JP2853700B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2853700B2
JP2853700B2 JP9057719A JP5771997A JP2853700B2 JP 2853700 B2 JP2853700 B2 JP 2853700B2 JP 9057719 A JP9057719 A JP 9057719A JP 5771997 A JP5771997 A JP 5771997A JP 2853700 B2 JP2853700 B2 JP 2853700B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
opening
conductive adhesive
adhesive
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9057719A
Other languages
Japanese (ja)
Other versions
JPH10256441A (en
Inventor
千賀 掛川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP9057719A priority Critical patent/JP2853700B2/en
Publication of JPH10256441A publication Critical patent/JPH10256441A/en
Application granted granted Critical
Publication of JP2853700B2 publication Critical patent/JP2853700B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、放熱板を有する半
導体装置に関する。
The present invention relates to a semiconductor device having a heat sink.

【0002】[0002]

【従来の技術】半導体装置、例えばTBGA(Tape
Ball Grid Array)パッケージは図4
に示されるように、放熱板1が高熱伝導性金属、例えば
銅材などからなり、TABテープ3の半田バンプ搭載面
の裏面に、予め取り付けられた枠型補強板2を介して取
り付けられていた。半導体チップ6と放熱板1との接着
には、液状の高熱伝導性接着剤7が用いられていた。ま
た放熱板1には信頼性向上のため、半導体装置の製造工
程中あるいは実装時に、枠型補強板2の内側に侵入する
洗浄液等の水分を抜くため、また樹脂5や接着剤7等か
ら発生する水蒸気等の気体を外に逃がすために開口部8
が備えられることもあった。
2. Description of the Related Art Semiconductor devices such as TBGA (Tape)
Figure 4 shows the Ball Grid Array package.
As shown in FIG. 5, the heat radiating plate 1 is made of a high heat conductive metal, for example, a copper material, and is attached to the back surface of the solder bump mounting surface of the TAB tape 3 via the frame type reinforcing plate 2 previously attached. . A liquid high heat conductive adhesive 7 has been used for bonding the semiconductor chip 6 and the heat sink 1. In order to improve the reliability of the heat radiating plate 1, in order to remove moisture such as a cleaning liquid entering the inside of the frame-shaped reinforcing plate 2 during the manufacturing process or mounting of the semiconductor device, it is generated from the resin 5, the adhesive 7, and the like. Opening 8 to allow gas such as steam to escape
Was sometimes provided.

【0003】実際に半導体チップ6と放熱板1を接着さ
せるには、まず図4に示されるように半導体チップ6に
液状の高熱伝導性接着剤7を半導体チップ6と放熱板7
の間に間隙等が生じないように、半導体チップ6の裏面
に塗布する。このとき、高熱伝導性接着剤7の量が少な
いと、間隙(ボイド)が生じるため、張り合わせたとき
の半導体チップ6と高熱伝導性接着剤7との間の距離よ
り厚く塗布する。
In order to actually bond the semiconductor chip 6 and the heat sink 1, first, as shown in FIG. 4, a liquid high heat conductive adhesive 7 is applied to the semiconductor chip 6 and the heat sink 7.
It is applied to the back surface of the semiconductor chip 6 so that no gap or the like is generated between them. At this time, if the amount of the high thermal conductive adhesive 7 is small, a gap (void) is generated. Therefore, the adhesive is applied thicker than the distance between the semiconductor chip 6 and the high thermal conductive adhesive 7 when they are bonded together.

【0004】次に、この塗布面側から放熱板1が接着さ
れ、高熱伝導性接着剤7は半導体チップ6全面に押し広
げられる。この高熱伝導性接着剤7の押し広げられる面
積は、半導体チップ6と放熱板1との間の距離によって
変化する。
Next, the heat radiating plate 1 is bonded from the application surface side, and the high thermal conductive adhesive 7 is spread over the entire surface of the semiconductor chip 6. The area in which the high thermal conductive adhesive 7 is spread varies depending on the distance between the semiconductor chip 6 and the heat sink 1.

