JP2885576B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2885576B2 JP2885576B2 JP4209754A JP20975492A JP2885576B2 JP 2885576 B2 JP2885576 B2 JP 2885576B2 JP 4209754 A JP4209754 A JP 4209754A JP 20975492 A JP20975492 A JP 20975492A JP 2885576 B2 JP2885576 B2 JP 2885576B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wafer
- semiconductor
- coordinates
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置に関し、特
に半導体チップのウエハ−上の座標、ウエハ−マップに
係る半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device relating to coordinates of a semiconductor chip on a wafer and a wafer map.
【0002】[0002]
【従来の技術】従来の半導体装置の半導体チップにおけ
るウエハ−マップについて説明すると、半導体不揮発性
メモリを搭載している半導体装置については、ウエハ−
状態での座標をメモリアドレスに書き込み、組立封止後
の半導体不揮発性メモリ装置のメモリアドレスを読み出
すことによりウエハ−内座標を知ることができた(例え
ば特開平3−20060公報参照)。2. Description of the Related Art A wafer map of a semiconductor chip of a conventional semiconductor device will be described.
By writing the coordinates in the state to the memory address and reading the memory address of the semiconductor non-volatile memory device after assembly and sealing, the in-wafer coordinates could be known (for example, see JP-A-3-20060).
【0003】この従来例を図2に基づいて更に説明す
る。図2は、従来例の半導体装置の詳細図であって、図
2の[A]は、ウエハ−マップ1とウエハ−2を示す図
であり、同[B]は、[A]内の1つの半導体チップ3
を拡大して模式的に表わした半導体装置7を示す図であ
る。This conventional example will be further described with reference to FIG. FIG. 2 is a detailed view of a conventional semiconductor device. FIG. 2A shows a wafer map 1 and a wafer 2, and FIG. Semiconductor chips 3
FIG. 4 is a diagram showing a semiconductor device 7 schematically showing an enlarged view of FIG.
【0004】従来例では、図2の[A]、[B]に示す
ように、半導体装置7のウエハ−状態でのウエハ−2内
の位置情報等を各半導体装置チップ3に内蔵するMOS
型不揮発性メモリに書き込む。そして、組立封止工程を
経た後、半導体装置7に内蔵するMOS型不揮発性メモ
リからウエハ−2内の位置情報等を読み出す。In a conventional example, as shown in FIGS. 2A and 2B, a MOS in which information on the position of a semiconductor device 7 in a wafer 2 in a wafer state is incorporated in each semiconductor device chip 3.
Type nonvolatile memory. Then, after passing through the assembly and sealing step, the position information and the like in the wafer-2 are read from the MOS nonvolatile memory incorporated in the semiconductor device 7.
【0005】この読出によって、組立封止後のMOS型
不揮発性メモリを内蔵する半導体装置7では、それがウ
エハ−状態にあった時のウエハ−2内の座標を知ること
ができる。そして、これにより組立封止後の半導体装置
の詳細な評価を行うことで半導体装置の高品質化を図る
ことができるようにしたものである。[0005] By this reading, in the semiconductor device 7 having the built-in and sealed MOS type nonvolatile memory, the coordinates in the wafer-2 when the semiconductor device 7 is in the wafer state can be known. In this way, the semiconductor device after assembly and sealing is evaluated in detail, whereby the quality of the semiconductor device can be improved.
【0006】[0006]
【発明が解決しようとする課題】従来の半導体不揮発性
メモリ搭載の上記半導体装置では、半導体装置のウエハ
−状態でのウエハ−内の位置情報等を各半導体装置チッ
プに内蔵するMOS型不揮発性メモリに書き込まねばな
らず、複雑なうえに半導体不揮発性メモリを必ず搭載す
る必要があるという欠点を有している。また、半導体不
揮発性メモリを搭載していない半導体装置では、半導体
装置のウエハ−状態でのウエハ−内の位置情報等を書き
込むことができないという問題点があった。In the above-mentioned conventional semiconductor device equipped with a semiconductor nonvolatile memory, a MOS nonvolatile memory in which positional information and the like in a wafer state of the semiconductor device in a wafer state is built in each semiconductor device chip. In addition, it has the drawback that it is complicated and that a semiconductor nonvolatile memory must be mounted without fail. Further, in a semiconductor device having no semiconductor non-volatile memory, there is a problem that it is not possible to write position information and the like in a wafer state of the semiconductor device in a wafer state.
【0007】そこで、本発明は、上記欠点、問題点を解
消し、簡単で、しかも、半導体不揮発性メモリ搭載なし
でも半導体装置のウエハ−状態でのウエハ−内の座標を
知ることができる半導体装置を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and provides a semiconductor device which solves the above-mentioned drawbacks and problems and is simple and capable of knowing coordinates in a wafer in a wafer state without mounting a semiconductor nonvolatile memory. The purpose is to provide.
