JP2908516B2 - Vacuum suction type wafer holding device - Google Patents

Vacuum suction type wafer holding device

Info

Publication number
JP2908516B2
JP2908516B2 JP11574190A JP11574190A JP2908516B2 JP 2908516 B2 JP2908516 B2 JP 2908516B2 JP 11574190 A JP11574190 A JP 11574190A JP 11574190 A JP11574190 A JP 11574190A JP 2908516 B2 JP2908516 B2 JP 2908516B2
Authority
JP
Japan
Prior art keywords
wafer
elastic member
vacuum suction
height
holding device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11574190A
Other languages
Japanese (ja)
Other versions
JPH0414239A (en
Inventor
英治 坂本
隆一 海老沼
真一 原
光司 丸茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP11574190A priority Critical patent/JP2908516B2/en
Priority to EP91304027A priority patent/EP0456426B1/en
Priority to DE69133413T priority patent/DE69133413D1/en
Publication of JPH0414239A publication Critical patent/JPH0414239A/en
Priority to US08/231,785 priority patent/US5374829A/en
Application granted granted Critical
Publication of JP2908516B2 publication Critical patent/JP2908516B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、真空吸着によりウエハの裏面を吸着して保
持する、半導体製造装置に用いられる真空吸着式ウエハ
保持装置に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum suction type wafer holding device used in a semiconductor manufacturing apparatus, which suctions and holds the back surface of a wafer by vacuum suction.

〔従来の技術〕[Conventional technology]

半導体製造装置において、マスクパターンをウエハに
転写する際のウエハ保持装置としては、真空吸着により
該ウエハの裏面を吸着して保持する真空吸着式ウエハ保
持装置(たとえば、特公平1-14703号公報)がよく用い
らている。
In a semiconductor manufacturing apparatus, as a wafer holding device for transferring a mask pattern onto a wafer, a vacuum suction type wafer holding device that sucks and holds the back surface of the wafer by vacuum suction (for example, Japanese Patent Publication No. 1-14703). Is often used.

一般に、ウエハ保持装置でウエハを保持したとき、該
ウエハ保持装置と該ウエハとの接触面の接触熱抵抗が大
きいと、マスクパターンを該ウエハに転写する際の露光
エネルギーが該ウエハから前記ウエハ保持装置に逃げて
いかないため、該ウエハ温度上昇および熱変形を招きパ
ターン転写精度が悪化する。特に、真空吸着式ウエハ保
持装置の場合には、該ウエハ保持装置とウエハとの間の
接触面以外の空間に気体が存在しないため、該ウエハ温
度上昇によるパターン転写精度の悪化が顕著となる。
Generally, when a wafer holding device holds a wafer and the contact thermal resistance of the contact surface between the wafer holding device and the wafer is large, the exposure energy for transferring the mask pattern onto the wafer increases the exposure energy for holding the wafer from the wafer. Since the wafer does not escape to the apparatus, the wafer temperature rises and thermal deformation is caused, and the pattern transfer accuracy is deteriorated. In particular, in the case of a vacuum suction type wafer holding device, since gas does not exist in a space other than the contact surface between the wafer holding device and the wafer, the pattern transfer accuracy is significantly deteriorated due to the rise in the wafer temperature.

また、マスクとウエハとが数十ミクロン隔てて配置さ
れてマスクパターンが転写されるプロキシミティー方式
による露光装置に真空吸着式ウエハ保持装置を用いる場
合にも、前記接触熱抵抗が大きいと、ウエハの温度上昇
によりマスクの温度も上昇し該マスクに熱歪が生じるた
め、パターン転写精度が悪化する。
Further, even when the vacuum suction type wafer holding device is used in a proximity type exposure apparatus in which a mask and a wafer are arranged at a distance of several tens of microns and a mask pattern is transferred, if the contact thermal resistance is large, the wafer may be damaged. As the temperature rises, the temperature of the mask also rises and thermal distortion occurs in the mask, so that the pattern transfer accuracy deteriorates.

