JP2893130B2 - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

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Publication number
JP2893130B2
JP2893130B2 JP2204483A JP20448390A JP2893130B2 JP 2893130 B2 JP2893130 B2 JP 2893130B2 JP 2204483 A JP2204483 A JP 2204483A JP 20448390 A JP20448390 A JP 20448390A JP 2893130 B2 JP2893130 B2 JP 2893130B2
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JP
Japan
Prior art keywords
dielectric
porcelain
dielectric constant
atmosphere
metallization
Prior art date
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Expired - Fee Related
Application number
JP2204483A
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Japanese (ja)
Other versions
JPH0495309A (en
Inventor
信儀 藤川
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Kyocera Corp
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Kyocera Corp
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Priority to JP2204483A priority Critical patent/JP2893130B2/en
Publication of JPH0495309A publication Critical patent/JPH0495309A/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、強還元性雰囲気においても誘電特性の劣化
がなく、Mo−Mnや活性化金属による表面金属化が可能な
誘電体磁器組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a dielectric ceramic composition which does not deteriorate in dielectric properties even in a strongly reducing atmosphere and can be surface-metallized with Mo-Mn or an activating metal. About.

(従来技術) これまで、セラミック回路用基板材料としてはアルミ
ナが主流として用いられている。しかしながら、最近に
至り、基板に静電容量成分を持たせ小型化、低コスト化
を図るか、或いはマイクロ波回路においてストリップ線
路の小型化を図ることを目的として高い誘電率を有する
基板の開発が求められている。
(Prior Art) So far, alumina has been mainly used as a ceramic circuit board material. However, recently, there has been a development of a substrate having a high dielectric constant in order to reduce the size and cost by providing a capacitance component to the substrate, or to reduce the size of a strip line in a microwave circuit. It has been demanded.

上記のような基板に適用できるための特性としては、
基板表面に例えばMo−Mnメタライズ法や活性化金属法に
より金属層を被着形成する際、1000℃〜1300℃でN2−H2
還元ガス雰囲気または真空雰囲気に曝されるために耐還
元性に優れていることが要求される。
Characteristics that can be applied to the substrate as described above include:
When forming a metal layer on the substrate surface by, for example, a Mo-Mn metallization method or an activated metal method, N 2 -H 2 is used at 1000 ° C. to 1300 ° C.
It is required to be excellent in reduction resistance because it is exposed to a reducing gas atmosphere or a vacuum atmosphere.

一方、非還元性を有する高誘電率材料としては、Niや
Cu等を内部電極とする積層セラミックコンデンサ用の誘
電体材料として、チタン酸バリウムを主成分とする誘電
体(特公昭57−42588号、特公昭60−20850,60−20851)
や、ジルコン酸カルシウム又はジルコン酸ストロンチウ
ムを主成分とする温度補償用誘電体材料(特開昭53−98
100号、USP4,260,663号)が知られており、その他にジ
ルコン酸カルシウム・ストロンチウム・バリウムを主成
分とする誘電体材料(特公昭63−50309号)等が提案さ
れている。
On the other hand, non-reducing high dielectric constant materials include Ni and
Dielectric containing barium titanate as a main component (Japanese Patent Publication No. 57-42588, Japanese Patent Publication No. 60-20850, 60-20851) as a dielectric material for a multilayer ceramic capacitor having Cu or the like as an internal electrode.
And a temperature-compensating dielectric material containing calcium zirconate or strontium zirconate as a main component (JP-A-53-9853).
No. 100, U.S. Pat. No. 4,260,663), and a dielectric material containing calcium, strontium, and barium zirconate as a main component (JP-B-63-50309) has been proposed.

