JP2920783B2 - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JP2920783B2
JP2920783B2 JP2329991A JP32999190A JP2920783B2 JP 2920783 B2 JP2920783 B2 JP 2920783B2 JP 2329991 A JP2329991 A JP 2329991A JP 32999190 A JP32999190 A JP 32999190A JP 2920783 B2 JP2920783 B2 JP 2920783B2
Authority
JP
Japan
Prior art keywords
wire
bonding
gold
bonding wire
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2329991A
Other languages
Japanese (ja)
Other versions
JPH04206645A (en
Inventor
寿一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
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Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2329991A priority Critical patent/JP2920783B2/en
Publication of JPH04206645A publication Critical patent/JPH04206645A/en
Application granted granted Critical
Publication of JP2920783B2 publication Critical patent/JP2920783B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/01204—4N purity grades, i.e. 99.99%

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体素子上の電極と外部リードとを接続
するために用いるボンデイングワイヤーに関する。Description: TECHNICAL FIELD The present invention relates to a bonding wire used to connect an electrode on a semiconductor element to an external lead.

［従来の技術］ IC,LSIなどの半導体素子の電極と外部リードを接続す
るため0.015〜0.1mmの範囲の直径を有するボンデイング
ワイヤーが用いられている。ボンデイングワイヤーに
は、 （１） 大気中もしくは10％程度の水素ガスを含む窒素
気流中でワイヤーの先端を加熱溶融した場合、酸化被膜
の無い真球状のボールが形成される、 （２） 超音波熱圧着方式によるボンデイングを行った
場合、ボンデイングワイヤーと外部リードとの間で、そ
れぞれ良好な接合状態が得られる、 （３） 樹脂封入を行なった場合に、隣合うボンデイン
グワイヤー同志の接触が起こらない、すなわち樹脂の流
動抵抗によってボンデイングワイヤーが変形しにくい、 （４） 長期間保存した場合にも、ボンデイングワイヤ
ーと半導体素子の電極及びボンデイングワイヤーと外部
リードとの間の接合が劣化しない、 等の特性が要求される。そのためボンデイングワイヤー
として、従来は純度99.99重量％以上の高純度の金また
は銅の地金に0.01重量％未満の微量な合金元素を添加し
た線材が用いられてきた。[Prior Art] A bonding wire having a diameter in the range of 0.015 to 0.1 mm is used to connect electrodes of semiconductor elements such as ICs and LSIs to external leads. (1) When the tip of the wire is heated and melted in the air or in a nitrogen stream containing about 10% hydrogen gas, a spherical ball without an oxide film is formed. (2) Ultrasonic wave When bonding is performed by a thermocompression bonding method, a good bonding state can be obtained between the bonding wire and the external lead. (3) When resin is sealed, adjacent bonding wires do not come into contact with each other. That is, the bonding wire is not easily deformed due to the flow resistance of the resin. (4) Even if the bonding wire is stored for a long period of time, the bonding between the bonding wire and the electrode of the semiconductor element and the bonding between the bonding wire and the external lead are not deteriorated. Is required. Therefore, as a bonding wire, conventionally, a wire obtained by adding a trace alloy element of less than 0.01% by weight to a high-purity gold or copper base metal having a purity of 99.99% by weight or more has been used.

しかしながら近年、半導体デバイスの多ピン化に伴い
ボンデイングワイヤー間隔の狭ピッチ化及びボンデイン
グ距離の長距離化が進行してきており、そのため従来の
ボンデイングワイヤーでは樹脂封入する時に、樹脂の流
動抵抗によりボンデイングワイヤーが変形し、ボンデイ
ングワイヤー同志の接触による不良が頻発化し、半導体
デバイス製造上の大きな問題となってきている。However, in recent years, with the increase in the number of pins in semiconductor devices, narrower pitches of bonding wire intervals and longer bonding distances have been progressing, and therefore, when the conventional bonding wire is sealed with resin, the bonding wire is formed by flow resistance of the resin. It is deformed, and the failure due to the contact of the bonding wires frequently occurs, which has become a major problem in semiconductor device manufacturing.

［発明が解決しようとする課題］ 本発明の目的は、半導体素子を樹脂封入する際にボン
デイングワイヤー同志の接触による不良が起りにくく、
多ピン半導体デバイス用として好適なボンデイングワイ
ヤーを提供することにある。[Problems to be Solved by the Invention] An object of the present invention is to prevent defects caused by contact between bonding wires when a semiconductor element is sealed with a resin,
An object of the present invention is to provide a bonding wire suitable for a multi-pin semiconductor device.