したがって、真空吸着式ウエハ保持装置の主構造部材
の吸着されるウエハと対向する面(以下、「対抗面」と
称する)に設けられている突起部は、接触熱抵抗を小さ
くするためおよび吸着後の前記ウエハの平坦度を確保す
るため、該ウエハと接触する面(以下、「接触面」と称
する)が平面仕上げされるとともに、吸着後の前記ウエ
ハの反りを防止するため、剛性率の大きい材質が用いら
れている。
Therefore, the projections provided on the surface of the main structural member of the vacuum suction type wafer holding device which faces the wafer to be sucked (hereinafter referred to as "opposing surface") are provided to reduce the contact thermal resistance and to reduce the contact heat resistance. In order to ensure the flatness of the wafer, a surface that comes into contact with the wafer (hereinafter, referred to as a “contact surface”) is flat-finished, and the wafer has a high rigidity to prevent the wafer from being warped after suction. The material is used.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかしながら、上記従来例では、前記突起部の接触面
が平面仕上げされているにもかかわらず、該接触面には
微小な凹凸やうねりが存在し、かつ前記ウエハの裏面に
も微小な凹凸やうねりが存在するため、前記ウエハの裏
面を真空吸着させたときの実際の接触面積は見かけの面
積に比べ非常に小さくなるので、接触熱抵抗が大きくな
りパターン転写精度の悪化を完全に防止することができ
ないという問題がある。
However, in the above conventional example, although the contact surface of the projection is flat-finished, the contact surface has minute irregularities and undulations, and the surface of the wafer has minute irregularities and undulations. Is present, the actual contact area when the back surface of the wafer is vacuum-sucked is much smaller than the apparent area, so that contact thermal resistance increases and deterioration of pattern transfer accuracy can be completely prevented. There is a problem that can not be.

本発明の目的は、接触熱抵抗が小さくでき、パターン
転写精度の向上が図れる真空吸着ウエハ保持装置を提供
することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a vacuum suction wafer holding device capable of reducing contact thermal resistance and improving pattern transfer accuracy.

〔課題を解決するための手段〕[Means for solving the problem]

本発明の真空吸着式ウエハ保持装置は、 真空吸着によってウエハを保持する装置であって、主
構造部材の面に形成された高さの等しい複数の突起部
と、ウエハより小さい剛性率の材質からなる前記突起部
よりも高いまたは等しい弾性部材とを有し、前記複数の
突起部の各々を囲んで前記弾性部材が設けられている。
The vacuum suction type wafer holding device of the present invention is a device for holding a wafer by vacuum suction, comprising a plurality of protrusions having the same height formed on the surface of the main structural member and a material having a rigidity smaller than that of the wafer. And a resilient member higher or equal to the protruding portion, and the resilient member is provided so as to surround each of the plurality of protruding portions.

また、前記突起部の高さがD[mm]、弾性部材のヤン
グ率がE[Pa]、ウエハの表面と裏面との圧力差がT
[Toor]のとき、弾性部材の高さと突起部の高さDとの
の範囲で、前記弾性部材の高さD+d[mm]が設定され
ていてもよく、 さらに、前記主構造部材のウエハ保持面の外周には外
周壁が設けられ、該外周壁で囲まれる内側が真空吸引さ
れてもよく、 前記突出部と前記弾性部材とがともに対称性よく別々
に配置されていてもよい。
The height of the protrusion is D [mm], the Young's modulus of the elastic member is E [Pa], and the pressure difference between the front surface and the back surface of the wafer is T [mm].
For [Toor], the difference between the height of the elastic member and the height D of the protrusion The height D + d [mm] of the elastic member may be set within the range described above. Further, an outer peripheral wall is provided on an outer periphery of the wafer holding surface of the main structural member, and an inner side surrounded by the outer peripheral wall is provided. Vacuum suction may be performed, and the protrusion and the elastic member may be separately arranged with good symmetry.

