JP2812281B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used in a high frequency band, and more particularly to a semiconductor device used for a transistor amplifying device requiring high output and high gain.

[0002]

2. Description of the Related Art Generally, a semiconductor device used in a high-frequency band of this kind, for example, a high-frequency, high-output transistor,
It is necessary to enhance the heat radiation effect with the increase in output and gain. For this reason, the conventional semiconductor device has a structure in which the outer shape of the package is enlarged or a heat radiating plate is added to the electrode portion of the package or the semiconductor element in order to enhance the heat radiation effect. Further, in this type of semiconductor device, it is necessary to increase isolation since high-frequency shielding between high-frequency input / output circuits is required.

FIG. 5 is a perspective view showing the appearance of a conventional semiconductor device, which will be described with reference to FIG. In the figure,
A semiconductor element, which is generally designated by the reference numeral 20, includes a package 21 in which a semiconductor chip (not shown) is sealed, a heat dissipation plate 22 fixed to the upper surface of the package 21 and formed in an E-shaped cross section, and exposed from the package 21. An input connection electrode portion 21a, an output connection electrode portion 21b, and a pair of ground electrode portions 21c of the semiconductor element are provided.

[0004]

In the above-described conventional semiconductor device, the external shape of the package 21 and the heat radiating plate 22 is increased in order to enhance the heat radiation effect, and the semiconductor element itself is increased in order to increase the surface area of the heat radiating plate 22. The structure was complicated and the outer shape was large. Further, since the cross-sectional shape of the heat radiating plate 22 is complicated and large, when the semiconductor element 20 to which this heat radiating plate 22 is attached is used in a semiconductor device, the space between the input / output electrode portions 21a and 21b of the high frequency input / output circuit is used. A gap is formed between the shielding plate for increasing high-frequency isolation and the package 21, and the gap is increased, so that a sufficient shielding effect cannot be obtained. In addition, since the ground electrode portion 21c of the semiconductor device 20 is electrically grounded through the through hole of the ground circuit formed on the dielectric substrate, the electric potential of the semiconductor device 20 is reduced by the parasitic inductance of the through hole. There is a problem that the characteristic tends to be unstable.

Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device having a small size without providing a special heat radiation structure. In addition to enabling efficient heat dissipation, a simple shielding structure provides high-frequency isolation between high-frequency input / output circuits, and reduces parasitic inductance that occurs when the ground electrode of the semiconductor element is electrically grounded. It is an object of the present invention to provide a possible semiconductor device.

[0006]