［課題を解決するための手段］ 上記目的を達成するため本発明の第１の実施態様は、
その外側が金で覆われた金合金の芯材が、銅５〜30重量
％、残部金及び不可避不純物からなる組成を有するボン
ディングワイヤーを特徴とするものである。[Means for Solving the Problems] To achieve the above object, a first embodiment of the present invention provides:
The bonding wire is characterized in that a core material of a gold alloy whose outside is covered with gold has a composition of 5 to 30% by weight of copper, a balance of gold and unavoidable impurities.

また本発明の第２の実施態様は、その外側が金で覆わ
れた金合金の芯材が、銅５〜30重量％、銀0.1〜20重量
％、残部金及び不可避不純物からなる組成を有するボン
ディングワイヤーを特徴とするものである。According to the second embodiment of the present invention, the gold alloy core material whose outer surface is covered with gold has a composition of 5 to 30% by weight of copper, 0.1 to 20% by weight of silver, balance gold and unavoidable impurities. It features a bonding wire.

［作 用］ 本発明において、金合金の芯材を有し、その外側が金
よりなるのは、高強度な金合金線を芯材としてボンデイ
ングワイヤーの強度を向上させることにより、酸化被膜
の無い真球状のボールを形成したり外部リードとの間で
良好な接合状態を得る等のボンデイングワイヤーに要求
される特性を満足させながら、樹脂封入時の樹脂の流動
抵抗によるボンデイングワイヤーの変形によりボンデイ
ングワイヤー同志が接触するのを防止するためである。[Operation] In the present invention, the reason why the present invention has a gold alloy core material and the outside of which is made of gold is that a high-strength gold alloy wire is used as a core material to improve the strength of the bonding wire so that there is no oxide film. While satisfying the characteristics required for a bonding wire, such as forming a true spherical ball and obtaining a good bonding state with external leads, the bonding wire is deformed by the flow resistance of the resin at the time of resin encapsulation, and the bonding wire is deformed. This is to prevent contact between comrades.

金合金の芯材の直径がボンデイングワイヤーの直径の
10％未満では芯材による強度の向上の効果が不充分で、
樹脂封入時の流動抵抗によるボンデイングワイヤーの変
形の防止が充分でなく、90％を超えると従来の条件では
ボンデイング出来なくなるので、金合金の芯材の直径が
ボンデイングワイヤーの直径の10％以上、90％以下であ
ることが好ましい。The diameter of the gold alloy core is the same as the diameter of the bonding wire.
If it is less than 10%, the effect of improving the strength by the core material is insufficient,
Deformation of the bonding wire due to flow resistance during resin encapsulation is not sufficient, and if it exceeds 90%, it will not be possible to bond under conventional conditions, so the diameter of the gold alloy core material must be 10% or more of the diameter of the bonding wire. % Is preferable.

金合金の芯材の外側を構成する金は、酸化被膜の無い
真球状のボールを形成したり外部リードとの間で良好な
接合状態を得る等のボンデイングワイヤーに要求される
諸特性を満足するために99.99重量％以上の高純度であ
ることが好ましい。ただし、全量が0.01重量％未満であ
れば金の特性を制御する目的で、特定の元素を添加して
も良い。Gold constituting the outside of the core material of the gold alloy satisfies various characteristics required for a bonding wire, such as forming a spherical ball without an oxide film and obtaining a good bonding state with an external lead. Therefore, it is preferable that the high purity is 99.99% by weight or more. However, if the total amount is less than 0.01% by weight, a specific element may be added for the purpose of controlling the characteristics of gold.

芯材の金合金は、強度が高いこと、および、ボンデイ
ングワイヤーに要求される諸特性を劣化させる元素（た
とえば、Mg,Cr,Ca等の酸化し易い元素）を多量に含まな
いことが望ましい。It is desirable that the gold alloy of the core material has high strength and does not contain a large amount of an element (for example, an easily oxidizable element such as Mg, Cr, or Ca) that deteriorates various characteristics required for the bonding wire.

