JP2783260B2 - Board - Google Patents

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Publication number
JP2783260B2
JP2783260B2 JP8232729A JP23272996A JP2783260B2 JP 2783260 B2 JP2783260 B2 JP 2783260B2 JP 8232729 A JP8232729 A JP 8232729A JP 23272996 A JP23272996 A JP 23272996A JP 2783260 B2 JP2783260 B2 JP 2783260B2
Authority
JP
Japan
Prior art keywords
layer
wire bonding
gold
nickel
gold layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8232729A
Other languages
Japanese (ja)
Other versions
JPH09107000A (en
Inventor
宏 土師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8232729A priority Critical patent/JP2783260B2/en
Publication of JPH09107000A publication Critical patent/JPH09107000A/en
Application granted granted Critical
Publication of JP2783260B2 publication Critical patent/JP2783260B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、基板の回路パター
ンの電極となるパッドに施される金めっきを薄くして
も、後工程におけるワイヤボンディングなどのボンディ
ングを良好に行い得るようにした基板に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate capable of performing good bonding such as wire bonding in a later step even if a thin gold plating is applied to a pad serving as an electrode of a circuit pattern of the substrate. Things.

【０００２】[0002]

【従来の技術】例えばガラスエポキシを基材とする基板
に電極を形成しておき、この基板に半導体チップを搭載
し、半導体チップのパッドと、電極とを極細の金線から
なるワイヤにより接続するワイヤボンディング方法が広
く行われている。2. Description of the Related Art For example, electrodes are formed on a substrate made of, for example, glass epoxy, a semiconductor chip is mounted on the substrate, and pads of the semiconductor chip and the electrodes are connected to each other by wires made of ultrafine gold wires. Wire bonding methods are widely used.

【０００３】さて上記電極は、基板上に形成される銅素
地などから成る回路パターンのパッド上に金めっきが施
されてなる。ところが、金めっきを施す際、パッド上に
直接金めっきをすることはほとんどなく、パッドの素材
である銅原子などの金属原子の拡散による表面汚染を防
止するために、安価なニッケルを下地めっきとして施す
ことが多い。即ち、上記電極は、パッド上に中間層とし
てニッケル層を形成し、このニッケル層上に表層として
金層を形成して成る多層構造を有するものである。[0003] The above-mentioned electrodes are formed by applying gold plating on pads of a circuit pattern made of a copper base or the like formed on a substrate. However, when applying gold plating, there is almost no direct gold plating on the pad, and in order to prevent surface contamination due to diffusion of metal atoms such as copper atoms, which are the material of the pad, inexpensive nickel is used as a base plating. Often applied. That is, the electrode has a multilayer structure in which a nickel layer is formed as an intermediate layer on a pad, and a gold layer is formed as a surface layer on the nickel layer.

【０００４】ところで、上記電極にワイヤボンディング
が行われた後、ワイヤの下端部と電極との接合部分にお
いて、十分な接合強度が確保されていることが必要であ
る。ここで従来、経験的にこの接合強度は金層の厚さに
より変化するものであって、十分な接合強度を有するた
めには金層を厚く（例えば０．５μｍ以上）する必要が
あると考えられており、実際厚い金層を形成したうえで
ワイヤボンディングが行われていた。By the way, after wire bonding is performed on the above-mentioned electrode, it is necessary that a sufficient bonding strength is secured at a bonding portion between the lower end of the wire and the electrode. Here, conventionally, it has been empirically considered that this bonding strength varies depending on the thickness of the gold layer, and it is necessary to increase the thickness of the gold layer (for example, 0.5 μm or more) in order to have sufficient bonding strength. In practice, a thick gold layer was formed before wire bonding was performed.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、金層を
厚くしてワイヤボンディングを行うのでは、高価な金の
使用量が多くなるのでコスト高とならざるを得ないとい
う問題点があった。またこの種基板の電極には、ワイヤ
に限らず、チップの電極などもボンディングされるが、
この場合も十分な接合強度を確保する必要があるので金
層を厚くしなければならないというワイヤボンディング
と同様の問題点があった。However, when wire bonding is performed by increasing the thickness of the gold layer, the amount of expensive gold used increases, so that there is a problem that the cost must be increased. In addition, not only wires but also chip electrodes are bonded to the electrodes of this type of substrate,
Also in this case, it is necessary to secure a sufficient bonding strength, so that there is a problem similar to the wire bonding in that the gold layer must be thickened.

