JP2923851B2 - Microwave / millimeter wave oscillator - Google Patents
Microwave / millimeter wave oscillatorInfo
- Publication number
- JP2923851B2 JP2923851B2 JP9474596A JP9474596A JP2923851B2 JP 2923851 B2 JP2923851 B2 JP 2923851B2 JP 9474596 A JP9474596 A JP 9474596A JP 9474596 A JP9474596 A JP 9474596A JP 2923851 B2 JP2923851 B2 JP 2923851B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- dielectric resonator
- output
- microwave
- millimeter wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は誘電体共振器を用い
て発振を安定化させるマイクロ波・ミリ波発振器に関す
るものである。[0001] 1. Field of the Invention [0002] The present invention relates to a microwave / millimeter wave oscillator that stabilizes oscillation using a dielectric resonator.
【０００２】[0002]
【従来の技術】従来より、マイクロ波及びミリ波の発振
器等には、ＦＥＴやバイポーラトランジスタ等の３端子
能動素子を用い、該３端子にそれぞれ直列帰還回路、共
振回路及び出力整合回路が接続された直列帰還型の構成
がよく採用される。その具体的な回路例は、例えば図４
に示す構成となる。2. Description of the Related Art Conventionally, three-terminal active elements such as FETs and bipolar transistors have been used for microwave and millimeter-wave oscillators and the like, and a series feedback circuit, a resonance circuit and an output matching circuit are connected to the three terminals, respectively. A series feedback configuration is often employed. The specific circuit example is shown in FIG.
The configuration shown in FIG.
【０００３】すなわち、能動素子としてＦＥＴ(Field E
ffect Transistor) ２１を用い、ＦＥＴ２１のソースに
負性抵抗発生用の直列帰還回路２２が、ＦＥＴ２１のゲ
ートに共振回路２３が、ＦＥＴ２１のドレインに出力整
合回路２４が接続される。That is, an FET (Field E) is used as an active element.
The FET 21 has a source connected to a series feedback circuit 22 for generating negative resistance, a gate of the FET 21 connected to a resonance circuit 23, and a drain of the FET 21 connected to an output matching circuit 24.
【０００４】ここで、共振回路２３には、周波数の制御
用にバラクタ２５が接続されると共に、発振周波数の安
定化及び低雑音化のために伝送線路２６と結合させて誘
電体共振器２７が装荷される。尚、Ｖｃはバラクタ２５
の制御電圧である。Here, a varactor 25 is connected to the resonance circuit 23 for frequency control, and a dielectric resonator 27 is coupled to a transmission line 26 for stabilizing the oscillation frequency and reducing noise. Loaded. Vc is the varactor 25
Is the control voltage.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記の
直列帰還型発振器の場合、バラクタの直列抵抗が大きく
Ｑがあまり高くないと、誘電体共振器を用いても発振周
波数が充分に安定化せず、従って位相雑音を低く抑える
ことができないという問題が生じていた。However, in the case of the above-described series feedback oscillator, if the series resistance of the varactor is large and Q is not so high, the oscillation frequency cannot be sufficiently stabilized even with the use of a dielectric resonator. Therefore, there has been a problem that the phase noise cannot be suppressed low.
【０００６】本発明は、このような誘電体共振器を装荷
した直列帰還型マイクロ波・ミリ波発振器の欠点を解消
するものである。The present invention solves the disadvantages of the series feedback type microwave / millimeter wave oscillator loaded with such a dielectric resonator.
【０００７】[0007]
【課題を解決するための手段】本発明は上記に鑑みて成
されたもので、トランジスタを能動素子とし、該トラン
ジスタの３端子にそれぞれ直列帰還回路、誘電体共振器
との結合線路を含む共振回路及び出力整合回路を含む出
力回路が接続された上記誘電体共振器を有する直列帰還
型のマイクロ波・ミリ波発振器であって、上記誘電体共
振器は上記結合線路と上記出力回路との両方に結合する
結合するマイクロ波・ミリ波発振器を提供するものであ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above, and has been made in consideration of the above-mentioned problems. The present invention has a transistor as an active element, and has three terminals each including a series feedback circuit and a coupling line with a dielectric resonator. A series feedback type microwave / millimeter wave oscillator having the dielectric resonator to which an output circuit including a circuit and an output matching circuit is connected, wherein the dielectric resonator includes both the coupling line and the output circuit. And a combined microwave / millimeter wave oscillator.
