JP2811920B2 - Thin film synthesis method and thin film synthesis apparatus - Google Patents
Thin film synthesis method and thin film synthesis apparatusInfo
- Publication number
- JP2811920B2 JP2811920B2 JP15478690A JP15478690A JP2811920B2 JP 2811920 B2 JP2811920 B2 JP 2811920B2 JP 15478690 A JP15478690 A JP 15478690A JP 15478690 A JP15478690 A JP 15478690A JP 2811920 B2 JP2811920 B2 JP 2811920B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- synthesizing
- film synthesis
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は原料ガスのイオン化粒子の利用して高品質な
薄膜を、複写機、レーザープリンター等に用いられる感
光体に代表される光導電性基体上に合成する薄膜合成方
法および薄膜合成装置に関するものである。The present invention relates to a method for forming a high-quality thin film on a photoconductive substrate typified by a photoreceptor used in a copying machine, a laser printer, and the like by utilizing ionized particles of a raw material gas. And a thin film synthesizing apparatus.
従来の技術 以下に、ダイヤモンド状薄膜の合成について従来の技
術を説明する。2. Description of the Related Art A conventional technique for synthesizing a diamond-like thin film will be described below.
第２図は例えば、Thin Solid Films第35巻（1976年）
第255頁に示された従来の直流プラズマCVD法によるダイ
ヤモンド状薄膜の合成例である。直流プラズマCVD法は
装置構成が簡素であり、基体が電極と対向して配置され
るため、大面積基体への薄膜の均一合成が容易である等
の優れた特徴を有している。FIG. 2 shows, for example, Thin Solid Films Vol. 35 (1976)
This is an example of the synthesis of a diamond-like thin film by the conventional DC plasma CVD method shown on page 255. The DC plasma CVD method has simple features, such as a simple apparatus configuration, and has excellent features such as easy uniform synthesis of a thin film on a large-area substrate because the substrate is arranged to face the electrode.
第２図において、ダイヤモンド状薄膜15がその表面上
に合成される基体16は負電極17上に設置され、真空容器
12にメタンガスをガス供給源11から所望の圧力となるよ
うに供給する。しかる後に負電極17と正電極13との間に
直流電源19の調整で所望の電圧を印加すると、前記負電
極17と正電極13との間でメタンガスのプラズマ14が発生
する。In FIG. 2, a substrate 16 on which a diamond-like thin film 15 is synthesized is placed on a negative electrode 17 and a vacuum container
Methane gas is supplied to the gas supply source 12 from the gas supply source 11 to a desired pressure. Thereafter, when a desired voltage is applied between the negative electrode 17 and the positive electrode 13 by adjusting the DC power supply 19, a methane gas plasma 14 is generated between the negative electrode 17 and the positive electrode 13.
プラズマ14中にはダイヤモンド状薄膜15の構成元素で
ある炭素を含むイオン化粒子が存在し、このイオン化粒
子が負電極17方向に加速され、基体16上を照射すること
でダイヤモンド状薄膜15が期待16上に合成される。The plasma 14 contains ionized particles containing carbon, which is a constituent element of the diamond-like thin film 15, and these ionized particles are accelerated in the direction of the negative electrode 17 and irradiate the substrate 16, whereby the diamond-like thin film 15 is expected. Combined above.
発明が解決しようとする課題 ところが前記従来の技術では基体として光導電性基体
を用いて、その表面にダイヤモンド状薄膜を合成するこ
とは不可能であった。Problems to be Solved by the Invention However, in the above-mentioned conventional technology, it was impossible to synthesize a diamond-like thin film on the surface of a photoconductive substrate as the substrate.
その原因は、光導電性基体は光が照射されないと絶縁
性を示すため、従来の直流プラズマCVD法では光導電性
基体上にイオン化粒子がチャージアップしてしまい、炭
化水素ガスのプラズマが瞬時に消滅してしまうためであ
る。このためにプラズマが消滅してしまうと、イオン化
粒子の加速も行われなくなることは言うまでもない。The cause is that the photoconductive substrate exhibits insulation properties when not irradiated with light, and the ionized particles are charged up on the photoconductive substrate by the conventional DC plasma CVD method, and the plasma of the hydrocarbon gas is instantaneously generated. It is because they disappear. For this reason, it goes without saying that if the plasma disappears, the ionized particles will not be accelerated.
そのため、具体的には、例えば耐久寿命の向上が望ま
れている感光体に、その表面保護膜としてダイヤモンド
状薄膜を合成することは、以上記した従来の技術では不
可能であつた。Therefore, specifically, for example, it is impossible to synthesize a diamond-like thin film as a surface protective film on a photoreceptor whose durability life is desired to be improved by the above-described conventional technology.
