JP2776877B2 - Substrate holder - Google Patents

Substrate holder

Info

Publication number
JP2776877B2
JP2776877B2 JP1063700A JP6370089A JP2776877B2 JP 2776877 B2 JP2776877 B2 JP 2776877B2 JP 1063700 A JP1063700 A JP 1063700A JP 6370089 A JP6370089 A JP 6370089A JP 2776877 B2 JP2776877 B2 JP 2776877B2
Authority
JP
Japan
Prior art keywords
substrate
heater
thermocouple
insulator
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1063700A
Other languages
Japanese (ja)
Other versions
JPH02243590A (en
Inventor
謙雄 金井
直行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1063700A priority Critical patent/JP2776877B2/en
Publication of JPH02243590A publication Critical patent/JPH02243590A/en
Application granted granted Critical
Publication of JP2776877B2 publication Critical patent/JP2776877B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、分子線エピタキシ装置あるいはこれに類す
る超高真空中で使用する基板ホルダに係り、特に導電物
質が付着する場合に好適な基板ホルダに関するものであ
る。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a molecular beam epitaxy apparatus or a similar type of substrate holder used in an ultra-high vacuum, and more particularly to a substrate holder suitable for a case where a conductive substance is adhered. It is about.

〔従来の技術〕[Conventional technology]

基板ホルダには、基板ヒータ用のリード線,熱電対,
ビームモニタ用リード線などが設けられるが、従来、公
転運動に対してはリード線をフィッシュボーン形のガイ
シで覆って可撓性を付加していた。
The substrate holder contains lead wires for the substrate heater, thermocouples,
A beam monitoring lead wire or the like is provided. Conventionally, however, the lead wire has been covered with a fishbone-shaped insulator to add resilience to revolving motion.

なお、この種の基板ホルダは、例えば、高橋著、“分
子線エピタキシー技術”、工業調査会編等において記載
されている。
This type of substrate holder is described in, for example, Takahashi, "Molecular Beam Epitaxy Technology", edited by the Industrial Research Council, and the like.

〔発明が解決しようとする課題〕 上記従来技術は、基板ホルダに内蔵されているヒー
タ,熱電対のリード線を被覆する絶縁ガイシへの分子線
源から蒸発する原料(例えば、Ga,Asなど)の付着に対
して十分に防護されているとは言い難く、時折、付着物
が絶縁ガイシ内に廻り込み、電気的な短絡を招くという
問題があった。
[Problems to be Solved by the Invention] The above-mentioned prior art discloses a material (for example, Ga, As, etc.) that evaporates from a molecular beam source to an insulating insulator covering a heater and a thermocouple lead wire built in a substrate holder. It is difficult to say that the protection is sufficiently protected against the adhesion, and there has been a problem that the adhesion sometimes goes into the insulating insulator and causes an electric short circuit.

本発明の目的は、蒸発物が飛翔する空間には一切リー
ド線を曝さず、長期間の使用に対して、短絡が発生しな
い信頼度の高い基板ホルダを提供することにある。
An object of the present invention is to provide a highly reliable substrate holder that does not expose a lead wire to a space where an evaporant flies, and does not cause a short circuit for long-term use.

〔課題を解決するための手段〕[Means for solving the problem]

上記目的は、支持する軸を中空にして、絶縁ガイシに
より被覆されたリード線を中空軸の内部を通して配線す
ることにより、達成される。
The above object is achieved by making a supporting shaft hollow, and wiring a lead wire covered with an insulating insulator through the inside of the hollow shaft.

〔作用〕[Action]

MBE装置において、基板ホルダは、基板を支承して、
蒸発物の中に曝すことによって結晶成長をさせるもの
で、蒸発物が基板ホルダに付着することに不可避であ
る。傘歯車を含む機構部分がカバーで覆われて、この中
に蒸発物が付着しないように配慮されていることは、本
発明と従来技術は同じである。
In the MBE device, the substrate holder supports the substrate,
Exposure in the evaporant causes crystal growth, and it is inevitable that the evaporate adheres to the substrate holder. The present invention and the prior art are the same in that the mechanism including the bevel gear is covered with a cover so that no evaporant is attached to the cover.

