JP2748066B2 - Reflector - Google Patents

Reflector

Info

Publication number
JP2748066B2
JP2748066B2 JP4104400A JP10440092A JP2748066B2 JP 2748066 B2 JP2748066 B2 JP 2748066B2 JP 4104400 A JP4104400 A JP 4104400A JP 10440092 A JP10440092 A JP 10440092A JP 2748066 B2 JP2748066 B2 JP 2748066B2
Authority
JP
Japan
Prior art keywords
layer
thickness
sio
reflectance
zro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4104400A
Other languages
Japanese (ja)
Other versions
JPH05297207A (en
Inventor
良男 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujinon Corp
Original Assignee
Fujinon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujinon Corp filed Critical Fujinon Corp
Priority to JP4104400A priority Critical patent/JP2748066B2/en
Publication of JPH05297207A publication Critical patent/JPH05297207A/en
Application granted granted Critical
Publication of JP2748066B2 publication Critical patent/JP2748066B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0816Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G02B5/0875Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は種々の光学系等において
用いられる反射鏡に関し、詳しくは銀層上に複数の保護
層を有する銀反射鏡に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflector used in various optical systems, and more particularly to a silver reflector having a plurality of protective layers on a silver layer.

【0002】[0002]

【従来の技術】種々の光学系において用いられる反射鏡
として基板上に銀層を蒸着してなる銀反射鏡が知られて
いる。
2. Description of the Related Art A silver reflector formed by depositing a silver layer on a substrate is known as a reflector used in various optical systems.

【0003】銀反射鏡はアルミニウム反射鏡と比べて可
視光領域で反射率が高く分光反射特性に優れているため
注目されている。
[0003] Silver reflecting mirrors have attracted attention because they have higher reflectance in the visible light region and higher spectral reflection characteristics than aluminum reflecting mirrors.

【0004】銀反射鏡はこのような長所を有する一方で
耐久性等の強度面で問題があるため銀層上に保護層を設
けたものが知られている。
[0004] While a silver reflecting mirror has such an advantage, it has a problem in strength such as durability, so that a mirror provided with a protective layer on a silver layer is known.

【0005】銀反射鏡の保護層としては酸化アルミニウ
ム、酸化ジルコニウムおよび二酸化ケイ素をこの順に積
層してなるものが知られており、これにより良好な反射
特性を維持しつつ耐摩耗性の向上を図ることができる。
[0005] As a protective layer of a silver reflector, a layer formed by laminating aluminum oxide, zirconium oxide and silicon dioxide in this order is known, thereby improving abrasion resistance while maintaining good reflection characteristics. be able to.

【0006】[0006]

【発明が解決しようとする課題】ところで、この銀反射
鏡の偏光特性の良否は、P偏光反射率とS偏光反射率の
差により判断され、この差が大きいと偏光成分に応じて
入射光の反射率が大きく変化してしまうことから、特に
可視領域においては上記反射率の差は1%程度以内とす
るのが好ましい。
By the way, the quality of the polarization characteristics of the silver reflecting mirror is judged by the difference between the P-polarized light reflectance and the S-polarized light reflectance. Since the reflectance greatly changes, it is preferable that the difference in the reflectance be within about 1% especially in the visible region.

【0007】しかしながら、銀層上に上述した保護層を
積層すると上記反射率の差が1%程度より大きくなって
しまうおそれがある。
However, when the above-mentioned protective layer is laminated on the silver layer, the difference in the reflectivity may be larger than about 1%.

【0008】本発明はこのような事情に鑑みなされたも
ので、可視領域において、P偏光とS偏光の反射率差を
1%程度以内とし得る3層構成の保護膜を有する反射鏡
を提供することを目的とするものである。
The present invention has been made in view of such circumstances, and provides a reflector having a three-layered protective film capable of making the difference in reflectance between P-polarized light and S-polarized light within the visible region within about 1%. The purpose is to do so.