(発明が解決しようとする問題点) しかしながら、上記の誘電体のうちチタン酸バリウム
を主成分とする誘電体は、誘電率が5000以上と高く、Ni
やCuと同時焼成する際の還元性雰囲気には耐えうるが、
Mo−Mnメタライズ等の強還元性雰囲気下では耐えられず
に絶縁性が大きく低下する。また、ジルコン酸カルシウ
ムやジルコン酸ストロンチウムを主成分とする誘電体
は、チタン酸バリウムと同様にNi等との同時焼成雰囲気
には耐えられるが、誘電率が37以下と小さいという欠点
を有している。さらに、ジルコン酸カルシウム・ストロ
ンチウム・バリウムを主成分とする誘電体は、マイクロ
波周波数帯域での特性に優れるが誘電率が34と低いとい
う欠点を有している。
(Problems to be Solved by the Invention) However, among the above-mentioned dielectrics, the dielectric having barium titanate as a main component has a high dielectric constant of 5000 or more,
Although it can withstand the reducing atmosphere when co-firing with Cu and Cu,
In a strong reducing atmosphere such as Mo-Mn metallization, the insulation cannot be tolerated and the insulation is greatly reduced. In addition, dielectrics containing calcium zirconate or strontium zirconate as a main component can withstand a co-firing atmosphere with Ni or the like similarly to barium titanate, but have a drawback that the dielectric constant is as small as 37 or less. I have. Furthermore, a dielectric containing calcium, strontium, and barium zirconate as a main component has excellent characteristics in a microwave frequency band, but has a defect that the dielectric constant is as low as 34.

このように強還元性雰囲気において高い誘電率を保持
しうる誘電体が全く存在していないのが現状であった。
At present, there is no dielectric that can maintain a high dielectric constant in a strongly reducing atmosphere.

(発明の目的) 本発明は、強還元性雰囲気中においても優れた耐久性
を有することによりMo−Mnメタライズ等の処理が可能な
誘電率65以上の誘電体磁器組成物を提供することを目的
とする。
(Object of the Invention) It is an object of the present invention to provide a dielectric porcelain composition having a dielectric constant of 65 or more, which has excellent durability even in a strongly reducing atmosphere and is capable of processing such as Mo-Mn metallization. And

(問題点を解決するための手段) 本発明者は、上記の問題点に対して検討を加えた結
果、カルシウムおよび/またはバリウムのジルコン酸塩
に対してチタン酸バリウムを適量添加することにより、
高い耐還元性を有するとともに高い誘電率を有する磁器
が得られることを知見した。
(Means for Solving the Problems) As a result of studying the above problems, the present inventor has found that by adding an appropriate amount of barium titanate to zirconate of calcium and / or barium,
It has been found that porcelain having high reduction resistance and high dielectric constant can be obtained.

本発明の誘電体磁器組成物は、その組成が下記式
(1) x(CayBa1-y)ZrO3・(1−x)BaTiO3 ‥‥(1) で表され、式中のx、yは0.6≦x≦0.95、0≦y≦1.
0、特に0.6≦x≦0.9の範囲に設定される。
The composition of the dielectric ceramic composition of the present invention is represented by the following formula (1) x (Ca y Ba 1-y ) ZrO 3. (1-x) BaTiO 3 ‥‥ (1) , Y is 0.6 ≦ x ≦ 0.95, 0 ≦ y ≦ 1.
0, especially set in the range of 0.6 ≦ x ≦ 0.9.

耐還元性に優れた磁器としてCaZrO3やBaZrO3、あるい
はこれらの組合せからなる磁器が挙げられるが、これら
の磁器は誘電率が33〜55程度と低い。本発明によれば、
この磁器に対してBaTiO3を添加することにより、耐還元
性を損なうことなく、誘電率を大幅に向上することがで
きるのである。BaTiO3の量を上記の範囲に限定したのは
x値が0.95より大きいとBaTiO3添加による誘電率の向上
効果が発揮されず、0.6より小さいと耐還元性が低下しM
o−Mnメタライズあるは活性金属によるメタライズ処理
後の絶縁抵抗が3×1010Ω・cmと低くなり基板としての
特性上不十分となるためである。
Examples of porcelain excellent in reduction resistance include porcelain made of CaZrO 3 , BaZrO 3 , or a combination thereof. These porcelains have a low dielectric constant of about 33 to 55. According to the present invention,
By adding BaTiO 3 to this porcelain, the dielectric constant can be significantly improved without impairing the reduction resistance. When the amount of BaTiO 3 is limited to the above range, the effect of improving the dielectric constant by adding BaTiO 3 is not exhibited when the value of x is larger than 0.95, and when the value of x is smaller than 0.6, the reduction resistance is reduced and M
This is because the insulation resistance after o-Mn metallization or metallization with an active metal is as low as 3 × 10 10 Ω · cm, which is insufficient for the characteristics as a substrate.