【0005】高熱伝導性接着剤7の塗布面積は、半導体
装置の熱抵抗に大きな影響を与えるため、製造時の接着
面積の管理は必要不可欠である。特に半導体チップ6の
サイズによって高熱伝導性接着剤7の接着面積をコント
ロールする必要があるため、高熱伝導性接着剤7の粘度
管理、塗布量の精度が高く要求される。
[0005] The application area of the high thermal conductive adhesive 7 has a great influence on the thermal resistance of the semiconductor device, so that the management of the adhesive area during manufacturing is indispensable. In particular, since it is necessary to control the bonding area of the high thermal conductive adhesive 7 depending on the size of the semiconductor chip 6, the viscosity control of the high thermal conductive adhesive 7 and the accuracy of the application amount are required to be high.

【0006】従来は、高熱伝導性接着剤7の塗布状況を
見るためには、X線検査装置を用いるか、あるいは半導
体装置を切断・研磨し、その断面構造の確認を行ってい
た。半導体装置組立時には、高熱伝導性接着剤7の塗布
量は、塗布重量を測定することにより簡易的に管理して
いた。
Conventionally, in order to check the state of application of the high thermal conductive adhesive 7, an X-ray inspection apparatus has been used or a semiconductor device has been cut and polished to check the cross-sectional structure thereof. At the time of assembling the semiconductor device, the applied amount of the high thermal conductive adhesive 7 was simply controlled by measuring the applied weight.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、図4に
示す従来の技術では、高熱伝導接着剤の塗布面積のばら
つきにより、製品の熱抵抗値がばらつくことを回避する
ため、高熱伝導性接着剤を必要以上に多く塗布する必要
があり、高熱伝導性接着剤の材料コストが高くなるとい
う課題があった。
However, in the prior art shown in FIG. 4, in order to avoid a variation in the thermal resistance value of the product due to a variation in the application area of the high thermal conductive adhesive, a high thermal conductive adhesive is used. There is a problem that it is necessary to apply more than necessary, and the material cost of the high thermal conductive adhesive increases.

【0008】具体的に説明すると、半導体チップと放熱
板との接着面積は前項で述べた通り、半導体チップと放
熱板との間の距離によって変化する。従来は接着剤塗布
時に重量を測定し、塗布量を簡易的に管理しているた
め、組立ロットの違いによって塗布面積が変化し、製品
の熱抵抗値にばらつきが生じていた。
More specifically, the bonding area between the semiconductor chip and the radiator plate varies depending on the distance between the semiconductor chip and the radiator plate, as described in the preceding section. Conventionally, since the weight is measured at the time of applying the adhesive and the amount of application is simply controlled, the application area changes depending on the assembly lot, and the thermal resistance value of the product varies.

【0009】ここで、塗布量の影響を見るために実験し
た結果を説明する。例えば、チップサイズ15×15m
mの熱抵抗を測定したところ、熱伝導性接着剤の塗布面
積がチップ面積の30%、50%、70%のとき、例え
ば風速1mの場合、塗布面積50%の熱抵抗値は、30
%の熱抵抗値と比較して約20%下がり、同様に塗布面
積70%の熱抵抗値は、30%の熱抵抗値と比較して約
30%下がることが確認された。以上より、塗布面積の
ばらつきにより、製品の熱抵抗値がばらつくことがわか
る。
Here, a description will be given of the results of an experiment conducted to see the effect of the coating amount. For example, chip size 15 × 15m
When the thermal resistance of the heat conductive adhesive was 30%, 50%, and 70% of the chip area, for example, when the wind speed was 1 m, the thermal resistance of the 50% applied area was 30%.
%, And it was confirmed that the thermal resistance of the coated area of 70% was reduced by about 30% as compared with the thermal resistance of 30%. From the above, it can be seen that the thermal resistance value of the product varies due to the variation of the application area.

【0010】従来の放熱板形状では、接着剤7の拡がり
を接着直後に目視確認することが不可能であり、塗布状
況を見るためには、接着剤の硬化後、半導体装置を切断
・研磨することにより、断面構造を確認したり、又はX
線検査しなければならないため、組立ロット毎に接着剤
の広がりを確認することは事実上不可能である。これに
加え、半導体チップ上のコーナー部には接着剤が拡がり
にくいため、あらかじめ塗布量を多くする必要があっ
た。
In the conventional heat sink shape, it is impossible to visually check the spread of the adhesive 7 immediately after bonding, and in order to check the application state, the semiconductor device is cut and polished after the adhesive is cured. By confirming the cross-sectional structure,
Since it is necessary to perform line inspection, it is practically impossible to confirm the spread of the adhesive for each assembly lot. In addition, since the adhesive does not easily spread to the corners on the semiconductor chip, it is necessary to increase the application amount in advance.

