JP2783575B2 - Exposure method and exposure apparatus for circuit manufacturing - Google Patents
Exposure method and exposure apparatus for circuit manufacturingInfo
- Publication number
- JP2783575B2 JP2783575B2 JP1031413A JP3141389A JP2783575B2 JP 2783575 B2 JP2783575 B2 JP 2783575B2 JP 1031413 A JP1031413 A JP 1031413A JP 3141389 A JP3141389 A JP 3141389A JP 2783575 B2 JP2783575 B2 JP 2783575B2
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- transmission
- exposure apparatus
- exposure
- reticle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Description
【発明の詳細な説明】 ［技術分野］ 本発明は回路製造のための露光方法及び露光装置に関
するものであり、特にKrFエキシマレーザー等の紫外線
光源からの紫外線を用いる回路製造のための露光方法及
び露光装置に関するものである。Description: TECHNICAL FIELD The present invention relates to an exposure method and an exposure apparatus for manufacturing a circuit, and more particularly to an exposure method and an exposure method for manufacturing a circuit using ultraviolet light from an ultraviolet light source such as a KrF excimer laser. The present invention relates to an exposure apparatus.
［従来技術］ 近年、LSIの高集積化に伴ない、大強度の遠紫外線を
放射するエキシマレーザ等のレーザを露光用光源として
用いた露光装置の実用化が要望されている。[Prior Art] In recent years, with the increasing integration of LSIs, there has been a demand for practical use of an exposure apparatus using a laser such as an excimer laser that emits high-intensity deep ultraviolet light as an exposure light source.
エキシマレーザは大強度の紫外線レーザ光を放射する
ため、露光装置のスループットの向上に極めて有用であ
るが、この大強度の紫外線レーザ光により光学系の特性
が劣化することが判明した。An excimer laser emits a high-intensity ultraviolet laser beam, which is extremely useful for improving the throughput of an exposure apparatus. However, it has been found that the characteristics of an optical system are deteriorated by the high-intensity ultraviolet laser beam.
即ち、光学系を構成する光学部品には、紫外線レーザ
光を効率良く伝達するために反射防止膜或いは増反射膜
がコーティングされているのであるが、これらの光学薄
膜が紫外線レーザ光の照射による雰囲気（大気）中のガ
スの化学反応のために、劣化するのである。That is, the optical components constituting the optical system are coated with an anti-reflection film or an anti-reflection film in order to efficiently transmit the ultraviolet laser light. It degrades due to the chemical reaction of the gas in the (atmosphere).
［発明の概要］ 本発明は、上記問題点に鑑みて成されたものであり、
特に劣化し易い伝送光学系の光学部品が劣化することの
ない回路製造のための露光方法及び露光装置を提供する
ことを目的とする。[Summary of the Invention] The present invention has been made in view of the above problems,
In particular, it is an object of the present invention to provide an exposure method and an exposure apparatus for manufacturing a circuit in which an optical component of a transmission optical system which is easily deteriorated does not deteriorate.
本発明は、上記目的を達成するために、光源からの紫
外線を伝送光学系により照明光学系に入射させ、該照明
光学系により前記紫外線でレチクルを照明することによ
って前記レチクルの回路パターンを投影光学系によりウ
エハ上に投影する段階を有する回路製造のための露光方
法であって、前記伝送光学系の光学部品の周囲を不活性
ガスで満たすようにしている。In order to achieve the above object, the present invention is directed to projecting a circuit pattern of the reticle by projecting ultraviolet rays from a light source into an illumination optical system by a transmission optical system and illuminating the reticle with the ultraviolet rays by the illumination optical system. An exposure method for manufacturing a circuit having a step of projecting onto a wafer by a system, wherein the periphery of an optical component of the transmission optical system is filled with an inert gas.