In order to achieve this object, according to the first aspect of the present invention, a semiconductor chip is encapsulated,
A package including an input / output connection electrode portion and a ground electrode portion; a substrate including a high-frequency input / output circuit to which the input / output connection electrode portion and the ground electrode portion of the package are connected; and a ground circuit; comprising body and, a heat radiating member for radiating heat generated by heat conduction intervening to the semiconductor device between the package and the casing, the heat radiating member and the package
A heat conductive interposition member that can move up and down
Flange on the part of the conductive interposed member that contacts the package
Is formed. Therefore, from the semiconductor chip
The generated heat is efficient from the package through the flange
The heat is well conducted to the heat radiating member and the housing, and the heat is radiated from here.
And heat conduction even if the package shape changes.
By adjusting the members vertically, the package
The heat conduction interposed member comes into contact with the upper end surface. Also, billing
In the invention described in Item 2, the semiconductor chip is sealed and the input / output connection is made.
A package including a connection electrode section and a ground electrode section;
When the input / output connection electrode of the package and the ground electrode are
Board with a high-frequency input / output circuit and a ground circuit
A housing for covering the package;
The heat generated by the semiconductor device is released by heat conduction
And a heat dissipating member for heating, wherein the heat dissipating member is arranged between the input / output connection electrodes of the package. Therefore, it is not necessary to newly provide a high-frequency shielding plate, and the size is reduced, the structure is not complicated, and the shielding effect is large. Ma
In the invention according to claim 3, the semiconductor chip is encapsulated,
Package with input / output connection electrode section and ground electrode section
And the input / output connection electrode part and the ground electrode part of this package.
With a high-frequency input / output circuit to which the
A plate, a housing covering the package, and the package.
The heat generated by the semiconductor device is transferred to the heat
Therefore, a heat dissipating member that dissipates heat
An elastically deformable heat conductive interposition between the pole part and the heat dissipating member
A member is provided. Therefore, the package connection
The connection between the ground electrode and the heat dissipation member and the heat conduction
In fact, heat conduction is improved. The invention according to claim 4
Has a semiconductor chip encapsulated,
A package with a ground electrode and the package
High frequency input / output where output connection electrode and ground electrode are connected
A substrate having a power circuit and a ground circuit, and the package
A housing to be covered, and an intervening space between the package and the housing.
A heat dissipating member that dissipates heat generated by the semiconductor device by heat conduction.
With the door, and a heat radiating member and the housing is formed of a conductive member, is obtained by interposing a conductive radiating plate between said heat radiating member and the ground electrode portion of the package. Accordingly, the grounding of the package is performed directly by the heat radiating plate without passing through the through hole of the substrate, so that the occurrence of inductance is reduced.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing the entire semiconductor device according to the present invention, and FIG. 2 is a sectional view taken along line II-II in FIG. In these figures, a semiconductor device indicated by reference numeral 1 is a package 2 in which a semiconductor chip (not shown) is enclosed, a dielectric substrate 3 on which a high-frequency input circuit 3a and a high-frequency output circuit 3b are formed, and a substantially rectangular parallelepiped. Heat dissipating member 5 formed in a U-shape and case 6 formed in a U-shaped cross section
And a flat lid 7. These heat dissipating members 5,
Both the case 6 and the lid 7 are formed of a conductive material having good thermal conductivity.

The package 2 includes an input connection electrode portion 2a forming a base or gate electrode and the like, an output connection electrode portion 2b forming a collector or drain electrode and the like, and a pair of ground electrodes forming an emitter or source electrode and the like. Part 2
c is provided. Reference numeral 4 denotes a pair of ground circuits each having a through hole 4a formed in the dielectric substrate 2. Heat dissipation member 5
A notch 5a having an inverted T-shaped cross section is provided in the lower part of the center of the screw member. A screw 5b is screwed so as to penetrate from the center of the upper end of the notch 5a to the upper end of the heat radiating member 5. The heat radiating member 5 is fixed to the dielectric substrate 3 such that the notch 5a is located above the ground circuit 4.

A pair of opposite side walls 6 are provided on both sides of the case 6.
The heat radiation member 5 is in contact with the inner side surfaces of the side walls 6a, 6a. A hole 7a is formed substantially at the center of the lid 7, and the upper end surface of the side walls 6a, 6a of the case 6 and the heat radiating portion are formed so that the hole 7a corresponds to the screw portion 5b of the heat radiating member 5. It is joined to the upper end surface of the member 5. Reference numeral 8 denotes a screw screwed to the screw portion 5b of the heat radiating member 5, and the lower end surface is formed flat.

In such a configuration, the input connection electrode 2a of the package 2 is soldered to the high-frequency input circuit 3a, the output connection electrode 2b is soldered to the high-frequency output circuit 3b, and the ground electrode 2c is soldered to the ground circuit 4. The package 2 is mounted on the dielectric substrate 3. The input connection electrode portion 2a and the output connection electrode portion 2b of the mounted package 2 are located on both sides of the heat radiation member 5. Next, the screw 8 is screwed into the screw portion 5b from the hole 7a of the lid 7 with a screwdriver or the like, and the lower end surface of the screw 8 is brought into contact with the upper end surface of the package 2.

In this state, the heat generated in the package 2 is transmitted from the upper end surface of the package 2 to the screw 8, and the heat radiating member 5, the case 6 and the lid 7 which are in contact with the heat radiating member. , Heat is efficiently radiated. In this case, the screw portion 5b and the package 2
By applying grease having good thermal conductivity to the upper end surface of the screw 8 and the lower end surface of the screw 8, the heat radiation effect can be further enhanced.

