JP2931451B2 - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JP2931451B2 JP2931451B2 JP3239139A JP23913991A JP2931451B2 JP 2931451 B2 JP2931451 B2 JP 2931451B2 JP 3239139 A JP3239139 A JP 3239139A JP 23913991 A JP23913991 A JP 23913991A JP 2931451 B2 JP2931451 B2 JP 2931451B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- silicon substrate
- layer
- region
- electron attracting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は太陽電池素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell device.
【０００２】[0002]
【発明の背景】第一次石油ショック時に代替エネルギー
の必要性がクローズアップされ、無尽蔵でクリーンな太
陽エネルギーを源とする太陽電池が注目を浴び実用化の
ための低コストな太陽電池の開発がスタートした。開発
は着実に成果をあげ、ここ１０年間でコストは１００分
の１まで低減した。しかし、電力用として見た場合一般
の商用電力と対比されるとコスト的には高く、実用化に
はまだ遠いという感があった。ところが、最近、地球環
境問題で脚光を浴び、開発は促進され実用化も間近なと
ころまでせまってきている。このような中で、低コスト
な太陽電池の実用化研究に加え、超高効率化を目的とし
た研究開発も新たに必要になってきた。すなわち、高効
率化は、低コスト化に非常に重要な因子となる。単結晶
シリコン太陽電池では、理論的には２８％以上が達成可
能であることが予測されている。BACKGROUND OF THE INVENTION The need for alternative energy during the first oil crisis has been highlighted, and solar cells using inexhaustible and clean solar energy have been receiving attention, and low-cost solar cells for practical use have been developed. It started. Development has been steadily successful and costs have been reduced by a factor of 100 in the last decade. However, when viewed as electric power, there is a feeling that the cost is high when compared with general commercial power, and it is still far from practical use. However, recently, it has been spotlighted on global environmental issues, and its development has been promoted and its practical use is approaching. Under such circumstances, in addition to research on practical use of low-cost solar cells, research and development for the purpose of ultra-high efficiency have been newly required. That is, high efficiency is a very important factor for cost reduction. For single crystal silicon solar cells, it is predicted that 28% or more is theoretically achievable.
【０００３】超高効率太陽電池の研究開発には、高品質
単結晶シリコン基板の持つ特性を最大限に引き出すこと
が重要である。そのためには、キャリアや光の有効利用
およびキャリアのライフタイムが維持できるようなセル
構造および製造プロセスを開発する必要がある。そこ
で、本発明者等は、特願平２−２２６９４４号で、低反
射構造でかつキャリアの再結合を防ぐことができるスル
ーホールバックコンタクト型太陽電池素子を提案した。
この構造を図１に示す。図１において、１はｐ型単結晶
シリコン基板、２は単結晶シリコン基板１に形成された
スルーホール、３はシリコン基板１の裏面側のスルーホ
ール近傍に形成されたｎ+ 領域、４はｎ+ 領域の近傍に
形成されたｐ+ 領域、５はｐ+ 領域部に形成された正電
極、６はｎ+ 領域に形成された負電極、７、８、９はシ
リコン基板１の表面側とスルーホール２部分にそれぞれ
形成されたパシベーッション層、正電荷を有する電子引
付層、および反射防止層である。In research and development of ultra-high efficiency solar cells, it is important to maximize the characteristics of a high quality single crystal silicon substrate. For that purpose, it is necessary to develop a cell structure and a manufacturing process that can maintain the effective use of carriers and light and maintain the lifetime of carriers. In view of this, the present inventors have proposed a through-hole back-contact solar cell element having a low reflection structure and capable of preventing carrier recombination in Japanese Patent Application No. 2-226944.
This structure is shown in FIG. In FIG. 1, 1 is a p-type single-crystal silicon substrate, 2 is a through-hole formed in the single-crystal silicon substrate 1, 3 is an n + region formed near the through-hole on the back side of the silicon substrate 1, and 4 is n The p + region formed near the + region, 5 is a positive electrode formed in the p + region, 6 is a negative electrode formed in the n + region, 7, 8, and 9 are the surface side of the silicon substrate 1. A passivation layer, a positively-charged electron attracting layer, and an anti-reflection layer respectively formed in the through-hole 2 portion.
