JP2746441B2 - A1 Lower 2 O Lower 3 Manufacturing method of base ceramics - Google Patents

A1 Lower 2 O Lower 3 Manufacturing method of base ceramics

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Publication number
JP2746441B2
JP2746441B2 JP1326496A JP32649689A JP2746441B2 JP 2746441 B2 JP2746441 B2 JP 2746441B2 JP 1326496 A JP1326496 A JP 1326496A JP 32649689 A JP32649689 A JP 32649689A JP 2746441 B2 JP2746441 B2 JP 2746441B2
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Japan
Prior art keywords
sic
whiskers
mixture
dispersion
strength
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JPH03187970A (en
Inventor
守賀 金丸
常男 立野
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Kobe Steel Ltd
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Kobe Steel Ltd
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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、Al2O3基セラミックスの製造方法に関し、
詳細には、靭性及び耐摩耗性を必要とする切削工具やダ
イス抽伸プラグ等の治工具類、電気伝導性及び耐熱衝撃
性を必要とするセラミックスヒータ等の電子部品類、お
よび、耐食性、耐酸化性、耐摩耗性及び破壊靭性を必要
とするメカニカルシールやポンプ等の機械部品類に用い
て好適なAl2O3基セラミックスの製造方法に関する。
The present invention relates to a method for producing Al 2 O 3 based ceramics,
In detail, jigs and tools such as cutting tools and die drawing plugs that require toughness and wear resistance, electronic components such as ceramic heaters that require electrical conductivity and thermal shock resistance, and corrosion resistance and oxidation resistance TECHNICAL FIELD The present invention relates to a method for producing an Al 2 O 3 -based ceramic suitable for use in mechanical parts such as a mechanical seal and a pump that require high performance, wear resistance and fracture toughness.

(従来の技術) Al2O3基セラミックスは、耐食性、耐酸化性、耐摩耗
性が優れ、又、エンジニアリングセラミックスとして多
用されてきたSi3N4等のセラミックスに比して経済性が
優れ、且つ焼結を低温でし得るので、近年その有用性が
見直されてきた。しかしSi3N4に比して強度、高温強
度、破壊靭性および耐熱衝撃性が劣るという欠点があ
る。そこで、Al2O3基セラミックス中に、高強度の針状
結晶を均一に分散し、強度・靭性を向上させようとする
研究が数多くなされている。その結果、SiCウイスカを
マトリックスのAl2O3中に分散させたAl2O3基セラミック
ス(以降、SiCウイスカ分散Al2O3基セラミックスとい
う)及びその製造方法が開発されている。
(Prior art) Al 2 O 3 -based ceramics have excellent corrosion resistance, oxidation resistance, and wear resistance, and are more economical than ceramics such as Si 3 N 4 that have been frequently used as engineering ceramics. In addition, its usefulness has been reviewed in recent years because sintering can be performed at a low temperature. However, there is a disadvantage that the strength, high-temperature strength, fracture toughness and thermal shock resistance are inferior to Si 3 N 4 . Thus, many studies have been made to improve the strength and toughness by uniformly dispersing high-strength needle-like crystals in Al 2 O 3 -based ceramics. As a result, the SiC whiskers Al 2 O 3 Al 2 O 3 based ceramic material (hereinafter, referred to as SiC whiskers dispersed Al 2 O 3 based ceramic material) dispersed in the matrix and a method of manufacturing the same have been developed.

例えば、米国特許第4543345号公報には、0.3μmのAl
2O3粉末とSiCウイスカとを乾式混合した後、該混合体を
1850℃,41MPa,45分間の条件で一軸加圧焼結するSiCウイ
スカ分散Al2O3基セラミックスの製造方法が提示されて
おり、これによれば破壊靭性値が8〜9Kg/mm3/2向上
し、又、破壊強度が800MPa(81.6Kg/mm2)のものまで得
られている。
For example, US Pat. No. 4,543,345 discloses that 0.3 μm Al
After dry mixing 2 O 3 powder and SiC whisker, the mixture is
1850 ° C., 41 MPa, SiC whiskers dispersed Al 2 O 3 group method of manufacturing a ceramic of uniaxial pressure sintering at a 45 minute conditions are presented, according to the fracture toughness value 8~9Kg / mm 3/2 It has been improved and the breaking strength has been obtained up to 800MPa (81.6Kg / mm 2 ).

