JPH048136A - Controlling method for high-speed semiconductor switch - Google Patents

Controlling method for high-speed semiconductor switch

Info

Publication number
JPH048136A
JPH048136A JP2108158A JP10815890A JPH048136A JP H048136 A JPH048136 A JP H048136A JP 2108158 A JP2108158 A JP 2108158A JP 10815890 A JP10815890 A JP 10815890A JP H048136 A JPH048136 A JP H048136A
Authority
JP
Japan
Prior art keywords
speed semiconductor
time
semiconductor switch
switch
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2108158A
Other languages
Japanese (ja)
Other versions
JP2936642B2 (en
Inventor
Masaaki Ono
正明 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP2108158A priority Critical patent/JP2936642B2/en
Publication of JPH048136A publication Critical patent/JPH048136A/en
Application granted granted Critical
Publication of JP2936642B2 publication Critical patent/JP2936642B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To prevent two power sources to be connected in parallel by supplying an off control signal to a to the first high-speed semiconductor switch at detection of an overcurrent, and supplying an on control signal to the second high-speed semiconductor after passage of the time of the difference between the off time of the first high-speed semiconductor switch and the on time of the second high-speed semiconductor switch from that time. CONSTITUTION:When it detects an overcurrent at time t1, it supplies an off signal to the first high-speed semiconductor switch 5c. Next, at the time t2 when the time Td of the difference between the off time of the switch 5c and on time of a switch 6c has passed, an on signal is supplied to the switch 6c. Next, at t3, the turning-off of the first semiconductor conductor switch 5c completes, and at time t4 immediately after it, the turning-off of the second high-speed semiconductor switch 6c completes. And by the large short-circuit current flowing from a second power source through the switch 6c, an electromagnetic contactor operates and performs shut-off. Hereby, uninterruptive power unit and short-circuit load are quickly separated, and other sound loads are not affected at all.

Description

【発明の詳細な説明】 A 産業上の利用分野 本発明は、常時第1の電源から複数の分岐負荷へ給電を
行い、短絡発生時は給電を第2の電源側へ高速度で切換
える高速半導体スイッチ回路の制御方法に関する。
DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention is directed to a high-speed semiconductor device that constantly supplies power from a first power source to a plurality of branch loads, and switches the power supply to a second power source at high speed when a short circuit occurs. This invention relates to a method of controlling a switch circuit.

B0発明の概要 本発明は、短絡容量の小さい第1の電源から第1高速半
導体スイッチを介して常時複数の分岐負荷へ給電を行い
、短絡発生時は短絡容量の大きい第2の電源から第2高
速半導体スイッチを介して短絡発生側負荷へ電流を流す
高速半導体スイッチ回路の制御方法において、 短絡事故等による過電流を検出したときは、第1高速半
導体スイッチへ直ちにオフ制御信号を供給するとともに
、第2高速半導体スイッチへのオン制御信号を、第1高
速半導体スイッチのオフ時間と第2高速半導体スイッチ
のオン時間との差分だけ遅らせて供給することにより、 前記スイッチの切換え時に、第1の電源と第2の電源が
並列接続状態となって横流が発生することを防止し、短
絡容量の小さい第1の電源側に設けられる第1高速半導
体スイッチの耐量を必要以上に上げることがないように
したものである。
B0 Summary of the Invention The present invention constantly supplies power to a plurality of branch loads from a first power source with a small short-circuit capacity via a first high-speed semiconductor switch, and when a short circuit occurs, the power is supplied from a second power source with a large short-circuit capacity to a second power source with a large short-circuit capacity. In a method for controlling a high-speed semiconductor switch circuit that causes current to flow through a high-speed semiconductor switch to a load on the short-circuit side, when an overcurrent due to a short-circuit accident, etc. is detected, an off control signal is immediately supplied to the first high-speed semiconductor switch, and, By supplying the on control signal to the second high speed semiconductor switch with a delay by the difference between the off time of the first high speed semiconductor switch and the on time of the second high speed semiconductor switch, the first power supply is supplied at the time of switching the switch. and the second power source are connected in parallel to prevent cross current from occurring, and to prevent the withstand capacity of the first high-speed semiconductor switch provided on the first power source side having a small short circuit capacity from being increased more than necessary. This is what I did.