[作用] 本発明の真空吸着式ウエハ保持装置では、真空吸着さ
れたウエハは突起部の接触面と弾性部材の接触面とに接
触して保持されるが、前記弾性部材は前記ウエハよりも
小さい剛性率の材質でできているため、該ウエハの裏面
に微小な凹凸やうねりがあっても該凹凸やうねりに応じ
てその接触面が変形するので該接触面における接触熱抵
抗を小さくすることができる。
[Operation] In the vacuum suction type wafer holding device of the present invention, the wafer suctioned by vacuum is held in contact with the contact surface of the projection and the contact surface of the elastic member, but the elastic member is smaller than the wafer. Since it is made of a material having a rigidity, even if there are minute irregularities or undulations on the back surface of the wafer, the contact surface is deformed according to the irregularities or undulations, so that the contact thermal resistance on the contact surface can be reduced. it can.

また、前記突出部の高さをD[mm]、前記弾性部材の
ヤング率をE[Pa],前記ウエハの表面と裏面との圧力
差をT[Torr]としたとき、前記弾性部材の高さD+d
[mm]が、 の範囲内で設定されていることにより、吸着時に前記
ウエハに加わる吸引力を、変位量に比例して該ウエハに
加わる前記弾性部材の反発力よりも一桁大きくすること
ができるので、該ウエハの裏面を前記突起部の接触面に
確実に当接させられる。
When the height of the protrusion is D [mm], the Young's modulus of the elastic member is E [Pa], and the pressure difference between the front and back surfaces of the wafer is T [Torr], the height of the elastic member is D + d
[Mm] Is set within the range, the suction force applied to the wafer at the time of suction can be made one order of magnitude larger than the repulsive force of the elastic member applied to the wafer in proportion to the displacement amount. Is reliably brought into contact with the contact surface of the projection.

[実施例] 次に、本発明の実施例について図面を参照して説明す
る。
Example Next, an example of the present invention will be described with reference to the drawings.

第1図(A),(B)はそれぞれ本発明の真空吸着式
ウエハ保持装置の第1の実施例を示す概略構成図、第2
図はウエハ吸着前後の突起部2と弾性部材3との関係を
示す概略構成図である。
FIGS. 1A and 1B are schematic structural views showing a first embodiment of a vacuum suction type wafer holding apparatus according to the present invention, and FIGS.
The figure is a schematic configuration diagram showing the relationship between the protrusion 2 and the elastic member 3 before and after wafer suction.

本実施例の真空吸着式ウエハ保持装置は、吸着される
ウエハ5(第2図参照)の反りを矯正するため剛性率が
大きい材質(たとえば、ステンレス、アルミニウム、セ
ラミックスなど)で構成された、外周壁1aが一体的に設
けられている主構造部材1と、該主構造部材1の前記ウ
エハ5と対向する面(対抗面)に、該主構造部材1と一
体的に対称性よく設けられている高さの等しいピン形状
を有する複数の突起部としての12個の突起部2と、該突
起部2の各々を囲んで設けられた高さの等しい弾性部材
3と、前記主構造部材1の前記対向面の中心部と不図示
の真空発生源とを接続する、前記主構造部材1に設けら
れた真空吸引孔4とを有する。ここで、前記弾性部材3
は、前記主構造部材1および前記ウエハ5よりも剛性率
が小さい材質(たとえば、合成ゴムなど)でできてい
る。また、第2図(A)に示すように、前記弾性部材3
の高さD+d[mm]は、前記突起部2の高さD[mm]よ
りもd[mm]だけ高くなるように設けられている。さら
に、前記突起部2と前記弾性部材3とはそれぞれ、吸着
後の前記ウエハ5の平坦度を確保するため、前記ウエハ
5と接触する面(接触面)が平面仕上げされている。
The vacuum suction type wafer holding device according to the present embodiment is made of a material having a high rigidity (for example, stainless steel, aluminum, ceramics, etc.) for correcting the warpage of the wafer 5 to be sucked (see FIG. 2). A main structural member 1 integrally provided with a wall 1a and a surface (opposing surface) of the main structural member 1 facing the wafer 5 are provided integrally with the main structural member 1 with good symmetry. Twelve protrusions 2 as a plurality of protrusions having pin shapes having the same height, elastic members 3 provided at equal heights surrounding each of the protrusions 2, and the main structural member 1. It has a vacuum suction hole 4 provided in the main structural member 1 for connecting a central portion of the facing surface and a vacuum source (not shown). Here, the elastic member 3
Is made of a material having a lower rigidity than the main structural member 1 and the wafer 5 (for example, synthetic rubber). In addition, as shown in FIG.
Is provided so that the height D + d [mm] is higher than the height D [mm] of the protrusion 2 by d [mm]. Further, in order to ensure the flatness of the wafer 5 after suction, the surface (contact surface) of the projection 2 and the elastic member 3 is finished to be flat.

