JP2854716B2 - Exposure equipment - Google Patents
Exposure equipmentInfo
- Publication number
- JP2854716B2 JP2854716B2 JP3033131A JP3313191A JP2854716B2 JP 2854716 B2 JP2854716 B2 JP 2854716B2 JP 3033131 A JP3033131 A JP 3033131A JP 3313191 A JP3313191 A JP 3313191A JP 2854716 B2 JP2854716 B2 JP 2854716B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- chamber
- semiconductor wafer
- gas
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus.
【0002】[0002]
【従来技術】半導体製造工程において、半導体ウェハ上
に積層された薄膜にパターン形成するフォトリソグラフ
ィー工程がある。フォトリソグラフィー工程では半導体
ウェハ上にスピンコータ等で均一な厚さにレジストを塗
布し、パターン形成されたマスクを通して投影露光し、
現像後を行ないレジスト薄膜をパターン形状に形成して
いる。これらの露光工程では紫外線を照射してパターン
投影露光を行っている。また、現像工程では現像液で、
光反応して硬化したレジスト以外のレジストを現像除去
したあと、ポジあるいはネガのパターンで残存するレジ
ストパターン形状が高精度に維持できるようにするた
め、ホットプレートに半導体ウェハを載置して加熱し、
紫外線照射に残存するレジストの硬化を行っている。2. Description of the Related Art In a semiconductor manufacturing process, there is a photolithography process for forming a pattern on a thin film laminated on a semiconductor wafer. In the photolithography process, a resist is applied to a uniform thickness on a semiconductor wafer using a spin coater or the like, and projected and exposed through a patterned mask.
After the development, the resist thin film is formed in a pattern shape. In these exposure steps, pattern projection exposure is performed by irradiating ultraviolet rays. In the developing step, a developing solution is used.
After developing and removing the resist other than the resist that has hardened by the light reaction, place the semiconductor wafer on a hot plate and heat it so that the resist pattern shape remaining as a positive or negative pattern can be maintained with high accuracy. ,
The resist remaining after the irradiation of ultraviolet rays is cured.
【0003】[0003]
【発明が解決すべき課題】しかしながら、このようなフ
ォトリソグラフィー工程において、半導体集積回路素子
の超集積度が要求されるに伴い、パターンの形成も超高
精度に均一性が要求されている。そこでこのような半導
体ウェハをチャンバ内で加熱しながら紫外線照射を行う
露光装置では、熱板上に半導体ウェハを水平に載置し、
紫外線を透過させる石英板の蓋体で気密に保持したチャ
ンバ内で処理することが行なわれている。そしてチャン
バの側壁に設けられた導入口及び排気口によりチャンバ
内にN2ガス等の気体流を生じさせ、熱により気化され
て発生するレジストの溶剤等を取り除き、レジスト溶剤
等が石英板に付着して露光のための照射光強度が変化し
て、露光による処理が不均一になるのを防止している。However, in such a photolithography process, as the degree of integration of the semiconductor integrated circuit device is required, uniformity of the pattern formation is also required with ultra-high accuracy. Therefore, in an exposure apparatus that irradiates ultraviolet rays while heating such a semiconductor wafer in a chamber, the semiconductor wafer is placed horizontally on a hot plate,
2. Description of the Related Art Processing is performed in a chamber that is kept airtight by a quartz plate lid that transmits ultraviolet light. Then, a gas flow such as N 2 gas is generated in the chamber by the inlet and exhaust ports provided on the side wall of the chamber, and the solvent of the resist generated by vaporization by heat is removed, and the resist solvent and the like adhere to the quartz plate. As a result, it is possible to prevent the intensity of the irradiation light for exposure from changing, thereby preventing the processing by exposure from becoming non-uniform.