課題を解決するための手段 上記課題を解決するために、請求項（１）記載の発明
にあっては、イオン化粒子の照射と同時に前記基体が光
導電性を示す光を前記基体表面に照射する様になすもの
である。Means for Solving the Problems To solve the above problems, in the invention described in claim (1), the substrate irradiates the surface of the substrate with light showing photoconductivity simultaneously with the irradiation of the ionized particles. It is something to do.
また請求項（２）記載の発明にあっては、ガス供給源
と、真空容器と、真空ポンプとイオン化粒子発生手段と
を有し、真空容器内に光導電性基体を設置する負電極
と、光が透過可能な正電極を基体に対向して設置すると
ともに、基体が光導電性を示す光を発生する光源を真空
容器内、もしくは真空容器外の少なくともいずれか一方
の空間に、正電極を介して設置して薄膜合成装置を構成
する様になすものである。Further, in the invention according to claim (2), a negative electrode having a gas supply source, a vacuum vessel, a vacuum pump and ionized particle generating means, and providing a photoconductive substrate in the vacuum vessel, A positive electrode through which light can pass is installed facing the substrate, and a light source that emits light in which the substrate exhibits photoconductivity is provided in the vacuum vessel or in at least one of the spaces outside the vacuum vessel. The thin-film synthesizing apparatus is configured by installing the thin-film synthesizing apparatus.
作 用 上記手段により、ダイヤモンド状薄膜の合成中に感光
体表面上に光を照射し、感光体に導電性を付与すること
が可能となる。その結果、感光体にはイオン化粒子によ
るチャージアップが発生しない。従って、炭化水素ガス
のプラズマは安定して持続し、またイオン化粒子が負電
極方向に加速され、感光体上を照射することでダイヤモ
ンド状薄膜の合成が可能となる。The above means makes it possible to irradiate light onto the photoreceptor surface during the synthesis of the diamond-like thin film, thereby imparting conductivity to the photoreceptor. As a result, charge-up due to ionized particles does not occur in the photoconductor. Accordingly, the plasma of the hydrocarbon gas is stably maintained, and the ionized particles are accelerated in the direction of the negative electrode, and the diamond-like thin film can be synthesized by irradiating the surface of the photoreceptor.
また請求項（２）記載の発明は、光が透過可能な正電
極を介して、感光体が光導電性を示す光源を前記真空容
器内、もしくは真空容器外の少なくともいずれか一方の
空間に設置した装置構成である。このため、従来の直流
プラズマCVD法の特徴を損なうことなく、かつ大面積の
感光体に対しても均一な光照射が可能となり、ダイヤモ
ンド状薄膜の大面積均一合成が可能である。According to the invention described in claim (2), a light source whose photoconductor exhibits photoconductivity is installed in at least one of the space inside the vacuum vessel or outside the vacuum vessel via a light-transmissive positive electrode. This is the device configuration. For this reason, it is possible to uniformly irradiate a large-area photoreceptor without deteriorating the features of the conventional DC plasma CVD method, and a large-area uniform synthesis of a diamond-like thin film is possible.
実施例 以下に第１図を用いて本発明の一実施例を示す。Embodiment An embodiment of the present invention will be described below with reference to FIG.
第１図において、４は光源であり、複写機に使用され
る感光体露光用のものを用いた。光が透過可能な正電極
としてはステンレスのメッシュ状正電極３を使用した。
イオン化粒子発生手段はメッシュ状正電極３と負電極８
と直流電源10である。In FIG. 1, reference numeral 4 denotes a light source, which is used for exposing a photosensitive member used in a copying machine. A stainless mesh positive electrode 3 was used as a positive electrode through which light could pass.
The ionized particle generating means includes a mesh-like positive electrode 3 and a negative electrode 8.
And DC power supply 10.
感光体７は負電極８上に設置され、真空容器２にメタ
ンガスをガス供給源１から0.2Torrの圧力となるように
供給する。しかる後に光源４を点灯し感光体７での光量
を7lux・secとした。そして負電極８と正電極3a、およ
びメッシュ状正電極３との間に直流電源10の調整で0.7k
Vの電圧を印加すると、メタンガスのプラズマ５が発生
し、ダイヤモンド状薄膜６が感光体７の表面に合成され
る。The photoreceptor 7 is provided on the negative electrode 8 and supplies methane gas to the vacuum vessel 2 from the gas supply source 1 so as to have a pressure of 0.2 Torr. Thereafter, the light source 4 was turned on, and the light amount at the photoconductor 7 was set to 7 lux · sec. Then, 0.7 k is adjusted between the negative electrode 8, the positive electrode 3a, and the mesh-type positive electrode 3 by adjusting the DC power supply 10.
When a voltage of V is applied, plasma 5 of methane gas is generated, and a diamond-like thin film 6 is synthesized on the surface of the photoconductor 7.
