JP2739792B2 - Dielectric recording medium for carrying electrostatic images - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric recording material for carrying an electrostatic image for use in ionography.

[0002]

2. Description of the Related Art A porous anodic oxide film of aluminum or aluminum alloy has low moisture resistance, low environmental stability, low corrosion resistance, and low abrasion resistance because it has numerous micropores in the film itself. Therefore, there is a disadvantage that the durability is poor. Therefore, the porous anodic oxide film is usually subjected to a sealing treatment.

[0003] Conventionally, as a sealing method, boiling water,
Hydration sealing method to seal with pressurized steam, metal salt sealing method to seal with hot water containing metal salt, organic substance sealing method to apply or immerse organic matter such as oils and fats or synthetic resin And so on. As for the organic sealing method, a method of forming a porous anodized aluminum oxide film, performing an adsorption treatment of a silane coupling agent, and then impregnating with an epoxy resin, or impregnating with an epoxy resin mixed with a silane coupling agent is used. It has been proposed (Japanese Unexamined Patent Publication No.
294586). Also, a method of impregnating with waxes (JP-A-60-50083) and a method of impregnating with polytetrafluoroethylene (JP-A-61-193)
157 is also known. It is also known to manufacture an electrophotographic material by providing a photoconductive insulating layer on an anodized aluminum oxide film. (U.S. Pat. No. 4,369,242) In recent years, as a method of copying or printing, a support drum having a dielectric film is used as a dielectric recording material for carrying an electrostatic image, and ions (charged particles) are generated. to generate ions by means to form an electrostatic latent image on the dielectric surface of a recording medium by the ions, the formed electrostatic image is developed with toner, and transferring and fixing the transfer material, an image formation by a so-called ionographic The method is being implemented. In the dielectric recording medium for carrying an electrostatic latent image used in the ionography, a porous anodized aluminum oxide film is used as a dielectric layer. Porous anodized aluminum film is said to have poor moisture resistance, environmental stability and corrosion resistance as it is because the film itself has numerous micropores, and also has low abrasion resistance, so it is inferior in durability. Has disadvantages. Also,
There are drawbacks such as toner particles entering the holes and causing image deterioration. Therefore, it is usual that the porous anodized aluminum film is subjected to a sealing treatment.

[0004]

Among these conventional techniques, the hydration sealing method has insufficient moisture resistance, and the metal salt method using nickel acetate or the like has a problem in that the stability of the sealing bath is low. It has the drawback that it is bad and that powder is easily blown on the surface of the anodic oxide film. On the other hand, in recent years, low-temperature sealing agents containing nickel salts and fluorinated compounds as main components have been developed. However, an object to be treated with this type of low-temperature sealing agent has poor corrosion resistance immediately after the sealing treatment, and requires aging for several hours to several days after the sealing treatment in order to obtain stable corrosion resistance. Has undesired properties. In addition, it has a disadvantage that it is inferior in moisture resistance even after aging.

On the other hand, regarding the organic material sealing method, for example,
When the epoxy resin is impregnated after the adsorption treatment of the silane coupling agent, or when the epoxy resin containing the silane coupling agent is impregnated, the moisture resistance is almost improved, but the surface hardness and the heat stress are reduced. However, there is a problem that the chargeability is not sufficient and the relative dielectric constant is as large as about 7 or more, so that a sufficiently high chargeability cannot be obtained. Further, in these cases, a resin baking treatment step and a subsequent resin surface layer removal treatment step are required after the impregnation step, which causes problems such as a complicated process, a reduction in yield, and a decrease in reproducibility of characteristics. there were. Also, when a wax or a polytetrafluoroethylene is impregnated as a sealing material, the chargeability and moisture resistance are low, the surface hardness is not sufficient, or a porous anodized aluminum oxide film as a dielectric layer is formed. Had poor adhesion. Also, in the production of the electrophotographic material described in the above U.S. Patent Specification, the photoconductive insulating layer formed on the porous anodized aluminum oxide film is formed by, for example, CdS by a high-frequency sputtering method. It was not yet sufficient in terms of adhesion and denseness.

[0006] The present invention has been made in view of the above-mentioned problems in the prior art. An object of the present invention is to provide a dielectric recording medium for carrying an electrostatic latent image which has high surface hardness, high moisture resistance, environmental stability, high corrosion resistance, and excellent mechanical properties and electrical properties.

[0007]

Means for Solving the Problems The present inventors have found that the above object can be achieved by providing an inorganic film on the surface of an anodized aluminum oxide film by a plasma CVD method or the like. Reached. The dielectric recording medium for carrying an electrostatic latent image of the present invention includes a support, a porous anodized aluminum film provided on the support, and a silicon nitride provided on the porous anodized aluminum film. film, silicon carbide film, a silicon oxide film consists of at least one from the consisting inorganic film selected from a diamond-like carbon film and an amorphous carbon film, air in the pores of the porous anodic aluminum oxide film Or close the vacuum
The opening end of the hole is closed by an inorganic film while being kept in the air.

