JP2927044B2 - Semiconductor laser device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device in which a laser beam emitting surface is covered with a resin, and a method of manufacturing the same.

[0002]

2. Description of the Related Art FIG. 9 is a schematic diagram showing a partial exfoliation for explaining the shape and configuration of a conventional semiconductor laser device. In FIG. 9, the semiconductor laser device has a chip 1 of a lead frame 2
The lead wire 5 is connected to the lead frame 2 b from the chip 1 and the photodiode 4 on the sub mount 3, respectively, and is molded with an epoxy resin 6. .

A chip 1 of this semiconductor laser device has a pair of cleavage planes on opposite surfaces forming an optical resonator.
A dielectric multilayer film such as Al ₂ O ₃ or SiO _{2 is applied} to prevent the cleavage plane from deteriorating and to control the reflectance. FIG. 10 shows this state. FIG. 10 is a schematic cross-sectional view of the periphery of the chip 1 as viewed from the side. Dielectric multilayer films 7 are respectively applied to two cleavage planes of the chip 1, and the whole is covered with an epoxy resin 6. The arrow indicates the emission direction of the laser light.

The reflectivity of the two cleavage planes of the chip 1 greatly affects device characteristics such as threshold current, differential quantum efficiency, and intensity noise, and is controlled according to the application of the device. For example, in a high light output type laser device, the laser light can be efficiently extracted from the front surface by increasing the rear surface reflectance to approximately 90% and decreasing the front surface reflectance of the light emitting surface to approximately 10%.

[0005] The reflectivity of the dielectric multilayer film 7 is a low refractive index A
l_TwoO_Three(Refractive index: 1.65) or SiO_Two(Refractive index:
1.50) and amorphous Si having a high refractive index (refractive index: 3.
4) and TiO_Two(Refractive index: 2.2) for each oscillation wavelength
(Λ) is alternately laminated with a film thickness of 1/4 to be variable
You. For example, Al_TwoO_ThreeAnd TiO_TwoTo make a multilayer film,
When a reflectance of about 60% is obtained, the film thickness is λ / 4 in all cases.
Al_TwoO_Three, TiO_Two, Al _TwoO_Three, TiO_TwoThis
Layered in this order, or as a final layer,_TwoO
_ThreeStack. At this time, the dielectric multilayer film 7 has a thickness of about 0.5 μm.
Degree. Also, the chip 1 may be covered with an epoxy resin 6.
This improves reflectivity controllability and reduces costs.
Can be.

On the other hand, there is an attempt to grow a semiconductor thin film of about 0.1 to 0.5 μm as a protective film on a pair of cleavage planes of the chip 1. For example, a high resistance Al _0.5 Ga _0.5 As is formed on a cleavage plane (110 plane) of a GaAs / AlGaAs laser.
Is epitaxially grown to improve the destruction level due to light absorption of the emitted laser light.

Attempts to control the reflectivity of a semiconductor multilayer film have been made with a distributed reflection type surface emitting laser device.
For example, the one reported by Kawashima et al. As the lecture number zp-2c-13 at the 35th Lecture Meeting on Applied Physics (Spring 1989) is Al _0.1 Ga having a refractive index of 3.6.
A high reflectance of 90% or more is obtained by stacking 25 pairs of _0.9 As and AlAs having a refractive index of 2.9 at a film thickness of １ ／ wavelength of the laser beam to form a multilayer film.

[0008]

As described above, the semiconductor laser device in which the dielectric multilayer film 7 is formed on the cleavage surface of the chip 1 and molded with the epoxy resin 6 has a laser beam emission spot diameter of 2 μm × 4 μm. When the device is operated continuously with a laser light output of 5 mW, the portion of the epoxy resin 6 adjacent to the laser light emission spot is damaged in several hundred hours, and the emitted laser light is scattered by this damage,
There is a problem that the light emission efficiency of the element is reduced. The damage of the epoxy resin 6 due to the laser beam is caused by an excessive power density of the laser beam. Therefore, in order to reduce the power density of the laser beam with respect to the epoxy resin 6, the diameter of the light emitting spot must be increased or Alternatively, the distance between the end face of the chip 1 and the epoxy resin 6 may be increased. However, although the enlargement of the light emitting spot diameter is achieved by enlarging the oscillation region, it is not preferable in that the single mode oscillation cannot be maintained and the operating current increases. Therefore, it is desired to reduce the power density of the laser beam by increasing the distance between the end face of the chip 1 and the epoxy resin 6.