また本発明は、上記目的を達成するために、光源から
の紫外線を伝送光学系により照明光学系に入射させ、該
照明光学系により前記紫外線でレチクルを照明すること
によって前記レチクルのパターンを投影光学系によりウ
エハ上に投影する露光装置であって、前記伝送光学系の
光学部品の周囲を不活性ガスで満たすようにしている。Also, in order to achieve the above object, the present invention provides a projection optical system that projects ultraviolet light from a light source into an illumination optical system by a transmission optical system and illuminates the reticle with the ultraviolet light by the illumination optical system. An exposure apparatus for projecting onto a wafer by a system, wherein an optical component of the transmission optical system is filled with an inert gas.
以下、実施例に基づいて、本発明に関して詳述する。 Hereinafter, the present invention will be described in detail based on examples.
［実施例］ 第１図は本発明の露光装置全体の構成図である。Ａは
露光光学系を有する露光装置本体を示す。１はKrFエキ
シマレーザであり、防振クッション４上のレーザ定盤３
上に配置されたXYθステージ２上に固定されている。Ｂ
はレーザ１からの紫外線レーザ光20を露光装置本体の光
学系へ伝送する伝送系であり、図示されたミラー５を含
む複数個の光学部品で構成されている。この伝送系の詳
細は後述する。６は照明光学系、９は半導体製造用の回
路パターンが描かれたレチクル、90はレチクルホルダ、
10はレチクル９の回路パターンを投影する為の投影レン
ズ、11はレンズ支持台、12はウェハ、13はウェハ12を吸
着固定するチャック、14はXYステージ、15はステッパー
定盤、16は防振クッションである。[Embodiment] FIG. 1 is a configuration diagram of an entire exposure apparatus of the present invention. A indicates an exposure apparatus main body having an exposure optical system. Reference numeral 1 denotes a KrF excimer laser, and a laser surface plate 3 on an anti-vibration cushion 4
It is fixed on the XYθ stage 2 arranged above. B
Is a transmission system for transmitting the ultraviolet laser light 20 from the laser 1 to the optical system of the exposure apparatus main body, and is constituted by a plurality of optical parts including the illustrated mirror 5. Details of this transmission system will be described later. 6 is an illumination optical system, 9 is a reticle on which a circuit pattern for semiconductor manufacturing is drawn, 90 is a reticle holder,
10 is a projection lens for projecting the circuit pattern of the reticle 9, 11 is a lens support, 12 is a wafer, 13 is a chuck for holding the wafer 12 by suction, 14 is an XY stage, 15 is a stepper surface plate, and 16 is vibration proof. It is a cushion.
エキシマレーザ１から射出したレーザ光20は、伝送系
Ｂを通過して露光装置本体Ａの照明光学系６に入射す
る。そして、照明光学系６でビーム径を拡大された後、
レチクル９、投影レンズ10を経て、12のウェハ上に到達
する。The laser beam 20 emitted from the excimer laser 1 passes through the transmission system B and enters the illumination optical system 6 of the exposure apparatus main body A. After the beam diameter is enlarged by the illumination optical system 6,
Through the reticle 9 and the projection lens 10, the light reaches the wafer 12.
照明光学系６と投影レンズ10から成る露光用光学系
は、ステッパー定盤15に固定されたレンズ支持台11によ
ってすべて一体化されて固定されているため、露光装置
本体Ａ内での各光学系の相対位置は実質的に不変であ
る。レチクル９上には前述のように回路パターンが描か
れており、レーザ光で、照明することにより、投影レン
ズ10を介して1/5に縮小されてウェハ12上に転写され
る。Since the exposure optical system composed of the illumination optical system 6 and the projection lens 10 is all integrated and fixed by the lens support 11 fixed to the stepper base 15, each optical system in the exposure apparatus main body A is fixed. Are substantially unchanged. The circuit pattern is drawn on the reticle 9 as described above, and is illuminated with a laser beam, is reduced to 1/5 via the projection lens 10, and is transferred onto the wafer 12.