【0008】[0008]
【課題を解決するための手段】そして、本発明の半導体
装置は、ウェハー上での各半導体チップの位置のX,Y
座標に対応して、前記各半導体チップ内のX,Y方向に
配置されたパッド部に、ウェハー上での前記各半導体チ
ップのX,Y座標位置を示すマーキングを打点してなる
ことを特徴とするものであり、これによって上記目的と
する半導体装置を提供するものである。According to the present invention, there is provided a semiconductor device comprising an X, Y position of each semiconductor chip on a wafer.
According to the coordinates, in the X and Y directions in each of the semiconductor chips ,
The arranged pad portions, wherein each semiconductor switch on the wafer
The present invention is characterized in that markings indicating the X- and Y- coordinate positions of the tips are applied, thereby providing the above-described semiconductor device.
【0009】即ち、本発明は、「ウェハー上での各半導
体チップの位置のX,Y座標に対応して、前記各半導体
チップ内のX,Y方向に配置されたパッド部に、ウェハ
ー上での前記各半導体チップのX,Y座標位置を示すマ
ーキングを打点してなることを特徴とする半導体装
置。」を要旨とする。[0009] That is, the present invention relates to " each semiconductor on a wafer.
X position of the body tip, corresponding to the Y coordinate, X in said respective semiconductor chips, the pad portion arranged in the Y direction, the on wafers of each semiconductor chip X, a marking indicating the Y-coordinate position A semiconductor device characterized by being hit. ”.
【0010】[0010]
【実施例】次に、本発明の実施例を図1に基づいて説明
する。図1は、本発明の一実施例を示す半導体装置の詳
細図であって、図1の[A]は、ウエハ−マップ1とウ
エハ−2を示す図であり、同[B]は、[A]内の1つ
の半導体チップ3を拡大して模式的に表わした図であ
る。また、同[C]は、[B]の一部を更に拡大した図
である。Next, an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a detailed view of a semiconductor device showing one embodiment of the present invention. FIG. 1A shows a wafer map 1 and a wafer-2, and FIG. FIG. 2A is an enlarged schematic view of one semiconductor chip 3 in FIG. [C] is a diagram in which a part of [B] is further enlarged.
【0011】なお、図1[A]におけるウエハ−マップ
中の( )内の数字は、X,Y座標を示している。通常
X,Y座標は、ウエハ−検査工程におけるプロ−ブ検査
により求めることができる。The numbers in parentheses in the wafer map in FIG. 1A indicate the X and Y coordinates. Usually, the X and Y coordinates can be obtained by probe inspection in the wafer inspection process.
【0012】このX,Y座標に従って不良インキング装
置であるインカ装置(レ−ザ−発射装置6)によるレ−
ザ−インカ装置を用いて不良インキングを行った後、半
導体チップ3上にX,Y方向に規則正しく並べて配置し
てあるパッド4(図1[B]参照)の一部分を通常より
はほんの少し長くしておく。そして、レ−ザ−を受けた
跡に打点(レ−ザ−マ−ク5)の印が入り易くしておい
たパッド4に向けて、前記したプロ−ブ検査により求め
たX,Y座標に打点(レ−ザ−マ−ク5)を入れる。In accordance with the X and Y coordinates, a laser beam from an inker (laser launcher 6), which is a defective inking device, is used.
After performing the defective inking using the sinker device, a part of the pad 4 (see FIG. 1B) arranged regularly in the X and Y directions on the semiconductor chip 3 is slightly longer than usual. Keep it. Then, the X, Y coordinates obtained by the above-described probe inspection are directed to the pad 4 where the mark of the hit point (laser mark 5) is easily put on the mark where the laser was received. Enter a dot (Laser Mark 5).
【0013】例えば、この実施例では、X=4、Y=2
の座標にある半導体チップ3のパッドで、X方向が左下
から右方向に4つ目、Y方向が左下から上方向に2つ目
のパッドに、それぞれレ−ザ−マ−ク5(図1[B]、
[C]参照)をプロ−ブ検査の不良インキング装置であ
るインカ装置のレ−ザ−発射装置6により打点(レ−ザ
−マ−ク5)を入れる。これにより半導体チップ3のウ
エハ−状態でのX,Y座標を決定することができる。For example, in this embodiment, X = 4, Y = 2
The laser mark 5 (FIG. 1) is provided on the fourth pad in the X direction from the lower left to the right in the X direction and the second pad in the Y direction from the lower left to the upper side in the coordinates [B],
(See [C]), the laser emitting device 6 of the inker device, which is a defective inking device for probe inspection, puts a hit point (laser mark 5). Thus, the X and Y coordinates of the semiconductor chip 3 in the wafer state can be determined.