次に、本実施例の真空吸着式ウエハ保持装置における
ウエハ5の吸着動作について、第2図を用いて説明す
る。
Next, the suction operation of the wafer 5 in the vacuum suction type wafer holding device of the present embodiment will be described with reference to FIG.

吸着動作前に、ウエハ5は、第2図(A)に示すよう
に該ウエハ5と弾性部材3の接触面とが接触する位置ま
で公知の搬送バンド(不図示)により搬送されてくる。
その後、真空吸着孔4を不図示の真空発生源に連通させ
て前記ウエハ5の裏面の真空吸着を開始する。このと
き、前記ウエハ5の表面側の空間の圧力をT[Torr]と
すると、主構造部材1,該主構造部材1の外周壁1aおよび
前記ウエハ5で囲まれる空間に存在する気体は、該空間
の圧力が約0[Torr]になるまで前記真空発生源により
引かれるので、前記ウエハ5の表面と裏面とには圧力差
T[Torr]が生じる。したがって、前記ウエハ5には、 の吸引力が加わる。
Prior to the suction operation, the wafer 5 is transported by a known transport band (not shown) to a position where the wafer 5 and the contact surface of the elastic member 3 come into contact as shown in FIG. 2 (A).
Thereafter, the vacuum suction hole 4 is connected to a vacuum source (not shown) to start vacuum suction on the back surface of the wafer 5. At this time, assuming that the pressure of the space on the front surface side of the wafer 5 is T [Torr], the gas existing in the main structural member 1, the outer peripheral wall 1a of the main structural member 1 and the space surrounded by the wafer 5 is Since the pressure in the space is reduced to about 0 [Torr] by the vacuum generating source, a pressure difference T [Torr] is generated between the front surface and the back surface of the wafer 5. Therefore, the wafer 5 includes Suction force is applied.

一方、該吸引力により前記ウエハ5が前記主構造部材
1の対向面に向って吸引されると、該ウエハ5の変位量
分だけ弾性部材3が縮むため、該弾性部材3の反発力が
前記変位量に比例して前記ウエハ5の裏面に加えられ
る。したがって、前記弾性部材3の高さD+d[mm]と
前記突起部2の高さD[mm]との高さの差d[mm]だけ
前記ウエハ5を変位させたときの前記反発力Fは、前記
弾性部材3のヤング率をE[Pa]とすると、 となるため、前記ウエハ5の裏面を該反発力Fに抗し
て前記突起部2の接触面に当接させるには、前記高さの
差d[mm]が次式を満たしていればよい。
On the other hand, when the wafer 5 is sucked toward the opposing surface of the main structural member 1 by the suction force, the elastic member 3 contracts by an amount corresponding to the displacement of the wafer 5, so that the repulsive force of the elastic member 3 is reduced. It is applied to the back surface of the wafer 5 in proportion to the amount of displacement. Therefore, the repulsive force F when the wafer 5 is displaced by a difference d [mm] between the height D + d [mm] of the elastic member 3 and the height D [mm] of the protrusion 2 is: When the Young's modulus of the elastic member 3 is E [Pa], Therefore, in order for the back surface of the wafer 5 to contact the contact surface of the protrusion 2 against the repulsive force F, the height difference d [mm] may satisfy the following expression. .

ここで、前記ウエハ5の裏面を前記突起部2の接触面
に確実に当接させるには、前記高さの差d[mm]の最大
値を一桁小さくして、該高さの差d[mm]が次式を満た
すようにすればよい。
Here, in order to ensure that the back surface of the wafer 5 abuts against the contact surface of the protrusion 2, the maximum value of the height difference d [mm] is reduced by one digit, and the height difference d [Mm] may satisfy the following equation.

