JP2873985B2 - Charge suppression device for ion implanter - Google Patents
Charge suppression device for ion implanterInfo
- Publication number
- JP2873985B2 JP2873985B2 JP33658591A JP33658591A JP2873985B2 JP 2873985 B2 JP2873985 B2 JP 2873985B2 JP 33658591 A JP33658591 A JP 33658591A JP 33658591 A JP33658591 A JP 33658591A JP 2873985 B2 JP2873985 B2 JP 2873985B2
- Authority
- JP
- Japan
- Prior art keywords
- disk
- wafer
- ion beam
- receiving plate
- suppression device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ディスク上に保持され
たウェハにイオンビームを照射するイオン注入装置にお
いて、ウェハの帯電量を一定値以下に抑制する帯電抑制
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implanter for irradiating a wafer held on a disk with an ion beam, and to a charge suppressor for suppressing the charge amount of the wafer to a predetermined value or less.
【０００２】[0002]
【従来の技術】従来、イオン注入装置として、ディスク
の環状部に所定間隔をおいて複数のウェハを保持させた
状態で、ディスクを高速で回転させつつ、前記環状部の
外周および内周間にディスクの半径方向にイオンビーム
を低速で繰り返しスキャンさせるか、又はビームに対し
てディスクをスキャンさせてウェハにイオンビームを照
射するものが知られている。2. Description of the Related Art Conventionally, as an ion implantation apparatus, a disk is rotated at a high speed while a plurality of wafers are held at predetermined intervals in an annular portion of a disk, and the wafer is rotated between an outer periphery and an inner periphery of the annular portion. It is known that an ion beam is repeatedly scanned at a low speed in a radial direction of a disk or an ion beam is irradiated on a wafer by scanning a disk with respect to the beam.
【０００３】[0003]
【発明が解決しようとする課題】ところで、この種のイ
オン注入装置においては、イオンビームの照射時に、デ
ィスク上に保持されたウェハ上のＬＳＩパターンには、
注入するイオンの堆積や、イオンビームの照射を受ける
ディスクから生じる多量の２次電子の付着により正又は
負の帯電を生じＬＳＩパターンの劣化および破壊を招く
場合があるという問題がある。By the way, in this type of ion implantation apparatus, at the time of ion beam irradiation, an LSI pattern on a wafer held on a disk has
There is a problem that the deposition of ions to be implanted or the attachment of a large amount of secondary electrons generated from a disk irradiated with an ion beam may cause positive or negative charging, leading to deterioration and destruction of the LSI pattern.
【０００４】本発明の課題は、ウェハの帯電量を一定の
範囲内に抑制してウェハ上のＬＳＩパターンの劣化およ
び破壊を防止することができるイオン注入装置の帯電抑
制装置を提供することにある。An object of the present invention is to provide a charge suppressing device of an ion implantation apparatus which can suppress the charge amount of a wafer within a certain range and prevent deterioration and destruction of an LSI pattern on the wafer. .
【０００５】[0005]
【課題を解決するための手段】本発明によれば、ディス
ク上に保持された複数のウェハにイオンビームを照射す
るイオン注入装置において、前記ディスクのウェハを保
持する複数のウェハ保持部とこれら以外の部分とを電気
的に絶縁する絶縁手段と、前記ディスクのウェハ保持部
にこれら以外の部分のと異なる電圧を印加する電圧印加
手段とを具備するイオン注入装置の帯電抑制装置が得ら
れる。According to the present invention, there is provided an ion implantation apparatus for irradiating a plurality of wafers held on a disk with an ion beam. And a voltage applying means for applying a different voltage to the wafer holding portion of the disk than the other portions of the disk holding device.
【０００６】[0006]
【作用】本発明は、ディスクのウェハ保持部とこれら以
外の部分に異なる電位を与える電圧印加手段により電圧
を印加することにより、イオンビームの照射によりディ
スクから発生する多量の２次電子がウェハに付着し過ぎ
るのを防止でき、印加電圧を調整することにより、正又
は負のウェハの帯電量を調整及び抑制することができ
る。According to the present invention, a large amount of secondary electrons generated from the disk by the irradiation of the ion beam are applied to the wafer by applying a voltage to the wafer holding portion of the disk and a voltage applying means for applying a different potential to other portions. Adhesion can be prevented, and by adjusting the applied voltage, the charge amount of the positive or negative wafer can be adjusted and suppressed.
