JP2892922B2 - Method for manufacturing photovoltaic element - Google Patents
Method for manufacturing photovoltaic elementInfo
- Publication number
- JP2892922B2 JP2892922B2 JP5279793A JP27979393A JP2892922B2 JP 2892922 B2 JP2892922 B2 JP 2892922B2 JP 5279793 A JP5279793 A JP 5279793A JP 27979393 A JP27979393 A JP 27979393A JP 2892922 B2 JP2892922 B2 JP 2892922B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- thin
- polycrystalline silicon
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜多結晶シリコンを
光活性層として用いた光起電力素子の製造方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photovoltaic device using thin-film polycrystalline silicon as a photoactive layer.
【０００２】[0002]
【従来の技術】光起電力素子の光活性層として、薄膜多
結晶シリコンを用いることが知られており、このような
光起電力素子においては光電変換効率の向上が求められ
ている。光電変換効率を向上させるための１つの手段と
して、薄膜多結晶シリコンにおける結晶粒を大型化し、
薄膜内におけるキャリア移動度を高める方法がある。2. Description of the Related Art It is known that a thin-film polycrystalline silicon is used as a photoactive layer of a photovoltaic device, and such a photovoltaic device is required to have improved photoelectric conversion efficiency. One means for improving photoelectric conversion efficiency is to increase the size of crystal grains in thin-film polycrystalline silicon,
There is a method of increasing carrier mobility in a thin film.
【０００３】薄膜多結晶シリコンの製造方法の１つとし
て、基板上に非晶質シリコン薄膜を形成し、この非晶質
シリコン薄膜を熱処理して結晶化させる、いわゆる固相
成長法が知られている。固相成長法により結晶粒径の大
きな薄膜多結晶シリコンを製造する方法として、いわゆ
るパーシャルドーピング法が知られている。パーシャル
ドーピング法は、非晶質シリコン薄膜の一部にリン
（Ｐ）あるいはボロン（Ｂ）等をドーピングすることに
より、非晶質シリコンの荷電状態を変化させ、ドーピン
グされた部分から選択的に結晶化を開始させる方法であ
る。パーシャルドーピング法によれば、非晶質シリコン
薄膜中の特定の部分から結晶化が開始されるため、結晶
核の発生を制御することができ、比較的大きな結晶粒径
を有する薄膜多結晶シリコンを得ることができる。As one of the methods for producing thin-film polycrystalline silicon, there is known a so-called solid phase growth method in which an amorphous silicon thin film is formed on a substrate, and the amorphous silicon thin film is crystallized by heat treatment. I have. A so-called partial doping method is known as a method for producing thin-film polycrystalline silicon having a large crystal grain size by a solid phase growth method. In the partial doping method, the charge state of the amorphous silicon is changed by doping a part of the amorphous silicon thin film with phosphorus (P) or boron (B), and the crystal is selectively formed from the doped part. It is a method to start the conversion. According to the partial doping method, crystallization starts from a specific portion in the amorphous silicon thin film, so that the generation of crystal nuclei can be controlled, and a thin film polycrystalline silicon having a relatively large crystal grain size can be obtained. Obtainable.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、光起電
力素子の光電変換効率をさらに向上させるためには、従
来のパーシャルドーピング法により得られる薄膜多結晶
シリコンでは限界があった。However, in order to further improve the photoelectric conversion efficiency of the photovoltaic element, there has been a limit to the thin-film polycrystalline silicon obtained by the conventional partial doping method.
【０００５】本発明の目的は、固相成長法により大きな
結晶粒径を有する薄膜多結晶シリコンを形成し、該薄膜
多結晶シリコンを光活性層として用いる光起電力素子の
製造方法を提供することにある。It is an object of the present invention to provide a method for manufacturing a photovoltaic device in which a thin film polycrystalline silicon having a large crystal grain size is formed by a solid phase growth method and the thin film polycrystalline silicon is used as a photoactive layer. It is in.