C1従来の技術 従来、無停電電源装置等の短絡容量の小さな電源から多
数の負荷へ給電を行うシステムは例えば第2図のように
構成されている。第2図において無停電電源装置lと複
数の負荷2a、  2b、2Cを結ふ分岐電路には電磁
接触器3a、3b、3cカ各々介挿されている。この給
電システムにおいて、一部の負荷、例えば負荷2cで短
絡事故が発生すると、短絡電流によって無停電電源装置
1が停止したり、又は電磁接触器3cがトリップするま
での時間、電源電圧が低下し他の負荷2a、2bに悪影
響が及ぶ。このような不都合を解消するために例えば第
3図のような回路構成によって電源を切換えることがな
されている。すなわち無停電電源装置lと同期し且つ短
絡容量の大きい第2の電源4を設け、無停電電源装置1
と電磁接触器3a、3b、3cを結ぶ電路に第1高速半
導体スイッチ5a、5b、5cを各々介挿し、第2の電
源4と電磁接触器3a、3b、3cを結ぶ電路に第2高
速半導体スイッチ6a、6b、6cを各々介挿している
。第3図において常時は第2高速半導体スイッチ6a、
6b、6cをオフ、第1高速半導体スイッチ5a、5b
、5cをオンにし、該スイッチ5a、5b、5cを介し
て無停電電源装置lから各負荷2a、2b、2cへ給電
を行う。
C1 Prior Art Conventionally, a system for supplying power to a large number of loads from a power source with a small short-circuit capacity, such as an uninterruptible power supply, has been configured as shown in FIG. 2, for example. In FIG. 2, electromagnetic contactors 3a, 3b, and 3c are inserted in branch circuits connecting the uninterruptible power supply l and a plurality of loads 2a, 2b, and 2C, respectively. In this power supply system, if a short circuit occurs in some load, for example load 2c, the power supply voltage will drop for a period of time until the short circuit current causes the uninterruptible power supply 1 to stop or the electromagnetic contactor 3c trips. Other loads 2a and 2b are adversely affected. In order to eliminate such inconveniences, the power source is switched using a circuit configuration as shown in FIG. 3, for example. That is, a second power source 4 that is synchronized with the uninterruptible power supply l and has a large short circuit capacity is provided, and the uninterruptible power supply l
A first high-speed semiconductor switch 5a, 5b, 5c is inserted in the electric path connecting the and magnetic contactors 3a, 3b, 3c, respectively, and a second high-speed semiconductor switch is inserted in the electric path connecting the second power source 4 and the magnetic contactor 3a, 3b, 3c. Switches 6a, 6b, and 6c are inserted respectively. In FIG. 3, the second high-speed semiconductor switch 6a is always
6b, 6c off, first high speed semiconductor switch 5a, 5b
, 5c are turned on, and power is supplied from the uninterruptible power supply l to each load 2a, 2b, 2c via the switches 5a, 5b, 5c.

また一部の負荷、例えば負荷2cで第4図に示すように
短絡が発生した場合は、図示しない電流検出手段によっ
て過電流を検出した時点(時刻1+)で第1高速半導体
スイッチ5cをオフ制御すると同時に第2高速半導体ス
イッチ6cをオン制御する。すると無停電電源装置1に
代わって第2の電源4から負荷2C側の短絡事故点へ電
流か流れる。
Furthermore, if a short circuit occurs in some load, for example load 2c, as shown in FIG. 4, the first high-speed semiconductor switch 5c is turned off at the time when an overcurrent is detected by a current detection means (not shown) (time 1+). At the same time, the second high-speed semiconductor switch 6c is turned on. Then, instead of the uninterruptible power supply 1, current flows from the second power supply 4 to the short circuit fault point on the load 2C side.