【0004】しかしながら、チャンバ内に供給するN2
ガスはかなりの流量が必要であるため、図4に示すよう
にチャンバ1内で石英板2と熱板3上の半導体ウェハ4
間にN2ガス流を発生させた場合、半導体ウェハ4上に
N2ガス流が大量に当る部分(中央部)5と、少量しか
供給されない部分(周辺部)6とで温度差が生じてしま
う。そのため、露光処理が不均一になってしまった。However, N 2 supplied into the chamber is
Since the gas needs a considerable flow rate, the semiconductor wafer 4 on the quartz plate 2 and the hot plate 3 in the chamber 1 as shown in FIG.
When an N 2 gas flow is generated in between, a temperature difference occurs between a part (central part) 5 where a large amount of N 2 gas flow hits the semiconductor wafer 4 and a part (peripheral part) 6 where only a small amount is supplied. I will. As a result, the exposure processing became uneven.
【0005】本発明は上記の欠点を解消するためになさ
れたものであって、導入窓に気化されて発生するレジス
トの溶剤等が付着するのを減少させ、被露光体の温度均
一な処理が行える露光装置を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and it is possible to reduce the adhesion of a solvent or the like of a resist generated by being vaporized to an introduction window, so that the object to be exposed can be treated at a uniform temperature. An object of the present invention is to provide an exposure apparatus that can perform the exposure.
【0006】[0006]
【課題を解決するための手段】上記の目的を達成するた
め、本発明の露光装置は、被露光体を露光する光の光源
と、前記光の導入窓及び前記被露光体を載置して加熱す
る加熱装置を備えた載置台を設けたチャンバとを備えた
露光装置において、前記導入窓の少なくとも内壁面は前
記被露光体雰囲気温度より高い温度に設定する温度設定
手段を有するものである。In order to achieve the above object, an exposure apparatus according to the present invention comprises a light source for exposing an object to be exposed, a light introduction window and the object to be exposed. And a chamber provided with a mounting table provided with a heating device for heating, wherein at least the inner wall surface of the introduction window has a temperature setting means for setting a temperature higher than the ambient temperature of the object to be exposed.
【0007】さらに前記温度設定手段は、前記光源から
の光を透過する1組の平行板から成る導入窓を備え、前
記導入窓間に温度調整した気体流を形成して成るもので
あってもよいし、前記温度設定手段は、前記光源による
前記被露光体の非処理時に前記載置台を上昇させる上下
移動機構を設けたものであってもよい。Further, the temperature setting means may include an introduction window comprising a pair of parallel plates through which light from the light source is transmitted, and a temperature-adjusted gas flow may be formed between the introduction windows. Alternatively, the temperature setting means may be provided with a vertical movement mechanism for raising the mounting table when the object to be exposed is not processed by the light source.
【0008】[0008]
【作用】本発明の露光装置は露光光源からの光を透過さ
せ、しかも内部を気密に保持させる石英板等から成る導
入窓を備えたチャンバ内で加熱装置を備えた載置台上に
載置された被露光体を露光処理するものである。被露光
体が加熱されることにより発生する気体が導入窓に固体
となって付着するのを防止するため気体流をチャンバ内
に生じさせる気体供給手段が設けられるが、この時大量
の気体が被露光体に当てられて、被露光体の温度が不均
一になることがなく、少量の気体で充分付着が防止でき
るように、熱泳動力の作用により導入窓の温度を調整す
る温度設定手段を設け、導入窓の温度を載置台の温度よ
り高く調整して発生する気体の付着を防止する。温度設
定手段としては、導入窓を光源からの光を透過する1組
の平行板で形成して2層構造とし、この2層構造の間隙
に高い温度に加熱した気体流を流す。また、他の温度設
定手段としては、被露光体の露光処理が行われていない
時に載置台を上昇させ導入窓を加熱させる。このように
して導入窓に付着した付着物を除去できるので、チャン
バ内に起こさせる気体流の流量を減少させるこができ、
被露光体に温度分布を生じさせず、均一な処理を行うこ
とができる。The exposure apparatus of the present invention is mounted on a mounting table provided with a heating device in a chamber having an introduction window made of a quartz plate or the like for transmitting light from an exposure light source and keeping the inside airtight. The exposed object is exposed. Gas supply means for generating a gas flow in the chamber is provided in order to prevent gas generated by heating the object to be exposed to the introduction window as a solid, and at this time, a large amount of gas is applied. Temperature setting means for adjusting the temperature of the introduction window by the action of a thermophoretic force so that the temperature of the object to be exposed to the object to be exposed does not become non-uniform and a small amount of gas can sufficiently prevent adhesion. The temperature of the introduction window is adjusted to be higher than the temperature of the mounting table to prevent adhesion of generated gas. As the temperature setting means, the introduction window is formed of a pair of parallel plates that transmit light from the light source to form a two-layer structure, and a gas stream heated to a high temperature flows through a gap between the two-layer structure. As another temperature setting means, the mounting table is raised to heat the introduction window when the exposure processing of the object to be exposed is not performed. Since the deposits attached to the introduction window can be removed in this manner, the flow rate of the gas flow generated in the chamber can be reduced,
Uniform processing can be performed without causing a temperature distribution on the object to be exposed.