Hereinafter, the dielectric recording medium for carrying an electrostatic latent image of the present invention will be described in detail. FIG. 1 shows a dielectric for carrying an electrostatic latent image of the present invention having an inorganic coating formed by a method of sealing an anodic oxide coating of aluminum or an aluminum alloy.
FIG. 3 is a schematic sectional view of a recording medium . 1 is a support, 2 is a porous anodized aluminum film, and 3 is an inorganic film. The porous anodized aluminum coating 2 consists of a barrier layer part 4 and a porous layer part 5 having a myriad of holes 6 and in which air or vacuum is trapped.
Mom upper open end of the hole is closed by the inorganic film is in a state of being sealed.

In the present invention, as an aluminum material for obtaining an anodized aluminum oxide film having good characteristics, in addition to a pure Al material, an Al—Mg material, an Al—Mg material,
-Si system, Al-Mg-Mn system, Al-Mn system, Al-
Cu-Mg system, Al-Cu-Ni system, Al-Cu system, A
l-Si system, Al-Cu-Zn system, Al-Cu-Si
And aluminum alloy materials such as Al-Mg-Si-based materials. The object to be treated having an aluminum surface is preferably degreased by various degreasing and washing methods such as an acid alkali, an organic solvent, a surfactant, an emulsion, and electrolysis before the anodic oxidation treatment is performed.

Further, in the present invention, the electrostatic latent image bearing for induction
As the support of the electrophotographic recording medium , any of aluminum and its alloys (hereinafter, simply referred to as aluminum), and any of a conductive support and an insulating support other than aluminum can be used. When a support other than aluminum is used, it is necessary that an aluminum film having a thickness of at least 5 μm or more is formed on at least a surface in contact with another layer. This aluminum film can be formed by a vapor deposition method, a sputtering method, or an ion plating method. Examples of the conductive support other than aluminum include metals such as stainless steel, nickel, and chromium and alloys thereof, and examples of the insulating support include polymer films such as polyester, polyethylene, polycarbonate, polystyrene, polyamide, and polyimide. Examples include sheet, glass, and ceramic. The object to be treated having an aluminum surface is preferably degreased by various degreasing and washing methods such as an acid alkali, an organic solvent, a surfactant, an emulsion, and electrolysis before the anodic oxidation treatment is performed.

By anodizing the aluminum surface of the support in an aqueous solution containing an electrolyte, a porous anodized aluminum film comprising a barrier layer having a desired thickness and a porous layer is formed. Anodization can be performed by a known method, and as an electrolyte, sulfuric acid, oxalic acid, chromic acid, phosphoric acid, tartaric acid, sulfamic acid,
Various substances such as benzenesulfonic acid can be used. Among them, the use of oxalic acid or tartaric acid is particularly preferable because it has high heat resistance and is less likely to crack.

For the electrolysis, either direct current or alternating current can be used. Hereinafter, a case where a direct current is applied will be described. However, in the case of an alternating current, an anodized aluminum oxide film can be formed by a similar method. First, the surface is mirror-finished and the support having an aluminum surface processed into a desired shape is ultrasonically cleaned in an organic solvent or a fluorocarbon solvent, and then ultrasonically cleaned in pure water. . Subsequently ,
An anodic aluminum oxide film is formed on a support having an aluminum surface . An electrolytic solution (anodizing solution) made of stainless steel, aluminum plate, hard glass, polyvinyl chloride plate or fiber-reinforced plastic is filled with an electrolyte solution (anodic oxidizing solution) to a predetermined liquid level. As the electrolyte solution, a solution obtained by dissolving the electrolyte in pure water is usually used. The concentration of electrolyte in pure water is 0.05 ~
It is 60% by weight, more preferably 0.5 to 40% by weight. The pure water to be used may be distilled water or ion-exchanged water. Particularly, impurities such as chlorine are sufficiently removed to prevent corrosion of the anodized aluminum film and generation of pinholes. is necessary.

Next, the support having an aluminum surface as described above is immersed in the electrolyte solution, and a stainless steel plate or an aluminum plate is immersed as a cathode with a certain distance between the electrodes. The distance between the electrodes at this time is appropriately set between 0.1 cm and 100 cm. A DC power supply is prepared, its positive (plus) terminal is connected to the aluminum surface, and its negative (minus) terminal is connected to the cathode plate, and current is passed between the anode and cathode electrodes in the electrolyte solution. The electrolysis is performed by a constant current method or a constant voltage method according to a conventional method, and the applied direct current may be composed of only a direct current component or may be a superimposed alternating current component. This energization forms an anodized aluminum oxide film on the aluminum surface of the support serving as the anode. The anodized aluminum oxide film thus formed is composed of a nonporous barrier layer portion having a thickness proportional to the electrolytic voltage, and a porous layer portion formed thereon.

