JP2920539B2 - Vacuum processing equipment - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a vacuum processing apparatus such as a thermal CVD apparatus, a plasma CVD apparatus, an etching apparatus, and a sputtering apparatus.

(Prior Art) There are various conventional vacuum processing apparatuses, and FIG. 4 shows an example of a plasma CVD apparatus. In the figure,
The vacuum chamber 1 is provided with a gas inlet 2 and a vacuum exhaust port 3, and a flat cathode 4 and a similarly flat anode 5 are arranged in the vacuum chamber 1 so as to face each other in parallel. A high frequency power supply 6 is connected to the flat cathode 4, and a substrate 7 is placed on the flat anode 5.

Therefore, in the above apparatus, the gas introduced from the gas inlet 2 reacts with the substrate 7 by the action of the plasma generated by the discharge between the cathode 4 and the anode 5, and the substrate 7
A thin film is formed on the surface of the substrate.

(Problems to be Solved by the Invention) When the surface of a substrate on which a thin film is formed by reacting with a gas is subdivided into a large number of plane pieces ΔSi, the partial pressure of the reacting gas is reduced in all the plane pieces ΔSi. If the reaction conditions such as temperature are the same, a uniform thin film is formed on the surface of the substrate. Conversely, if the reaction conditions are different, a non-uniform thin film is formed on the surface of the substrate.

In the conventional vacuum processing apparatus, the gas introduced from the gas inlet 2 and the substrate 7 are actuated by the action of the plasma generated by the discharge between the cathode 4 and the anode 5 opposed in parallel as described above.
Reacts with each other to form a thin film on the surface of the substrate 7. However, when the gas introduced from the gas inlet 2 and the substrate 7 react with each other, an extra reaction that does not contribute to the formation of the thin film occurs. Products will also be generated. If this excess reaction product is constantly removed and fresh gas reacts with the substrate 7, the reaction conditions on all surfaces of the substrate 7 become the same,
Although a uniform thin film is formed on the surface of the substrate 7, the conventional apparatus cannot remove excess reaction products,
Since the partial pressure of the reacting gas varies depending on the position on the substrate 7, the reaction conditions on the surface of the substrate 7 differ,
There was a problem that a uniform thin film could not be formed on the surface of the substrate 7. In particular, this was remarkable when the surface area of the substrate 7 was increased.

The present invention solves the above-mentioned conventional problems, and forms a uniform thin film on the surface of the base slope by making the reaction conditions on all surfaces of the substrate the same, or makes the formed thin film uniformly fine. It is an object of the present invention to provide a vacuum processing apparatus capable of processing.

(Means for Solving the Problems) In order to achieve the above object, the invention according to claim 1 is
Form a thin film on the surface of the substrate placed in the vacuum chamber,
Alternatively, there is provided a vacuum processing apparatus for finely processing a thin film formed on a surface, wherein at least two or more gas ejection blades having a plurality of gas ejection ports formed on a surface facing the substrate are provided at an end of a rotating shaft. The rotary shaft is supported by the wall of the vacuum chamber, and the gas ejection blades are rotated together with the rotary shaft.

In the vacuum processing apparatus according to the first aspect, as in the second aspect, it is preferable that the number of gas ejection ports of the gas ejection blades increases as the distance from the center of the rotation shaft increases.

Further, in the vacuum processing apparatus according to any one of claims 1 and 2, as in the invention according to claim 3, the surface of the gas ejection blade facing the substrate is extended to the tip. It is preferred to spread according to.

(Function) In the present invention, the rotation of the gas ejection blade reduces the time that the gas ejection blade stays on the surface element ΔSi on the surface of the substrate as the distance from the center of the rotation axis decreases. Since the number of gas ejection ports is also increased as the distance from the center of the rotation axis increases, the amount of gas ejected from the gas ejection ports increases as the distance from the center of the rotation axis increases. Excessive reaction products that do not contribute to the formation of the generated thin film are constantly removed, and the amount of fresh gas supplied on the surface piece ΔSi on the surface of the substrate is constant regardless of the position on the substrate, The reaction conditions are the same on all surfaces of the substrate, and a uniform thin film is formed on the surface of the substrate, or the formed thin film is finely processed by uniform etching or the like.

(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.

FIG. 1 shows the overall configuration of a plasma CVD apparatus according to an embodiment of the present invention. In FIG. 1, a substrate 7 is placed on an anode 5 at a lower portion in a vacuum chamber 1. A rotatable rotating shaft 8 having a gas passage 8a therein is vertically supported via a bearing 9 on the upper wall of the vacuum chamber 1,
An end of the rotating shaft 8 in the vacuum chamber 1 is provided inside the rotating shaft 8.
A gas ejection blade 10 serving as a cathode having a gas ejection chamber 10 a having a gas passage 8 a is mounted so as to face the substrate 7. As shown in FIG. 2, the number of gas ejection blades 10 is two.
It is a sheet, and its shape expands toward the tip. A large number of gas ejection ports 10b are provided on the surface of the gas ejection blade 10 facing the substrate 7, and the gas ejection ports
From 0b, gas is jetted toward the substrate 7 in the vacuum chamber 1. As shown in FIG. 2, the number of gas outlets 10b increases as the distance from the center (point A) of the rotating shaft 8 increases.