【0014】上記半導体チップ3以外の半導体チップに
ついても、そのパッド部にレ−ザ−発射装置6の打点
(レ−ザ−マ−ク5)を設け、半導体チップのウエハ−状
態のX,Y座標をプロ−ブ検査におけるX,Y座標と全
く同一の座標として認識させることができる。The semiconductor chip other than the semiconductor chip 3 also has a pad portion of the laser
(Laser mark 5) can be provided so that the X and Y coordinates of the semiconductor chip in the wafer state can be recognized as exactly the same as the X and Y coordinates in the probe inspection.
【0015】[0015]
【発明の効果】本発明は、以上詳記したとおり、半導体
チップ内のX,Y方向に規則正しく配置されたパッドの
一部分にプロ−ブ検査工程で求められたウエハ−マップ
座標に従いレ−ザ−マ−クを打点することを特徴とする
ものであり、これにより、半導体装置の中に半導体不揮
発性メモリを搭載する必要がなく、簡単に実現可能であ
る効果が生ずる。そして、これにより半導体チップのウ
エハ−状態の座標を知ることができ、半導体装置の詳細
な評価を行うことで半導体装置の高品質化を図ることが
できる効果が生ずる。According to the present invention, as described in detail above, a portion of a pad regularly arranged in the X and Y directions in a semiconductor chip is provided with a laser according to a wafer map coordinate obtained in a probe inspection process. The semiconductor device is characterized in that a mark is applied, and thus it is not necessary to mount a semiconductor nonvolatile memory in a semiconductor device, and an effect that can be easily realized is obtained. As a result, the coordinates of the wafer state of the semiconductor chip can be known, and the effect that the quality of the semiconductor device can be improved by performing detailed evaluation of the semiconductor device occurs.
【図1】本発明の一実施例を示す半導体装置の詳細図で
あって、このうち、[A]はウエハ−マップとウエハ−
を示す図、[B]は[A]内の1つの半導体チップを拡
大して模式的に表わした図、[C]は[B]の一部を更
に拡大した図。FIG. 1 is a detailed view of a semiconductor device showing one embodiment of the present invention, wherein [A] is a wafer map and a wafer map;
[B] is a diagram schematically showing one semiconductor chip in [A] on an enlarged scale, and [C] is a diagram further enlarged on a part of [B].
【図2】従来例を示す半導体装置の詳細図であって、こ
のうち、[A]はウエハ−マップとウエハ−を示す図、
[B]は[A]内の1つの半導体チップを拡大して模式
的に表わした図。FIG. 2 is a detailed view of a semiconductor device showing a conventional example, in which [A] shows a wafer map and a wafer,
[B] is a diagram schematically showing an enlarged one semiconductor chip in [A].
1 ウエハ−マップ 2 ウエハ− 3 半導体チップ 4 パッド 5 レ−ザ−マ−ク 6 レ−ザ−発射装置 7 半導体装置 DESCRIPTION OF SYMBOLS 1 Wafer map 2 Wafer 3 Semiconductor chip 4 Pad 5 Laser mark 6 Laser launch device 7 Semiconductor device
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/66 H01L 21/02 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/66 H01L 21/02
Claims (1)
X,Y座標に対応して、前記各半導体チップ内のX,Y
方向に配置されたパッド部に、ウェハー上での前記各半
導体チップのX,Y座標位置を示すマーキングを打点し
てなることを特徴とする半導体装置。[Claim 1] X position of the semiconductor chip on the wafer, corresponding to the Y coordinate, X in said respective semiconductor chips, Y
The pad portion arranged in a direction, each half on the wafer
A semiconductor device characterized by forming markings indicating the X and Y coordinate positions of a conductive chip .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4209754A JP2885576B2 (en) | 1992-07-14 | 1992-07-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4209754A JP2885576B2 (en) | 1992-07-14 | 1992-07-14 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0637156A JPH0637156A (en) | 1994-02-10 |
JP2885576B2 true JP2885576B2 (en) | 1999-04-26 |
Family
ID=16578083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4209754A Expired - Lifetime JP2885576B2 (en) | 1992-07-14 | 1992-07-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2885576B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9899332B2 (en) * | 2016-02-18 | 2018-02-20 | Texas Instruments Incorporated | Visual identification of semiconductor dies |
CN106363304B (en) * | 2016-08-19 | 2018-05-22 | 武汉华工激光工程有限责任公司 | The device that a kind of polyphaser correction and localization method and glass laser are cut |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957442A (en) * | 1982-09-27 | 1984-04-03 | Fujitsu Ltd | Selecting method for chip of integrated circuit |
JPH04288811A (en) * | 1991-03-18 | 1992-10-13 | Sony Corp | Manufacture of semiconductor device |
JPH05315207A (en) * | 1992-05-08 | 1993-11-26 | Nec Corp | Semiconductor device |
-
1992
- 1992-07-14 JP JP4209754A patent/JP2885576B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0637156A (en) | 1994-02-10 |
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