しかし、上記方法は、SiCウイスカの混合を乾式混合
法により行うものであり、該乾式混合法はSiCウイスカ
を均一に分散させるのが極めて難しいので、上記混合体
にはSiCウイスカの凝集部分や、極少部分が存在するこ
とが多く、その結果前記の如き高強度・高靭性が安定し
て得られ難く、又、従来のAl2O3基セラミックスよりも
強度・靭性が低くなる場合もあるという問題点がある。
それは、かかる凝集部分があると、その内部にはポアが
存在するので、焼結後のセラミックスは該ポアにより強
度が低下するからである。又、上記混合体はSiCウイス
カを含むため焼結は1800℃以上の高温で行われ、SiCウ
イスカ極少部分以外ではSiCウイスカの有する結晶粒成
長抑制作用により結晶粒成長を殆ど生じないが、前記Si
Cウイスカ極少部分では焼結時に異常な結晶粒成長を起
こし、そのため粗大結晶粒を生成し、強度・靭性が低下
するからである。
However, in the above method, the mixing of SiC whiskers is performed by a dry mixing method, and the dry mixing method is extremely difficult to uniformly disperse the SiC whiskers. There is often a problem that a very small portion is present, and as a result, high strength and high toughness as described above are difficult to obtain stably, and strength and toughness may be lower than conventional Al 2 O 3 based ceramics. There is a point.
The reason is that if such a cohesive portion is present, pores are present inside the cohesive portion, so that the sintered ceramics have reduced strength due to the pores. In addition, since the above mixture contains SiC whiskers, sintering is performed at a high temperature of 1800 ° C. or higher, and except for the very small part of the SiC whiskers, almost no crystal grain growth occurs due to the crystal grain growth suppressing action of the SiC whiskers.
The reason is that abnormal crystal grain growth occurs during sintering in the extremely small portion of C whiskers, so that coarse crystal grains are generated and strength and toughness are reduced.

上記対策として、SiCウイスカを溶媒に添加してスラ
リ化し、該スラリとAl2O3粉末とを充分長時間混合し、S
iCウイスカの分散を均一化する事が考えられる。しか
し、長時間混合すると、混合中に針状のSiCウイスカが
欠損し、アスペクト比が著しく低下する。従って、上記
方法は、SiCウイスカが強度及び靭性向上に寄与しなく
なり、焼結体の強度及び靭性が却って低下するという欠
点があり、前記問題点を解決し得ない。
As a countermeasure, SiC whiskers are added to a solvent to form a slurry, and the slurry is mixed with Al 2 O 3 powder for a sufficiently long time to form a slurry.
It is conceivable to make the dispersion of iC whiskers uniform. However, if the mixing is performed for a long time, the acicular SiC whiskers are lost during the mixing, and the aspect ratio is significantly reduced. Therefore, the above method has a drawback that the SiC whisker does not contribute to the improvement of the strength and the toughness, and the strength and the toughness of the sintered body are rather lowered, and the above problem cannot be solved.