【0011】本発明の目的は、高熱伝導性接着剤の塗布
状態を放熱板の貼付直後に容易に目視確認できるように
した半導体装置を提供することにある。
It is an object of the present invention to provide a semiconductor device in which the state of application of a highly heat-conductive adhesive can be easily visually checked immediately after attaching a heat sink.

【0012】[0012]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体装置は、半導体チップと、放熱
板とを有する半導体装置であって、半導体チップは、放
熱板に熱伝導性接着剤により搭載されたものであり、放
熱板は、半導体チップに生ずる熱を拡散するものであっ
て、開口部を有し、開口部は、半導体チップの外周辺に
対応して開口され、半導体チップの外周辺付近での高温
伝導性接着剤の塗布状態を目視確認するものである。
To achieve the above object, a semiconductor device according to the present invention is a semiconductor device having a semiconductor chip and a heat sink, wherein the semiconductor chip is bonded to the heat sink by heat conductive bonding. A heat sink that diffuses heat generated in the semiconductor chip, has an opening, and the opening is opened corresponding to the outer periphery of the semiconductor chip; Is to visually confirm the state of application of the high-temperature conductive adhesive near the outer periphery.

【0013】[0013]

【作用】半導体チップは、放熱板に熱伝導性接着剤によ
り接着される。半導体チップの全面に熱伝導性接着剤が
塗布されていることが、半導体チップの熱を最大限に放
熱板に伝導する上で必要である。
The semiconductor chip is bonded to the heat sink with a heat conductive adhesive. It is necessary that the heat conductive adhesive is applied to the entire surface of the semiconductor chip in order to conduct the heat of the semiconductor chip to the radiator plate to the maximum.

【0014】そこで、本発明によれば、放熱板に接着さ
れる半導体チップの外周辺の位置に対応して放熱板に開
口部を設け、該開口部を通して熱伝導性接着剤の塗布状
態を目視確認するようにしたものである。
Therefore, according to the present invention, an opening is provided in the heat sink corresponding to the outer peripheral position of the semiconductor chip bonded to the heat sink, and the application state of the heat conductive adhesive is visually observed through the opening. It is something to check.

【0015】[0015]

【発明の実施の形態】以下、本発明の実施の形態を図に
より説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

【0016】(実施形態1)図1(a)は、本発明の実
施形態1を示す平面図、図1(b)は、(a)のA−
A’線断面図、図1(c)は、(b)のB−B’線断面
図である。
(Embodiment 1) FIG. 1A is a plan view showing Embodiment 1 of the present invention, and FIG.
FIG. 1C is a sectional view taken along the line BB ′ of FIG. 1B.

【0017】図1において、本発明の実施形態1に係る
半導体装置は、半導体チップ6と、放熱板1との組合せ
からなっている。
In FIG. 1, the semiconductor device according to the first embodiment of the present invention comprises a combination of a semiconductor chip 6 and a heat sink 1.

【0018】半導体チップ6の取付け構造について具体
的に説明する。放熱板1の一面には井桁状の枠型補強板
2が接合され、枠型補強板2の中央部には、放熱板1の
チップ搭載面1aを露出させる空間2aが形成されてい
る。半導体チップ6が実装されたTABテープ3が枠型
補強板2に接合され、その半導体チップ6が枠型補強板
2の空間2aに内装され、封止樹脂5で被覆されていな
い半導体チップ6の裏面が放熱板1のチップ搭載面1a
に熱伝導性接着剤7により接合され、半導体チップ6が
放熱板1に搭載されるようになっている。4は、TAB
テープ3の半田ボールである。
The mounting structure of the semiconductor chip 6 will be specifically described. A cross-shaped frame-shaped reinforcing plate 2 is joined to one surface of the heat radiating plate 1, and a space 2 a that exposes the chip mounting surface 1 a of the heat radiating plate 1 is formed in the center of the frame-shaped reinforcing plate 2. The TAB tape 3 on which the semiconductor chip 6 is mounted is joined to the frame-shaped reinforcing plate 2, and the semiconductor chip 6 is mounted in the space 2 a of the frame-shaped reinforcing plate 2 and is not covered with the sealing resin 5. The back surface is the chip mounting surface 1a of the heat sink 1.
The semiconductor chip 6 is mounted on the heat sink 1 by a heat conductive adhesive 7. 4 is TAB
These are solder balls of the tape 3.

