JP2819823B2 - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JP2819823B2 JP2819823B2 JP31540490A JP31540490A JP2819823B2 JP 2819823 B2 JP2819823 B2 JP 2819823B2 JP 31540490 A JP31540490 A JP 31540490A JP 31540490 A JP31540490 A JP 31540490A JP 2819823 B2 JP2819823 B2 JP 2819823B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- injection layer
- light
- hole injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002347 injection Methods 0.000 claims description 27
- 239000007924 injection Substances 0.000 claims description 27
- 229920000642 polymer Polymers 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- 230000001939 inductive effect Effects 0.000 claims description 8
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- 230000015556 catabolic process Effects 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000005297 pyrex Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001226 reprecipitation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UTOVMEACOLCUCK-SNAWJCMRSA-N (e)-4-butoxy-4-oxobut-2-enoic acid Chemical compound CCCCOC(=O)\C=C\C(O)=O UTOVMEACOLCUCK-SNAWJCMRSA-N 0.000 description 1
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、誘起発光物質を用いた発光素子に関する。Description: TECHNICAL FIELD The present invention relates to a light emitting device using an induced light emitting substance.
従来の有機発光物質を用いた発光素子としては、正孔
注入層または電子注入層を有する多層構造の素子が知ら
れている（斎藤ら、化学と工業第42巻 第11号（1989）
p143など）。As a conventional light emitting device using an organic light emitting material, a device having a multilayer structure having a hole injection layer or an electron injection layer is known (Saito et al., Chemistry and Industry Vol. 42, No. 11 (1989)).
p143).
発光層、正孔注入層、電子注入層の各有機層は、真空
蒸着により1000オングストローム以下の厚さの均一な薄
膜で形成されている。直流10ボルト程度の駆動電圧で、
1000cd/m2以上の発光輝度が得られている。Each organic layer of the light emitting layer, the hole injection layer, and the electron injection layer is formed as a uniform thin film having a thickness of 1000 angstroms or less by vacuum deposition. With a driving voltage of about 10 VDC,
Light emission luminance of 1000 cd / m 2 or more is obtained.
しかしこのように形成した発光素子は、印加電圧に対
する発光強度の閾値特性が急峻でなく、大容量表示を行
なうための時分割駆動ができない。また、絶縁破壊が起
こりやすく、素子の信頼性が低いなどの課題があった。However, the light emitting element thus formed does not have a steep threshold characteristic of the light emission intensity with respect to the applied voltage, and cannot perform time division driving for performing large-capacity display. In addition, there is a problem that dielectric breakdown easily occurs and the reliability of the element is low.
そこで本発明は、印加電圧に対する発光強度の閾値特
性が急峻で大容量表示の時分割駆動が可能であり、絶縁
破壊が起こりにくく信頼性の高い発光素子の提供を目的
とする。Therefore, an object of the present invention is to provide a highly reliable light emitting element which has a steep threshold characteristic of light emission intensity with respect to an applied voltage, enables time-division driving of large-capacity display, and is less likely to cause dielectric breakdown.
本発明の発光素子は、有機発光層と、正孔注入層およ
び電子注入層の少なくともどちらか一方を有する発光素
子において、前記正孔注入層または電子注入層が、高分
子絶縁体と高分子絶縁体内に分散した電荷移動物質から
構成される非線形電気伝導誘起層であることを特徴とす
る。The light-emitting device of the present invention is a light-emitting device having an organic light-emitting layer and at least one of a hole injection layer and an electron injection layer, wherein the hole injection layer or the electron injection layer has a polymer insulator and a polymer insulator. It is characterized by being a non-linear electric conduction inducing layer composed of a charge transfer material dispersed in the body.
また、上記高分子絶縁体が、ポリジアルキルフマレー
トであることを特徴とする。Further, the polymer insulator is a polydialkyl fumarate.
本発明の上記の構成によれば、正孔注入層または電子
注入層が、非線形電気伝導誘起層を兼ねるため、印加電
圧に対する電流密度の非線形性を従来より大きくするこ
とができる。そのため電流密度にほぼ比例する発光強度
の、印加電圧に対する閾値特性を急峻にすることができ
る。According to the above configuration of the present invention, since the hole injection layer or the electron injection layer also functions as the nonlinear electric conduction inducing layer, the non-linearity of the current density with respect to the applied voltage can be made larger than before. Therefore, it is possible to sharpen the threshold characteristic of the light emission intensity, which is substantially proportional to the current density, with respect to the applied voltage.