【０００６】本発明は、上記せん断強度を低下させる原
因を鋭意研究の上完成されたものであって、薄目の金層
によっても、ワイヤなどを十分な接合強度でボンディン
グできる基板を提供することを目的とする。The present invention has been completed after diligent research into the cause of the reduction in the shear strength, and provides a substrate capable of bonding wires and the like with a sufficient bonding strength even with a thin gold layer. Aim.

【０００７】[0007]

【課題を解決するための手段】本発明は、パッド上に中
間層としてニッケル層を形成し、このニッケル層上に表
層として金層を形成して成る電極が形成された基板であ
って、前記電極の表層部を薄く除去して水酸化ニッケル
成分を取除いたものである。According to the present invention, there is provided a substrate on which an electrode is formed by forming a nickel layer as an intermediate layer on a pad and forming a gold layer as a surface layer on the nickel layer. The surface layer of the electrode was thinly removed to remove the nickel hydroxide component.

【０００８】[0008]

【発明の実施の形態】さて後述するように、本発明者の
研究により、金層の表層部に存在しワイヤなどのボンデ
ィング対象物と金層との間に介在していた水酸化ニッケ
ルが上記接合強度を低下させる原因であることが判明し
た。よって上記構成の基板は、水酸化ニッケルを除去し
て、金層を薄目にしても、後工程で十分な接合強度を持
ったボンディングを行うことができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As will be described later, according to the study of the present inventor, nickel hydroxide present on the surface layer of a gold layer and interposed between a bonding object such as a wire and the gold layer has been described above. It has been found that this is a cause of lowering the bonding strength. Therefore, in the substrate having the above configuration, even if nickel hydroxide is removed and the gold layer is made thin, bonding with sufficient bonding strength can be performed in a later step.

【０００９】次に、本発明の実施の形態についての説明
に先立ち、電極の表層を除去しない場合の問題点につい
て、本発明者が行ったデータに基づいて説明する。Next, prior to the description of the embodiment of the present invention, a problem when the surface layer of the electrode is not removed will be described based on data performed by the present inventor.

【００１０】さて従来基板に電極を形成してからワイヤ
ボンディングを行うまでの工程は、図７及び図８に示す
ように行われている。まず図８（ａ）に示すように、基
板１上に電極２が形成される。この電極２は、図８
（ｂ）に拡大して示すように、下から順にパッドとして
の銅層２ａ、中間層としてのニッケル層２ｂ及び表層と
しての金層２ｃの多層構造からなる。次に、同図（ｃ）
に示すように、基板１の所定箇所に接着剤３を塗布し、
この接着剤３上に半導体チップ４を搭載する（同図
（ｄ））。そして、接着剤３の硬化のために、基板１を
キュア炉５内において加熱処理し、半導体チップ４を基
板１に固定する（同図（ｅ））。なお５ａはヒータであ
る。[0010] Conventionally, steps from the formation of electrodes on a substrate to the execution of wire bonding are performed as shown in FIGS. 7 and 8. First, an electrode 2 is formed on a substrate 1 as shown in FIG. This electrode 2 is shown in FIG.
As shown in an enlarged manner in (b), the multilayer structure has a copper layer 2a as a pad, a nickel layer 2b as an intermediate layer, and a gold layer 2c as a surface layer in order from the bottom. Next, FIG.
As shown in (1), an adhesive 3 is applied to a predetermined portion of the substrate 1,
The semiconductor chip 4 is mounted on the adhesive 3 (FIG. 4D). Then, in order to cure the adhesive 3, the substrate 1 is subjected to a heat treatment in a curing furnace 5 to fix the semiconductor chip 4 to the substrate 1 (FIG. 4E). 5a is a heater.

