JP2852992B2 - Inspection method of overheat protection function of semiconductor device - Google Patents
Inspection method of overheat protection function of semiconductor deviceInfo
- Publication number
- JP2852992B2 JP2852992B2 JP35313792A JP35313792A JP2852992B2 JP 2852992 B2 JP2852992 B2 JP 2852992B2 JP 35313792 A JP35313792 A JP 35313792A JP 35313792 A JP35313792 A JP 35313792A JP 2852992 B2 JP2852992 B2 JP 2852992B2
- Authority
- JP
- Japan
- Prior art keywords
- protection function
- overheat protection
- temperature
- semiconductor device
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の過熱保護
機能の検査方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting an overheat protection function of a semiconductor device.
【０００２】[0002]
【従来の技術】従来、直流安定化電源装置（シリーズレ
ギュレーター）等には、所定の温度にまで過熱されると
自動的に出力を停止する過熱保持機能を有しているもの
がある。この過熱保護機能の出荷時の検査は、以下のよ
うにして行われる。すなわち、直流安定化電源装置を高
温ハンドリング装置で過熱保護機能が作動する最下限温
度に加熱するとともにテスターで過熱保護機能が作動し
ないことを確認する。その後、直流安定化電源装置を上
限温度にまで加熱して過熱保護機能が作動することを確
認する。2. Description of the Related Art Conventionally, some DC stabilized power supplies (series regulators) and the like have an overheat holding function of automatically stopping output when heated to a predetermined temperature. The inspection at the time of shipment of the overheat protection function is performed as follows. That is, the DC stabilized power supply is heated to the minimum temperature at which the overheat protection function is activated by the high-temperature handling device, and it is confirmed that the overheat protection function is not activated by the tester. Then, heat the DC stabilized power supply to the upper limit temperature and confirm that the overheat protection function is activated.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上述し
た従来の半導体装置の過熱保護機能の検査方法では、２
台の高温ハンドリング装置を使用するか、もくしは１台
の高温ハンドリング装置の設定を変更して２回の検査を
行わなければならない。However, in the above-mentioned conventional method for inspecting the overheat protection function of a semiconductor device, two methods are known.
Either two high temperature handling devices must be used or the settings of one high temperature handling device must be changed and two inspections performed.
【０００４】本発明は上記事情に鑑みて創案されたもの
で、１台の高温ハンドリング装置で設定を変更すること
なく過熱保護機能の検査を行うことができる半導体装置
の過熱保護機能の検査方法を提供することを目的として
いる。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides an inspection method of an overheat protection function of a semiconductor device in which an inspection of an overheat protection function can be performed without changing a setting by one high temperature handling apparatus. It is intended to provide.
【０００５】[0005]
【課題を解決するための手段】本発明に係る半導体装置
の過熱保護機能の検査方法は、予め設定された規定温度
にまで過熱されると出力を停止する半導体装置の過熱保
護機能の検査方法であって、規定温度があるべき許容範
囲の下限温度にまで高温ハンドリング装置で半導体装置
を加熱するとともに、その下限温度では過熱保護機能が
作動しないことを確認する工程と、その後、半導体装置
を作動させて前記許容温度の上限温度にまで自己発熱さ
せて過熱保護機能が作動することを確認する工程とを有
している。An overheat protection function of a semiconductor device according to the present invention is an inspection method of an overheat protection function of a semiconductor device which stops output when it is heated to a predetermined temperature. A step of heating the semiconductor device with the high-temperature handling device to the lower limit of the allowable range where the specified temperature should be, and confirming that the overheat protection function does not operate at the lower limit temperature, and then operating the semiconductor device. And self-heating to the upper limit temperature of the allowable temperature to confirm that the overheat protection function is activated.
【０００６】[0006]
【実施例】図１は本発明の一実施例に係る半導体装置の
過熱保護機能の検査方法における半導体に対する電力印
加時間と温度上昇との関係を示すグラフ、図２はこの半
導体装置の過熱保護機能の検査方法の手順を示すタイミ
ングチャート、図３はこの半導体装置の過熱保護機能の
検査方法で検査される直流安定化電源装置の等価回路図
である。FIG. 1 is a graph showing the relationship between power application time and temperature rise to a semiconductor in a method for testing the overheat protection function of a semiconductor device according to one embodiment of the present invention, and FIG. 2 is a graph showing the overheat protection function of this semiconductor device. FIG. 3 is an equivalent circuit diagram of a stabilized DC power supply which is inspected by the inspection method of the overheat protection function of the semiconductor device.