The current density during the anodic oxidation is 0.1 to 1
Set to the range of 0A · dm ^-2 . In consideration of the film growth rate and the cooling efficiency, it is preferable to set the range of 0.5 to 5.0 A · dm ⁻² . The anodic oxidation voltage is usually 3 to 350 V, preferably 7 to 300 V. Also,
The temperature of the electrolyte solution is set to -5 to 95C. In the present invention, from the viewpoints of production efficiency, production rate, film properties, and the like, one of the most preferable examples is to use an aqueous solution of oxalic acid of 1 to 20% by weight and carry out in the range of 0 to 40 ° C. . Another one of the more preferable examples is to use an aqueous solution of tartaric acid of 1 to 40% by weight at a temperature of 0 to 70 ° C. The thickness of the porous anodized aluminum oxide film can be controlled by changing the electrolysis time. In the case of a dielectric recording medium for carrying an electrostatic image,
It is preferable that the thickness be in the range of 70 μm, particularly 10 to 50 μm. In this case, if it is less than 5 μm, the charging potential becomes low, and if it exceeds 70 μm, the production cost becomes high and the film cracks occur, which is not preferable. The anodized aluminum oxide film thus formed is dried if necessary after taking measures such as washing with pure water.

In the present invention, when the total surface area of the anodized aluminum oxide film (porous portion and alumina portion other than the pores) is set to 1, the total value of the surface area of the pores is 0.2 to 0.1.
It is preferably in the range of 8. If the area of the holes is excessively large, the mechanical strength of the anodized aluminum oxide film is reduced.
Since the relative dielectric constant of the recording medium increases and the charging property decreases,
The above range is preferred. Next, an inorganic film is formed on the anodized aluminum film. Materials constituting the inorganic film include SiN _x , SiC _x , aC, S
Examples include iO _x and diamond-like carbon. In particular, aC and diamond-like carbon are preferable because they have a large effect in terms of improving corrosion resistance.

The inorganic film can be formed by a vacuum evaporation method, a glow discharge method, a sputtering method, an ion plating method, a plasma CVD method, an electron beam evaporation method, a hot filament CVD method, or the like. The film thickness is
The thickness is appropriately set to 0.5 μm or more. Preferably, 1-2
It is set in the range of 0 μm. The case where an inorganic film is formed by a plasma CVD method will be described. When forming an SiNx film, silane or a silane derivative, a nitrogen-containing compound, or nitrogen alone may be used as a raw material. As the silane or silane derivative used in that case, specifically, SiH ₄ , Si ₂ H ₆ ,
SiCl ₄ , SiHCl ₃ , SiH ₂ Cl ₂ , Si ₃ H
₈ , Si ₄ H _{10 and the} like. Examples of the nitrogen-containing compound include, for example, NH ₃ , N ₂ H ₄ , HN ₃
Etc. can be given.

When an aC film or a diamond-like carbon film is formed, paraffinic hydrocarbons such as methane, ethane, propane, butane and pentane; olefinic hydrocarbons such as ethylene, propylene, butylene and pentene; acetylene , Acetylene-based hydrocarbons such as arylene and butylene; cyclopropane, cyclobutane, cyclopentane,
Alicyclic hydrocarbons such as cyclohexane; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene and anthracene; and halogenated hydrocarbons such as carbon tetrachloride, chloroform, chlorotrifluoromethane and dichlorodifluoromethane can be used. . When forming a SiC _x film, the above-mentioned hydrocarbon may be used in combination with the above-mentioned silane or silane derivative. When the SiO _x film is formed, the above silane or silane derivative and simple oxygen or an oxygen-containing compound may be used. Examples of the oxygen-containing compound include carbon monoxide, carbon dioxide, nitrogen monoxide, and nitrogen dioxide. In the case of forming an a-Si film, the above silane or silane derivative can be used.

The film forming conditions are as follows. That is,
The frequency is usually 0 to 5 GHz, preferably 0.5 to 3 GHz.
GHz, degree of vacuum at the time of discharge 10 ^{-5 to 5} Torr (0.00
1 to 665 Pa), and the substrate heating temperature is 50 to 400 ° C. According to these plasma CVD methods, a uniform and uniform hard film is formed even in a large area, and the formed inorganic film usually has a high Vickers hardness of about 1000 or more and is dense. Therefore, it is extremely effective as a highly durable sealing material of a porous anodized material.
Further, it is extremely useful for prolonging the life of the dielectric recording medium for holding an electrostatic latent image.

According to the present invention , the surface of the porous anodized aluminum film is at least one selected from a silicon nitride film, a silicon carbide film, a silicon oxide film, a diamond-like carbon film and an amorphous carbon film. The structure is such that air (or a vacuum) is confined in the holes to cover with the inorganic film made of. This air (or vacuum) functions as a dielectric together with the alumina of the base of the anodized aluminum film, but the air (or vacuum) has a relative dielectric constant ε =
Since it is 1, the specific dielectric constant of the whole anodized aluminum oxide film sealed according to the present invention is reduced, and therefore, it greatly contributes to increasing the chargeability as an electrical property. Similarly, in the dielectric recording medium for carrying an electrostatic latent image of the present invention , since the surface of the porous anodized aluminum film is covered with the inorganic film, air (or vacuum) is confined in the hole. It has a structure. This air (or vacuum) functions as a dielectric together with the alumina of the anodized aluminum coating matrix, but the air (or vacuum)
Has a relative dielectric constant of ε = 1, which greatly reduces the relative dielectric constant of the whole anodized aluminum oxide film subjected to the sealing treatment, and therefore greatly contributes to increasing the chargeability.