【０００８】また、本発明は、上記誘電体共振器と出力
回路との結合は出力整合回路よりも出力側の伝送線路と
の間でなされるマイクロ波・ミリ波発振器を提供するも
のである。Further, the present invention provides the above-mentioned dielectric resonator and an output
The connection with the circuit is connected to the transmission line on the output side of the output matching circuit.
The present invention is to provide a microwave / millimeter wave oscillator made between the above.
【０００９】[0009]
【発明の実施の形態】以下に、本発明を図面に基づいて
説明する。図１は、本発明の一実施形態におけるマイク
ロ波・ミリ波発振器を示す回路図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram showing a microwave / millimeter wave oscillator according to an embodiment of the present invention.
【００１０】図において、発振用の能動素子１はＮ−Ａ
ｌＧａＡｓ／ＩｎＧａＡｓヘテロ接合ＦＥＴであり、Ｆ
ＥＴのソースに負性抵抗発生用の直列帰還回路としての
ショートスタブ２が、ＦＥＴのゲートにバラクタ３を含
む共振回路４が、またＦＥＴのドレインに出力整合回路
５を含む出力回路６が接続される。In the figure, an active element 1 for oscillation is NA
1GaAs / InGaAs heterojunction FET, F
A short stub 2 as a series feedback circuit for generating a negative resistance is connected to the source of ET, a resonance circuit 4 including a varactor 3 is connected to the gate of the FET, and an output circuit 6 including an output matching circuit 5 is connected to the drain of the FET. You.
【００１１】ここでバラクタ３は能動素子１と同様なＮ
−ＡｌＧａＡｓ／ＩｎＧａＡｓヘテロ接合ＦＥＴのゲー
ト容量を用いるが、線形な周波数特性を有し、しかも直
列抵抗を低減させるために、特公平７−７０７３６号公
報に認められるように、上記ヘテロ接合ＦＥＴのドレイ
ンをキャパシタ７によってＲＦ (Radio Frequency)短絡
し、しかも上記ドレインに直流バイアス電圧Ｖdvを印加
できる構成としている。Here, the varactor 3 has the same N
The gate capacitance of an AlGaAs / InGaAs heterojunction FET is used. However, in order to have a linear frequency characteristic and to reduce the series resistance, as described in Japanese Patent Publication No. 7-70736, the drain of the heterojunction FET is drained. Is short-circuited by a capacitor 7 by RF (Radio Frequency), and a DC bias voltage Vdv can be applied to the drain.
【００１２】また、ゲートの共振回路４には、更に結合
線路８が設けられ、誘電体共振器９は、結合線路８に結
合すると共に、出力回路６にも結合するように装荷され
る。尚、１０はバイアス線のバイパスキャパシタ、１１
は直流遮断用のキャパシタである。Further, a coupling line 8 is further provided in the gate resonance circuit 4, and the dielectric resonator 9 is loaded so as to be coupled to the coupling line 8 and also to the output circuit 6. In addition, 10 is a bypass capacitor of the bias line, 11
Is a DC blocking capacitor.
【００１３】一方、バラクタ３の直列抵抗はドレインに
直流電圧を印加することによって低減されているが、そ
れでもゲート容量の０．１ｐＦに対して数Ωあり、従っ
てバラクタ３のＱは６０ＧＨｚにおいて１０程度以下と
小さく、共振回路４全体のＱを低下させてしまう。On the other hand, although the series resistance of the varactor 3 is reduced by applying a DC voltage to the drain, the varactor 3 still has several Ω for a gate capacitance of 0.1 pF, and therefore the Q of the varactor 3 is about 10 at 60 GHz. Therefore, the Q of the entire resonance circuit 4 is reduced.
【００１４】従って、従来のように共振回路４の結合線
路８にのみ誘電体共振器９を結合させても位相雑音の抑
制は充分ではない。そこで、本実施形態では、誘電体共
振器９を共振回路４の結合線路８のみでなく出力回路６
にも結合させて、発振周波数の安定化及び位相雑音の抑
制を計るものである。Therefore, even if the dielectric resonator 9 is coupled only to the coupling line 8 of the resonance circuit 4 as in the prior art, the suppression of the phase noise is not sufficient. Therefore, in the present embodiment, the dielectric resonator 9 is connected not only to the coupling line 8 of the resonance circuit 4 but also to the output circuit 6.