ウエハ12は、ウエハチャック13上に真空吸着されてお
り、ウエハチャック13は、ステッパー定盤15上に設られ
た可動のXYステージ14上に固定されている。ウエハ12を
XYステージ14により互いに直交するＸおよびＹの２方向
に搬送することができ、縮小されたパターンを、ウエハ
上の任意の位置に転写することができる。The wafer 12 is vacuum-sucked on a wafer chuck 13, and the wafer chuck 13 is fixed on a movable XY stage 14 provided on a stepper base 15. Wafer 12
The XY stage 14 can carry the wafer in two directions, X and Y, which are orthogonal to each other, and transfer the reduced pattern to an arbitrary position on the wafer.
通常、ウエハ12上には数十ショットの縮小パターンが
転写されるため、XYステージ14をＸまたはＹ方向に移動
させては、レーザ光を照射して転写をするという動作を
くり返し行うことになる。Usually, since a reduced pattern of several tens of shots is transferred onto the wafer 12, the operation of moving the XY stage 14 in the X or Y direction and irradiating a laser beam to perform the transfer is repeated. .
第２図は伝送系Ｂの具体的な構成を示す断面図であ
る。第２図において、１はレーザ、６は照明光学系であ
り、第１図のものと同一部材である。伝送系Ｂは、ミラ
ー５、プリズム７、レンズ８が光軸に沿って配列された
伝送光学系とこの伝送光学系を密封するカバー30とウィ
ンドウ（窓）31とから成り、カバー30とウィンドウ31で
密封手段を構成する。伝送光学系の各光学部品5,7,8
は、反射防止膜（プリズム7,レンズ８）や増反射膜（ミ
ラー5,プリズム７）が表面に形成されており、これらの
光学薄膜膜の作用でレーザ光の伝送効率を高めている。FIG. 2 is a sectional view showing a specific configuration of the transmission system B. In FIG. 2, reference numeral 1 denotes a laser, and 6 denotes an illumination optical system, which are the same members as those in FIG. The transmission system B includes a transmission optical system in which a mirror 5, a prism 7, and a lens 8 are arranged along the optical axis, a cover 30 for sealing the transmission optical system, and a window (window) 31, and the cover 30 and the window 31. Constitutes the sealing means. Each optical component of the transmission optical system 5, 7, 8
Has an anti-reflection film (prism 7, lens 8) and an anti-reflection film (mirror 5, prism 7) formed on the surface, and the action of these optical thin films enhances the transmission efficiency of laser light.
カバー30はアルミニウムなどの金属から成り、その内
面（伝送光学系側の面）は黒色アルマイトを塗布するこ
とによりレーザ光を吸収できるようになっている。ま
た、伝送系Ｂの光入出射口には前述のようにウィンドウ
31が設けられており、これにより伝送光学系は大気から
遮断される。ウィンドウ31はレーザ光に対して透明なガ
ラス板で構成され、ここではSiO2から成るガラス板を用
いている。The cover 30 is made of a metal such as aluminum, and its inner surface (the surface on the side of the transmission optical system) is coated with black alumite so that the laser beam can be absorbed. In addition, the light input / output port of the transmission system B has a window as described above.
31 is provided to isolate the transmission optics from the atmosphere. The window 31 is made of a glass plate transparent to laser light, and here, a glass plate made of SiO 2 is used.
カバー30とウィンドウ31で形成される空間中には、大
気の代りにN2ガスが封入されており、伝送系Ｂ周囲の大
気圧より幾分高めの圧力を与えられている。従って、伝
送系Ｂ周囲から伝送系Ｂ内部の空間にガスが入り込むこ
とはなく、ホコリやゴミなどの伝送系Ｂ内部への進入を
防止している。伝送系Ｂ内部の空間中に封入するガス
は、N2ガスの他にArガスやHeガス等の他の不活性ガスも
使用できる。このような不活性ガスで伝送光学系の各光
学部品5,7,8が包まれているので、紫外線レザ光照射さ
れても、光学部品5,7,8にコーティングしてある各種の
光学薄膜が大気中の成分の化学反応により劣化すること
がなく、レーザ光を効率良く露光装置本体Ａまで伝送で
きる。N 2 gas is sealed in the space formed by the cover 30 and the window 31 instead of the atmosphere, and a pressure slightly higher than the atmospheric pressure around the transmission system B is applied. Accordingly, gas does not enter the space inside the transmission system B from around the transmission system B, thereby preventing dust and dirt from entering the inside of the transmission system B. As the gas sealed in the space inside the transmission system B, other inert gas such as Ar gas and He gas can be used in addition to N 2 gas. Since each optical component 5, 7, 8 of the transmission optical system is wrapped with such an inert gas, various optical thin films coated on the optical components 5, 7, 8 even when irradiated with ultraviolet laser light. Can be efficiently transmitted to the exposure apparatus main body A without being deteriorated by the chemical reaction of the components in the atmosphere.
