JP2786747B2 - Semiconductor vibration / acceleration sensor - Google Patents
Semiconductor vibration / acceleration sensorInfo
- Publication number
- JP2786747B2 JP2786747B2 JP3018143A JP1814391A JP2786747B2 JP 2786747 B2 JP2786747 B2 JP 2786747B2 JP 3018143 A JP3018143 A JP 3018143A JP 1814391 A JP1814391 A JP 1814391A JP 2786747 B2 JP2786747 B2 JP 2786747B2
- Authority
- JP
- Japan
- Prior art keywords
- thick portion
- central
- portions
- thin
- acceleration sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば自動車の加速度
状態, 揺れの状態などを検出し、その検出信号を処理し
て各種制御などに使用される、特に３次元の振動あるい
は加速度を検出することができる半導体振動・加速度セ
ンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention detects, for example, an acceleration state and a shaking state of an automobile, processes the detection signal, and detects a three-dimensional vibration or acceleration used for various controls. The present invention relates to a semiconductor vibration / acceleration sensor.
【０００２】[0002]
【従来の技術】３次元の振動あるいは加速度を検出する
ことができる半導体振動・加速度センサとして特開昭63
−169078に開示されたものが知られている。図４はこの
半導体振動・加速度センサの平面図、図５はｘ方向成分
検出について説明するための図４のＡ−Ａにおける断面
図、図６はｚ方向成分検出について説明するための図４
のＡ−Ａにおける断面図である。図４において、５はそ
の平面形状が正方形で、厚肉状の中央厚肉部、６は中央
厚肉部５と所定の間隔を有し、その中央厚肉部５を囲う
ように口の字形に形成された厚肉状の周辺厚肉部であ
る。中央厚肉部５と周辺厚肉部６との間には、中央厚肉
部５の平面形状における正方形の各外辺の略中央より、
各辺の長さより短い所定の幅をもって周辺厚肉部６側に
のび、周辺厚肉部６と中央厚肉部５とを連結する薄肉状
の薄肉支持部８〜11が形成されている。なお、この薄肉
支持部８〜11の図中正のｚ方向側表面は、中央厚肉部５
および周辺厚肉部６の同表面と同一平面上に形成されて
いる。そして各々の薄肉支持部８〜11の上側にはピエゾ
抵抗素子である４個の歪ゲージからなる歪ゲージ群１〜
４が拡散などにより形成されており、また、各々の歪ゲ
ージ群１〜４は、例えば中央厚肉部５より周辺厚肉部６
側に向かう方向にその長手方向を有する２個の歪ゲージ
と、その方向に直交する方向にその長手方向を有する２
個の歪ゲージとからなり、互いに電気的に接続しフルブ
リッジを構成している。2. Description of the Related Art As a semiconductor vibration / acceleration sensor capable of detecting three-dimensional vibration or acceleration, Japanese Patent Laid-Open Publication No.
No. 169078 is known. 4 is a plan view of the semiconductor vibration / acceleration sensor, FIG. 5 is a cross-sectional view taken along the line AA in FIG. 4 for explaining x-direction component detection, and FIG. 6 is a diagram for explaining z-direction component detection.
FIG. 3 is a sectional view taken along line AA of FIG. In FIG. 4, 5 is a thick central thick portion having a square planar shape, 6 is a mouth-shaped portion having a predetermined distance from the central thick portion 5 and surrounding the central thick portion 5. This is a thick peripheral thick portion formed in the above. Between the central thick part 5 and the peripheral thick part 6, from the approximate center of each outer side of the square in the planar shape of the central thick part 5,
Thin peripheral support portions 8 to 11 are formed extending to the peripheral thick portion 6 side with a predetermined width shorter than the length of each side, and connecting the peripheral thick portion 6 and the central thick portion 5. The surface of the thin support portions 8 to 11 on the positive z direction side in the drawing is the central thick portion 5.
And on the same plane as the same surface of the peripheral thick portion 6. On the upper side of each of the thin supporting portions 8 to 11, a strain gauge group 1 including four strain gauges which are piezoresistive elements.
4 are formed by diffusion or the like, and each of the strain gauge groups 1 to 4 has, for example, a peripheral thick portion 6 rather than a central thick portion 5.
Two strain gauges having the longitudinal direction in the direction toward the side, and the two strain gauges having the longitudinal direction in the direction orthogonal to the direction.