【０００７】[0007]
【実施例】次に本発明の実施例を図面に基づいて詳細に
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings.
【０００８】図１において符号１はディスクを示してい
る。このディスク１は、図示してない駆動装置により中
心軸２の周りに高速で回転されるようになっている。デ
ィスク１の環状領域には、複数のウェハ保持部３が所定
間隔をおいて設けられている。ウェハ保持部３にはウェ
ハ４が保持されている。これらのウェハ４には、イオン
ビーム５が照射される。このイオンビーム５に対し、デ
ィスク１は半径方向に環状領域の間においてスキャンを
繰り返す。In FIG. 1, reference numeral 1 denotes a disk. The disk 1 is rotated at a high speed around a central axis 2 by a driving device (not shown). A plurality of wafer holders 3 are provided at predetermined intervals in the annular area of the disk 1. The wafer holding unit 3 holds a wafer 4. These wafers 4 are irradiated with an ion beam 5. The disk 1 repeatedly scans the ion beam 5 between the annular regions in the radial direction.
【０００９】図３に示すように、ウェハ保持部３には、
導電性の受板３１がディスク１に絶縁膜６を介して設け
られている。これらの受板３１の上にウェハ４が載置さ
れる。受板３１の周囲のディスク１に複数のウェハクラ
ンプ３２が設けられている。これらのウェハクランプ３
２は、受板３１に載置されたウェハ４を移動しないよう
に保持する。[0009] As shown in FIG.
A conductive receiving plate 31 is provided on the disk 1 with the insulating film 6 interposed therebetween. The wafer 4 is placed on these receiving plates 31. A plurality of wafer clamps 32 are provided on the disk 1 around the receiving plate 31. These wafer clamps 3
2 holds the wafer 4 placed on the receiving plate 31 so as not to move.
【００１０】図４に示すように、受板３１には直流電源
回路７が導線７１、ブラシ７２および複数の導線７３を
介して接続されている。中心軸２の端部には絶縁板８が
設けられている。この絶縁板８の表面に複数の導線７３
の端子部が突出しており、この端子部にブラシ７２が接
触している。ディスク１およびこれと一体の中心軸２は
ともに導電性材料で作られている。中心軸２の外周部に
は、直流電源回路９が導線９１およびブラシ９２を介し
て接続されている。受板３１の電位をＶ1 とし、かつ、
ディスク１の電位をＶ2 とする。Ｖ1 ＞Ｖ2 であれば、
イオンビーム５の照射により発生する２次電子が受板３
１の上のウェハ４に付きやすく、受板に、Ｖ1 ＜Ｖ2 で
あれば２次電子が受板３１の上のウェハ４に付きにく
い。そこで、Ｖ1 ＜Ｖ2 となるように直流電源回路７，
９により受板３１とディスク１に電圧を印加して、ウェ
ハ４に２次電子が付き過ぎないように制限している。As shown in FIG. 4, a DC power supply circuit 7 is connected to the receiving plate 31 via a conductor 71, a brush 72 and a plurality of conductors 73. An insulating plate 8 is provided at an end of the central shaft 2. A plurality of conductive wires 73 are provided on the surface of the insulating plate 8.
Are protruded, and the brush 72 is in contact with this terminal portion. The disk 1 and the central shaft 2 integral therewith are both made of a conductive material. A DC power supply circuit 9 is connected to the outer periphery of the central shaft 2 via a conducting wire 91 and a brush 92. The potential of the receiving plate 31 is V 1, and,
The potential of the disk 1 and V 2. If V 1 > V 2 ,
Secondary electrons generated by the irradiation of the ion beam 5 are transferred to the receiving plate 3.
The secondary electrons are less likely to adhere to the wafer 4 above the receiving plate 31 if V 1 <V 2 . Therefore, the DC power supply circuit 7 is set so that V 1 <V 2 .
9, a voltage is applied to the receiving plate 31 and the disk 1 so as to restrict the secondary electrons from being excessively attached to the wafer 4.
【００１１】図５に示すように、受板３１を接地し、か
つ、ディスク７１を直流電源回路９に接続して、Ｖ1 ＜
Ｖ2 となるようにしてもよい。As shown in FIG. 5, the receiving plate 31 is grounded, the disk 71 is connected to the DC power supply circuit 9, and V 1 <
It may be set to be V 2.
