JP2781503B2 - Dielectric porcelain composition for low-temperature firing, dielectric resonator or dielectric filter obtained using the same, and methods for producing them - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition for low-temperature firing, and particularly to a low-temperature firing dielectric ceramic composition suitably used for manufacturing a dielectric resonator having an inner layer conductor, such as a stripline type filter having a triplate structure. The present invention relates to a possible high frequency dielectric ceramic composition. Further, the present invention provides a dielectric filter obtained by using such a dielectric ceramic composition or a dielectric filter composed of a plurality of the resonators, and furthermore, a dielectric resonator or a dielectric filter of the dielectric filter. It relates to an advantageous manufacturing method.

[0002]

2. Description of the Related Art Today, coaxial dielectric filters using a high-permittivity porcelain composition are widely used in cellular phones, automobile telephones, and the like.
On the inner peripheral surface and outer peripheral surface of the cylindrical dielectric block, respectively, a plurality of coaxial resonators provided with an inner conductor and an outer conductor are coupled and configured, There is a limit to the miniaturization, and for this reason, a strip line type having a triplate structure in which a conductor is formed inside a dielectric is being studied. In this stripline type filter, conductors are arranged in a predetermined pattern in a plate-shaped dielectric and provided integrally, and a structure in which a plurality of resonators are formed is employed. (Thickness) can be reduced, so that the size can be reduced.

[0003] To manufacture a dielectric filter having an inner layer conductor such as a stripline type filter, simultaneous firing of the inner layer conductor and the dielectric ceramic composition is required. Since the composition has a very high firing temperature, the composition is restricted by conductor materials that can be used as the inner layer conductor, and the composition has a low conduction resistance.
It was difficult to use g-based materials. For example, to use an Ag-Pd-based alloy or an Ag-Pt-based alloy as the inner layer conductor, the firing temperature of the dielectric ceramic composition is 1000 ° C.
In particular, in order to use Ag having a low conduction resistance alone, the firing temperature of the dielectric ceramic composition should be 90
It must be around 0 ° C. Therefore, there is a need for a dielectric ceramic composition that can be sintered at such a low firing temperature and has excellent high-frequency characteristics.

[0004] On the other hand, various types of dielectric ceramic compositions have been conventionally proposed.
Ba-Ti-RE-Bi-based oxide (RE: rare earth metal)
The dielectric ceramic composition composed of
It is also known as a material having a large no-load Q and a small temperature coefficient of the resonance frequency.
No. 107 and Japanese Unexamined Patent Publication No. 1-275466, etc. attempt to improve the relative dielectric constant and the temperature coefficient of the resonance frequency by further introducing SrO into such a composition system. In the dielectric porcelain composition,
In any case, there is a problem that the firing temperature is as high as 1300 ° C. to 1400 ° C. Therefore, attempts have been made to lower the firing temperature by adding a Pb oxide or the like.

For example, in US Pat. No. 3,811,937, a calcined mixture of barium oxide, titanium oxide, and rare earth oxide is added to CdO—PbO—Bi ₂ O _3.
A composition comprising 8 to 30% by weight of a base glass has been disclosed.
The firing is performed at a temperature of about 1C to 1150C. Also, in Japanese Patent Application Laid-Open No. Sho 59-214105, Ba
For an O—TiO ₂ —Nd ₂ O ₃ based composition, PbO,
By mixing the powders of Bi ₂ O ₃ , SiO ₂ and ZnO,
Firing at a temperature between 1050 ° C and 1150 ° C has been shown. Further, Japanese Patent Application Laid-Open No. Sho 60-124306 discloses that BaTiO ₃ —Nd ₂ O ₃ —TiO ₂ —Bi ₂ O
Against ₃ based _{compositions, Pb 3 O 4, B 2} O 3, SiO
₂ , a dielectric porcelain composition comprising a predetermined amount of each of ZnO is disclosed.
It has been revealed that firing can be performed at a firing temperature of Furthermore, Japanese Patent Application Laid-Open No. 2-44609 discloses BaTiO
_{3, Nd 2 O 3, TiO} 2, Bi 2 O 3, and Pb ₃ O
The composition consisting of _{4, 2CaO · 3B 2 O 3} , S
iO _2, and the dielectric ceramic composition obtained by adding ZnO is shown, it is clear that sintered at a firing temperature of from 1,000 to 1,050 ° C..