And a plurality of strain gauges, which are electrically connected to each other to form a full bridge.
【０００３】振動, 加速度などによる力を受けて中央厚
肉部５および薄肉支持部８〜11が変位し、その変位状態
に応じた信号を歪ゲージ群１〜４によって電気信号の状
態で検出される。ここで振動, 加速度などによる力の
ｘ, ｙ方向成分は次のようにして検出される。すなわ
ち、例えばｘ方向成分について考えると、図５の断面図
に示すように中央厚肉部５の重心点Ｇと支持点Ｐ1 ( 支
持点Ｐ2 ) との間にはｚ方向において距離ｌのずれが生
じており、このずれのためにｘ方向に力が作用した場
合、支持点Ｐ1 は図中正のｚ方向へ変位し、支持点Ｐ2
は負のｚ方向へ変位する。従って、薄肉支持部９側と薄
肉支持部11では表面応力の加わり方が逆になる。すなわ
ち、薄肉支持部９側においては台座12に近接するほど圧
縮応力が作用し、中央厚肉部５に近接するほど引っ張り
応力が作用するのに対し、薄肉支持部11側においては、
台座12に近接するほど引っ張り応力が作用し、中央厚肉
部５に近接するほど圧縮応力が作用することになる。そ
こで、各々の薄肉支持部９, 11に形成される歪ゲージ群
２, ４が形成するブリッジ回路の出力信号の差を検出す
ることによりｘ方向に受ける力に応じた電気信号を得る
ことができる。なお、ｙ方向成分についてはその説明を
省略するが、前述したｘ方向成分における説明と同様に
考えることができる。The central thick portion 5 and the thin supporting portions 8 to 11 are displaced by a force due to vibration, acceleration, or the like, and signals corresponding to the displaced state are detected by the strain gauge groups 1 to 4 in the form of electric signals. You. Here, the components in the x and y directions of the force due to vibration, acceleration, and the like are detected as follows. That is, for example, considering the x-direction component, as shown in the cross-sectional view of FIG. 5, the distance l in the z direction is between the center of gravity G of the central thick portion 5 and the support point P 1 (support point P 2 ). When a shift has occurred and a force acts in the x direction due to this shift, the support point P 1 is displaced in the positive z direction in the figure, and the support point P 2
Is displaced in the negative z direction. Therefore, the manner in which the surface stress is applied is opposite between the thin supporting portion 9 and the thin supporting portion 11. That is, on the side of the thin supporting portion 9, a compressive stress acts on the pedestal 12, and on the side of the thin supporting portion 11, a compressive stress acts on.
The closer to the pedestal 12, the more tensile stress acts, and the closer to the central thick portion 5, the more compressive stress acts. Therefore, by detecting the difference between the output signals of the bridge circuits formed by the strain gauge groups 2 and 4 formed in the thin supporting portions 9 and 11, an electric signal corresponding to the force received in the x direction can be obtained. . The description of the y-direction component is omitted, but can be considered in the same manner as the description of the x-direction component described above.
【０００４】また、ｚ方向成分については、図６の断面
図に示すように、例えば負のｚ方向に力が作用した場
合、薄肉支持部９側と薄肉支持部11側には共に、台座12
に近接するほど引っ張り応力が作用し、中央厚肉部５に
近接するほど圧縮応力が作用する。また、図示はしない
が薄肉支持部８, 10側においても同様に応力が作用して
おり、従って、各々の薄肉支持部８〜11に形成される歪
ゲージ群１〜４が形成するブリッジ回路の出力信号の
和、あるいはその平均を検出することによりｚ方向に受
ける力に応じた電気信号を得ることができる。As for the z-direction component, as shown in the sectional view of FIG. 6, for example, when a force acts in the negative z-direction, both the pedestal 12 and the thin support portion 11 are mounted on the thin support portion 9 and the thin support portion 11 side.
, A tensile stress acts, and a compressive stress acts as it approaches the central thick portion 5. Although not shown, the stress also acts on the thin supporting portions 8 and 10 in the same manner, and therefore, the bridge circuits formed by the strain gauge groups 1 to 4 formed on the thin supporting portions 8 to 11 respectively. By detecting the sum of the output signals or the average thereof, an electric signal corresponding to the force received in the z direction can be obtained.