【0009】[0009]

【課題を解決するための手段】本発明の反射鏡は、基板
上に銀層、酸化アルミニウム層、酸化ジルコニウム層お
よび二酸化ケイ素層をこの順に積層してなる反射鏡であ
って、前記酸化アルミニウム層の厚さを49nm以上89nm以
下に、前記酸化ジルコニウム層の厚さを37nm以上77nm以
下に、前記二酸化ケイ素層の厚さを60nm以上100nm 以下
の厚さに設定してなることを特徴とするものである。
According to the present invention, there is provided a reflector comprising a silver layer, an aluminum oxide layer, a zirconium oxide layer and a silicon dioxide layer laminated on a substrate in this order. The thickness of the zirconium oxide layer is set to a thickness of 37 nm to 77 nm, and the thickness of the silicon dioxide layer is set to a thickness of 60 nm to 100 nm. It is.

【0010】なお、上記構成は上記基板と上記銀層の
間、および銀層と酸化アルミニウム層の間に他の層を設
けることを排除することを意味するものではない。
Note that the above configuration does not mean that other layers are not provided between the substrate and the silver layer and between the silver layer and the aluminum oxide layer.

【0011】[0011]

【作用】上記構成によれば、銀反射鏡の保護層として厚
さが49nm以上89nm以下の酸化アルミニウム層、厚さが37
nm以上77nm以下の酸化ジルコニウム層および厚さが60nm
以上100nm 以下の二酸化ケイ素層をこの順に積層してい
る。
According to the above structure, an aluminum oxide layer having a thickness of not less than 49 nm and not more than 89 nm is used as a protective layer of the silver reflecting mirror.
Zirconium oxide layer with a thickness of not less than nm and not more than 77 nm and thickness of 60 nm
A silicon dioxide layer having a thickness of 100 nm or less is laminated in this order.

【0012】上記3層の厚さの範囲においては、可視領
域の入射光に対して偏光特性が良好となっている。すな
わち、本発明者等の実験結果によれば3層の厚みを上記
範囲に設定すれば可視領域においてP偏光とS偏光の反
射率の差を1%程度以内とすることができる。したがっ
て、本発明の反射鏡によれば、保護層を設けることによ
る偏光特性の低下を防止することができる。
In the above three-layer thickness range, polarization characteristics are good for incident light in the visible region. That is, according to the experimental results of the present inventors, if the thickness of the three layers is set in the above range, the difference between the reflectances of the P-polarized light and the S-polarized light in the visible region can be made within about 1%. Therefore, according to the reflecting mirror of the present invention, it is possible to prevent the polarization characteristics from being deteriorated due to the provision of the protective layer.

【0013】[0013]

【実施例】以下、本発明の実施例を説明する。Embodiments of the present invention will be described below.

【0014】図1は、本発明の実施例に係る反射鏡の層
構成を示す概略図である。この反射鏡はガラス基板1上
に5〜15nm厚のCr層2、10〜40nm厚のCu層3、100n
m 厚のAg層4、49nm〜89nm厚のAl2 3 (酸化アル
ミニウム)層5、37nm〜77nm厚のZrO2 (酸化ジルコ
ニウム、屈折率1.98)層6および60nm〜100nm 厚のSi
2 (二酸化ケイ素)層7をこの順に積層してなるもの
である。
FIG. 1 is a schematic diagram showing a layer configuration of a reflecting mirror according to an embodiment of the present invention. This reflecting mirror comprises a Cr layer 2 having a thickness of 5 to 15 nm, a Cu layer 3 having a thickness of 10 to 40 nm,
m thick Ag layer 4,49nm~89nm thickness of Al 2 O 3 ZrO 2 (zirconium oxide, refractive index 1.98) of (aluminum oxide) layer 5,37nm~77nm thick layer 6 and 60nm~100nm thick Si
An O 2 (silicon dioxide) layer 7 is laminated in this order.

【0015】上記Cr層2およびCu層3は上記ガラス
基板1とAg層4の密着性を強化するための密着強化層
として作用する。また、上記Ag層4は入射光を反射す
るための層である。上記Al2 3 層5はこのAg層4
の耐久性を向上させるための保護層である。また、Zr
2 層6はAg層4の耐久性向上のための保護層である
とともに反射特性を良好とするための高屈折率誘電体層
である。さらに、最上層のSiO2 層7は耐摩耗性を向
上させるための保護層である。
The Cr layer 2 and the Cu layer 3 function as an adhesion strengthening layer for enhancing the adhesion between the glass substrate 1 and the Ag layer 4. The Ag layer 4 is a layer for reflecting incident light. The above Al 2 O 3 layer 5 is the Ag layer 4
Is a protective layer for improving the durability of the film. Also, Zr
The O 2 layer 6 is a protective layer for improving the durability of the Ag layer 4 and a high refractive index dielectric layer for improving the reflection characteristics. Further, the uppermost SiO 2 layer 7 is a protective layer for improving abrasion resistance.