To stabilize the oscillation frequency and suppress the phase noise.
【００１５】[0015]
【実施例】以下に本発明の第一の実施形態における具体
的な実施例を示す。図２は第一の実施例を示す要部斜視
図であり、３０ＧHz帯のモノリシック電圧制御発振器で
ある。EXAMPLES Specific examples of the first embodiment of the present invention will be described below. FIG. 2 is a perspective view showing a main part of the first embodiment, which is a monolithic voltage controlled oscillator in a 30 GHz band.
【００１６】先ず、ＧａＡｓ基板１２上の０．１５μｍ
ゲートＡｌＧａＡｓ／ＩｎＧａＡｓヘテロ接合ＦＥＴを
発振能動素子１及びバラクタ３として用い、直列帰還用
ショートスタブ２、バラクタ３及び結合線路８を含む共
振回路４、並びにショートスタブを用いた出力整合回路
５を含む出力回路６を有するモノリシック半導体集積回
路（以下ＭＭＩＣと記す）を製作した。First, 0.15 μm on the GaAs substrate 12
An output including a gate AlGaAs / InGaAs heterojunction FET as an oscillation active element 1 and a varactor 3, a resonance circuit 4 including a series feedback short stub 2, a varactor 3, and a coupling line 8, and an output matching circuit 5 using a short stub. A monolithic semiconductor integrated circuit (hereinafter, referred to as MMIC) having the circuit 6 was manufactured.
【００１７】ここで、ＧａＡｓ基板１２の厚さは０．０
４ｍｍ、Ａｕメッキ放熱体６の厚さは０．０４ｍｍであ
る。そして、このＭＭＩＣチップを図示しないＡｕメッ
キケースの底部に半田を用いて固定している。Here, the thickness of the GaAs substrate 12 is 0.0
4 mm, and the thickness of the Au-plated heat radiator 6 is 0.04 mm. The MMIC chip is fixed to the bottom of an Au plating case (not shown) using solder.
【００１８】一方、誘電体共振器９は、Ｂａ（Ｍｇ，Ｔ
ａ）Ｏ3 のセラミックから成る直径２．２ｍｍ、高さ
１．４ｍｍの円柱型であり、この誘電体共振器９の端が
結合線路８及び出力回路６と結合するよう、図２に示す
とおり誘電体共振器９を設置及び固定して発振器を製作
した。On the other hand, the dielectric resonator 9 is composed of Ba (Mg, T
a) It is a cylindrical type made of O 3 ceramic and having a diameter of 2.2 mm and a height of 1.4 mm. As shown in FIG. The oscillator was manufactured by installing and fixing the dielectric resonator 9.
【００１９】この実施例における発振器の位相雑音は、
発振周波数のピークから１００ｋHz離れた周波数におい
て−９６ｄＢｃ／Hzとなり、従来の共振回路の結合線路
にだけ誘電体共振器が結合した発振器よりも６ｄＢ改善
された。The phase noise of the oscillator in this embodiment is:
At a frequency 100 kHz away from the peak of the oscillation frequency, the frequency becomes -96 dBc / Hz, which is 6 dB better than that of the oscillator in which the dielectric resonator is coupled only to the coupling line of the conventional resonance circuit.
【００２０】尚、本実施例では、図２に示すように誘電
体共振器９は出力回路６の伝送線路に重ならず、ごく近
接した位置に配設する、すなわち、粗結合にする方が低
位相雑音になる結果が得られた。また、出力回路６にお
ける誘電体共振器９の結合位置は、出力整合回路５より
も後段の単なる出力の伝送線路の位置が良好な結果が得
られた。In this embodiment, as shown in FIG. 2, it is better to arrange the dielectric resonator 9 so as not to overlap with the transmission line of the output circuit 6 and at a position very close to the transmission line, that is, to make a rough coupling. The result was low phase noise. In addition, as for the coupling position of the dielectric resonator 9 in the output circuit 6, the result that the position of the mere output transmission line downstream of the output matching circuit 5 was good was obtained.