In order to increase the distance between the end surface of the chip 1 and the epoxy resin 6, a semiconductor multilayer film is epitaxially grown on the cleavage surface of the chip 1 to form a thick window layer.
Molding with a resin is performed by first epitaxially growing a semiconductor laminated film on a substrate, cleaving after forming double-sided electrodes, rearranging chips, and then forming a window layer. At this time, the epitaxial growth temperature is as high as 500 to 800 ° C. Therefore, there is also a problem that the electrode is deteriorated.

Further, there is a problem in the epoxy resin 6 itself for molding the semiconductor laser device. As far as the epoxy resin 6 alone is concerned, this is greatly deteriorated by the laser beam.
FIG. 11 shows the results of a deterioration test of the mold resin, and is a graph showing the relationship between the time and the operating current when the element is aged at 600 ° C. The operating current rapidly increases in a short time. This indicates that the epoxy resin 6 as the mold resin has been degraded by the laser beam. Therefore, as a protective resin between the laser light emitting surface of the chip 1 and the epoxy resin 6 for sealing, the surface including the laser light emitting surface of the chip 1 has a structure in which an ultraviolet curable acrylic resin or a silicon resin is buffer-coated. Although there are elements, ultraviolet curable acrylic resin is deteriorated by light, and silicone resin has poor adhesion, and neither is sufficient.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to increase the thickness of a dielectric multilayer film formed on an end face of a chip or to increase the thickness between a dielectric multilayer film and an epoxy resin. A semiconductor laser device that does not damage the epoxy resin by laser light, and a thick window layer that is transparent to laser light is epitaxially grown on the cleavage plane of the chip, and the epoxy resin is similarly damaged by the laser light. Structure of semiconductor laser element which is not subjected to heat, method of manufacturing the same, laser light emitting surface and epoxy resin 6
An object of the present invention is to provide a semiconductor laser element which does not deteriorate by laser light by selecting an appropriate protective resin for an element having a protective resin between the two.

[0012]

In order to solve the above-mentioned problems, a semiconductor laser device according to the present invention has a dielectric multilayer film formed between a laser light emitting surface of a chip and an epoxy resin having a thickness of 10 μm. In addition, a part of the dielectric multilayer film is replaced with silicon resin, or the thickness of the window layer for epitaxial growth between the laser light emitting surface and the epoxy resin is set to approximately 20 μm. It can be formed as a semiconductor multilayer film having a thickness of の of the wavelength and having a different composition. Further, in forming this semiconductor laser device, SiO ₂ is deposited on the laminated film constituting the device.
After the film is deposited, a step of epitaxially growing a window layer on the cleavage plane is included.

Further, by interposing a polyene / polythiol-based resin as a protective resin between the laser light emitting surface of the chip and the epoxy resin, a structure in which the epoxy resin is not damaged by the laser light can be obtained. .

[0014]

According to the semiconductor laser device of the present invention, since the distance between the laser light emitting surface and the epoxy resin is increased as described above, the light density in the epoxy resin becomes very low, and the resin is damaged by the laser light. Does not occur, and the efficiency of the device does not decrease. Further, when a window layer transparent to laser light is epitaxially grown on the laser light emitting surface, an SiO ₂ film is applied to protect the electrodes so that the electrodes are not in direct contact with each other. Without changing the quality of the electrodes and without lowering the yield of the device.

On the other hand, in an element having a structure in which a protective resin is provided between the laser light emitting surface and the epoxy resin, the polyene / polythiol resin used as the protective resin does not absorb laser light. No damage.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on embodiments. Here, the present invention is applied to a GaAs / AlG having an oscillation wavelength of 780 nm.
Al ₂ O ₃ and T
The case of coating a dielectric multilayer film of iO ₂ will be described.