【0016】次に、図1に示す層構成の反射鏡を製造す
る方法について説明する。
Next, a method of manufacturing the reflecting mirror having the layer structure shown in FIG. 1 will be described.

【0017】まず、清浄化したガラス基板1を保持具に
取り付け、これを真空槽内に挿入し、固定する。真空槽
内を無加熱状態で1×10-6Torr程度となるまで真空排気
する。
First, the cleaned glass substrate 1 is mounted on a holder, which is inserted into a vacuum chamber and fixed. The inside of the vacuum chamber is evacuated without heating to about 1 × 10 −6 Torr.

【0018】この後、電子ビーム蒸着法を用い、ガラス
基板1上に5〜15nm厚のCr層2を形成する。次に、抵
抗加熱蒸着法を用い、このCr層2上に10〜40nm厚のC
u層3を形成する。
Thereafter, a Cr layer 2 having a thickness of 5 to 15 nm is formed on the glass substrate 1 by using an electron beam evaporation method. Next, 10 to 40 nm thick C is deposited on the Cr layer 2 by using a resistance heating evaporation method.
The u layer 3 is formed.

【0019】この後、抵抗加熱蒸着法を用い、このCu
層3上に500nm 厚のAg層4を形成する。次に、電子ビ
ーム蒸着法を用い、このAg層4上に49nm〜89nm厚のA
23 層5を形成する。
Thereafter, the Cu film is formed by resistance heating evaporation.
An Ag layer 4 having a thickness of 500 nm is formed on the layer 3. Next, a 49 nm to 89 nm thick A is deposited on the Ag layer 4 by using an electron beam evaporation method.
An l 2 O 3 layer 5 is formed.

【0020】この後、上記真空槽を、上記ガラス基板1
の温度が300 ℃となるように加熱する。この加熱処理に
より、この後に形成されるZrO2 層6およびSiO2
層7の強度を高めることができる。
Thereafter, the vacuum chamber is connected to the glass substrate 1.
Is heated to a temperature of 300 ° C. By this heat treatment, the ZrO 2 layer 6 and SiO 2
The strength of the layer 7 can be increased.

【0021】なお、これよりも前の段階で加熱処理を行
なうとAg層4やCu層3等の金属層が結晶化してくも
り現象(白濁)が生じ、光反射率が低下するので好まし
くない。
If the heat treatment is performed at a stage earlier than this, the metal layers such as the Ag layer 4 and the Cu layer 3 are crystallized, and a clouding phenomenon (white turbidity) occurs, and the light reflectance is undesirably reduced.

【0022】この後、電子ビーム蒸着法を用い、上記A
2 3 層5上に37nm〜77nm厚のZrO2 層6を形成す
る。
Thereafter, the above A
A ZrO 2 layer 6 having a thickness of 37 nm to 77 nm is formed on the l 2 O 3 layer 5.

【0023】最後に、電子ビーム蒸着法を用い、このZ
rO2 層6上に60nm〜100nm 厚のSiO2 層7を形成す
る。
Finally, this Z
An SiO 2 layer 7 having a thickness of 60 nm to 100 nm is formed on the rO 2 layer 6.

【0024】なお、本発明の反射鏡としては上述した実
施例のものに限られるものではない。
The reflecting mirror according to the present invention is not limited to the above-described embodiment.

【0025】例えば、ガラス基板1を金属基板やプラス
チック基板に代えることも可能である。
For example, the glass substrate 1 can be replaced with a metal substrate or a plastic substrate.

【0026】また、Cr層2およびCu層3は適宜省略
することも可能である。
Further, the Cr layer 2 and the Cu layer 3 can be omitted as appropriate.

【0027】さらに、各層を形成する蒸着方法としては
上述した方法に限られず、例えば上述した説明で、層を
形成する際に、電子ビーム蒸着法を用いているものにつ
いてはこれに代えて抵抗加熱蒸着法を用いてもよいし、
抵抗加熱蒸着法を用いているものについてはこれに代え
て電子ビーム蒸着法を用いてもよい。
Further, the vapor deposition method for forming each layer is not limited to the above-described method. For example, in the above description, when a layer is formed by using an electron beam vapor deposition method, resistance heating is used instead. An evaporation method may be used,
For those using the resistance heating evaporation method, an electron beam evaporation method may be used instead.