【０００６】[0006]
【課題を解決するための手段】本発明の製造方法は、薄
膜多結晶シリコンを光活性層として用いた光起電力素子
を製造する方法であり、膜厚より大きな直径の棒状部を
有する非晶質シリコン膜を形成し、該非晶質シリコン膜
から固相成長法により前記薄膜多結晶シリコンを形成す
ることを特徴としているなお、本発明において、非晶質
シリコン膜の棒状部の直径とは、棒状部の最大直径部分
の直径を意味している。The manufacturing method of the present invention is a method of manufacturing a photovoltaic element using thin-film polycrystalline silicon as a photoactive layer. The amorphous silicon film is formed, and the thin-film polycrystalline silicon is formed from the amorphous silicon film by a solid-phase growth method.In the present invention, the diameter of the rod-shaped portion of the amorphous silicon film is It means the diameter of the largest diameter portion of the bar.
【０００７】[0007]
【作用】本発明の製造方法では、膜厚より大きな直径の
棒状部を有する非晶質シリコン膜を形成し、該非晶質シ
リコン膜から固相成長法により薄膜多結晶シリコンを形
成している。膜厚より大きな直径の棒状部を有する非晶
質シリコン膜を固相成長法により結晶化することによ
り、棒状部から結晶化を開始させている。このような棒
状部を有する非晶質シリコン膜は、凹凸形状の表面を有
する基板上に、熱ＣＶＤ法等により非晶質シリコン薄膜
を形成することにより得ることができる。この際の原料
ガスとしてはＳｉn Ｈ2n+2（ｎ＝１，２，３，４）を用
い、ガス流量を１０〜１００ｓｃｃｍ、基板温度５００
〜６００℃、反応圧力１００〜１００００Ｐａの条件と
することが好ましい。基板としては、ブラスト法等によ
り凹凸形状を付与した基板を用いることが好ましい。According to the manufacturing method of the present invention, an amorphous silicon film having a rod-shaped portion having a diameter larger than the film thickness is formed, and a thin-film polycrystalline silicon is formed from the amorphous silicon film by a solid phase growth method. By crystallizing an amorphous silicon film having a rod portion having a diameter larger than the film thickness by a solid phase growth method, crystallization is started from the rod portion. Such an amorphous silicon film having a rod-shaped portion can be obtained by forming an amorphous silicon thin film on a substrate having an uneven surface by a thermal CVD method or the like. At this time, Si n H 2n + 2 (n = 1, 2, 3, 4) was used as a source gas, the gas flow rate was 10 to 100 sccm, and the substrate temperature was 500.
It is preferable to set the temperature to 600 ° C. and the reaction pressure 100 to 10,000 Pa. As the substrate, a substrate provided with a concavo-convex shape by a blast method or the like is preferably used.
【０００８】図１（ａ）は、このような凹凸面を有する
基板上に非晶質シリコン膜を形成した状態を示す断面図
である。図１（ａ）を参照して、基板１の凹凸面１ａ内
には、非晶質シリコン膜２が形成されており、この非晶
質シリコン膜２には、膜厚より大きな直径の棒状部２ａ
が形成されている。非晶質シリコン膜２は、一般に１０
μｍ〜２０μｍの膜厚で形成されるので、棒状部２ａの
直径はこれよりも大きな直径を有しており、通常１６μ
ｍ〜３０μｍの直径で形成される。また棒状部２ａの厚
みは、一般に数１０μｍ〜数ｍｍの高さで形成される。FIG. 1A is a sectional view showing a state in which an amorphous silicon film is formed on a substrate having such an uneven surface. Referring to FIG. 1A, an amorphous silicon film 2 is formed in an uneven surface 1a of a substrate 1, and a rod-shaped portion having a diameter larger than the film thickness is formed on the amorphous silicon film 2. 2a
Are formed. The amorphous silicon film 2 generally has a thickness of 10
Since the rod-shaped portion 2a is formed with a thickness of 20 μm to 20 μm, the diameter of the rod portion 2a is larger than this,
It is formed with a diameter of m to 30 μm. Further, the thickness of the rod-shaped portion 2a is generally formed at a height of several tens μm to several mm.