【0009】[0009]
【実施例】本発明の露光装置を現像後のパターン硬化装
置に適用した一実施例を図面を参照して説明する。図1
に示すパターン硬化装置7は主として光源を備えた光源
装置8と、被露光体である半導体ウェハを加熱する加熱
装置を備えた載置台であるホットプレート9を備えるチ
ャンバ10とから成る。光源装置8は所定の波長の紫外
線を発生する光源であるアーク灯、白熱灯等の紫外線ラ
ンプ11、紫外線ランプ11からの紫外線12の散乱を
防止する反射鏡13を備える。光源装置8からの紫外線
12が入射されるチャンバ10は搬送アーム15に支持
される半導体ウェハ14が挿入される挿入口16が設け
られ、チャンバ10内に半導体ウェハ14を搬入出でき
るようになっている。そしてこの挿入口16を開閉する
シャッター17が上下動移動機構に接続されて設けられ
る。チャンバ10内のホットプレート18は内部に埋設
された抵抗発熱体により半導体ウェハ12を所望の温度
に加熱可能となっている。ホットプレート9には図示し
ない上下動機構に接続された支持ピン18の貫通孔が例
えば3カ所設けられ、この貫通孔の周囲にはポリテトラ
フロロエチレン等の摺動部材が取着され、支持ピンが摺
動する際摩擦を小さくして上下動を容易にし、ホットプ
レート9上に半導体ウェハ12を上昇させ、搬送アーム
15との受渡しを行ったり、下降してホットプレート9
上に半導体ウェハを載置したりするようになっている。
さらに、チャンバ10の側壁には窒素ガスの気体流N2
をチャンバ10内に発生させるための窒素ガス供給装置
に接続されたパージガス導入口19及び図示しない排気
装置に接続されたパージガス排気口20を備えた気体供
給手段21を備える。パージガス導入口19は窒素ガス
供給装置から供給されるN2ガスを一担収容する導入管
22に設けられ圧力を一定にしてチャンバ10内に吹き
出すように設けられる。導入口19は穴でなくスリット
状にして設けてもよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the exposure apparatus of the present invention is applied to a pattern curing apparatus after development will be described with reference to the drawings. FIG.
The pattern curing device 7 shown in FIG. 1 mainly includes a light source device 8 having a light source and a chamber 10 having a hot plate 9 as a mounting table having a heating device for heating a semiconductor wafer as an object to be exposed. The light source device 8 includes an ultraviolet lamp 11 such as an arc lamp or an incandescent lamp, which is a light source for generating ultraviolet light of a predetermined wavelength, and a reflecting mirror 13 for preventing the ultraviolet light 12 from being scattered from the ultraviolet lamp 11. The chamber 10 into which the ultraviolet light 12 from the light source device 8 is incident is provided with an insertion port 16 into which the semiconductor wafer 14 supported by the transfer arm 15 is inserted, so that the semiconductor wafer 14 can be carried into and out of the chamber 10. I have. A shutter 17 for opening and closing the insertion opening 16 is provided to be connected to the vertical movement mechanism. The hot plate 18 in the chamber 10 can heat the semiconductor wafer 12 to a desired temperature by a resistance heating element embedded therein. The hot plate 9 is provided with, for example, three through holes for support pins 18 connected to a vertical movement mechanism (not shown). Around the through holes, a sliding member such as polytetrafluoroethylene is attached. When the semiconductor wafer slides, the friction is reduced to facilitate the vertical movement, the semiconductor wafer 12 is raised on the hot plate 9, and is transferred to and from the transfer arm 15, and the hot wafer 9 is lowered.
