JP2823758B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a semiconductor device mounted on an information processing device such as a computer.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device mounted on an information processing apparatus such as a computer, a semiconductor element is bonded and fixed on a metal plate via an adhesive, and each electrode (
The power supply electrode, the ground electrode, and the signal electrode) are electrically connected to the external lead terminals via bonding wires.After that, the semiconductor element fixed on the metal plate and a part of the external lead terminals are molded and covered with resin. Are manufactured by hermetically sealing a semiconductor element.

In recent years, however, the density and integration of semiconductor devices have been rapidly increasing, and the number of electrodes has been greatly increased. The number of external lead terminals connected to each electrode of the semiconductor device has also been increasing. The line width of each external lead terminal is extremely small, and the inductance is as high as about 20 nH. Therefore, when power and an electric signal for driving are supplied to the semiconductor element through the external lead terminal, a large noise is generated when the supply power supply voltage to the semiconductor element fluctuates due to a high inductance of the external lead terminal. This has a serious drawback in that this is supplied to the semiconductor element together with the electric signal and causes the semiconductor element to malfunction.

In order to solve the above-mentioned drawbacks, of the external lead terminals, a power lead terminal to which a power electrode and a ground electrode of a semiconductor element are connected and a ground lead terminal are opposed to each other with a resin dielectric layer made of a polyimide resin interposed therebetween. A constant capacitance having a polyimide resin as a dielectric material is provided between a power supply lead terminal and a ground lead terminal, and a noise generated due to a fluctuation of a power supply voltage supplied to the semiconductor element is absorbed by the capacitance. It has been proposed to prevent malfunction of the device.

[0005]

However, in this semiconductor device, the facing area between the power supply lead terminal and the ground lead terminal is as small as about 400 mm ^2, and the polyimide resin sandwiched between the power supply lead terminal and the ground lead terminal. Dielectric constant 3.
The capacitance formed between the power supply lead terminal and the ground lead terminal is as small as about 0.2 nF due to the low value of about 5 and the like. As a result, the capacitance causes the fluctuation of the power supply voltage supplied to the semiconductor element. The generated noise cannot be completely absorbed, and still has a drawback that a semiconductor element malfunctions.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object of the present invention is to effectively absorb noise caused by fluctuations in a power supply voltage to a semiconductor element and to make the semiconductor element normal and stable for a long period of time. It is an object of the present invention to provide a semiconductor device which can be operated at a low speed.

[0007]

SUMMARY OF THE INVENTION The present invention provides a semiconductor device,
A semiconductor device comprising a power lead terminal, a ground lead terminal, and a signal lead terminal to which a power electrode, a ground electrode, and a signal electrode of the semiconductor element are connected, and a resin coating material that partially covers the semiconductor element and each of the lead terminals. Wherein a high dielectric constant ceramic having a dielectric constant of 500 or more is interposed between the power supply lead terminal and the ground lead terminal.

Further, the invention is characterized in that the semiconductor element is mounted on the upper surface of the ground lead terminal, and a projection is formed below a region where the semiconductor element of the ground lead terminal is mounted. .

Further, the present invention is characterized in that a radiation fin is joined to the protruding portion of the ground lead terminal.

[0010]

According to the present invention, a high dielectric constant ceramic having a dielectric constant of 500 or more is interposed between a power supply lead terminal to which a power supply electrode and a ground electrode of a semiconductor element are connected and a ground lead terminal. As a result, a large capacitance of 10.0 nF or more is connected between the ground lead terminals. As a result, even if noise occurs due to the fluctuation of the power supply voltage supplied to the semiconductor element, the noise remains at the large capacitance. Accordingly, the semiconductor device is effectively absorbed, and no noise enters the semiconductor device, and the semiconductor device can be operated normally and stably for a long period of time.