However, even in these conventional dielectric ceramic compositions which can be fired at a low temperature, the firing temperature is still as high as about 1000 ° C. or higher, and mainly Ag or Ag having a low conduction resistance is mainly used. Cannot be used as the internal conductor. For this reason, the content of Pd having a large conduction resistance is increased, and Ag-P
The fact is that only d-based alloys can be used. In addition, in these conventional dielectric ceramic compositions for low-temperature firing, since a large amount of Pb oxide is added, there is a problem in handling the Pb oxide in view of the toxicity of the Pb oxide. there were. As described above, several prior arts for lowering the firing temperature of the dielectric ceramic composition to about 1000 ° C. are known, but the melting point of Ag: 962 ° C.
Or less, preferably 950 ° C. or less, more preferably 900 ° C.
The technology that enables firing at around ° C has not yet been known.

[0007]

The present invention has been made in view of the above circumstances, and has as its object to have a high relative dielectric constant, a large unloaded Q, and a high resonance frequency. 962 to give a dielectric ceramic with a small temperature coefficient
At a sintering temperature of less than or equal to
Sintering is possible at a sintering temperature of about ℃, and a large amount of Pb
An object of the present invention is to provide a dielectric porcelain composition for low-temperature sintering which does not need to contain an oxide. Another object of the present invention is to provide a dielectric resonator obtained by using such a dielectric porcelain or a dielectric filter composed of a plurality of such resonators, and furthermore, a dielectric resonator comprising such a dielectric resonator. Another object of the present invention is to provide an advantageous method of manufacturing a dielectric filter.

In order to solve such a problem, the present inventors have made various studies and found that BaO-SrO-C
against _{aO-TiO 2 -RE 2 O 3} -Bi 2 O 3 based dielectric ceramic composition, a predetermined _{ZnO-B 2 O 3 -Bi 2} O
_It has been found that by incorporating a small amount of the tertiary glass, it is possible to advantageously lower the firing temperature while maintaining its excellent properties.

[0009]

That is, the present invention has been completed based on such findings, and the features thereof are as follows.
General formula: x [(1-ab) BaO.aSrO.bCa
O] · yTiO ₂ · z _{[(1-c) RE 2 O} 3 · cBi
₂ O ₃ ] (where RE represents a rare earth metal), and x, y, z and a, b, c in the general formula are
The following expressions, respectively: 0.10 ≦ x ≦ 0.20, 0.60 ≦
y ≦ 0.75, 0.10 ≦ z ≦ 0.25, x + y + z =
1,0 ≦ a ≦ 0.40, 0 ≦ b ≦ 0.20, and 0 ≦ c
≦ 0.30, a composition comprising barium oxide, strontium oxide, calcium oxide, titanium oxide, rare earth oxide, and bismuth oxide as a main component, and 100 parts by weight of the main component composition On the other hand, the general formula: k (% by weight) ZnO · m (% by weight) B ₂ O
₃ · n (% by weight) Bi ₂ O ₃ (where 1 ≦ k ≦ 45,5
≦ m ≦ 50, 15 ≦ n ≦ 94, k + m + n = 100) A ZnO—B ₂ O ₃ —Bi ₂ O ₃ system glass having a composition represented by the following formula: 6
2.5c) for low-temperature sintering in a proportion of not more than parts by weight (when c ≦ 0.20) or not more than 5.5 parts by weight (when 0.2 <c ≦ 0.3) The dielectric ceramic composition.

In the present invention, when producing such a dielectric ceramic composition for low-temperature firing, the raw material composition for providing the main component composition is calcined at a temperature of 1050 ° C. or higher, and then calcined. The obtained calcined product is finely pulverized so that the average particle size becomes 0.8 μm or less, and then the ZnO—B ₂ O ₃ —Bi ₂ O ₃ system glass as an auxiliary component is blended, whereby the low-temperature firing is performed. The method of producing the dielectric ceramic composition for use is advantageously employed. By adopting such a production process, the decrease in the firing temperature of the dielectric ceramic composition is remarkably promoted, and An increase in the permittivity and an increase in the no-load Q can be advantageously achieved.

Further, the present invention provides a dielectric resonator having a dielectric pattern and a conductor pattern formed in the dielectric ceramic by co-firing with the dielectric ceramic, or a dielectric filter comprising the resonator. In the above, the dielectric porcelain is composed of a dielectric porcelain composition as described above, that is, a dielectric porcelain obtained by firing the dielectric porcelain composition according to claim 1, while the conductive pattern is A gist of the present invention also relates to a dielectric resonator formed of Ag alone or an alloy material containing Ag as a main component, or a dielectric filter comprising the resonator.