First, the manufacturing method will be described. First,
MOCVD (metal organic chemical vapor deposition) on GaAs substrate
Then, a GaAs / AlGaAs double heterostructure is formed, and after a photo process and an electrode forming process, the wafer is cleaved into a bar shape having a width of about 260 μm and a length of about 10 mm. Next, a pair of opposite cleavage surfaces of the bar is coated with a dielectric multilayer film. The deposition of the dielectric multilayer film is performed using a vacuum deposition method, and Al ₂ O ₃ is deposited at a deposition temperature of 400 ° C.
And deposition rate 5 Å / sec, TiO ₂ is deposited temperature 200 ° C.,
Assuming a deposition rate of 0.4 / sec, Al ₂ O ₃ , TiO ₂ ,
After alternately laminating Al ₂ O ₃ and TiO _{2 in} the order of λ / 4 in thickness, 40 layers of Al ₂ O ₃ are deposited with a thickness of λ / 2, and this is performed on the two cleavage planes under the same conditions. . Next, the bar is separated into a number of chips having a length of 320 μm, and the chips are die-bonded on a lead frame with the substrate side up, and the substrate is wire-bonded. Finally, mold around the chip with epoxy resin,
A semiconductor laser device having a structure similar to that shown in FIG. 9 can be obtained.

FIG. 1 is a schematic sectional view of the periphery of the chip 1 of the semiconductor laser device of the present invention obtained as described above, as viewed from the side. Figure 1 Figure 10 differs from the can, Al ₂
Between the first dielectric multilayer film 7a made of O ₃ and TiO ₂ and the epoxy resin 6, 40 of Al ₂ O ₃ having a thickness of λ / 2
This means that the second dielectric multilayer film 7b is formed. FIG. 2 is a diagram showing the relationship between the reflectivity and the total thickness of the dielectric multilayer films 7a and 7b.

FIG. 3 shows that when the laser light output of the semiconductor laser device of the present invention is 5 mW,
FIG. 3 is a diagram showing the relationship between the distance between the optical fibers, that is, the total thickness of the dielectric multilayer films 7a and 7b, and the light density in the epoxy resin 6. FIG.
By increasing the distance between the laser light emitting surface and the epoxy resin 6 as described above, the light density can be reduced significantly.
m, the light density is reduced to about 1/5.

The 50 semiconductor laser elements of the present invention having the structure shown in FIG.
As a result of conducting a current test at mW, even after a lapse of several thousand hours, the resin was not damaged by the laser beam unlike the conventional device, and the efficiency of the device did not decrease.

In the above embodiment, Al ₂ O _{3 having} a film thickness of λ / 2 is used.
The thickness of the dielectric multi-layer film is increased by using, but this is to improve the controllability of the reflectance. If the thickness is 10 μm or more, the same effect can be obtained by using another material. it can. For example, Al ₂ O ₃ and TiO ₂ are alternately formed on the two cleavage planes of the laser bar at a film thickness of λ / 4 in the same manner as described above.
Al ₂ O ₃ having a thickness of λ / 2 is further deposited on the substrate.
This bar is cut into chips 1 each having a length of 320 μm, and die-bonded on the lead frame 2a.
Apply to the extent. Next, the periphery of the chip 1 is molded with epoxy resin. The cross section around the chip 1 at that time is shown in FIG.
It can be considered that the second dielectric multilayer film 7b is replaced with a silicone resin. The reflectivity characteristics are also the same as those in FIG. 2, and the same energization test as described above yields the same result. Even after a lapse of several thousand hours, the efficiency of the element does not decrease due to the resin damage of the laser beam.

Next, GaAs / A having an oscillation wavelength of 780 nm
A case where a window layer is formed on a chip of an lGaAs-based semiconductor laser device and molded with epoxy resin will be described.

FIGS. 4 (a) to 4 (i) are process diagrams showing a method of manufacturing this device, and FIGS. 4 (a), 4 (b) and 4 (e) are sectional views, and FIGS. (F), (g),
(H) and (i) are shown in perspective views. First, n-type Ga
Atmospheric pressure MOCVD on As substrate [crystal orientation (100)] 8
GaAs / AlGaAs at a growth temperature of 800 ° C.
The stacked film 9 having the s double hetero structure is formed, and a current confinement structure (not shown) is formed by a photo process [FIG.
(A)].

Next, an AuGe / Au n-electrode 1 is provided on the substrate 8 side.
0, after forming an AuZn / Au p-electrode 11 on the side of the laminated film 9 by a sputtering method, a 0.5 μm-thick SiO ₂ film 12 is deposited on the entire surface of both electrodes 10 and 11 by a sputtering method [FIG. 4 (b)].

The wafer is cleaved into a bar having a width of about 260 μm and a length of about 10 mm [FIG. 4 (c)].

