JP2899157B2 - Film generator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus such as a sputtering apparatus , and more particularly to a film forming apparatus having a member for preventing generated film adhesion.
The present invention relates to improvement of a forming device.

[0002]

2. Description of the Related Art Conventionally, in a film forming apparatus such as a sputtering apparatus, a support table for a semiconductor wafer,
Equipment such as a film thickness monitor and a gold trap are provided. Of these, metal particles (neutral molecules called radicals) that separate from the metal target easily adhere to those located behind the semiconductor wafer. . If the material of these fixtures is made of a material with a smooth surface, such as stainless steel, the attached metal fine particles will come off and scatter in the chamber, or cause electrical short-circuit failure. It could be.

[0003] Therefore, traditional, for example, as shown in FIG. 3, and around the semiconductor wafer 50 supported by the supporting base, not shown, the first between the surface side forward and the metal target 51 of the semiconductor wafer 50, A second formed film adhesion preventing member 52,
The provision of 53 prevents metal particles separated from the metal target from adhering to the equipment in the chamber.

[0004] The first generated film adhesion preventing member 52 is formed of a rectangular plate having a window 52a approximate to the outer shape of the semiconductor wafer 50 at the center, and the second generated film adhesion preventing member 53 has a through hole 53a at the center. Consisting of a cone having These generated film adhesion preventing members 52 and 53 are mainly formed of aluminum, stainless steel, or the like because they generate little gas and are easy to process even when used in a high-temperature, vacuum atmosphere.

[0005] These produced film adhesion preventing members 52,
On a surface facing the metal target 5 1 in 53, is provided a minute unevenness is set rough surface condition, so as to increase the adhesion area of the metal particles together to easily adhere the metal particles by the unevenness ing.

By the way, when the amount of metal particles attached increases with the lapse of use, the metal particles adhered to form a film are removed with, for example, an acid-based solvent.
The first and second generated film adhesion preventing members 52 and 53 are reused.

[0007]

[SUMMARY OF THE INVENTION However, the Ru with a solvent of acid in order to fine metal particles adhering to both generate film adhesion preventing member 52 and 53 you removed <br/>, generating film made of a metal The surfaces of the adhesion preventing members 52 and 53 are also melted, and the irregularities formed on the surfaces are likely to be smooth.
In such a case, the metal fine particles are difficult to adhere to, and cannot be reused as it is.

Therefore, in order to reuse, the unevenness must be formed on the generated film adhesion preventing members 52 and 53 again.
It takes time and effort. In addition, the generated film adhesion preventing members 52 and 53
Is melted and consumed over time, so there is a limit in reusing.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and prevents a member for preventing a formed film from adhering even when removing adhering metal fine particles, thereby minimizing the time and effort involved in reusing. And to make it semi-permanently reusable.

[0010]

Means for Solving the Problems] To achieve the above object, the present invention, the generation film adhesion preventing member definitive to film production apparatus configured as follows.

[0011] That is, the raw deposited adhesion preventing member of the present invention, members was roughened a surface facing at least a metal target
Body and, the member is coated on the rough surface of the body <br/> consists acid resistance of the protective layer, and hole Ru expose the interface between the member body and the upper <br/> Symbol protective film or projections are provided
Is what it is. The upper Symbol protective film, Der those by connexion formed on the silicon ladder polymer resin such PPSQ (poly phenylalanine silicon silsesquioxane) resin
You.

[0012]

Acid resistant protective film is coated on the member body of the action Generation film adhesion preventing member, the surface state becomes rough following the rough surface state of parts material body. Therefore, the fine metal particles to separate from the metal target is likely to adhere to the protective film.

[0013] When removing the metal fine particles comprising a film shape adhered to the protective film, the protective film even by using a solvent of acid is acid-resistant, it is not necessary to melt.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows an embodiment of the present invention. In the figure, 1 is a semiconductor wafer, 2 is a metal target, and 3 and 4 are first and second generated film adhesion preventing members.