【０００９】本発明に従えば、次に、固相成長法により
非晶質シリコン膜を結晶化する。図１（ｂ）を参照し
て、非晶質シリコン膜２において結晶化は棒状部２ａの
部分から開始される。従って、図１（ｂ）に示すような
矢印の方向で結晶化が進行する。固相成長条件として
は、一般に固相成長温度５５０〜７００℃、成長時間１
０〜２５０時間で行われる。According to the present invention, the amorphous silicon film is crystallized by a solid phase growth method. Referring to FIG. 1B, crystallization of the amorphous silicon film 2 starts from a rod-shaped portion 2a. Therefore, crystallization proceeds in the direction of the arrow as shown in FIG. The solid phase growth conditions are generally as follows: solid phase growth temperature 550-700 ° C., growth time 1
Performed in 0 to 250 hours.
【００１０】本発明に従えば、上述のように非晶質シリ
コン膜の棒状部より結晶化が開始されるので、図１
（ｃ）に示すように、非晶質シリコン膜の結晶化により
得られる薄膜多結晶シリコン３においては大きな結晶粒
が形成され、膜厚方向に連なった結晶粒となる。必要に
応じて薄膜多結晶シリコン３の棒状部３ａを除去した
後、この薄膜多結晶シリコン３上に半導体膜等を積層
し、光起電力素子を構成させる。According to the present invention, crystallization starts from the rod-shaped portion of the amorphous silicon film as described above.
As shown in (c), large crystal grains are formed in the thin-film polycrystalline silicon 3 obtained by crystallization of the amorphous silicon film, and the crystal grains are continuous in the film thickness direction. After removing the rod-shaped portion 3a of the thin-film polycrystalline silicon 3 if necessary, a semiconductor film or the like is stacked on the thin-film polycrystalline silicon 3 to form a photovoltaic element.
【００１１】以上のように、本発明に従えば、大きな結
晶粒径を有する薄膜多結晶シリコンを形成させることが
できるので、薄膜内におけるキャリア移動度が高められ
光電変換効率を向上させることができる。As described above, according to the present invention, a polycrystalline silicon thin film having a large crystal grain size can be formed, so that the carrier mobility in the thin film can be increased and the photoelectric conversion efficiency can be improved. .
【００１２】[0012]
【実施例】石英からなる基板を用い、ダイヤモンド粒子
を用いたブラスト法により、この基板の表面に凹凸形状
を形成し、この基板の凹凸面の上にジシラン（Ｓｉ2 Ｈ
6）ガスを原料ガスとして用い、熱ＣＶＤ法により、図
１（ａ）に示すような棒状部２ａを有する非晶質シリコ
ン膜２を形成した。薄膜堆積条件は、Ｓｉ2 Ｈ6 ガス流
量４０ｓｃｃｍ、基板温度６００℃、反応圧力４００Ｐ
ａとした。熱ＣＶＤ装置としては、図５に示すような装
置を用いた。図５を参照して、石英管１１内に設置され
たサセプター１２上に基板１が載せられている。基板温
度は、石英管１１の回りに設けられたヒーター１３によ
って制御される。石英管１１内にはジシランのガスボン
ベ１４からジシランが供給される。必要に応じてジボラ
ン（Ｂ 2 Ｈ6 ）またはホスフィン（ＰＨ3 ）のガスボン
ベ１５から、ｎ型ドーパントのソースガスであるホスフ
ィンまたはｐ型ドーパントのソースガスであるジボラン
が供給される。EXAMPLE A diamond substrate was used on a quartz substrate.