FIG. 2 shows a model of the electric circuit in that case. In the figure, C ₁ denotes the alumina portion of the anodized aluminum film, C ₂ denotes a hole portion (air or vacuum). When a voltage is applied between the inorganic film surface and the support,
Since a parallel circuit of capacitors as shown in FIG. 2 is formed,
The relative dielectric constant ε of the entire electrostatic latent image-carrying dielectric recording medium is an intermediate value between C ₁ and C ₂ . That is, the relative permittivity of alumina is ε
_1, the relative dielectric constant of the hole portion (air or vacuum) and epsilon _2, the total surface area of the porous anodic aluminum oxide film 1, total S (open area ratio of the surface area of the hole portion of which (air or vacuum) ), Assuming that the total surface area of the alumina portion excluding the hole portion is (1-S), the anodized aluminum oxide film subjected to the sealing treatment of the present invention or the entirety of the electrostatic recording medium for carrying an electrostatic latent image Is expressed by the following equation. That is, ε =
ε ₁ (1-S) + ε ₂ S Relative permittivity ε of air (or vacuum)
₂ is 1 and the relative dielectric constant ε ₁ of alumina is 10, for example, when the pore area ratio S is 0.6,
Is 4.0, and the relative dielectric constant of the whole is much lower than the relative dielectric constant of alumina alone, and therefore, the chargeability as an electrical property is increased.

According to the present invention, a silicon nitride film, silicon carbide
Silicon film, silicon oxide film, diamond-like carbon film and amorphous
Since the inorganic coating made of at least one selected from the porous carbon film is formed using a plasma CVD method or the like,
The formed inorganic film is denser than resin, wax and the like, and has remarkably high moisture resistance and water resistance. That is,
A nitrogen silicon film, a silicon carbide film, or the like formed by using the plasma CVD method of the present invention has a Vickers hardness of 1,000 or more, and particularly, an amorphous carbon film or a diamond-like carbon film has a Vickers hardness of 3,000 or more. In addition, since it is of a high corrosion resistance that is not attacked by acids or alkalis, it can greatly improve the mechanical durability as compared with the anodized aluminum film sealed by the conventional sealing method, and at the same time, has a high moisture and humidity or In addition, it is possible to block the transmission of substances existing in the external environmental atmosphere to the anodized aluminum film. As a result, an anodic aluminum oxide film having excellent moisture resistance and environmental stability can be obtained.

[0022]

Next, the present invention will be described in detail with reference to examples. Example 1 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%
Using a 0 mm cylindrical aluminum pipe, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a 3% by weight oxalic acid solution was used as an electrolyte solution, and a DC voltage of 28 V was applied between the aluminum pipe and the aluminum plate as a cylindrical cathode while maintaining the solution temperature at 28 ° C.
Anodizing was performed for minutes. The formed anodized aluminum oxide film had a thickness of 18 μm. The aluminum pipe on which the porous anodized aluminum oxide film was formed was ultrasonically cleaned in distilled water, dried at 50 ° C., and then placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. The aluminum pipe was maintained at 200 ° C., and 100% silane gas was supplied at 110 cm ³ per minute, hydrogen gas was supplied at 500 cm ³ per minute, and ammonia gas was supplied at 1500 minutes per minute.
cm ³ , and 1.0 Torr (133 P
After maintaining the internal pressure of a), a high frequency power of 13.56 MHz was supplied to generate glow discharge, and the output of the high frequency power supply was maintained at 350 W. Thus, an inorganic film made of silicon nitride having a thickness of about 2 μm was formed on the porous anodized aluminum film. When the surface hardness of the obtained silicon nitride film-sealed anodic aluminum oxide film was measured, the Vickers hardness was as high as 1550.
The relative permittivity was 4.5, and the chargeability was measured in an environment of a relative humidity of 15% at a temperature of 20 ° C. and a relative humidity of 75% at a temperature of 20 ° C. It was exactly the same and had high chargeability and high moisture resistance.

Example 2 A diameter of about 10 made of an Al-Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a 3% by weight oxalic acid solution was used as an electrolyte solution, and a DC voltage of 30 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the solution temperature at 33 ° C., and anodizing was performed for 70 minutes. Was done. The formed anodized aluminum oxide film had a thickness of 21 μm. In this way, the aluminum pipe on which the porous anodized aluminum film is formed is ultrasonically cleaned in distilled water,
After drying at 50 ° C., it was set in a vacuum chamber of a capacitively coupled plasma CVD apparatus. 200 pieces of this aluminum pipe
℃, 100% ethylene gas in the vacuum chamber at 3
00Cm ^3, hydrogen gas min 200 cm ³ flows and, after maintaining the vacuum chamber internal pressure of 0.5 Torr (66.7 Pa), was put the 13.56MHz high frequency electric power, causing a glow discharge, The output of the high frequency power supply was maintained at 900W. Thus, an inorganic film made of amorphous carbon having a thickness of about 2.5 μm was formed on the porous anodized aluminum oxide film. When the surface hardness of the obtained amorphous carbon film-sealed anodic aluminum oxide film was measured, the Vickers hardness was as high as 3300. In addition, it showed fading to hydrofluoric acid and caustic soda. Furthermore, the relative dielectric constant is 4.6, and the relative humidity is 15 at a temperature of 20 ° C.
%, And the chargeability was measured in an environment at a temperature of 20 ° C. and a relative humidity of 75%. As a result, the charge potential in both environments was completely the same, and the chargeability and the moisture resistance were high.

