JP2874431B2 - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JP2874431B2 JP2874431B2 JP5396392A JP5396392A JP2874431B2 JP 2874431 B2 JP2874431 B2 JP 2874431B2 JP 5396392 A JP5396392 A JP 5396392A JP 5396392 A JP5396392 A JP 5396392A JP 2874431 B2 JP2874431 B2 JP 2874431B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor chip
- semiconductor device
- external lead
- out terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【産業上の利用分野】本発明は、整流回路に適用する電
力用ダイオードモジュールなどを対象とした樹脂封止形
半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device for a power diode module or the like applied to a rectifier circuit.
【0002】[0002]
【従来の技術】頭記したダイオードモジュールを例に、
図2,図3に示すような樹脂封止形半導体装置の組立構
造が従来より実施されて公知である。各図において、1
は半導体チップ、2は半導体チップ1をマウントした放
熱板兼用の金属ベース、3は外部導出端子、4は金属ベ
ース2と組合わせた外囲器、5は外囲器4の内方に充填
したゲル状充填材である。2. Description of the Related Art Taking the diode module mentioned above as an example,
2. Description of the Related Art An assembly structure of a resin-sealed semiconductor device as shown in FIGS. In each figure, 1
Is a semiconductor chip, 2 is a metal base also serving as a heat sink on which the semiconductor chip 1 is mounted, 3 is an external lead terminal, 4 is an envelope combined with the metal base 2, and 5 is the inside of the envelope 4. It is a gel filler.
【0003】そして、図2の構成においては、外部導出
端子3を半導体チップ1と離れた位置に絶縁物6を介し
て金属ベース2の上に搭載し、半導体チップ2との間を
ボンディングワイヤ7で接続しており、かつ外囲器4の
内方に例えばシリコーンなどゲル状充填材5を充填して
半導体チップ1,外部導出端子3,ボンディングワイヤ
7などを封止している。一方、図3の構成では、L字形
に屈曲した外部導出端子3の接合端部3aが半導体チッ
プ1の上面に直接はんだ付けなどで接合されており、か
つ外囲器4の内方には図2と同様にゲル状充填材5を充
填して半導体チップ1,外部導出端子3を樹脂封止して
いる。In the configuration shown in FIG. 2, the external lead-out terminal 3 is mounted on the metal base 2 via an insulator 6 at a position distant from the semiconductor chip 1, and a bonding wire 7 is provided between the external lead-out terminal 3 and the semiconductor chip 2. And the inside of the envelope 4 is filled with a gel-like filler 5 such as silicone, for example, to seal the semiconductor chip 1, external lead-out terminals 3, bonding wires 7, and the like. On the other hand, in the configuration of FIG. 3, the joining end 3 a of the external lead-out terminal 3 bent into an L shape is directly joined to the upper surface of the semiconductor chip 1 by soldering or the like, and the inside of the envelope 4 is not shown. As in the case of 2, the semiconductor chip 1 and the external lead-out terminal 3 are filled with a gel filler 5 and resin-sealed.
【0004】[0004]
【発明が解決しようとする課題】ところで、前記したダ
イオードモジュールを整流回路に適用する場合には、一
般にダイオードモジュールの直流出力側に平滑コンデン
サを接続している。このために、整流回路の電源投入時
には平滑コンデンサを通じて半導体チップに大きな突入
電流が流れて発熱が生じる。このために、半導体チップ
は前記突入電流に対して必要な耐量を有するのは勿論の
こと、半導体装置の組立構造に付いても、突入電流の繰
り返しによるヒートサイクルにも十分耐えるだけの熱放
散性,接合強度を確保することが要求される。When the above-described diode module is applied to a rectifier circuit, a smoothing capacitor is generally connected to the DC output side of the diode module. For this reason, when the power supply of the rectifier circuit is turned on, a large inrush current flows to the semiconductor chip through the smoothing capacitor, thereby generating heat. For this reason, the semiconductor chip has not only the required amount of resistance to the inrush current but also the heat dissipation property enough to withstand the heat cycle due to the repetition of the inrush current, even in the assembly structure of the semiconductor device. , It is required to secure the bonding strength.
【0005】かかる観点から図2,図3の従来構造を考
察すると、図2の構造では半導体チップ1の発生熱は殆
どが金属ベース2にのみ伝熱して外部に放熱されるた
め、放熱効果が低い。また、図3の構造では発生熱が半
導体チップ1の両面より金属ベース2,外部導出端子3
に伝熱して放熱されるが、外部導出端子3自身は肉厚の
薄い金属板で形成されているため、実際には外部導出端
子3を通じての放熱効果は殆ど殆ど期待できない。Considering the conventional structure shown in FIGS. 2 and 3 from this point of view, in the structure shown in FIG. 2, most of the heat generated in the semiconductor chip 1 is transferred only to the metal base 2 and radiated to the outside, so that the heat radiation effect is reduced. Low. Further, in the structure of FIG.