このため電磁接触器3cがトリップして負荷2cのみか
切離される。このような電源切換動作は他の負荷2a、
  2b側て短絡が発生しても同様に行われる。したが
って無停電電源装置1には短絡による過大な電流が流れ
ることはなく、前述のような電源停止や電源電圧の低下
等は発生しない。
Therefore, the electromagnetic contactor 3c trips and only the load 2c is disconnected. Such power supply switching operation is performed by other loads 2a,
The same process is performed even if a short circuit occurs on the 2b side. Therefore, an excessive current does not flow through the uninterruptible power supply 1 due to a short circuit, and the power supply stoppage or drop in power supply voltage as described above does not occur.

D 発明が解決しようとする課題 しかし第3図の回路では、使用する半導体スイッチ(5
a〜5c、6a〜6C)に以下の問題が生じる。第1高
速半導体スイッチ5a〜5cは遮断機能が必要であるた
めゲートターンオフサイリスタ等が使用されることが多
く、高価であるため耐量をむやみに上げられない。また
第2高速半導体スイッチ6a〜6cは耐量が必要である
ため例えばサイリスタが使用される。このため過電流検
出時に第5図の時刻t1に示すように第1高速半導体ス
イッチ5cのオフ制御信号と第2高速半導体スイッチ6
Cのオン制御信号を同時に供給すると、前記スイッチ5
cのオフタイム(ターンオフに要する時間)の方が長い
ため、前記スイッチ6Cがオンした時刻t、から前記ス
イッチ5Cのオフ完了時刻t3までの時間でスイッチ5
c、6cが両方オン状態になってしまう。このため無停
電電源装置1と第2の電源4の間で横流(第5図の斜線
部分)が発生してしまう。これによって第1高速半導体
スイッチ5C(例えばゲートターンオフサイリスタ)の
責務が大きくなり、高価なゲートターンオフサイリスタ
の耐量を必要以上に上げなくてはならず経済的に非常に
不利である。
D Problems to be Solved by the Invention However, in the circuit of Fig. 3, the semiconductor switches (5
The following problems arise in a to 5c, 6a to 6C). Since the first high-speed semiconductor switches 5a to 5c require a cutoff function, a gate turn-off thyristor or the like is often used, and since it is expensive, the withstand capacity cannot be increased unnecessarily. Further, since the second high-speed semiconductor switches 6a to 6c need to have a high tolerance, for example, thyristors are used. Therefore, when an overcurrent is detected, as shown at time t1 in FIG.
When ON control signals of C are supplied at the same time, the switch 5
Since the off time (time required for turn-off) of switch 5C is longer, the time from time t when the switch 6C is turned on to time t3 when the switch 5C is turned off is
c and 6c are both turned on. Therefore, a cross current (the shaded area in FIG. 5) occurs between the uninterruptible power supply 1 and the second power supply 4. This increases the responsibility of the first high-speed semiconductor switch 5C (for example, a gate turn-off thyristor), and the withstand capability of the expensive gate turn-off thyristor must be increased more than necessary, which is extremely disadvantageous economically.

本発明は上記の点に鑑みてなされたものでその目的は、
2つの電源どうしが並列接続されることを防止し、高価
な半導体スイッチの耐量を必要以上に上げることなく短
絡負荷を分離することができる高速半導体スイッチ回路
の制御方法を提供することにある。
The present invention has been made in view of the above points, and its purpose is to:
To provide a control method for a high-speed semiconductor switch circuit capable of preventing two power supplies from being connected in parallel and separating a short-circuit load without unnecessarily increasing the withstand capability of an expensive semiconductor switch.