A semiconductor wafer is mounted thereon.
Further, a gas flow N 2 of nitrogen gas is provided on the side wall of the chamber 10.
And a gas supply means 21 having a purge gas inlet 19 connected to a nitrogen gas supply device for generating gas in the chamber 10 and a purge gas exhaust port 20 connected to an exhaust device (not shown). The purge gas introduction port 19 is provided in an introduction pipe 22 for accommodating N 2 gas supplied from a nitrogen gas supply device, and is provided so as to blow out into the chamber 10 at a constant pressure. The inlet 19 may be provided in a slit shape instead of a hole.
【0010】このようなチャンバ10内を気密に保持す
る蓋体23は図2に示すように、温度設定手段を形成す
る1組の平行板である石英板から形成される導入窓24
a及び24bを2層に設けた2層構造に設けられる。導
入窓24a及び24bは光源装置8からの紫外線12が
透過して半導体ウェハ14の露光処理が可能になってい
る。蓋体23の石英板24a及び24b間には加熱され
た気体例えばN2等の不活性ガス、エア等の供給装置2
5に接続された供給口26が備えられ、導入窓24a及
び24b間に供給された気体が図示しない排気装置に接
続された排出口27から排気される間にチャンバ10内
の温度より10℃高くなるような温度に導入窓24bを
加熱するようになっている。導入窓24a及び24bが
10℃高く設定されると、温度差により粒子に熱泳動力
が作用し、この温度差が例えば3℃より大きいと粒子が
沈着しないことが実験によって確認されている。導入窓
24a及び24b間隔は加熱された気体流量により決定
されるが、流量が10〜15l/分程度であれば5〜1
0mmが好適である。As shown in FIG. 2, the lid 23 for keeping the inside of the chamber 10 airtight is an introduction window 24 formed of a quartz plate which is a set of parallel plates forming a temperature setting means.
a and 24b are provided in a two-layer structure in which two layers are provided. The ultraviolet rays 12 from the light source device 8 are transmitted through the introduction windows 24a and 24b so that the semiconductor wafer 14 can be exposed. A supply device 2 for supplying heated gas, for example, an inert gas such as N 2 , air, etc., between the quartz plates 24 a and 24 b of the lid 23.
5 is provided, and while the gas supplied between the introduction windows 24a and 24b is exhausted from the exhaust port 27 connected to an exhaust device (not shown), the supply port 26 is higher by 10 ° C. than the temperature in the chamber 10. The introduction window 24b is heated to such a temperature. When the introduction windows 24a and 24b are set higher by 10 ° C., a thermophoretic force acts on the particles due to the temperature difference, and it has been confirmed by experiments that if the temperature difference is larger than 3 ° C., for example, the particles do not deposit. The interval between the introduction windows 24a and 24b is determined by the flow rate of the heated gas.
0 mm is preferred.