The semiconductor element is mounted on the upper surface of the ground lead terminal, and a projection is formed below a region of the ground lead terminal on which the semiconductor element is mounted. Even if the semiconductor device generates a large amount of heat during operation because the heat dissipation fins are joined to the part, the heat is satisfactorily dissipated into the atmosphere via the ground lead terminal and the heat dissipation fins. It can be operated normally and stably for a long time at a low temperature.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 shows an embodiment of a semiconductor device according to the present invention. In the drawing, a semiconductor device 1 includes a semiconductor element 2, a power supply lead terminal 3 a, a ground lead terminal 3 b, a signal lead terminal 3 c, and a resin coating material 4. It is composed of

The power supply lead terminal 3a, the ground lead terminal 3
b, the signal lead terminal 3c functions to electrically connect the power electrode, the ground electrode, and the signal electrode of the semiconductor element 2 to an external electric circuit, and the power electrode of the semiconductor element 2 is connected to the power lead terminal 3a by the ground lead. Terminal 3b has a ground electrode and signal lead terminal
The signal electrodes 3c are electrically connected to each other via bonding wires 5.

A semiconductor element 2 is mounted on the ground lead terminal 3b. The semiconductor element 2 is made of glass,
It is bonded and fixed to the upper surface of the ground lead terminal 3b via an adhesive such as resin or brazing material.

The lead terminals 3a, 3b, 3c are made of copper (Cu), copper-zirconium alloy (Cu-Zr alloy), Kovar alloy (Fe-Ni
-Co alloy), 42 alloy (Fe-Ni alloy) and other metal materials, and ingots (lumps) of Kovar metal etc. are formed into a thin plate by using the conventionally known rolling method, and are punched. It is formed by punching into a predetermined shape by a method or an etching method.

A high-permittivity ceramic 6 is sandwiched between the power lead terminal 3a and the ground lead terminal 3b, and a high dielectric ceramic is placed between the power lead terminal 3a and the ground lead terminal 3b. A constant capacitance is formed with 6 as a dielectric. In this case, the dielectric constant of the high dielectric ceramic 6 is
Since it is 500 or more, the capacitance formed between the power supply lead terminal 3a and the ground lead terminal 3b has a large value of 10.0 nF or more, and as a result, the fluctuation of the power supply voltage supplied to the semiconductor element 2 Is effectively absorbed by the large capacitance, and the noise is applied to the semiconductor element 2 together with the electric signal, so that the semiconductor element 2 does not malfunction.

The power lead terminal 3a and the ground lead terminal 3b
Barium titanate porcelain or titanium oxide porcelain is preferably used as the high dielectric constant ceramic 6 sandwiched between the above.For example, in the case of barium titanate porcelain, raw powder such as barium carbonate, titanium oxide, magnesium titanate, etc. Baking and reacting to obtain barium titanate and pulverizing it into fine powder to obtain barium titanate powder, and then adding a suitable solvent and solvent to the barium titanate powder to form a slurry, A raw sheet is obtained by forming into a sheet shape by employing a doctor blade method or the like, and finally, a plurality of the raw sheets are laminated and fired at a temperature of about 1300 ° C.

The high dielectric constant ceramic 6 has a dielectric constant of 50.
When the value is less than 0, the capacitance formed between the power supply lead terminal 3a and the ground lead terminal 3b decreases, and the semiconductor element 2
The noise generated due to the fluctuation of the power supply voltage to the power supply cannot be effectively absorbed by the capacitance. Therefore, the high dielectric constant ceramic 6 is specified to have a dielectric constant of 500 or more.

The high dielectric constant ceramic 6 has a metallized metal layer made of molybdenum-manganese previously deposited on the upper and lower surfaces thereof, and the metallized metal layer is connected to the power supply lead terminal 3a.
Is fixed between the power supply lead terminal 3a and the ground lead terminal 3b by bonding to the ground lead terminal 3b and a brazing material such as solder.

The semiconductor element 2 and a part of the power supply lead terminal 3a, the ground lead terminal 3b, and the signal lead terminal 3c to which the power supply electrode, the ground electrode, and the signal electrode of the semiconductor element 2 are connected are also made of resin such as epoxy resin. The semiconductor device as a final product is obtained by being covered with the coating material 4 and hermetically sealing the semiconductor element 2.

The semiconductor element 2 and the like are covered with a resin coating material 4 in a predetermined jig.
Ground lead terminal 3b, signal lead terminal 3c and high dielectric constant porcelain
After that, a liquid epoxy resin is dropped and filled in the jig, and the filled liquid resin is thermally cured at a temperature of 150 to 170 ° C.

