each other, and the other healthy loads to which the first power supply supplies power are not affected at all. Since the first semiconductor switch and the second semiconductor switch are prevented from being turned on at the same time in this manner, no cross current occurs between the first power supply and the second power supply. For this reason, it is not necessary to increase the tolerance of the first semiconductor switch more than necessary, and the cost of the device can be reduced.

G.実施例 以下、図面を参照しながら本発明の一実施例を説明す
る。第1図は本発明の制御方法を第3図の給電回路に適
用したときのタイムチャートを示している。まず常時は
第1高速半導体スイッチ5a〜5cがオン、第2高速半導体
スイッチ6a〜6cがオフ状態になっており、無停電電源装
置1から各負荷2a〜2cへ電力が供給されている。ここで
負荷2c側で短絡事故が発生し、時刻t1において図示しな
い電流検出手段によって過電流を検出すると、第1高速
半導体スイッチ5cにオフ制御信号を供給する。次におよ
そ前記スイッチ5cのオフ時間と前記スイッチ6cのオン時
間との差の時間Tdが経過した時刻t2において、前記スイ
ッチ6cにオン制御信号を供給する。次にt3において第1
高速半導体スイッチ5cのターンオフが完了し、その直後
の時刻t4において第2高速半導体スイッチ6cのターンオ
ンが完了する。尚時刻t3と時刻t4間はギャップであり、
前記スイッチ5c,6cの両方がオフとなる。このように時
刻t3以前に前記スイッチ5cを通して流れていた負荷短絡
電流は、時刻t4以降は前記スイッチ6cを通して流れる。
このため第2の電源4から前記スイッチ6cを介して流れ
る大きな短絡電流によって電磁接触器3cが動作し遮断を
行う。これによって無停電電源装置1と短絡負荷2cはす
みやかに切離され、他の健全負荷2a,2bは何ら影響を受
けない。このように前記スイッチ5cと前記スイッチ6cが
同時にオンになることはないので、無停電電源装置1と
第2の電源4の間で横流は発生しない。このため前記ス
イッチ5cの耐量を必要以上に上げなくても済み、経済的
に非常に有利となる。尚上記のような動作は負荷2a,2b
側で短絡が生じた場合も同様である。
G. Embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a time chart when the control method of the present invention is applied to the power supply circuit of FIG. First, the first high-speed semiconductor switches 5a to 5c are always on and the second high-speed semiconductor switches 6a to 6c are off, and power is supplied from the uninterruptible power supply 1 to the loads 2a to 2c. Here is a short circuit accident occurs at the load 2c side, by the current detecting means (not shown) at time t 1 when detecting an overcurrent, and supplies an OFF control signal to the first high-speed semiconductor switch 5c. At time t 2 Then the time Td of the difference between the approximately the switch 5c off time and the on time of the switch 6c for has elapsed, supplies the ON control signal to the switch 6c. Then at t 3 the first
High-speed semiconductor switch turn-off of the 5c is completed at time t 4 immediately after its turn-on of the second high-speed semiconductor switch 6c completed. It should be noted that between time t 3 and time t 4 is a gap,
Both the switches 5c and 6c are turned off. Thus the time t 3 the load short-circuit current which has been flowing through previous to the switch 5c, the time t 4 after flowing through the switch 6c.
Therefore, a large short-circuit current flowing from the second power supply 4 through the switch 6c causes the electromagnetic contactor 3c to operate and cut off. As a result, the uninterruptible power supply 1 and the short-circuit load 2c are immediately separated from each other, and the other healthy loads 2a and 2b are not affected at all. As described above, since the switches 5c and 6c are not turned on at the same time, no cross current occurs between the uninterruptible power supply 1 and the second power supply 4. For this reason, the switch 5c does not need to have an increased tolerance more than necessary, which is very economically advantageous. The above operation is performed for the loads 2a and 2b.
The same applies when a short circuit occurs on the side.