【０００４】シリコン基板１の表面側に正電荷を有する
電子引付層８を形成すると、この正電荷の影響でシリコ
ン基板１と電子引付層８の界面近くでは多数キャリアで
ある正孔が基板１の内部へ押しやられ、少数キャリアで
ある電子が基板１の表面に引きつけられる。この結果、
基板１の表面にごく薄いｎ型反転層１０が生じる。この
表面付近のキャリアはスルーホール４部分のｎ型反転層
１０を経由して、シリコン基板１の裏面側のｎ+ 領域３
へ導かれ、負電極５から取り出される。このように負電
極５がシリコン基板の裏面側に形成されることから、シ
リコン基板の表面には入射光を遮る電極は存在せず。変
換効率を著しく高めることが可能になる。When an electron attracting layer 8 having a positive charge is formed on the surface side of the silicon substrate 1, holes serving as majority carriers are generated near the interface between the silicon substrate 1 and the electron attracting layer 8 under the influence of the positive charge. 1, and electrons serving as minority carriers are attracted to the surface of the substrate 1. As a result,
An extremely thin n-type inversion layer 10 is formed on the surface of the substrate 1. The carriers in the vicinity of the front surface pass through the n-type inversion layer 10 in the through hole 4 portion, and pass through the n + region 3 on the back surface side of the silicon substrate 1.
And taken out of the negative electrode 5. As described above, since the negative electrode 5 is formed on the back surface side of the silicon substrate, there is no electrode that blocks incident light on the surface of the silicon substrate. Conversion efficiency can be significantly increased.
【０００５】ところが、上述のような反転層１０を形成
して電子を裏面側から取り出す場合、反転層１０の直列
抵抗が太陽電池素子の変換効率に大きく影響するので、
この反転層１０は直列抵抗を下げるようなものでなけれ
ばならない。また、スルーホールの径が大きいと受光面
積が減少するので、径はできるだけ小さい方が望ましい
が、製造技術上からの制約がある。However, when the above-described inversion layer 10 is formed and electrons are taken out from the back side, the series resistance of the inversion layer 10 greatly affects the conversion efficiency of the solar cell element.
This inversion layer 10 must be one that reduces the series resistance. Further, if the diameter of the through hole is large, the light receiving area is reduced. Therefore, it is desirable that the diameter is as small as possible, but there is a limitation in manufacturing technology.
【０００６】[0006]
【発明の目的】本発明は、このような背景のもとに成さ
れたものであり、直列抵抗の増大化を解消した超高効率
の太陽電池素子を提供することを目的とするものであ
る。SUMMARY OF THE INVENTION The present invention has been made under such a background, and has as its object to provide an ultra-high-efficiency solar cell element in which an increase in series resistance is eliminated. .
【０００７】[0007]
【発明の構成】本発明によれば、ｐ型単結晶シリコン基
板に複数のスルーホールを設け、このシリコン基板裏面
側のスルーホール近傍にｎ+ 領域を設け、このｎ+ 領域
の近傍にｐ+ 領域を設け、このｐ+ 領域部に正電極を設
け、前記ｎ+ 領域部に負電極を設け、前記シリコン基板
の表面側とスルーホール部の表面にパシベーション層、
電子引付層、および反射防止層を順次設けた太陽電池素
子において、前記電子引付層の電荷密度が３×１０11〜
２×１０13ｃｍ-2であり、且つ前記スルーホールの孔径
が５〜５０μｍで孔間ピッチが１０〜２００μｍである
ことを特徴とする太陽電池素子が提供される。According to the present invention DETAILED DESCRIPTION OF THE INVENTION, a plurality of through-holes in the p-type single crystal silicon substrate, an n + region disposed near the through holes of the silicon substrate backside, p in the vicinity of the n + region + A region, a positive electrode is provided in the p + region, a negative electrode is provided in the n + region, and a passivation layer is provided on the surface side of the silicon substrate and the surface of the through hole.
In a solar cell element in which an electron attracting layer and an antireflection layer are sequentially provided, the charge density of the electron attracting layer is 3 × 10 11 to
A solar cell element is provided, which has a size of 2 × 10 13 cm −2 , a hole diameter of the through hole of 5 to 50 μm, and a pitch between holes of 10 to 200 μm.