Further, the present invention provides a method of manufacturing a dielectric resonator having a dielectric ceramic and a conductor pattern provided in the dielectric ceramic or a dielectric filter comprising the resonator. 2. The method of claim 1, wherein
A molded body made of the dielectric porcelain composition described in (1) or a calcined product thereof is provided with a conductor layer formed of Ag alone or an alloy material containing Ag as a main component, which gives the conductor pattern, and baked simultaneously. A gist of the invention is also a method of manufacturing a dielectric resonator or a dielectric filter including the resonator.

[0013]

[Specific constitution] By the way, in this dielectric ceramic composition, x [(1-ab) BaO.aSrO.bCa
O] means that part of BaO, one of the main components, is SrO and / or
Or CaO.
If the total content of aO, SrO, and CaO is less than 10 mol% (x <0.10), there is a problem that the relative dielectric constant of the obtained dielectric ceramic becomes low.
If it exceeds mol% (x> 0.20), there arises a problem that the temperature coefficient of the resonance frequency becomes too large.

The partial replacement of BaO is carried out with at least one of SrO and CaO.
Is replaced with SrO, the unloaded Q can be improved and the temperature coefficient of the resonance frequency can be reduced while maintaining a high dielectric constant. However, if the substitution ratio is more than 0.40 (a> 0.40), there arises a problem that both the dielectric constant and the no-load Q deteriorate. When a part of BaO is replaced by CaO, the temperature coefficient of the resonance frequency can be increased while maintaining a high dielectric constant and no-load Q.
When it exceeds 20 (b> 0.20), the problem that the no-load Q is rapidly deteriorated is caused. Therefore, these Sr
By adding O and CaO, control of the temperature coefficient of the resonance frequency is advantageously realized.

When the content of TiO ₂ is less than 60 mol% (y <0.60), sintering becomes difficult and a dense sintered body cannot be obtained. On the other hand, when it exceeds 75 mol% (y> 0.7
5) There is a problem that the temperature coefficient of the resonance frequency becomes too large in the positive direction.

Further, regarding the total amount of RE ₂ O ₃ and Bi ₂ O ₃ , in other words, [(1-c) RE ₂ O ₃ .cBi
The value of the ₂ O _3], when the content of the sum is less than 10 mole% (z <0.10), the temperature coefficient of resonant frequency becomes too positive large, whereas, the 25 mole% If it exceeds (z> 0.25), there arises a problem that the sinterability is poor and the relative dielectric constant is reduced.

In the present invention, RE (rare earth metal) in RE ₂ O ₃ includes Nd, Sm, La, C
e, Pr, etc. Among them, Nd or Nd or Sm and / or La is preferably used in combination with Nd. N
When using Sm and / or La in combination with d, the temperature coefficient can be controlled while maintaining a high dielectric constant and no-load Q. However, when such Sm and / or La are combined, the ratio of Sm or La to the entire RE is 20 mol%.
It is desirable that the temperature be less than or equal to the above value. If the temperature exceeds the value, there arises a problem that the temperature coefficient of the resonance frequency greatly changes negatively or positively. In the case where Ce or Pr is used as RE, it is introduced after being converted into trivalent atoms.

Further, when RE ₂ O ₃ is replaced with Bi ₂ O ₃ , the relative dielectric constant is increased, and the temperature coefficient of the resonance frequency can be reduced. In particular, in order to obtain a sufficient substitution effect by Bi ₂ O ₃ , 5 mol% or more (c ≧
0.05) is desirable. However, Bi ₂ O
When the substitution amount of ₃ reaches more than 15 to 20 mole%, and in the temperature coefficient begins to increase, also as the substitution amount of Bi ₂ O ₃ increases, since the unloaded Q decreases, Bi ₂
The substitution amount of O ₃ is practically 30 mol% or less (c ≦ 0.
30) is appropriate.

The present invention comprises a porcelain composition composed of barium oxide, strontium oxide, calcium oxide, titanium oxide, rare earth oxide and bismuth oxide at the above-mentioned ratios. As described later, a predetermined main component is added to such a main component composition. However, the improvement of no-load Q and the resonance For the purpose of correcting the temperature coefficient of frequency, aluminum oxide, iron oxide, manganese oxide, chromium oxide, zinc oxide,
Addition of a metal oxide such as tin oxide or zirconium oxide may be used at all.