【０００５】[0005]
【発明が解決しようとする課題】前述の半導体振動・加
速度センサにおいては、以下のような問題点がある。図
４〜図６において振動, 加速度などのｘ方向成分は薄肉
支持部９, 11の変形によって、これらに形成された歪ゲ
ージ群の出力信号の差として検出されるが、薄肉支持部
９, 11と直角方向にある薄肉支持部８, 10が反時計方向
に捩じれ、この捩じれは薄肉支持部９, 11の変形を妨
げ、ｘ方向成分の検出感度を低下させるとともに、薄肉
支持部８, 10がその捩じれで出力信号を発生する。この
出力信号は干渉出力であり検出精度を低下させる。ｙ方
向成分に対しても全く同様である。また、ｚ方向成分は
薄肉支持部８〜11の変形によって、これらに形成された
歪ゲージ群の出力信号の和、あるいは平均で検出される
が、ｘ方向あるいはｙ方向の力による薄肉支持部８, 10
あるいは９, 11の捩じれによる出力信号が干渉出力とな
り検出精度が低下する。The aforementioned semiconductor vibration / acceleration sensor has the following problems. 4 to 6, the x-direction components such as vibration and acceleration are detected as a difference between the output signals of the strain gauge groups formed on the thin supporting portions 9 and 11 due to the deformation of the thin supporting portions 9 and 11. The thin support portions 8, 10 in a direction perpendicular to the direction are twisted in the counterclockwise direction, and this twist hinders the deformation of the thin support portions 9, 11 and lowers the detection sensitivity of the x-direction component. An output signal is generated by the twist. This output signal is an interference output and lowers detection accuracy. The same is true for the y-direction component. The z-direction component is detected as a sum or an average of the output signals of the strain gauge groups formed on the thin support portions 8 to 11 due to the deformation of the thin support portions 8 to 11. However, the thin support portion 8 due to a force in the x direction or the y direction is detected. , Ten
Alternatively, an output signal due to the torsion 9 or 11 becomes an interference output, and the detection accuracy decreases.
【０００６】本発明の目的は、前述の問題点を解決し、
検出感度が高く、かつ、ｘ, ｙ, ｚ方向間の干渉出力を
なくし、検出精度を向上した半導体・加速度センサを提
供することにある。An object of the present invention is to solve the above-mentioned problems,
An object of the present invention is to provide a semiconductor / acceleration sensor having high detection sensitivity, eliminating interference output between the x, y, and z directions and improving detection accuracy.
【０００７】[0007]
【課題を解決するための手段】前述の課題を解決するた
めに、本発明においては、半導体材料よりなり、四角形
の厚肉状の中央厚肉部と、この中央厚肉部と所定の間隔
を有し、かつ、この中央厚肉部を囲うように形成された
周辺厚肉部と、前記中央厚肉部の各外辺とそれぞれ対面
する周辺厚肉部の各内辺とを連結し、かつ、それぞれ前
記外辺と平衡な部分を有する４個の薄肉支持部と、中央
厚肉部の一外角およびこの外角と対角線上にある他外角
とそれぞれ対面する周辺厚肉部の各内隅とを連結する２
個の薄肉支持部とを備え、前記各薄肉支持部にそれぞれ
歪ゲージが形成されるようにする。In order to solve the above-mentioned problems, in the present invention, a rectangular thick central portion made of a semiconductor material and a predetermined distance from the central thick portion are defined. And having a peripheral thick portion formed so as to surround the central thick portion, and connecting each inner edge of the peripheral thick portion facing each outer edge of the central thick portion, and The four thin supporting portions each having a portion balanced with the outer side, the outer corner of the central thick portion, and each inner corner of the peripheral thick portion facing the other outer angle diagonally opposite to the outer angle. Connect 2
And a plurality of thin supporting portions, and a strain gauge is formed on each of the thin supporting portions.