本発明の実施態様の一つとしては、金合金として銅５
〜30重量％、残部金及び不可避不純物からなる組成を有
するものであり、この金合金は、Cu3Auが析出して強度
が高まる合金である。銅が５重量％未満では上記の効果
が不充分であり、銅が30重量％を超えるとボール形状が
不良となったり、ボンデイング接合性が悪化するので、
銅が５〜30重量％、残部金及び不可避不純物からなる組
成を有することが好ましい。In one embodiment of the present invention, copper 5 is used as the gold alloy.
This gold alloy has a composition of up to 30% by weight, the balance being gold and unavoidable impurities. This gold alloy is an alloy in which Cu 3 Au is precipitated to increase the strength. If the amount of copper is less than 5% by weight, the above effect is insufficient. If the amount of copper is more than 30% by weight, the ball shape becomes poor or the bonding property deteriorates.
Preferably, copper has a composition of 5 to 30% by weight, the balance being gold and unavoidable impurities.

また、本発明の実施態様の一つとしては、金合金とし
て銅５〜30重量％、銀0.1〜20重量％、残部金及び不可
避不純物からなる組成を有するものであり、この金合金
はCu3Au,AgAu又はこれらの混合物が析出して強度が高ま
る合金である。銅が５重量％未満又は銀が0.1重量％未
満では上記の効果が不充分であり、銅が30重量％を超え
たり、銀が20重量％を超える組成ではボール形状が不良
となったり、ボンディング接合性が悪化したり、経時変
化するので、銅が５〜30重量％、銀が0.1〜20重量％、
残部金及び不可避不純物なる組成を有することが好まし
い。Further, as one embodiment of the present invention, 5 to 30 wt% copper as gold alloy, silver 0.1 to 20 wt%, those having a composition the balance being gold and unavoidable impurities, the gold alloy Cu 3 Au, AgAu, or an alloy in which a mixture thereof precipitates to increase the strength. If the content of copper is less than 5% by weight or the content of silver is less than 0.1% by weight, the above effects are insufficient. If the composition exceeds 30% by weight of copper or the composition exceeds 20% by weight of silver, the ball shape becomes poor, Since the bondability deteriorates or changes over time, 5 to 30% by weight of copper, 0.1 to 20% by weight of silver,
It is preferable to have a composition of the remaining gold and inevitable impurities.

本発明のような２重構造のボンデイングワイヤーを製
造するには、金合金の細線に金めっきと伸線加工とを交
互に施す方法、金合金と金からなる２重構造のビレット
を熱間押し出し加工後、伸線加工する方法等を用いれば
良い。In order to manufacture a bonding wire having a double structure as in the present invention, a method of alternately performing gold plating and wire drawing on a thin wire of a gold alloy, and hot extruding a double structure billet made of a gold alloy and gold. After the processing, a method of drawing or the like may be used.

本発明により、ボンデイングワイヤーに要求される特
性を劣化させることなく、樹脂封入時の樹脂の流動抵抗
によるボンデイングワイヤーの変形の為にボンデイング
ワイヤー同志が接触する不良が起りにくい多ピン半導体
デバイス用として好適なボンデイングワイヤーが得られ
る。According to the present invention, it is suitable for a multi-pin semiconductor device in which a defect in which the bonding wires come into contact with each other due to deformation of the bonding wires due to the flow resistance of the resin at the time of resin encapsulation is less likely to occur without deteriorating the characteristics required for the bonding wires. A good bonding wire can be obtained.

［実施例］ 純度99.999重量％の高純度金、電気銅及び純度99.99
重量％の銀を用い、第１表に示した組成の金合金を溶解
鋳造し、次に溝ロール加工を施した後、伸線加工と600
℃での中間熱処理を繰り返し施すことにより直径0.03mm
の金合金を得た。この合金線を芯材とし、脱脂、酸洗等
の前処理をした後中性シアン浴を用いて金メッキを施
し、焼鈍、伸線加工を繰り返し施すことにより、第２表
に示すような直径0.03mmの金合金／金の２重構造のボン
デイングワイヤーを得た。[Example] High-purity gold of 99.999% by weight, electrolytic copper and purity of 99.99%
A gold alloy having the composition shown in Table 1 was melt-cast using silver by weight and then subjected to groove roll processing.
0.03mm in diameter by repeatedly applying intermediate heat treatment at ℃
Was obtained. This alloy wire was used as a core material, subjected to pretreatment such as degreasing and pickling, then subjected to gold plating using a neutral cyanide bath, and repeatedly subjected to annealing and wire drawing to obtain a diameter of 0.03 as shown in Table 2. Thus, a bonding wire having a double structure of a gold alloy / gold having a thickness of 2 mm was obtained.