【０００７】なお、以下の説明では、半導体装置の例と
して直流安定化電源装置を挙げるが、本発明はこれに限
定されることなく、過熱保護機能を有するすべての半導
体装置に適応可能なものである。この直流安定化電源装
置は、図３に示すように過熱保護回路を有している。こ
の過熱保護回路は、予め設定された規定温度にまで過熱
されると出力を停止する過熱保護機能を有するものであ
る。In the following description, a DC stabilized power supply will be described as an example of a semiconductor device. However, the present invention is not limited to this, and is applicable to all semiconductor devices having an overheat protection function. is there. This DC stabilized power supply device has an overheat protection circuit as shown in FIG. This overheat protection circuit has an overheat protection function of stopping output when the temperature is overheated to a preset specified temperature.
【０００８】本実施例に係る過熱保護機能の検査方法
は、予め設定された規定温度にまで過熱されると出力を
停止する直流安定化電源装置の過熱保護機能の検査方法
であって、規定温度があるべき許容範囲の下限温度にま
で高温ハンドリング装置で直流安定化電源装置を加熱す
るとともに、その下限温度では過熱保護機能が作動しな
いことを確認する工程と、その後、直流安定化電源装置
に電力Ｐd を印加して作動させて前記許容温度の上限温
度にまで自己発熱させて過熱保護機能が作動することを
確認する工程とを有している。The inspection method of the overheat protection function according to the present embodiment is an inspection method of the overheat protection function of the DC stabilized power supply which stops the output when it is overheated to a predetermined temperature. Heating the DC stabilized power supply with the high-temperature handling device to the lower limit of the allowable range, confirming that the overheat protection function does not operate at the lower limit temperature, and then supplying power to the DC stabilized power supply. A step of applying Pd to operate to self-heat to the upper limit temperature of the allowable temperature and confirming that the overheat protection function operates.
【０００９】ここで、検査対象たる直流安定化電源装置
の過熱保護機能の規定温度が１５０℃、規定温度の許容
範囲が１４０℃〜１６０℃であるとし、直流安定化電源
装置のジャンクションと周囲空間との間の熱抵抗θ(j−
a)が５０℃／Ｗであるとすると、電力印加時間ｔ(sec)
と電力による直流安定化電源装置の温度上昇ΔＴｊ
（℃) との関係は図１に示すような関係となる。Here, it is assumed that the specified temperature of the overheat protection function of the DC stabilized power supply to be inspected is 150.degree. C., and that the allowable range of the specified temperature is 140.degree. C. to 160.degree. Thermal resistance θ (j−
Assuming that a) is 50 ° C./W, the power application time t (sec)
Temperature rise ΔTj of DC stabilized power supply due to power and electric power
(° C.) is as shown in FIG.
【００１０】すなわち、直流安定化電源装置に印加され
る電力Ｐd(Ｗ）は、直流安定化電源装置の入力と出力と
の電圧差であるＶi-0 と、出力電流であるＩ0 との積で
あるＶi-0 ×Ｉ0 で表される。また、ジャンクションと
周囲空間との間の熱抵抗をθ(j−a)とし、電力印加時間
ｔとすると、直流安定化電源装置の温度上昇ΔＴｊは、
θ(j−a)×Ｐd(１−e -0.02t）で表される。That is, the power Pd (W) applied to the stabilized DC power supply is determined by the difference between the voltage difference Vi -0 between the input and the output of the stabilized DC power supply and the output current I0 . It is represented by the product V i-0 × I 0 . Further, assuming that the thermal resistance between the junction and the surrounding space is θ (j−a) and the power application time is t, the temperature rise ΔTj of the DC stabilized power supply is:
θ (j−a) × Pd (1−e− 0.02t ).
【００１１】さらに、電力Ｐd を２０Ｗとすると、電力
Ｐd を印加してから０．５秒後には直流安定化電源装置
の温度は１０℃上昇し、１秒後には２０℃上昇すること
が図１から判明する。ここで、２０℃は許容温度１４０
℃〜１６０℃の下限温度１４０℃と上限温度１６０℃と
の差である。Further, assuming that the power Pd is 20 W, the temperature of the stabilized DC power supply rises by 10 ° C. 0.5 seconds after the application of the power Pd, and rises by 20 ° C. one second later. It turns out from. Here, 20 ° C. is the allowable temperature 140
It is the difference between the lower limit temperature of 140 ° C and the upper limit temperature of 160 ° C.
【００１２】このような直流安定化電源装置の過熱保護
機能の検査の手順について図２を参照しつつ説明する。
まず、直流安定化電源装置を高温ハンドリング装置で規
定温度の許容温度の下限温度である１４０℃に加熱し
て、その状態で直流安定化電源装置の過熱保護機能が作
動しないことを確認する。The procedure for testing the overheat protection function of such a stabilized DC power supply will be described with reference to FIG.
First, the stabilized DC power supply is heated to 140 ° C. which is the lower limit of the allowable temperature of the specified temperature by the high-temperature handling device, and it is confirmed that the overheat protection function of the stabilized DC power supply does not operate in that state.