以上のようにして吸着動作が終了すると、ウエハ5の
裏面は、突起部2および弾性部材3の接触面と接触した
状態で真空吸着されて保持される。ここで、前記突起部
2の接触面は平面仕上げされているにもかかわらず微小
な凹凸やうねりをもち、かつ前記ウエハ5の裏面にも微
小な凹凸やうねりがあるため、前記突起部2の接触面の
接触熱抵抗を従来のものよりも小さくすることはできな
いが、前記弾性部材3は前記ウエハ5よりも小さい剛性
率の材質でできているため、該ウエハ5の裏面に微小な
凹凸やうねりがあっても該凹凸やうねりに応じてその接
触面が変形するので、該接触面における接触熱抵抗を小
さくすることができる。
When the suction operation is completed as described above, the rear surface of the wafer 5 is held by vacuum suction while being in contact with the contact surfaces of the protrusion 2 and the elastic member 3. Here, the contact surface of the projection 2 has minute irregularities and undulations even though the contact surface is flat-finished, and the surface of the wafer 5 has minute irregularities and undulations. Although the contact thermal resistance of the contact surface cannot be made smaller than that of the conventional one, the elastic member 3 is made of a material having a rigidity smaller than that of the wafer 5, so that fine irregularities or Even if there is undulation, the contact surface is deformed according to the unevenness or undulation, so that the contact thermal resistance on the contact surface can be reduced.

このことを確認するため、主構造部材1をステンレ
ス,弾性部材3をシリコンゴムで構成し、前記主構造部
材1の高さDを1[mm],前記弾性部材3の高さD+d
を1.05[mm](高さの差d=0.05[mm])として本実施
例の真空吸着式ウエハ保持装置を試作し、ウエハ5を吸
着させたあとの接触熱抵抗R1を測定したところ、 R1=1x10-3[K・m-2/W] であった。また、前記弾性部材3をもたない従来の構成
のものを同様にして試作し、その接触熱抵抗R2を測定し
たところ、 R2=1x10-2[K・m-2/W] であった。
In order to confirm this, the main structural member 1 is made of stainless steel and the elastic member 3 is made of silicon rubber, the height D of the main structural member 1 is 1 mm, and the height D of the elastic member 3 is D + d.
Was set to 1.05 [mm] (difference in height d = 0.05 [mm]), a vacuum suction type wafer holding device of this embodiment was prototyped, and the contact thermal resistance R 1 after suctioning the wafer 5 was measured. R 1 = 1 × 10 −3 [K · m −2 / W] In addition, a prototype having the conventional structure without the elastic member 3 was manufactured in the same manner, and the contact thermal resistance R 2 was measured. As a result, R 2 = 1 × 10 −2 [K · m −2 / W] Was.

したがって、本実施例のものは従来のものに比べて接
触熱抵抗を1/10にすることができるため、ウエハ5の温
度上昇も1/10に抑えることができ、パターン転写精度の
向上が図れた。
Therefore, according to the present embodiment, the contact thermal resistance can be reduced to 1/10 as compared with the conventional one, so that the temperature rise of the wafer 5 can be suppressed to 1/10 and the pattern transfer accuracy can be improved. Was.

なお、本実施例に用いた突起部2の形状は、第1図に
示すように円柱のピン形状のものであるが、これに限る
ものではなく、たとえば角柱のピン形状であってもよ
い。
The shape of the protrusion 2 used in this embodiment is a cylindrical pin shape as shown in FIG. 1, but is not limited to this, and may be, for example, a prismatic pin shape.

以上の説明において、突起部と弾性部材とは、主構造
部材の対向面に対称性よく設けられていたが、非対称に
設けられていてもよい。ただし、ウエハは一般に円板状
の形状を有するため、前記弾性部材は対称性よく設けた
ほうが、吸着後の前記ウエハの平坦度を精度よく保つこ
とができる。
In the above description, the protrusion and the elastic member are provided with good symmetry on the facing surface of the main structural member, but may be provided asymmetrically. However, since the wafer generally has a disk-like shape, it is possible to maintain the flatness of the wafer after suction with high accuracy by providing the elastic member with good symmetry.