【００１１】次に、キュア炉５内から基板１を搬出し、
ワイヤボンディング装置によって、電極２と半導体チッ
プ４をワイヤ６で接続する（図８（ｆ））。なお、７は
ワイヤ６が挿通されたキャピラリツール、８はキャピラ
リツール７を揺動させるホーンである。Next, the substrate 1 is carried out of the curing furnace 5 and
The electrode 2 and the semiconductor chip 4 are connected by wires 6 by a wire bonding apparatus (FIG. 8F). Reference numeral 7 denotes a capillary tool into which the wire 6 is inserted, and reference numeral 8 denotes a horn for swinging the capillary tool 7.

【００１２】さて上記電極２の形成方法として、置換型
めっき法、還元型めっき法及び電解めっき法が知られて
いる。図９は、本発明者がこれらのめっき法のそれぞれ
について、キュア炉５内における加熱処理時間と、この
加熱処理時間だけ加熱処理した基板１について上記ワイ
ヤボンディングを行い、電極２とワイヤ６の接合部分に
おけるせん断強度を実験により求めた結果を示す。図９
（ａ）〜（ｃ）において、斜線部は常識的な加熱処理時
間を示し、またキュア炉５内の温度Ｔは１８０℃とし
た。なお同図中、厚さとは金層２ｃの厚さの意であり、
上記接合部分におけるせん断強度は、鎖線で示すように
約３０ＭＰａ程度必要とされている。As a method of forming the electrode 2, a displacement plating method, a reduction plating method, and an electrolytic plating method are known. FIG. 9 shows that, for each of these plating methods, the present inventors performed the above-described wire bonding on the heat treatment time in the curing furnace 5 and the substrate 1 that was heat-treated for the heat treatment time. The results obtained by experimentally determining the shear strength at the portion are shown. FIG.
In (a) to (c), hatched portions indicate common-sense heat treatment times, and the temperature T in the curing furnace 5 was set to 180 ° C. In the drawing, the thickness means the thickness of the gold layer 2c,
The shear strength at the joint is required to be about 30 MPa as shown by a chain line.

【００１３】さて、同図（ａ）に示すように、置換型め
っき法では極薄（厚さ０．０５μｍ）の金層２ｃが形成
されているものであるが、加熱処理を全く行わずにワイ
ヤボンディングすると、十分なせん断強度を確保でき
る。しかしながら、常識的な加熱処理を施した後にワイ
ヤボンディングを行うと、せん断強度が低下し、３０Ｍ
Ｐａを下回ってしまった。このように従来置換型めっき
法では、上記接合部分のせん断強度が不足するので、置
換型めっき法はワイヤボンディングを行うための電極の
形成には不適であるとされている。Now, as shown in FIG. 1A, the ultra-thin (0.05 μm thick) gold layer 2c is formed by the displacement plating method, but without performing any heat treatment. By wire bonding, sufficient shear strength can be secured. However, when wire bonding is performed after performing common-sense heat treatment, the shear strength is reduced, and 30M
It has fallen below Pa. As described above, in the conventional displacement plating method, the shear strength of the bonding portion is insufficient. Therefore, the displacement plating method is considered to be unsuitable for forming an electrode for performing wire bonding.

【００１４】次に、同図（ｂ）又は（ｃ）に示すよう
に、還元型めっき法又は電解めっき法においては、金層
２ｃの厚さが薄い（厚さ０．１５μｍ）電極に対して、
常識的な加熱処理後にワイヤボンディングを行なった場
合には、せん断強度が不足し、不適である。しかし、金
層２ｃを厚目（厚さ０．５μｍあるいは０．８μｍ）に
すると、上記加熱処理後にワイヤボンディングを行って
も、十分なせん断強度が確保できる。したがって、従来
ワイヤボンディングを行うための電極形成には、還元型
めっき法又は電解めっき法により金層２ｃを厚く形成す
る必要があるといわれている。ところが、このように厚
く金層２ｃを形成すると、コスト高となることは従来の
技術の項で述べた通りである。Next, as shown in FIG. 2B or 2C, in the reduction plating method or the electrolytic plating method, an electrode having a thin gold layer 2c (thickness of 0.15 μm) is used. ,
If wire bonding is performed after common-sense heat treatment, the shear strength is insufficient, which is inappropriate. However, when the gold layer 2c is thick (0.5 μm or 0.8 μm in thickness), a sufficient shear strength can be ensured even if wire bonding is performed after the above heat treatment. Therefore, conventionally, it is said that it is necessary to form a thick gold layer 2c by a reduction plating method or an electrolytic plating method in order to form an electrode for performing wire bonding. However, forming the thick gold layer 2c in this way increases the cost, as described in the section of the prior art.