【０００８】[0008]
【作用】本発明によれば、半導体材料よりなる四角形の
中央厚肉部の各外辺とそれぞれ対面する周辺厚肉部の各
内辺とを連結する４個の各薄肉支持部の一部にそれぞれ
前記各外辺と平行な部分を設けるようにしたので振動,
加速度などによる力が加わった場合、そのｙ方向成分に
よって図３に示すように中央厚肉部は矢印Ｐ方向に動か
され、薄肉支持部231, 232は圧縮あるいは引っ張りを受
け、薄肉支持部233, 234は横方向に曲げられる。この場
合、これら薄肉支持部の一部に設けられた外辺と平行な
部分によって、薄肉支持部231, 232はこの外辺と平行な
部分が主として曲げられ、それ以外の部分は軸方向に力
が加わるためほとんど変形せず、薄肉支持部233, 234は
この外辺と平行な部分は軸方向に力が加わるためほとん
ど変形せず、それ以外の個所が主として曲がるようにな
る。これによって、薄肉支持部231, 232の上側に形成さ
れた歪ゲージによってｙ方向成分が検出できるととも
に、薄肉支持部233, 234の上側に形成された歪ゲージは
出力信号を発生しないので、干渉出力は生じない。ま
た、薄肉支持部233, 234は中央厚肉部と周辺厚肉部の間
隔を比較的大きくとることによって横方向の曲げ剛性を
弱めることができるので、中央厚肉部の変位を妨げない
ようにできる。また、ｘ方向成分については前述のｙ方
向成分における説明と同様に考えることができる。According to the present invention, a part of each of the four thin supporting portions connecting each outer side of the central thick portion of the square made of the semiconductor material and each inner side of the peripheral thick portion facing each other is provided. Vibration,
When a force due to acceleration or the like is applied, the central thick portion is moved in the direction of arrow P as shown in FIG. 3 by the y-direction component, and the thin support portions 231 and 232 undergo compression or tension, and the thin support portions 233 and 234 is bent laterally. In this case, the thin-walled supporting portions 231 and 232 are bent mainly by the portions parallel to the outer side provided on a part of the thin-walled supporting portions, and the other portions are forced in the axial direction by the other portions. Is applied, so that the thin supporting portions 233 and 234 are hardly deformed because a force is applied in the axial direction in a portion parallel to the outer side, and the other portions mainly bend. As a result, the y-direction component can be detected by the strain gauges formed above the thin supporting portions 231 and 232, and the strain gauge formed above the thin supporting portions 233 and 234 does not generate an output signal. Does not occur. In addition, since the thin supporting portions 233 and 234 can reduce the bending rigidity in the lateral direction by setting a relatively large interval between the central thick portion and the peripheral thick portion, so as not to hinder the displacement of the central thick portion. it can. Further, the x-direction component can be considered in the same manner as described above for the y-direction component.
【０００９】また、ｚ方向成分は中央厚肉部の一外角お
よびこの外角と対角線上にある他外角とそれぞれ対面す
る周辺厚肉部の各内隅とを連結する２個の薄肉支持部の
241,242の上側に形成された歪ゲージによって中央厚肉
部21および薄肉支持部241, 242の変位状態を検出するよ
うにしたので、ｘ方向成分, ｙ方向成分の検出と独立し
ており、これら成分検出用の歪ゲージの出力信号からの
干渉出力は生じない。更に、歪ゲージを中央厚肉部の外
角と周辺厚肉部の内隅とをむすぶ線上に形成することに
より、この線はｘ方向成分, ｙ方向成分の力が加わった
場合の薄肉支持部の横方向の曲がりの中心線であり、こ
の上側に形成された歪ゲージはｘ方向成分, ｙ方向成分
の力に対し出力信号を発生せず、これらｘ方向成分, ｙ
方向成分の力による干渉出力も生じない。The z-direction component is defined by two thin supporting portions connecting one outer angle of the central thick portion and each inner corner of the peripheral thick portion facing the outer angle diagonally to another outer angle.
Since the displacement state of the central thick part 21 and the thin supporting parts 241 and 242 is detected by the strain gauge formed on the upper side of 241,242, these components are independent of the detection of the x-direction component and the y-direction component. No interference output is generated from the output signal of the strain gauge for detection. Furthermore, by forming the strain gauge on a line extending between the outer corner of the central thick part and the inner corner of the peripheral thick part, this line becomes the thin supporting part when a force in the x-direction component and the y-direction component is applied. The strain gauge formed on the upper side does not generate an output signal with respect to the force in the x-direction component and the y-direction component.
There is no interference output due to the force of the directional component.
