JP2842876B2 - Plasma dispersion plate - Google Patents
Plasma dispersion plateInfo
- Publication number
- JP2842876B2 JP2842876B2 JP63304586A JP30458688A JP2842876B2 JP 2842876 B2 JP2842876 B2 JP 2842876B2 JP 63304586 A JP63304586 A JP 63304586A JP 30458688 A JP30458688 A JP 30458688A JP 2842876 B2 JP2842876 B2 JP 2842876B2
- Authority
- JP
- Japan
- Prior art keywords
- dispersion plate
- plasma
- protective film
- substrate
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明はシリコンウエハのプラズマエッチングに使
用される分散板に関する。Description: TECHNICAL FIELD The present invention relates to a dispersion plate used for plasma etching of a silicon wafer.
一般に、シリコンウエハのプラズマエッチングを行う
場合には、反応容器内に設けた電極上にシリコンウエハ
を載置すると共に、そのウエハの上方には、電極を備え
た分散板を配置し、反応容器中にエッチング用ガスを供
給しながら、前記両電極に高周波電圧を印加することに
より、プラズマを分散板によって反応容器内に分散させ
ながらシリコンウエハの表面に均一に供給するようにし
ている。In general, when performing plasma etching of a silicon wafer, a silicon wafer is placed on an electrode provided in a reaction vessel, and a dispersion plate provided with an electrode is arranged above the wafer, and the silicon wafer is placed in the reaction vessel. By applying a high-frequency voltage to the two electrodes while supplying an etching gas to the substrate, the plasma is uniformly supplied to the surface of the silicon wafer while being dispersed in the reaction vessel by the dispersion plate.
ところが、上記分散板を長期間使用していると、分散
板の被プラズマ処理物と対向する側面が局部的に浸食さ
れて窪みが生じ、この窪みが所定の値に達すると機能低
下を招くという問題があった。However, when the dispersion plate is used for a long period of time, the side surface of the dispersion plate facing the object to be plasma-treated is locally eroded to form a depression, and when the depression reaches a predetermined value, the function is reduced. There was a problem.
この発明は上記の課題を解決するためになされたもの
であって、その目的はプラズマに対する耐久性を向上さ
せて、寿命を長くすることが可能なプラズマ分散板を提
供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a plasma dispersion plate capable of improving the durability against plasma and extending the life.
上記の目的を達成するために、この発明では炭化珪素
焼結体からなる基材に、プラズマに対する耐浸食性を向
上させるべく基材と同一組成を有すると共に基材よりも
高密度である保護膜を乾式成膜法により形成している。In order to achieve the above object, according to the present invention, a protective film having the same composition as a substrate and having a higher density than the substrate is provided on a substrate made of a silicon carbide sintered body in order to improve erosion resistance to plasma. Is formed by a dry film forming method.
分散板が使用される時、被プラズマ処理物に反射した
プラズマは保護膜に衝突する。この保護膜は基材と同一
組成であるため、熱膨張率の差がほとんど無くて密着性
に優れている。又、基材よりも高密度である。その結
果、この保護膜により基材のプラズマに対する耐浸食性
が向上するため、プラズマ分散板の耐久性が向上する。
しかも、乾式成膜法により保護膜が形成されているた
め、膜厚均一性に優れた膜が形成される。これにより、
部分的に膜厚の薄い部分が存在することはほとんどな
く、分散板の耐久性をより一層向上させることができ
る。When the dispersion plate is used, the plasma reflected on the object to be processed collides with the protective film. Since this protective film has the same composition as the base material, there is almost no difference in the coefficient of thermal expansion, and the protective film is excellent in adhesion. It is also denser than the substrate. As a result, the protective film improves the erosion resistance of the base material against plasma, thereby improving the durability of the plasma dispersion plate.
Moreover, since the protective film is formed by the dry film forming method, a film having excellent film thickness uniformity is formed. This allows
There is almost no portion where the film thickness is partially small, and the durability of the dispersion plate can be further improved.