本発明では、このカバーから外に各種のリード線を出
すことなく、中空の公転軸の中にそのままリード線を入
れて、公転軸をカバーとして使用し、更に、公転軸を支
承するボス9の支承板9aを経て、リード線を空間に出し
ているので、支承板9aがカバーの役割を果し、リード線
に対して、蒸発物が付着することがない。
According to the present invention, the lead wire is directly inserted into the hollow revolving shaft without putting out various lead wires out of the cover, the revolving shaft is used as a cover, and the boss 9 for supporting the revolving shaft is further provided. Since the lead wire is exposed to the space via the support plate 9a, the support plate 9a functions as a cover, and no evaporated matter adheres to the lead wire.

〔実 施 例〕〔Example〕

以下、本発明の一実施例を図により説明する。第1図
は、本発明の実施例の一つで、1は真空容器の一部を形
成し動力伝達機構を収納する部屋で、フランジ1aによっ
て、分子線エピタキシ装置の成長室に固着される。蓋2
は部屋1内での作業を容易にするために設ける。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of the present invention, in which 1 is a room forming a part of a vacuum vessel and accommodating a power transmission mechanism, which is fixed to a growth chamber of a molecular beam epitaxy apparatus by a flange 1a. Lid 2
Is provided to facilitate the work in the room 1.

蓋2の一部にポート3を設け、回転導入機4を取付け
る。回転導入機4の真空側軸5は、延長軸6と軸方向に
伸縮自在に係合し、延長軸6は、それぞれの端部に近い
部分でベアリング7a,7bで回転自在に支承される。
The port 3 is provided in a part of the lid 2 and the rotation introducing machine 4 is mounted. The vacuum side shaft 5 of the rotation introducing machine 4 is axially and elastically engaged with the extension shaft 6, and the extension shaft 6 is rotatably supported by bearings 7a and 7b at portions near respective ends.

延長軸6の他端には小傘歯車8を固着する。一方部屋
1に固着されたボス9に設備された軸受10a,10bに中空
軸11を回転自在に支承し中空軸11の一方の端に、一体に
形成もしくはボルトなどの手段で固着した中空軸12を設
け、軸受13a,13bを介して、前記小傘歯車8と噛合う大
傘歯車14を回転自在に支承する。中空軸11の他の一方の
端部にはピニオンギヤ15が固着され、これと噛合うラッ
ク16が軸受18にガイドされて、ラックの一端はピン19に
よって、軸20に結合されて、ポート21にベローズ22を介
して真空室外に連結される。
A small bevel gear 8 is fixed to the other end of the extension shaft 6. On the other hand, a hollow shaft 11 is rotatably supported on bearings 10a, 10b provided on a boss 9 fixed to the room 1, and a hollow shaft 12 integrally formed or fixed to one end of the hollow shaft 11 by means such as bolts. And a large bevel gear 14 meshing with the small bevel gear 8 is rotatably supported via the bearings 13a and 13b. A pinion gear 15 is fixed to the other end of the hollow shaft 11, and a rack 16 meshing with the pinion gear 15 is guided by a bearing 18, and one end of the rack is connected to a shaft 20 by a pin 19, and is connected to a port 21. The bellows 22 is connected outside the vacuum chamber.

軸20はベローズ22と溶接などの方法によって固着され
ており、一方の端は、エアシリンダ(図示せず)などに
連結されている。
The shaft 20 is fixed to the bellows 22 by welding or the like, and one end is connected to an air cylinder (not shown) or the like.

要素部品が組込まれた部分24には前記の、小傘歯車,
大傘歯車,軸受などと共に、基板を加熱するためのヒー
タ25,ヒータ25を支持する絶縁部材26,ヒータ25の熱を遮
蔽するための熱シールド板27が絶縁体の支柱28に支持さ
れ、絶縁体の支柱28は、アライナ29,30によって中空軸1
2に枢着されている。また、サセプタ31を把持する爪32
が配設されその外側はカバー33,34で蔽われている。
In the part 24 in which the element parts are incorporated, the aforementioned small bevel gear,
Along with the bevel gears and bearings, a heater 25 for heating the substrate, an insulating member 26 for supporting the heater 25, and a heat shield plate 27 for shielding the heat of the heater 25 are supported by the supporting columns 28 of the insulator. The body strut 28 has a hollow shaft 1
It is pivoted to two. Also, a claw 32 for gripping the susceptor 31
And the outside is covered with covers 33 and 34.