【0019】さらに、放熱板1は、半導体チップ6の熱
を放熱するものであって、高熱伝導性金属、例えば銅合
金或いはステンレス、またはガラスエポキシ材などから
構成されている。
Further, the heat radiating plate 1 radiates heat of the semiconductor chip 6 and is made of a metal having a high thermal conductivity, for example, a copper alloy or stainless steel, or a glass epoxy material.

【0020】放熱板1は、必要に応じて角形或いは円形
等の開口部8を備えている。開口部8は、枠型補強板2
の空間2aのコーナー部に寄せて設けられ、開口部8
は、半導体装置の製造工程或いは基板実装時の洗浄等に
より枠型補強板2の空間2a内に侵入した水分や水蒸気
を容易に排出したり、さらには封止樹脂5や高熱伝導性
接着剤7を硬化させる際に生じる気体を外部に放出させ
るために設けたものである。そのため、開口部8は、開
口縁が封止樹脂5や高熱伝導性接着剤7によって閉塞さ
れないように、半導体チップ6の外縁から外側に引離し
た位置に配置して設けられている。
The heat radiating plate 1 is provided with a rectangular or circular opening 8 as required. The opening 8 is provided in the frame-type reinforcing plate 2.
The opening 8 is provided near the corner of the space 2a.
Is to easily discharge moisture or water vapor that has entered the space 2a of the frame-shaped reinforcing plate 2 by a manufacturing process of the semiconductor device or washing at the time of mounting the substrate, and furthermore, the sealing resin 5 or the high thermal conductive adhesive 7 It is provided to release a gas generated when the resin is cured to the outside. Therefore, the opening 8 is provided so as to be separated from the outer edge of the semiconductor chip 6 to the outside so that the opening edge is not closed by the sealing resin 5 or the high thermal conductive adhesive 7.

【0021】さらに本発明の実施形態1は、開口部8と
は別体の開口部9を放熱板1に設けたことを特徴とする
ものである。
Further, the first embodiment of the present invention is characterized in that an opening 9 separate from the opening 8 is provided in the heat sink 1.

【0022】開口部9は、半導体チップ6に対する高熱
伝導性接着剤7の塗布状態を目視確認するものであっ
て、放熱板1に接着される半導体チップ6の外周辺6a
の位置に対応して放熱板1に設けたものである。開口部
9は、半導体チップ6の4辺全ての外周辺6aに対応し
て設けることが望ましく、さらには開口部9の寸法は、
熱拡散効率を損なわないようにするため、その開口幅を
加工が容易な限り狭く、開口長さを半導体チップ6の1
辺の外周辺6aの長さの3分の1程度にすることが望ま
しい。
The opening 9 is for visually confirming the state of application of the high thermal conductive adhesive 7 to the semiconductor chip 6, and the outer periphery 6 a of the semiconductor chip 6 adhered to the heat sink 1.
Are provided on the heat radiating plate 1 corresponding to the positions of. The openings 9 are desirably provided in correspondence with the outer periphery 6a of all four sides of the semiconductor chip 6, and the dimensions of the openings 9 are
In order not to impair the heat diffusion efficiency, the width of the opening is as narrow as possible and the length of the opening is one of the semiconductor chips 6.
It is desirable that the length be about one third of the length of the outer periphery 6a of the side.

【0023】さらに開口部9は、放熱板1の開口部8,
8を結ぶ対角線L1,L2上を避けた位置に設け、高熱伝
導性接着剤7が対角線L1,L2の方向に広がりをもって
塗布されるようになっている。
Further, the opening 9 is provided with the opening 8,
The high thermal conductive adhesive 7 is provided at a position avoiding the diagonal lines L 1 and L 2 connecting the high-concentration lines 8 and spreads in the diagonal lines L 1 and L 2 .

【0024】したがって、本発明の実施形態1によれ
ば、放熱板1のチップ搭載面1aに半導体チップ6を高
熱伝導性接着剤7により搭載した場合、接着剤7は、半
導体チップ6の裏面に沿って外周辺6a側に広がり、開
口部9内に侵入する。
Therefore, according to the first embodiment of the present invention, when the semiconductor chip 6 is mounted on the chip mounting surface 1a of the heat radiating plate 1 with the high thermal conductive adhesive 7, the adhesive 7 Along the outer periphery 6 a side, and penetrates into the opening 9.