【００２１】次に、本実施形態の第二の実施例を示す。
図３は第二の実施例を示す要部斜視図であり、６０ＧHz
帯のモノリシック電圧制御発振器である。この実施例の
回路構成は第一の実施例と同様であるが、出力回路６を
共振回路４の結合線路８と並行となるように構成してい
る。Next, a second example of this embodiment will be described.
FIG. 3 is a perspective view of a main part showing the second embodiment,
It is a monolithic voltage controlled oscillator of the band. The circuit configuration of this embodiment is the same as that of the first embodiment, but the output circuit 6 is configured to be parallel to the coupling line 8 of the resonance circuit 4.
【００２２】また、誘電体共振器９は直径１．３ｍｍ、
高さ０．５５ｍｍの円柱型であり、この誘電体共振器９
は結合線路８を跨ぎ、出力回路６にも結合するように配
設されている。すなわち、誘電体共振器９は結合線路８
と密結合している。The dielectric resonator 9 has a diameter of 1.3 mm,
The dielectric resonator 9 has a cylindrical shape with a height of 0.55 mm.
Are disposed so as to straddle the coupling line 8 and also couple to the output circuit 6. That is, the dielectric resonator 9 is connected to the coupling line 8.
Is tightly coupled with
【００２３】この状態において、従来のように誘電体共
振器９が出力回路６と結合しない場合よりも、位相雑音
は１０ｄＢ以上、環境温度の変化に対する発振周波数の
変動は数分の１に改善された。In this state, the phase noise is 10 dB or more, and the variation of the oscillation frequency with respect to the change of the environmental temperature is improved to a fraction of that in the conventional case where the dielectric resonator 9 is not coupled to the output circuit 6. Was.
【００２４】尚、第一の実施例と同様に、誘電体共振器
９が出力回路６よりも共振回路４の結合線路８と密結合
するほうが良好な特性が得られる理由として、誘電体共
振器９を含めた共振回路４が発振周波数を決めるので、
これに影響を与えないために誘電体共振器９が出力回路
６と粗結合である方がよいと考えられる。As in the first embodiment, the reason why the dielectric resonator 9 is more closely coupled to the coupling line 8 of the resonance circuit 4 than the output circuit 6 is to obtain better characteristics is as follows. Since the resonance circuit 4 including 9 determines the oscillation frequency,
It is considered that the dielectric resonator 9 should be loosely coupled to the output circuit 6 in order not to affect this.
【００２５】また、誘電体共振器９を出力回路６の出力
整合回路５以後の伝送線路に結合させた場合と出力整合
回路５に結合させた場合とを比較すると、位相雑音及び
発振出力共に前者の方が良好であった。これは、発振条
件が出力整合回路５も含めて決まることから、これに影
響を与えない出力回路６の単なる伝送線路に誘電体共振
器９が結合する方がよいものと考えられる。Also, comparing the case where the dielectric resonator 9 is coupled to the transmission line after the output matching circuit 5 of the output circuit 6 and the case where the dielectric resonator 9 is coupled to the output matching circuit 5, both the phase noise and the oscillation output are the former. Was better. Since the oscillation condition is determined including the output matching circuit 5, it is considered that it is better to couple the dielectric resonator 9 to a simple transmission line of the output circuit 6 which does not affect the condition.
【００２６】以上、本発明を実施形態に基づいて説明し
たが、本発明は上記した実施形態に限定されるものでは
なく、特許請求の範囲に記載した構成を変更しない限
り、どのようにでも実施できる。例えば、上記各実施形
態においては、誘電体共振器との結合線路として、マイ
クロストリップ線路を使用したが、本発明はこれに限定
されることはなく、コプレーナ線路等、種々のものが使
用できる。As described above, the present invention has been described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and may be implemented in any manner unless the configuration described in the claims is changed. it can. For example, in each of the above embodiments, a microstrip line is used as a coupling line with a dielectric resonator. However, the present invention is not limited to this, and various types such as a coplanar line can be used.