このように作成された試料の評価の為に、引張り強度
は室温に於ける破断伸び率が６％になるように熱処理し
た後、引張り試験により求めた。正常なボールが形成さ
れるかどうかは、ワイヤボンデイングマシーンを用い、
10％の水素ガスを含む窒素ガス気流中でボールを形成
し、その外観を観察することにより判定した。ボンデイ
ング接合性すなわちボンデイングワイヤーと半導体素子
の電極及び外部リードとの間の接合状況は、ワイヤーボ
ンデイングマシーンを用い超音波熱圧着方式により半導
体素子及びリードフレームとボンデイングしたボンデイ
ングワイヤーをフックで引掛けて引張り、接合部がはく
離する強度を求めた。また、上記と同様な方法でワイヤ
ーボンデイングした試料を200℃で100時間保持した後の
ボンデイング接合性についての値も測定し、その経時変
化を求めた。樹脂封入時のワイヤーの接触による不良の
起りやすさは、上記と同様な方法で4mmの間隔にワイヤ
ーボンデイングした試料についてモールディングマシー
ン（トランスファーモールド型）によりエポキシ樹脂
（住友ベークライト製、EME−6300）を金型温度180℃、
射出圧100kg/cm2の条件でモールドした時のワイヤー流
れ量をＸ線透過装置により撮影したＸ線写真から求め、
その値から評価した。なお、ワイヤー流れ量は第１図に
示した様にエポキシ樹脂をモールドした時のワイヤーの
変形量で示した。For evaluation of the sample thus prepared, the tensile strength was determined by a tensile test after heat treatment so that the elongation at break at room temperature was 6%. To determine whether a normal ball is formed, use a wire bonding machine.
Balls were formed in a nitrogen gas stream containing 10% hydrogen gas, and the appearance was determined by observing the appearance. Bonding bondability, that is, the bonding condition between the bonding wire and the electrode of the semiconductor element and the external lead is determined by using a wire bonding machine and pulling the bonding wire bonded to the semiconductor element and the lead frame by a hook using an ultrasonic thermocompression bonding method. The strength at which the joint was peeled off was determined. Further, the value of the bondability after the wire bonded sample was held at 200 ° C. for 100 hours in the same manner as described above was also measured, and the change with time was determined. The likelihood of failure due to wire contact during resin encapsulation can be measured by using epoxy resin (Sumitomo Bakelite, EME-6300) with a molding machine (transfer mold type) on a wire-bonded sample at 4 mm intervals in the same manner as above. Mold temperature 180 ℃,
The amount of wire flow when molded under the conditions of injection pressure 100 kg / cm 2 was obtained from an X-ray photograph taken with an X-ray transmission device,
It evaluated from the value. The amount of wire flow was shown by the amount of deformation of the wire when the epoxy resin was molded as shown in FIG.

純度99.99重量％以上で第１表に示した組成の市販品
1,2についても同様に諸特性値を測定し第２表に示し
た。A commercial product with a purity of 99.99% by weight or more and the composition shown in Table 1.
Various characteristic values were similarly measured for 1 and 2, and are shown in Table 2.