Next, the cleavage planes of these bars are moved up and down,
Rearrange so that the iO ₂ film 12 side is adjacent. The reason why the SiO ₂ film 12 is deposited in the step (b) is that the electrodes 10 and 11 are not brought into direct contact with each other during the realignment, and the electrodes are not contacted during the epitaxial growth of the window layer in the next step. This is to prevent alteration due to [Fig. 4 (d)].

After that, using the atmospheric pressure MOCVD method again,
Undoped Al _0.3 G at growth temperature 800 ° C on upper and lower cleavage planes
The window layers 13 of the a _0.7 As film are each epitaxially grown to a length of 20 μm. At this time, the molar ratio between the group V element and the group III element is set to 150 to increase the resistance. Even with another composition, a high resistance can be obtained by appropriately selecting the ratio between the group V element and the group III element. Note that the crystal orientation of the cleavage plane is the (100) plane, but growth similar to that of the (100) plane can be realized. [FIG. 4 (e)].

Next, the SiO ₂ film 12 is separated at adjacent portions of the SiO ₂ film 12 and returned to individual bar shapes, and then the SiO ₂ film 12 is removed [FIG. 4 (f)].

The bar is separated into a number of chips having a length of 320 μm [FIG. 4 (g)].

The chip 1 is die-bonded on the lead frame 2a with the substrate side up, and the substrate side and the lead frame 2b are wire-bonded [FIG.
(H)].

Finally, the periphery of the chip is molded with the epoxy resin 6 (FIG. 4I).

FIG. 5 is a schematic cross-sectional view of the periphery of the chip 1 of the semiconductor laser device of the present invention thus obtained, as viewed from the side. FIG. 5 shows a window layer 13 formed on the cleavage plane of the chip 1,
This shows a structure in which a dielectric multilayer film 7c whose surface is coated is covered with an epoxy resin 6, and a thick window layer 13 is provided between the chip 1 and the dielectric multilayer film 7 in FIG. Can be regarded as intervening.

Next, a case where the window layer is formed of a semiconductor multilayer film will be described. In the present invention, the window layer 13 of the undoped Al _0.3 Ga _0.7 As film having a thickness of 20 μm can be formed of a semiconductor multilayer film, and FIG. 6 shows the configuration. FIG. 6 is a schematic cross-sectional view of the periphery of the chip 1 as viewed from the side.
Window layer 13 of _0.3 Ga _0.7 As film and window layer 1 of AlAs film
By laminating four pairs of the layers 3a alternately with a thickness of 1/4 of the oscillation wavelength λ, and further stacking the window layer 13a of the AlAs film with a thickness of 25λ, the reflectivity is 60% on both the front and rear surfaces and the thickness is about 20%.
A reflective film having a thickness of μm was formed.

The method of manufacturing a semiconductor laser device having a chip having such a structure is basically the same as that described above, and a description thereof is omitted, but the window layer 13 and the window layer 13a are omitted.
The growth temperature of each layer is 800 ° C., and the V / III ratio is 1
50 and 180, which are high resistance. Thus, by providing the window layer of about 20 μm, the thickness of 0.5 mm
The optical density is reduced to almost half as compared with a semiconductor laser device having a normal dielectric multilayer film of μm. It is also possible to appropriately determine the combination of the composition of these two layers and the number of layers to obtain an arbitrary reflectance.

As a result of conducting an energization test of 50 semiconductor laser devices of the present invention having the structure shown in FIGS. 5 and 6 at a laser light output of 50 mW in an environment of 50 ° C., even after a lapse of several thousand hours, There was no decrease in the efficiency of the device without causing damage to the resin by the laser beam as in the conventional device.
Further, the deterioration of the chip due to the addition of the window layer does not occur.

As described above, the distance of the dielectric multilayer film formed between the laser light emitting surface and the sealing resin can be increased to prevent the resin from being damaged. A semiconductor laser device in which a resin is buffer-coated and covered with a mold resin will be described.