【００２７】また、発振器の回路構成として、ＦＥＴの
ソースに帰還用エレメントが、ゲートに共振回路が、ド
レインに出力回路が接続された場合について説明した
が、本発明はこれに限定されることなく、トランジスタ
の３端子にこれらが別々に接続された任意の組み合わせ
からなる直列帰還型の発振回路に適応できる。Further, as the circuit configuration of the oscillator, the case where the feedback element is connected to the source of the FET, the resonance circuit is connected to the gate, and the output circuit is connected to the drain, but the present invention is not limited to this. The present invention can be applied to a series feedback type oscillation circuit composed of an arbitrary combination in which these are separately connected to three terminals of a transistor.
【００２８】[0028]
【発明の効果】以上述べたように、本発明におけるマイ
クロ波・ミリ波発振器においては、誘電体共振器との結
合度を、上記結合線路よりも上記出力回路において粗と
なるように構成することにより位相雑音を低レベルに抑
制することができ、しかも発振周波数の高安定化が可能
となり、通信システムへの応用拡大に大きく寄与するこ
とが可能である等、多大な効果を奏する。As described above, in the microwave / millimeter wave oscillator according to the present invention , the connection with the dielectric resonator is provided.
The degree of coarseness in the output circuit than in the coupling line.
With such a configuration, the phase noise can be suppressed to a low level, and the oscillation frequency can be highly stabilized, which can greatly contribute to the expansion of application to a communication system. To play.
【図１】本発明の一実施形態におけるマイクロ波・ミリ
波発振器の回路図である。FIG. 1 is a circuit diagram of a microwave / millimeter wave oscillator according to an embodiment of the present invention.
【図２】本発明の第一の実施例におけるマイクロ波・ミ
リ波発振器を示す要部斜視図である。FIG. 2 is a perspective view of a main part showing a microwave / millimeter wave oscillator according to the first embodiment of the present invention.
【図３】本発明の第二の実施例におけるマイクロ波・ミ
リ波発振器を示す要部斜視図である。FIG. 3 is a perspective view showing a main part of a microwave / millimeter wave oscillator according to a second embodiment of the present invention.
【図４】従来のマイクロ波・ミリ波発振器の回路図であ
る。FIG. 4 is a circuit diagram of a conventional microwave / millimeter wave oscillator.
１ 発振能動素子 ２ 帰還用ショートスタブ ３ バラクタ ４ 共振回路 ５ 出力整合回路 ６ 出力回路 ７、１１ キャパシタ ８ 結合線路 ９ 誘電体共振器 １０ バイパスキャパシタ １２ ＧａＡｓ基板 １３ 放熱体 REFERENCE SIGNS LIST 1 oscillation active element 2 feedback short stub 3 varactor 4 resonance circuit 5 output matching circuit 6 output circuit 7, 11 capacitor 8 coupling line 9 dielectric resonator 10 bypass capacitor 12 GaAs substrate 13 radiator
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−172412（ＪＰ，Ａ) 特開 昭61−177005（ＪＰ，Ａ) 特開 平２−183606（ＪＰ，Ａ) 特開 平６−29740（ＪＰ，Ａ) 電子情報通信学会1995年総合大会講演 論文集 Ｃ−61 (58)調査した分野(Int.Cl.6，ＤＢ名) H03B 5/18 H01P 7/10 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-61-172412 (JP, A) JP-A-61-177005 (JP, A) JP-A-2-183606 (JP, A) JP-A-6-177606 29740 (JP, A) Proceedings of the 1995 IEICE General Conference C-61 (58) Fields studied (Int. Cl. 6 , DB name) H03B 5/18 H01P 7/10
Claims (4)
ジスタの３端子にそれぞれ直列帰還回路、誘電体共振器
との結合線路を含む共振回路及び出力整合回路を含む出
力回路が接続された上記誘電体共振器を有する直列帰還
型のマイクロ波・ミリ波発振器であって、 上記誘電体共振器は上記結合線路と上記出力回路との両
方に結合することを特徴とするマイクロ波・ミリ波発振
器。1. A dielectric resonance apparatus comprising: a transistor as an active element; and a terminal connected to a series feedback circuit, a resonance circuit including a coupling line to a dielectric resonator, and an output circuit including an output matching circuit, respectively. A microwave / millimeter wave oscillator of a series feedback type having a resonator, wherein the dielectric resonator is coupled to both the coupling line and the output circuit.