第2図は、第1図のうち基板を加熱するヒータのリー
ド線を接続方法の詳細を示すもので、ヒータ25を支持す
る絶縁部材26は、絶縁体の支柱28に、キャップ37により
ネジなどの方法で固着して支承し電気動力線36は、ヒー
タ25を支持する絶縁部材26のヒータ25の取付面と反対側
で接続し、絶縁体の支柱28の中央部に明けた穴39の中に
組込む。
FIG. 2 shows details of a method of connecting a lead wire of a heater for heating a substrate in FIG. 1. An insulating member 26 for supporting a heater 25 is provided on a post 28 of an insulator and a screw 37 with a cap 37. The electric power line 36 is connected to the insulating member 26 supporting the heater 25 on the side opposite to the mounting surface of the heater 25, and is inserted into a hole 39 formed in the center of the insulating support 28. Incorporate in

第3図は、第2図の断面A−Aを示すもので、穴39
は、楕円穴又は長円穴として、その中に、基板の温度計
測のための熱電対を挿入するための別の絶縁体38を組込
み、絶縁体38によって、電気動力線36aおよび36bの絶縁
を図る如くしている。また、絶縁体38内の小穴40には熱
電対を組込む。
FIG. 3 shows a cross section AA of FIG.
Incorporates another insulator 38 into which a thermocouple for measuring the temperature of the substrate is inserted as an elliptical hole or an oval hole, and the insulator 38 insulates the electric power lines 36a and 36b. I try to do it. A thermocouple is incorporated in the small hole 40 in the insulator 38.

第4図は、基板の温度を計側するための熱電対50の取
付けに係り、キャップ37の先端には絶縁体38の外径より
小さい小穴があけてあり、キャップ37を絶縁体38で保持
すると共に、小穴の部分に熱電対50の感熱部を収納する
ことによって、熱電対50にヒータ25の温度が直接検出さ
れないと共に、サセプタ31の受渡しの際サセプタ31と熱
電対50が接触することを防止する。
FIG. 4 relates to the mounting of a thermocouple 50 for measuring the temperature of the substrate. A small hole smaller than the outer diameter of the insulator 38 is formed at the tip of the cap 37, and the cap 37 is held by the insulator 38. By accommodating the thermosensitive part of the thermocouple 50 in the small hole, the temperature of the heater 25 is not directly detected by the thermocouple 50, and the susceptor 31 contacts the thermocouple 50 when the susceptor 31 is delivered. To prevent.

次にヒータ25の電気動力線36および熱電対50の配線方
法について説明する。
Next, a method of wiring the electric power line 36 and the thermocouple 50 of the heater 25 will be described.

第2図〜第4図で説明した如くして絶縁体の支柱28を
貫通したヒータ25の電気動力線36および熱電対50は、中
空軸11に一体もしくはボルトなどの手段で固着した座に
穴あきの絶縁体51を組込み、中空軸11の内側に中空の碍
管52を貫通して通し、絶縁体51と碍管52の穴に通して部
屋1の中へ取出し、絶縁管53を組込み部屋1に設けたポ
ート52に取付けた電流導入端子55に接続するようにし
た。
As described with reference to FIGS. 2 to 4, the electric power line 36 and the thermocouple 50 of the heater 25 penetrating the support 28 of the insulator are provided with holes in the seat fixed to the hollow shaft 11 or fixed by means such as bolts. A hollow insulator 51 is incorporated, a hollow insulator 52 is penetrated inside the hollow shaft 11, the insulator 51 and a hole of the insulator 52 are taken out into the room 1, and the insulator 53 is installed in the room 1. Connected to the current introduction terminal 55 attached to the port 52.

本発明は上記の如く構成したので、結晶成長中の蒸発
物が各種リード線に到達するケースがなく、リード線に
は全く蒸発物が付着しない。
Since the present invention is configured as described above, there is no case where evaporates during crystal growth reach various leads, and no evaporates adhere to the leads.