Example 3 A diameter of about 10 made of an Al-Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, while using a mixed solution of 2.5% by weight of tartaric acid and 0.08% by weight of ammonium tartrate as an electrolyte solution and maintaining the solution temperature at 45 ° C., a direct current of 80 V was applied to the aluminum pipe and the aluminum as the cylindrical cathode. Anodizing was performed for 50 minutes by applying a voltage between the plates. The formed anodized aluminum film had a thickness of 16 μm. The aluminum pipe on which the porous anodized aluminum film was formed was subjected to ultrasonic cleaning in distilled water,
After drying at ° C, it was set in a vacuum chamber of a capacitively coupled plasma CVD apparatus. 250 ° this aluminum pipe
C and maintain 100% silane gas in the vacuum chamber at 50 min / min.
cm ^3, methane gas per minute 1000 cm ³ flows and, after maintaining the vacuum chamber internal pressure of 0.7 Torr (93 Pa), was put the 13.56MHz high frequency electric power, causing glow discharge, high-frequency power supply output Was maintained at 600W. Thus, an inorganic film made of carbon silicon having a thickness of about 2.3 μm was formed on the porous anodized aluminum film. When the surface hardness of the obtained anodized aluminum oxide film sealed with a carbon silicon film was measured, the Vickers hardness was 1210, which was hard. Further, the relative permittivity is 4.7, and the chargeability is measured in an environment of a relative humidity of 15% at a temperature of 20 ° C and a relative humidity of 75% at a temperature of 20 ° C. It was exactly the same and had high chargeability and high moisture resistance.

Comparative Example 1 After forming a porous anodized aluminum oxide film in the same manner as in Example 1, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, γ-glycidoxypropyl trimethoxysilane was used as a silane coupling agent, and the aluminum pipe on which the anodized aluminum oxide film was formed was immersed in a 1% by weight aqueous solution at a bath temperature of 20 ° C. for 2 minutes. Then, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form an anodized aluminum oxide film sealed with epoxy resin. This has a relative dielectric constant of 7.0, a relative humidity of 15% at a temperature of 20 ° C., and a temperature of 2%.
When the chargeability was measured in an environment of 0 ° C. and a relative humidity of 75%, the charge potential was reduced by 13% in a high humidity environment, and the chargeability was low and the moisture resistance was low. Further, when the surface hardness was measured, the Vickers hardness was 480, which was soft.

Comparative Example 2 After forming a porous anodized aluminum oxide film in the same manner as in Example 2, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, γ-glycidoxypropyl trimethoxysilane was used as a silane coupling agent, and the aluminum pipe on which the anodized aluminum oxide film was formed was immersed in a 1% by weight aqueous solution at a bath temperature of 20 ° C. for 2 minutes. Then, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form an anodized aluminum oxide film sealed with epoxy resin. It has a relative dielectric constant of 6.7, a relative humidity of 15% at a temperature of 20 ° C., and a temperature of 2
When the chargeability was measured in an environment of 0 ° C. and a relative humidity of 75%, the charge potential was reduced by 10% in a high humidity environment, and the chargeability was low and the moisture resistance was low. Further, when the surface hardness was measured, the Vickers hardness was 490, which was soft.

Comparative Example 3 After a porous anodized aluminum oxide film was formed in the same manner as in Example 3, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, γ-glycidoxypropyl trimethoxysilane was used as a silane coupling agent, and the aluminum pipe on which the anodized aluminum oxide film was formed was immersed in a 1% by weight aqueous solution at a bath temperature of 20 ° C. for 2 minutes. Then, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form an anodized aluminum oxide film sealed with epoxy resin. It has a relative dielectric constant of 7.8, a relative humidity of 15% at a temperature of 20 ° C., and a temperature of 2
When the chargeability was measured in an environment of 0 ° C. and a relative humidity of 75%, the charge potential was reduced by 13% in a high humidity environment, and the chargeability was low and the moisture resistance was low. Further, when the surface hardness was measured, the Vickers hardness was 440, which was soft.