【００１５】ここで本発明者は、金層２ｃの厚さの差に
よりどのような影響があるのかを調べるため、図９
（ａ）で説明した電極２（常識的な加熱処理済）につい
て、厚さ方向の濃度分布を求めた。その結果は、図１に
示す通りである。図中実線は金の濃度、破線はニッケル
の濃度、鎖線は酸素の濃度を示す。この酸素は、水酸化
ニッケルＮｉ（ＯＨ）2などに含まれる酸素である。図
１から、ニッケル層２ｂのニッケル又はその化合物の一
部が金層２ｃ内に拡散していることが判明した。さら
に、上記接合部分であるところの金層２ｃの表層部にお
いてニッケル又はその化合物の濃度が上昇していること
が分かった。Here, the inventor of the present invention examines how the difference in the thickness of the gold layer 2c has an effect, by referring to FIG.
The concentration distribution in the thickness direction was determined for the electrode 2 (the common-sense heat treatment) described in (a). The result is as shown in FIG. In the figure, the solid line indicates the concentration of gold, the broken line indicates the concentration of nickel, and the chain line indicates the concentration of oxygen. This oxygen is oxygen contained in nickel hydroxide Ni (OH) 2 or the like. From FIG. 1, it was found that nickel or a part of its compound in the nickel layer 2b was diffused into the gold layer 2c. Further, it was found that the concentration of nickel or its compound was increased in the surface layer portion of the gold layer 2c which was the above-mentioned joint portion.

【００１６】次に、本発明者は表層部に拡散したニッケ
ルがどのような結合状態により表層部に存在しているの
かを知るべく、エスカ分析装置により計測を行った。図
２はその結果を示すものである。すると、図２上段に示
すように、ニッケルは主として水酸化ニッケル（Ｎｉ
（ＯＨ）2）として存在していることがわかった。さら
に、金層２ｃの表層部を、通常のアルゴンガスのスパッ
タリング法により、約１０ｎｍだけ削ると、図２下段に
示すように水酸化ニッケル（Ｎｉ（ＯＨ）2）が顕著に
減少することも判明した。Next, the present inventor measured by using an Esca analyzer in order to know what kind of bonding state of the nickel diffused in the surface layer exists in the surface layer. FIG. 2 shows the result. Then, as shown in the upper part of FIG. 2, nickel is mainly nickel hydroxide (Ni
(OH) 2 ). Further, when the surface layer of the gold layer 2c was cut by about 10 nm by a normal argon gas sputtering method, it was also found that nickel hydroxide (Ni (OH) 2 ) was significantly reduced as shown in the lower part of FIG. did.

【００１７】さて、図３は金層２ｃとワイヤ６の接合部
分を、１００万倍に拡大して撮影した写真である。図３
中、Ａで示す黒っぽい部分がワイヤ６、Ｂで示す黒っぽ
い部分が金層２ｃである。そして、これらの境界に異物
Ｃ（白っぽく見える）が介在しており、上述のデータか
らこの異物Ｃは水酸化ニッケルであるものと考えられ
る。以上のところを総合すると、キュア炉５における加
熱処理により、ニッケル層２ｂ中のニッケルの一部が、
金層２ｃへ拡散し、しかも基板１に含まれる水分等と結
合して金層２ｃの表層部において水酸化ニッケルの形態
となって存在することにより、ワイヤ６（上述のように
極線の金線である）と電極２の金層２ｃとの接合を邪魔
し、その結果これらの接合部分のせん断強度が低下する
ものと考えられる。FIG. 3 is a photograph of the joint portion between the gold layer 2c and the wire 6 taken one million times larger. FIG.
Among them, the dark portion indicated by A is the wire 6, and the dark portion indicated by B is the gold layer 2c. Foreign matter C (appears whitish) intervenes at these boundaries, and from the above data, it is considered that the foreign matter C is nickel hydroxide. Summarizing the above, by the heat treatment in the curing furnace 5, a part of nickel in the nickel layer 2b becomes
The metal 6 is diffused into the gold layer 2c and combined with moisture and the like contained in the substrate 1 to be present in the form of nickel hydroxide on the surface layer of the gold layer 2c, thereby forming the wire 6 (the gold of the polar wire as described above). It is considered that this hinders the bonding between the electrode 2 and the gold layer 2c of the electrode 2, and as a result, the shear strength of these bonded portions is reduced.