【０００８】[0008]
【作用】上記のように、電荷密度が３×１０11以上の電
子引付層を形成することによって、シリコン基板表面の
表面ポテンシャルが向上してシリコン基板の表面部分に
形成される反転層の直列抵抗を下げることができるとと
もに、電荷密度が２×１０13ｃｍ-2以下の電荷引付層を
形成することによって、反転層が深くなりすぎることに
よって生じる変換効率の低下を防止でき、さらに孔径が
５〜５０μｍで孔間ピッチが１０〜２００μｍのスルー
ホールを形成することによって、集光面積の低下に伴う
変換効率の低下が防止でき、高効率の太陽電池素子が得
られる。As described above, by forming the electron attracting layer having a charge density of 3 × 10 11 or more, the surface potential of the silicon substrate surface is improved, and the inversion layer formed on the surface portion of the silicon substrate is connected in series. By forming a charge attracting layer having a charge density of 2 × 10 13 cm −2 or less, it is possible to prevent a decrease in conversion efficiency caused by the inversion layer being too deep, and to further reduce the pore size. By forming a through hole having a hole pitch of 5 to 50 μm and a hole pitch of 10 to 200 μm, it is possible to prevent a decrease in conversion efficiency due to a decrease in the light-collecting area, and to obtain a highly efficient solar cell element.
【０００９】[0009]
【実施例】以下、本発明の実施例を添付図面に基づき詳
細に説明する。本発明に係る太陽電池素子の構造自体
は、図１に示す太陽電池素子の構造と同一である。シリ
コン基板１としては、ＣＺ法などによって形成された比
抵抗１〜１００Ωｃｍ程度のｐ型単結晶シリコン基板な
どが好適に用いられる。ｎ+ 領域３とｐ+ 領域４は熱拡
散法やイオン注入法によって形成され、正電極５と負電
極６はアルミニウム、クロム、ニッケル、金、銀などを
用いた蒸着法やスパッタリング法によって形成される。
この電極、特に正電極５は、シリコン基板１の裏面側に
達した光を反射してもう一度シリコン基板１内に戻すこ
とができるようにできるだけ広い領域に亘って形成する
ことが望ましい。また、シリコン基板１の表面とスルー
ホール２部分には、キャリアの再結合を防ぐための厚み
１００Å程度の酸化シリコン（ＳｉＯ2 ）膜などから成
るパシベーション層７が熱酸化法やプラズマＣＶＤ法な
どによって形成される。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. The structure itself of the solar cell element according to the present invention is the same as the structure of the solar cell element shown in FIG. As the silicon substrate 1, a p-type single crystal silicon substrate having a specific resistance of about 1 to 100 Ωcm formed by a CZ method or the like is preferably used. The n + region 3 and the p + region 4 are formed by a thermal diffusion method or an ion implantation method, and the positive electrode 5 and the negative electrode 6 are formed by a vapor deposition method or a sputtering method using aluminum, chromium, nickel, gold, silver, or the like. You.
This electrode, particularly the positive electrode 5, is desirably formed over an area as large as possible so that light reaching the back side of the silicon substrate 1 can be reflected and returned into the silicon substrate 1 again. A passivation layer 7 made of a silicon oxide (SiO 2 ) film or the like having a thickness of about 100 ° for preventing the recombination of carriers is formed on the surface of the silicon substrate 1 and the through hole 2 by thermal oxidation or plasma CVD. It is formed.
【００１０】図２に電子引付層８の電荷密度とシリコン
基板１の表面ポテンシャルとの関係を示す。なお、図２
のシリコン基板は、アクセプタとしてボロンを１．５×
１０16個含有するものである。図２で明らかなように、
電子引付層８の電荷密度が１×１０11ｃｍ-2からシリコ
ン基板１の表面ポテンシャルは急上昇し、電子引付層８
の電荷密度が３×１０11ｃｍ-2以上になると表面ポテン
シャルは０．７５Ｖになり、それ以上電荷密度が増加し
ても表面ポテンシャルの増加率は鈍化する。すなわち、
電子引付層８の電荷密度は、３×１０11ｃｍ-2以上あれ
ば、シリコン基板１表面のシート抵抗を充分下げること
ができ、この基板１の表面近傍に反転層１０を形成する
ことができ、且つ反転層１０の直列抵抗が下がることが
分かる。したがって、電子引付層８の電荷密度は、少な
くとも３×１０11ｃｍ-2必要である。FIG. 2 shows the relationship between the charge density of the electron attracting layer 8 and the surface potential of the silicon substrate 1. Note that FIG.