【0025】本発明の実施形態1では、開口部9を通し
て半導体チップ6に対する接着剤7の塗布状態を目視確
認する。接着剤7が開口部9内に食い込んでいれば、半
導体チップ6の裏面全体に接着剤7が塗布されているこ
ととなり、一部の開口部9内に接着剤7が食い込んで充
填されていなければ、半導体チップ6の裏面での接着剤
7が不足していることが目視確認される。
In the first embodiment of the present invention, the state of application of the adhesive 7 to the semiconductor chip 6 through the opening 9 is visually checked. If the adhesive 7 penetrates into the opening 9, it means that the adhesive 7 has been applied to the entire back surface of the semiconductor chip 6, and the adhesive 7 must penetrate and fill some of the openings 9. For example, it is visually confirmed that the adhesive 7 on the back surface of the semiconductor chip 6 is insufficient.

【0026】さらに半導体チップ6の外周辺6aに対応
して開口部9が設けられているため、接着剤7が余剰で
あったとしても、一部が開口部9内に吸収されることと
なり、半導体チップ6の外周辺6aを越えて接着剤7が
はみ出して塗布されることがなくなる。
Further, since the opening 9 is provided corresponding to the outer periphery 6a of the semiconductor chip 6, even if the adhesive 7 is excessive, a part thereof is absorbed into the opening 9, The adhesive 7 does not protrude beyond the outer periphery 6a of the semiconductor chip 6 and is not applied.

【0027】また、開口部9は、半導体チップ6のコー
ナー部を避けて設けられているため、接着剤7が半導体
チップ6のコーナー部に向けて広がり、半導体チップ6
への接着剤7の塗布面積を拡大して熱拡散効率を高める
ことができる。
Since the opening 9 is provided so as to avoid the corner of the semiconductor chip 6, the adhesive 7 spreads toward the corner of the semiconductor chip 6, and
The area of application of the adhesive 7 to the adhesive can be increased to increase the heat diffusion efficiency.

【0028】図1に示す実施形態1には、放熱板1に角
形或いは円形等の開口部8を設けた例を示したが、図3
に示すように実施形態1は、放熱板1に開口部8を設け
ない構造のものにも同様に適用することができる。すな
わち、放熱板1は、必要に応じて角形或いは円形等の開
口部8を備えていればよく、必ずしも開口部8を備えて
いることが本発明の実施形態1による効果を発揮するた
めの要件ではない。
The first embodiment shown in FIG. 1 shows an example in which the heat dissipation plate 1 is provided with an opening 8 having a rectangular or circular shape.
As described above, the first embodiment can be similarly applied to a structure in which the opening 8 is not provided in the heat sink 1. That is, the heat radiating plate 1 only needs to have a rectangular or circular opening 8 as required, and the heat radiating plate 1 does not necessarily have to have the opening 8 in order to exhibit the effect of the first embodiment of the present invention. is not.

【0029】(実施形態2)図2(a)は、本発明の実
施形態2を示す平面図、図2(b)は、(a)のA−
A’線断面図、(c)は、(a)のB−B’線断面図で
ある。
(Embodiment 2) FIG. 2A is a plan view showing Embodiment 2 of the present invention, and FIG.
FIG. 3A is a sectional view taken along line A ′, and FIG. 3C is a sectional view taken along line BB ′ in FIG.

【0030】図2に示す本発明の実施形態2は、半導体
チップ6のコーナー部から枠型補強板2の空間2aのコ
ーナー部に向けて細長の開口部10を設けたものであ
る。
In the second embodiment of the present invention shown in FIG. 2, an elongated opening 10 is provided from the corner of the semiconductor chip 6 to the corner of the space 2a of the frame-shaped reinforcing plate 2.