【００１０】[0010]
【実施例】図１は本発明の半導体振動・加速度センサの
一実施例を示し、図１(a) は平面図、図１(b) は図１
(a) のＡ−Ａにおける断面図、図１(c) は図１(a) のＢ
−Ｂにおける断面図である。図１において21は半導体材
料よりなる四角形で厚肉状の中央厚肉部、22は中央厚肉
部21と所定の間隔を有し、その中央厚肉部を囲うように
口の字形に形成された厚肉状の半導体材料よりなる周辺
厚肉部である。中央厚肉部21と周辺厚肉部22との間に
は、四角形の中央厚肉部の各外辺から、これら外辺の長
さより短い所定の幅をもって周辺厚肉部22側にのび、周
辺厚肉部22と中央厚肉部21とを連結する薄肉状の４個の
半導体材料よりなる薄肉支持部231 〜234が形成されて
いる。これら薄肉支持部231 〜234 の一部には、それぞ
れ前記各外辺と平行な部分231A〜234Aが設けられてい
る。また、中央厚肉部の一外角およびこの外角と対角線
上にある他外角とそれぞれ対面する周辺厚肉部の各内隅
とを連結する薄肉状の２個の薄肉支持部241, 242が形成
されている。薄肉支持部231 〜234 の外辺と平行な部分
231A〜234Aの上側にはそれぞれ歪ゲージ251, 252と253,
254と263, 264と261, 262が形成され、薄肉支持部241,
242の上側にはそれぞれ歪ゲージ271, 272と273, 274と
が形成されている。これら歪ゲージは同じ軸上にある、
例えばｙ軸上にある薄肉支持部231, 232に形成されてい
る歪ゲージ251, 252, 253, 254を一組として図２に示す
ようなフルブリッジを構成している。また、ｘ軸上にあ
る薄肉支持部233, 234に形成されている歪ゲージ261, 2
62, 263, 264も同様である。更に、四角形の中央厚肉部
の外角に設けられた薄肉支持部241,242に形成されてい
る歪ゲージ271, 272, 273, 274を一組として同様フルブ
リッジを構成している。1 shows an embodiment of a semiconductor vibration / acceleration sensor according to the present invention. FIG. 1 (a) is a plan view, and FIG.
1A is a cross-sectional view taken along the line AA, and FIG.
It is sectional drawing in -B. In FIG. 1, reference numeral 21 denotes a quadrangular thick thick central portion made of a semiconductor material, 22 denotes a square-shaped portion having a predetermined distance from the central thick portion 21 and surrounding the central thick portion. Peripheral thick portion made of a thick semiconductor material. Between the central thick part 21 and the peripheral thick part 22, from each outer side of the square central thick part, it extends to the peripheral thick part 22 side with a predetermined width shorter than the length of these outer sides, and Thin supporting portions 231 to 234 made of four thin semiconductor materials connecting the thick portion 22 and the central thick portion 21 are formed. Some of the thin supporting portions 231 to 234 are provided with portions 231A to 234A, respectively, which are parallel to the outer sides. Also, two thin-walled thin supporting portions 241 and 242 are formed to connect one outer angle of the central thick portion and each inner corner of the peripheral thick portion facing the other outer angle diagonally to the outer angle. ing. A part parallel to the outer edge of the thin supporting parts 231 to 234
On the upper side of 231A to 234A are strain gauges 251, 252 and 253, respectively.
254 and 263, 264 and 261, 262 are formed, and the thin support portion 241,
On the upper side of 242, strain gauges 271, 272 and 273, 274 are formed, respectively. These strain gauges are on the same axis,
For example, a set of strain gauges 251, 252, 253, 254 formed on the thin supporting portions 231, 232 on the y-axis constitutes a full bridge as shown in FIG. The strain gauges 261, 2 formed on the thin supporting portions 233, 234 on the x-axis
The same applies to 62, 263, and 264. Further, the strain gauges 271, 272, 273, 274 formed on the thin supporting portions 241, 242 provided at the outer corners of the quadrangular central thick portion constitute a full bridge similarly.
