JP2782929B2 - Inner lead bonding mechanism and method of manufacturing TAB semiconductor device - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a so-called TAB semiconductor device using a carrier film and a bonding mechanism for inner leads used therein.

[Conventional technology]

In general, a semiconductor device attaches a semiconductor element to a die pad provided on a lead frame, connects an external electrode of the semiconductor element to a terminal of the lead frame with a wire, and packages each with a thermosetting resin such as an epoxy resin. The terminal is cut and manufactured.

By the way, recently, with the miniaturization and thinning of electronic devices, semiconductor devices used for them have to be mounted at high density.
There is a demand for a thin and small semiconductor device. In order to respond to such a demand, a semiconductor element is provided in a device hole of a carrier film such as a polyimide film, and an electrode of the semiconductor element is directly connected to an inner lead of the carrier film. A semiconductor device of a type in which a sealing material made of resin is printed or potted and packaged has been used. The operation of the conventional inner lead bonding apparatus using a carrier film will be described. Supply stand 15
The semiconductor element 6 transferred from the semiconductor device 6 and placed on the preheating stage 18 is positioned by the positioning guide 19, and is positioned at a predetermined position on the bonding stage 14 by the transfer mechanism 21. On the other hand, the film 1 conveyed by the sprocket 12 stops at the position where the inner leads 3 have reached the semiconductor elements 6, and aligns the plurality of electrodes 4 provided on the semiconductor elements 6 with the respective inner leads 3.
At this time, the semiconductor element 6 is fully heated by a heater built in the bonding stage 14. In this state, the bonding head 8 is lowered and brought into contact with each inner lead 3. Then, the bonding tool 9 heated by the built-in heater is lowered, and the inner leads 3 and a large number of electrodes 4 of the semiconductor element 6 are heated and pressed to be fused and joined. When the bonding is completed, the pressure of the bonding tool 9 is released and the bonding head 8 is raised. Next, the carrier film 1 is transported by one frame, the next semiconductor element 6 is placed, and bonding is performed in the same manner as described above.

[Problems to be solved by the invention]

In the inner lead bonding apparatus as described above, usually, the semiconductor element 6 is heated on the preheating stage 18, the semiconductor element 6 is heated on the bonding stage 14 by the transfer mechanism 21, and the heating is performed by the bonding tool 9. It is desirable to bond by pressing. However, in the current manufacturing process, since the time from the search for the semiconductor element 6 on the bonding stage 14 to the bonding is very short, the bonding must be performed before the temperature is raised to the required temperature. . Although the bonding tool 9 is heated, since the surface temperature of the semiconductor element 6 is still lowered, it is sometimes difficult to obtain sufficient reliability due to poor connection or insufficient bonding strength. there were.

In order to raise the temperature of the semiconductor element 6 at the time of bonding, the heating time may be increased, but this naturally lowers the productivity.

Further, since the semiconductor element 6 is rapidly heated by the bonding stage 14 and the high-temperature bonding tool 9, cracks may occur in the passivation film.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and to provide an inner lead bonding apparatus capable of heating a semiconductor element to a required temperature in a short time and performing bonding without generating a crack or the like. It is what it was.

[Means for solving the problem]

The bonding mechanism of the inner lead according to the present invention includes:
A supply stage serving as a stage on which a semiconductor element is mounted, a pre-heating stage positioned at a predetermined distance from the supply stage and serving as a stage for heating the semiconductor element, and a predetermined distance from the supply stage and the pre-heating stage A bonding stage that is a stage that is connected to the electrode of the heated semiconductor element and the inner lead of the carrier film by pressing and further heating.
A transfer mechanism for transporting the semiconductor element from the supply stage to the preheating stage and from the preheating stage to the bonding stage, wherein the transport mechanism includes a pickup head that sucks and transports the semiconductor element. Wherein the pickup head is provided with a heating mechanism.

Further, the pickup head has a first pickup head having the heating mechanism and a second pickup head, and the first and second pickup heads are formed integrally.

Still further, the first pickup head is used for conveyance between the preheating stage and the bonding stage, and the second pickup head is used for conveyance between the supply stage and the preheating stage. It is characterized by becoming.

On the other hand, the method for manufacturing a TAB type semiconductor device according to the present invention is a method for manufacturing a TAB type semiconductor device in which electrodes of a semiconductor element and inner leads of a film carrier are connected by heating and pressing, and is mounted on a supply stage. Transporting the placed semiconductor element to a preheating stage at a predetermined distance from the supply stage, heating the transported semiconductor element in the preheating stage, and further heating the heated semiconductor element. Transporting the semiconductor element to the bonding stage at a predetermined distance from the pre-heating stage, and connecting the transported electrode of the semiconductor element and the inner lead of the carrier film by pressing and heating at the bonding stage. , Is characterized by the following.