【００１８】また金層２ｃの厚さが大である程加熱処理
前のせん断強度から加熱処理後のせん断強度が低下しに
くいのは、ニッケル又はその化合物が、金層２ｃ内に拡
散しても厚い金層２ｃに阻まれて表層部まで到達しにく
いためと思われる。The reason that the greater the thickness of the gold layer 2c, the lower the shear strength after the heat treatment from the shear strength before the heat treatment is that nickel or a compound thereof diffuses into the gold layer 2c. Presumably, it is difficult to reach the surface layer portion due to the thick gold layer 2c.

【００１９】さらに本発明者は、置換型めっき法により
形成された極薄（０．０５μｍ）の金層２ｃの表層部を
約１０ｎｍだけ除去した電極２（図２下段）について、
上記接合部分のせん断強度及びこの除去により新たに外
部に露呈する表層部について濃度分布を求めた。その結
果は、図４（ａ）、（ｂ）に示すとおりである。まず上
記接合部分のせん断強度について、熱処理前に十分なせ
ん断強度を有していたものが、２時間の熱処理により極
端にせん断強度を失うが、図４（ａ）の右欄のように、
表層部を除去した場合、十分なせん断強度が得られ、実
用に供し得るものであることが判明した。又表層部にお
ける濃度分布について、図４（ｂ）右欄に示すように、
表層部を除去すると、ニッケルの濃度及び酸素の濃度が
低下し、相対的に金の濃度が上昇している。これは、表
層部の水酸化ニッケル（Ｎｉ（ＯＨ）2）が取り除かれ
たためと考えられる。The present inventor further studied the electrode 2 (lower part in FIG. 2) obtained by removing the surface layer of the ultrathin (0.05 μm) gold layer 2c formed by the displacement plating method by about 10 nm.
The shear strength of the above-mentioned joint and the concentration distribution of the surface layer newly exposed to the outside by the removal were determined. The results are as shown in FIGS. 4 (a) and 4 (b). First, regarding the shear strength of the above-mentioned joint portion, one having a sufficient shear strength before the heat treatment loses the shear strength extremely by the heat treatment for 2 hours, but as shown in the right column of FIG.
When the surface layer was removed, it was found that sufficient shear strength was obtained and that the material could be used practically. Regarding the concentration distribution in the surface layer, as shown in the right column of FIG.
When the surface layer is removed, the concentration of nickel and the concentration of oxygen decrease, and the concentration of gold relatively increases. This is probably because nickel hydroxide (Ni (OH) 2 ) in the surface layer was removed.

【００２０】さて上記実験は、従来ワイヤボンディング
に用いる電極の形成方法としては不適とされていた置換
型めっき法により極薄（厚さ０．０５μｍ）の金層２ｃ
を形成した場合について行った。そして、このような極
薄の金層であっても、表層部を除去して水酸化ニッケル
を取除けば十分なせん断強度が得られることが判明し
た。もちろん、還元型めっき法又は電解めっき法によ
り、より厚目の金層を形成した場合でも、表層部の除去
により同様の効果を得ることができ、これらのめっき法
によることも本手段に含まれるものである。In the above experiment, the ultra-thin (0.05 μm thick) gold layer 2c was formed by a displacement plating method which was previously unsuitable as a method of forming an electrode used for wire bonding.
Was performed in the case where was formed. It has been found that even with such an extremely thin gold layer, a sufficient shear strength can be obtained by removing the surface layer and removing nickel hydroxide. Of course, even when a thicker gold layer is formed by the reduction plating method or the electrolytic plating method, the same effect can be obtained by removing the surface layer portion, and these plating methods are also included in the present means. Things.