そこで、かかる問題点を解決すべく更に検討され、そ
の結果これまでよりも改善されたSiCウイスカ分散Al2O3
基セラミックスの製造方法が開発されてきた。即ち、特
開昭63-30378号公報には、SiCウイスカをエタノール中
に添加し、超音波エネルギを付与してSiCウイスカ分散
液を得、次いで該SiCウイスカ分散液とスラリ状のAl2O3
基セラミックス原料とをボールミル等の湿式ミルにより
攪拌して混合し、該混合体を乾燥して粒状化した後、成
形し、一軸加圧焼結するSiCウイスカ分散Al2O3基セラミ
ックスの製造方法が記載されており、これによれば破壊
強度が83Kg/mm2のものが得られている。
Therefore, further studies have been made to solve such problems, and as a result, an improved SiC whisker dispersion Al 2 O 3
Manufacturing methods for base ceramics have been developed. That is, JP-A-63-30378 discloses that a SiC whisker is added to ethanol, ultrasonic energy is applied to obtain a SiC whisker dispersion, and then the SiC whisker dispersion and slurry Al 2 O 3
A method for producing an Al 2 O 3 -based ceramic in which SiC whiskers are dispersed and stirred by a wet mill such as a ball mill or the like, and the mixture is dried, granulated, molded, and uniaxially pressed and sintered. According to this, a material having a breaking strength of 83 kg / mm 2 was obtained.

(発明が解決しようとする課題) 前記の特開昭63-30378号公報に記載の方法は、これま
での方法に比較すると、針状SiCウイスカがより均一に
分散され、ポアや粗大結晶粒の少ないSiCウイスカ分散A
l2O3基セラミックスが得られるので、高強度・高靭性が
より安定して得られるようになる。しかし、上記SiCウ
イスカの分散の均一性は充分でなく、そのため高強度・
高靭性を安定して得られない場合がある。
(Problems to be Solved by the Invention) In the method described in JP-A-63-30378, the needle-like SiC whiskers are more uniformly dispersed, and the pores and coarse crystal grains are reduced. Low SiC whisker dispersion A
Since l 2 O 3 -based ceramics can be obtained, high strength and high toughness can be obtained more stably. However, the uniformity of the dispersion of the above-mentioned SiC whiskers is not sufficient, and
High toughness may not be obtained stably.

本発明はこの様な事情に着目してなされたものであっ
て、その目的は従来のものがもつ以上のような問題点を
解消し、針状SiCウイスカを確実に均一分散し得、その
ため常に高強度・高靭性を有するSiCウイスカ分散Al2O3
基セラミックスを確実に得ることができるAl2O3基セラ
ミックスの製造方法を提供しようとするものである。
The present invention has been made in view of such circumstances, and its purpose is to solve the above-mentioned problems of the conventional one, and to reliably and uniformly disperse the needle-like SiC whiskers, and therefore always SiC whisker dispersion Al 2 O 3 with high strength and high toughness
An object of the present invention is to provide a method for producing an Al 2 O 3 -based ceramic from which a base ceramic can be reliably obtained.

(課題を解決するための手段) 上記の目的を達成するために、本発明は次のような構
成のAl2O3基セラミックスの製造方法としている。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a method for producing an Al 2 O 3 -based ceramic having the following configuration.

即ち、請求項1に記載の製造方法は、O:0.3〜1.5wt%
のSiCウイスカをアルコールと水との混合溶液中に分散
させ、次いで該SiCウイスカ分散液とスラリ状のAl2O3
セラミックス原料とを混合し、該混合体を乾燥して粒状
化した後、成形し、焼結することを特徴とするAl2O3
セラミックスの製造方法である。
That is, the production method according to claim 1 is characterized in that O: 0.3 to 1.5 wt%
After dispersing the SiC whisker in a mixed solution of alcohol and water, then mixing the SiC whisker dispersion with a slurry-like Al 2 O 3 -based ceramic raw material, drying and granulating the mixture, This is a method for producing an Al 2 O 3 -based ceramic, which is formed and sintered.

請求項2に記載の製造方法は、前記SiCウイスカ分散
液中のSiCウイスカの量が、該分散液に対して20%以下
である請求項1に記載のAl2O3基セラミックスの製造方
法である。
The method according to claim 2, the amount of SiC whiskers of the SiC whiskers dispersion is, in the method of manufacturing Al 2 O 3 based ceramic material according to claim 1 is 20% or less with respect to the dispersion is there.

請求項3に記載の方法は、前記混合体の乾燥を噴霧乾
燥法により行う請求項1に記載のAl2O3基セラミックス
の製造方法である。
The method of claim 3 is a method for producing Al 2 O 3 based ceramic material according to claim 1 for drying the mixture by a spray drying method.