【００１３】高温ハンドリング装置で直流安定化電源装
置を１４０℃に加熱した時点で、過熱保護機能が作動し
たならば、過熱保護機能の規定温度は許容範囲１４０℃
〜１６０℃より低くなっていることになり、不良品とし
て排除することができる。If the overheat protection function is activated when the DC stabilized power supply is heated to 140 ° C. by the high-temperature handling device, the specified temperature of the overheat protection function is within the allowable range of 140 ° C.
The temperature is lower than １６０160 ° C., which can be excluded as a defective product.
【００１４】さらに、電力Ｐｄを直流安定化電源装置に
印加する。すると、上述したように、直流安定化電源装
置の温度は０．５秒後には１０℃上昇して１５０℃にな
る。すると、この時点で過熱保護機能が作動して出力が
停止される。Further, the power Pd is applied to a stabilized DC power supply. Then, as described above, the temperature of the stabilized DC power supply increases by 10 ° C. after 0.5 second to 150 ° C. Then, at this point, the overheat protection function is activated and the output is stopped.
【００１５】電力Ｐｄを印加した０．５秒後に過熱保護
機能が作動したならば、過熱保護機能の規定温度は予め
設定された１５０℃に一致しているので、この直流安定
化電源装置は良品として出荷することができる。If the overheat protection function is activated 0.5 seconds after the application of the power Pd, the specified temperature of the overheat protection function matches the preset 150 ° C. Can be shipped as
【００１６】０．５秒後に過熱保護機能が作動しなくと
も、その０．５秒後、すなわち電力Ｐｄを印加してから
１秒経過するまでに過熱保護機能が作動したならば、規
定温度は許容範囲１４０℃〜１６０℃内にあるので、こ
の直流安定化電源装置は良品として出荷することができ
る。Even if the overheat protection function does not operate after 0.5 seconds, if the overheat protection function operates 0.5 seconds later, that is, 1 second after the application of the power Pd, the specified temperature becomes Since the temperature is within the allowable range of 140 ° C. to 160 ° C., this DC stabilized power supply can be shipped as a good product.
【００１７】電力Ｐｄを印加してから１秒経過しても、
過熱保護機能が作動しなければ、規定温度は許容範囲１
４０℃〜１６０℃より高くなっているので、この直流安
定化電源装置は不良品として排除することができる。Even if one second has passed since the application of the power Pd,
If the overheat protection function does not operate, the specified temperature is within the allowable range 1
Since the temperature is higher than 40 ° C. to 160 ° C., this DC stabilized power supply can be excluded as a defective product.
【００１８】なお、上述した直流安定化電源装置では、
規定温度を１５０℃、許容温度を１４０℃〜１６０℃と
したが、本発明がこれに限定されることがないのは勿論
である。また、直流安定化電源装置に限らず、他の種類
の半導体装置にも本発明に係る半導体装置の過熱保護機
能の検査方法を適用することができる。In the above-described DC stabilized power supply,
Although the specified temperature was set to 150 ° C. and the allowable temperature was set to 140 ° C. to 160 ° C., it goes without saying that the present invention is not limited to this. Further, the method of testing the overheat protection function of a semiconductor device according to the present invention can be applied not only to the DC stabilized power supply device but also to other types of semiconductor devices.
【００１９】[0019]
【発明の効果】本発明に係る半導体装置の過熱保護機能
の検査方法は、予め設定された規定温度にまで過熱され
ると出力を停止する半導体装置の過熱保護機能の検査方
法であって、規定温度があるべき許容範囲の下限温度に
まで高温ハンドリング装置で半導体装置を加熱するとと
もに、その下限温度では過熱保護機能が作動しないこと
を確認する工程と、その後、半導体装置を作動させて前
記許容温度の上限温度にまで自己発熱させて過熱保護機
能が作動することを確認する工程とを有している。従っ
て、１台の高温ハンドリング装置で、過熱保護機能の規
定温度が許容範囲内にあるか否かを検査することができ
るので、工数の低減、手番の短縮或いはコストダウン等
に寄与することができる。The inspection method of the overheat protection function of the semiconductor device according to the present invention is an inspection method of the overheat protection function of the semiconductor device which stops the output when the semiconductor device is overheated to a predetermined temperature. Heating the semiconductor device with the high-temperature handling device up to the lower limit of the allowable temperature range, and confirming that the overheat protection function does not operate at the lower limit temperature; And confirming that the overheat protection function is activated by self-heating up to the upper limit temperature. Therefore, it is possible to inspect whether or not the specified temperature of the overheat protection function is within an allowable range with one high-temperature handling device, which contributes to a reduction in man-hours, a reduction in the number of steps, a cost reduction, and the like. it can.