【００１１】振動, 加速度などによる力を受けて中央厚
肉部21および薄肉支持部231 〜234および241 〜242 が
変位し、その変位状態に応じた信号を歪ゲージ251 〜25
4, 261〜264 および271 〜274 によって電気信号の状態
で検出される。ここで、振動, 加速度などによる力の
ｘ, ｙ方向成分は次のようにして検出される。すなわ
ち、例えばｙ方向成分について考えると図３に示すよう
に中央厚肉部は矢印Ｐ方向に動かされ、薄肉支持部231,
232は圧縮あるいは引っ張りを受け、薄肉支持部233, 2
34は横方向に曲げられる。この場合、これら薄肉支持部
の一部に設けられた外辺と平行な部分231A〜234Aによっ
て、薄肉支持部231, 232はこの外辺と平行な部分が主と
して曲げられ、それ以外の部分は軸方向に力が加わるた
めほとんど変形せず、薄肉支持部233, 234はこの外辺と
平行な部分は軸方向に力が加わるためほとんど変形せず
それ以外の個所が主として曲がるようになる。これによ
って、薄肉支持部231, 232の外辺と平行な部分231A, 23
2Aの上側に形成された歪ゲージ251 〜254 によりｙ方向
成分が検出できるとともに、薄肉支持部233, 234の外辺
と平行な部分233A, 234Aの上側に形成された歪ゲージ26
1 〜264 は出力信号を発生しないので干渉出力は生じな
い。また、薄肉支持部233,234 は中央厚肉部21と周辺厚
肉部22の間隔を比較的大きくとることによって、その横
方向の曲げ剛性を弱めることができるので、中央厚肉部
の変位を妨げないようにできる。また、ｘ方向成分につ
いては前述のｙ方向成分における説明と同様に考えるこ
とができる。The central thick part 21 and the thin supporting parts 231-234 and 241-242 are displaced by the force of vibration, acceleration or the like, and a signal corresponding to the displaced state is transmitted to the strain gauges 251-25.
4, 261 to 264 and 271 to 274 are detected in the state of electric signals. Here, the x and y direction components of the force due to vibration, acceleration, and the like are detected as follows. That is, for example, considering the y-direction component, the central thick portion is moved in the direction of arrow P as shown in FIG.
232 is compressed or stretched and the thin supports 233, 2
34 is bent laterally. In this case, the thin supporting portions 231 and 232 are bent mainly at the portions parallel to the outer sides by the portions 231A to 234A parallel to the outer side provided at a part of the thin supporting portions, and the other portions are the shafts. Since the force is applied in the direction, the portion is hardly deformed, and the thin-walled support portions 233, 234 are hardly deformed in the portion parallel to the outer side because the force is applied in the axial direction, and the other portions mainly bend. Thereby, the portions 231A, 23 parallel to the outer sides of the thin support portions 231, 232 are formed.
The components in the y-direction can be detected by the strain gauges 251 to 254 formed on the upper side of 2A, and the strain gauge 26 formed on the upper side of the portions 233A and 234A parallel to the outer sides of the thin supporting portions 233 and 234.
1 to 264 do not generate an output signal, so that no interference output occurs. The thin supporting portions 233 and 234 can reduce the bending rigidity in the lateral direction by relatively setting the space between the central thick portion 21 and the peripheral thick portion 22 so that the displacement of the central thick portion is not hindered. I can do it. Further, the x-direction component can be considered in the same manner as described above for the y-direction component.
【００１２】また、ｚ方向成分は中央厚肉部21の一外角
およびこの外角と対角線上にある他外角とそれぞれ対面
する周辺厚肉部の各内隅とを連結する２個の薄肉支持部
241,242の上側に形成された歪ゲージ271〜274 によっ
て、中央厚肉部のｚ方向の変位から検出する。これはｘ
方向成分, ｙ方向成分の検出と独立しており、これら成
分の出力信号からの干渉出力は生じない。更に、歪ゲー
ジを中央厚肉部の外角とこれと対面する周辺厚肉部の内
隅とをむすぶ線上に形成することにより、この線はｘ方
向成分,ｙ方向成分の力が加わった場合の薄肉支持部の
横方向の曲がりの中心線であり、この上側に形成された
歪ゲージはｘ方向成分, ｙ方向成分の力に対し出力信号
を発生せず、干渉出力は生じない。The z-direction component is composed of two thin supporting portions connecting one outer angle of the central thick portion 21 and other outer angles on the diagonal line to the inner corners of the peripheral thick portions facing each other.
Strain gauges 271 to 274 formed above 241 and 242 detect the displacement of the central thick part in the z direction. This is x
The detection of the directional component and the y-direction component is independent, and no interference output is generated from the output signals of these components. Further, by forming the strain gauge on a line connecting the outer corner of the central thick part and the inner corner of the peripheral thick part facing the strain gauge, this line is formed when an x-direction component and a y-direction component force are applied. This is the center line of the lateral bending of the thin supporting portion, and the strain gauge formed on the upper side does not generate an output signal with respect to the force of the x-direction component and the y-direction component, and does not generate interference output.