(作用) 本発明は、SiCウイスカの溶媒中での分散性に及ぼすS
iCウイスカ中O量および溶媒の種類の影響を克明に調
べ、その結果得られた知見に基づくものである。即ち、
O:0.3wt%以上のSiCウイスカは溶媒中に比較的均一に分
散し易く、更に該溶媒がアルコールと水との混合溶媒で
ある場合に、前記SiCウイスカの均一分散性が常に極め
て優れているという知見を得た。
(Action) The present invention relates to the effect of S on the dispersibility of SiC whiskers in a solvent.
The effects of the amount of O in iC whiskers and the type of solvent were carefully investigated, and based on the findings obtained. That is,
O: 0.3 wt% or more of SiC whiskers are relatively easily dispersed in a solvent, and when the solvent is a mixed solvent of alcohol and water, the uniform dispersibility of the SiC whiskers is always extremely excellent. I got the knowledge.

そこで、本発明に係るAl2O3基セラミックスの製造方
法は、前述した如く、先ずO:0.3〜1.5wt%のSiCウイス
カをアルコールと水との混合溶液中に分散させるように
している。このようにすると、前記知見に基づき、SiC
ウイスカが常に極めて均一に分散したSiCウイスカ分散
液を得ることができる。又、上記分散は、前記混合溶液
にSiCウイスカを添加したものに超音波エネルギ等の振
動エネルギを付与して行うことができ、かかるエネルギ
を付与は針状のSiCウイスカの欠損を生じ難い。従っ
て、上記SiCウイスカ分散液は殆ど欠損していない針状
のSiCウイスカが常に極めて均一に分散したものにし得
る。
Therefore, the manufacturing method of the Al 2 O 3 based ceramic material according to the present invention, as described above, first, O: The 0.3 to 1.5% of SiC whiskers are so dispersed in the mixed solution of alcohol and water. By doing so, based on the above knowledge, the SiC
It is possible to obtain a SiC whisker dispersion in which whiskers are always very uniformly dispersed. Further, the dispersion can be performed by applying vibration energy such as ultrasonic energy to the mixed solution obtained by adding SiC whiskers, and applying such energy hardly causes needle-like SiC whisker defects. Therefore, the SiC whisker dispersion liquid can be made to have needle-like SiC whiskers, which are almost free from defects, always dispersed very uniformly.

次いで、上記SiCウイスカ分散液とスラリ状のAl2O3
セラミックス原料とを混合するようにしている。該混合
は通常のボールミル等の湿式ミルにより攪拌して行うこ
とができる。このようにすると、スラリ状セラミックス
原料と分散液とが均一に混ざった混合体が容易に得ら
れ、該分散液中にはSiCウイスカが極めて均一に分散し
ているので、上記混合体はSiCウイスカが常に極めて均
一に分散したものになる。又、上記混合は、スラリ状セ
ラミックス原料と分散液とが均一に混ざる程度まで行え
ばよいので、短時間でよく、そのため混合によるSiCウ
イスカの欠損は殆ど生じない。従って、上記混合体は殆
ど欠損していない針状のSiCウイスカが常に極めて均一
に分散したものになる。
Then, the SiC whisker dispersion and the slurry-like Al 2 O 3 -based ceramic raw material are mixed. The mixing can be carried out by stirring with a conventional wet mill such as a ball mill. In this way, a mixture in which the slurry-like ceramic raw material and the dispersion are uniformly mixed is easily obtained, and since the SiC whiskers are extremely uniformly dispersed in the dispersion, the mixture is mixed with the SiC whiskers. Are always very uniformly dispersed. In addition, the above mixing may be performed to such an extent that the slurry-like ceramic raw material and the dispersion liquid are uniformly mixed, so that the mixing may be performed in a short time, and thus, the SiC whiskers are hardly deficient due to the mixing. Therefore, the mixture always has a very uniform dispersion of acicular SiC whiskers with almost no defects.