In addition, ZnO-B added as an auxiliary component to the main component porcelain composition according to the present invention.
₂ O ₃ —Bi ₂ O ₃ based glass is composed of _{1 to} 45% by weight of zinc oxide (ZnO) and 5 to 50% by weight of boron oxide (B ₂
O ₃ ) and 15 to 94% by weight of bismuth oxide (Bi ₂ O)
₃ ) It must be composed of That is, assuming that the contents of zinc oxide, boron oxide and bismuth oxide are k wt%, m wt% and n wt%, the following formula:
≦ k ≦ 45, 5 ≦ m ≦ 50, 15 ≦ n ≦ 94, k + m +
It is necessary to satisfy n = 100.

When the content (k) of ZnO is 1% by weight
If it is less than 50%, vitrification becomes difficult. On the other hand, if it exceeds 45% by weight, vitrification becomes difficult, and the firing temperature of the target dielectric ceramic composition becomes high. Is caused. In addition, B ₂ O ₃
If the content (m) is less than 5% by weight, vitrification becomes difficult and the firing temperature of the dielectric ceramic composition increases. On the other hand, if it exceeds 50% by weight, no This causes a problem that the load Q becomes small.
Further, when the content (n) of Bi ₂ O ₃ exceeds 94% by weight, vitrification becomes difficult, and in addition, a problem arises in that the firing temperature of the target dielectric ceramic composition becomes high. Because you do.

Incidentally, such ZnO-B ₂ O ₃ -Bi ₂ O
Preferred composition range of ₃ based glass, the content of ZnO (k) is 2 to 40 wt%, the content of B ₂ O ₃ (m) 10 to 45 wt%, the content of Bi ₂ O ₃ (n ) Is 15 ~
75% by weight. In addition, the glass as such an auxiliary component may be allowed to contain impurities such as various metal oxides, but the content of such impurities is generally limited to a ratio of up to 10% by weight based on the glass. Should. Further, the ZnO-B ₂ O ₃ -Bi used in the present invention
_{As the 2} O ₃ glass, not only the whole is uniformly vitrified, but also if it is substantially in a glassy state,
Even if the material is phase-separated, or if the raw material partially remains or is partially crystallized, the same can be used.

The ZnO--B ₂ O having such a composition
₃ -Bi ₂ O ₃ based glass, as a sub-component, per 100 parts by weight of the above-mentioned main component ceramic composition, 0.1 parts by weight or more, (18-62.5C) parts by weight or less (however, c ≦ 0 .
20) or 5.5 parts by weight or less (however, 0.20 parts by weight)
<C ≦ 0.30), so that the firing temperature of the target dielectric ceramic composition is 96
It can be reduced to 2 ° C. or less, preferably around 900 ° C. On the other hand, when the content of the glass as such a sub-component is less than 0.1 part by weight, a sufficient effect of lowering the firing temperature due to the addition of such a sub-component cannot be obtained. , And when c ≦ 0.20, (18
−62.5c) Exceeding parts by weight or 0.20 <c ≦
In the case of adding more than 5.5 parts by weight at 0.30, there is a problem that the unloaded Q of the obtained dielectric porcelain becomes too small to be practical. As the preferable content of such a _{ZnO-B 2 O 3 -Bi 2} O 3 based glass is about 1 to 5 parts by weight.

Incidentally, the dielectric porcelain composition according to the present invention is different from the above-described main component porcelain composition in the Z
nO-B ₂ O ₃ -Bi ₂ is a O ₃ based glass is manufactured by allowed formulated as an auxiliary component, prior to the formulation of such auxiliary components serving _{ZnO-B 2 O 3 -Bi 2} O 3 based glass The above-mentioned main component porcelain composition is prepared by calcining and pulverizing the raw material composition giving the composition. And, at the time of calcination, 90
When a calcination temperature of 0 ° C. or more is employed, a decrease in the calcination temperature of the dielectric ceramic composition, an increase in the relative dielectric constant, and an increase in the no-load Q accompanying the increase in the calcination temperature are observed. In particular, 105
Since the effect is remarkable at a calcination temperature of 0 ° C. or higher, calcination is preferably performed at a temperature of 1050 ° C. or higher in the present invention. However, if the calcination temperature is 13
If the temperature exceeds 50 ° C., the calcined product is significantly hardened after calcining, which causes a problem in handling. Therefore, a calcining temperature of preferably 1100 ° C. to 1300 ° C. is advantageously employed.