However, since the external lead-out terminal 3 itself is formed of a thin metal plate, the heat-radiating effect through the external lead-out terminal 3 can hardly be expected in practice.
【0006】さらに、半導体チップ1と外部導出端子3
との間のはんだ接合部,ワイヤボンディング部などは、
突入電流の繰り返しに伴うヒートサイクルが加わると接
合強度が次第に低下して接合部が剥離し易くなる。しか
も、図2,図3の従来構造のように封止樹脂として外囲
器4の内方に充填した軟質なゲル状充填材5は接合部の
補強にはなんら機能せず、このためにヒートサイクルが
原因で前記接合部の劣化が進むと、遂にはボンディング
ワイヤ,外部導出端子が半導体チップから簡単に剥離し
てオープン破壊に至る。Further, the semiconductor chip 1 and the external lead terminals 3
The solder joints and wire bonding parts between
When a heat cycle accompanying the repetition of the rush current is applied, the bonding strength gradually decreases, and the bonded portion is easily peeled. Moreover, the soft gel-like filler 5 filled inside the envelope 4 as a sealing resin as in the conventional structure shown in FIGS. 2 and 3 does not function to reinforce the joint, so that the heat When the deterioration of the bonding portion progresses due to the cycle, the bonding wire and the external lead-out terminal are easily peeled off from the semiconductor chip, resulting in an open breakdown.
【0007】本発明は上記の点にかんがみなされたもの
であり、その目的は前記課題を解決し、放熱性,並びに
ヒートサイクルに対する耐久性の改善が図れるようにし
た樹脂封止形半導体装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has as its object to provide a resin-encapsulated semiconductor device capable of solving the above-mentioned problems and improving heat dissipation and durability against heat cycles. Is to do.
【0008】[0008]
【課題を解決するための手段】上記目的のうち、放熱性
を改善する第1の目的は、本発明により半導体チップに
面接合される外部導出端子の接合端部を他のリード部よ
りも肉厚に形成して構成することにより達成される。ま
た、耐久性を改善する第2の目的は、本発明により外囲
器の内方に硬質樹脂を充填、硬化させて半導体チップ,
外部導出端子を樹脂封止することにより達成される。そ
して、前記硬質樹脂にはエポキシ樹脂を採用するのがよ
い。Among the above objects, a first object of improving heat radiation is to make the joining end of an external lead terminal surface-joined to a semiconductor chip according to the present invention thicker than other lead portions. This is achieved by forming the structure to have a large thickness. A second object of improving the durability is to fill the inside of the envelope with a hard resin according to the present invention and to harden the resin to form a semiconductor chip,
This is achieved by sealing the external lead-out terminal with resin. Preferably, an epoxy resin is used as the hard resin.
【0009】[0009]
【作用】上記構成において、半導体チップに面接合され
る外部導出端子の接合端部を他のリード部よりも肉厚に
形成することにより、該接合端部が半導体チップの発熱
に対する吸熱体として有効に働き、特に突入電流に伴う
過渡的な発生熱を外部導出端子の接合端部の熱容量で吸
収することができ、半導体チップの放熱性が向上する。In the above structure, the joining end of the external lead terminal which is surface-joined to the semiconductor chip is formed to be thicker than the other leads, so that the joining end is effective as a heat absorber for heat generated by the semiconductor chip. In particular, the transient heat generated due to the inrush current can be absorbed by the heat capacity of the junction end of the external lead-out terminal, and the heat dissipation of the semiconductor chip is improved.
【0010】一方、外囲器の内方にエポキシ樹脂などの
硬質樹脂を充填、硬化させて半導体チップ,外部導出端
子を樹脂封止することにより、半導体チップと外部導出
端子との接合部が封止樹脂によって周囲から堅固に固定
されので、ヒートサイクル対して耐久性の高い接合構造
が得られる。On the other hand, the inside of the envelope is filled with a hard resin such as an epoxy resin and cured to seal the semiconductor chip and the external lead-out terminal with a resin, thereby sealing the joint between the semiconductor chip and the external lead-out terminal. Since it is firmly fixed from the surroundings by the resin, a joining structure having high durability against heat cycles can be obtained.