次に、上記混合体を乾燥して粒状化した後、成形し、
焼結するようにしている。上記混合体は殆ど欠損してい
ない針状SiCウイスカが常に極めて均一に分散したもの
であるので、焼結前の成形体にはSiCウイスカの凝集部
分及び極少部分が存在しない。故に、上記焼結時に異常
な結晶粒成長が極めて生じ難く、そのため焼結後のセラ
ミックスは粗大結晶が無いものになる。又、該セラミッ
クスはポアが存在しないものになる。かかるセラミック
スは高強度・高靭性を有する。従って、常に高強度・高
靭性を有するSiCウイスカ分散Al2O3基セラミックスを確
実に得ることができるようになる。
Next, after drying and granulating the mixture, molding,
Sintered. In the above mixture, needle-like SiC whiskers having almost no defects are always extremely uniformly dispersed, and therefore, the compact before sintering has no agglomerated portion and minimal portion of SiC whiskers. Therefore, abnormal crystal grain growth is extremely unlikely to occur during the sintering, so that the sintered ceramic has no coarse crystals. In addition, the ceramic has no pores. Such ceramics have high strength and high toughness. Therefore, it is possible to surely obtain a SiC whisker-dispersed Al 2 O 3 -based ceramic having high strength and high toughness.

前記SiCウイスカ中のO量を0.3〜1.5wt%としたの
は、0.3wt%未満では溶媒中でのSiCウイスカの均一分散
性が不安定になり、1.5wt%超では高温強度が低下する
ようになるからである。
The reason why the amount of O in the SiC whisker is set to 0.3 to 1.5 wt% is that if the O content is less than 0.3 wt%, the uniform dispersibility of the SiC whisker in the solvent becomes unstable, and if the O content exceeds 1.5 wt%, the high-temperature strength decreases. Because it becomes.

前記SiCウイスカ分散液中のSiCウイスカの量を、該分
散液に対して20%以下にすることが望ましい。このよう
にすると、SiCウイスカの均一分散の程度が特に良くな
るからである。
It is desirable that the amount of the SiC whiskers in the SiC whisker dispersion be 20% or less of the dispersion. This is because the degree of uniform dispersion of the SiC whiskers is particularly improved.

前記混合体の乾燥を噴霧乾燥法により行うことが望ま
しい。このようにすると、瞬時に混合体を乾燥し得るの
で、混合体の生成から焼結までに要する時間が短縮さ
れ、それだけSiCウイスカの均一分散の程度を高く保持
した状態で焼結し得るようになるからである。
Desirably, the mixture is dried by a spray drying method. By doing so, the mixture can be dried instantaneously, so that the time required from the generation of the mixture to sintering is reduced, and the sintering can be performed while maintaining a high degree of uniform dispersion of the SiC whiskers. Because it becomes.

前記スラリ状のAl2O3基セラミックス原料は、Al2O3
セラミックス原料の粉末とスラリ化溶剤との混合体であ
る。該セラミックス原料はAl2O3のみの場合と、Al2O3
びTiC,TiN,TiCNの1種または2種以上を含む場合と、更
にこれらにY2O3等の焼結助剤を含む場合とがある。Si3N
4等のセラミックスと同等の高強度・高靭性を要する際
は、Al2O3だけでなくTiC等も添加し、或いは、更に焼結
助剤をも添加した方がよい。
The slurry-like Al 2 O 3 -based ceramic raw material is a mixture of powder of the Al 2 O 3 -based ceramic raw material and a slurrying solvent. The ceramic raw material includes only Al 2 O 3, a case including Al 2 O 3 and one or more of TiC, TiN, and TiCN, and further includes a sintering aid such as Y 2 O 3. There are cases. Si 3 N
When high strength and high toughness equivalent to those of ceramics such as 4 are required, it is better to add not only Al 2 O 3 but also TiC or the like, or a sintering aid.