【００１３】[0013]
【発明の効果】本発明によれば、半導体振動・加速度セ
ンサにおいて、四角形の中央厚肉部の各外辺とそれぞれ
対面する周辺厚肉部の各内辺とを連結する４個の各薄肉
支持部の一部にそれぞれ前記各外辺と平行な部分を設
け、この外辺と平行な部分の上側にそれぞれ歪ゲージを
形成し、振動・加速度などによる力のｘ方向成分あるい
はｙ方向成分を検出し、また、中央厚肉部の一外角およ
びこの外角と対角線上にある他外角とそれぞれ対面する
周辺厚肉部の各内隅とを連結する２個の各薄肉支持部の
上側にそれぞれ歪ゲージを形成し、ｚ方向成分を検出す
るようにしたので、振動・加速度を極めて高感度で、か
つ、ｘ方向成分, ｙ方向成分, ｚ方向成分間の干渉がな
く高精度で検出可能となる。According to the present invention, in a semiconductor vibration / acceleration sensor, four thin supporting members for connecting each outer edge of a square central thick portion and each inner edge of a peripheral thick portion facing each other are provided. A part parallel to each of the outer sides is provided in a part of the part, and a strain gauge is formed above the part parallel to the outer side to detect an x-direction component or a y-direction component of a force due to vibration, acceleration, or the like. In addition, a strain gauge is provided above each of the two thin supporting portions which connect one outer angle of the central thick portion and each inner corner of the peripheral thick portion facing the other angle which is diagonally opposite to the outer angle. Is formed, and the z-direction component is detected, so that the vibration / acceleration can be detected with extremely high sensitivity and with high accuracy without interference between the x-direction component, the y-direction component, and the z-direction component.
【図１】本発明の半導体振動・加速度センサの一実施例
を示し、図１(a) は平面図、図１(b) は図１(a) のＡ−
Ａにおける断面図、図１(c) は図１(a) のＢ−Ｂにおけ
る断面図FIG. 1 shows an embodiment of a semiconductor vibration / acceleration sensor according to the present invention. FIG. 1 (a) is a plan view, and FIG.
1A is a cross-sectional view taken along a line BB in FIG. 1A.
【図２】図１の歪ゲージの接続を示す回路図FIG. 2 is a circuit diagram showing connection of the strain gauge of FIG. 1;
【図３】図１に示す本発明の半導体振動・加速度センサ
の動作を説明するための平面図FIG. 3 is a plan view for explaining the operation of the semiconductor vibration / acceleration sensor of the present invention shown in FIG. 1;
【図４】従来の半導体振動・加速度センサの一例を示す
平面図FIG. 4 is a plan view showing an example of a conventional semiconductor vibration / acceleration sensor.
【図５】図４に示す従来の半導体振動・加速度センサの
ｘ方向成分検出動作を説明するための図４のＡ−Ａにお
ける断面図5 is a cross-sectional view taken along the line AA of FIG. 4 for explaining an x-direction component detection operation of the conventional semiconductor vibration / acceleration sensor shown in FIG.
【図６】図４に示す従来の半導体振動・加速度センサの
ｚ方向成分検出動作を説明するための図４のＡ−Ａにお
ける断面図6 is a cross-sectional view taken along the line AA of FIG. 4 for explaining the z-direction component detection operation of the conventional semiconductor vibration / acceleration sensor shown in FIG.