E8課題を解決するための手段 本発明は、第1の電源と複数の負荷を結ぶ各分岐電路に
各々介挿され、電流しゃ断機能を有するとともに常時は
オン状態にされる第1高速半導体スイッチと、前記複数
の第1高速半導体スイッチおよび負荷の各共通接続点と
、前記第1の電源に対して同期運転される第2の電源と
を結ぶ各電路に介挿され、常時はオフ状態にされる第2
高速半導体スイッチとを備えた高速半導体スイッチ回路
において、 過電流検出時に前記第1高速半導体スイッチへオフ制御
信号を供給し、前記過電流検出時刻から略第1高速半導
体スイッチのオフ時間と第2高速半導体スイッチのオン
時間との差の時間経過後に第2高速半導体スイッチへオ
ン制御信号を供給することを特徴としている。
E8 Means for Solving Problems The present invention provides a first high-speed semiconductor switch that is inserted into each branch circuit connecting a first power source and a plurality of loads, has a current cutoff function, and is always in an on state. , is inserted in each electric path connecting each common connection point of the plurality of first high-speed semiconductor switches and the load and a second power source operated in synchronization with the first power source, and is normally kept in an OFF state. The second
and a high-speed semiconductor switch, wherein an off control signal is supplied to the first high-speed semiconductor switch when an overcurrent is detected, and the off-time of the first high-speed semiconductor switch and the second high-speed semiconductor switch are changed from the overcurrent detection time to approximately the off-time of the first high-speed semiconductor switch and the second high-speed semiconductor switch. The present invention is characterized in that the on-control signal is supplied to the second high-speed semiconductor switch after a time difference from the on-time of the semiconductor switch has elapsed.

F1作用 常時は第1の電源から第1高速半導体スイッチを介して
複数の負荷へ電力が供給される。短絡事故時の過電流を
検出すると、まず短絡発生側電路に介挿された第1高速
半導体スイッチへオフ制御信号を供給する。次に略第1
高速半導体スイッチのオフ時間と第2高速半導体スイッ
チのオン時間との差の時間経過後に第2高速半導体スイ
ソチヘオン制御信号が供給される。このため第1高速半
導体スイッチのオフか完了する前の時刻に第2高速半導
体スイッチがオン状態になることはない。
During F1 operation, power is supplied from the first power supply to the plurality of loads via the first high-speed semiconductor switch. When an overcurrent at the time of a short circuit accident is detected, an off control signal is first supplied to the first high speed semiconductor switch inserted in the circuit on the side where the short circuit has occurred. Next, approximately the first
The second high speed semiconductor switch on control signal is provided after a time period equal to the difference between the off time of the high speed semiconductor switch and the on time of the second high speed semiconductor switch. Therefore, the second high-speed semiconductor switch will not be turned on at a time before the first high-speed semiconductor switch is turned off.

次に第1高速半導体スイッチのオフが完了し、第2高速
半導体スイッチかオンになると、短絡電流は第2の電源
から流れ、当該短絡負荷側に設けられる例えば電磁接触
器等で遮断を行う。これによって第1の電源と短絡負荷
はすみやかに切離され、第1の電源か給電を行っている
他の健全負荷は何ら影響を受けない。このように第1高
速半導体スイッチと第2高速半導体スイッチが同時にオ
ン状態となることが避けられるので、第1の電源と第2
の電源間で横流は発生しない。このため第1高速半導体
スイッチの耐量を必要以上に上げなくても済み、装置の
低廉化が図れる。
Next, when the first high-speed semiconductor switch is turned off and the second high-speed semiconductor switch is turned on, the short-circuit current flows from the second power source and is interrupted by, for example, an electromagnetic contactor or the like provided on the short-circuit load side. As a result, the first power source and the short-circuited load are quickly disconnected, and other healthy loads that are being supplied with power by the first power source are not affected at all. In this way, it is possible to prevent the first high-speed semiconductor switch and the second high-speed semiconductor switch from being turned on at the same time.
No cross current occurs between the power supplies. Therefore, it is not necessary to increase the withstand capacity of the first high-speed semiconductor switch more than necessary, and the cost of the device can be reduced.