【００１２】また、図６に示すように、受板３１を接地
し、かつ、この受板３１とディスク１との間にコンデン
サ９３と可変抵抗９４とを並列に接続して、イオンビー
ム５の照射時においてディスクに流入してくる電流によ
ってＶ1 ＜Ｖ2 となるようにしてもよい。As shown in FIG. 6, the receiving plate 31 is grounded, and a capacitor 93 and a variable resistor 94 are connected in parallel between the receiving plate 31 and the disk 1 so that the ion beam 5 V 1 <V 2 may be set by the current flowing into the disk during irradiation.
【００１３】なお、図１および図２に示すように、ウェ
ハ４とウェハ４との間のディスク１に導電性の検知片１
０１を絶縁膜を介して設け、この検知片１０１の帯電量
に対応する電圧をチャージセンサー１０が出力し、か
つ、この出力値に基いてディスク１および受板３１の電
位を調整するように構成してもよい。As shown in FIGS. 1 and 2, a conductive detecting piece 1 is provided on a disk 1 between wafers 4.
01 is provided via an insulating film, the charge sensor 10 outputs a voltage corresponding to the charge amount of the detection piece 101, and the potential of the disk 1 and the receiving plate 31 is adjusted based on the output value. May be.
【００１４】[0014]
【発明の効果】本発明によれば、ウェハの帯電量を一定
の範囲内に抑制してウェハ上のＬＳＩパターンの劣化お
よび破壊を防止することができる。According to the present invention, deterioration and destruction of the LSI pattern on the wafer can be prevented by suppressing the charge amount of the wafer within a certain range.
【図１】本発明の一実施例におけるディスク部分の斜視
図である。FIG. 1 is a perspective view of a disk portion according to an embodiment of the present invention.
【図２】図１に示すディスクを拡大して示す略平面図で
ある。FIG. 2 is a schematic plan view showing the disk shown in FIG. 1 in an enlarged manner.
【図３】図１に示すディスクのウェハ保持部およびウェ
ハの保持状態を拡大して示す部分拡大断面図である。FIG. 3 is a partially enlarged cross-sectional view showing a wafer holding portion of the disk shown in FIG.
【図４】本発明の構成を示す概略図である。FIG. 4 is a schematic diagram showing a configuration of the present invention.
【図５】本発明の他の実施例の要部を示すブロック図で
ある。FIG. 5 is a block diagram showing a main part of another embodiment of the present invention.
【図６】本発明の他の実施例の要部を示す電気回路図で
ある。FIG. 6 is an electric circuit diagram showing a main part of another embodiment of the present invention.
１ ディスク ３ ウェハ保持部 ３１ 受板 ４ ウェハ ５ イオンビーム ６ 絶縁膜 ７，９ 直流電源回路 DESCRIPTION OF SYMBOLS 1 Disk 3 Wafer holding part 31 Receiving plate 4 Wafer 5 Ion beam 6 Insulating film 7, 9 DC power supply circuit
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01J 37/317 H01J 37/20 H01L 21/265 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01J 37/317 H01J 37/20 H01L 21/265
Claims (1)
イオンビームを照射するイオン注入装置において、前記
ディスクのウェハを保持する複数のウェハ保持部とこれ
ら以外の部分とを電気的に絶縁する絶縁手段と、前記デ
ィスクのウェハ保持部の電位とこれら以外の部分の電位
とが異なるように電圧を印加する電圧印加手段とを具備
することを特徴とするイオン注入装置の帯電抑制装置。1. An ion implantation apparatus for irradiating a plurality of wafers held on a disk with an ion beam, wherein a plurality of wafer holding portions for holding the wafers of the disk are electrically insulated from other portions. And a voltage applying means for applying a voltage so that the potential of the wafer holding portion of the disk is different from the potential of the other portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33658591A JP2873985B2 (en) | 1991-12-19 | 1991-12-19 | Charge suppression device for ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33658591A JP2873985B2 (en) | 1991-12-19 | 1991-12-19 | Charge suppression device for ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05174775A JPH05174775A (en) | 1993-07-13 |
| JP2873985B2 true JP2873985B2 (en) | 1999-03-24 |
Family
ID=18300674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33658591A Expired - Lifetime JP2873985B2 (en) | 1991-12-19 | 1991-12-19 | Charge suppression device for ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2873985B2 (en) |
-
1991
- 1991-12-19 JP JP33658591A patent/JP2873985B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05174775A (en) | 1993-07-13 |
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