以下、この発明を具体化した一実施例を図面に従って
詳細に説明する。まず、プラズマエッチング装置につい
て説明すると、第１図に示すように、反応容器１の下方
には電極２が配置され、その上面にはシリコンウエハ３
が載置されている。電極２に対向するように、反応容器
１の内部上方には、分散板４が配置されている。この分
散板４の基材５の上面には電極６が設けられている。更
に、シリコンウエハ３に対向するように、前記基材５の
下面には保護膜７が形成されている。Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. First, the plasma etching apparatus will be described. As shown in FIG. 1, an electrode 2 is arranged below a reaction vessel 1 and a silicon wafer 3
Is placed. A dispersion plate 4 is arranged above the inside of the reaction vessel 1 so as to face the electrode 2. An electrode 6 is provided on the upper surface of the substrate 5 of the dispersion plate 4. Further, a protective film 7 is formed on the lower surface of the substrate 5 so as to face the silicon wafer 3.
そして、シリコンウエハ３のエッチングを行う場合、
両電極2,6間に高周波電圧を印加した状態で、反応容器
１内に供給口８から四塩化シリコン等のガスを送り込ん
で、プラズマを生成すれば、そのプラズマが分散板４に
よって容器１内に分散されて、シリコンウエハ３の表面
に均一に供給される。And when etching the silicon wafer 3,
When a gas such as silicon tetrachloride is fed from the supply port 8 into the reaction vessel 1 while a high-frequency voltage is applied between the two electrodes 2 and 6 to generate plasma, the plasma is dispersed in the vessel 1 by the dispersion plate 4. And uniformly supplied to the surface of the silicon wafer 3.
さて、第２図に示すように、前記分散板４の基材５
は、例えば直径200mm、厚さ20mmの大きさを有し、密度
が1.7〜2.0g/cm3の多孔質又は非多孔質の炭化珪素焼結
体によって形成されている。電極６はカーボン等によっ
て形成されている。一方、前記保護膜７は基材５と同一
の組成（SiC）を有する。この保護膜７は高純度である
ことが必要であり、それに含まれるメタル不純物（Pt,N
i,Cr,Cu,CO,Ca,Mg,Na,K等）の濃度は10ppm以下であるこ
とが望ましい。上記の純度を確保するため、保護膜７は
乾式成膜法、例えば化学反応法（CVD）或いは物理反応
法（PVD）若しくはそれらの組み合わせによって形成さ
れる。その厚さは0.01〜2mmで、密度は基材５よりも大
きく、3.0g/cm3程度であることが望ましい。密度を大き
くすればプラズマ分散板の耐久性が向上するからであ
る。Now, as shown in FIG.
Has a size of, for example, a diameter of 200 mm and a thickness of 20 mm, and is formed of a porous or nonporous silicon carbide sintered body having a density of 1.7 to 2.0 g / cm 3 . The electrode 6 is formed of carbon or the like. On the other hand, the protective film 7 has the same composition (SiC) as the base material 5. This protective film 7 needs to have high purity, and metal impurities (Pt, N
The concentration of i, Cr, Cu, CO, Ca, Mg, Na, K, etc.) is preferably 10 ppm or less. In order to ensure the above purity, the protective film 7 is formed by a dry film forming method, for example, a chemical reaction method (CVD) or a physical reaction method (PVD) or a combination thereof. It is preferable that the thickness is 0.01 to 2 mm and the density is larger than that of the base material 5 and about 3.0 g / cm 3 . This is because increasing the density improves the durability of the plasma dispersion plate.
そして、上記のプラズマ分散板４において、基材５及
び保護膜７の熱膨張率は両者の組成が同一であるため、
略同一になる。そのため、基材５と保護膜７との間のミ
スマッチングが小さくなり、保護膜７が密着性に優れた
ものになる。基材５を多孔質にすれば、物理的アンカー
効果と三次元的絡み合いにより、保護膜７の密着性が更
に向上する。In the above-mentioned plasma dispersion plate 4, since the thermal expansion coefficients of the base material 5 and the protective film 7 are the same, the compositions thereof are the same.
