JP2771194B2 - Plasma dispersion plate - Google Patents
Plasma dispersion plateInfo
- Publication number
- JP2771194B2 JP2771194B2 JP63270337A JP27033788A JP2771194B2 JP 2771194 B2 JP2771194 B2 JP 2771194B2 JP 63270337 A JP63270337 A JP 63270337A JP 27033788 A JP27033788 A JP 27033788A JP 2771194 B2 JP2771194 B2 JP 2771194B2
- Authority
- JP
- Japan
- Prior art keywords
- dispersion plate
- electrode
- substrate
- carbon
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明はシリコンウエハのプラズマエッチングに使
用される分散板に関する。Description: TECHNICAL FIELD The present invention relates to a dispersion plate used for plasma etching of a silicon wafer.
一般に、シリコンウエハのプラズマエッチングを行う
場合には、反応容器内に設けた電極上にシリコンウエハ
を載置すると共に、そのウエハの上方には、電極を備え
た分散板を配置し、反応容器中にエッチング用ガスを供
給しながら、前記両電極に高周波電圧を印加することに
より、プラズマを分散板によって反応容器内に分散させ
ながらシリコンウエハの表面に均一に供給するようにし
ている。そして、従来の分散板としては、多孔質の炭素
珪素焼結体の表面にアルミニュウムを蒸着して電極を形
成したものが知られている。In general, when performing plasma etching of a silicon wafer, a silicon wafer is placed on an electrode provided in a reaction vessel, and a dispersion plate provided with an electrode is arranged above the wafer, and the silicon wafer is placed in the reaction vessel. By applying a high-frequency voltage to the two electrodes while supplying an etching gas to the substrate, the plasma is uniformly supplied to the surface of the silicon wafer while being dispersed in the reaction vessel by the dispersion plate. As a conventional dispersion plate, a dispersion plate in which an electrode is formed by depositing aluminum on the surface of a porous carbon silicon sintered body is known.
ところが、上記の分散板は多孔質であるため、アルミ
ニュウムがその蒸着時に焼結体の連続気孔内へ拡散し
て、エッチング中に外部へ飛散するおそれがあり、この
場合には電極成分によってシリコンウエハが汚染される
という問題があった。However, since the above-mentioned dispersion plate is porous, aluminum may diffuse into the continuous pores of the sintered body at the time of vapor deposition and may scatter outside during etching. There was a problem that was contaminated.
又、上記分散板を長期間使用していると、分散板の下
面、すなわち、被プラズマ処理物と面している側が局部
的に浸食されて窪みが生じ、この窪みが所定の値に達す
ると機能低下を招く。分散板は高価であるため、加工を
行ない再利用することが有益であるが、アルミニウム等
の金属層が分散板に形成されている場合、その再生をす
るのに金属層が残留し、高純度の分散板が得られにくい
という問題があった。Further, when the dispersion plate is used for a long time, the lower surface of the dispersion plate, that is, the side facing the object to be plasma-processed is locally eroded to form a depression, and when the depression reaches a predetermined value. This leads to reduced functionality. Since the dispersion plate is expensive, it is useful to process and reuse the dispersion plate.However, when a metal layer such as aluminum is formed on the dispersion plate, the metal layer remains to regenerate the dispersion plate, resulting in high purity. However, there is a problem that it is difficult to obtain a dispersion plate.
この発明は上記の課題を解決するためになされたもの
であって、その目的は仮に電極成分がエッチング中に飛
散した場合でも、シリコンウエハを汚染するおそれがな
く、しかも安定した導電性能を確保することが可能なプ
ラズマ分散板を提供することにある。The present invention has been made to solve the above-mentioned problem, and has as its object that even if electrode components are scattered during etching, there is no possibility of contaminating a silicon wafer, and a stable conductive performance is ensured. It is an object of the present invention to provide a plasma dispersion plate capable of performing the above.
又、分散板を再利用する場合に、効率的に、完全に高
純度のものを得ることが可能なプラズマ分散板を提供す
ることにある。Another object of the present invention is to provide a plasma dispersion plate capable of efficiently and completely obtaining high purity when the dispersion plate is reused.