光源４の光量は上記実施例では、感光体７の表面にお
いて7lux・secとなるように調整したが、感光体７の光
感度特性、ダイヤモンド状薄膜の合成条件、薄膜の種
類、薄膜合成装置の寸法形状等々によって適宜調整され
る。In the above embodiment, the light amount of the light source 4 was adjusted to be 7 lux · sec on the surface of the photoreceptor 7. However, the photosensitivity characteristics of the photoreceptor 7, the conditions for synthesizing the diamond-like thin film, the type of the thin film, and the It is appropriately adjusted depending on the size and shape.
また、光が透過可能な正電極には、例えばITOなどの
透明導電性薄膜をガラス表面に合成したものも使用でき
る。Further, as the positive electrode through which light can be transmitted, a material obtained by synthesizing a transparent conductive thin film such as ITO on a glass surface can be used.
更に、上記実施例では、光源は真空容器２内に設置し
たが、真空容器２に透明窓を設けるとともに、大気中に
設けた光源からの光を透明窓を介して感光体上に照射す
るようになしてもよい。Further, in the above-described embodiment, the light source is installed in the vacuum container 2. However, a transparent window is provided in the vacuum container 2, and light from the light source provided in the atmosphere is irradiated onto the photoconductor through the transparent window. It may be.
発明の効果 以上記したように本発明によれば、光導電性基体上に
もダイヤモンド状薄膜等の高品質な各種薄膜が合成可能
となり工業的効果が大きい。Effects of the Invention As described above, according to the present invention, various high-quality thin films such as diamond-like thin films can be synthesized on a photoconductive substrate, and the industrial effect is large.
特に感光体へのダイヤモンド状薄膜の合成が可能とな
ったことは、感光体の耐久寿命を飛躍的に向上して電子
写真機器の発展に寄与すること極めて大きく、産業上の
効果が顕著である。In particular, the possibility of synthesizing a diamond-like thin film on a photoreceptor greatly contributes to the development of electrophotographic equipment by dramatically improving the durability life of the photoreceptor, and has a remarkable industrial effect. .
第１図は本発明の一実施例を示す薄膜合成装置の概略
図、第２図は従来例の薄膜合成装置の概略図である。 １……ガス供給源、２……真空容器、３……メッシュ状
正電、４……光源、５……プラズマ、６……ダイヤモン
ド状薄膜、７……感光体、８……負電極、９……真空ポ
ンプ、10……直流電源。FIG. 1 is a schematic view of a thin film synthesizing apparatus showing one embodiment of the present invention, and FIG. 2 is a schematic view of a conventional thin film synthesizing apparatus. 1 gas supply source 2 vacuum container 3 mesh positive electrode 4 light source 5 plasma 6 diamond thin film 7 photoreceptor 8 negative electrode 9 ... Vacuum pump, 10 ... DC power supply.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 16/00 - 16/56──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) C23C 16/00-16/56
Claims (2)
ン化粒子を照射して行なう薄膜合成方法であって、前記
イオン化粒子の照射時に、前記基体が光導電性を示す光
を前記基体表面に照射するようになした薄膜合成方法。1. A method for synthesizing a thin film, comprising irradiating a photoconductive substrate with ionized particles containing a constituent element of a thin film, wherein, when the ionized particles are irradiated, the substrate emits light showing photoconductivity on the surface of the substrate. A method of synthesizing a thin film so as to irradiate it.
と、イオン化粒子発生手段とからなる薄膜合成装置であ
って、前記真空容器内に光導電性基体を設置する負電極
と、光が透過可能な正電極を前記基体に対向して設置す
るとともに、前記基体が光導電性を示す光を発生する光
源を前記真空容器内、もしくは真空容器外の少なくとも
いずれか一方の空間に、前記正電極を介して設置した薄
膜合成装置。2. A thin film synthesizing apparatus comprising a gas supply source, a vacuum vessel, a vacuum pump, and ionized particle generating means, wherein a negative electrode for installing a photoconductive substrate in said vacuum vessel, A transmissive positive electrode is provided to face the base, and a light source for generating light showing photoconductivity of the base is provided in the vacuum container or at least one space outside the vacuum container. Thin film synthesis equipment installed via electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15478690A JP2811920B2 (en) | 1990-06-13 | 1990-06-13 | Thin film synthesis method and thin film synthesis apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15478690A JP2811920B2 (en) | 1990-06-13 | 1990-06-13 | Thin film synthesis method and thin film synthesis apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0445278A JPH0445278A (en) | 1992-02-14 |
| JP2811920B2 true JP2811920B2 (en) | 1998-10-15 |
Family
ID=15591870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15478690A Expired - Fee Related JP2811920B2 (en) | 1990-06-13 | 1990-06-13 | Thin film synthesis method and thin film synthesis apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2811920B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012209650B4 (en) | 2012-06-08 | 2014-10-23 | Schunk Kohlenstofftechnik Gmbh | Plasma assisted chemical vapor deposition process with increased plasma density |
-
1990
- 1990-06-13 JP JP15478690A patent/JP2811920B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0445278A (en) | 1992-02-14 |
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