The surface of this substrate is made uneven by the blast method using
Is formed, and disilane (Si) is formed on the uneven surface of the substrate.TwoH
6) Using a gas as a source gas, thermal CVD
Amorphous silicon having a rod-like portion 2a as shown in FIG.
A film 2 was formed. The thin film deposition conditions were SiTwoH6Gas flow
40sccm, substrate temperature 600 ℃, reaction pressure 400P
a. As a thermal CVD apparatus, an apparatus as shown in FIG.
Was used. With reference to FIG.
The substrate 1 is placed on the susceptor 12. Substrate temperature
The temperature is controlled by a heater 13 provided around the quartz tube 11.
Is controlled. Disilane gas bon
Disilane is supplied from the vessel 14. Zebora as needed
(B TwoH6) Or phosphine (PHThreeGasbon
From 15, the phosphine, which is the source gas of the n-type dopant,
Diborane, which is a source gas for quinine or p-type dopant
Is supplied.
【００１３】図１（ａ）に示す非晶質シリコン膜２の形
成に際しては、ｎ型ドーパントであるホスフィンガスを
供給し、ｎ型の非晶質シリコン膜２を形成した。膜厚は
１０μｍであり、棒状部２ａの直径は１６μｍであり、
高さは１ｍｍであった。In forming the amorphous silicon film 2 shown in FIG. 1A, a phosphine gas as an n-type dopant was supplied to form the n-type amorphous silicon film 2. The film thickness is 10 μm, the diameter of the rod portion 2a is 16 μm,
The height was 1 mm.
【００１４】次に、図１（ｂ）に示すように熱処理によ
り固相成長を行った。固相成長条件としては、６５０
℃、１２０時間とした。以上のようにして図２（ａ）に
示すような棒状部３ａを有する薄膜多結晶シリコン３を
形成した。Next, as shown in FIG. 1B, solid phase growth was performed by heat treatment. The solid phase growth conditions are 650
° C and 120 hours. As described above, a thin-film polycrystalline silicon 3 having a rod-like portion 3a as shown in FIG. 2A was formed.
【００１５】次に薄膜多結晶シリコン３の棒状部３ａを
除去した。棒状部３ａの除去は物理的に行い、棒状部３
ａを除去した後、化学的エッチングにより図２（ｂ）に
示すようななめらかな凹凸形状とした。次に図２（ｃ）
に示すように、薄膜多結晶シリコン３の上にｉ型非晶質
シリコン膜４及びｐ型非晶質シリコン膜５を形成し、ｐ
−ｎ接合を形成した。ｉ型非晶質シリコン膜４及びｐ型
非晶質シリコン膜５の膜厚は全体で１００Åとした。Next, the rod portion 3a of the thin film polycrystalline silicon 3 was removed. Removal of the rod portion 3a is performed physically, and the rod portion 3a is removed.
After removing a, a smooth uneven shape as shown in FIG. 2B was formed by chemical etching. Next, FIG.
As shown in FIG. 1, an i-type amorphous silicon film 4 and a p-type amorphous silicon film 5 are formed on
An -n junction was formed. The total thickness of the i-type amorphous silicon film 4 and the p-type amorphous silicon film 5 was 100 °.
【００１６】次に、図３（ａ）に示すように、ｐ型非晶
質シリコン膜５の上にＩＴＯからなる透明導電膜６（膜
厚７００Å）を形成した。さらに、図３（ｂ）に示すよ
うに、この透明導電膜６の上に取り出し電極として串型
のアルミニウム電極７を形成した。図４は、このような
串型アルミニウム電極７の形状を示す平面図である。Next, as shown in FIG. 3A, a transparent conductive film 6 (thickness: 700 °) made of ITO was formed on the p-type amorphous silicon film 5. Further, as shown in FIG. 3B, a skewer-shaped aluminum electrode 7 was formed on the transparent conductive film 6 as an extraction electrode. FIG. 4 is a plan view showing the shape of such a skewer-shaped aluminum electrode 7.