２１ 中央厚肉部 ２２ 周辺厚肉部 ２３１ 薄肉支持部 ２３１Ａ 外辺と平行部分 ２３１ 薄肉支持部 ２３１Ａ 外辺と平行部分 ２３３ 薄肉支持部 ２３３Ａ 外辺と平行部分 ２３４ 薄肉支持部 ２３４Ａ 外辺と平行部分 ２４１ 薄肉支持部 ２４２ 薄肉支持部 ２５１ 歪ゲージ ２５２ 歪ゲージ ２５３ 歪ゲージ ２５４ 歪ゲージ ２６１ 歪ゲージ ２６２ 歪ゲージ ２６３ 歪ゲージ ２６４ 歪ゲージ ２７１ 歪ゲージ ２７２ 歪ゲージ ２７３ 歪ゲージ ２７４ 歪ゲージ 21 Central Thick Part 22 Peripheral Thick Part 231 Thin Support 231A Part Parallel to Outer Side 231 Thin Support 231A Parallel to Outer 233 Thin Support 233A Parallel to Outer 234 Thin Support 234A Parallel to Outer 241 Thin support portion 242 Thin support portion 251 Strain gauge 252 Strain gauge 253 Strain gauge 254 Strain gauge 261 Strain gauge 262 Strain gauge 263 Strain gauge 264 Strain gauge 271 Strain gauge 272 Strain gauge 273 Strain gauge 274 Strain gauge
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−186676（ＪＰ，Ａ) 特開 平１−301176（ＪＰ，Ａ) 特開 昭63−169078（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) G01P 15/10 G01P 15/12 H01L 29/84──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-186676 (JP, A) JP-A-1-301176 (JP, A) JP-A-63-169078 (JP, A) (58) Investigation Field (Int.Cl. 6 , DB name) G01P 15/10 G01P 15/12 H01L 29/84
Claims (3)
央厚肉部と、この中央厚肉部と所定の間隔を有し、か
つ、この中央厚肉部を囲うように形成された周辺厚肉部
と、前記中央厚肉部の各外辺とそれぞれ対面する周辺厚
肉部の各内辺とを連結し、かつ、それぞれ前記外辺と平
行な部分を有する４個の薄肉支持部と、中央厚肉部の一
外角およびこの外角と対角線上にある他外角とそれぞれ
対面する周辺厚肉部の各内隅とを連結する２個の薄肉支
持部とを備え、前記各薄肉支持部にそれぞれ歪ゲージが
形成されることを特徴とする半導体振動・加速度セン
サ。1. A rectangular thick central portion made of a semiconductor material and a peripheral portion formed to have a predetermined distance from the central thick portion and to surround the central thick portion. A thick portion and four thin supporting portions connecting the respective outer edges of the central thick portion and the respective inner edges of the peripheral thick portions facing each other, and each having a portion parallel to the outer edge; Two thin supporting portions that connect one outer angle of the central thick portion and each inner corner of the peripheral thick portion facing the outer angle and the other outer angle that is diagonally opposite to the outer angle. A semiconductor vibration / acceleration sensor wherein a strain gauge is formed.
において、中央厚肉部の各外辺とそれぞれ対面する周辺
厚肉部の各内辺とを連結し、かつ、それぞれ前記外辺と
平行な部分を有する４個の各薄肉支持部に形成される歪
ゲージは各薄肉支持部の外辺と平行な部分の上側にそれ
ぞれ形成されることを特徴とする半導体振動・加速度セ
ンサ。2. The semiconductor vibration / acceleration sensor according to claim 1, wherein each outer side of the central thick part is connected to each inner side of the peripheral thick part facing each other, and each is parallel to the outer side. The semiconductor vibration / acceleration sensor is characterized in that the strain gauges formed on each of the four thin supporting portions having various portions are formed above portions parallel to the outer sides of the thin supporting portions.
において、中央厚肉部の一外角およびこの外角と対角線
上にある他外角とそれぞれ対面する周辺厚肉部の各内隅
とを連結する２個の各薄肉支持部に形成される歪ゲージ
は各薄肉支持部の中央厚肉部の外角とこれと対面する周
辺厚肉部の内隅とをむすぶ線上の上側に形成されること
を特徴とする半導体振動・加速度センサ。3. The semiconductor vibration / acceleration sensor according to claim 1, wherein one outer angle of the central thick portion and another outer angle on a diagonal line with the outer angle are connected to respective inner corners of the peripheral thick portion facing each other. The strain gauge formed on each of the two thin supporting portions is formed on an upper side on a line connecting an outer angle of a central thick portion of each thin supporting portion and an inner corner of a peripheral thick portion facing the outer portion. Semiconductor vibration / acceleration sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018143A JP2786747B2 (en) | 1991-02-12 | 1991-02-12 | Semiconductor vibration / acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018143A JP2786747B2 (en) | 1991-02-12 | 1991-02-12 | Semiconductor vibration / acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04256864A JPH04256864A (en) | 1992-09-11 |
| JP2786747B2 true JP2786747B2 (en) | 1998-08-13 |
Family
ID=11963389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3018143A Expired - Fee Related JP2786747B2 (en) | 1991-02-12 | 1991-02-12 | Semiconductor vibration / acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2786747B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734105A (en) | 1992-10-13 | 1998-03-31 | Nippondenso Co., Ltd. | Dynamic quantity sensor |
-
1991
- 1991-02-12 JP JP3018143A patent/JP2786747B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04256864A (en) | 1992-09-11 |
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