第３図は第１図及び第２図で示した伝送系Ｂの外観図
であり、伝送系Ｂのカバー30にはガス供給口35とガス吹
出口37が取付けられている。ガス吹出口37はフィルタ36
と共にカバー30の所定位置に設けられており、フィルタ
36を介して伝送系Ｂ内部の空気中のN2ガスを外部へ放出
する。一方、ガス供給口35はガス導入管39を介して不活
性ガス供給装置38とつながっており、装置38からのN2ガ
スがガス供給口35を介して伝送系Ｂ内部へ送り込まれる
のである。FIG. 3 is an external view of the transmission system B shown in FIGS. 1 and 2. The cover 30 of the transmission system B has a gas supply port 35 and a gas outlet 37 attached thereto. Gas outlet 37 is filter 36
Is provided at a predetermined position of the cover 30 together with the filter.
The N 2 gas in the air inside the transmission system B is released to the outside via 36. On the other hand, the gas supply port 35 is connected to an inert gas supply device 38 via a gas introduction pipe 39, and N 2 gas from the device 38 is sent into the transmission system B via the gas supply port 35.
第３図では簡単に図示してあるが、装置38には、N2ガ
スの温度・湿度・圧力を調整するための調整装置が設け
られており、これらの装置により、定温、定湿、定圧の
N2ガスを伝送系Ｂ内部の空間に送り込んでいる。従っ
て、伝送系Ｂの内部の伝送光学系は常に一定の環境下に
置かれることになり、伝送系Ｂ周囲の大気圧変動や温湿
度の変動に関係なく、伝送光学系の光学特性が一定に維
持される。このため、照明光学系６へ同じ状態（ビーム
系、拡がり角等）のレーザ光を常に供給でき、露光装置
の性能を一定に維持できる。Although simply shown in FIG. 3, the device 38 is provided with adjusting devices for adjusting the temperature, humidity, and pressure of the N 2 gas. of
N 2 gas is sent into the space inside the transmission system B. Therefore, the transmission optical system inside the transmission system B is always placed in a constant environment, and the optical characteristics of the transmission optical system are kept constant irrespective of fluctuations in the atmospheric pressure and temperature and humidity around the transmission system B. Will be maintained. Therefore, laser light in the same state (beam system, divergence angle, etc.) can always be supplied to the illumination optical system 6, and the performance of the exposure apparatus can be kept constant.
また、レーザ光の一部が、伝送光学系の各光学部品5,
7,8で散乱されると、これによって生じた散乱光がカバ
ー30の内面の黒色アルマイトを照射し、カバー30の内面
からゴミを発生する可能性があるが、ここでは、N2ガス
を伝送系Ｂ内部の空間中で循間させた後フィルタ36を介
してガス吹出口37からN2ガスを放出しているため、これ
らのゴミをフィルタ36により吸着し、除去することがで
きる。従って、伝送系Ｂ内部の空間（雰囲気）を常に清
浄な状態に保ち、伝送光学系の光学性能を劣化させるこ
とがない。In addition, a part of the laser light is transmitted to each optical component 5, 5 of the transmission optical system.