In the present invention, as the protective resin, a radical polymer, in particular, a monomer of each of polyene and polythiol,
A photocurable resin composition comprising an oligomer mixture and a photopolymerization initiator is applied to the surface of the chip 1 to improve light resistance. For example, 20 parts by weight of diethylene glycol dimethacrylate, 30 parts by weight of trimethylolpropane triacrylate, 50 parts by weight of trimethylolpropane trismercaptopropionate, and 1 part by weight of benzophenone are mixed. After applying on the chip to cover it, apply ultraviolet light to 1000
mJ / cm ^{2 is} irradiated and cured, and the whole is sealed with a transparent epoxy resin. FIG. 7 is a schematic cross-sectional view showing a part of the periphery of the chip 1 of the semiconductor laser device.
Indicates a protective resin. FIG. 8 shows the characteristics of this element together with the already-shown diagram of FIG. FIG.
As can be seen from the graph, the degradation starts in a short time without the protective resin 14, whereas the semiconductor laser device of the present invention including the protective resin 14 maintains the stability for a long time without degradation. .

Similarly, 20 parts by weight of polypropylene glycol monomethacrylate, 30 parts by weight of ethylene glycol (meth) allyl ether, 50 parts by weight of triglycol dimercaptan and 1 part by weight of benzoin ethyl ether were mixed, and the resulting resin was mixed with chips. After applying on 1,
The same results as described above can be obtained by irradiating with 1000 mJ / cm ^{2 of} ultraviolet rays and curing the resin, and molding the whole with a transparent epoxy resin.

Further, in the present invention, a commercially available material may be used for the above-mentioned UV-curable polyene / polythiol resin, for example, product number OP-1 manufactured by Denki Kagaku Kogyo Co., Ltd.
505, the product number OP-1030M, the product number BY300 manufactured by Asahi Denka Kogyo Co., and the product number T-502 manufactured by Showa Polymer Co., Ltd., etc. These can be coated on the chip 1 by a dip method.

As the polyene used in the present invention, di (meth) allyl phthalate, tri (meth)
Allyl isocyanurate, trimethylolpropane di (meth) allyl ether, pentaerythritol tri (meth) allyl ether, (poly) propylene glycol di (meth) allyl ether, neopentyl glycol modified trimethylolpropane diacrylate, bisphenol A dimethacrylate , Ethylene oxide modified phosphate diacrylate, 1,4-butanediol diacrylate, 1,4-butanediol di (meth) acrylate, pentaerythritol tetra (meth) acrylate, dialylidene pentaerythritol and various polyfunctional There are acrylates.

On the other hand, the polythiol used in the present invention may be diglycol dimethyl captan, triglycol dimethyl captan, tetraglycol dimethyl captan, thioglycol dimethyl captan, thiotriglycol dimethyl captan, tris- ( There are various polythiol oligomers such as (mercaptopropyl) -isocyanurate, (poly) ethylene glycol dimethylcaptopropionate, tris- (2-hydroxyethyl) -isocyanurate-tris-β- / mercaptopropionate, and the like.

Examples of the photopolymerization initiator include, in addition to those described above, benzyl, 2,4-diethylthioxanthone, 1-hydroxycyclohexylphenyl ketone, 1- (4-isopropylphenyl) -2-hydroxy-2-methylpropane -1-one and the like.

Table 1 shows the results of comparison of the UV-curable polyene / polythiol resin used as the protective resin for the semiconductor laser device with other resins. In Table 1, ○ indicates good and x indicates bad.

[0044]

[Table 1]

[0045]

The distance between the laser light emitting surface of the semiconductor laser device chip and the epoxy resin for molding the chip is small, and the resin is damaged by the laser light having a high power density, which causes a reduction in the efficiency of the device. However, in the present invention, as described in the embodiment, Al ₂ O ₃ and TiO ₂ are formed of λ / 4 as a dielectric multilayer film formed on the cleavage plane of the chip.
After 2 are alternately laminated thickness of which, in addition of Al ₂ O ₃ lambda
A multilayer film having a thickness of / 2 or a silicon resin is applied to increase the distance between the laser beam emitting surface and the mold resin to 10 μm or more, or an undoped Al _0.3 Ga _0.7 As film as a window layer formed on the cleavage surface of the chip. Such as using a semiconductor multilayer film, coating a dielectric multilayer film on it,
Alternatively, as a semiconductor multilayer film in which films of different compositions are alternately stacked, the thickness of each is increased to approximately 20 μm.
The power density of the laser beam is greatly reduced, and the reliability of the device can be improved without damaging the molding resin. Further, when the window layer is epitaxially grown, a SiO ₂ film is deposited on the electrode. Since this is protected, the electrodes do not change at all, and the reliability and yield of the element are improved. On the other hand, for a semiconductor laser device having a structure in which a protective resin is formed between the laser light emitting surface of the chip and the mold resin, by using an ultraviolet-curable polyene / polythiol resin having no light absorption as the protective resin, This prevents deterioration of the mold resin due to the laser beam, and stabilizes the yield and characteristics of the element.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view around a chip of a semiconductor laser device of the present invention on which a dielectric multilayer film is formed.