【0028】ところで、銀反射鏡は保護層を設けること
により偏光特性が劣化する傾向にあるが、上記実施例に
おいては、Al2 3 層5の厚みを49nm〜89nmに、Zr
2層6の厚みを37nm〜77nm、さらにSiO2 層7の厚
みを60nm〜100nm に設定しているのでP偏光とS偏光の
反射率差を1%程度以内とすることができる。
By the way, the polarizing characteristics of the silver reflecting mirror tend to be deteriorated by providing a protective layer. In the above embodiment, the thickness of the Al 2 O 3 layer 5 is set to 49 nm to 89 nm, and
Since the thickness of the O 2 layer 6 is set to 37 nm to 77 nm and the thickness of the SiO 2 layer 7 is set to 60 nm to 100 nm, the difference in reflectance between the P-polarized light and the S-polarized light can be kept within about 1%.

【0029】次に、上記Al2 3 層5の厚さを69nm
に、上記ZrO2 層6の厚さを57nmに各々設定し、Si
2 層7の厚さを40nmから120nm までの間で10nm毎に設
定した際における各々の分光反射率特性を図2〜10に示
す。
Next, the thickness of the Al 2 O 3 layer 5 is set to 69 nm.
The thickness of the ZrO 2 layer 6 was set to 57 nm,
FIGS. 2 to 10 show the respective spectral reflectance characteristics when the thickness of the O 2 layer 7 is set every 10 nm from 40 nm to 120 nm.

【0030】すなわちSiO2 層7の厚さを40nmとした
場合を図2に、50nmとした場合を図3に、60nmとした場
合を図4に、70nmとした場合を図5に、80nmとした場合
を図6に、90nmとした場合を図7に、100nm とした場合
を図8に、110nm とした場合を図9に、120nm とした場
合を図10に示す。
That is, FIG. 2 shows the case where the thickness of the SiO 2 layer 7 is 40 nm, FIG. 3 shows the case where the thickness is 50 nm, FIG. 4 shows the case where the thickness is 60 nm, and FIG. 6, FIG. 7 shows the case of 90 nm, FIG. 8 shows the case of 100 nm, FIG. 9 shows the case of 110 nm, and FIG. 10 shows the case of 120 nm.

【0031】なお、図2〜10には分光反射特性を示す3
本の曲線が表わされている。記号Sが付されている曲線
はS偏光成分の反射率を、記号Pが付されている曲線は
P偏光成分の反射率を、これら両曲線の中間に位置する
曲線はS偏光成分とP偏光成分両者の反射率の平均値を
表わす曲線である。また、全ての図面は入射角度を45°
に設定した場合について示している。
2 to 10 show spectral reflection characteristics.
The curves are represented. The curve with the symbol S indicates the reflectance of the S-polarized component, the curve with the symbol P indicates the reflectance of the P-polarized component, and the curve located between the two curves will be the S-polarized component and the P-polarized component. It is a curve showing the average value of the reflectance of both components. In addition, all drawings have an incident angle of 45 °
The case where it is set to is shown.

【0032】この図2〜10によれば、曲線Sと曲線Pの
長波長側の接点(もしくは交叉点)がSiO2 層7の厚
みが増加するにしたがって短波長側に移動し、2つの交
叉点に挟まれる波長領域の偏光反射率差が小さくなる。
しかしながら、SiO2 層7が100nm 以上となると長波
長側の接点(もしくは交叉点)より長波長側において曲
線Sと曲線Pの開きが大きくなる部分が可視領域となる
ので良好な偏光特性を得ることが困難となる。
According to FIGS. 2 to 10, the long-wavelength contact point (or intersection point) of the curves S and P moves to the short-wavelength side as the thickness of the SiO 2 layer 7 increases, and The difference in polarization reflectance in the wavelength region between the points is reduced.
However, when the SiO 2 layer 7 has a thickness of 100 nm or more, a portion where the difference between the curves S and P becomes larger on the long wavelength side from the contact (or intersection) on the long wavelength side becomes a visible region, so that good polarization characteristics can be obtained. Becomes difficult.