(実施例) 実施例1 O:0.3wt%,0.5wt%或いは1.5wt%に調整したSiCウイ
スカを、エタノールと水との混合溶液中に添加した後、
超音波エネルギを30分間付与してSiCウイスカ分散液を
得た。
(Example) Example 1 After adding SiC whiskers adjusted to O: 0.3 wt%, 0.5 wt% or 1.5 wt% into a mixed solution of ethanol and water,
Ultrasonic energy was applied for 30 minutes to obtain a SiC whisker dispersion.

次いで、上記SiCウイスカ分散液に、Al2O3粉末とスラ
リとの混合体及び成形用有機バインダを添加し、湿式ミ
ル(ボールミル)により20時間攪拌して混合した後、噴
霧乾燥法により乾燥して混合粉末を得た。該粉末の組成
は第1表に示され、粉末中のSiCウイスカ量は10、20或
いは30%である。上記噴霧乾燥法は、混合体をスターラ
又は超音波エネルギーにより混合しながら、スプレード
ライャにより高温乾燥雰囲気中に噴霧して溶液を蒸発さ
せる方法である。
Next, a mixture of Al 2 O 3 powder and slurry and an organic binder for molding are added to the SiC whisker dispersion, and the mixture is stirred by a wet mill (ball mill) for 20 hours, and then dried by a spray drying method. Thus, a mixed powder was obtained. The composition of the powder is shown in Table 1 and the amount of SiC whiskers in the powder is 10, 20 or 30%. The spray drying method is a method in which a mixture is sprayed into a high-temperature drying atmosphere by a spray dryer while mixing the mixture with a stirrer or ultrasonic energy to evaporate the solution.

次に、上記混合粉末を黒鉛型に詰め込み、Ar雰囲気中
にて温度:1850℃、圧力:200Kg/cm2の条件で、ホっトプ
レスにより45分間一軸加圧焼結を行い、焼結体を得た。
Next, the mixed powder was packed in a graphite mold, and subjected to uniaxial pressure sintering by a hot press for 45 minutes under a condition of a temperature of 1850 ° C. and a pressure of 200 kg / cm 2 in an Ar atmosphere to obtain a sintered body. Obtained.

上記焼結体についてアルキメデス法による相対密度の
測定、及び、3点曲げ法(スパン30mm、室温)による室
温及び高温での抗折強度の測定を行った。その結果を第
1表(実験No.1〜5)に示す。いづれの焼結体も室温で
の抗折強度は71.5Kg/mm2以上、高温での抗折強度39.0Kg
/mm2以上であり、従来のAl2O3基セラミックスに比較し
て高い。相対密度は99.7%以上であり、理論密度に極近
い値である。
The sintered body was measured for relative density by the Archimedes method and for bending strength at room temperature and high temperature by the three-point bending method (span 30 mm, room temperature). The results are shown in Table 1 (Experiments Nos. 1 to 5). Flexural strength of the sintered body even at room temperature of Izure is 71.5Kg / mm 2 or more, the bending strength at high temperature 39.0Kg
/ mm 2 or more, which is higher than conventional Al 2 O 3 based ceramics. The relative density is 99.7% or more, which is a value very close to the theoretical density.

又、上記焼結体のミクロ組織観察を行った。該観察は
1つの焼結体当たり10箇所、1箇所当たり100視野につ
いて行った。その結果、粗大結晶粒やSiCウイスカの凝
集部分は認められなかった。更に、破壊後の試験片の破
壊部分は調べた結果、SiCウイスカの凝集部分は認めら
れなかった。
The microstructure of the sintered body was observed. The observation was performed at 10 locations per sintered body and 100 visual fields per location. As a result, no coarse crystal grains or aggregated portions of SiC whiskers were found. Further, as a result of examining the fracture portion of the test piece after the fracture, no agglomerated portion of the SiC whisker was recognized.

実施例2 比較例1に係る混合粉末の組成を、第2表に示す。第
2表から判る如く、セラミックス原料としてAl2O3だけ
でなく、更にTiC或いはTiNを添加した。かかる混合粉末
は実施例1と同様の方法により得た。
Example 2 The composition of the mixed powder according to Comparative Example 1 is shown in Table 2. As can be seen from Table 2 , not only Al 2 O 3 but also TiC or TiN was added as a ceramic raw material. Such a mixed powder was obtained in the same manner as in Example 1.