FIG. 2 is a diagram showing the relationship between the total thickness of the dielectric multilayer film used in the present invention and the reflectance.

FIG. 3 is a diagram showing the relationship between the total thickness of the dielectric multilayer film used in the present invention and the light density.

FIGS. 4A to 4I are manufacturing process diagrams of a semiconductor laser device of the present invention in which a window layer is formed.

FIG. 5 is a schematic cross-sectional view around a chip of a semiconductor laser device of the present invention in which a window layer and a dielectric multilayer film are formed.

FIG. 6 is a schematic cross-sectional view around a chip of a semiconductor laser device of the present invention having a window layer in which semiconductor films having different compositions are alternately stacked.

FIG. 7 is a schematic sectional view around a chip of a semiconductor laser device of the present invention having a protective resin.

FIG. 8 is a diagram showing the relationship between time and operating current of a semiconductor laser device of the present invention having a protective resin in comparison with a conventional device.

FIG. 9 is a schematic diagram of a partially peeled semiconductor laser device.

FIG. 10 is a schematic cross-sectional view around a chip of a conventional semiconductor laser device.

FIG. 11 is a diagram showing the relationship between time and operating current of a conventional semiconductor laser device having a protective resin.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Chip 2a Lead frame 2b Lead frame 3 Submount 4 Photodiode 5 Lead wire 6 Epoxy resin 7 Dielectric multilayer 7a First dielectric multilayer 7b Second dielectric multilayer 7c Dielectric multilayer 8 Substrate 9 Lamination Film 10 n-electrode 11 p-electrode 12 SiO ₂ film 13 window layer 13 a window layer 14 protective resin

Claims (8)

(57) [Claims] 1. A semiconductor laser device having a chip in which a dielectric multilayer film is formed on a laser light emitting surface and covered with a resin, wherein a vertical distance between the laser light emitting surface and the resin is 10 mm.
A semiconductor laser device having a thickness of at least μm. 2. The semiconductor laser device according to claim 1, wherein a first dielectric multilayer film is formed on the laser light emitting surface between the laser light emitting surface and the resin, and the first dielectric multilayer film is formed on the first dielectric multilayer film. And a second dielectric multilayer film formed thicker than the above. 3. The semiconductor laser device according to claim 1, wherein a dielectric multilayer film and a silicon resin are formed between the laser light emitting surface and the resin from the laser light emitting surface side. 4. A semiconductor laser device having a chip formed by forming a semiconductor layer epitaxially grown on a laser light emitting surface and coating with a resin, wherein a vertical distance between the laser light emitting surface and the resin is set to approximately 20 μm. Characteristic semiconductor laser device. 5. The semiconductor laser device according to claim 4, further comprising a window layer formed on the laser light emitting surface between the laser light emitting surface and the resin, and a dielectric multilayer film formed on the window layer. A semiconductor laser device characterized by the above-mentioned. 6. A semiconductor laser device according to claim 4, wherein one of the window layers has a thickness of 1/4 of the wavelength of the laser beam and is formed as a multilayer film having a different composition. Laser element. 7. A semiconductor laser device according to claim 4, wherein:
In manufacturing the device, a current confinement structure is formed on one main surface of the substrate.
After epitaxially growing a laminated film with
An electrode is formed on the surface, and SiO_TwoDeposit film
The whole is cleaved into several bars, and then these bars
The pair of cleavage planes of _TwoAdjacent membranes
A plurality of bars are arranged at the same time, and a window layer is
After the axial growth, SiO_TwoSeparated at the contact surface of the membrane
Each bar has a specific bar
It is characterized by including a step of cutting into dimensions to make a chip.
Of manufacturing a semiconductor laser device. 8. A semiconductor laser device having a protective resin between a laser light emitting surface of a semiconductor chip and a sealing resin,
A semiconductor laser device using a polyene / polythiol resin as the protective resin.