JP2763628B2 - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP2763628B2 JP2763628B2 JP1298235A JP29823589A JP2763628B2 JP 2763628 B2 JP2763628 B2 JP 2763628B2 JP 1298235 A JP1298235 A JP 1298235A JP 29823589 A JP29823589 A JP 29823589A JP 2763628 B2 JP2763628 B2 JP 2763628B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor device
- optical semiconductor
- diffusion region
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は光電変換部のみもしくは光電変換部と増幅回
路部が一体化された光半導体装置に関するもので、光電
変換部の表面にアース電位に接続される層を全面もしく
は一部に付設して、シールド効果をもたせることで、耐
ノイズ性を要求される産業用光半導体装置を提供するも
のである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which a photoelectric conversion unit alone or a photoelectric conversion unit and an amplifier circuit unit are integrated, and the surface of the photoelectric conversion unit is connected to a ground potential. The present invention provides an industrial optical semiconductor device requiring noise resistance by providing a shielding layer by attaching a layer to the entire surface or a part thereof.
従来の技術 耐ノイズ性を要求される産業機器に光半導体が用いら
れる場合、これまでは第３図に示すように光半導体装置
１の周辺を金属板２もしくは導電性フィルムなどの材料
で囲み、アース電位に接続する構造でシールド効果をも
たらしている。かかる構造では光電変換部の領域に開口
部３を設ける必要があり、この開口部を通して周辺ノイ
ズを受けやすい欠点を有していた。2. Description of the Related Art In the case where an optical semiconductor is used for industrial equipment that requires noise resistance, the periphery of the optical semiconductor device 1 has been surrounded by a material such as a metal plate 2 or a conductive film as shown in FIG. The structure connected to the ground potential provides a shielding effect. In such a structure, it is necessary to provide the opening 3 in the region of the photoelectric conversion unit, and there is a disadvantage that the noise is easily received through the opening.
発明が解決しようとする課題 シールド効果をもたらす従来の構造では、光半導体装
置の周辺に導電性材料を個別に付設する必要があり、手
間と取り付けコストがかかるという問題があった。ま
た、光電変換部の領域に開口部を設ける必要があり、耐
ノイズ性の向上がむずかしいという問題があった。Problems to be Solved by the Invention In the conventional structure that provides a shielding effect, it is necessary to separately attach a conductive material to the periphery of the optical semiconductor device, and there is a problem that labor and mounting costs are required. In addition, it is necessary to provide an opening in the region of the photoelectric conversion unit, and there is a problem that it is difficult to improve noise resistance.
課題を解決するための手段 上記の問題点を解決するために、本発明は、半導体装
置の光電変換部の表面に光を透過するシールド層を新た
に付設し、かつその層から電極配線を引出し、その電位
をアース電位に接続することでシールド効果を大幅に向
上させる新しい構造のものである。Means for Solving the Problems In order to solve the above problems, the present invention newly provides a shield layer for transmitting light on the surface of a photoelectric conversion portion of a semiconductor device, and extends an electrode wiring from the layer. And a new structure in which the potential is connected to the ground potential to greatly improve the shielding effect.
作用 本発明による新しいシールド構造によれば、光電変換
部のチップ表面に直接シールド層を付設するため後工程
でシールドの手間がいらないとともに、光を透過する層
を用いることで金属板のような開口部も不要であり、シ
ールド層の電位をアース電位に接続することで耐ノイズ
性を大幅に向上させることが可能となった。According to the new shield structure of the present invention, a shield layer is directly attached to the surface of the chip of the photoelectric conversion unit, so that there is no need for a shield in a later step, and an opening such as a metal plate is formed by using a light transmitting layer. No portion is required, and noise resistance can be greatly improved by connecting the potential of the shield layer to the ground potential.
実施例 本発明による一実施例を第１図に示す。（ａ）は本半
導体装置の光電変換部近傍の断面図を示し、（ｂ）は平
面図を示す。Ｐ型基板４にＮ型領域５が形成されて光電
変換部６を構成している。光電変換部６は通常エピタキ
シャル層がむきだしになっており、かつ回路の入力に接
続されているためコモンモードノイズを受けると誤動作
を引き起こしやすい問題があった。本発明では光電変換
部６の表面にシールド層７がストライプ状に新たに付設
してある。ストライプ幅は100μｍで、ストライプのな
い領域を200μｍにしてある。このシールド層から電極
配線を引出し外部リード部にAuワイヤなどで接続しアー
ス電位につないでいる。シールド層は光を透過する層で
あるSP層（「Shallow−ｐ層」、浅いｐ型拡散層）で形
成しており、本実施例では赤外光に対し90％の透過率を
有するため、光感度を低下させることなくシールド効果
を大幅に向上させている。またシールド層７をストライ
プ状にすることにより、接合容量を少なくし、高周波特
性の向上をはかることができる。Embodiment One embodiment according to the present invention is shown in FIG. (A) is a cross-sectional view of the vicinity of the photoelectric conversion unit of the semiconductor device, and (b) is a plan view. An N-type region 5 is formed on a P-type substrate 4 to constitute a photoelectric conversion unit 6. The photoelectric conversion unit 6 has a problem in that the epitaxial layer is usually exposed and connected to the input of the circuit, so that common operation noise easily causes a malfunction. In the present invention, a shield layer 7 is newly provided on the surface of the photoelectric conversion unit 6 in a stripe shape. The stripe width is 100 μm, and the area without stripes is 200 μm. The electrode wiring is drawn out from the shield layer and connected to the external lead portion with an Au wire or the like and connected to the ground potential. The shield layer is formed of an SP layer (“Shallow-p layer”, a shallow p-type diffusion layer) that is a layer that transmits light. In this embodiment, the shield layer has a transmittance of 90% for infrared light. The shielding effect is greatly improved without lowering the light sensitivity. Further, by forming the shield layer 7 in a stripe shape, the junction capacitance can be reduced and the high-frequency characteristics can be improved.