Example 4 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a DC voltage of 30 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the solution temperature at 28 ° C. using an oxalic acid solution of 3% by weight as an electrolyte solution, and anodizing was performed for 60 minutes. Was done. The formed anodized aluminum oxide film had a thickness of 20 μm. In this way, the aluminum pipe on which the porous anodized aluminum film is formed is ultrasonically cleaned in distilled water,
After drying at 50 ° C., it was set in a vacuum chamber of a capacitively coupled plasma CVD apparatus. 200 pieces of this aluminum pipe
° C and 100% silane gas in the vacuum chamber at a rate of 11 / min.
0 cm ^3, per minute 500 cm ³ of hydrogen gas, every minute 550 cm ³ flowing ammonia gas, 1.0Tor the vacuum chamber
After maintaining the internal pressure of r (133 Pa), 13.56 MH
The high frequency power of z was applied to generate glow discharge, and the output of the high frequency power was maintained at 350W. In this way, a film thickness of about 2 was formed on the porous anodized aluminum film.
An inorganic film made of silicon nitride having a thickness of μm was formed.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.2 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 25
It was 0V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1500, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 5 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, 2.5% by weight tartaric acid and 0.1% by weight as electrolyte solution.
Using a 08 wt% ammonium tartrate mixed solution, a DC voltage of 80 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the solution temperature at 40 ° C., and anodic oxidation was performed for 60 minutes. The formed anodized aluminum oxide film had a thickness of 18 μm. The aluminum pipe on which the porous anodized aluminum oxide film was formed was ultrasonically cleaned in distilled water, dried at 50 ° C., and then placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, in the same manner as in Example 4, an inorganic film made of silicon nitride was formed.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.3 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 21
7V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1500, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 6 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a DC voltage of 15 V was applied between the aluminum pipe and the aluminum plate serving as the cylindrical cathode while maintaining the solution temperature at 28 ° C. using a 10% by weight sulfuric acid solution as an electrolyte solution, and anodic oxidation was performed for 35 minutes. Was. The formed anodized aluminum film had a thickness of 22 μm. The aluminum pipe on which the porous anodized aluminum film was formed was subjected to ultrasonic cleaning in distilled water at 50 ° C.
, And placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, in the same manner as in Example 4, an inorganic film made of silicon nitride was formed.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.8 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 23
It was 8V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1500, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 7 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a DC voltage of 30 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the solution temperature at 33 ° C. using a 3 wt% oxalic acid solution as an electrolyte solution, and anodizing was performed for 60 minutes. Was done. The formed anodized aluminum oxide film had a thickness of 19 μm. In this way, the aluminum pipe on which the porous anodized aluminum film is formed is ultrasonically cleaned in distilled water,
After drying at 50 ° C., it was set in a vacuum chamber of a capacitively coupled plasma CVD apparatus. 200 pieces of this aluminum pipe
° C and 100% ethylene gas in the vacuum chamber at 2 min / min.
00Cm ^3, every minute 200 cm ³ flowing hydrogen gas, after maintaining the vacuum chamber internal pressure of 0.6 Torr (80 Pa), was put the 13.56MHz high frequency electric power, causing glow discharge, high-frequency power supply The power was maintained at 700W. Thus, an inorganic film made of amorphous carbon having a film thickness of about 1.2 μm was formed on the porous anodized aluminum oxide film.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.0 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 24
7V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 3400, which was very high. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 8 A diameter of about 100 made of an Al—Mg alloy having a purity of 99.9%.
mm cylindrical aluminum pipe as a support,
CFC cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, 2.5% by weight of tartaric acid and 0.0%
Using a mixed solution of 8% by weight of ammonium tartrate, a liquid temperature of 5%
While maintaining the temperature at 0 ° C., a DC voltage of 100 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode, and anodic oxidation was performed for 70 minutes. The formed anodized aluminum oxide film had a thickness of 20 μm. The aluminum pipe on which the porous anodized aluminum oxide film was formed was ultrasonically cleaned in distilled water, dried at 50 ° C., and then placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, an inorganic film made of amorphous carbon was formed in the same manner as in Example 7.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.2 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 25
It was 0V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 3400, which was very high. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 9 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a DC voltage of 20 V was applied between the aluminum pipe and the aluminum plate serving as the cylindrical cathode while maintaining the solution temperature at 30 ° C. using a 10% by weight sulfuric acid solution as an electrolyte solution, and anodic oxidation was performed for 50 minutes. Was. The formed anodized aluminum oxide film had a thickness of 18 μm. The aluminum pipe on which the porous anodized aluminum film was formed was subjected to ultrasonic cleaning in distilled water at 50 ° C.
, And placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, an inorganic film made of amorphous carbon was formed in the same manner as in Example 7.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 5.1 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 18
3V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 3400, which was very high. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 10 A diameter of about 10 made of an Al-Mg alloy having a purity of 99.99%.
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a DC voltage of 30 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the solution temperature at 28 ° C. using an oxalic acid solution of 3% by weight as an electrolyte solution, and anodizing was performed for 60 minutes. Was done. The formed anodized aluminum oxide film had a thickness of 20 μm. In this way, the aluminum pipe on which the porous anodized aluminum film is formed is ultrasonically cleaned in distilled water,
After drying at 50 ° C., it was set in a vacuum chamber of a capacitively coupled plasma CVD apparatus. 250 of this aluminum pipe
C. and 100% silane gas in the vacuum chamber at 50 min / min.
cm ^3, methane gas per minute 1000 cm ³ flows and, after maintaining the vacuum chamber internal pressure of 0.7 Torr (93 Pa), was put the 13.56MHz high frequency electric power, causing glow discharge, high-frequency power supply output Was maintained at 500W. Thus, an inorganic film made of silicon carbide having a thickness of about 2.2 μm was formed on the porous anodized aluminum film.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.3 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 24
2V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1250, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 11 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, an 8% by weight phosphoric acid solution was used as an electrolyte solution,
While maintaining the liquid temperature at 35 ° C., a DC voltage of 25 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode, and anodic oxidation was performed for 70 minutes. The formed anodized aluminum film had a thickness of 23 μm. The aluminum pipe on which the porous anodized aluminum film was formed was subjected to ultrasonic cleaning in distilled water,
After drying at ℃, it was placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, in the same manner as in Example 10, an inorganic film made of silicon carbide was formed.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 5.4 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 22
It was 1V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1250, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 12 A diameter of about 10 made of an Al—Mg alloy having a purity of 99.99%
Using a 0 mm cylindrical aluminum pipe as a support, chlorofluorocarbon cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, 2.5% by weight tartaric acid and 0.1% by weight as electrolyte solution.
Using a 08 wt% ammonium tartrate mixed solution, a DC voltage of 80 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode while maintaining the liquid temperature at 45 ° C., and anodic oxidation was performed for 60 minutes. The formed anodized aluminum oxide film had a thickness of 18 μm. The aluminum pipe on which the porous anodized aluminum oxide film was formed was ultrasonically cleaned in distilled water, dried at 50 ° C., and then placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. Thereafter, in the same manner as in Example 10, an inorganic film made of silicon carbide was formed.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.1 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 22
It was 8V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1250, which was very hard. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Example 13 A diameter of about 100 made of an Al—Mg alloy having a purity of 99.9%
mm cylindrical aluminum pipe as a support,
CFC cleaning and ultrasonic cleaning in distilled water were performed. Subsequently, a 3% by weight oxalic acid solution was used as an electrolyte solution,
While maintaining the liquid temperature at 28 ° C., a DC voltage of 30 V was applied between the aluminum pipe and the aluminum plate as the cylindrical cathode, and anodic oxidation was performed for 60 minutes. The formed anodized aluminum oxide film had a thickness of 20 μm. The aluminum pipe on which the porous anodized aluminum film was formed was subjected to ultrasonic cleaning in distilled water,
After drying at ℃, it was placed in a vacuum chamber of a capacitively coupled plasma CVD apparatus. The aluminum pipe was maintained at 200 ° C., and 100% silane gas was introduced into the vacuum chamber at a rate of 250 c / min.
m ³ , oxygen gas was introduced at a flow rate of 5 cm ³ per minute.
After maintaining the internal pressure of 5 Torr (66.5 Pa), 1
A high frequency power of 3.56 MHz was supplied to generate glow discharge, and the output of the high frequency power was maintained at 350 W. Thus, an inorganic film made of silicon oxide having a thickness of about 1.5 μm was formed on the porous anodized aluminum oxide film.