Silicon substrate is 1.5 × boron as acceptor
It contains 10 16 . As is evident in FIG.
When the charge density of the electron attracting layer 8 is 1 × 10 11 cm −2 , the surface potential of the silicon substrate 1 rises rapidly, and the electron attracting layer 8
When the charge density becomes 3 × 10 11 cm −2 or more, the surface potential becomes 0.75 V. Even if the charge density further increases, the rate of increase of the surface potential becomes slow. That is,
If the charge density of the electron attracting layer 8 is 3 × 10 11 cm −2 or more, the sheet resistance on the surface of the silicon substrate 1 can be sufficiently reduced, and the inversion layer 10 can be formed near the surface of the substrate 1. It can be seen that the series resistance of the inversion layer 10 is reduced. Therefore, the charge density of the electron attracting layer 8 needs to be at least 3 × 10 11 cm −2 .
【００１１】図３に、電子引付層８の電荷密度と太陽電
池素子１の変換効率との関係を示す。なお、図３中、○
線はシリコン基板１の比抵抗が１Ωｃｍの場合、△線は
同じく１０Ωｃｍの場合、□線は同じく１００Ωｃｍの
場合であり、スルーホール２部分による入射光損失とシ
ート抵抗による損失は加味されていない。図３で明らか
なように、電子引付層８の電荷密度が２×１０12ｃｍ-2
のときに変換効率は最も高く、それ以後電子引付層８の
電荷密度が増加するにつれて反転層１０は深く形成さ
れ、太陽電池素子の変換効率は徐々に低下し、電子引付
層８の電荷密度が２×１０13ｃｍ-2以上になると変換効
率は２０％を切ってしまう。したがって、電子引付層８
の電荷密度は、多くても２×１０13ｃｍ-2としなければ
ならない。FIG. 3 shows the relationship between the charge density of the electron attracting layer 8 and the conversion efficiency of the solar cell element 1. Note that in FIG.
The line indicates the case where the specific resistance of the silicon substrate 1 is 1 Ωcm, the line 同 じ く indicates the case where the specific resistance is also 10 Ωcm, and the line □ indicates the case where the specific resistance is also 100 Ωcm. The incident light loss due to the through hole 2 and the loss due to the sheet resistance are not taken into account. As apparent from FIG. 3, the charge density of the electron attracting layer 8 is 2 × 10 12 cm −2.
In this case, the conversion efficiency is the highest, and thereafter, as the charge density of the electron attracting layer 8 increases, the inversion layer 10 is formed deeper, the conversion efficiency of the solar cell element gradually decreases, and the charge of the electron attracting layer 8 decreases. When the density exceeds 2 × 10 13 cm −2 , the conversion efficiency drops below 20%. Therefore, the electron attracting layer 8
Must be at most 2 × 10 13 cm −2 .
【００１２】上述のような電子引付層８は、例えばシラ
ンガス（ＳｉＨ4 ）とアンモニアガス（ＮＨ3 ）を用い
たプラズマＣＶＤ法などで形成される。この場合、基板
温度を例えば４００℃に設定して、シランガスとアンモ
ニアガスの流量比（ＳｉＨ4 ／ＮＨ3 ）を例えば０．１
４〜０．５９などに設定して厚み８００Å程度に形成す
る。The above-described electron attracting layer 8 is formed by, for example, a plasma CVD method using silane gas (SiH 4 ) and ammonia gas (NH 3 ). In this case, the substrate temperature is set to, for example, 400 ° C., and the flow ratio (SiH 4 / NH 3 ) of the silane gas to the ammonia gas is set to, for example, 0.1.
The thickness is set to about 800.degree.