また、突起部は主構造部材と一体的に設けられている
が、別体であってもよい。
Further, the protrusion is provided integrally with the main structural member, but may be separate.

[発明の効果] 本発明は、上述のとおり構成されているので、次に記
載する効果を奏する。
[Effects of the Invention] The present invention is configured as described above, and has the following effects.

主構造部材の面に形成された高さの等しい複数の突起部
と、ウエハより小さい剛性率の材質からなる前記突起部
よりも高いまたは等しい弾性部材とを有し、前記複数の
突起部の各々を囲んで弾性部材が設けられていることに
より、真空吸着された前記ウエハが接触されて保持され
る前記弾性部材は該ウエハよりも小さい剛性率の材質で
できているため、該ウエハの裏面に微小な凹凸やうねり
があっても該凹凸やうねりに応じてその接触面が変形す
るので、該接触面における接触熱抵抗を小さくすること
ができ、パターン転写精度の向上が図れるという効果が
ある。
Each of the plurality of protrusions includes a plurality of protrusions having the same height formed on the surface of the main structural member, and an elastic member higher or equal to the protrusions made of a material having a rigidity smaller than that of the wafer. Since the elastic member is provided so as to surround the wafer, the elastic member that is held in contact with the vacuum-sucked wafer is made of a material having a rigidity smaller than that of the wafer. Even if there is minute unevenness or undulation, the contact surface is deformed in accordance with the unevenness or undulation, so that the contact thermal resistance on the contact surface can be reduced, and the effect of improving the pattern transfer accuracy can be achieved.

また、前記突起部の高さをD[mm],前記弾性部材の
ヤング率をE[Pa],前記ウエハの表面と裏面との圧力
差をT[Torr]としたとき、前記弾性部材の高さD+d
[mm]が、 の範囲内で設定されていることにより、吸着時に前記
ウエハに加わる吸引力を、変位量に比例して該ウエハに
加わる前記弾性部材の反発力よりも一桁大きくすること
ができるので、該ウエハの裏面を前記突起部の接触面に
確実に当接させることができるという効果がある。
When the height of the protrusion is D [mm], the Young's modulus of the elastic member is E [Pa], and the pressure difference between the front surface and the back surface of the wafer is T [Torr], the height of the elastic member is D + d
[Mm] Is set within the range, the suction force applied to the wafer at the time of suction can be made one order of magnitude larger than the repulsive force of the elastic member applied to the wafer in proportion to the displacement amount. There is an effect that the back surface of can be reliably brought into contact with the contact surface of the projection.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の真空吸着式ウエハ保持装置の第1の実
施例を示す概略構成図であり、(A)は突起部の接触面
の高さで切断した断面図、(B)は(A)のA−A′線
に沿う断面図、第2図はウエハ吸着前後の突起部2と弾
性部材3との関係を示す概略構成図であり、(A)はウ
エハ吸着前の関係を示す図、(B)はウエハ吸着後の関
係の関係を示す図、(B)はウエハ吸着後の関係を示す
図である。 1,11……主構造部材、1a,11a……外周壁、2,12……突起
部、3,13……弾性部材、4,14……真空吸引孔、5……ウ
エハ、D…突起部の高さ、d……高さの差。
FIG. 1 is a schematic configuration diagram showing a first embodiment of a vacuum suction type wafer holding apparatus according to the present invention, in which (A) is a cross-sectional view cut along the height of a contact surface of a protrusion, and (B) is (B). FIG. 2A is a cross-sectional view taken along the line AA ′, and FIG. 2 is a schematic configuration diagram showing the relationship between the protrusion 2 and the elastic member 3 before and after wafer suction, and FIG. 2A shows the relationship before wafer suction. FIG. 3B is a diagram showing the relationship after the wafer is sucked, and FIG. 2B is a diagram showing the relationship after the wafer is sucked. 1,11: Main structural member, 1a, 11a: Outer peripheral wall, 2,12: Projection, 3,13: Elastic member, 4,14: Vacuum suction hole, 5: Wafer, D: Projection Part height, d ... Difference in height.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 丸茂 光司 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 昭58−57736(JP,A) 実開 平1−104726(JP,U) (58)調査した分野(Int.Cl.6,DB名) H01L 21/68 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Koji Marumo 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-58-57736 (JP, A) −104726 (JP, U) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 21/68