【0031】本発明の実施形態2に係る開口部10は、
図1に示した実施形態1に係る開口部8と9両方の機能
を有するものである。つまり、実施形態2に係る開口部
10のうち、半導体チップ6より外側の開口部分は、熱
伝導性接着剤7の塗布状態を目視監視する機能に加え
て、半導体装置製造工程あるいは基板実装時の洗浄等に
より放熱板1の下に入り込んだ水分や水蒸気を容易に排
出させ、また封止樹脂5や高熱伝導性接着剤7を硬化さ
せるときに生じる気体を外部に放出させる機能をも有し
ている。さらに半導体チップ6上に位置する開口部10
は、熱伝導性接着剤7の塗布量を目視で確認する機能を
有している。
The opening 10 according to the second embodiment of the present invention
It has both functions of the openings 8 and 9 according to the first embodiment shown in FIG. In other words, of the openings 10 according to the second embodiment, the opening outside the semiconductor chip 6 has a function of visually monitoring the application state of the heat conductive adhesive 7, and also has a function during a semiconductor device manufacturing process or during board mounting. It has a function of easily discharging moisture or water vapor that has entered under the heat radiating plate 1 by washing or the like, and releasing a gas generated when the sealing resin 5 or the high thermal conductive adhesive 7 is cured to the outside. I have. Further, the opening 10 located on the semiconductor chip 6
Has a function of visually confirming the applied amount of the heat conductive adhesive 7.

【0032】開口部10を設ける際、開口部内端の半導
体チップ6上に当たる部分の位置は、熱伝導性接着剤7
を塗布する必要がある範囲の少なくとも最外周に重なる
ように設ける必要がある。ただし、熱拡散効率の低下を
防ぐため開口寸法は、加工が可能な限り小さくことが望
ましい。
When the opening 10 is provided, the position of the portion of the inner end of the opening that contacts the semiconductor chip 6 is determined by the heat conductive adhesive 7.
Must be provided so as to overlap at least the outermost periphery of the range where the application is required. However, in order to prevent a decrease in the heat diffusion efficiency, it is desirable that the opening size is as small as possible.

【0033】また、実施形態2に係る開口部10は、図
1に示した開口部9が有する機能のうち、接着剤7の広
がりを抑える効果はないが、開口部の形状が実施形態1
のものに比べて単純であるため、放熱板加工時の低コス
ト化を図ることができる。また、半導体チップ6上の放
熱板1の開口部10は、コーナー部のみに位置するた
め、熱拡散効率の低下を防止することができるという利
点を有している。
The opening 10 according to the second embodiment does not have the effect of suppressing the spread of the adhesive 7 among the functions of the opening 9 shown in FIG.
Since it is simpler than that of the heat sink, the cost can be reduced when processing the heat sink. Further, since the opening 10 of the heat radiating plate 1 on the semiconductor chip 6 is located only at the corner, there is an advantage that a decrease in heat diffusion efficiency can be prevented.

【0034】[0034]

【発明の効果】以上説明したように本発明によれば、熱
伝導性接着剤の過塗布をなくすことができる。この理由
は、従来重量で簡易的に管理していた接着剤の塗布量
を、組立ロット毎に塗布範囲を目視で容易に確認でき、
接着剤の塗布面積を定量化することができるためであ
る。
As described above, according to the present invention, overapplication of the heat conductive adhesive can be eliminated. The reason for this is that the application amount of the adhesive, which was conventionally simply controlled by weight, can be easily confirmed visually by visualizing the application range for each assembly lot.
This is because the application area of the adhesive can be quantified.

【0035】さらに、半導体チップのコーナー部に接着
剤を広げて塗布することができる。その理由は、目視確
認用の開口部の位置を最適化することにより、接着剤の
広がりを円形から四角形に近い形に広げることができる
ためである。
Further, the adhesive can be spread and applied to the corners of the semiconductor chip. The reason is that by optimizing the position of the opening for visual confirmation, the spread of the adhesive can be expanded from a circle to a shape close to a square.

【0036】さらに、熱伝導性接着剤の材料コストを削
減できる。その理由は、従来多めに塗布していた接着剤
を最適な量に減らすことができるためである。
Further, the material cost of the heat conductive adhesive can be reduced. The reason for this is that the amount of adhesive that has been conventionally applied in a large amount can be reduced to an optimum amount.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は、本発明の実施形態1を示す平面図、
(b)は、(a)のA−A’線断面図、(c)は、
(a)のB−B’線断面図である。
FIG. 1A is a plan view showing a first embodiment of the present invention,
(B) is a cross-sectional view taken along the line AA ′ of (a), (c) is
It is a BB 'line sectional view of (a).