【００１３】図４に電子引付層８の電荷密度が２×１０
13ｃｍ-2のときの、スルーホール２の孔径と変換効率の
関係を示す。なお、図４中、黒丸線は孔間ピッチが２０
μｍ、白丸線は孔間ピッチが５０μｍ、黒三角線は孔間
ピッチが１００μｍ、黒四角線は孔間ピッチが１５０μ
ｍ、白四角線は孔間ピッチが２００μｍ、白六角線は孔
間ピッチが３００μｍである。図５に、電子引付層８の
電荷密度が２×１０12ｃｍ-2のときのスルーホール２の
孔径と変換効率の関係を示す。なお、孔間ピッチとは、
スルーホール２の中心から隣接するスルーホール２の中
心までの間隔をいう。図４および図５で明らかなよう
に、孔径が５０μｍ以下で孔間ピッチが２００μｍ以下
であれば、変換効率が２０％以上になる。特に、孔径が
１０μｍで孔間ピッチが５０μｍの場合は最適である。
孔径が５０μｍ以上の場合、および孔間ピッチが２００
μｍ以上の場合は、変換効率は２０％以上にはならな
い。なお、孔径が５μｍ以下で孔間ピッチが１０μｍ以
下のスルーホール２を形成することは、実際的な問題と
して製造技術上の困難が伴う。したがって、スルーホー
ル２の孔径は５〜５０μｍで孔間ピッチは１０〜２００
μｍに設定しなければならない。FIG. 4 shows that the charge density of the electron attracting layer 8 is 2 × 10
The relationship between the diameter of the through hole 2 and the conversion efficiency at 13 cm -2 is shown. In FIG. 4, the black circles indicate a pitch between holes of 20.
μm, the white circle line has a hole pitch of 50 μm, the black triangle line has a hole pitch of 100 μm, and the black square line has a hole pitch of 150 μm.
m, the white square line has a hole pitch of 200 μm, and the white hexagonal line has a hole pitch of 300 μm. FIG. 5 shows the relationship between the hole diameter of the through hole 2 and the conversion efficiency when the charge density of the electron attracting layer 8 is 2 × 10 12 cm −2 . The pitch between holes is
The distance from the center of the through hole 2 to the center of the adjacent through hole 2. As is clear from FIGS. 4 and 5, when the hole diameter is 50 μm or less and the pitch between the holes is 200 μm or less, the conversion efficiency becomes 20% or more. In particular, when the hole diameter is 10 μm and the pitch between the holes is 50 μm, it is optimal.
When the hole diameter is 50 μm or more, and when the pitch between the holes is 200
In the case of μm or more, the conversion efficiency does not become 20% or more. Forming the through-holes 2 having a hole diameter of 5 μm or less and a hole pitch of 10 μm or less involves difficulties in manufacturing technology as a practical problem. Therefore, the hole diameter of the through hole 2 is 5 to 50 μm, and the pitch between the holes is 10 to 200 μm.
It must be set to μm.
【００１４】上述のようなスルーホール２は、ＹＡＧレ
ーザーあるいはフッ硝酸溶液を用いたエッチングなどに
よって形成することができる。The above-described through hole 2 can be formed by etching using a YAG laser or a hydrofluoric / nitric acid solution.
【００１５】[0015]
【発明の効果】以上のように、本発明に係る太陽電池素
子によれば、ｐ型単結晶シリコン基板に複数のスルーホ
ールを設け、このシリコン基板裏面側のスルーホール近
傍にｎ+ 領域を設け、このｎ+ 領域の近傍にｐ+ 領域を
設け、このｐ+ 領域部に正電極を設け、前記ｎ+ 領域部
に負電極を設け、前記シリコン基板の表面側とスルーホ
ール部の表面にパシベーション層、電子引付層、および
反射防止層を順次設けた太陽電池素子において、前記電
子引付層の電荷密度が３×１０11〜２×１０13ｃｍ-2で
あり、且つ前記スルーホールの孔径が５〜５０μｍで孔
間ピッチが１０〜２００μｍであることから、シリコン
基板表面の表面ポテンシャルが向上してシリコン基板の
表面に形成される反転層の直列抵抗を下げることができ
るとともに、反転層をシリコン基板の表面近傍に形成し
て変換効率を高めることができ、さらに集光面積の低下
に伴う変換効率の低下も防止でき、高効率の太陽電池素
子が得られる。As described above, according to the solar cell element of the present invention, a plurality of through holes are provided in a p-type single crystal silicon substrate, and an n + region is provided in the vicinity of the through hole on the back side of the silicon substrate. A p + region is provided in the vicinity of the n + region, a positive electrode is provided in the p + region, a negative electrode is provided in the n + region, and a passivation is provided on the surface side of the silicon substrate and the surface of the through hole. Layer, an electron attracting layer, and an antireflection layer, the charge density of the electron attracting layer is 3 × 10 11 to 2 × 10 13 cm −2 , and the hole diameter of the through hole is Is 5 to 50 μm and the pitch between holes is 10 to 200 μm, so that the surface potential of the silicon substrate surface is improved and the series resistance of the inversion layer formed on the surface of the silicon substrate can be reduced. Formed near the surface of the silicon substrate can be enhanced conversion efficiency, further can be prevented reduction in conversion efficiency due to the decrease of the light collecting area, high efficiency solar cell element can be obtained.