上記の目的を達成するために、この発明では炭化珪素
焼結体からなるプラズマ分散板において、前記焼結体の
表面にカーボン製の電極を形成している。In order to achieve the above object, in the present invention, in a plasma dispersion plate made of a silicon carbide sintered body, a carbon electrode is formed on the surface of the sintered body.
分散板が使用される時、仮に電極成分が飛散した場合
でも、電極成分はカーボンであるため、シリコンウエハ
を汚染することがない。When the dispersion plate is used, even if the electrode components are scattered, the silicon components are not contaminated because the electrode components are carbon.
以下、この発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
先ず、プラズマエッチング装置について説明すると、
第１図に示すように、反応容器１の下方には電極２が配
置され、その上面にはシリコンウエハ３が載置されてい
る。電極２に対向するように、反応容器１の内部上方に
は、分散板４が配置され、その分散板４には電極５が設
けられている。First, the plasma etching apparatus will be described.
As shown in FIG. 1, an electrode 2 is arranged below a reaction vessel 1, and a silicon wafer 3 is placed on an upper surface thereof. A dispersion plate 4 is disposed above the inside of the reaction vessel 1 so as to face the electrode 2, and the dispersion plate 4 is provided with an electrode 5.
そして、両電極2,5間に高周波電圧を印加した状態
で、反応容器１内に供給口６から四塩化シリコン等のガ
スを送り込んで、プラズマを生成すれば、そのプラズマ
が分散板４によって容器１内に分散されて、シリコンウ
エハ３の表面に均一に供給される。Then, a gas such as silicon tetrachloride is fed from the supply port 6 into the reaction vessel 1 while a high-frequency voltage is applied between the two electrodes 2 and 5 to generate plasma. 1 and uniformly supplied to the surface of the silicon wafer 3.
さて、第２図に示すように、前記分散板４の基板７
は、例えば直径200mm、厚さ20mmの大きさを有する多孔
質の炭化珪素焼結体によって形成されている。電極５は
カーボンによって形成され、そのカーボンは純度が99.9
99％以上で、金属不純物の含有量が10ppm以下であるこ
とが望ましい。又、電極５の厚さは導電性能を確保する
ために、１μｍ以上であることが望ましい。従って、上
記の分散板４を使用すれば、前記エッチング処理中に分
散板４から電極成分が飛散しても、電極成分がカーボン
であるため、ウエハを汚染するおそれはない。Now, as shown in FIG.
Is formed of, for example, a porous silicon carbide sintered body having a diameter of 200 mm and a thickness of 20 mm. The electrode 5 is formed of carbon, and the carbon has a purity of 99.9.
It is desirable that the content of metal impurities is 99% or more and the content of metal impurities is 10 ppm or less. Further, the thickness of the electrode 5 is desirably 1 μm or more in order to secure the conductive performance. Therefore, if the above-mentioned dispersion plate 4 is used, even if the electrode component scatters from the dispersion plate 4 during the etching process, there is no possibility that the wafer is contaminated because the electrode component is carbon.
一方、電極５を基板７に形成する場合には、基板７を
カーボン蒸着装置に挿入して、その装置内を所定の真空
度に到達させる。次に、カーボン蒸着装置の作動条件を
適宜に設定し、その条件に従って作動させることによ
り、基板７には所定厚さのカーボン層が蒸着形成され
る。On the other hand, when the electrodes 5 are formed on the substrate 7, the substrate 7 is inserted into a carbon vapor deposition apparatus, and the inside of the apparatus reaches a predetermined degree of vacuum. Next, operating conditions of the carbon vapor deposition apparatus are appropriately set, and the carbon vapor deposition apparatus is operated according to the conditions, whereby a carbon layer having a predetermined thickness is vapor-deposited on the substrate 7.
又、基板７に、有機物を含む液体をスプレー塗布して
薄膜を形成した後、その基板７を真空中で加熱すること
により、薄膜状のカーボン製電極５を形成しても良い。
更に、化学反応法（CVD）や、カーボンペーストの塗布
によって電極５を形成しても良い。Alternatively, a thin film-shaped carbon electrode 5 may be formed by forming a thin film by spray-coating a liquid containing an organic substance on the substrate 7 and then heating the substrate 7 in a vacuum.