【0033】すなわち、SiO2 層7が60nm〜100nm の
範囲の場合に偏光特性が良好(S偏光とP偏光の反射率
差が1%程度以内)となる。
That is, when the SiO 2 layer 7 has a thickness in the range of 60 nm to 100 nm, the polarization characteristics are good (the reflectance difference between S-polarized light and P-polarized light is within about 1%).

【0034】次に、Al2 3 層5の厚さを49nm、69n
m、89nmと変化させ、またZrO2 層6の厚さを37nm、5
7nm、77nmと変化させた各々の場合において、SiO2
層7の厚さを60nm、80nm、100nm と変化させて上記2つ
の偏光の反射率差を測定し、その結果を下記表1,2,
3に示した。
Next, the thickness of the Al 2 O 3 layer 5 is set to 49 nm, 69 n
m, 89 nm, and the thickness of the ZrO 2 layer 6 is 37 nm, 5 nm.
In each case changed to 7 nm and 77 nm, SiO 2
The thickness difference of the layer 7 was changed to 60 nm, 80 nm, and 100 nm, and the difference between the reflectances of the two polarized lights was measured.
3 is shown.

【0035】この反射率差が全可視領域において1%以
内の場合には○、可視領域の一部で1%を若干越える場
合には△の印を付した。
When the difference in reflectance was within 1% in the entire visible region, the mark was marked with "O", and when the difference was slightly over 1% in a part of the visible region, the mark was marked with "付".

【0036】[0036]

【表1】 [Table 1]

【0037】[0037]

【表2】 [Table 2]

【0038】[0038]

【表3】 [Table 3]

【0039】上記3つの表から明らかなように、Al2
3 層5の厚み、ZrO2 層6の厚みおよびSiO2
7の厚みを上述した如く各々変化させた各場合において
2つの偏光の反射率差を1%程度以内とすることができ
る。
As is clear from the above three tables, Al 2
In each case where the thickness of the O 3 layer 5, the thickness of the ZrO 2 layer 6 and the thickness of the SiO 2 layer 7 are changed as described above, the reflectance difference between the two polarized lights can be made within about 1%.

【0040】また、SiO2 層7の厚さが80nmおよび10
0nm の場合には、Al2 3 層5の厚さが89nmでZrO
2 層6の厚さが77nmのときに上記反射率差が1%程度よ
り大きくなるが、Al2 3 層5の厚さを若干小さくす
るか、ZrO2 層6の厚さを若干小さくすることによっ
て1%程度以内の反射率差とすることが可能である。
The thickness of the SiO 2 layer 7 is 80 nm and 10 nm.
In the case of 0 nm, the thickness of the Al 2 O 3 layer 5 is 89 nm and ZrO
When the thickness of the two layers 6 is 77 nm, the reflectance difference becomes larger than about 1%. However, the thickness of the Al 2 O 3 layer 5 is slightly reduced or the thickness of the ZrO 2 layer 6 is slightly reduced. Thereby, it is possible to make the reflectance difference within about 1%.

【0041】なお、上述した実施例について下記の如き
膜強度試験を行なったがSiO2 層7の表面に傷は生じ
なかった。
A film strength test as described below was conducted for the above-described embodiment, but no scratch was generated on the surface of the SiO 2 layer 7.

【0042】すなわち、この試験方法は、清浄なチーズ
クロスを1ポンドの力で反射鏡表面に押圧し、この表面
上で一方向に25往復させ、その後反射鏡表面の傷を目視
により検査する方法である。
That is, in this test method, a clean cheese cloth is pressed against the surface of a reflecting mirror with a force of 1 pound, and reciprocated 25 times on the surface in one direction, and thereafter, the surface of the reflecting mirror is visually inspected for scratches. It is.

【0043】[0043]

【発明の効果】以上に説明した如く本発明の反射鏡によ
れば、3つの保護層の厚みを各々所定の値に設定するこ
とによりP偏光とS偏光の反射率差を1%程度以内とす
ることができ、3層構造の保護層により膜強度の強化を
図りつつ偏光特性を良好なものとすることができる。
As described above, according to the reflector of the present invention, by setting the thickness of each of the three protective layers to a predetermined value, the reflectance difference between the P-polarized light and the S-polarized light can be kept within about 1%. The polarization characteristics can be improved while the film strength is enhanced by the protective layer having a three-layer structure.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例に係る反射鏡の層構成を示す概
略図
FIG. 1 is a schematic diagram showing a layer configuration of a reflecting mirror according to an embodiment of the present invention.