The first and second generated film adhesion preventing members 3,
Reference numeral 4 denotes a semiconductor wafer 1 supported by a support (not shown).
Surrounding, front side of semiconductor wafer 1 and metal target
2 is provided. Then, the first generated film adhesion
The prevention member 3 approximates the outer shape of the semiconductor wafer 1 at the center.
It is made of a rectangular plate having a window 3a and prevents adhesion of a second generated film.
The member 4 is formed of a cone having a through hole 4a at the center. This
These generated film adhesion preventing members 3, 4The component body that constitutes
Has no gas generation even when used in high temperature and vacuum atmosphere
Mainly because it is easy to process
And stainless steel.

The formed film adhesion preventing members 3, 4
The entire surface of the member main body is provided with minute irregularities so that the surface state is roughly set. The irregularities facilitate the adhesion of the metal fine particles and increase the area of the metal fine particles. The unevenness can be formed by, for example, dry etching.

The present embodiment differs from the conventional example in the structure of the member main bodies of the first and second formed film adhesion preventing members 3 and 4.
Is coated with an acid-resistant protective film 5 on the entire surface.

As the acid-resistant protective film 5, for example, P
A silicon ladder polymer resin such as PSQ (polyphenylsilsesquioxane) resin is selected. And
The protective film 5 includes first and second generated film adhesion preventing members 3,
By simply coating the member body of No. 4 , the surface state becomes rough following the rough surface state of the member body .

Here, when a metal film is deposited on the semiconductor wafer 1 by a film forming apparatus such as a sputtering apparatus,
First and second generated film adhesion preventing members 3 and 4 as described above
Is used, the metal fine particles jumping out of the metal target 2 adhere to the surface of the semiconductor wafer 1, and some of the metal fine particles jumping out of the metal target 2 collide with the plasma generated during sputtering. Instead, they adhere to the first and second generated film adhesion preventing members 3 and 4. Of course, in the case of this embodiment, the metal fine particles are the members of the first and second generated film adhesion preventing members 3 and 4 .
It will adhere to the coercive Mamorumaku 5 does not adhere directly to the body.

As described above, by using the first and second generated film adhesion preventing members 3 and 4, the support for the semiconductor wafer, the film thickness monitor, and the gold trap provided in the chamber of the sputtering apparatus (not shown) can be used. It is possible to prevent the metal fine particles from adhering to the equipment.

When the frequency of such a film forming process increases and the amount of fine metal particles adhering to the first and second formed film adhesion preventing members 3 and 4 increases to form a film, the first and second film forming treatments are prevented. By washing the generated film adhesion preventing members 3 and 4 with an acid-based solvent,
Remove deposited metal particles. At this time, even using a solvent of acid, since both products film adhesion preventing member 3 and 4 are protected by the protective film 5 of the acid resistance, the first, second generation film adhesion preventing member 3,4 The member body does not have to melt. Moreover, in the case where the protective film 5 was PPSQ resin above mentioned are almost insoluble, such damage to the solvent of the protective film 5 itself acid, repainting also a long-term required of the protective film 5. In other words, in the present embodiment, when the first and second generated film adhesion preventing members 3 and 4 are reused, they need only be washed with an acid-based solvent and do nothing else. Therefore, it is economical, such as low running cost, and the first and second generated film adhesion preventing members 3,
Since 4 is not melted can be for semi-permanent use.

FIG. 2 shows another embodiment of the present invention.
In this embodiment, the protective film 5 of the acid-resistant first, not to cover the entire surface of the member body of the second generation film adhesion preventing members 3, are partially coated. Specifically, the protective film 5, the end of the first member body of the product film adhesion preventing member 3
The coating is applied to the entire front and back surfaces except the surface, and is also applied to the entire inner peripheral surface of the member main body of the second generated film adhesion preventing member 4. That is, has the interface exposed to the peripheral edge surface and the outer peripheral edge facet <br/> with a protective film 5 and the member body of the first generation film adhesion preventing member 3 in the window 3a, also,
In the second generated film adhesion preventing member 4, the interface between the protective film 5 and the member main body is exposed at the end face of the small diameter opening and the end face of the large diameter opening.