【００２１】次に、図５、図６を参照しながら、本発明
の実施の形態を説明する。図５において、本実施の形態
では従来手段（図７）に対し、キュア工程とワイヤボン
ディング工程との間に、スパッタリング工程を行う点が
相違する。即ち、図６（ｆ）で示すように、本実施の形
態ではアルゴンガスのスパッタリング装置Ａにより、電
極２の金層２ｃの表層部の一部を除去して水酸化ニッケ
ルを取除くものである。これにより、上述したように薄
厚の金層２ｃによっても十分なせん断強度を得ることが
できる。Next, an embodiment of the present invention will be described with reference to FIGS. 5, the present embodiment is different from the conventional means (FIG. 7) in that a sputtering step is performed between a curing step and a wire bonding step. That is, as shown in FIG. 6F, in the present embodiment, a part of the surface layer of the gold layer 2c of the electrode 2 is removed by the argon gas sputtering apparatus A to remove nickel hydroxide. . Thereby, sufficient shear strength can be obtained even with the thin gold layer 2c as described above.

【００２２】又図示した実施の形態のほかに、キュア炉
５を例えばＮ2キュア炉など不活性ガスを充満させた雰
囲気のものとして、水酸化ニッケルの形成を抑制する、
ワイヤボンディング装置への搬送系を還元炉型にする、
ワイヤボンディング装置にタンピング装置を付加するな
どの手段も有効である。またこの種基板の電極には、ワ
イヤに限らず、チップのアウターリードなどの電極もボ
ンディングされるが、本発明の基板はこのようなボンデ
ィングにもワイヤボンディングと同様に適用でき、ワイ
ヤボンディングと同様の作用効果が得られる。In addition to the illustrated embodiment, the curing furnace 5 may be an atmosphere filled with an inert gas such as an N 2 curing furnace to suppress the formation of nickel hydroxide.
The transfer system to the wire bonding equipment is a reduction furnace type,
Means such as adding a tamping device to the wire bonding device is also effective. In addition, not only wires but also electrodes such as outer leads of a chip are bonded to the electrodes of this type of substrate. However, the substrate of the present invention can be applied to such bonding in the same manner as wire bonding, and is similar to wire bonding. The operation and effect of the invention can be obtained.

【００２３】[0023]

【発明の効果】本発明は、パッド上に中間層としてニッ
ケル層を形成し、このニッケル層上に表層として金層を
形成して成る電極が形成された基板において、電極の表
層部を薄く除去して水酸化ニッケル成分を取除いている
ので、ワイヤなどのボンディングにおいて、薄い金層に
よっても十分なせん断強度を得ることができる。したが
って高価な金の使用量を大巾に削減して基板の製造コス
トを抑えることができる。According to the present invention, a surface layer portion of an electrode is thinly removed on a substrate having an electrode formed by forming a nickel layer as an intermediate layer on a pad and forming a gold layer as a surface layer on the nickel layer. Since the nickel hydroxide component is removed, sufficient shear strength can be obtained even with a thin gold layer in bonding wires and the like. Therefore, the amount of expensive gold used can be greatly reduced, and the manufacturing cost of the substrate can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施の形態に係る電極の濃度分布図
（表層除去前）FIG. 1 is a diagram showing a concentration distribution of an electrode according to an embodiment of the present invention (before surface layer removal).

【図２】本発明の一実施の形態に係る金層のエスカ分布
結果を示すグラフFIG. 2 is a graph showing an esca distribution result of a gold layer according to one embodiment of the present invention.

【図３】本発明の一実施の形態に係るワイヤと金層の接
合部分を拡大した図FIG. 3 is an enlarged view of a bonding portion between a wire and a gold layer according to an embodiment of the present invention.

【図４】（ａ）本発明の一実施の形態に係るせん断強度
を示すグラフ （ｂ）本発明の一実施の形態に係る濃度分布を示すグラ
フ4A is a graph showing a shear strength according to one embodiment of the present invention, and FIG. 4B is a graph showing a concentration distribution according to one embodiment of the present invention.

【図５】本発明の一実施の形態に係るワイヤボンディン
グ前処理方法を示すフローチャートFIG. 5 is a flowchart showing a wire bonding pretreatment method according to one embodiment of the present invention.