【図2】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、40nmの場合の分光特性を示すグラフ
FIG. 2 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 40 nm, respectively.

【図3】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、50nmの場合の分光特性を示すグラフ
FIG. 3 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 50 nm, respectively.

【図4】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、60nmの場合の分光特性を示すグラフ
FIG. 4 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 60 nm, respectively.

【図5】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、70nmの場合の分光特性を示すグラフ
FIG. 5 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 70 nm, respectively.

【図6】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、80nmの場合の分光特性を示すグラフ
FIG. 6 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 80 nm, respectively.

【図7】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、90nmの場合の分光特性を示すグラフ
FIG. 7 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 90 nm, respectively.

【図8】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、100nm の場合の分光特性を示すグラ
FIG. 8 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 100 nm, respectively.

【図9】Al2 3 層、ZrO2 層、SiO2 層の層厚
が各々69nm、57nm、110nm の場合の分光特性を示すグラ
FIG. 9 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 110 nm, respectively.

【図10】Al2 3 層、ZrO2 層、SiO2 層の層
厚が各々69nm、57nm、120nm の場合の分光特性を示すグ
ラフ
FIG. 10 is a graph showing spectral characteristics when the thicknesses of an Al 2 O 3 layer, a ZrO 2 layer, and a SiO 2 layer are 69 nm, 57 nm, and 120 nm, respectively.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 Cr層 3 Cu層 4 Ag層 5 Al2 3 層 6 ZrO2 層 7 SiO2 1 glass substrate 2 Cr layer 3 Cu layer 4 Ag layer 5 Al 2 O 3 layer 6 ZrO 2 layer 7 SiO 2 layer

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板上に銀層、酸化アルミニウム層、酸
化ジルコニウム層および二酸化ケイ素層をこの順に積層
してなる反射鏡であって、 前記酸化アルミニウム層の厚さを49nm以上89nm以下に、
前記酸化ジルコニウム層の厚さを37nm以上77nm以下に、
前記二酸化ケイ素層の厚さを60nm以上100nm 以下の厚さ
に設定してなることを特徴とする反射鏡。
1. A reflector comprising a silver layer, an aluminum oxide layer, a zirconium oxide layer and a silicon dioxide layer laminated in this order on a substrate, wherein the thickness of the aluminum oxide layer is 49 nm or more and 89 nm or less,
The thickness of the zirconium oxide layer is 37 nm or more and 77 nm or less,
A reflecting mirror, wherein the thickness of the silicon dioxide layer is set to be not less than 60 nm and not more than 100 nm.
JP4104400A 1992-04-23 1992-04-23 Reflector Expired - Fee Related JP2748066B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4104400A JP2748066B2 (en) 1992-04-23 1992-04-23 Reflector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4104400A JP2748066B2 (en) 1992-04-23 1992-04-23 Reflector

Publications (2)

Publication Number Publication Date
JPH05297207A JPH05297207A (en) 1993-11-12
JP2748066B2 true JP2748066B2 (en) 1998-05-06

Family

ID=14379674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4104400A Expired - Fee Related JP2748066B2 (en) 1992-04-23 1992-04-23 Reflector

Country Status (1)

Country Link
JP (1) JP2748066B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1150424C (en) 1996-10-22 2004-05-19 精工爱普生株式会社 Liquid crystal panel sybstrate liquid crystal panel, and electronic device and projection display device using the same
US7872728B1 (en) 1996-10-22 2011-01-18 Seiko Epson Corporation Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same
EP1439428A3 (en) * 2003-01-14 2009-05-13 ASML Netherlands B.V. Level sensor for lithographic apparatus
CN101784692B (en) * 2007-08-02 2013-03-20 株式会社世可 Process for manufacturing multi-layered thin film by dry vacuum vapor deposition
WO2011048875A1 (en) 2009-10-20 2011-04-28 シグマ光機株式会社 Plate-type broadband depolarizing beam splitter
JP5874150B2 (en) * 2012-01-12 2016-03-02 コニカミノルタ株式会社 Laser scanning optical device

Also Published As

Publication number Publication date
JPH05297207A (en) 1993-11-12

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