Further, the electrode 5 may be formed by a chemical reaction method (CVD) or by applying a carbon paste.
次に、この実施例における分散板４の再生処理につい
て説明する。プラズマエッチングが長期にわたって行わ
れると、分散板４の下面がプラズマにより浸食されて、
窪みが生じる。この窪みの深さが所定値に達すると、分
散板４の機能低下を招くため、分散板４が装置から取り
外されて再生処理が施される。Next, a process of regenerating the dispersion plate 4 in this embodiment will be described. When the plasma etching is performed for a long time, the lower surface of the dispersion plate 4 is eroded by the plasma,
A depression occurs. When the depth of the depression reaches a predetermined value, the function of the dispersion plate 4 is deteriorated. Therefore, the dispersion plate 4 is removed from the apparatus and a regeneration process is performed.
そこで、先ず再生のための第１工程で、窪みの周囲が
研削除去されて、基板７の厚みが一定にされる。第２工
程では、酸化雰囲気下で分散板４の熱処理が行われる。
この時、電極５が酸化されて確実に除去される。又、研
削工程中に基板７に付着した研削液等の有機物が酸化さ
れて除去される。Therefore, first, in a first step for reproduction, the periphery of the depression is ground and removed, and the thickness of the substrate 7 is made constant. In the second step, the heat treatment of the dispersion plate 4 is performed in an oxidizing atmosphere.
At this time, the electrode 5 is oxidized and reliably removed. In addition, organic substances such as a grinding liquid adhered to the substrate 7 during the grinding process are oxidized and removed.
第３工程では、次の第４工程で洗浄液として使用され
るトリクレンと基板７との親和性を高めるために、超音
波を印加しながらアセトンによって基板７が洗浄され
る。第４工程では、基板７に残存する油脂類を除去する
ために、基板７に超音波を印加しながらトリクレンによ
る洗浄が行われる。第５工程では、トリクレンを除去す
るために、基板７に超音波を印加しながらアセトンによ
る洗浄が行われる。第６工程では、アセトンを除去する
ために、基板７に超音波を印加しながら水洗される。必
要に応じ、第７工程では、超音波印加状態で、弗硝酸に
よる洗浄が行われる。In the third step, the substrate 7 is washed with acetone while applying ultrasonic waves in order to increase the affinity between the trichlene used as the cleaning liquid in the next fourth step and the substrate 7. In the fourth step, in order to remove oils and fats remaining on the substrate 7, the substrate 7 is washed with tricrene while applying ultrasonic waves. In the fifth step, cleaning with acetone is performed while applying ultrasonic waves to the substrate 7 in order to remove tricrene. In the sixth step, the substrate 7 is washed with water while applying ultrasonic waves to remove acetone. If necessary, in the seventh step, cleaning with hydrofluoric acid is performed in a state where ultrasonic waves are applied.
第８工程では、超音波印加状態で、基板７が水洗され
て、前記弗硝酸が除去される。そして、最後の第９工程
において、基板７が乾燥される。その結果、電極５の成
分や研削液等の不純物を含まない、基板７が再生され、
これにカーボン製電極５を新たに形成すれば、分散板４
の再生が完了する。In the eighth step, the substrate 7 is washed with water in a state where ultrasonic waves are applied, and the hydrofluoric acid is removed. Then, in the last ninth step, the substrate 7 is dried. As a result, the substrate 7 containing no components such as the components of the electrode 5 and the grinding fluid is regenerated,
If a carbon electrode 5 is newly formed on this, the dispersion plate 4
Playback is completed.
上記のように、この発明では、プラズマエッチングに
用いる分散板４の基板７を炭化珪素焼結体によって形成
し、電極５をカーボンによって形成したので、仮に電極
成分がエッチング中に飛散した場合でも、シリコンウエ
ハを汚染するおそれがなく、しかも安定した導電性能を
確保することができる。又、酸化処理によって電極５を
容易に除去することができ、よって分散板の再利用を容
易に行ってプラズマエッチング装置のランニングコスト
を低減することができる。As described above, in the present invention, the substrate 7 of the dispersion plate 4 used for plasma etching is formed of a silicon carbide sintered body, and the electrode 5 is formed of carbon. Therefore, even if electrode components are scattered during etching, There is no risk of contaminating the silicon wafer, and stable conductive performance can be ensured. Further, the electrode 5 can be easily removed by the oxidation treatment, and therefore, the dispersion plate can be easily reused and the running cost of the plasma etching apparatus can be reduced.