When the calcined material obtained by calcining in this manner is pulverized, the lower the average particle size of the pulverized material, the more the decrease in the firing temperature of the dielectric ceramic composition is promoted, and It is possible to increase the permittivity and the unloaded Q. Therefore, in the present invention, 0.8
The calcined product is pulverized so as to have an average particle size of not more than μm. However, when the average particle size of the calcined and pulverized product is smaller than 0.1 μm, the moldability of the obtained dielectric porcelain composition is reduced, and for example, it is difficult to form a tape by a normal doctor blade method or the like. It is desirable to control the average particle size of the calcined and pulverized product to about 0.1 to 0.8 μm. In addition, the particle diameter of such a fine pulverized product is generally measured by using a laser diffraction scattering method.

[0026]

EXAMPLES Hereinafter, some examples of the present invention will be described to clarify the present invention more specifically. However, the present invention does not impose any restrictions due to the description of such examples. Needless to say, it is not what we receive. In addition, various changes, modifications, improvements, and the like can be made to the present invention based on the knowledge of those skilled in the art without departing from the spirit of the present invention, in addition to the examples described below. Should be understood.

Example 1 High-purity barium carbonate, strontium carbonate, calcium carbonate, titanium oxide, neodymium oxide, samarium oxide,
Using lanthanum oxide and bismuth oxide, their components are:
Various types of x, y, z, RE, and
Each was weighed so as to give a, b, and c values, charged into a polyethylene pot together with zirconia cobblestone, added with pure water, and wet mixed. Then, the obtained mixture was taken out of the pot, dried, put into an alumina crucible, and calcined at a temperature of 1250 ° C. for 4 hours in an air atmosphere. Next, the calcined product is disintegrated, and again put together with zirconia cobblestone in a polyethylene pot, and pulverized until the average particle diameter measured using a laser diffraction scattering method becomes 0.8 μm or less. This was performed to obtain various calcined and pulverized products.

On the other hand, high-purity zinc oxide, boron oxide, and bismuth oxide were weighed so as to give glasses having various compositions shown in Table 2 below, and each composition was placed in a polyethylene pot. Was charged together with alumina cobblestone and dry-mixed. Thereafter, the obtained mixture was melted in a chamotte crucible, quenched in water, and vitrified. The obtained glass was put into an alumina pot together with alumina cobblestone, and pulverized in ethanol until the average particle diameter became about 4 μm.

Next, 100 parts by weight of the various calcined and pulverized materials thus obtained and a predetermined amount of glass having various compositions (the amount shown in Table 1) were put into a polyethylene pot together with alumina boulders. Pure water was added and wet mixed. At that time, 1% by weight of PVA was added as a binder. After the obtained mixture was dried, opening: 355 μm
And granulated.

[0030]

[Table 1]

[0031]

[Table 2]

The various granulated powders thus obtained are molded at a surface pressure of 1 ton / cm ² by using a press molding machine, and disk-shaped test specimens each having a size of 20 mmφ × 15 mm ^t. I got The obtained test pieces were fired in air at a temperature of 900 ° C. for 2 hours to produce various dielectric ceramic samples. Furthermore, polishing the sample obtained by this firing to the size of the disc-shaped diameter of 16 mm × 8 mm ^t, respectively, to measure the dielectric properties. The relative permittivity (εr) and the no-load Q were measured by a parallel conductor plate type dielectric resonator method, and the temperature coefficient (τf) of the resonance frequency was measured in a range of −25 ° C. to + 75 ° C. The measurement frequency was 2 to 4 GHz. Table 3 shows the obtained results.

[0033]

[Table 3]

Embodiment 2 In the embodiment 1, no. The calcined and pulverized product obtained as No. 5 was used, and the Zn type of the glass type: D in Example 1
O—B ₂ O ₃ —Bi ₂ O ₃ -based glass powder (external 2.3 parts by weight), polyvinyl butyral (external 8 parts by weight), a plasticizer and a deflocculant together with zirconia cobblestone were added to an alumina pot. Then, a mixed solution of toluene and isopropyl alcohol was further added, followed by wet mixing.

Next, the mixture was defoamed and formed into a green tape having a thickness of 250 μm by a doctor blade method. Then, a conductive pattern of a 900 MHz band two-stage bandpass filter was printed on the obtained green tape using a printing Ag paste. Next, 20 green tapes were heated at a temperature of 100 so as to sandwich the green tape on which the conductor pattern was printed.
The layers were laminated under the conditions of a temperature of 100 ° C. and a pressure of 100 kgf / cm ² . Then, after cutting the laminate, 900 ° C. in air.
By sintering at a temperature of 2 hours, a stripline type filter having a structure as shown in FIG. 1 was produced. In the stripline filter shown in FIG. 1, the dielectric substrate 16 has a three-layer structure, and is integrated by simultaneous firing with a conductor. A plurality of resonance electrodes 12, 12 are built in one layer of the dielectric substrate 16, and a pair of coupling electrodes 20, 20 are built in a different layer. On the other hand, a ground electrode 14 is provided on substantially the entire surface of the dielectric substrate 16, and a pair of input / output terminals 18 and
18 are provided. Then, the coupling electrode 20,
20 is extended, and the end of the extended portion 20 a is extended to the outer surface of the dielectric substrate 16.
The input / output terminal 18 on the outer surface is connected to the internal coupling electrode 20.