The obtained dielectric recording material for carrying an electrostatic latent image has a relative dielectric constant of 4.3 and a charge density of 46 nC / cm.
The charging potential (surface potential) when the surface charge of ² is given is 24
2V. Further, the decay of the charging potential with the lapse of time after the charging was as extremely small as 1% / 5 sec or less. Further, when the charging property was measured in an environment of a temperature of 20 ° C. and a relative humidity of 15% and an environment of a temperature of 20 ° C. and a relative humidity of 75%, the charging potential in both environments was exactly the same. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 1220, which was very high. The electrostatic latent image-carrying dielectric recording medium was placed in an image forming apparatus using pressure-transfer type ionography, and the images were evaluated. As a result, clear images without defects were obtained. In addition, no generation of scratches due to the pressure transfer drum or the metal cleaning blade was observed at all.

Comparative Example 4 After forming a porous anodized aluminum oxide film in the same manner as in Example 4, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, γ-glycidoxypropyl trimethoxysilane was used as a silane coupling agent, and the aluminum pipe on which the anodized aluminum oxide film was formed was immersed in a 1% by weight aqueous solution at a bath temperature of 20 ° C. for 2 minutes. Then, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form a dielectric recording member for carrying an electrostatic latent image. The specific dielectric constant was 7.0, and the charge potential (surface potential) when a surface charge of 46 nC / cm ² was given as a charge density was 148 V. Further, the decay of the charging potential with the passage of time after the charging was 6% / 5 sec. Further, at a temperature of 20 ° C., a relative humidity of 15%, and a temperature of 2
When the chargeability was measured at 0 ° C. in an environment with a relative humidity of 75%, the chargeability was found to be dependent on humidity, and the charge potential was reduced by 13% in a high humidity environment. When the surface hardness of the dielectric recording medium for holding an electrostatic latent image was measured, the Vickers hardness was 500.
Met. The electrostatic latent image-carrying dielectric recording medium was put into an image forming apparatus using pressure-transfer ionography, and the image was evaluated. As a result, it was found that some damage was caused by the pressure-transfer drum or metal cleaning blade. Was.