【0011】このような構成のパターン硬化装置7で半
導体ウェハ14の露光を行うには、搬送アーム15に支
持された半導体ウェハ14がシャッター17が開けられ
た挿入口16からチャンバ10内に搬入されると、支持
ピン18が上昇され搬送アーム15から半導体ウェハ1
4を受取り、搬送アーム15が後退してシャッター17
が閉じられ、チャンバ10内が気密に保たれる。支持ピ
ン18が下降して半導体ウェハ14は200℃に温度設
定されたホットプレート9上に載置される。光源装置8
の紫外線ランプ11から紫外線12が発光されると紫外
線12は蓋体23の導入窓24a及び24bを透過して
半導体ウェハを照射して露光処理を行う。チャンバ10
内にはN2ガス供給体から供給されるN2ガスがパージガ
ス導入口19からチャンバ10内に導入され、排気口2
0から排気されて気体流が形成され、加熱されて発生す
る半導体ウェハ14に塗布されたレジストの気化された
溶剤が気体と共に排気口20からチャンバ10外に送出
される。この時蓋体23の導入窓24a及び24b間に
ホットプレート9の温度より10℃高い例えば210℃
に加熱されたN2ガスが気体供給装置25から供給さ
れ、導入窓24bを210℃に加熱する。このように石
英板24bをホットプレート9の温度つまりチャンバ1
0内の温度より10℃高くすることにより、粒子に熱泳
動力が作用し、導入窓24bの表面に粒子が付着して汚
染するのを防止することができる。従って導入窓24b
の表面を常時クリーンな状態に維持できるため、汚染物
付着による紫外線照射強度の変化等の不都合は発生せ
ず、均一な光強度にて半導体ウェハ14を露光処理する
ことができる。また、パージガス導入口19からチャン
バ10内に供給されるN2ガスの流量は従来の20〜3
0l/分から10〜15l/分と約半分に減少させるこ
とができ、従って従来のようにチャンバ10内の大量の
N2ガス量により半導体ウェハが冷却されることなく、
半導体ウェハ面内において温度差を生じずに均一な露光
処理を行うことができる。In order to expose the semiconductor wafer 14 with the pattern curing device 7 having such a configuration, the semiconductor wafer 14 supported by the transfer arm 15 is carried into the chamber 10 through the insertion opening 16 in which the shutter 17 is opened. Then, the support pins 18 are raised and the semiconductor wafer 1 is
4 and the transfer arm 15 is retracted and the shutter 17
Is closed, and the inside of the chamber 10 is kept airtight. The support pins 18 are lowered, and the semiconductor wafer 14 is placed on the hot plate 9 set at a temperature of 200 ° C. Light source device 8
When the ultraviolet rays 12 are emitted from the ultraviolet lamp 11, the ultraviolet rays 12 pass through the introduction windows 24a and 24b of the lid 23 and irradiate the semiconductor wafer to perform an exposure process. Chamber 10
N 2 gas supplied from N 2 gas supply member is introduced into the chamber 10 from the purge gas inlet port 19 within the exhaust port 2
A gas flow is formed by exhausting the gas from 0, and the vaporized solvent of the resist applied to the semiconductor wafer 14 generated by heating is sent out of the chamber 10 from the exhaust port 20 together with the gas. At this time, 210 ° C. higher than the temperature of the hot plate 9 by 10 ° C. between the introduction windows 24 a and 24 b of the lid 23.
N 2 gas heated to is supplied from the gas supply unit 25, to heat the inlet window 24b to 210 ° C.. Thus, the temperature of the hot plate 9, that is, the temperature of the chamber 1
By setting the temperature higher than the temperature in 0 ° C. by 10 ° C., a thermophoretic force acts on the particles, thereby preventing the particles from adhering to and contaminating the surface of the introduction window 24b. Therefore, the introduction window 24b
The surface of the semiconductor wafer 14 can always be maintained in a clean state, so that there is no inconvenience such as a change in the intensity of ultraviolet irradiation due to the attachment of contaminants, and the semiconductor wafer 14 can be exposed to light with a uniform light intensity. The flow rate of the N 2 gas supplied into the chamber 10 from the purge gas inlet 19 is 20 to 3
From about 0 l / min to about 10 to 15 l / min, it can be reduced by about half, so that the semiconductor wafer is not cooled by the large amount of N 2 gas in the chamber 10 as in the prior art.
A uniform exposure process can be performed without causing a temperature difference in the semiconductor wafer surface.