Further, since the height of the screw 8 can be freely changed, if the upper end surface of the package 2 is formed flat, the semiconductor device 1 can be formed even if the height of the package 2 changes.
The semiconductor device 1 can be used without changing its structure, and there is no need to redesign the semiconductor device 1 every time the size or shape of the semiconductor element changes. Further, since a special heat radiating plate or the like is not required for the semiconductor element itself, the semiconductor itself can be reduced in size and weight, and the size of the semiconductor device incorporating the semiconductor element can be reduced.

Further, since the heat radiating member 5 functions as a partition plate for shielding the high-frequency input circuit 3a and the high-frequency output circuit 3b of the semiconductor device 1 at a high frequency, the isolation between the high-frequency input / output circuits can be increased. it can. As described above, since the heat dissipating member 5 also has a function as a shielding plate, there is no need to provide a shielding plate in addition to the heat dissipating plate as in the related art, and therefore, there is no increase in size. In place of the screw 8, a pressing plate made of a metal material having a U-shaped cross section elastically deformable and fixed to the upper end surface of the cutout portion 5a of the heat radiating member 5 by soldering or the like is provided. The heat may be dissipated through the pressing plate such that the pressing plate is always in contact with the upper end surface of the package 2 due to the deformation.

FIG. 3 is a sectional view showing a second embodiment of the present invention. In the second embodiment, the package 2
Ground electrode 2c and step 5c of cutout 5a of heat radiation member 5
And a heat radiating plate 10 having a U-shaped cross section and having a spring property is interposed therebetween. By doing so, the ground electrode portion 2c
The heat generated in the package 2 can be radiated to the heat radiating member 5 via the heat radiating plate 10. Further, since the ground electrode portion 2c of the semiconductor element is directly grounded via the heat radiating plate 7 without being grounded via the through hole 4a of the ground circuit 4, the parasitic inductance can be reduced, and the electrical characteristics can be stabilized. Can be achieved.

FIG. 4 is a sectional view showing a third embodiment of the present invention. In the third embodiment, a disk-shaped flange portion 8a having a shape larger than the shape of the screw 8 is integrally formed at the tip of the screw 8. By doing so, heat conduction from the package 2 can be performed more favorably, and therefore, heat can be more efficiently dissipated.

[0016]

As described above, according to the first aspect of the present invention,
According to the description, a package in which a semiconductor chip is sealed and provided with an input / output connection electrode section and a ground electrode section, a high-frequency input / output circuit and a ground circuit in which the input / output connection electrode section and the ground electrode section of the package are connected. A substrate that covers the package, and a heat-dissipating member that is interposed between the package and the housing and that dissipates heat generated by the semiconductor device through heat conduction , between the heat-dissipating member and the package. Up and down
A movable heat conducting member is provided, and the heat conducting member is
By forming a flange portion at the part that comes into contact with the package , the semiconductor device itself is not provided with a heat dissipation function, and the semiconductor device in which it is incorporated is provided with a heat dissipation member and a housing having a heat dissipation function. the big or because it is not necessary to provide a special heat dissipation structure to the semiconductor device, without the complicated structure of the semiconductor device itself, can remain small and lightweight. In addition,
You can adjust the heat conduction interposition member according to the height of the cage
Heat can be dissipated regardless of the package shape of the semiconductor element
Therefore, it is necessary to change the design of the same semiconductor device.
Can be used without any problems and the design man-hour can be reduced. Also semiconductor
The heat generated from the chip transfers the flange from the package.
Heat conduction to the heat radiating member and housing efficiently through
Since the heat is dissipated, the heat radiation efficiency is improved.

According to the second aspect of the present invention, the semiconductor
Body chip is enclosed, input / output connection electrode section and ground electrode
And the input / output connection of this package
A high-frequency input / output circuit in which the electrode section and the ground electrode section are connected;
A substrate having a ground circuit, and a housing covering the package
And the semiconductor interposed between the package and the housing.
A heat dissipating member that dissipates heat generated by the device by heat conduction.
In addition, since the heat dissipating member is arranged between the input and output connection electrode portions of the package , the heat dissipating member functions as a partition plate for shielding in a high frequency, so that the isolation between the high frequency input and output circuits can be increased. Since the electrical characteristics of the gain semiconductor element can be easily adjusted, stable performance can be obtained, and the heat dissipating member also has a function as a shielding plate. There is no such thing as insufficient shielding or an increase in size.