正孔注入層または電子注入層が、電気耐圧と機械的強
度に選れた高分子絶縁体と高分子絶縁体内に分散した電
荷移動物質から構成されれば、絶縁破壊が起こりにく
く、素子の信頼性を高めることができる。高分子絶縁体
としてポリジアルキルフマレートは、単独で用いた場
合、数百オングストロームの非常に薄い膜でも、電気絶
縁特性の優れた薄膜が得られる材料として知られてい
る。If the hole injection layer or the electron injection layer is composed of a polymer insulator selected for its electric breakdown voltage and mechanical strength and a charge transfer material dispersed in the polymer insulator, dielectric breakdown is unlikely to occur, and the reliability of the device is reduced. Can be enhanced. Polydialkyl fumarate as a polymer insulator is known as a material that, when used alone, can provide a thin film having excellent electrical insulation properties even with a very thin film of several hundred angstroms.
以下、実施例により本発明の詳細を示す。 Hereinafter, the present invention will be described in detail with reference to examples.
（実施例１） 非線形電気伝導層に用いる高分子絶縁体は、ポリジイ
ソプロピルフマレート（以下本明細書ではPDiPFと略記
する）をもちいた。PDiPFは再沈澱によって精製したの
ち、正孔注入物質であるオキサジアゾール誘導体５重量
％と共にトルエンに溶解させ、0.5μｍのフィルターを
通して原料溶液とした。(Example 1) Polydiisopropyl fumarate (hereinafter abbreviated as PDiPF in the present specification) was used as a polymer insulator used for the nonlinear electric conductive layer. After purification by reprecipitation, PDiPF was dissolved in toluene together with 5% by weight of an oxadiazole derivative as a hole-injecting substance, and passed through a 0.5 μm filter to obtain a raw material solution.
第１図は本実施例における構成を模式的に示す発光素
子の断面図である。ここでは発光物質としてアントラセ
ンを用いたが、ピレン、ベンズアントラセン、ペリレ
ン、テトラセン、ナフタセン、コロネン、クマリン、シ
クロペンタジエン、キノリン、及びこれら有機発光物質
の誘導体などが同様に利用できる。基板としては、表面
を光学研磨したパイレックスガラス11を用い、ITOの導
電体膜をスパッターもしくは蒸着で形成し、フォトエッ
チングによって100μｍ幅にパターンを形成して陰極12
とした。FIG. 1 is a cross-sectional view of a light emitting device schematically showing a configuration in the present embodiment. Here, anthracene was used as the light-emitting substance, but pyrene, benzanthracene, perylene, tetracene, naphthacene, coronene, coumarin, cyclopentadiene, quinoline, and derivatives of these organic light-emitting substances can also be used. As the substrate, Pyrex glass 11 whose surface is optically polished is used, a conductive film of ITO is formed by sputtering or vapor deposition, and a pattern having a width of 100 μm is formed by photoetching to form a cathode 12.
And
この基板上に、1000Åの膜厚となるように回転数と時
間を制御して、スピンコーターで前述のPDiPFの原料溶
液を塗布し、正孔注入機能を持つ非線形電気伝導誘起層
13とした。その上にアントラセンを真空蒸着により、50
0Åの膜厚で形成し発光層14とした。更に、クロムを真
空蒸着で形成した後、陰極と直交するよう100μｍ幅に
フォトエッチングパターン形成して正極15とし発光素子
が得られた。The rotation speed and time are controlled to a thickness of 1000 mm on this substrate, and the above-mentioned PDiPF material solution is applied by a spin coater, and a nonlinear electric conduction inducing layer having a hole injection function is applied.
It was set to 13. Anthracene is deposited on top of this by vacuum evaporation.
The light emitting layer 14 was formed with a thickness of 0 °. Further, after chromium was formed by vacuum evaporation, a photo-etching pattern was formed in a width of 100 μm so as to be orthogonal to the cathode, and the cathode 15 was obtained to obtain a light emitting device.
電極間に電界を印加したところ10ボルト以上で急に電
流が流れはじめ、発光が観測された。また、50ボルトの
電圧を印加しても絶縁破壊は起きず、発光特性にも変化
はなかった、印加電圧に対する発光特性を第２図に示
す。発光強度の、印加電圧に対する閾値特性が急峻なた
め、400ラインでの時分割駆動が可能であった。When an electric field was applied between the electrodes, a current began to flow suddenly at 10 V or more, and light emission was observed. FIG. 2 shows the light emission characteristics with respect to the applied voltage, in which no dielectric breakdown occurred even when a voltage of 50 V was applied, and the light emission characteristics did not change. Since the threshold characteristics of the light emission intensity with respect to the applied voltage were steep, time-division driving with 400 lines was possible.