G、実施例 以下、図面を参照しながら本発明の一実施例を説明する
。第1図は本発明の制御方法を第3図の給電回路に適用
したときのタイムチャートを示している。まず常時は第
1高速半導体スイッチ5a〜5cがオン、第2高速半導
体スイッチ6a〜6Cがオフ状態になっており、無停電
電源装置1から各負荷2a〜2Cへ電力が供給されてい
る。ここで負荷2C側で短絡事故が発生し、時刻t、に
おいて図示しない電流検出手段によって過電流を検出す
ると、第1高速半導体スイッチ5Cにオフ制御信号を供
給する。次におよそ前記スイッチ5Cのオフ時間と前記
スイッチ6Cのオン時間との差の時間Tdが経過した時
刻t、において、前記スイッチ6Cにオン制御信号を供
給する。次にt3において第1高速半導体スイッチ5C
のターンオフが完了し、その直後の時刻t4において第
2高速半導体スイッチ6Cのターンオンが完了する。
G. Embodiment Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a time chart when the control method of the present invention is applied to the power supply circuit of FIG. First, the first high-speed semiconductor switches 5a to 5c are always on, the second high-speed semiconductor switches 6a to 6C are off, and power is supplied from the uninterruptible power supply 1 to each load 2a to 2C. Here, when a short circuit accident occurs on the load 2C side and an overcurrent is detected by a current detection means (not shown) at time t, an OFF control signal is supplied to the first high speed semiconductor switch 5C. Next, at time t, when a time Td, which is the difference between the off time of the switch 5C and the on time of the switch 6C, has elapsed, an on control signal is supplied to the switch 6C. Next, at t3, the first high speed semiconductor switch 5C
The turn-off of the second high-speed semiconductor switch 6C is completed, and immediately after that, the turn-on of the second high-speed semiconductor switch 6C is completed at time t4.

尚時刻t3と時刻t4間はギャップであり、前記スイッ
チ5c、6cの両方がオフとなる。このように時刻t3
以前に前記スイッチ5Cを通して流れていた負荷短絡電
流は、時刻t4以降は前記スイッチ6cを通して流れる
。このため第2の電源4から前記スイッチ6Cを介して
流れる大きな短絡電流によって電磁接触器3Cが動作し
遮断を行う。
Note that there is a gap between time t3 and time t4, and both the switches 5c and 6c are turned off. In this way, time t3
The load short-circuit current that previously flowed through the switch 5C flows through the switch 6c after time t4. Therefore, the electromagnetic contactor 3C operates due to the large short-circuit current flowing from the second power source 4 through the switch 6C, thereby interrupting the operation.

これによって無停電電源装置lと短絡負荷2Cはすみや
かに切離され、他の健全負荷2a、2bは何ら影響を受
けない。このように前記スイッチ5Cと前記スイッチ6
Cが同時にオンになることはないので、無停電電源装置
lと第2の電源4の間で横流は発生しない。このため前
記スイッチ5Cの耐量を必要以上に上げなくても済み、
経済的に非常に何利となる。尚上記のような動作は負荷
2a、2b側で短絡が生じた場合も同様である。
As a result, the uninterruptible power supply l and the short-circuited load 2C are quickly disconnected, and the other healthy loads 2a and 2b are not affected at all. In this way, the switch 5C and the switch 6
Since C are never turned on at the same time, no cross current occurs between the uninterruptible power supply l and the second power supply 4. Therefore, there is no need to increase the withstand capacity of the switch 5C more than necessary.
It is economically very profitable. Incidentally, the above operation is the same even when a short circuit occurs on the loads 2a and 2b side.