出力整合回路よりも出力側の伝送線路との間でなされる
ことを特徴とする請求項１に記載のマイクロ波・ミリ波
発振器。2. The coupling between the dielectric resonator and an output circuit is as follows.
Made between the transmission line on the output side of the output matching circuit
The microwave / millimeter wave oscillator according to claim 1, wherein:
合線路よりも上記出力回路において粗にとなるように構
成したことを特徴とする請求項１または２の何れかに記
載のマイクロ波・ミリ波発振器。3. The microcircuit according to claim 1, wherein the degree of coupling with the dielectric resonator is made coarser in the output circuit than in the coupling line. Wave / millimeter wave oscillator.
部として構成することを特徴とする請求項１に記載のマ
イクロ波・ミリ波発振器。 4. The resonance circuit according to claim 1, wherein the varactor is a circuit element.
2. The device according to claim 1, wherein the device is configured as a unit.
Microwave and millimeter wave oscillators.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474596A JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9474596A JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09260945A JPH09260945A (en) | 1997-10-03 |
| JP2923851B2 true JP2923851B2 (en) | 1999-07-26 |
Family
ID=14118672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9474596A Expired - Lifetime JP2923851B2 (en) | 1996-03-26 | 1996-03-26 | Microwave / millimeter wave oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2923851B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3196750B2 (en) | 1999-01-13 | 2001-08-06 | 日本電気株式会社 | High frequency oscillator |
| JP2002246842A (en) | 2001-02-22 | 2002-08-30 | Alps Electric Co Ltd | Microwave oscillator |
| JPWO2002071594A1 (en) * | 2001-03-07 | 2004-07-02 | 株式会社日立製作所 | Small oscillation device and manufacturing method thereof |
| CN110289814B (en) * | 2019-07-16 | 2021-11-30 | 电子科技大学 | Low-phase-noise oscillator |
-
1996
- 1996-03-26 JP JP9474596A patent/JP2923851B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| 電子情報通信学会１９９５年総合大会講演論文集 Ｃ−６１ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09260945A (en) | 1997-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ishihara et al. | A highly stabilized GaAs FET oscillator using a dielectric resonator feedback circuit in 9-14 GHz | |
| EP0738040B1 (en) | Monolithic HBT active tuneable band-pass filter | |
| US4149127A (en) | Dielectric resonator stabilized micro-strip oscillators | |
| US5942950A (en) | Varactor tuned strip line resonator and VCO using same | |
| US6259332B1 (en) | Microwave oscillator for obtaining the low phase noise characteristic | |
| US4605909A (en) | Dual gate FET oscillator mixer | |
| US6066997A (en) | Frequency multiplier with fundamental wave reflection | |
| US4539530A (en) | Transistorized microwave oscillator of oscillation frequency multiplying type | |
| JPS62252206A (en) | Frequency multiplying voltage control oscillator | |
| JP2923851B2 (en) | Microwave / millimeter wave oscillator | |
| US5339047A (en) | X-band bipolar junction transistor amplifier | |
| US6208214B1 (en) | Multifunction high frequency integrated circuit structure | |
| JPH0629740A (en) | Oscillator stabilized by conduction panar resonator | |
| US4599581A (en) | Temperature stabilizing microwave oscillator circuit | |
| US6778031B2 (en) | High-frequency circuit device using slot line and communication apparatus having high frequency circuit device | |
| Wenger et al. | Ka-and W-band PM-HFET DROs | |
| JPH1093348A (en) | Voltage controlled oscillator | |
| JPH03192801A (en) | Monolithic microwave integrated circuit device | |
| JP2001352204A (en) | Circuit element using transmission line, electronic circuit using the same element and line, and electronic device using the same | |
| JP2972014B2 (en) | Voltage controlled oscillator and tuning circuit | |
| JPH11274853A (en) | High frequency integrated circuit device | |
| JPS6040726B2 (en) | Ultra high frequency oscillation circuit | |
| Matsuzuka et al. | A 19 GHz low phase noise HFET VCO MMIC | |
| JPH10112612A (en) | High frequency oscillation circuit | |
| Dieudonné | AbStl'3Ct The development of an hybrid dielectric resonator oscillator (DRO) based on a MMIC |