【0012】また、他の実施例として図3に示すよう
に、チャンバ10の蓋体28は導入窓24aのみを有す
る一層構造とするが、ホットプレート9に温度設定手段
を構成する上下移動機構29を備える。上下移動機構2
9はホットプレート9を導入窓24aに2〜3mmまで接
近させ得る。そして1枚の半導体ウェハ14をチャンバ
10内に搬入し、パージガス導入口19からN2ガス流
をチャンバ10内に形成しながら露光処理を行い、半導
体ウェハ14をチャンバ10から搬出した後、ホットプ
レート9を上下移動機構29を作動させ導入窓24aに
2〜3mm距離に接近させる。そして導入窓24aをチャ
ンバ10内より高い温度に加熱して、半導体ウェハ14
を熱処理した際に発生したレジストの溶剤等が固化して
付着したのを熱泳動力により導入窓24aから除去させ
る。この時パージガス導入口19からN2ガスをチャン
バ10内に供給し、排気口20から導入窓24aから離
脱した粒子をN2ガスと共に排気させる。この操作は半
導体ウェハ14を1枚処理する毎に行ってもよいし、何
枚か処理した後に行うようにしてもよい。As another embodiment, as shown in FIG. 3, the lid 28 of the chamber 10 has a single-layer structure having only the introduction window 24a. Is provided. Vertical movement mechanism 2
9 allows the hot plate 9 to approach the introduction window 24a up to 2-3 mm. Then, one semiconductor wafer 14 is loaded into the chamber 10, exposure processing is performed while forming a N 2 gas flow into the chamber 10 from the purge gas inlet 19, and the semiconductor wafer 14 is unloaded from the chamber 10, 9 is moved up and down to a distance of 2 to 3 mm to the introduction window 24a by operating the vertical movement mechanism 29. Then, the introduction window 24a is heated to a higher temperature than the inside of the chamber 10 so that the semiconductor wafer 14
Is removed from the introduction window 24a by thermophoretic force due to the solidification and adhesion of the resist solvent and the like generated during the heat treatment. At this time, the N 2 gas is supplied into the chamber 10 from the purge gas inlet 19, and the particles separated from the inlet window 24a through the outlet 20 are exhausted together with the N 2 gas. This operation may be performed each time one semiconductor wafer 14 is processed, or may be performed after several semiconductor wafers 14 are processed.
【0013】このように蓋体をクリーニングすることで
常時均一な露光が可能となり半導体ウェハ14の処理時
にはN2ガスを大量に流出させずに露光処理を行うこと
ができ、半導体ウェハの温度が不均一にならないため均
一な露光処理をすることができる。上記実施例では半導
体ウェハ上に形成したレジスト膜の露光工程に適用した
例について説明したが、LCDの製造、プリント基板の
製造等露光装置であれば何れのものにも適用できる。By cleaning the lid in this manner, uniform exposure can be performed at all times. When processing the semiconductor wafer 14, the exposure process can be performed without allowing a large amount of N 2 gas to flow out, and the temperature of the semiconductor wafer is not affected. Since it is not uniform, uniform exposure processing can be performed. In the above embodiment, an example in which the present invention is applied to the exposure step of a resist film formed on a semiconductor wafer is described. However, the present invention can be applied to any exposure apparatus such as LCD manufacturing and printed circuit board manufacturing.
【0014】[0014]
【発明の効果】以上の説明からも明らかなように、本発
明の露光装置によれば、導入窓をチャンバより高い温度
に調節する温度設定手段を設けたため、熱泳動作用によ
り導入窓にレジスト等の溶剤が気化して付着することが
なく、導入窓の汚染を防止できかつ少量のパージガスで
露光処理を行うことができる。そのため半導体ウェハの
温度均一を保持して均一な処理を行い、高品位な製品を
効率よく製造することができる。As is clear from the above description, according to the exposure apparatus of the present invention, since the temperature setting means for adjusting the temperature of the introduction window to a temperature higher than that of the chamber is provided, a resist or the like is provided on the introduction window by the thermophoretic action. The solvent can be prevented from evaporating and adhering, and the contamination of the introduction window can be prevented, and the exposure process can be performed with a small amount of purge gas. Therefore, uniform processing can be performed while maintaining uniform temperature of the semiconductor wafer, and a high-quality product can be efficiently manufactured.