（実施例２） 非線形電気伝導層を用いる高分子絶縁体は、ポリジte
rtブチルフマレート（以下本明細書ではPDtBFと略記す
る）をもちいた。PDtBFは再沈澱によって精製した後、
電子注入物質であるフタロシアニン誘導体２重量％と共
に四塩化炭素に溶解させ、0.5μｍのフィルターを通し
て原料溶液とした。Example 2 A polymer insulator using a non-linear electric conductive layer is
Rt butyl fumarate (hereinafter abbreviated as PDtBF in the present specification) was used. PDtBF is purified by reprecipitation,
It was dissolved in carbon tetrachloride together with 2% by weight of a phthalocyanine derivative as an electron injecting substance, and passed through a 0.5 μm filter to obtain a raw material solution.
表面を光学研磨したパイレックスガラス上にインジウ
ムの導電体膜をスパッターもしくは蒸着で形成し、フォ
トエッチングによって100μｍ幅にパターンを形成して
正極とした。その上に800Åの膜厚となるように回転数
と時間を制御して、スピンコーターで前述のPDtBFの原
料溶液を塗布し、電子注入機能をつ非線形電気伝導誘起
層とした。A conductive film of indium was formed by sputtering or evaporation on Pyrex glass whose surface was optically polished, and a pattern having a width of 100 μm was formed by photoetching to obtain a positive electrode. The above-mentioned solution of PDtBF was applied thereon by controlling the number of revolutions and time so that the film thickness became 800 °, and a non-linear electric conduction inducing layer having an electron injection function was applied.
その上にキノリンの誘導体を真空蒸着により、800Å
の膜厚で形成し発光層とした。更に、ITOを真空蒸着で
形成した後、正極と直交するよう100μｍ幅にフォトエ
ッチングでパター形成して陰極とし発光素子が得られ
た。A quinoline derivative is vacuum-deposited on the
To form a light emitting layer. Further, after ITO was formed by vacuum deposition, a pattern was formed by photoetching in a width of 100 μm so as to be orthogonal to the positive electrode, and a light emitting element was obtained as a cathode.
電極間に電界を印加したところ10ボルト以上で急に電
流が流れはじめ、発光が観測された。また、50ボルトの
電圧を印加しても絶縁破壊は起きず、発光特性にも変化
はなかった。発光強度の、印加電圧に対する閾値特性が
急峻なため、400ラインでの時分割駆動が可能であっ
た。When an electric field was applied between the electrodes, a current began to flow suddenly at 10 V or more, and light emission was observed. Also, even when a voltage of 50 volts was applied, no dielectric breakdown occurred, and there was no change in the light emission characteristics. Since the threshold characteristics of the light emission intensity with respect to the applied voltage were steep, time-division driving with 400 lines was possible.
（実施例３） 非線形電気伝導層に用いる高分子絶縁体は、ポリジシ
クロヘキシルフマレート（以下本明細書ではPDcHFと略
記する）をもちいた。PDcHFは再沈澱によって精製した
のち、正孔注入物質であるトリフェニルアミン誘導体８
重量％と共にトルエンに溶解させ、0.5μｍのフィルタ
ーを通して原料溶液とした。(Example 3) Polydicyclohexyl fumarate (hereinafter abbreviated as PDcHF in the present specification) was used as a polymer insulator used for the nonlinear electric conductive layer. PDcHF was purified by reprecipitation, and then triphenylamine derivative 8
The raw material solution was dissolved in toluene together with the weight% and passed through a 0.5 μm filter.
表面を光学研磨したパイレックスガラス上にITOの導
電体膜をスパッターもしくは蒸着で形成し、フォトエッ
チングによって60μｍ幅にパターンを形成して陰極とし
た。その上に1200Åの膜厚となるように回転数と時間を
制御して、スピンコーターで前述のPDcHFの原料溶液を
塗布し、正孔注入機能を持つ非線形電気伝導誘起層とし
た。A conductive film of ITO was formed by sputtering or vapor deposition on Pyrex glass whose surface was optically polished, and a pattern having a width of 60 μm was formed by photoetching to form a cathode. The above-mentioned solution of PDcHF was applied thereon by controlling the number of revolutions and time so that the film thickness became 1200 °, and a nonlinear electric conduction inducing layer having a hole injection function was applied by a spin coater.
その上にペリノン誘導体を真空蒸着により、800Åの
膜厚で形成し発光層とし、連続してペリレンテトラカル
ボキシル誘導体を真空蒸着により、800Åの膜厚で形成
し電子注入層とした。更に、クロムを真空蒸着で形成し
た後、陰極と直交するよう60μｍ幅にフォトエッチング
でパター形成して正極とし発光素子が得られた。A perinone derivative was formed thereon by vacuum evaporation to a thickness of 800 ° to form a light emitting layer, and a perylene tetracarboxyl derivative was formed continuously by vacuum deposition to a thickness of 800 ° to form an electron injection layer. Further, after chromium was formed by vacuum evaporation, a pattern was formed by photoetching so as to be orthogonal to the cathode with a width of 60 μm to obtain a light emitting element as a positive electrode.