H.発明の効果 以上のように本発明によれば、過電流検出時に前記第
1の半導体スイッチへオフ制御信号を供給し、前記過電
流検出時刻から略第1の半導体スイッチのオフ時間と第
2の半導体スイッチのオン時間との差の時間経過後に第
2の半導体スイッチへオン制御信号を供給するようにし
たので、第1電源と第2電源が並列接続状態になること
はなく、横流は流れない。このため第1の半導体スイッ
チの責務が上がることはない。これによって第1の半導
体スイッチの耐量を必要以上に上げなくて済む。したが
って高速半導体スイッチ回路を安価に構成することがで
きる。
H. Effects of the Invention As described above, according to the present invention, an off-control signal is supplied to the first semiconductor switch when an overcurrent is detected, and the off-time of the first semiconductor switch and the off-time of the first semiconductor switch are determined from the overcurrent detection time. Since the ON control signal is supplied to the second semiconductor switch after the lapse of the difference between the ON time of the second semiconductor switch and the second semiconductor switch, the first power supply and the second power supply are not connected in parallel, and Not flowing. Therefore, the responsibility of the first semiconductor switch does not increase. As a result, it is not necessary to increase the tolerance of the first semiconductor switch more than necessary. Therefore, a high-speed semiconductor switch circuit can be configured at low cost.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施例を示すタイムチャート、第2図
は従来の給電装置の一例を示す回路図、第3図は半導体
スイッチ回路を備えた給電装置の一例を示す回路図、第
4図は第3図の回路の制御動作の概要を示すタイムチャ
ート、第5図は第3図の回路の制御動作の詳細を示すタ
イムチャートである。 1……無停電電源装置、2a,2b,2c……負荷、3a,3b,3c…
…電磁接触器、4……第2の電源、5a,5b,5c……第1高
速半導体スイッチ、6a,6b,6c……第2高速半導体スイッ
チ。
FIG. 1 is a time chart showing an embodiment of the present invention, FIG. 2 is a circuit diagram showing an example of a conventional power supply device, FIG. 3 is a circuit diagram showing an example of a power supply device provided with a semiconductor switch circuit, FIG. 5 is a time chart showing the outline of the control operation of the circuit of FIG. 3, and FIG. 5 is a time chart showing the details of the control operation of the circuit of FIG. 1 ... uninterruptible power supply, 2a, 2b, 2c ... load, 3a, 3b, 3c ...
... Electromagnetic contactor, 4 ... Second power supply, 5a, 5b, 5c ... First high-speed semiconductor switch, 6a, 6b, 6c ... Second high-speed semiconductor switch.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】無停電電源装置よりなる第1電源に、それ
ぞれゲートターンオフサイリスタよりなる第1の半導体
スイッチ、電磁接触器および負荷よりなる直列回路を複
数接続すると共に、前記各第1の半導体スイッチと電磁
接触器との接続点にそれぞれサイリスタよりなる第2の
半導体スイッチの出力側を接続し、各第2の半導体スイ
ッチは前記第1電源よりも短絡容量が大きい第2電源に
接続した半導体スイッチ回路において、 過電流検出時に前記第1の半導体スイッチへオフ制御信
号を供給し、前記過電流検出時刻から略第1の半導体ス
イッチのオフ時間と第2の半導体スイッチのオン時間と
の差の時間経過後に第2の半導体スイッチへオン制御信
号を供給することを特徴とする高速半導体スイッチ回路
の制御方法。
1. A first power supply comprising an uninterruptible power supply device, wherein a plurality of first semiconductor switches each comprising a gate turn-off thyristor, a plurality of series circuits each comprising an electromagnetic contactor and a load are connected, and each of said first semiconductor switches is provided. The output side of a second semiconductor switch composed of a thyristor is connected to a connection point between the second semiconductor switch and the electromagnetic contactor, and each of the second semiconductor switches is connected to a second power supply having a short-circuit capacity larger than the first power supply. In the circuit, when an overcurrent is detected, an off control signal is supplied to the first semiconductor switch, and a time corresponding to a difference between an off time of the first semiconductor switch and an on time of the second semiconductor switch from the overcurrent detection time. A control method for a high-speed semiconductor switch circuit, comprising supplying an ON control signal to a second semiconductor switch after a lapse of time.
JP2108158A 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit Expired - Lifetime JP2936642B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2108158A JP2936642B2 (en) 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2108158A JP2936642B2 (en) 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit

Publications (2)

Publication Number Publication Date
JPH048136A JPH048136A (en) 1992-01-13
JP2936642B2 true JP2936642B2 (en) 1999-08-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Also Published As

Publication number Publication date
JPH048136A (en) 1992-01-13

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