実施例1と同様の方法により、上記混合粉末から焼結
体を得、同様の測定を行った。その結果を第2表に示す
(実験No.6〜12)。いづれの焼結体も室温での抗折強度
は97.5Kg/mm2以上であり、従来のAl2O3基セラミックス
に比較して高く、その殆どは100Kg/mm2以上であり、Si3
N4等のセラミックスと同等もしくはそれ以上である。高
温での抗折強度は39.0Kg/mm2以上であり、従来のAl2O3
基セラミックスに比較して高く、その殆どは45Kg/mm2
上であり、Si3N4等のセラミックスと同等もしくはそれ
以上である。相対密度は理論密度に極近い値である。
A sintered body was obtained from the mixed powder in the same manner as in Example 1, and the same measurement was performed. The results are shown in Table 2 (Experiments Nos. 6 to 12). Flexural strength of the sintered body even at room temperature of Izure is a 97.5Kg / mm 2 or more, higher than the conventional Al 2 O 3 based ceramic material, most of it is 100 Kg / mm 2 or more, Si 3
N is 4 etc. of the ceramic is equal to or higher. Flexural strength at high temperatures is at 39.0Kg / mm 2 or more, the conventional Al 2 O 3
It is higher than the base ceramics, most of which is 45 kg / mm 2 or more, which is equal to or higher than ceramics such as Si 3 N 4 . The relative density is a value very close to the theoretical density.

又、実施例1と同様の方法により上記焼結体のミクロ
組織観察を行った結果、粗大結晶粒やSiCウイスカの凝
集部分が認められなかった。
Further, as a result of observing the microstructure of the sintered body in the same manner as in Example 1, no coarse crystal grains or aggregated portions of SiC whiskers were found.

比較例1 比較例1に係る混合粉末の製造条件と組成を第3表に
示す。実験No.13〜15は、実施例2の実験No.6と同様のS
iCウイスカ及びセラミックス原料を使用し、製造条件を
一部変更して実験No.6と同様の組成の焼結体を作った。
すなわち、SiCウイスカを分散させる溶液は、エタノー
ルと水の混合溶液,エタノール或いは水とし、混合体の
乾燥は、噴霧乾燥法或いは温浴乾燥法とした。該温浴乾
燥法は、混合体を入れた容器を温水中に漬けて混合体を
温め、且つ、混合体をスターラで攪拌しながら溶液を蒸
発させる方法である。上記以外の製造条件は実験No.6の
場合と同様である。
Comparative Example 1 Table 3 shows the production conditions and composition of the mixed powder according to Comparative Example 1. Experiments Nos. 13 to 15 were performed in the same manner as in Experiment No. 6 of Example 2.
Using iC whiskers and ceramic raw materials, a sintered body having the same composition as that of Experiment No. 6 was produced by partially changing the production conditions.
That is, the solution for dispersing the SiC whiskers was a mixed solution of ethanol and water, ethanol or water, and the mixture was dried by spray drying or hot bath drying. The warm bath drying method is a method of immersing a container containing the mixture in warm water to warm the mixture, and evaporating the solution while stirring the mixture with a stirrer. Manufacturing conditions other than the above are the same as those in Experiment No. 6.

実験No.16は分散液中のSiCウイスカ量を35%とし、実
験No.17はSiCウイスカ中O量を0.1wt%とした。その他
の点は実験No.6の場合と同様である。
In Experiment No. 16, the amount of SiC whiskers in the dispersion was 35%, and in Experiment No. 17, the amount of O in SiC whiskers was 0.1% by weight. The other points are the same as in the case of Experiment No. 6.