〔実施例１〕 カーボン蒸着装置内の真空度を３×10-4Paに設定し、
作動条件を40A,10分に設定して、カーボン蒸着を行った
ところ、基板７には厚さ1.5μｍのカーボン製電極５が
形成された。[Example 1] The degree of vacuum in the carbon vapor deposition apparatus was set to 3 × 10 -4 Pa,
When operating conditions were set to 40 A for 10 minutes and carbon deposition was performed, a carbon electrode 5 having a thickness of 1.5 μm was formed on the substrate 7.
〔実施例２〕 ドライ−グラファイト−フィルム−ラブリカント（Dr
y Graphite Film Lubricant,商品名dgf123,販売元Japan
Ship Machine Tool Co,Ltd）を基板７にスプレー塗布
した後、真空度10-2Pa,温度750℃で、30分間加熱したと
ころ、厚さ１μｍのカーボン製電極５が形成された。Example 2 Dry-Graphite-Film-Lubricant (Dr
y Graphite Film Lubricant, Product name dgf123, Sales agency Japan
(Ship Machine Tool Co., Ltd.) was spray-coated on the substrate 7 and heated at a vacuum of 10 -2 Pa and a temperature of 750 ° C. for 30 minutes to form a carbon electrode 5 having a thickness of 1 μm.
以上詳述したように、この発明のプラズマ分散板は、
仮に電極成分がエッチング中に飛散した場合でも、シリ
コンウエハを汚染するおそれがなく、しかも安定した導
電性能を確保することができるという優れた効果を発揮
する。As described in detail above, the plasma dispersion plate of the present invention is:
Even if electrode components are scattered during etching, there is no danger of contaminating the silicon wafer, and an excellent effect that stable conductive performance can be ensured can be exhibited.
第１図はプラスマエッチング装置を示す概略断面図、第
２図は分散板の拡大断面図である。 ４……分散板、５……電極、７……基板。FIG. 1 is a schematic sectional view showing a plasma etching apparatus, and FIG. 2 is an enlarged sectional view of a dispersion plate. 4 ... dispersion plate, 5 ... electrode, 7 ... substrate.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/3065──────────────────────────────────────────────────の Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/3065
Claims (1)
おいて、前記焼結体の表面にカーボン製の電極を形成し
たことを特徴とするプラズマ分散板。1. A plasma dispersion plate comprising a silicon carbide sintered body, wherein a carbon electrode is formed on the surface of the sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63270337A JP2771194B2 (en) | 1988-10-25 | 1988-10-25 | Plasma dispersion plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63270337A JP2771194B2 (en) | 1988-10-25 | 1988-10-25 | Plasma dispersion plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02116127A JPH02116127A (en) | 1990-04-27 |
| JP2771194B2 true JP2771194B2 (en) | 1998-07-02 |
Family
ID=17484849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63270337A Expired - Lifetime JP2771194B2 (en) | 1988-10-25 | 1988-10-25 | Plasma dispersion plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2771194B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5411098B2 (en) * | 2010-09-17 | 2014-02-12 | 東京エレクトロン株式会社 | Dividable electrode, plasma processing apparatus using the electrode, and electrode exchange method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6156852A (en) * | 1984-08-25 | 1986-03-22 | Fanuc Ltd | Cutting chip removing device of machine tool |
| US4641161A (en) * | 1984-09-28 | 1987-02-03 | Texas Instruments Incorporated | Heterojunction device |
| JPS6226820A (en) * | 1985-07-26 | 1987-02-04 | Ibiden Co Ltd | Silicon carbide plasma dispersing plate |
-
1988
- 1988-10-25 JP JP63270337A patent/JP2771194B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02116127A (en) | 1990-04-27 |
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