【図１】本発明の一実施例に係る半導体装置の過熱保護
機能の検査方法における半導体に対する電力印加時間と
温度上昇との関係を示すグラフである。FIG. 1 is a graph showing a relationship between a power application time to a semiconductor and a temperature rise in a method for testing an overheat protection function of a semiconductor device according to an embodiment of the present invention.
【図２】この半導体装置の過熱保護機能の検査方法の手
順を示すタイミングチャートである。FIG. 2 is a timing chart showing a procedure of an inspection method of an overheat protection function of the semiconductor device.
【図３】この半導体装置の過熱保護機能の検査方法で検
査される直流安定化電源装置の等価回路図である。FIG. 3 is an equivalent circuit diagram of a stabilized DC power supply which is inspected by the method for inspecting an overheat protection function of a semiconductor device.
Claims (1)
ると出力を停止する半導体装置の過熱保護機能の検査方
法であって、規定温度があるべき許容範囲の下限温度に
まで高温ハンドリング装置で半導体装置を加熱するとと
もに、その下限温度では過熱保護機能が作動しないこと
を確認する工程と、その後、半導体装置を作動させて前
記許容温度の上限温度にまで自己発熱させて過熱保護機
能が作動することを確認する工程とを具備したことを特
徴とする半導体装置の過熱保護機能の検査方法。An inspection method for an overheat protection function of a semiconductor device, wherein the output is stopped when the semiconductor device is overheated to a preset specified temperature, wherein the specified temperature reaches a lower limit temperature of an allowable range by a high-temperature handling device. Heating the semiconductor device and confirming that the overheat protection function does not operate at the lower limit temperature, and thereafter, activating the semiconductor device to self-heat to the upper limit temperature of the allowable temperature to activate the overheat protection function. A method for inspecting an overheat protection function of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35313792A JP2852992B2 (en) | 1992-12-11 | 1992-12-11 | Inspection method of overheat protection function of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35313792A JP2852992B2 (en) | 1992-12-11 | 1992-12-11 | Inspection method of overheat protection function of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06180341A JPH06180341A (en) | 1994-06-28 |
| JP2852992B2 true JP2852992B2 (en) | 1999-02-03 |
Family
ID=18428810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35313792A Expired - Fee Related JP2852992B2 (en) | 1992-12-11 | 1992-12-11 | Inspection method of overheat protection function of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2852992B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6758201B2 (en) * | 2017-01-05 | 2020-09-23 | 三菱電機株式会社 | Inspection jig and semiconductor device inspection method |
| WO2020062236A1 (en) | 2018-09-30 | 2020-04-02 | Oppo广东移动通信有限公司 | Test method and apparatus for adapter, and device and storage medium |
-
1992
- 1992-12-11 JP JP35313792A patent/JP2852992B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06180341A (en) | 1994-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6647310B1 (en) | Temperature control of an integrated circuit | |
| JPH06201771A (en) | Electronic-device processing method using microwave radiation | |
| JP2852992B2 (en) | Inspection method of overheat protection function of semiconductor device | |
| US6956391B2 (en) | Testing method for electronic component and testing device | |
| JP2004502941A (en) | Automatic protection of IC devices from EOS (Electro Overstress) damage due to unwanted DC transients | |
| US4962294A (en) | Method and apparatus for causing an open circuit in a conductive line | |
| US6577146B2 (en) | Method of burning in an integrated circuit chip package | |
| JP2008170194A (en) | Test method of electronic device, tester of electronic device, and test system of electronic device | |
| JP2006138711A (en) | High temperature inspection method of semiconductor device | |
| Armani et al. | Thermic: a hardened temperature controller for regenerating cmos circuits exposed to ionizing radiation | |
| JP2007121245A (en) | Probe card | |
| JPS58155375A (en) | Voltage applied high temperature continuous testing of semiconductor device | |
| EP0105003A1 (en) | Method of screening resin-sealed semiconductor devices | |
| Bin et al. | Study of highly accelerated thermal cycling test for DC/DC converter | |
| KR200194289Y1 (en) | Burn-in system in test equipment of semiconductor chip | |
| JP3372029B2 (en) | Semiconductor integrated circuit test apparatus and its recovery method at the time of failure | |
| JP2023005270A (en) | Electronic component testing device | |
| JPH0688856A (en) | Method and device for testing semiconductor device | |
| JP3177179B2 (en) | Control method of ceramic heater | |
| JPS59202478A (en) | Abnormality detecting method of temperature controller | |
| JP2001343420A (en) | Burn-in testing equipment and method thereof | |
| JP2000298156A (en) | Method for inspecting semiconductor device | |
| JPS5880844A (en) | Screening method for semiconductor device | |
| JP2002151368A (en) | Method for manufacturing and measuring capacitor | |
| JPH05235129A (en) | Inspection method of semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20081120 |
|
| LAPS | Cancellation because of no payment of annual fees |