本発明の他の実施例としてチップ平面図を第２図に示
す。光電変換部は全面シールド層７を付設しており、ア
ース電位にシールド層が接続されている。本実施例では
光電変換部６と増幅回路部８が１チップ内に付設された
集積回路チップ９を用いており、リードフレームにワイ
ヤ結線をしたのちその周辺を透明樹脂にて封止された光
半導体装置の構成となっている。なお、本発明の実施例
ではシールド層７としてＰ型の拡散層で行ったが透明導
電膜の堆積でも同様の結果が得られることは言うまでも
ない。FIG. 2 is a plan view of a chip as another embodiment of the present invention. The photoelectric conversion unit is provided with a whole shield layer 7, and the shield layer is connected to the ground potential. In this embodiment, an integrated circuit chip 9 in which the photoelectric conversion unit 6 and the amplification circuit unit 8 are provided in one chip is used. After connecting wires to the lead frame, the periphery of the light is sealed with a transparent resin. It has a configuration of a semiconductor device. In the embodiment of the present invention, a P-type diffusion layer is used as the shield layer 7, but it goes without saying that a similar result can be obtained by depositing a transparent conductive film.
発明の効果 本発明に示したように光電変換部の表面の一部もしく
は全面にシールド層を付設しアース電位に接続すること
で、シールド効果のすぐれた耐ノイズ性の良好な光半導
体装置を提供することができる。かかる方法により、誤
動作のない装置を容易に実現できる。Effect of the Invention As shown in the present invention, by providing a shield layer on a part or the entire surface of the photoelectric conversion unit and connecting it to the ground potential, an optical semiconductor device with excellent shielding effect and good noise resistance is provided. can do. With this method, a device free from malfunction can be easily realized.
第１図は本発明の一実施例であり、（ａ）は光電変換部
の断面図を、（ｂ）は平面図、第２図は本発明の他の実
施例を示す平面図、第３図は従来の光半導体装置を示す
断面図である。 ４……Ｐ型基板、５……Ｎ型領域、６……光電変換部、
７……シールド層。1A and 1B show an embodiment of the present invention. FIG. 1A is a sectional view of a photoelectric conversion unit, FIG. 1B is a plan view, FIG. 2 is a plan view showing another embodiment of the present invention, and FIG. FIG. 1 is a sectional view showing a conventional optical semiconductor device. 4... P-type substrate, 5... N-type region, 6.
7 ... Shield layer.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭64−37061（ＪＰ，Ａ) 特開 平２−275680（ＪＰ，Ａ) 実開 昭64−11557（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-64-37061 (JP, A) JP-A-2-275680 (JP, A) JP-A 64-11557 (JP, U)
Claims (3)
域を設けて光電変換部を構成し、前記逆導電形の拡散領
域の表面領域に部分的に前記逆導電形の拡散領域よりも
拡散深さの浅い一導電形の浅い拡散領域を設け、前記一
導電形の浅い拡散領域がアース電位に接続されている光
半導体装置。An opposite conductivity type diffusion region is provided on a semiconductor substrate of one conductivity type to form a photoelectric conversion portion, and a surface region of the diffusion region of the opposite conductivity type is partially covered by the diffusion region of the opposite conductivity type. An optical semiconductor device in which a shallow diffusion region of one conductivity type having a shallow diffusion depth is provided, and the shallow diffusion region of one conductivity type is connected to a ground potential.
領域の表面領域にストライプ状、メッシュ状もしくは放
射状に設けられている請求項１記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein the shallow diffusion region of one conductivity type is provided in a stripe, mesh or radial shape on the surface region of the diffusion region of the opposite conductivity type.
き出した請求項１記載の光半導体装置。3. The optical semiconductor device according to claim 1, wherein the electrode wiring is drawn from a shallow diffusion region of one conductivity type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298235A JP2763628B2 (en) | 1989-11-16 | 1989-11-16 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1298235A JP2763628B2 (en) | 1989-11-16 | 1989-11-16 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03159180A JPH03159180A (en) | 1991-07-09 |
| JP2763628B2 true JP2763628B2 (en) | 1998-06-11 |
Family
ID=17856985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1298235A Expired - Lifetime JP2763628B2 (en) | 1989-11-16 | 1989-11-16 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2763628B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW504849B (en) * | 1997-02-25 | 2002-10-01 | Matsushita Electric Ind Co Ltd | Optical receiver |
| KR100575098B1 (en) * | 1997-10-01 | 2006-08-11 | 마츠시타 덴끼 산교 가부시키가이샤 | Receiver |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6411557U (en) * | 1987-07-08 | 1989-01-20 | ||
| JPS6437061A (en) * | 1987-07-31 | 1989-02-07 | Nec Corp | Photodetector |
| JPH02275680A (en) * | 1989-04-17 | 1990-11-09 | Nec Corp | Optical semiconductor integrated circuit device |
-
1989
- 1989-11-16 JP JP1298235A patent/JP2763628B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03159180A (en) | 1991-07-09 |
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