In FIG. 1, reference numeral 6 denotes a high-frequency power supply which is connected to the rotating shaft 8 and uses the gas ejection blade 10 as a cathode. The rotating shaft 8 is rotated by a rotating machine (not shown).

In the above embodiment, when the gas ejection blade 10 is rotating with the rotation of the rotating shaft 8, gas is ejected from the gas ejection port 10 b toward the substrate 7, and the gas ejection blade 10 serving as a cathode is connected to the gas ejection blade 10. By the action of the plasma generated in the vacuum chamber 1 by the discharge between the anode 5 and the substrate 7, the gas ejected from the gas ejection port 10b of the gas ejection blade 10 reacts with the substrate 7.
Although a thin film is formed on the surface of the substrate 7, when the gas ejected from the gas ejection port 10b reacts with the substrate 7, an extra reaction product that does not contribute to the formation of the thin film is generated. Become.

However, in the above embodiment, due to the rotation of the gas ejection blade 10, the time of exposing to the fresh gas on the surface of the substrate 7 at a point L away from the center (point A) of the rotating shaft 8 is
Although it becomes proportional to 1 / 2πL, since the number of gas ejection ports 10b increases as the distance from the center (point A) of the rotating shaft 8 increases, the amount of gas ejected from the gas ejection ports 10b decreases. The distance increases from the center (point A) of
Excessive reaction products that do not contribute to the formation of a thin film generated when the gas reacts with the substrate 7 are constantly removed, and
Since the fresh gas supplied at any position on the substrate 7 is constant, the reaction conditions on all surfaces of the substrate 7 are the same, and a uniform thin film is formed on the surface of the substrate 7.

In the above embodiment, the number of gas ejection blades is two. However, the number of gas ejection blades is not limited to two. For example, three gas ejection blades may be provided as shown in FIG. A numerical value may be used. In the above embodiment, the plasma
Although an example of the CVD apparatus is shown, the present invention is not limited to this, and the thermal processing apparatus, the etching apparatus, and the vacuum processing apparatus such as the sputtering apparatus are also separated from the center of the rotation axis similarly to the plasma CVD apparatus of the above embodiment. Therefore, a gas ejection blade having an increased number of gas ejection ports may be provided, and the gas ejection blade may be rotated.

(Effects of the Invention) In the present invention, as the distance from the center of the rotation shaft increases, the number of gas ejection ports of the gas ejection blades increases. Increases as the distance from the center increases. Also, two or more gas ejecting blades are attached to the rotating shaft, and each gas ejecting blade rotates with the rotating shaft, so that extra gas that does not contribute to the formation of a thin film generated when the gas reacts with the substrate is provided. Reaction products are constantly removed from the gaps between the gas ejection blades. Therefore, the fresh gas always comes into contact with the substrate, and the reaction time does not change depending on the location on the substrate, the reaction conditions on all surfaces of the substrate become the same, and a uniform thin film is formed on the surface of the substrate. In addition, the formed thin film is finely processed by uniform etching or the like.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram showing an embodiment of the present invention, FIG. 2 is an explanatory diagram of a gas ejection blade as viewed from a line II in FIG.
The figure is an explanatory view showing a modified example of the gas ejection blade. FIG. 4 is an overall configuration diagram of a conventional apparatus. In the figure, 1 ... Vacuum chamber 7 ... Substrate 8 ... Rotating shaft 8a ... Gas passage 10 ... Gas ejection blade 10a ... Gas ejection chamber 10b ... Gas ejection port The part is shown.

Claims (3)

(57) [Claims] 1. A vacuum processing apparatus for forming a thin film on a surface of a substrate placed in a vacuum chamber or finely processing a thin film formed on the surface, wherein a plurality of gases are provided on a surface facing the substrate. At least two or more gas ejecting blades having an ejection port are attached to the end of a rotating shaft in a propeller shape, and the rotating shaft is supported by the wall of the vacuum chamber. A vacuum processing apparatus configured to be rotated together with the vacuum processing apparatus. 2. The vacuum processing apparatus according to claim 1, wherein the number of gas ejection ports of the gas ejection blades increases as the distance from the center of the rotation shaft increases. 3. The vacuum processing apparatus according to claim 1, wherein the surface of the gas ejection blade facing the substrate expands toward the tip.