Thus, the semiconductor device of the present invention is mounted on an information processing device such as a computer by connecting each lead terminal to an external electric circuit and connecting each electrode of the semiconductor element to the external electric circuit.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, as shown in FIG. If a projection 7 is formed below the region of the ground lead terminal 3b on which the semiconductor element 2 is mounted, the projection 7 of the ground lead terminal 3b absorbs heat generated when the semiconductor element 2 operates. At the same time, the absorbed heat is dissipated into the air to lower the temperature of the semiconductor element 2 to a low temperature. As a result, it is possible to effectively prevent the semiconductor element 2 from being thermally destructed or thermally changed in characteristics, thereby causing malfunction. This allows the semiconductor element 2 to operate normally and stably for a long period of time.

The protruding portion 7 of the ground lead terminal 3b is made of the same material as the ground lead terminal 3b, specifically, copper (Cu), copper-zirconium alloy (Cu-Zr alloy), Kovar alloy (Fe-Ni-Co alloy). ), 42 alloy (Fe-Ni alloy), etc., and a conventional well-known rolling method is applied to an ingot (lumps) of Kovar metal or the like to obtain the ground lead terminal 3b and at the same time to obtain the ground lead terminal 3b. Formed.

When the semiconductor element 2 generates an extremely large amount of heat during operation, as shown in FIG. 3, a radiating fin 8 is joined to a projection 7 provided below the ground lead terminal 3b. However, the heat can be more efficiently dissipated in the atmosphere through the protruding portions 7 and the radiating fins 8, so that even if the semiconductor element 2 generates a large amount of heat, the semiconductor element 2 is kept at a low temperature for a long time. It can operate normally and stably.

As the radiating fin 8 joined to the protruding portion 7 provided on the ground lead terminal 3b, a metal having a thermal conductivity of 150 W / m · K or more such as aluminum or copper is preferably used. It is formed by performing metal working such as mechanical grinding on one main surface of the plate-like body thus formed to form a large number of grooves.

The radiating fins 8 are provided on the grounding lead terminals 3b with an adhesive such as silver-epoxy resin.
Joined to.

[0029]

According to the semiconductor device of the present invention, a high dielectric constant ceramic having a dielectric constant of 500 or more is interposed between a power supply lead terminal and a ground lead terminal to which a power supply electrode and a ground electrode of a semiconductor element are connected. As a result, a large capacitance of 10.0 nF or more is connected between the power supply lead terminal and the ground lead terminal.As a result, even if noise occurs due to fluctuations in the power supply voltage supplied to the semiconductor element, the noise is not affected. Is effectively absorbed by the large capacitance, so that no noise enters the semiconductor element, and the semiconductor element can be operated normally and stably for a long period of time.

Further, in the semiconductor device of the present invention, if a semiconductor element is mounted on the upper surface of the ground lead terminal and a protruding portion is formed below a region where the semiconductor element of the ground lead terminal is mounted, the semiconductor device may be further required. If a radiation fin is joined to the projection, heat generated during operation of the semiconductor element is absorbed by the projection and the radiation fin and efficiently radiated into the atmosphere.As a result, the temperature of the semiconductor element is always low, The semiconductor element can be normally and stably operated for a long time.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing another embodiment of the present invention.

FIG. 3 is a sectional view showing another embodiment of the present invention.

[Explanation of symbols]

 1 ... Semiconductor device 2 ... Semiconductor element 3a ... Power supply lead terminal 3b ... Ground lead terminal 3c ... Signal lead terminal 4 ... Resin coating material 6 ···· High-permittivity porcelain 7 ···· Protrusion 8 ··· Radiating fins

Claims (2)

(57) [Claims] A power lead terminal to which a power supply electrode, a ground electrode, and a signal electrode of the semiconductor element are connected;
A semiconductor device comprising a ground lead terminal and a signal lead terminal, and a resin coating material for covering a part of the semiconductor element and each lead terminal, wherein a dielectric constant between the power lead terminal and the ground lead terminal is 500. semiconductor Rutotomoni, the upper surface of the ground lead terminal is interposed a high dielectric constant ceramics of higher
An element mounted thereon, and the semiconductor element of the ground lead terminal.
A semiconductor device, wherein a protruding portion is provided below a region where a child is mounted . 2. The semiconductor device according to claim 1, wherein a radiation fin is joined to the projection of said ground lead terminal.