【0011】[0011]
【実施例】図1は本発明の実施例を示すものであり、図
中で図3に対応する同一部材には同じ符号が付してあ
る。すなわち、図1において半導体チップ1の上面に接
合されるL字形に屈曲した外部導出端子3は、あらかじ
めその先端の接合端部3aの肉厚dが、該接合端部から
上方に立ち上がるリード部3bよりも厚く形成されてお
り、かつ該接合端部3aが半導体チップ1の上面にはん
だ付けなどで面接合されている。また、外囲器4の内方
には、封止樹脂としてエポキシ樹脂などの硬質樹脂8を
充填,硬化処理して半導体チップ1,および外部導出端
子3を樹脂封止するとともに、その接合部を周囲から堅
固に固定している。FIG. 1 shows an embodiment of the present invention. In the figure, the same members corresponding to FIG. 3 are denoted by the same reference numerals. That is, the external lead-out terminal 3 bent into an L-shape to be joined to the upper surface of the semiconductor chip 1 in FIG. 1 has a lead portion 3b in which the thickness d of the joint end 3a at the tip thereof rises in advance from the joint end. The bonding end 3a is surface-bonded to the upper surface of the semiconductor chip 1 by soldering or the like. In addition, the inside of the envelope 4 is filled with a hard resin 8 such as an epoxy resin as a sealing resin and cured to seal the semiconductor chip 1 and the external lead-out terminals 3 with a resin. It is firmly fixed from the surroundings.
【0012】[0012]
【発明の効果】以上述べたように、本発明の構成によれ
ば、外部導出端子の接合端部が吸熱体としての役目を果
たするで、半導体チップに対する放熱性を高めることが
できる。また、封止樹脂としてエポキシ樹脂などの硬質
樹脂を用いることにより、封止樹脂が半導体チップと外
部導出端子との接合部を周囲から堅固に固定するので、
突入電流の繰り返しなどによるヒートサイクルで引き起
こされる接合部の剥離を防止して耐久性の改善が図れ
る。As described above, according to the structure of the present invention, the junction end of the external lead-out terminal functions as a heat absorber, so that the heat dissipation to the semiconductor chip can be improved. In addition, by using a hard resin such as an epoxy resin as the sealing resin, the sealing resin firmly fixes a joint portion between the semiconductor chip and the external lead terminal from the periphery,
It is possible to prevent peeling of the joint portion caused by a heat cycle due to repetition of an inrush current or the like, thereby improving durability.
【図1】本発明実施例の構成断面図FIG. 1 is a cross-sectional view illustrating a configuration of an embodiment of the present invention.
【図2】従来における樹脂封止形半導体装置の構成断面
図FIG. 2 is a cross-sectional view of a configuration of a conventional resin-encapsulated semiconductor device.
【図3】図2と異なる従来の樹脂封止形半導体装置の構
成断面図FIG. 3 is a cross-sectional view of a configuration of a conventional resin-encapsulated semiconductor device different from FIG. 2;
1 半導体チップ 2 金属ベース 3 外部導出端子 3a 先端脚部 3b リード部 4 外囲器 8 硬質樹脂(エポキシ樹脂) DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Metal base 3 External lead-out terminal 3a Tip leg 3b Lead part 4 Enclosure 8 Hard resin (epoxy resin)
Claims (3)
上面に外部導出端子を接合し、かつ金属ベースと組合わ
せた外囲器の内方に封止樹脂を充填してなる樹脂封止形
半導体装置において、半導体チップに面接合される外部
導出端子の接合端部を他のリード部よりも肉厚に形成し
たことを特徴とする樹脂封止形半導体装置。1. A resin-sealed semiconductor device in which an external lead-out terminal is joined to an upper surface of a semiconductor chip mounted on a metal base, and a sealing resin is filled inside an envelope combined with the metal base. 3. The resin-encapsulated semiconductor device according to claim 1, wherein the joining end of the external lead terminal which is surface-joined to the semiconductor chip is formed thicker than other lead portions.
いて、外囲器の内方に硬質樹脂を充填し、硬化させて半
導体チップ,外部導出端子を樹脂封止したことを特徴と
する樹脂封止形半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein the inside of the envelope is filled with a hard resin and cured to seal the semiconductor chip and the external lead-out terminals. Resin-sealed semiconductor device.
いて、硬質樹脂がエポキシ樹脂であることを特徴とする
樹脂封止形半導体装置。3. The resin-sealed semiconductor device according to claim 2, wherein the hard resin is an epoxy resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5396392A JP2874431B2 (en) | 1992-03-13 | 1992-03-13 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5396392A JP2874431B2 (en) | 1992-03-13 | 1992-03-13 | Resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05259335A JPH05259335A (en) | 1993-10-08 |
JP2874431B2 true JP2874431B2 (en) | 1999-03-24 |
Family
ID=12957339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5396392A Expired - Fee Related JP2874431B2 (en) | 1992-03-13 | 1992-03-13 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2874431B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020053502A (en) * | 2018-09-26 | 2020-04-02 | 株式会社ケーヒン | Power module |
-
1992
- 1992-03-13 JP JP5396392A patent/JP2874431B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05259335A (en) | 1993-10-08 |
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