〔発明の効果〕〔The invention's effect〕

本発明によれば、リード線への蒸発物付着により短絡
事故が発生しないので、真空ブレークする頻度が著しく
減少し、長期間にわたって、安定して装置が運転できる
効果がある。
ADVANTAGE OF THE INVENTION According to this invention, since the short circuit accident does not generate | occur | produce by evaporation substance adhering to a lead wire, the frequency of a vacuum break is significantly reduced, and there exists an effect that a device can be operated stably over a long period of time.

【図面の簡単な説明】[Brief description of the drawings]

第1図は、本発明の一実施例の基板ホルダの断面図、第
2図は、第1図のヒータ接続部詳細断面図、第3図は、
第2図のA−A断面図、第4図は、第3図の熱電対取付
部の詳細断面図である。 1……真空容器、9……ボス、9a……ボスの支承板、11
……中空軸、25……ヒータ、33,34……カバー、50……
熱電対、51……絶縁体、52……碍管
FIG. 1 is a cross-sectional view of a substrate holder according to an embodiment of the present invention, FIG. 2 is a detailed cross-sectional view of a heater connecting portion of FIG. 1, and FIG.
FIG. 4 is a detailed cross-sectional view of the thermocouple mounting portion of FIG. 3, and FIG. 1 ... vacuum vessel, 9 ... boss, 9a ... boss support plate, 11
…… Hollow shaft, 25… Heater, 33,34 …… Cover, 50 ……
Thermocouple, 51 ... insulator, 52 ... insulator tube

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) C30B 23/00 - 25/22 H01L 21/203 - 21/205 H01L 21/31 C23C 14/00 - 16/56──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int. Cl. 6 , DB name) C30B 23/00-25/22 H01L 21/203-21/205 H01L 21/31 C23C 14/00-16 / 56

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】分子線エピタキシ装置の結晶成長室に配設
され、前記結晶成長室の一部に気密に取り付けられた動
力伝達部と、前記動力伝達部から前記結晶成長室内に動
力を伝達する伝達手段と、前記伝達手段に接続された基
板の自公転部と、前記自公転部に設けられた基板保持用
のサセプタを把持する基板つかみ手段,基板加熱用ヒー
タおよび温度計測用熱電対とから成る基板ホルダにおい
て、 前記基板の自公転部に、該自公転部と前記基板つかみ手
段と前記ヒータ並びに熱電対のリード線とを覆い結晶成
長処理時の蒸発物の付着を防止するカバーを設け、 前記伝達手段の公転軸を中空軸で構成し、前記中空軸内
に前記ヒータ並びに熱電対のリード線を通したことを特
徴とする基板ホルダ。
1. A power transmission unit disposed in a crystal growth chamber of a molecular beam epitaxy apparatus and hermetically attached to a part of the crystal growth chamber, and transmitting power from the power transmission unit to the crystal growth chamber. A transmitting means, a revolving portion of the substrate connected to the transmitting portion, a substrate gripping means for holding a susceptor for holding the substrate provided in the revolving portion, a heater for heating the substrate, and a thermocouple for measuring the temperature. In the substrate holder comprising: a revolving portion of the substrate, a cover that covers the revolving portion, the substrate gripping means, the heater and the lead wire of the thermocouple, and prevents adhesion of evaporated substances during crystal growth processing, A substrate holder, wherein a revolving shaft of the transmission means is formed by a hollow shaft, and leads of the heater and the thermocouple are passed through the hollow shaft.
JP1063700A 1989-03-17 1989-03-17 Substrate holder Expired - Lifetime JP2776877B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1063700A JP2776877B2 (en) 1989-03-17 1989-03-17 Substrate holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1063700A JP2776877B2 (en) 1989-03-17 1989-03-17 Substrate holder

Publications (2)

Publication Number Publication Date
JPH02243590A JPH02243590A (en) 1990-09-27
JP2776877B2 true JP2776877B2 (en) 1998-07-16

Family

ID=13236916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1063700A Expired - Lifetime JP2776877B2 (en) 1989-03-17 1989-03-17 Substrate holder

Country Status (1)

Country Link
JP (1) JP2776877B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197720A (en) * 1982-05-13 1983-11-17 Mitsubishi Electric Corp Cell for molecular beam epitaxial growth

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高橋清編著,「分子線エピタキシー技術」,初版,株式会社工業調査会,1984年1月20日,P.72−73

Also Published As

Publication number Publication date
JPH02243590A (en) 1990-09-27

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