Comparative Example 5 After forming a porous anodized aluminum oxide film in the same manner as in Example 5, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, using γ-glycidoxypropyl trimethoxysilane as a silane coupling agent , an aluminum pipe having the above-described anodized aluminum oxide film formed on a 1% by weight aqueous solution at a bath temperature of 20 ° C. After immersion for 2 minutes and lifting, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form a dielectric recording member for carrying an electrostatic latent image. The specific dielectric constant was 6.7, and the charging potential (surface potential) when a surface charge of 46 nC / cm ² was given as a charge density was 140 V. Further, the decay of the charging potential with the lapse of time after charging was 5% / 5 sec. Further, at a temperature of 20 ° C., a relative humidity of 15%, and a temperature of 2
When the chargeability was measured at 0 ° C. in an environment with a relative humidity of 75%, the chargeability was found to be dependent on humidity, and the charge potential was reduced by 9% in a high humidity environment. The Vickers hardness was 530 when the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured. The electrostatic latent image-carrying dielectric recording medium was put into an image forming apparatus using pressure-transfer ionography, and the image was evaluated. As a result, it was found that some damage was caused by the pressure-transfer drum or metal cleaning blade. Was.

Comparative Example 6 After forming a porous anodized aluminum oxide film in the same manner as in Example 6, the formed porous anodized aluminum oxide film was subjected to a silane coupling agent treatment and an epoxy resin impregnation treatment. That is, using γ-glycidoxypropyl trimethoxysilane as a silane coupling agent , an aluminum pipe having the above-described anodized aluminum oxide film formed on a 1% by weight aqueous solution at a bath temperature of 20 ° C. After immersion for 2 minutes and lifting, it was heated at 100 ° C. for 15 minutes. Next, an epoxy resin paint (KANCOAT 51)
-L105B, manufactured by Kansai Paint Co., Ltd.) was applied by brush coating, and was cured by heating at 210 ° C. for 30 minutes. Next, the resin layer on the surface was removed with a knife, and the surface was polished with abrasive paper to form a dielectric recording member for carrying an electrostatic latent image. The specific dielectric constant was 7.5, and the charging potential (surface potential) when a surface charge of 46 nC / cm ² was given as a charge density was 152 V. Further, the decay of the charging potential with the passage of time after charging was 9% / 5 sec. Further, at a temperature of 20 ° C., a relative humidity of 15%, and a temperature of 2
When the chargeability was measured in an environment of 0 ° C. and a relative humidity of 75%, the chargeability was found to be dependent on humidity, and the charge potential was reduced by 15% in a high humidity environment. When the surface hardness of the electrostatic latent image-carrying dielectric recording medium was measured, the Vickers hardness was 180.
Met. The electrostatic latent image-carrying dielectric recording medium was put into an image forming apparatus using pressure-transfer ionography, and the image was evaluated. As a result, it was found that some damage was caused by the pressure-transfer drum or metal cleaning blade. Was.

[0051]

The dielectric recording medium for carrying an electrostatic latent image according to the present invention comprises:
As described above, a silicon nitride film and a silicon carbide film are formed on the surface of the porous anodized aluminum film by the plasma CVD method.
Film, silicon oxide film, diamond-like carbon film and amorphous
Since an inorganic film made of at least one selected from carbon films is provided and the holes are kept in a state of vacuum or air, the dielectric constant is higher than that of a conventional one. Therefore, the chargeability is good, the potential decay with time after charging is small, and a high charge potential can be maintained. Furthermore, the above-mentioned inorganic film formed by the plasma CVD method is dense and has extremely high surface hardness.
And good moisture resistance. In addition, it is excellent in stability and reproducibility of electric characteristics such as chargeability, and has high structure reliability, and particularly has good stability against thermal stress.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a dielectric recording medium for carrying an electrostatic latent image of the present invention.

FIG. 2 is a capacitor circuit diagram for explaining the operation of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Support, 2 ... Porous anodized aluminum film, 3
... inorganic film, 4 ... barrier layer portion, 5 ... porous layer portion, 6 ... pores.

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-111259 (JP, A) JP-A-57-130038 (JP, A) JP-A-1-243066 (JP, A) JP-A 61-111 200547 (JP, A) JP-A-61-262744 (JP, A) JP-A-63-272756 (JP, A)

Claims (3)

(57) [Claims] 1. A support, a porous anodized aluminum oxide film provided on the support, and a silicon nitride film, a silicon carbide film, and a silicon oxide film provided on the porous anodized aluminum film And an inorganic film made of at least one selected from a diamond-like carbon film and an amorphous carbon film, wherein the pores of the porous anodized aluminum oxide film have air or vacuum confined therein . A dielectric recording member for carrying an electrostatic image, wherein an open end is closed by an inorganic film. 2. The method according to claim 1, wherein the porous anodized aluminum film is a film formed using an electrolyte solution comprising at least one selected from oxalic acid, tartaric acid, sulfuric acid and phosphoric acid. Item 2. The dielectric recording material for carrying an electrostatic image according to Item 1 . 3. The dielectric recording medium for carrying an electrostatic image according to claim 1 , wherein the inorganic film is formed by using a plasma CVD method.