The stripline filter thus obtained was measured for its filter characteristics using a network analyzer. As a result, the center frequency was 915 MHz.
z, insertion loss: 1.6 dB.

[0037]

As is apparent from the above description, the dielectric porcelain composition according to the present invention comprises barium oxide (BaO),
Strontium oxide (SrO), calcium oxide (Ca
O), titanium oxide (TiO ₂ ), rare earth oxide (RE
₂ O ₃ ) and bismuth oxide (Bi ₂ O ₃ ) as main components, each of which is contained in a specific amount, and having a specific composition of Zn as an auxiliary component.
Since a predetermined amount of OB ₂ O ₃ —Bi ₂ O ₃ glass is contained, sintering is performed at a firing temperature of 962 ° C. (the melting point of Ag) or lower, preferably at a firing temperature of about 900 ° C. This makes it possible to advantageously produce a dielectric filter such as a stripline type filter having Ag alone or an alloy material mainly composed of Ag having a low conduction resistance as an inner layer conductor. In addition, the obtained dielectric porcelain has the features that it has a high relative dielectric constant, a large unloaded Q, and a small temperature coefficient of the resonance frequency.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a form of a laminated structure of a dielectric filter manufactured in Example 2.

[Explanation of symbols]

 12 Resonance electrode 14 Earth electrode 16 Dielectric substrate 18 Input / output terminal 20 The coupling electrode

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) C04B 35/46 H01B 3/12

Claims (3)

(57) [Claims] 1. The general formula: x [(1-ab) BaO · a
SrO · bCaO] · yTiO ₂ · z [(1-c) RE
_[ 2O ₃ .cBi ₂ O ₃ ] (wherein RE represents a rare earth metal), and x, y, z and a, b, c in the general formula are each represented by the following formula: 10 ≦ x ≦ 0.2
0, 0.60 ≦ y ≦ 0.75, 0.10 ≦ z ≦ 0.2
5, x + y + z = 1, 0 ≦ a ≦ 0.40, 0 ≦ b ≦ 0.
20, and a composition composed of barium oxide, strontium oxide, calcium oxide, titanium oxide, rare earth oxide, and bismuth oxide, which is configured to satisfy 20 and 0 ≦ c ≦ 0.30. With respect to 100 parts by weight of the product, the general formula: k (6% by weight) ZnO · m (% by weight) B ₂ O ₃ .n (% by weight) Bi ₂ O ₃ (where 1 ≦ k
≦ 45, 5 ≦ m ≦ 50, 15 ≦ n ≦ 94, k + m + n =
100) ZnO—B ₂ O ₃ —Bi having a composition represented by
₂ O ₃ -based glass, as an auxiliary component, 0.1 parts by weight or more,
(18-62.5c) parts by weight or less (however, c ≦ 0.20
Or 5.5 parts by weight or less (provided that 0.2 <c ≦
(When 0.3). A dielectric ceramic composition for low-temperature firing. 2. A dielectric resonator having a dielectric porcelain and a conductor pattern formed in said dielectric porcelain by co-firing with said dielectric porcelain, or a dielectric filter comprising said resonator. 2. The body porcelain according to claim 1,
Wherein the conductor pattern is made of Ag alone or an alloy material containing Ag as a main component, while being constituted by a dielectric porcelain obtained by firing the dielectric porcelain composition described in 1). A resonator or a dielectric filter including the resonator. 3. When manufacturing a dielectric resonator having a dielectric porcelain and a conductor pattern provided in the dielectric porcelain or a dielectric filter including the resonator, the dielectric porcelain is provided. A formed body made of the dielectric ceramic composition according to claim 1 or a calcined product thereof is provided with a conductor layer formed of Ag alone or an alloy material containing Ag as a main component, which gives the conductor pattern. A method for producing a dielectric resonator or a dielectric filter comprising the resonator, wherein the dielectric resonator is co-fired.