【００１７】以上のようにして得られた本発明に従う実
施例の光起電力素子について、電流−電圧特性を測定し
図６に示した。また、比較として、薄膜多結晶シリコン
３を与える非晶質シリコン膜として棒状部を有さない非
晶質シリコン膜を、ジシランガス流量４０ｓｃｃｍ、基
板温度６００℃、反応圧力１３３Ｐａの条件で作製し、
その他の条件は上記実施例と同様にして比較例の光起電
力素子を作製した。この比較例の光起電力素子の電流−
電圧特性も図６に示した。The current-voltage characteristics of the photovoltaic device of the embodiment according to the present invention obtained as described above were measured and are shown in FIG. As a comparison, an amorphous silicon film having no rod-shaped portion as an amorphous silicon film for providing the thin-film polycrystalline silicon 3 was formed under the conditions of a disilane gas flow rate of 40 sccm, a substrate temperature of 600 ° C. and a reaction pressure of 133 Pa,
The other conditions were the same as in the above example to produce a photovoltaic element of a comparative example. The current of the photovoltaic element of this comparative example
The voltage characteristics are also shown in FIG.
【００１８】図６から明らかなように、本発明に従う実
施例の光起電力素子では短絡電流とフィルファクター
（Ｆ．Ｆ．）が向上しており、比較例と比べ高い光電変
換効率を示している。As is apparent from FIG. 6, the short-circuit current and the fill factor (FF) of the photovoltaic device of the embodiment according to the present invention are improved, and the photovoltaic device exhibits higher photoelectric conversion efficiency than the comparative example. I have.
【００１９】上記実施例では、薄膜多結晶シリコンの上
に非晶質シリコン膜を形成しヘテロ接合を形成させてい
るが、薄膜多結晶シリコンに熱拡散またはイオン注入法
等により逆導電型のドーパントをドープしホモ接合を形
成させてもよい。In the above embodiment, a heterojunction is formed by forming an amorphous silicon film on a thin-film polycrystalline silicon. However, a dopant of an opposite conductivity type is formed in the thin-film polycrystalline silicon by thermal diffusion or ion implantation. To form a homojunction.
【００２０】また、上記実施例では棒状部を有する非晶
質シリコン膜を結晶化させて形成する薄膜多結晶シリコ
ンをｎ型としているが、当然のことながら、この薄膜多
結晶シリコンはｐ型として形成させてもよく、さらには
真性半導体として形成させてもよい。Further, in the above embodiment, the thin-film polycrystalline silicon formed by crystallizing the amorphous silicon film having the rod-shaped portion is of the n-type. It may be formed, or may be formed as an intrinsic semiconductor.
【００２１】[0021]
【発明の効果】本発明の製造方法では、膜厚より大きな
直径の棒状部を有する非晶質シリコン膜を形成し、該非
晶質シリコン膜から固相成長法により薄膜多結晶シリコ
ンを形成し、この薄膜多結晶シリコンを光活性層として
用いている。この薄膜多結晶シリコンは、従来よりも大
きな結晶粒径の薄膜多結晶シリコンとなるので、薄膜内
におけるキャリア移動度が高められ、従来よりも高い光
電変換効率を有する光起電力素子とすることができる。According to the manufacturing method of the present invention, an amorphous silicon film having a rod-shaped portion having a diameter larger than the film thickness is formed, and a thin film polycrystalline silicon is formed from the amorphous silicon film by a solid phase growth method. This thin-film polycrystalline silicon is used as a photoactive layer. Since this thin-film polycrystalline silicon becomes thin-film polycrystalline silicon having a larger crystal grain size than before, the carrier mobility in the thin film is increased, and a photovoltaic device having higher photoelectric conversion efficiency than before can be obtained. it can.