得られた焼結体について実施例1と同様の方法により
室温での抗折強度測定を行った。その結果、概ね実験N
o.6と同様の抗折強度が得られる場合が多いが、再現性
に少し乏しく、一部のものは強度が極めて低かった。こ
の低強度のものについての抗折強度値を第3表に示す。
これらの値は、第3表から判る如く、実験No.6の場合に
比較して小さく、特に実験No.13〜14及び17のものは極
めて小さい。
The transverse strength of the obtained sintered body was measured at room temperature in the same manner as in Example 1. As a result, the experiment N
In many cases, the same bending strength as o.6 was obtained, but the reproducibility was a little poor, and some of them had extremely low strength. Table 3 shows flexural strength values of the low strength steels.
As can be seen from Table 3, these values are smaller than in the case of Experiment No. 6, and in particular, those of Experiments Nos. 13 to 14 and 17 are extremely small.

又、実施例1と同様の方法により上記焼結体のミクロ
組織観察を行った結果、粗大結晶粒やSiC ウイスカの凝集部分が数%の確立で認められた。更に、
前記低強度のものについて、破壊部分を調べた結果、Si
Cウイスカの凝集部分の存在が認められた。故に、該凝
集部分のボアが破壊の起点になり、強度が低下したもの
と言える。
The microstructure of the sintered body was observed in the same manner as in Example 1, and as a result, coarse crystal grains and SiC were observed. Whisker agglomerated parts were observed at a few percent probability. Furthermore,
As a result of examining the broken portion of the low-strength material,
The presence of aggregated portions of C whiskers was observed. Therefore, it can be said that the bore of the agglomerated portion became the starting point of destruction and the strength was reduced.

(発明の効果) 本発明に係るAl2O3基セラミックスの製造方法によれ
ば、欠損していない針状SiCウイスカが常に極めて均一
に分散した状態の焼結を原料を得ることができるので、
高強度・高靭性を有するSiCウイスカ分散Al2O3基セラミ
ックスを確実に安定して得ることができるようになる。
(Effect of the Invention) According to the method for producing an Al 2 O 3 -based ceramic according to the present invention, it is possible to obtain a raw material in which sintering is performed in which needle-like SiC whiskers having no defect are always extremely uniformly dispersed.
It is possible to reliably and stably obtain a SiC whisker-dispersed Al 2 O 3 -based ceramic having high strength and high toughness.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】O:0.3〜1.5wt%のSiCウイスカをアルコー
ルと水との混合溶液中に分散させ、次いで該SiCウイス
カ分散液とスラリ状のAl2O3基セラミックス原料とを混
合し、該混合体を乾燥して粒状化した後、成形し、焼結
することを特徴とするAl2O3基セラミックスの製造方
法。
1. O: 0.3 to 1.5 wt% of SiC whiskers are dispersed in a mixed solution of alcohol and water, and the SiC whisker dispersion is mixed with a slurry-like Al 2 O 3 -based ceramic raw material. A method for producing an Al 2 O 3 -based ceramic, comprising drying and granulating the mixture, molding and sintering the mixture.
【請求項2】前記SiCウイスカ分散液中のSiCウイスカの
量が、該分散液に対して20%以下である請求項1に記載
のAl2O3基セラミックスの製造方法。
2. The method for producing an Al 2 O 3 -based ceramic according to claim 1, wherein the amount of the SiC whiskers in the SiC whisker dispersion is 20% or less of the dispersion.
【請求項3】前記混合体の乾燥を噴霧乾燥法により行う
請求項1に記載のAl2O3基セラミックスの製造方法。
3. The method for producing an Al 2 O 3 -based ceramic according to claim 1, wherein the mixture is dried by a spray drying method.
JP1326496A 1989-12-15 1989-12-15 A1 Lower 2 O Lower 3 Manufacturing method of base ceramics Expired - Fee Related JP2746441B2 (en)

Priority Applications (1)

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JP2746441B2 true JP2746441B2 (en) 1998-05-06

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2519076B2 (en) * 1988-02-09 1996-07-31 日本特殊陶業株式会社 Method for manufacturing silicon carbide whisker-reinforced ceramics

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