電極間に電界を印加したところ８ボルト以上で急に電
流が流れはじめ、発光が観測された。また、50ボルトの
電圧を印加しても絶縁破壊は起きず、発光特性にも変化
はなかった。発光強度の、印加電圧に対する閾値特性が
急峻なため、400ラインでの時分割駆動が可能であっ
た。When an electric field was applied between the electrodes, a current began to flow suddenly at 8 V or more, and light emission was observed. Also, even when a voltage of 50 volts was applied, no dielectric breakdown occurred, and there was no change in the light emission characteristics. Since the threshold characteristics of the light emission intensity with respect to the applied voltage were steep, time-division driving with 400 lines was possible.
以上、実施例を述べたが発光物質、正孔注入物質、電
荷注入物質、絶縁性高分子、電極材料はここに述べた物
質に限らない。Although the embodiments have been described above, the light emitting substance, the hole injection substance, the charge injection substance, the insulating polymer, and the electrode material are not limited to the substances described here.
以上述べたように本発明によれば、誘起発光層と、正
孔注入層および電子注入層の少なくともどちらか一方を
有する発光素子において、前記正孔注入層また電子注入
層が、高分子絶縁体と高分子絶縁体内に分散した電荷移
動物質から構成される非線形電気伝導誘起層であること
により、印加電圧に対する発光強度の閾値特性が急峻で
大容量表示の時分割駆動が可能であり、絶縁破壊が起こ
りにくく信頼性の高い発光素子を提供することができ
た。As described above, according to the present invention, in a light-emitting element having an induced light-emitting layer and at least one of a hole injection layer and an electron injection layer, the hole injection layer or the electron injection layer is formed of a polymer insulator. And a non-linear electric conduction inducing layer composed of a charge transfer substance dispersed in a polymer insulator, the threshold characteristic of the emission intensity with respect to the applied voltage is steep, and time-division driving of large-capacity display is possible. It is possible to provide a highly reliable light emitting element in which occurrence of light is difficult.
第１図は、本発明の実施例１における発光素子の構成を
模式的に表す断面図である。 第２図は、本発明の実施例１で作成した発光素子の印加
電圧に対する発光特性を表わす図である。 11……基板 12……陰極 13……正孔注入機能を持つ非線形電気伝導誘起層 14……発光層 15……正極 21……発光特性曲線FIG. 1 is a cross-sectional view schematically illustrating a configuration of a light emitting device according to Example 1 of the present invention. FIG. 2 is a diagram showing a light emitting characteristic of the light emitting device prepared in Example 1 of the present invention with respect to an applied voltage. 11 ... Substrate 12 ... Cathode 13 ... Non-linear electric conduction inducing layer with hole injection function 14 ... Emitting layer 15 ... Positive electrode 21 ... Emission characteristic curve
Claims (2)
層の少なくともどちらか一方を有する発光素子におい
て、前記正孔注入層又またはは電子注入層が、高分子絶
縁体と高分子絶縁体内に分散した電荷移動物質から構成
される非線形電気伝導誘起層であることを特徴とする発
光素子。1. A light emitting device having an organic light emitting layer and at least one of a hole injection layer and an electron injection layer, wherein the hole injection layer or the electron injection layer is composed of a polymer insulator and a polymer insulation layer. A light-emitting element comprising a non-linear electric conduction inducing layer composed of a charge transfer substance dispersed in a body.
レートであることを特徴とする請求項第１項記載の発光
素子。2. The light emitting device according to claim 1, wherein said polymer insulator is a polydialkyl fumarate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31540490A JP2819823B2 (en) | 1990-11-20 | 1990-11-20 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31540490A JP2819823B2 (en) | 1990-11-20 | 1990-11-20 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04188597A JPH04188597A (en) | 1992-07-07 |
| JP2819823B2 true JP2819823B2 (en) | 1998-11-05 |
Family
ID=18064982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31540490A Expired - Fee Related JP2819823B2 (en) | 1990-11-20 | 1990-11-20 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819823B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3238064B2 (en) * | 1996-02-05 | 2001-12-10 | ティーディーケイ株式会社 | Method of using low dielectric polymer material and method of using film, substrate and electronic component using the same |
-
1990
- 1990-11-20 JP JP31540490A patent/JP2819823B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04188597A (en) | 1992-07-07 |
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