【図１】本発明に従い、棒状部を有する非晶質シリコン
膜を固相成長法により結晶化する工程を示す断面図。FIG. 1 is a cross-sectional view showing a step of crystallizing an amorphous silicon film having a rod portion by a solid phase growth method according to the present invention.
【図２】本発明の実施例における光起電力素子の製造工
程を示す断面図。FIG. 2 is a sectional view showing a manufacturing process of the photovoltaic element according to the embodiment of the present invention.
【図３】図２に示す製造工程の続きの工程を示す断面
図。FIG. 3 is a sectional view showing a step that follows the manufacturing step shown in FIG. 2;
【図４】図３（ｂ）に示す串型アルミニウム電極を示す
平面図。FIG. 4 is a plan view showing the skewer-shaped aluminum electrode shown in FIG. 3 (b).
【図５】本発明に従う実施例において用いた熱ＣＶＤ装
置を示す概略構成図。FIG. 5 is a schematic configuration diagram showing a thermal CVD apparatus used in an example according to the present invention.
【図６】本発明に従う実施例において製造した光起電力
素子の電流−電圧特性を示す図。FIG. 6 is a diagram showing current-voltage characteristics of a photovoltaic device manufactured in an example according to the present invention.
１…基板 １ａ…基板の凹凸面 ２…非晶質シリコン膜 ２ａ…非晶質シリコン膜の棒状部 ３…薄膜多結晶シリコン ３ａ…薄膜多結晶シリコンの棒状部 ４…ｎ型非晶質シリコン膜 ５…ｐ型非晶質シリコン膜 ６…透明導電膜 ７…串型アルミニウム電極 DESCRIPTION OF SYMBOLS 1 ... Substrate 1a ... Uneven surface of substrate 2 ... Amorphous silicon film 2a ... Bar-shaped part of amorphous silicon film 3 ... Thin-film polycrystalline silicon 3a ... Rod-shaped part of thin-film polycrystalline silicon 4 ... N-type amorphous silicon film 5: p-type amorphous silicon film 6: transparent conductive film 7: skewer type aluminum electrode
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/04 H01L 21/20 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 31/04 H01L 21/20
Claims (1)
いた光起電力素子を製造する方法において、 膜厚より大きな直径の棒状部を有する非晶質シリコン膜
を形成し、該非晶質シリコン膜から固相成長法により前
記薄膜多結晶シリコンを形成することを特徴とする光起
電力素子の製造方法。1. A method for manufacturing a photovoltaic device using thin-film polycrystalline silicon as a photoactive layer, comprising: forming an amorphous silicon film having a rod-shaped portion having a diameter larger than the film thickness; Forming the thin-film polycrystalline silicon by a solid phase growth method from the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279793A JP2892922B2 (en) | 1993-11-09 | 1993-11-09 | Method for manufacturing photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279793A JP2892922B2 (en) | 1993-11-09 | 1993-11-09 | Method for manufacturing photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07135332A JPH07135332A (en) | 1995-05-23 |
| JP2892922B2 true JP2892922B2 (en) | 1999-05-17 |
Family
ID=17615992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5279793A Expired - Fee Related JP2892922B2 (en) | 1993-11-09 | 1993-11-09 | Method for manufacturing photovoltaic element |
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| JP (1) | JP2892922B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1082254C (en) * | 1995-08-22 | 2002-04-03 | 松下电器产业株式会社 | Silicon Structure, its mfg. method and apparatus, and solar cell using same |
| KR101411808B1 (en) | 2010-12-10 | 2014-06-25 | 데이진 가부시키가이샤 | Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device |
| JP2012234994A (en) * | 2011-05-02 | 2012-11-29 | Teijin Ltd | Semiconductor silicon film and semiconductor device, and method for manufacturing them |
-
1993
- 1993-11-09 JP JP5279793A patent/JP2892922B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
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| JPH07135332A (en) | 1995-05-23 |
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