When scattered at 7,8, whereby the scattered light is irradiated with black alumite in the inner surface of the cover 30 occurs, there is a possibility of generating a dust from the inner surface of the cover 30, where the transmission of N 2 gas Since the N 2 gas is released from the gas outlet 37 through the filter 36 after being circulated in the space inside the system B, these dusts can be adsorbed and removed by the filter 36. Therefore, the space (atmosphere) inside the transmission system B is always kept clean, and the optical performance of the transmission optical system is not deteriorated.
本実施例において、伝送系Ｂは露光装置本体Ａに固定
されている。従って、今までの説明では伝送系Ｂ内部を
大気から遮断する構成だけに関して言及したが、伝送系
Ｂに加えて本体Ａの照明光学系６に対してもこのような
構成を採ることができる。照明光学系６は伝送系Ｂから
のレーザ光を受けてレーザ光の径（ビーム径）を拡大し
てレチクル９に向けるものであるから、伝送系Ｂと比較
するとエネルギ密度が低いレーザ光を伝送することにな
るが、大気から隔離して不活性ガス雰囲気中に系を置く
ことは、照明光学系６の性能を維持するのに極めて有効
である。In this embodiment, the transmission system B is fixed to the exposure apparatus main body A. Therefore, in the description so far, only the configuration for shielding the inside of the transmission system B from the atmosphere has been described. However, such a configuration can be adopted for the illumination optical system 6 of the main body A in addition to the transmission system B. The illumination optical system 6 receives the laser light from the transmission system B and enlarges the diameter (beam diameter) of the laser light toward the reticle 9, so that the laser light having a lower energy density than the transmission system B is transmitted. However, placing the system in an inert gas atmosphere away from the atmosphere is extremely effective in maintaining the performance of the illumination optical system 6.
第１図に示した露光装置は、ステッパーと呼ばれる投
影型の露光装置であったが、本発明はこの種の装置に限
定されるものではない。従って、コンタクト方式やプロ
キシミティ方式の露光装置、或いは光源としてkrFエキ
シマレーザ以外のレーザを用いる露光装置や加工装置等
の各種機器に適用できる。The exposure apparatus shown in FIG. 1 is a projection type exposure apparatus called a stepper, but the present invention is not limited to this type of apparatus. Therefore, the present invention can be applied to various devices such as a contact type or proximity type exposure apparatus, an exposure apparatus using a laser other than a krF excimer laser as a light source, and a processing apparatus.
［発明の効果］ 以上、本発明によれば、紫外線の光路中に設けた光学
部品の周囲を不活性ガスで満たすことにより、光学部品
の劣化をなくすことができる。[Effects of the Invention] As described above, according to the present invention, deterioration of an optical component can be eliminated by filling the periphery of the optical component provided in the optical path of ultraviolet light with an inert gas.
第１図は本発明の露光装置の全体構成を示す概略図。 第２図は伝送系Ｂの構成を示す断面図。 第３図は伝送系Ｂの外観を示す図。 Ａ……露光装置本体 Ｂ……伝送系 １……レーザ 30……カバー 31……窓 38……不活性ガス供給装置。 FIG. 1 is a schematic diagram showing the overall configuration of an exposure apparatus according to the present invention. FIG. 2 is a sectional view showing a configuration of a transmission system B. FIG. 3 is a diagram showing an appearance of a transmission system B. A: Exposure device body B: Transmission system 1: Laser 30: Cover 31: Window 38: Inactive gas supply device.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮原 正行 神奈川県川崎市中原区今井上町53番地 キヤノン株式会社小杉事業所内 (56)参考文献 特開 昭60−79357（ＪＰ，Ａ) 特開 昭61−164639（ＪＰ，Ａ) 特開 昭62−65833（ＪＰ，Ａ) 特開 昭59−120393（ＪＰ，Ａ) 特開 昭62−15547（ＪＰ，Ａ) 特開 昭61−164639（ＪＰ，Ａ) 特開 昭62−15547（ＪＰ，Ａ) 特開 昭60−133728（ＪＰ，Ａ) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masayuki Miyahara 53 Imaiue-cho, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Canon Corporation Kosugi Office (56) References JP-A-60-79357 (JP, A) JP-A-61 JP-A-164639 (JP, A) JP-A-62-65833 (JP, A) JP-A-59-120393 (JP, A) JP-A-62-15547 (JP, A) JP-A-61-164639 (JP, A) JP-A-62-15547 (JP, A) JP-A-60-133728 (JP, A)
Claims (6)
光学系に入射させ、該照明光学系により前記紫外線でレ
チクルを照明することによって前記レチクルの回路パタ
ーンを投影光学系によりウエハ上に投影する段階を有す
る回路製造のための露光方法であって、前記伝送光学系
の光学部品の周囲を不活性ガスで満たすことを特徴とす
る回路製造のための露光方法。An ultraviolet ray from a light source is made incident on an illumination optical system by a transmission optical system, and the reticle is illuminated by the ultraviolet ray by the illumination optical system so that a circuit pattern of the reticle is projected onto a wafer by a projection optical system. An exposure method for manufacturing a circuit, comprising: a step of filling the periphery of an optical component of the transmission optical system with an inert gas.