In this embodiment, in order to remove the attached metal fine particles, an organic solvent is used to remove the first and second formed film adhesion preventing members 3 and 4 as in a lift-off method in the manufacture of a semiconductor device . By peeling the protective film 5 from the member main body, the metal fine particles adhering to the protective film 5 can be removed.

[0025] More specifically, for example, in a container filled with organic solvents such as anisole / xylene mixture solvent, first, Wash with a second generation film adhesion preventing member 3,4, as above mentioned Exposed portions of both film-forming adhesion preventing members 3 and 4
The organic solvent enters from the interface between the material main body and the protective film 5, and the protective film 5 comes off therefrom.

In addition, since the organic solvent is used, the member main bodies of the first and second generated film adhesion preventing members 3 and 4 are not melted, and the surface state thereof is kept rough. Therefore, in the case of reuse, the acid-resistant protective film is applied to the member body of the first and second generated film adhesion preventing members 3 and 4 which are not damaged at all.
5 only needs to be coated. The coating method may be, for example, hand-painting using a brush or a roller, or spraying using a spray.

The present invention is not limited to the above embodiment.
Rather than shall, first, second generation film adhesion preventing member 3,
For such the fourth outer conceivable various ones. Further, as shown in the embodiment of FIG.
4 of member body as an interface between the protective film 5 is not exposed
The first, set a through-hole or protrusion to a suitable location of the second generation film adhesion preventing members 3 only, the protective film 5 so as not to applied to the outer circumferential surface of the inner peripheral surface and the projection of the through hole hand,
The Rukoto exposing both interfaces can be easily peeled off the protective film 5. The through-holes or protrusions, but it may also be utilized in the embodiment of FIG. In that case, it is effective that the peeling time of the protective film 5 can be shortened.

[0028]

As described above, in the present invention, the member main body of the formed film adhesion preventing member is coated with the acid-resistant protective film, and the interface between the member main body and the protective film is exposed.
Therefore, when removing the metal fine particles adhering at the time of film formation with an acid-based solvent, the member of the member for preventing film adhesion is formed.
In addition to keeping the body intact , peel off the protective film and fine metal particles.
Easy to release. Therefore, in addition to be able to reuse the product film adhesion preventing member by a simple process that only washing with a solvent acid, become permanently available, the running cost becomes cheaper.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a use state of a generated film adhesion preventing member according to one embodiment of the present invention.

FIG. 2 is a longitudinal sectional view showing a use state of a generated film adhesion preventing member according to another embodiment of the present invention.

FIG. 3 is a longitudinal sectional view showing a state of use of a conventional formed film adhesion preventing member.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Metal target 3 First generation film adhesion prevention member 4 Second generation film adhesion prevention member 5 Protective film

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁶ , DB name) H01L 21/203 C23F 1/00-4/04 C23C 14/00-14/58 H01L 21/205 H01L 21 / 31 H01L 21/365

Claims (3)

(57) [Claims] 1. A metal target for separating metal fine particles.
And the metal fines are disposed near the metal target.
A film-forming member such as a semiconductor substrate on which a particle film is formed;
Prevention of the metal fine particles from adhering to members other than the member on which the film is to be formed.
Such as a sputtering apparatus having a member for preventing the product film from adhering.
In the film generation apparatus, the generated film adhesion preventing member has a small number.
At least the surface facing the metal target is rough
A film deposition prevention member main body (hereinafter referred to as a member main body);
Acid resistant protection coated on the rough surface of the member body
A main body and the protective film.
Film formation characterized by exposing the interface with
Equipment . 2. The member for preventing adhesion of a generated film to a member main body.
Make sure to provide holes or projections to expose the interface with the protective film.
The film forming apparatus according to claim 1, wherein: 3. An acid-resistant protective film is made of PPSQ (polyphenylene oxide).
Silicon ladder such as neil silsesquioxane) resin
Characterized by being formed of a polymer resin
The film generation device according to claim 1 .