第２表において、試験番号１〜10と市販品1,2のデー
タより本発明によるボンデイングワイヤーが従来のボン
デイングワイヤーよりも樹脂封入時のワイヤー流れ量が
小さく、従ってワイヤー同志の接触による不良が起りや
すさが小さくなっており、かつ、他の諸特性も良好であ
ることが判る。試験番号１〜10と11,12との比較によ
り、金合金の芯材の直径がボンデイングワイヤーの直径
の10％未満又は90％を超える値では、ワイヤー流れ量が
大きかったり、ボールの形状が不良で接合性も良くなっ
たりボンデイングワイヤーとしての特性が不良となるこ
とが判る。試験番号１〜5,10と13,14との比較より金合
金の芯材で銅が５重量％未満又は30重量％を超える値を
とる場合は、ワイヤー流れ量が大きかったり、ボール形
状が不良であったり、ボンデイング接合性が悪化するの
が判る。また、試験番号６〜９と15,市販品1,2との比較
により、金合金の芯材で銅が５重量％未満又は30重量％
を超える値、銀が0.1重量％未満又は20重量％を超える
値をとる場合は、ワイヤー流れ量が大きかったり、ボー
ル形状が不良であったり、ボンデイング接合性が悪かっ
たり、経時変化をすることが判る。In Table 2, the data of Test Nos. 1 to 10 and the data of commercial products 1 and 2 show that the bonding wire according to the present invention has a smaller amount of wire flow at the time of resin encapsulation than the conventional bonding wire. It can be seen that the ease is small and other properties are also good. According to the comparison between Test Nos. 1 to 10 and 11 and 12, when the diameter of the core material of the gold alloy is less than 10% or more than 90% of the diameter of the bonding wire, the wire flow rate is large or the ball shape is poor. It can be seen that the bonding property was improved and the characteristics as a bonding wire became poor. Compared to Test Nos. 1 to 5,10 and 13,14, if copper is less than 5 wt% or more than 30 wt% in the gold alloy core, the wire flow is large or the ball shape is poor It can be seen that the bonding bondability deteriorates. In comparison with Test Nos. 6 to 9 and 15, commercial products 1 and 2, copper was less than 5% by weight or 30% by weight in the core material of gold alloy.
If the value is more than 0.1% by weight or the value of silver is less than 0.1% by weight or more than 20% by weight, the wire flow rate may be large, the ball shape may be poor, the bonding property may be poor, or the aging may change. I understand.

なお、第２表において、ボール形状が真球状でボール
の表面に酸化被膜が全く観察されない場合を良、それ以
外を不良とした。また、芯材の直径をボンデイングワイ
ヤーの直径に対する百分率で示した。In Table 2, the case where the ball had a true spherical shape and no oxide film was observed on the surface of the ball was evaluated as good, and the other cases were evaluated as defective. Also, the diameter of the core material was shown as a percentage with respect to the diameter of the bonding wire.

［発明の効果］ 以上から明らかなように、本発明により半導体素子の
樹脂封入時のワイヤー同志の接触による不良が起りにく
い多ピン半導体デバイス用として好適なボンデイングワ
イヤーが得られる。 [Effects of the Invention] As is clear from the above, according to the present invention, it is possible to obtain a bonding wire suitable for a multi-pin semiconductor device in which a failure due to contact between wires during resin encapsulation of a semiconductor element hardly occurs.

【図面の簡単な説明】 第１図は、ワイヤー流れ量の定義を示す。図中、破線
は、ワイヤーボンデイング直後のワイヤーを真上から見
た時の位置を示して居り、実線は、エポキシ樹脂をモー
ルドした後のワイヤーを真上から見た位置を示して居
り、ワイヤー流れ量は両者のずれの最大値である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows the definition of the wire flow rate. In the figure, the broken line indicates the position of the wire immediately after wire bonding when viewed from directly above, and the solid line indicates the position of the wire after molding the epoxy resin viewed from directly above, and the wire flow The amount is the maximum value of the difference between the two.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】その外側が金で覆われた金合金の芯材が、
銅５〜30重量％、残部金及び不可避不純物からなる組成
を有することを特徴とするボンディングワイヤー。1. A gold alloy core material whose outside is covered with gold,
A bonding wire having a composition comprising 5 to 30% by weight of copper, a balance of gold and unavoidable impurities. 【請求項２】その外側が金で覆われた金合金の芯材が、
銅５〜30重量％、銀0.1〜20重量％、残部金及び不可避
不純物からなる組成を有することを特徴とするボンディ
ングワイヤー。2. A gold alloy core material whose outside is covered with gold,
A bonding wire having a composition of 5 to 30% by weight of copper, 0.1 to 20% by weight of silver, the balance of gold and inevitable impurities.
JP2329991A 1990-11-30 1990-11-30 Bonding wire Expired - Fee Related JP2920783B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2329991A JP2920783B2 (en) 1990-11-30 1990-11-30 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2329991A JP2920783B2 (en) 1990-11-30 1990-11-30 Bonding wire

Publications (2)

Publication Number Publication Date
JPH04206645A JPH04206645A (en) 1992-07-28
JP2920783B2 true JP2920783B2 (en) 1999-07-19

Family

ID=18227551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2329991A Expired - Fee Related JP2920783B2 (en) 1990-11-30 1990-11-30 Bonding wire

Country Status (1)

Country Link
JP (1) JP2920783B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4874922B2 (en) * 2007-01-18 2012-02-15 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor mounting

Also Published As

Publication number Publication date
JPH04206645A (en) 1992-07-28

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