【図６】（ａ）本発明の一実施の形態に係るワイヤボン
ディング前処理方法の工程説明図 （ｂ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図 （ｃ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図 （ｄ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図 （ｅ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図 （ｆ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図 （ｇ）本発明の一実施の形態に係るワイヤボンディング
前処理方法の工程説明図FIG. 6A is an explanatory view of a process of a wire bonding pre-processing method according to an embodiment of the present invention. FIG. 6B is an explanatory view of a process of a wire bonding pre-processing method according to an embodiment of the present invention. Process description diagram of a wire bonding pretreatment method according to one embodiment of the present invention (d) Process description diagram of a wire bonding pretreatment method according to one embodiment of the present invention (e) According to one embodiment of the present invention Process description diagram of wire bonding pretreatment method (f) Process description diagram of wire bonding pretreatment method according to one embodiment of the present invention (g) Process description of wire bonding pretreatment method according to one embodiment of the present invention Figure

【図７】従来のワイヤボンディング前処理方法を示すフ
ローチャートFIG. 7 is a flowchart showing a conventional wire bonding pretreatment method.

【図８】（ａ）従来のワイヤボンディング前処理方法の
工程説明図 （ｂ）従来のワイヤボンディング前処理方法の工程説明
図 （ｃ）従来のワイヤボンディング前処理方法の工程説明
図 （ｄ）従来のワイヤボンディング前処理方法の工程説明
図 （ｅ）従来のワイヤボンディング前処理方法の工程説明
図 （ｆ）従来のワイヤボンディング前処理方法の工程説明
図FIG. 8A is a process explanatory view of a conventional wire bonding pre-processing method. FIG. 8B is a process explanatory view of a conventional wire bonding pre-processing method. (E) Process explanatory diagram of a conventional wire bonding pretreatment method (f) Process explanatory diagram of a conventional wire bonding pretreatment method

【図９】（ａ）従来のせん断強度の変化を示すグラフ
（置換型めっき法） （ｂ）従来のせん断強度の変化を示すグラフ（還元型め
っき法） （ｃ）従来のせん断強度の変化を示すグラフ（電解めっ
き法）9A is a graph showing a change in conventional shear strength (substitution plating method). FIG. 9B is a graph showing a change in conventional shear strength (reduction plating method). Shown graph (electrolytic plating method)

【符号の説明】[Explanation of symbols]

１ 基板 ２ 電極 ２ａ 銅層 ２ｂ ニッケル層 ２ｃ 金層 ３ 接着剤 ４ 半導体チップ ５ キュア炉 DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode 2a Copper layer 2b Nickel layer 2c Gold layer 3 Adhesive 4 Semiconductor chip 5 Cure furnace

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】パッド上に中間層としてニッケル層を形成
し、このニッケル層上に表層として金層を形成して成る
電極が形成された基板であって、前記電極の表層部を薄
く除去して水酸化ニッケル成分を取除いたことを特徴と
する基板。1. A substrate having an electrode formed by forming a nickel layer as an intermediate layer on a pad and forming a gold layer as a surface layer on the nickel layer, wherein a surface layer portion of the electrode is thinly removed. A substrate characterized in that a nickel hydroxide component has been removed therefrom.
JP8232729A 1996-09-03 1996-09-03 Board Expired - Lifetime JP2783260B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8232729A JP2783260B2 (en) 1996-09-03 1996-09-03 Board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8232729A JP2783260B2 (en) 1996-09-03 1996-09-03 Board

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5267908A Division JP2783133B2 (en) 1993-09-29 1993-09-29 Wire bonding pretreatment method

Publications (2)

Publication Number Publication Date
JPH09107000A JPH09107000A (en) 1997-04-22
JP2783260B2 true JP2783260B2 (en) 1998-08-06

Family

ID=16943876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8232729A Expired - Lifetime JP2783260B2 (en) 1996-09-03 1996-09-03 Board

Country Status (1)

Country Link
JP (1) JP2783260B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141968A (en) * 2005-11-15 2007-06-07 Sharp Corp Circuit board manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPH09107000A (en) 1997-04-22

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