ガスで満たすことを特徴とする請求項１の回路製造のた
めの露光方法。2. An exposure method for manufacturing a circuit according to claim 1, wherein the periphery of the optical component of said illumination optical system is also filled with an inert gas.
を特徴とする請求項１の回路製造のための露光方法。3. The method according to claim 1, wherein said light source comprises an excimer laser.
光学系に入射させ、該照明光学系により前記紫外線でレ
チクルを照明することによって前記レチクルのパターン
を投影光学系によりウエハ上に投影する露光装置であっ
て、前記伝送光学系の光学部品の周囲を不活性ガスで満
たすことを特徴とする露光装置。4. An exposure system in which ultraviolet rays from a light source are incident on an illumination optical system by a transmission optical system, and the reticle is illuminated with the ultraviolet rays by the illumination optical system so that a pattern of the reticle is projected onto a wafer by a projection optical system. An exposure apparatus, wherein the periphery of an optical component of the transmission optical system is filled with an inert gas.
ガスで満たすことを特徴とする請求項４の露光装置。5. The exposure apparatus according to claim 4, wherein the periphery of the optical component of the illumination optical system is filled with an inert gas.
を特徴とする請求項４の露光装置。6. An exposure apparatus according to claim 4, wherein said light source comprises an excimer laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1031413A JP2783575B2 (en) | 1989-02-10 | 1989-02-10 | Exposure method and exposure apparatus for circuit manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1031413A JP2783575B2 (en) | 1989-02-10 | 1989-02-10 | Exposure method and exposure apparatus for circuit manufacturing |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7180070A Division JP2644705B2 (en) | 1995-07-17 | 1995-07-17 | Device manufacturing method and exposure apparatus |
| JP10020844A Division JP2911864B2 (en) | 1998-02-02 | 1998-02-02 | Device manufacturing method and exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02210813A JPH02210813A (en) | 1990-08-22 |
| JP2783575B2 true JP2783575B2 (en) | 1998-08-06 |
Family
ID=12330572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1031413A Expired - Lifetime JP2783575B2 (en) | 1989-02-10 | 1989-02-10 | Exposure method and exposure apparatus for circuit manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2783575B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243120A (en) * | 1992-02-28 | 1993-09-21 | Nikon Corp | Laser optical device |
| BE1007851A3 (en) * | 1993-12-03 | 1995-11-07 | Asml Lithography B V | EXPOSURE UNIT WITH ANTI-POLLUTION DEVICE AND A PHOTOLITHOGRAPHIC DEVICE EQUIPPED WITH SUCH AN EXPOSURE UNIT. |
| JP3221226B2 (en) * | 1994-03-30 | 2001-10-22 | キヤノン株式会社 | Illumination apparatus and projection exposure apparatus using the same |
| JP4011643B2 (en) | 1996-01-05 | 2007-11-21 | キヤノン株式会社 | Semiconductor manufacturing equipment |
| JP3950537B2 (en) | 1997-12-19 | 2007-08-01 | キヤノン株式会社 | Projection exposure apparatus and device manufacturing method |
| JPH11204411A (en) * | 1998-01-19 | 1999-07-30 | Nikon Corp | Coating development aligner |
| AU2958699A (en) * | 1998-03-31 | 1999-10-18 | Nikon Corporation | Optical device and exposure system equipped with optical device |
| US6765647B1 (en) | 1998-11-18 | 2004-07-20 | Nikon Corporation | Exposure method and device |