また、ジルコン酸塩の金属成分としてはCaあるいはBa
のいずれでもよく、Caに対してはその一部をSrで置換す
ることもできる。
In addition, as a metal component of zirconate, Ca or Ba
And Ca may be partially substituted with Sr.

磁器の作成に当たっては、周知の方法により作成する
ことができ、原料粉末として各金属元素の酸化物、炭酸
塩、硝酸塩等を用いて、例えば1100〜1250℃で仮焼処理
して、一旦CaZrO3、SrZrO3、BaZrO3、BaTiO3の粉末を作
成し、これらを適量混合した混合粉末を周知の成形方法
で成形した後に、1400〜1550℃の酸化性雰囲気中で焼成
することにより得ることができる。
In preparing porcelain can be made by known methods, oxides of the respective metal elements as raw material powder, carbonates, using nitrate, e.g., calcined at 1100 to 1250 ° C., once CaZrO 3 , SrZrO 3 , BaZrO 3 , BaTiO 3 can be obtained by preparing a powder, mixing a suitable amount of these powders by a known molding method, and then firing in an oxidizing atmosphere at 1400 to 1550 ° C. .

また、上記誘電体磁器を基板に適用する場合には、周
知の方法に従い、例えばW、Mo、Mo−Mnのメタライズ金
属ペーストを磁器表面にスクリーン印刷法等により塗布
するか、あるいはTi、TiH2、Zr等の活性金属化法により
金属層を形成後、フォーミングガス(H2−N2)雰囲気中
や不活性雰囲気中で1000〜1300℃で熱処理することによ
り誘電体の表面に金属層を形成することができる。
When the above-mentioned dielectric porcelain is applied to a substrate, a metallized metal paste of, for example, W, Mo, Mo-Mn is applied to the surface of the porcelain by a screen printing method or the like according to a known method, or Ti, TiH 2 , forming a metal layer on the surface of the dielectric by heat treatment of the metal layer by the active metallization method such as Zr after formation, in forming gas (H 2 -N 2) atmosphere or in an inert atmosphere at 1000 to 1300 ° C. can do.

この時、本発明の磁器組成物は還元雰囲気下の処理に
よっても磁器自体の誘電特性、特に絶縁抵抗の低下がな
く、高誘電率基板として有用できるものである。
At this time, the porcelain composition of the present invention can be used as a high-permittivity substrate without a decrease in the dielectric properties of the porcelain itself, especially the insulation resistance, even when treated in a reducing atmosphere.

以下、本発明を次の例で説明する。 Hereinafter, the present invention will be described with reference to the following examples.

(実施例) 原料粉末としてCaCO3、SrCO3、BaCO3、ZrO2、TiO2
用いて1100〜1250℃で仮焼処理し、CaZrO3、SrZrO3、Ba
ZrO3、BaTiO3の仮焼粉末を得た。
(Example) CaCO 3 , SrCO 3 , BaCO 3 , ZrO 2 , and TiO 2 were used as raw material powders, calcined at 1100 to 1250 ° C., and CaZrO 3 , SrZrO 3 , Ba
A calcined powder of ZrO 3 and BaTiO 3 was obtained.

これらの仮焼粉末を第1表の組成に成るように秤量混
合し、成形後、1400〜1550℃の大気中で2時間焼成し、
直径16mm、厚さ2mmの円板状の磁器を得た。
These calcined powders were weighed and mixed so as to have the composition shown in Table 1, and after molding, calcined in the air at 1400 to 1550 ° C for 2 hours.
A disk-shaped porcelain having a diameter of 16 mm and a thickness of 2 mm was obtained.