〔Example〕

FIG. 1 is a perspective view showing a main part of an embodiment of the present invention. In the figure, reference numeral 8 denotes a bonding head which is supported by a machine main body 7 so as to be vertically movable and can be depressed, and includes a bonding tool 9 having a built-in heater. A guide plate 10 has a hole 11 and is fixed to the apparatus main body 7. A guide plate 12 is rotatably mounted on the apparatus main body 7.
Is a guide roller that guides along the guide plate 10.
Reference numeral 13 denotes a bonding table provided on an XY table and provided with a bonding stage 14 having a built-in heater at an upper portion;
Is a supply stage on a XY table, on which a wafer 16 on which a large number of semiconductor elements 6 are formed is placed.
A pre-heating stage provided on a -Y table, on which a pre-heating stage 18 having a built-in heater and a positioning guide 19 are provided. 21 and 22 are rotary shafts 20 that can move up and down
The pre-heating stage 18 and the semiconductor element 6 of the supply stage 15 are sucked and transferred by the first and second pickup heads which are attached to and rotate together.

Reference numeral 21 denotes a first pickup head provided with a head having a built-in heater at a lower portion.

First, the second pickup head 22 is first rotated to a position above the supply stage 15 to adsorb one semiconductor element 6. Next, the first pickup head 21 is rotated over the preheating stage 18 to position the semiconductor element 6 in the positioning guide.
It is placed on the preheating stage 18 along the line 19. At this time, the second pickup head 22 is located on the supply stage 15. The first pickup head 21 adsorbs the semiconductor element 6 on the preheating stage 18 and the second pickup head 22 adsorbs the next semiconductor element 6 on the supply stage 15 and rotates in the direction of arrow a. Then, the first pickup head 21 heats the semiconductor element 6 and places it on the bonding stage 14, and the second pickup head 22 puts the semiconductor element 6 on the preliminary heating stage 18 and then moves in the direction of arrow b again. Rotate and position. A large number of electrodes 4 provided on the semiconductor element 6 on the bonding stage 14,
The bonding tool 9 is lowered and bonding is performed by aligning the inner leads 3 with each other. When bonding is completed, the bonding tool 9 is raised and the carrier film 1 is advanced by one frame. By repeating such operations, the semiconductor element 6 is heated by the pickup head 21 and then heated to a required temperature by the bonding stage 14 to perform bonding in sequence. Since the semiconductor element 6 is fully heated on the preliminary heating stage 18, the pickup head 21, and the bonding stage 14, bonding can be performed in a short time, and it is not necessary to heat the bonding tool 9 to a high temperature.

〔The invention's effect〕

As is apparent from the above description, the present invention provides an inner lead bonding apparatus, in which a heating head is provided in a pickup head between a bonding stage and a preliminary heating stage, and a heated semiconductor element is supplied to the bonding stage. Since bonding is performed, connection failure and insufficient strength do not occur. Also, since the semiconductor element is not rapidly heated, there is no fear that cracks and cracks are generated in the passivation film and the like,
A highly reliable bonding apparatus can be obtained. Further, since the semiconductor element can be pre-heated and heated and can be fully heated in a short time, productivity can be improved.

[Brief description of the drawings]

FIG. 1 is a perspective view of an embodiment of the present invention, and FIG. 2 is an enlarged sectional view of bonding. DESCRIPTION OF SYMBOLS 1 ... Carrier film 2 ... Device hole 3 ... Inner lead 4 ... Semiconductor element electrode 6 ... Semiconductor element 7 ... Bonding device 8 ... Bonding head 9 ... Bonding tool 10 ... Guide plate 11 ... Hole 12 Sprocket 13 XY table bonding table 14 Bonding stage 15 Supply stage 16 Wafer 17 XY table preheating table 18 Preheating stage 19 Positioning guide 20 … Rotating shaft that can move up and down 21… Pick-up head with built-in heater 22… Pick-up head

Claims (4)

(57) [Claims] 1. A supply stage on which a semiconductor element is mounted, a preheating stage located at a predetermined distance from the supply stage and heating the semiconductor element, a supply stage and the preheating. A bonding stage that is a stage that is connected to the heated semiconductor element electrode and the inner lead of the carrier film by pressing and further heating and is located at a predetermined distance from the stage, and from the supply stage to the preheating stage. And a transfer mechanism for transferring the semiconductor element from the preheating stage to the bonding stage. The transfer mechanism has a pickup head for sucking and transferring the semiconductor element, and the pickup head has a heating mechanism Characterized by being provided with an inner lead bondin Mechanism. 2. The pickup head includes a first pickup head having the heating mechanism and a second pickup head, wherein the first and second pickup heads are integrally formed. The bonding mechanism for an inner lead according to claim 1, wherein 3. The first pickup head is used for conveyance between the preheating stage and the bonding stage, and the second pickup head is used for conveyance between the supply stage and the preheating stage. 3. The inner lead bonding mechanism according to claim 2, wherein the bonding mechanism is used. 4. A method of manufacturing a TAB type semiconductor device, comprising connecting an electrode of a semiconductor element and an inner lead of a film carrier by heating and pressurizing, wherein a semiconductor element mounted on a supply stage is moved from the supply stage to a predetermined position. Conveying the semiconductor element to the preheating stage at a distance, heating the conveyed semiconductor element by the preheating stage, and moving the semiconductor element by a predetermined distance from the preheating stage while further heating the heated semiconductor element. Transporting to the bonding stage; and pressing and heating the transported electrode of the semiconductor element and the inner lead of the carrier film at the bonding stage by pressurizing and heating, the TAB comprising: A method for manufacturing a semiconductor device.