| JP2004186179A (en) | 2002-11-29 | 2004-07-02 | Canon Inc | Aligner |
| JP2006222130A (en) * | 2005-02-08 | 2006-08-24 | Nsk Ltd | Exposure apparatus |
| JP4724537B2 (en) * | 2005-11-16 | 2011-07-13 | キヤノン株式会社 | Exposure equipment |
| JP2011107572A (en) * | 2009-11-20 | 2011-06-02 | Hitachi High-Technologies Corp | Proximity exposure apparatus, method for protecting optical component of proximity exposure apparatus, and method for manufacturing display panel substrate |
| JP5366019B2 (en) * | 2010-08-02 | 2013-12-11 | 株式会社ニコン | Transmission optical system, illumination optical system, exposure apparatus, and device manufacturing method |
| JP5859242B2 (en) * | 2011-08-05 | 2016-02-10 | 株式会社竹中工務店 | Vibration isolation system |
| JP5604458B2 (en) * | 2012-01-27 | 2014-10-08 | 株式会社ジャパンディスプレイ | Laser annealing equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58128781A (en) * | 1982-01-27 | 1983-08-01 | Hitachi Ltd | Laser generator |
| JPS59120393A (en) * | 1982-12-28 | 1984-07-11 | Toshiba Corp | Laser working device |
-
1989
- 1989-02-10 JP JP1031413A patent/JP2783575B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02210813A (en) | 1990-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2783575B2 (en) | Exposure method and exposure apparatus for circuit manufacturing | |
| US6279249B1 (en) | Reduced particle contamination manufacturing and packaging for reticles | |
| US7423724B2 (en) | Exposure apparatus and device manufacturing method | |
| TWI465857B (en) | Lighting optics, exposure devices and parts manufacturing methods | |
| US20010026355A1 (en) | Exposure apparatus, exposure method, and device manufacturing method | |
| JP2006128188A (en) | Substrate carrying apparatus, substrate carrying method and exposure apparatus | |
| US20080024751A1 (en) | Reticle holding member, reticle stage, exposure apparatus, projection-exposure method and device manufacturing method | |
| JP3306961B2 (en) | Exposure apparatus and exposure method | |
| US20050030504A1 (en) | Exposure apparatus | |
| TWI265384B (en) | Lithographic apparatus and device manufacturing method | |
| JP2644705B2 (en) | Device manufacturing method and exposure apparatus | |
| JP2004303808A (en) | Aligner, exposure method, and film structure | |
| US7068352B2 (en) | Exposure apparatus | |
| JP2911864B2 (en) | Device manufacturing method and exposure apparatus | |
| JPH1165094A (en) | Containing case, exposure device, and device manufacturing device | |
| US20050157279A1 (en) | Light source unit, exposure apparatus, and device manufacturing method | |
| WO2003105203A1 (en) | Exposure system and exposure method | |
| US7212273B2 (en) | Exposure apparatus and method of producing device | |
| JPH01265513A (en) | Reduction projection aligner | |
| US7251014B2 (en) | Exposing method, exposing apparatus and device manufacturing method utilizing them | |
| US7053989B2 (en) | Exposure apparatus and exposure method | |
| JP2000200745A (en) | Projection aligner | |
| TW200307979A (en) | Gas purging method and exposure system, and device production method | |
| JP2005079555A (en) | Diaphragm device and exposure device | |
| WO2002093626A1 (en) | Aligning method and aligner, and method and system for conveying substrate |