得られた磁器の両面にIn−Gaを塗布して測定用電極と
し、LCRメーターにより試料コンデンサの静電容量を測
定して誘電率(εr)を求め、一方絶縁抵抗計にて500V
DCで1分充電後の濡れ電流より絶縁抵抗(R)を測定し
た。
In-Ga was applied to both sides of the obtained porcelain to form a measurement electrode, and the capacitance of the sample capacitor was measured with an LCR meter to determine the dielectric constant (εr).
The insulation resistance (R) was measured from the wetting current after charging for 1 minute with DC.

一方、円板状磁器の両面にMo−Mnペーストを塗布し13
00℃のフォーミングガス(H212.5%、N287.5%)雰囲気
中で熱処理し厚み2〜10μmのMo−Mnメタライズ金属膜
を形成した。このメタライズ金属層を電極として上記と
同様な方法により誘電率、絶縁抵抗を測定した。
On the other hand, Mo-Mn paste was applied to both sides of
00 ° C. of forming gas (H 2 12.5%, N 2 87.5%) was heat treated in an atmosphere to form a Mo-Mn metallized metal film of 2~10μm thickness. Using this metallized metal layer as an electrode, the dielectric constant and insulation resistance were measured in the same manner as described above.

結果は第1表に示した。 The results are shown in Table 1.

第1表によれば、x値が0.6より低い試料No.5やNo.6
ではメタライズ後の絶縁抵抗が3×109Ω・cmと小さ
い。x値が0.6以上に設定することによりメタライズ後
の絶縁抵抗の低下は抑制することができる。本発明の試
料は、いずれも誘電率が65以上、メタライズ後の絶縁抵
抗が3×1012Ω・cm以上が達成された。
According to Table 1, Samples No. 5 and No. 6 where the x value is less than 0.6
In this case, the insulation resistance after metallization is as small as 3 × 10 9 Ω · cm. By setting the x value to 0.6 or more, a decrease in insulation resistance after metallization can be suppressed. All of the samples of the present invention achieved a dielectric constant of 65 or more and an insulation resistance after metallization of 3 × 10 12 Ω · cm or more.

(発明の効果) 以上詳述した通り、本発明の誘電体磁器組成物は、優
れた耐還元性を有することから、Mo−MnやTi等の活性金
属により磁器の表面を金属化処理する際の強還元雰囲気
下においても絶縁抵抗の劣化がなく、しかも高い誘電率
を有することから、各種基板材料、例えば電子レンジマ
グネトロンに用いられるノイズ防止用コンデンサ機能付
機密封止磁器基板としての応用が可能となる。
(Effects of the Invention) As described in detail above, the dielectric porcelain composition of the present invention has excellent reduction resistance. Therefore, when the surface of the porcelain is metallized with an active metal such as Mo-Mn or Ti. No degradation of insulation resistance and high dielectric constant even under strong reducing atmosphere, it can be applied to various substrate materials, such as confidential sealed porcelain substrate with capacitor function for noise prevention used in microwave oven magnetron Becomes

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】組成式が x(CayBa1-y)ZrO3・(1−x)BaTiO3 式中、0.6≦x≦0.95 0≦y≦1.0 で表される誘電体磁器組成物。1. A dielectric ceramic composition having a composition formula of x (Ca y Ba 1-y ) ZrO 3. (1-x) BaTiO 3 wherein 0.6 ≦ x ≦ 0.95 0 ≦ y ≦ 1.0.
JP2204483A 1990-07-31 1990-07-31 Dielectric porcelain composition Expired - Fee Related JP2893130B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2204483A JP2893130B2 (en) 1990-07-31 1990-07-31 Dielectric porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2204483A JP2893130B2 (en) 1990-07-31 1990-07-31 Dielectric porcelain composition

Publications (2)

Publication Number Publication Date
JPH0495309A JPH0495309A (en) 1992-03-27
JP2893130B2 true JP2893130B2 (en) 1999-05-17

Family

ID=16491275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2204483A Expired - Fee Related JP2893130B2 (en) 1990-07-31 1990-07-31 Dielectric porcelain composition

Country Status (1)

Country Link
JP (1) JP2893130B2 (en)

Also Published As

Publication number Publication date
JPH0495309A (en) 1992-03-27

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