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】真空吸着によってウエハを保持する装置で
あって、主構造部材の面に形成された高さの等しい複数
の突起部と、ウエハより小さい剛性率の材質からなる前
記突起部よりも高いまたは等しい弾性部材とを有し、前
記複数の突起部の各々を囲んで前記弾性部材が設けられ
ていることを特徴とする真空吸着式ウエハ保持装置。
1. An apparatus for holding a wafer by vacuum suction, comprising: a plurality of projections having the same height formed on a surface of a main structural member; and a projection formed of a material having a rigidity smaller than that of the wafer. A vacuum suction type wafer holding device, comprising a high or equal elastic member, wherein the elastic member is provided so as to surround each of the plurality of protrusions.
【請求項2】突起部の高さがD[mm]、弾性部材のヤン
グ率がE[Pa]、ウエハの表面と裏面との圧力差がT
[Toor]のとき、弾性部材の高さと突起部の高さDとの
の範囲で、前記弾性部材の高さD+d[mm]が設定され
ている第1項記載の真空吸着式ウエハ保持装置。
2. The height of the protrusion is D [mm], the Young's modulus of the elastic member is E [Pa], and the pressure difference between the front and back surfaces of the wafer is T [mm].
For [Toor], the difference between the height of the elastic member and the height D of the protrusion 2. The vacuum suction type wafer holding device according to claim 1, wherein the height D + d [mm] of the elastic member is set in the range of (1).
【請求項3】前記主構造部材のウエハ保持面の外周には
外周壁が設けられ、該外周壁で囲まれる内側が真空吸引
されることを特徴とする第1項記載の真空吸着式ウエハ
保持装置。
3. The vacuum suction type wafer holding device according to claim 1, wherein an outer peripheral wall is provided on an outer periphery of the wafer holding surface of the main structural member, and an inner portion surrounded by the outer peripheral wall is evacuated. apparatus.
JP11574190A 1990-05-07 1990-05-07 Vacuum suction type wafer holding device Expired - Fee Related JP2908516B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11574190A JP2908516B2 (en) 1990-05-07 1990-05-07 Vacuum suction type wafer holding device
EP91304027A EP0456426B1 (en) 1990-05-07 1991-05-03 Vacuum type wafer holder
DE69133413T DE69133413D1 (en) 1990-05-07 1991-05-03 Vacuum type substrate support
US08/231,785 US5374829A (en) 1990-05-07 1994-04-25 Vacuum chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11574190A JP2908516B2 (en) 1990-05-07 1990-05-07 Vacuum suction type wafer holding device

Publications (2)

Publication Number Publication Date
JPH0414239A JPH0414239A (en) 1992-01-20
JP2908516B2 true JP2908516B2 (en) 1999-06-21

Family

ID=14669920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11574190A Expired - Fee Related JP2908516B2 (en) 1990-05-07 1990-05-07 Vacuum suction type wafer holding device

Country Status (1)

Country Link
JP (1) JP2908516B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251544A (en) * 1992-03-05 1993-09-28 Fujitsu Ltd Conveyor
US20090031955A1 (en) * 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
JP5542743B2 (en) * 2010-10-07 2014-07-09 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
JP2015199153A (en) * 2014-04-07 2015-11-12 株式会社ディスコ Holding table, and grinding method and cutting method using the same
NL2017542A (en) * 2015-10-29 2017-05-19 Asml Netherlands Bv Lithographic apparatus substrate table and method of loading a substrate
CN112201728A (en) * 2020-10-09 2021-01-08 张言言 Silicon wafer arrangement mechanism for solar panel processing

Also Published As

Publication number Publication date
JPH0414239A (en) 1992-01-20

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