According to the third aspect of the present invention, the semiconductor
Body chip is enclosed, input / output connection electrode section and ground electrode
And the input / output connection of this package
A high-frequency input / output circuit in which the electrode section and the ground electrode section are connected;
A substrate having a ground circuit, and a housing covering the package
And the semiconductor interposed between the package and the housing.
A heat dissipating member that dissipates heat generated by the device by heat conduction.
Between the ground electrode of the package and the heat dissipating member.
The heat conductive interposition member that can be deformed
Cage ground electrode and heat dissipating member
And the heat conduction is improved.

According to the fourth aspect of the present invention, the semiconductor
Body chip is enclosed, input / output connection electrode section and ground electrode
And the input / output connection of this package
A high-frequency input / output circuit in which the electrode section and the ground electrode section are connected;
A substrate having a ground circuit, and a housing covering the package
And the semiconductor interposed between the package and the housing.
A heat dissipating member that dissipates heat generated by the device by heat conduction.
The heat radiating member and the housing are formed of a conductive member, and a conductive heat radiating plate is interposed between the ground electrode portion of the package and the heat radiating member. Therefore, the parasitic inductance can be reduced because the grounding is performed via the heat sink, and the electrical characteristics can be stabilized.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an entire semiconductor device according to the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a sectional view showing a second embodiment of the semiconductor device according to the present invention.

FIG. 4 is a sectional view showing a third embodiment of the semiconductor device according to the present invention.

FIG. 5 is a perspective view showing an entire conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Package, 2a ... Input connection electrode part, 2b ... Output connection electrode part, 2c ... Ground electrode part, 3 ... Dielectric substrate, 3a ... High frequency input circuit, 3b ... High frequency output circuit, 4 ... Ground Circuit, 4a through hole, 5 radiating member, 5a notch, 5b screw, 6 case, 7
Lid, 8 screws, 8a flange, 10 radiator plate.

Claims (4)

(57) [Claims] 1. A package in which a semiconductor chip is sealed and provided with an input / output connection electrode portion and a ground electrode portion, a high-frequency input / output circuit and a ground circuit connecting the input / output connection electrode portion and the ground electrode portion of the package. A substrate that covers the package, and a heat-dissipating member that is interposed between the package and the housing and that dissipates heat generated by the semiconductor device through heat conduction , between the heat-dissipating member and the package. On
The lower heat-existing heat conduction intervening member is provided.
That a flange is formed at the part that contacts the package
A semiconductor device characterized by the following. 2. A package enclosing a semiconductor chip and having an input / output connection electrode section and a ground electrode section, a high frequency input / output circuit and a ground circuit connecting the input / output connection electrode section and the ground electrode section of the package. A package that covers the package; and a heat radiating member interposed between the package and the case to radiate heat generated by the semiconductor device by heat conduction. A semiconductor device, which is disposed between connection electrode portions. 3. A package enclosing a semiconductor chip and having an input / output connection electrode section and a ground electrode section, a high-frequency input / output circuit and a ground circuit connecting the input / output connection electrode section and the ground electrode section of the package. wherein the substrate and a casing covering the package, said interposed between the package and the housing and a heat radiation member for radiating the heat generated heat conduction of the semiconductor device, and a ground electrode portion of the package Release
An elastically deformable heat conduction interposition member is provided between the heat member
A semiconductor device characterized by the above-mentioned. 4. A package in which a semiconductor chip is sealed and provided with an input / output connection electrode section and a ground electrode section, a high-frequency input / output circuit and a ground circuit for connecting the input / output connection electrode section and the ground electrode section of the package. A substrate provided with: a housing covering the package; and a heat radiating member interposed between the package and the housing to radiate heat generated by the semiconductor device by heat conduction. A semiconductor device comprising: a conductive member; and a conductive heat radiating plate interposed between the ground electrode portion of the package and the heat radiating member.