H発明の効果 以」−のように本発明によれば、過電流検出時に前記第
1高速半導体スイッチへオフ制御信号を供給し、前記過
電流検出時刻から略第1高速半導体スイッチのオフ時間
と第2高速半導体スイッチのオン時間との差の時間経過
後に第2高速半導体スイッチへオン制御信号を供給する
ようにしたので、第1の電源と第2の電源が並列接続状
態になることはなく、横流は流れない。このため第1高
速半導体スイッチの責務が上がることはない。これによ
って第1高速半導体スイッチの耐量を必要以上に上げな
くて済む。したがって高速半導体スイッチ回路を安価に
構成することができる。
According to the present invention, an off control signal is supplied to the first high-speed semiconductor switch at the time of overcurrent detection, and the off-time of the first high-speed semiconductor switch is approximately equal to the off-time of the first high-speed semiconductor switch from the overcurrent detection time. Since the on-control signal is supplied to the second high-speed semiconductor switch after the time difference between the on-time of the second high-speed semiconductor switch and the second high-speed semiconductor switch has elapsed, the first power supply and the second power supply are not connected in parallel. , no cross current flows. Therefore, the responsibility of the first high-speed semiconductor switch does not increase. This eliminates the need to increase the withstand capability of the first high-speed semiconductor switch more than necessary. Therefore, a high-speed semiconductor switch circuit can be constructed at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示すタイムチャート、第2図
は従来の給電装置の一例を示す回路図、第3図は半導体
スイッチ回路を備えた給電装置の一例を示す回路図、第
4図は第3図の回路の制御動作の概要を示すタイムチャ
ート、第5図は第3図の回路の制御動作の詳細を示すタ
イムチャートである。 1・・無停電電源装置、2a、  2b、2C・・・負
荷、3a、3b、3c・・・電磁接触器、4・・・第2
の電源、5a、5b、5c・・・第1高速半導体スイッ
チ、6a、5b、5c・・・第2高速半導体スイッチ。 第1図 叡]色filの制研タイへ千イート スイ、す5C/I’7’ト/f+lzス   (ON)
         0FF−一一一第4図 タイムチャート
FIG. 1 is a time chart showing an embodiment of the present invention, FIG. 2 is a circuit diagram showing an example of a conventional power supply device, FIG. 3 is a circuit diagram showing an example of a power supply device equipped with a semiconductor switch circuit, and FIG. 3 is a time chart showing an outline of the control operation of the circuit shown in FIG. 3, and FIG. 5 is a time chart showing details of the control operation of the circuit shown in FIG. 3. 1... Uninterruptible power supply, 2a, 2b, 2C... Load, 3a, 3b, 3c... Magnetic contactor, 4... Second
power supplies, 5a, 5b, 5c...first high speed semiconductor switches, 6a, 5b, 5c...second high speed semiconductor switches. Figure 1] Color fil's Seiken tie, 5C/I'7't/f+lz (ON)
0FF-111 Figure 4 Time Chart

Claims (1)

【特許請求の範囲】[Claims] (1)第1の電源と複数の負荷を結ぶ各分岐電路に各々
介挿され、電流しゃ断機能を有するとともに常時はオン
状態にされる第1高速半導体スイッチと、前記複数の第
1高速半導体スイッチおよび負荷の各共通接続点と、前
記第1の電源に対して同期運転される第2の電源とを結
ぶ各電路に介挿され、常時はオフ状態にされる第2高速
半導体スイッチとを備えた高速半導体スイッチ回路にお
いて、 過電流検出時に前記第1高速半導体スイッチへオフ制御
信号を供給し、前記過電流検出時刻から略第1高速半導
体スイッチのオフ時間と第2高速半導体スイッチのオン
時間との差の時間経過後に第2高速半導体スイッチへオ
ン制御信号を供給することを特徴とする高速半導体スイ
ッチ回路の制御方法。
(1) A first high-speed semiconductor switch that is inserted into each branch circuit connecting a first power source and a plurality of loads, has a current cutoff function, and is always on, and the plurality of first high-speed semiconductor switches. and a second high-speed semiconductor switch that is inserted into each electrical path connecting each common connection point of the load and a second power source operated in synchronization with the first power source, and is normally kept in an OFF state. In the high speed semiconductor switch circuit, an off control signal is supplied to the first high speed semiconductor switch when an overcurrent is detected, and from the overcurrent detection time, the off time of the first high speed semiconductor switch and the on time of the second high speed semiconductor switch are approximately changed. A method for controlling a high-speed semiconductor switch circuit, comprising supplying an ON control signal to a second high-speed semiconductor switch after a time period corresponding to the difference between .
JP2108158A 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit Expired - Lifetime JP2936642B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2108158A JP2936642B2 (en) 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2108158A JP2936642B2 (en) 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit

Publications (2)

Publication Number Publication Date
JPH048136A true JPH048136A (en) 1992-01-13
JP2936642B2 JP2936642B2 (en) 1999-08-23

Family

ID=14477431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2108158A Expired - Lifetime JP2936642B2 (en) 1990-04-24 1990-04-24 Control method of high-speed semiconductor switch circuit

Country Status (1)

Country Link
JP (1) JP2936642B2 (en)

Also Published As

Publication number Publication date
JP2936642B2 (en) 1999-08-23

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