【図2】(a)は、本発明の実施形態2を示す平面図、
(b)は、(a)のA−A’線断面図、(c)は、
(a)のB−B’線断面図である。
FIG. 2A is a plan view showing a second embodiment of the present invention,
(B) is a cross-sectional view taken along the line AA ′ of (a), (c) is
It is a BB 'line sectional view of (a).

【図3】(a)は、本発明の実施形態1の変形例を示す
平面図、(b)は、(a)のA−A’線断面図、(c)
は、(a)のB−B’線断面図である。
3A is a plan view showing a modification of the first embodiment of the present invention, FIG. 3B is a cross-sectional view taken along line AA ′ of FIG. 3A, and FIG.
FIG. 3A is a cross-sectional view taken along line BB ′ of FIG.

【図4】(a)は、従来例を示す平面図、(b)は、
(a)のA−A’線断面図、(c)は、(a)のB−
B’線断面図である。
FIG. 4A is a plan view showing a conventional example, and FIG.
(A) is a cross-sectional view taken along line AA ′, and (c) is a cross-sectional view taken along line B- in (a).
It is a sectional view taken on the line B '.

【図5】(a)は、別の従来例を示す平面図、(b)
は、(a)のA−A’線断面図、(c)は、(a)のB
−B’線断面図である。
FIG. 5A is a plan view showing another conventional example, and FIG.
Is a cross-sectional view taken along the line AA ′ of (a), and (c) is a cross-sectional view of B of (a).
FIG. 4 is a sectional view taken along line -B ′.

【符号の説明】[Explanation of symbols]

1 放熱板 1a チップ搭載面 2 枠型補強板 2a 空間 3 TABテープ 4 半田ボール 5 封止樹脂 6 半導体チップ 6a 半導体チップの外周辺 7 熱伝導性接着剤 8 開口部 9 開口部 10 開口部 DESCRIPTION OF SYMBOLS 1 Heat sink 1a Chip mounting surface 2 Frame type reinforcing plate 2a Space 3 TAB tape 4 Solder ball 5 Sealing resin 6 Semiconductor chip 6a Outer periphery of semiconductor chip 7 Thermal conductive adhesive 8 Opening 9 Opening 10 Opening

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体チップと、放熱板とを有する半導
体装置であって、 半導体チップは、放熱板に熱伝導性接着剤により搭載さ
れたものであり、 放熱板は、半導体チップに生ずる熱を拡散するものであ
って、開口部を有し、 開口部は、半導体チップの外周辺に対応して開口され、
半導体チップの外周辺付近での高温伝導性接着剤の塗布
状態を目視確認するものであることを特徴とする半導体
装置。
1. A semiconductor device having a semiconductor chip and a radiator plate, wherein the semiconductor chip is mounted on the radiator plate with a thermally conductive adhesive, and the radiator plate removes heat generated in the semiconductor chip. Having an opening, the opening corresponding to the outer periphery of the semiconductor chip,
A semiconductor device for visually confirming a state of application of a high-temperature conductive adhesive near an outer periphery of a semiconductor chip.
JP9057719A 1997-03-12 1997-03-12 Semiconductor device Expired - Lifetime JP2853700B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9057719A JP2853700B2 (en) 1997-03-12 1997-03-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9057719A JP2853700B2 (en) 1997-03-12 1997-03-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH10256441A JPH10256441A (en) 1998-09-25
JP2853700B2 true JP2853700B2 (en) 1999-02-03

Family

ID=13063764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9057719A Expired - Lifetime JP2853700B2 (en) 1997-03-12 1997-03-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2853700B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4673949B2 (en) * 1999-11-12 2011-04-20 富士通株式会社 Semiconductor unit and manufacturing method thereof
JP2002039967A (en) * 2000-07-28 2002-02-06 Mitsui Mining & Smelting Co Ltd Method and apparatus for inspecting film carrier tape for mounting electronic part
JP5378345B2 (en) * 2010-12-09 2013-12-25 株式会社日立産機システム Permanent magnet motor and manufacturing method thereof
JP6252550B2 (en) 2014-07-31 2017-12-27 株式会社デンソー Electronic device, driving device using the same, and method of manufacturing electronic device
US20220223558A1 (en) * 2019-08-27 2022-07-14 Mitsubishi Electric Corporation Semiconductor device
JP6964734B1 (en) * 2020-09-08 2021-11-10 三菱電機株式会社 Rotating machine

Also Published As

Publication number Publication date
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