【図1】本発明の露光装置の一実施例を示す斜視図FIG. 1 is a perspective view showing an embodiment of an exposure apparatus of the present invention.
【図2】図1に示す一実施例の要部を示す図FIG. 2 is a diagram showing a main part of the embodiment shown in FIG. 1;
【図3】他の実施例を示す図FIG. 3 is a diagram showing another embodiment.
【図4】従来例を示す図FIG. 4 shows a conventional example.
7・・・・・・パターン硬化装置 9・・・・・・ホットプレート(載置台、加熱装置) 10・・・・・・チャンバ 11・・・・・・紫外線ランプ(光源) 14・・・・・・半導体ウェハ 24a、24b・・・・・・導入窓(1組の平行板、温度設定
手段) 29・・・・・・上下移動機構(温度設定手段)7: Pattern hardening device 9: Hot plate (mounting table, heating device) 10: Chamber 11: Ultraviolet lamp (light source) 14: ... Semiconductor wafers 24a, 24b ... Introduction window (one set of parallel plates, temperature setting means) 29 ... Vertical moving mechanism (temperature setting means)
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/027 H01L 21/3065──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/027 H01L 21/3065
Claims (3)
導入窓及び前記被露光体を載置して加熱する加熱装置を
備えた載置台を設けたチャンバとを備えた露光装置にお
いて、前記導入窓の少なくとも内壁面は前記被露光体雰
囲気温度より高い温度に設定する温度設定手段を有する
ことを特徴とする露光装置。1. An exposure apparatus comprising: a light source for exposing an object to be exposed; and a chamber provided with a mounting table provided with a window for introducing the light and a heating device for mounting and heating the object to be exposed. , Wherein at least the inner wall surface of the introduction window has a temperature setting means for setting a temperature higher than the ambient temperature of the object to be exposed.
透過する1組の平行板から成る導入窓を備え、前記導入
窓間に温度調整した気体流を形成して成ることを特徴と
する請求項1記載の露光装置。2. The apparatus according to claim 1, wherein said temperature setting means includes an introduction window made of a set of parallel plates transmitting light from said light source, and a temperature-adjusted gas flow is formed between said introduction windows. The exposure apparatus according to claim 1, wherein
被露光体の非処理時に前記載置台を上昇させる上下移動
機構を設けたことを特徴とする請求項1記載の露光装
置。3. The exposure apparatus according to claim 1, wherein said temperature setting means includes a vertical movement mechanism for raising said mounting table when said object to be exposed is not processed by said light source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3033131A JP2854716B2 (en) | 1991-02-27 | 1991-02-27 | Exposure equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3033131A JP2854716B2 (en) | 1991-02-27 | 1991-02-27 | Exposure equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04273116A JPH04273116A (en) | 1992-09-29 |
JP2854716B2 true JP2854716B2 (en) | 1999-02-03 |
Family
ID=12378050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3033131A Expired - Fee Related JP2854716B2 (en) | 1991-02-27 | 1991-02-27 | Exposure equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2854716B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1229573A4 (en) | 1999-07-16 | 2006-11-08 | Nikon Corp | Exposure method and system |
TW563002B (en) * | 1999-11-05 | 2003-11-21 | Asml Netherlands Bv | Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method |
US7462841B2 (en) * | 2005-10-19 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and use of a radiation collector |
JP2012028621A (en) * | 2010-07-26 | 2012-02-09 | Tokuyama Corp | Measurement device for measuring variation in transmittance of sample due to repeated laser irradiation |
-
1991
- 1991-02-27 JP JP3033131A patent/JP2854716B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04273116A (en) | 1992-09-29 |
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