It is almost the same. Therefore, the mismatch between the base material 5 and the protective film 7 is reduced, and the protective film 7 has excellent adhesion. If the base material 5 is made porous, the adhesion of the protective film 7 is further improved by a physical anchor effect and three-dimensional entanglement.
従って、上記の分散板４を使用すれば、エッチング処
理中にシリコンウエハ３によって反射されたプラズマが
分散板４の下面に衝突しても、保護膜７によって基材５
の浸食が未然に防止される。その結果、分散板４の寿命
は長くなり、長期にわたって使用することができる。
又、交換頻度を少なくして、プラズマエッチング装置の
ランニングコストを低減することができる。Therefore, if the above-mentioned dispersion plate 4 is used, even if the plasma reflected by the silicon wafer 3 collides with the lower surface of the dispersion plate 4 during the etching process, the base film 5 is protected by the protective film 7.
Erosion is prevented beforehand. As a result, the life of the dispersion plate 4 is extended, and the dispersion plate 4 can be used for a long time.
Further, the replacement frequency can be reduced, and the running cost of the plasma etching apparatus can be reduced.
以上詳述したように、この発明によれば、プラズマに
対する耐久性が向上するため、プラズマ分散板の寿命を
長くすることができる。また、膜厚均一性に優れた保護
膜が形成されるため、分散板の耐久性がより一層向上
し、寿命もより長くすることができる。As described in detail above, according to the present invention, the durability against plasma is improved, so that the life of the plasma dispersion plate can be extended. Further, since a protective film having excellent film thickness uniformity is formed, the durability of the dispersion plate is further improved, and the life can be prolonged.
第１図はプラズマエッチング装置を示す概略断面図、第
２図は分散板の拡大断面図である。 ３……被プラズマ処理物としてのシリコンウエハ、４…
…分散板、５……基材、７……保護膜。FIG. 1 is a schematic sectional view showing a plasma etching apparatus, and FIG. 2 is an enlarged sectional view of a dispersion plate. 3... Silicon wafer as an object to be processed by plasma, 4.
... Dispersion plate, 5 ... Base material, 7 ... Protective film.
Claims (1)
に対する耐浸食性を向上させるべく基材と同一の組成を
有すると共に基材よりも高密度である保護膜を乾式成膜
法により形成したことを特徴とするプラズマ分散板。A protective film having the same composition as a substrate and having a higher density than a substrate is formed on a substrate made of a silicon carbide sintered body by a dry film forming method in order to improve erosion resistance to plasma. A plasma dispersion plate characterized by being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304586A JP2842876B2 (en) | 1988-11-30 | 1988-11-30 | Plasma dispersion plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304586A JP2842876B2 (en) | 1988-11-30 | 1988-11-30 | Plasma dispersion plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02150024A JPH02150024A (en) | 1990-06-08 |
| JP2842876B2 true JP2842876B2 (en) | 1999-01-06 |
Family
ID=17934779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63304586A Expired - Lifetime JP2842876B2 (en) | 1988-11-30 | 1988-11-30 | Plasma dispersion plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2842876B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422322A (en) * | 1993-02-10 | 1995-06-06 | The Stackpole Corporation | Dense, self-sintered silicon carbide/carbon-graphite composite and process for producing same |
| US6451157B1 (en) * | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| JP7054046B2 (en) * | 2018-02-05 | 2022-04-13 | 三菱マテリアル株式会社 | Manufacturing method of electrode plate for plasma processing equipment and electrode plate for plasma processing equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6226820A (en) * | 1985-07-26 | 1987-02-04 | Ibiden Co Ltd | Silicon carbide plasma dispersing plate |
-
1988
- 1988-11-30 JP JP63304586A patent/JP2842876B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02150024A (en) | 1990-06-08 |
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