【図１】太陽電池素子の構造を示す図である。FIG. 1 is a diagram showing a structure of a solar cell element.
【図２】電子引付層の電荷密度とシリコン基板の表面ポ
テンシャルとの関係を示す図である。FIG. 2 is a diagram showing a relationship between a charge density of an electron attracting layer and a surface potential of a silicon substrate.
【図３】電子引付層の電荷密度と太陽電池素子の変換効
率との関係を示す図である。FIG. 3 is a diagram showing the relationship between the charge density of an electron attracting layer and the conversion efficiency of a solar cell element.
【図４】電子引付層の電荷密度が２×１０13ｃｍ-2のと
きのスルーホールの孔径と変換効率の関係を示す図であ
る。FIG. 4 is a diagram showing a relationship between a hole diameter of a through hole and a conversion efficiency when the charge density of the electron attracting layer is 2 × 10 13 cm −2 .
【図５】電子引付層の電荷密度が２×１０12ｃｍ-2のと
きのスルーホールの孔径と変換効率の関係を示す図であ
る。FIG. 5 is a diagram showing a relationship between a hole diameter of a through hole and a conversion efficiency when the charge density of the electron attracting layer is 2 × 10 12 cm −2 .
１・・・ｐ型単結晶シリコン基板、２・・・スルーホー
ル、３・・・ｎ+領域、４・・・ｐ+ 領域、５・・・正
電極、６・・・負電極、７・・・パシベーッション層、
８・・・電子引付層、９・・・反射防止層。DESCRIPTION OF SYMBOLS 1 ... p-type single crystal silicon substrate, 2 ... through hole, 3 ... n + region, 4 ... p + region, 5 ... positive electrode, 6 ... negative electrode, 7 ..Passivation layers,
8: electron attracting layer, 9: anti-reflection layer.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/04 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 31/04
Claims (1)
ホールを設け、このシリコン基板裏面側のスルーホール
近傍にｎ+ 領域を設け、このｎ+ 領域の近傍にｐ+ 領域
を設け、このｐ+ 領域部に正電極を設け、前記ｎ+ 領域
部に負電極を設け、前記シリコン基板の表面側とスルー
ホール部の表面にパシベーション層、電子引付層、およ
び反射防止層を順次設けた太陽電池素子において、前記
電子引付層の電荷密度が３×１０11〜２×１０13ｃｍ-2
であり、且つ前記スルーホールの孔径が５〜５０μｍで
孔間ピッチが１０〜２００μｍであることを特徴とする
太陽電池素子。A plurality of through holes are provided in a p-type single crystal silicon substrate, an n + region is provided in the vicinity of the through hole on the back side of the silicon substrate, a p + region is provided in the vicinity of the n + region, A positive electrode is provided in the + region portion, a negative electrode is provided in the n + region portion, and a passivation layer, an electron attracting layer, and an antireflection layer are sequentially provided on the surface side of the silicon substrate and the surface of the through hole portion. In the battery element, the charge density of the electron attracting layer is 3 × 10 11 to 2 × 10 13 cm −2.
And a hole diameter of the through holes is 5 to 50 μm and a pitch between the holes is 10 to 200 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3239139A JP2931451B2 (en) | 1991-09-19 | 1991-09-19 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3239139A JP2931451B2 (en) | 1991-09-19 | 1991-09-19 | Solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0582811A JPH0582811A (en) | 1993-04-02 |
| JP2931451B2 true JP2931451B2 (en) | 1999-08-09 |
Family
ID=17040349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3239139A Expired - Fee Related JP2931451B2 (en) | 1991-09-19 | 1991-09-19 | Solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2931451B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
| JP5172783B2 (en) * | 2009-06-18 | 2013-03-27 | シャープ株式会社 | Solar cell with wiring sheet and solar cell module |
| CN102484151A (en) | 2009-09-28 | 2012-05-30 | 京瓷株式会社 | Solar cell element and method of manufacture thereof |
-
1991
- 1991-09-19 JP JP3239139A patent/JP2931451B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582811A (en) | 1993-04-02 |
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